JP2018090901A - 基板処理装置、基板の処理方法 - Google Patents
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- 239000000758 substrate Substances 0.000 title claims abstract description 64
- 238000000034 method Methods 0.000 title abstract description 7
- 239000007789 gas Substances 0.000 claims description 236
- 238000003672 processing method Methods 0.000 claims description 19
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 4
- 229910000077 silane Inorganic materials 0.000 claims description 4
- 239000000203 mixture Substances 0.000 abstract 2
- 238000004140 cleaning Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Abstract
Description
図1は、実施の形態に係る基板処理装置の断面図である。この基板処理装置はチャンバ(Reactor Chamber)12を備えている。チャンバ12の中にはステージ16が設けられている。ステージ16は例えばヒータが内蔵されたサセプタである。ステージ16は滑動シャフト18に支持されている。ステージ16は接地されている。このステージ16の上方にステージ16と対向するシャワーヘッド14が設けられている。シャワーヘッド14には複数のスリット14aが形成されている。シャワーヘッド14は複数のスリット14aにつながる拡散空間14bを提供している。ステージ16とシャワーヘッド14で平行平板構造が形成されている。
((max-min)/ave)×50
で定義される。したがってuniformityは小さい値となることが好ましい。図5から、第1ガスの流量を変化させることで、uniformityが変化することが分かる。したがって、第1ガスの流量として最適な流量を選択することでuniformityをコントロールできる。図5からは、第1ガスの流量として20[slpm]を選択することで最小のuniformityを得られることが分かる。
Claims (11)
- チャンバと、
前記チャンバの中に設けられたステージと、
複数のスリットが形成され、前記ステージに対向するシャワーヘッドと、
前記複数のスリットを経由して前記ステージと前記シャワーヘッドの間に、第1ガスを供給する第1ガス供給部と、
前記ステージの下方に希ガスではない第2ガスを供給する第2ガス供給部と、を備え、
前記第2ガスは、前記第1ガスが複数種類のガスの混合ガスである場合には前記混合ガスを構成するガスの1つと同じガスであり、前記第1ガスが単一のガスである場合には前記第1ガスと同じガスであることを特徴とする基板処理装置。 - 前記第2ガスはO2、N2、TEOS又はシランであることを特徴とする請求項1に記載の基板処理装置。
- 前記第1ガスはO2とTEOSの混合ガスであり、前記第2ガスはO2であることを特徴とする請求項1に記載の基板処理装置。
- 平面視で前記ステージを囲む形状を有し、前記第1ガスと前記第2ガスを前記チャンバの外へ排気する排気ダクトを備えたことを特徴とする請求項1〜3のいずれか1項に記載の基板処理装置。
- シャワーヘッドの複数のスリットを介して前記シャワーヘッドとチャンバの中のステージとの間に第1ガスを供給しつつ、前記ステージの下方に希ガスではない第2ガスを供給した状態で、前記シャワーヘッドに高周波を印加することで、前記ステージの上の基板にプラズマ処理を施す処理工程を備え、
前記第2ガスは、前記第1ガスが複数種類のガスの混合ガスである場合には前記混合ガスを構成するガスの1つと同じガスであり、前記第1ガスが単一のガスである場合には前記第1ガスと同じガスであることを特徴とする基板の処理方法。 - 前記第2ガスはO2、N2、TEOS又はシランであることを特徴とする請求項5に記載の基板の処理方法。
- 前記第1ガスはO2とTEOSの混合ガスであり、前記第2ガスはO2であることを特徴とする請求項5に記載の基板の処理方法。
- 前記第1ガスと前記第2ガスは、平面視で前記ステージを囲む形状を有する排気ダクトをとおって前記チャンバの外へ排気され、
前記第1ガスと前記第2ガスの割合は10:1〜50:1であることを特徴とする請求項5〜7のいずれか1項に記載の基板の処理方法。 - 前記処理工程では前記第2ガスの流量を経時変化させることを特徴とする請求項5〜8のいずれか1項に記載の基板の処理方法。
- 前記処理工程では前記第1ガスの流量を経時変化させることを特徴とする請求項5〜8のいずれか1項に記載の基板の処理方法。
- 前記処理工程では、前記基板の中央部で前記中央部を囲む環状部よりも膜厚が大きくなる成膜又は、前記中央部で前記環状部よりも膜厚が小さくなる成膜を施すことを特徴とする請求項5〜10のいずれか1項に記載の基板の処理方法。
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Application Number | Priority Date | Filing Date | Title |
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US15/368,104 | 2016-12-02 | ||
US15/368,104 US11761084B2 (en) | 2016-12-02 | 2016-12-02 | Substrate processing apparatus and method of processing substrate |
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JP2018090901A true JP2018090901A (ja) | 2018-06-14 |
JP7023665B2 JP7023665B2 (ja) | 2022-02-22 |
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JP (1) | JP7023665B2 (ja) |
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JP2015002349A (ja) * | 2013-06-12 | 2015-01-05 | エーエスエム アイピー ホールディング ビー.ブイ. | プラズマアシストプロセスにより処理された基板の面内均一性を制御する方法 |
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CN108155113B (zh) | 2023-03-21 |
KR20180063819A (ko) | 2018-06-12 |
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