JP2018032724A - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
- Publication number
- JP2018032724A JP2018032724A JP2016163669A JP2016163669A JP2018032724A JP 2018032724 A JP2018032724 A JP 2018032724A JP 2016163669 A JP2016163669 A JP 2016163669A JP 2016163669 A JP2016163669 A JP 2016163669A JP 2018032724 A JP2018032724 A JP 2018032724A
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- 238000012545 processing Methods 0.000 title claims abstract description 330
- 239000000758 substrate Substances 0.000 title claims abstract description 69
- 239000012530 fluid Substances 0.000 claims abstract description 54
- 230000004308 accommodation Effects 0.000 claims description 6
- 238000000034 method Methods 0.000 abstract description 19
- 230000008569 process Effects 0.000 abstract description 17
- 239000007789 gas Substances 0.000 description 45
- 239000007788 liquid Substances 0.000 description 45
- 230000007246 mechanism Effects 0.000 description 31
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 24
- 238000012546 transfer Methods 0.000 description 16
- 238000010586 diagram Methods 0.000 description 14
- 239000002253 acid Substances 0.000 description 11
- 238000003860 storage Methods 0.000 description 8
- 238000001035 drying Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 238000011084 recovery Methods 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 238000012423 maintenance Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 230000001174 ascending effect Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 238000010306 acid treatment Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
16 処理ユニット
104 循環ライン
104H 水平配管
112 分岐ライン
400 フレーム構造体
401 柱部
402 梁部
402−1 第1梁部
402−2 第2梁部
Claims (6)
- 水平方向に並べて配置され、処理流体を用いて基板を処理する複数の処理部と、
前記複数の処理部の下方に水平に配置された水平配管、および、該水平配管から分岐して前記処理部のそれぞれへ接続される分岐管を有する処理流体供給ラインと、
複数の柱部および複数の梁部を有し、該柱部および該梁部によって形成される収容空間に前記複数の処理部および前記処理流体供給ラインを収容するフレーム構造体と
を備え、
前記梁部は、
前記複数の処理部の並び方向と平行に配置された第1梁部および第2梁部を含み、
前記水平配管は、
前記第1梁部および前記第2梁部の間であって、前記第1梁部の上面と下面の間に配置され、さらに前記複数の処理部に渡って配置されること
を特徴とする基板処理装置。 - 前記水平方向に並べて配置された前記複数の処理部は少なくとも上下2段に設けられ、
前記処理流体供給ラインは、
上段側の前記複数の処理部および下段側の前記複数の処理部それぞれの前記水平配管を接続する垂直配管を含み、
前記柱部は、
前記第1梁部および前記第2梁部の一端側に垂直に設けられる第1柱部の組と、前記第1梁部および前記第2梁部の他端側に垂直に設けられる第2柱部の組とを含み、
前記垂直配管は、
前記第1柱部の組の対向面間、または、前記第2柱部の組の対向面間に配置されること
を特徴とする請求項1に記載の基板処理装置。 - 前記第1梁部および前記第2梁部それぞれの下面を連結する板材
をさらに備えることを特徴とする請求項1または2に記載の基板処理装置。 - 前記梁部は、角材であること
を特徴とする請求項1、2または3に記載の基板処理装置。 - 前記水平配管を収容する筐体
をさらに備えることを特徴とする請求項1〜4のいずれか一つに記載の基板処理装置。 - 前記分岐管に設けられ、前記処理流体の通流を制御する通流制御部
をさらに備え、
前記通流制御部は、前記筐体に収容されること
を特徴とする請求項5に記載の基板処理装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016163669A JP6675955B2 (ja) | 2016-08-24 | 2016-08-24 | 基板処理装置 |
KR2020170004385U KR200496544Y1 (ko) | 2016-08-24 | 2017-08-18 | 기판 처리 장치 |
CN201721067465.4U CN207303051U (zh) | 2016-08-24 | 2017-08-24 | 基板处理装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016163669A JP6675955B2 (ja) | 2016-08-24 | 2016-08-24 | 基板処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018032724A true JP2018032724A (ja) | 2018-03-01 |
JP6675955B2 JP6675955B2 (ja) | 2020-04-08 |
Family
ID=61304531
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016163669A Active JP6675955B2 (ja) | 2016-08-24 | 2016-08-24 | 基板処理装置 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP6675955B2 (ja) |
KR (1) | KR200496544Y1 (ja) |
CN (1) | CN207303051U (ja) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10303168A (ja) * | 1997-04-28 | 1998-11-13 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP2014099528A (ja) * | 2012-11-15 | 2014-05-29 | Tokyo Electron Ltd | 液処理装置 |
JP2016115924A (ja) * | 2014-12-16 | 2016-06-23 | 東京エレクトロン株式会社 | 基板液処理装置 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5146526B2 (ja) | 2010-12-28 | 2013-02-20 | 東京エレクトロン株式会社 | 液処理装置 |
-
2016
- 2016-08-24 JP JP2016163669A patent/JP6675955B2/ja active Active
-
2017
- 2017-08-18 KR KR2020170004385U patent/KR200496544Y1/ko active IP Right Grant
- 2017-08-24 CN CN201721067465.4U patent/CN207303051U/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10303168A (ja) * | 1997-04-28 | 1998-11-13 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP2014099528A (ja) * | 2012-11-15 | 2014-05-29 | Tokyo Electron Ltd | 液処理装置 |
JP2016115924A (ja) * | 2014-12-16 | 2016-06-23 | 東京エレクトロン株式会社 | 基板液処理装置 |
Also Published As
Publication number | Publication date |
---|---|
KR200496544Y1 (ko) | 2023-02-23 |
KR20180000636U (ko) | 2018-03-06 |
JP6675955B2 (ja) | 2020-04-08 |
CN207303051U (zh) | 2018-05-01 |
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