JP2018130015A - 低誘導性ハーフブリッジ装置 - Google Patents
低誘導性ハーフブリッジ装置 Download PDFInfo
- Publication number
- JP2018130015A JP2018130015A JP2018020780A JP2018020780A JP2018130015A JP 2018130015 A JP2018130015 A JP 2018130015A JP 2018020780 A JP2018020780 A JP 2018020780A JP 2018020780 A JP2018020780 A JP 2018020780A JP 2018130015 A JP2018130015 A JP 2018130015A
- Authority
- JP
- Japan
- Prior art keywords
- circuit board
- commutation
- bridge device
- elements
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000001939 inductive effect Effects 0.000 title description 2
- 239000003990 capacitor Substances 0.000 claims abstract description 43
- 239000004020 conductor Substances 0.000 claims abstract description 11
- 229910052802 copper Inorganic materials 0.000 claims description 11
- 239000010949 copper Substances 0.000 claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- 230000017525 heat dissipation Effects 0.000 description 14
- 239000000758 substrate Substances 0.000 description 8
- 239000012212 insulator Substances 0.000 description 7
- 230000003071 parasitic effect Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
- 230000009467 reduction Effects 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000036039 immunity Effects 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 229910018540 Si C Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012432 intermediate storage Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0216—Reduction of cross-talk, noise or electromagnetic interference
- H05K1/0228—Compensation of cross-talk by a mutually correlated lay-out of printed circuit traces, e.g. for compensation of cross-talk in mounted connectors
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0263—High current adaptations, e.g. printed high current conductors or using auxiliary non-printed means; Fine and coarse circuit patterns on one circuit board
- H05K1/0265—High current adaptations, e.g. printed high current conductors or using auxiliary non-printed means; Fine and coarse circuit patterns on one circuit board characterized by the lay-out of or details of the printed conductors, e.g. reinforced conductors, redundant conductors, conductors having different cross-sections
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/09218—Conductive traces
- H05K2201/09236—Parallel layout
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/09654—Shape and layout details of conductors covering at least two types of conductors provided for in H05K2201/09218 - H05K2201/095
- H05K2201/09672—Superposed layout, i.e. in different planes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10015—Non-printed capacitor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Inverter Devices (AREA)
- Power Conversion In General (AREA)
- Structure Of Printed Boards (AREA)
Abstract
Description
8 回路基板(プリント基板)
11 第1導電路層
12 第2導電路層
13 第3導電路層
14 第4導電路層
15 主要部分
16 長手方向
17 ドライバ部分
18 転流電流方向
19 ドライバ電流方向
20 空きエリア
21 絶縁体
AK1,AK2 駆動回路
C1,C11,C12 中間回路コンデンサ素子
C2,C3 コンデンサ
KK 転流回路
KK1〜KK4 転流回路
T1,T2 スイッチ素子
TR1,TR2 ドライバ
Claims (10)
- 2つのスイッチ素子(T1,T2)と、コンデンサ素子(C1,C11,C12)と、回路基板(8)とを有し、前記回路基板(8)により前記スイッチ素子(T1,T2)と前記コンデンサ素子(C1,C11,C12)とが接続されてハーフブリッジを構成している、コンバータ用のハーフブリッジ装置であって、
前記回路基板(8)が、少なくとも4つの導体路層(11,12,13,14)を有し、
転流事象中に前記回路基板(8)内に少なくとも2つの反対向きの双極子が生じるように、前記スイッチ素子(T1,T2)と前記コンデンサ素子(C1,C11,C12)とが前記回路基板(8)に配置されて前記導体路層(11,12,13,14)により接続されている、ハーフブリッジ装置。 - 前記コンデンサ素子(C1,C11,C12)として、前記回路基板(8)に対称的に配置された2つのコンデンサ素子(C11,C12)を有する、請求項1に記載のハーフブリッジ装置。
- 前記スイッチ素子(T1,T2)と前記コンデンサ素子(C11,C12)とが、前記回路基板(8)の両面を使用して配置されている、請求項2に記載のハーフブリッジ装置。
- 転流事象中に2つの反対向きの双極子(δ+,δ−)が2つの異なる空間方向において生じるように、前記スイッチ素子(T1,T2)と前記コンデンサ素子(C1,C11,C12)とが配置されて接続されている、請求項1〜3のいずれか1項に記載のハーフブリッジ装置。
- 前記回路基板(8)が4つの前記導体路層(11,12,13,14)を有し、転流事象中有に少なくとも4つの並列の転流回路(KK1,KK2,KK3,KK4)が生じる、請求項1〜4のいずれか1項に記載のハーフブリッジ装置。
- 前記転流回路(KK1,KK2,KK3,KK4)が互いに対称的に配置される、請求項5に記載のハーフブリッジ装置。
- ドライバ素子(TR1,TR2)を有し、該ドライバ素子(TR1,TR2)の主電流のドライバ電流方向(19)が転流事象中の主電流の転流電流方向(18)に対し交差するように、前記ドライバ素子(TR1,TR2)が配置されている、請求項1〜6のいずれか1項に記載のハーフブリッジ装置。
- ハーフブリッジの中間タップが可能な限り小さく、好ましくは前記回路基板(8)の面積の5%よりも小さく、形成されている、請求項1〜7のいずれか1項に記載のハーフブリッジ装置。
- 前記導体路層(11,12,13,14)の銅充填率が最大限に高い、請求項1〜8のいずれか1項に記載のハーフブリッジ装置。
- 請求項1〜9のいずれか1項に記載のハーフブリッジ装置を有するコンバータ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP17155207.8 | 2017-02-08 | ||
EP17155207.8A EP3361836B1 (de) | 2017-02-08 | 2017-02-08 | Niederinduktive halbbrückenanordnung |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018130015A true JP2018130015A (ja) | 2018-08-16 |
JP6709810B2 JP6709810B2 (ja) | 2020-06-17 |
Family
ID=57995123
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018020780A Active JP6709810B2 (ja) | 2017-02-08 | 2018-02-08 | 低誘導性ハーフブリッジ装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10256718B2 (ja) |
EP (1) | EP3361836B1 (ja) |
JP (1) | JP6709810B2 (ja) |
CN (1) | CN108400716B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20220022154A (ko) * | 2020-08-18 | 2022-02-25 | 한국전자기술연구원 | Pcb 일체형 고속 스위칭 전력변환 장치 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3876409A1 (en) | 2020-03-05 | 2021-09-08 | ABB Schweiz AG | Flying capacitor switching cell-system |
US10903834B1 (en) * | 2020-04-08 | 2021-01-26 | Bae Systems Controls Inc. | Power electronic device with paralleled transistors |
US11439016B2 (en) | 2020-10-27 | 2022-09-06 | Delta Electronics, Inc. | Power converter module |
US11252820B1 (en) | 2020-10-27 | 2022-02-15 | Delta Electronics, Inc. | Power converter module |
DE102020216111A1 (de) | 2020-12-17 | 2022-06-23 | Robert Bosch Gesellschaft mit beschränkter Haftung | Inverter |
DE102021106599A1 (de) | 2021-03-18 | 2022-09-22 | Man Truck & Bus Se | Flüssigkeitsgekühlter Wechselrichter zur Ansteuerung eines elektrischen Antriebsmotors eines Fahrzeugs |
EP4131759A1 (en) * | 2021-08-03 | 2023-02-08 | Watt & Well | Highly integrated mosfet half-bridge power module for power converters |
EP4297087A1 (en) * | 2022-06-24 | 2023-12-27 | Airbus S.A.S. | Power electronic module with parallely connected power electronic devices |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2007113979A1 (ja) * | 2006-03-30 | 2007-10-11 | Mitsubishi Electric Corporation | 電力変換装置およびその組み立て方法 |
JP2014054103A (ja) * | 2012-09-07 | 2014-03-20 | Toyota Motor Corp | パワーモジュール構造 |
JP2014087252A (ja) * | 2012-10-19 | 2014-05-12 | Linear Technol Corp | スイッチングレギュレータにおける磁場キャンセル |
JP2015226438A (ja) * | 2014-05-29 | 2015-12-14 | 株式会社ソニー・コンピュータエンタテインメント | スイッチングコンバータおよびそれを用いた電子機器 |
JP2016503963A (ja) * | 2012-12-31 | 2016-02-08 | エフィシエント パワー コンヴァーション コーポレーション | 多層化された半導体素子のための寄生インダクタンス削減回路基板レイアウト設計 |
Family Cites Families (10)
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-
2017
- 2017-02-08 EP EP17155207.8A patent/EP3361836B1/de active Active
-
2018
- 2018-01-04 CN CN201810007540.0A patent/CN108400716B/zh active Active
- 2018-02-07 US US15/891,083 patent/US10256718B2/en active Active
- 2018-02-08 JP JP2018020780A patent/JP6709810B2/ja active Active
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WO2007113979A1 (ja) * | 2006-03-30 | 2007-10-11 | Mitsubishi Electric Corporation | 電力変換装置およびその組み立て方法 |
JP2014054103A (ja) * | 2012-09-07 | 2014-03-20 | Toyota Motor Corp | パワーモジュール構造 |
JP2014087252A (ja) * | 2012-10-19 | 2014-05-12 | Linear Technol Corp | スイッチングレギュレータにおける磁場キャンセル |
JP2016503963A (ja) * | 2012-12-31 | 2016-02-08 | エフィシエント パワー コンヴァーション コーポレーション | 多層化された半導体素子のための寄生インダクタンス削減回路基板レイアウト設計 |
JP2015226438A (ja) * | 2014-05-29 | 2015-12-14 | 株式会社ソニー・コンピュータエンタテインメント | スイッチングコンバータおよびそれを用いた電子機器 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20220022154A (ko) * | 2020-08-18 | 2022-02-25 | 한국전자기술연구원 | Pcb 일체형 고속 스위칭 전력변환 장치 |
KR102413991B1 (ko) * | 2020-08-18 | 2022-06-29 | 한국전자기술연구원 | Pcb 일체형 고속 스위칭 전력변환 장치 |
Also Published As
Publication number | Publication date |
---|---|
EP3361836B1 (de) | 2020-06-17 |
JP6709810B2 (ja) | 2020-06-17 |
US10256718B2 (en) | 2019-04-09 |
EP3361836A1 (de) | 2018-08-15 |
US20180226886A1 (en) | 2018-08-09 |
CN108400716A (zh) | 2018-08-14 |
CN108400716B (zh) | 2021-04-13 |
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