JP2018098304A - SiC膜の成膜方法 - Google Patents
SiC膜の成膜方法 Download PDFInfo
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- JP2018098304A JP2018098304A JP2016239716A JP2016239716A JP2018098304A JP 2018098304 A JP2018098304 A JP 2018098304A JP 2016239716 A JP2016239716 A JP 2016239716A JP 2016239716 A JP2016239716 A JP 2016239716A JP 2018098304 A JP2018098304 A JP 2018098304A
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- 238000000034 method Methods 0.000 title claims abstract description 54
- 239000002243 precursor Substances 0.000 claims abstract description 65
- GQIUQDDJKHLHTB-UHFFFAOYSA-N trichloro(ethenyl)silane Chemical compound Cl[Si](Cl)(Cl)C=C GQIUQDDJKHLHTB-UHFFFAOYSA-N 0.000 claims abstract description 35
- 239000005050 vinyl trichlorosilane Substances 0.000 claims abstract description 35
- 230000004913 activation Effects 0.000 claims abstract description 19
- 230000003213 activating effect Effects 0.000 claims abstract description 11
- 239000007789 gas Substances 0.000 claims description 101
- 125000004429 atom Chemical group 0.000 claims description 23
- 125000004432 carbon atom Chemical group C* 0.000 claims description 17
- 229910052794 bromium Inorganic materials 0.000 claims description 14
- 229910052801 chlorine Inorganic materials 0.000 claims description 14
- 229910052740 iodine Inorganic materials 0.000 claims description 14
- 229910052739 hydrogen Inorganic materials 0.000 claims description 13
- 229910052731 fluorine Inorganic materials 0.000 claims description 10
- 238000002230 thermal chemical vapour deposition Methods 0.000 claims description 6
- 125000000962 organic group Chemical group 0.000 claims description 5
- 239000002994 raw material Substances 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical compound [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 126
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 140
- 229910010271 silicon carbide Inorganic materials 0.000 description 123
- 238000005229 chemical vapour deposition Methods 0.000 description 15
- 238000000231 atomic layer deposition Methods 0.000 description 14
- 230000007246 mechanism Effects 0.000 description 14
- 230000008569 process Effects 0.000 description 14
- 230000007704 transition Effects 0.000 description 14
- 239000000460 chlorine Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 12
- 238000006557 surface reaction Methods 0.000 description 12
- UBHZUDXTHNMNLD-UHFFFAOYSA-N dimethylsilane Chemical compound C[SiH2]C UBHZUDXTHNMNLD-UHFFFAOYSA-N 0.000 description 11
- 238000004088 simulation Methods 0.000 description 11
- 125000001309 chloro group Chemical group Cl* 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 8
- 238000010926 purge Methods 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 239000010410 layer Substances 0.000 description 7
- 239000002356 single layer Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 150000002894 organic compounds Chemical class 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- UCXUKTLCVSGCNR-UHFFFAOYSA-N diethylsilane Chemical compound CC[SiH2]CC UCXUKTLCVSGCNR-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- URHCLQINLKLDSJ-UHFFFAOYSA-N trichloro(ethynyl)silane Chemical compound Cl[Si](Cl)(Cl)C#C URHCLQINLKLDSJ-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000005046 Chlorosilane Substances 0.000 description 2
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- -1 polysiloxane Polymers 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Classifications
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
- H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/45534—Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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- H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
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- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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Abstract
Description
図1は、本発明の第1の実施形態にかかる成膜装置を概略的に示した縦断面図である。図2は、図1の成膜装置が成膜対象とする基板の一例を示す図である。
図1の成膜装置1は、被処理体としての基板WにSiC膜をALD法により形成し、より具体的には、プラズマエンハンスドALD(PEALD)によりSiC膜を基板Wに形成する。基板Wは、図2(A)に示すように、半導体基板F1の上にタングステン膜やシリコン酸化膜(SiO2膜)等の下層膜F2が形成され、さらにその上に図2(B)に示すように、SiCの単層膜F3が形成された基板である。成膜装置1は、上記SiCの単層膜F3上に成膜を行い、これにより図2(C)に示すように、所定の厚さのSiC膜F4を下層膜F2上に形成するものである。
基板Wが載置台11に保持されると、排気機構70により処理容器10内が排気され気密に保持され、それと共に、ガスの供給及び基板Wの加熱が開始される(ステップS2)。
また、各電気ヒータ20、34等により、上部電極30、載置台11上の基板Wが、例えば400℃に加熱及び維持される。
新しいSiCの単層膜の形成後、図4に示すように、N2ガスの供給を維持したまま、原料ガスの供給を停止し、N2ガスにより処理容器10内をパージする(ステップS6)。
基板Wへの成膜処理が終了すると、処理容器10から基板Wが搬出される。そして、処理容器10内に新たな基板Wが搬入され、この一連の基板Wへの成膜処理が繰り返し行われる。
本発明者らは、SiC膜の成膜が可能であるか検討するため、SiC基板の表面と上述の前駆体が結合するのに必要なエネルギーをシミュレーションにより計算した。このシミュレーションを含む以下のSiC基板の表面反応に係るシミュレーションでは、SiC基板の表面を図5に示すようにC(炭素)原子に結合されたSi(シリコン)原子がHで終端された構造(CSi−H構造)で代表させた。
SiC基板を表面処理しない場合すなわち活性化させない場合において、図示するように、前駆体として上記通常の直鎖状のSiC系分子であるジメチルシラン((CH3)2SiH2)を用い、該前駆体をSiC基板表面に結合/吸着させるとき、遷移状態を経る必要がある。この原系から該遷移状態に至る活性化エネルギーすなわちこの前駆体をSiC基板表面に結合させるためのエネルギーとして3.35eVが必要である。しかし、このエネルギーは、400℃の基板温度で表面反応を得るための閾値、すなわち400℃の基板温度でALD法によりSiC膜を成膜するための閾値である0.75eVより非常に高い。
前駆体として、直鎖状の不飽和結合を含むSiC系分子または多員環構造を含むSiC系分子を用いる場合も同様である。
したがって、上述の前駆体を用いてSiC膜を成膜するにはSiC基板表面を活性化させる必要があると考えられる。
図7は、SiC表面を活性化させるのに必要なエネルギーを示す図である。
図示するように、Hラジカルのプラズマを用いてSiC基板表面を活性化させるには、具体的には、SiC基板表面にSiのダングリングボンドを形成するには、遷移状態を経る必要がある。この遷移状態に至る活性化エネルギーすなわちHラジカルプラズマによりSiC基板表面を活性化させるのに必要なエネルギーは0.03eVである。このエネルギーは、400℃の基板温度で表面反応を得るための閾値である0.75eVより極めて低い。
したがって、Hラジカルのプラズマを用いて400℃のSiC基板表面を活性化させることができる。
前駆体として上記通常の直鎖状のSiC系分子であるジメチルシランを用い、活性化されたSiC基板表面に上記前駆体を結合/吸着させるとき、遷移状態を経る必要がある。この原系から該遷移状態に至る活性化エネルギーすなわちこの前駆体をSiC基板表面に結合させるためのエネルギーとして1.13eVが必要である。しかし、このエネルギーは、400℃の基板温度でALD法によりSiC膜を成膜するための閾値である0.75eVより高い。
したがって、ジメチルシランを用いてSiC膜を成膜するのは難しいものと考えられる。
上述のようにジメチルラジカルを得るには図の遷移状態を経る必要がある。この遷移状態に至る活性化エネルギーすなわちSiC基板との表面反応によりジメチルシランラジカルを得るのに必要なエネルギーは0.32eVである。このエネルギーは、400℃の基板温度で表面反応を得るための閾値である0.75eVより低い。
したがって、400℃のSiC基板との表面反応によりジメチルシランを活性化しジメチルシランラジカルを得ることができる。
シミュレーション結果によれば、図示するように、400℃の基板温度があれば、活性化されたSiC基板表面にジメチルシランラジカルを結合させることができる。
しかし、この方法は、活性サイトを2つ消費するため、効率的な成膜方法とは言えない。
前駆体として、Si原子とC原子を含む4員環構造を有するSiC系分子であるC3H6SiCl2を用い、活性化されたSiC基板表面に上記前駆体を結合/吸着させるとき、遷移状態を経る必要がある。この原系から該遷移状態に至る活性化エネルギーすなわちこの前駆体をSiC基板表面に結合させるためのエネルギーとして1.05eVが必要である。しかし、このエネルギーは、400℃の基板温度でALD法によりSiC膜を成膜するための閾値である0.75eVより高い。
したがって、C3H6SiCl2を用いてSiC膜を成膜するのは難しいものと考えられる。
3員環以上の多員環構造を有するSiC系分子であれば、上述の点は、4員環構造を有するSiC系分子と同様である。
シミュレーション結果によれば、図示するように、400℃の基板温度があれば、遷移状態を経ずに、活性化されたSiC基板表面に前駆体としてのビニルトリクロロシラン(C2H3SiCl3)を結合させることができる。
したがって、ビニルトリクロロシランを用いれば、400℃という低温のSiC基板の活性化された表面上にSiC膜を成膜することができる。
そうすると、低い障壁エネルギー0.33eVで表面再構成が起こり、上記ラジカルサイトがSiC基板表面のSi原子のダングリングボンドに置き換えられる。言い換えると、ビニルトリクロロシランが結合したSi原子と隣接する、水素終端されたSi原子であって、ビニルトリクロロシランが結合しておらず活性化されていない原子があれば、このSi原子はビニルトリクロロシランの結合により形成されたラジカルサイトにより活性化される。このラジカルサイトにより活性化されたSi原子にビニルトリクロロシランが結合していくので、ビニルトリクロロシランの結合が連鎖的に起こる。この連鎖反応は、ラジカル同士が出合い再結合することで停止する。これにより、SiC基板表面全体にビニルトリクロロシランの単層膜が形成される。
つまり、ビニルトリクロロシランを前駆体として用いることで、活性化されたSiC基板表面と前駆体とが連鎖反応で結合するため、SiC膜を速く成膜することができる。
なお、上記表面再構成は短時間で起こるため、吸着されたビニルトリクロロシランに、更にビニルトリクロロシランが吸着する可能性、すなわち多層吸着が起きる可能性は極めて低い。
該必要なエネルギーを計算するシミュレーションでは、ビニルトリクロロシランを用いて成膜されたSiC膜の表面を、図示するように、C原子に結合されたSi原子がCl(塩素)原子で終端された構造(CSi−Cl構造)で代表させた。
したがって、前駆体としてビニルトリクロロシランを用いた場合、自己制御性を保つことができる。
図示するように、Hラジカルのプラズマを用いてCSi−Cl構造表面を活性化させるには、具体的には、Si原子とSi原子を表面終端するCl原子との結合を切断するには、遷移状態を経る必要がある。この遷移状態に至る活性化エネルギーすなわちHラジカルプラズマによりCSi−Cl構造表面を活性化させるのに必要なエネルギーは0.59eVである。このエネルギーは、400℃の基板温度で表面反応を得るための閾値である0.75eVより低い。
したがって、400℃の基板温度においてHラジカルのプラズマを用いてCSi−Cl構造表面を活性化させることができる。よって、基板表面をHラジカルプラズマで活性化させ前駆体としてビニルトリクロロシランを用いて成膜することによって、必要に応じてSiC膜を多層化し所望の膜厚にすることができる。
例えば、GeC膜のALD前駆体には、一般式RGeX1 3またはRGeHClX2(式中、Rは直鎖状の不飽和結合を有する有機基、X1はH、F、Cl、Br及びIから選択され、X2はCl、Br及びIから選択される)で表されるものが用いられる。
GeSiC膜のALD前駆体には、例えば、一般式RSiX1 2GeX2 3、RGeX1 2SiX2 3(式中、Rは直鎖状の不飽和結合を有する有機基、X1及びX2はH、F、Cl、Br及びIから選択される)で表されるものが用いられる。
図15は、本発明の第2の実施形態にかかる成膜装置を概略的に示した縦断面図である。
図の成膜装置2は、基板WにSiC膜を熱CVD法により形成する。
基板Wが載置台11に保持されると、排気機構70により処理容器10内が排気され気密に保持される。それと共に処理ガス供給源51から、C2H4SiH2ガス、N2ガスがそれぞれ所定の流量で処理容器10内に供給される。この際、C2H4SiH2ガスの流量は概ね1〜100sccm、N2ガスの流量は概ね1〜10000sccmとなるように各流量調整機構57が制御される。また、処理容器10内の圧力が、例えば13〜1330Paとなるように、調節弁72の開度が制御される。
基板Wへの成膜処理が終了すると、処理容器10から基板Wが搬出される。そして、処理容器10内に新たな基板Wが搬入され、この一連の基板Wへの成膜処理が繰り返し行われる。
したがって、ジエチルシランまたはジメチルシランを前駆体として用いてCVD法によりSiC膜を成膜することは難しい。
したがって、ビニルトリクロロシラン、CH2=CH−CH=CH−SiCl3またはエチニルトリクロロシランを前駆体として用いてCVD法によりSiC膜を成膜することは難しい。
図16(B)の4員環構造の分子(C3H6SiCl2)において、C原子間の結合またはSi原子とC原子との間の結合を切断するには、それぞれ2.41eVと2.56eVのエネルギーが必要である。
図16(C)の3員環構造の分子(C2H4SiCl2)において、C原子間の結合またはSi原子とC原子との間の結合を切断するには、それぞれ1.46eVと1.49eVのエネルギーが必要である。
また、400℃の基板温度でCVD法によりSiC膜を成膜するための閾値が1.74eVである。
例えば、GeSiC膜のCVD前駆体には、C原子とGe原子により形成された3員環を有する有機化合物、例えば、一般式C2H4SiX2またはCH2Si2X4(式中、XはH、F、Cl、Br及びIから選択される)で表されるものが用いられる。
GeSiC膜のCVD前駆体には、C原子とSi原子またはGe原子とにより形成された3員環を有する有機化合物であって、一般式C2H4SiX1 2GeX2 2(式中、X1及びX2はそれぞれH、F、Cl、Br及びIから選択される)で表されるものが用いられる。
10…処理容器
11…載置台
20…電気ヒータ
30…上部電極
30a…ガス供給孔
50…ガス供給管
51…処理ガス供給源
52…原料ガス供給部
53…活性化ガス供給部
60…高周波電源
Claims (5)
- 被処理体にSiC膜をALD法により形成する成膜方法であって、
活性化ガスをプラズマ化した活性化ガスプラズマにより、前記被処理体の表面を活性化させる活性化工程と、
表面が活性化された前記被処理体に、一般式RSiX1 3またはRSiHClX2(式中、Rは不飽和結合を有する有機基、X1はH、F、Cl、Br及びIから選択され、X2はCl、Br及びIから選択される)で表される前駆体を含む原料ガスを供給しSiC膜を形成する膜形成工程と、を含むことを特徴とする成膜方法。 - 前記前駆体は、ビニルトリクロロシランまたはビニルシランであることを特徴とする請求項1に記載の成膜方法。
- 前記活性化ガスは、水素ガスを含むことを特徴とする請求項1または2に記載の成膜方法。
- 被処理体にSiC膜を熱CVDにより形成する成膜方法であって、
前記被処理体に、C原子とSi原子により形成された3員環を有する前駆体を含む原料ガスを供給しSiC膜を形成する膜形成工程、を含むことを特徴とする成膜方法。 - 前記前駆体は、一般式C2H4SiX2またはCH2Si2X4(式中、XはH、F、Cl、Br及びIから選択される)で表されることを特徴とする請求項4に記載の成膜方法。
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