JP2017526969A - Euv投影リソグラフィのための照明光学ユニット - Google Patents
Euv投影リソグラフィのための照明光学ユニット Download PDFInfo
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- JP2017526969A JP2017526969A JP2017511203A JP2017511203A JP2017526969A JP 2017526969 A JP2017526969 A JP 2017526969A JP 2017511203 A JP2017511203 A JP 2017511203A JP 2017511203 A JP2017511203 A JP 2017511203A JP 2017526969 A JP2017526969 A JP 2017526969A
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- 238000005286 illumination Methods 0.000 title claims abstract description 100
- 230000003287 optical effect Effects 0.000 title claims abstract description 68
- 238000001459 lithography Methods 0.000 title claims abstract description 6
- 238000011144 upstream manufacturing Methods 0.000 claims abstract description 7
- 238000003384 imaging method Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 210000001747 pupil Anatomy 0.000 description 18
- 230000000694 effects Effects 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 201000009310 astigmatism Diseases 0.000 description 2
- 206010027646 Miosis Diseases 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 210000003734 kidney Anatomy 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
- G02B19/0004—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed
- G02B19/0019—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having reflective surfaces only (e.g. louvre systems, systems with multiple planar reflectors)
- G02B19/0023—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having reflective surfaces only (e.g. louvre systems, systems with multiple planar reflectors) at least one surface having optical power
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
- G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
- G02B19/0095—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with ultraviolet radiation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Lenses (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
B’opt=−b’G/g (3)
fopt/(1+a)<f<fopt/(1−a) (4a)
[0.1b’g/(g−b’)]<f<[10b’g/(g−b’)] (5)
及び
f1,2=−r1,2/2 (9)
2mm≦G≦10mm
0.4mm≦F≦2mm
2mm≦B’≦12m
0°≦alpha/2≦20°
−2000mm≦g≦−1000mm
1000mm≦b’≦2000mm
300mm≦f1≦1300mm
−2600mm≦r1≦−600mm
350mm≦f2≦1400mm
−2800mm≦r2≦−700mm
−2000mm≦g≦−1000mm
1000mm≦b’≦3000mm
300mm≦f1≦1600mm
−3200mm≦r1≦−600mm
350mm≦f2≦1700mm
−3400mm≦r2≦−700mm
21 個々のミラー
24 実像平面
b 像距離
g 物体距離
Claims (13)
- 結像される物体(8)を配置可能である物体視野(12)を照明光(3)で照明するためのEUV投影リソグラフィのための照明光学ユニット(11)であって、
典型的直径Gを有する上流光源(5a)の像としての2次光源(27)の結像生成のための第1のファセットミラー(6)を含み、
前記第1のファセットミラー(6)は、2mm×2mmよりも小さくて典型的直径Fを有するミラー面を各々が含む多数の個々のミラー(21)を含み、
前記第1のファセットミラー(6)は、前記光源(5a)から距離|g|を有し、
第2のファセットミラー(7)を含み、
前記2つのファセットミラー(6,7)は、互いからの距離b’を有し、
前記第1のファセットミラー(6)の前記個々のミラー(21)は、該第1のファセットミラー(6)の該個々のミラー(21)上への前記照明光(3)の入射平面(yz)に焦点距離fを有し、該焦点距離に以下:
[0.1b’g/(g−b’)]<f<[10b’g/(g−b’)]
が適用される、
ことを特徴とする照明光学ユニット(11)。 - 前記焦点距離fは、最大で0.3b’G/((b’−g)F)倍だけ理想的焦点距離fopt=b’g/(g−b’)から外れることを特徴とする請求項1に記載の照明光学ユニット。
- 前記焦点距離fは、最大で750μm[g/((g−b’)・F)]倍だけ理想的焦点距離fopt=b’g/(g−b’)から外れることを特徴とする請求項1又は請求項2に記載の照明光学ユニット。
- 前記個々のミラー(21)の少なくとも一部が、一方で前記入射平面及び/又は折り返し平面(yz)、他方で該折り返し平面に垂直なもの(xz)において異なる曲率半径を有し、
前記折り返し平面(yz)における前記曲率半径r1に対して以下:
−20b’g/((g−b’)cos(α/2))<r1<−0.2b’g/((g−b’)cos(α/2))
が適用され、αは、前記第1のファセットミラー(6)のそれぞれの前記個々のミラー(21)での反射時の前記照明光(3)の折り返し角度である、
ことを特徴とする請求項1から請求項3のいずれか1項に記載の照明光学ユニット。 - 前記折り返し平面に垂直(xy)な曲率半径r2に対して以下:
−20b’g cos(α/2)/(g−b’)<r2<−0.2b’g cos(α/2)/(g−b’)
が適用され、αは、前記第1のファセットミラー(6)のそれぞれの前記個々のミラー(21)での反射時の前記照明光(3)の折り返し角度である、
ことを特徴とする請求項4又は請求項5に記載の照明光学ユニット。 - 前記曲率半径r2は、最大で750μm[g/((g−b’)・F)]倍だけ理想的曲率半径r2opt=−2b’g cos(α/2)/(g−b’)から外れることを特徴とする請求項6に記載の照明光学ユニット。
- 結像される物体(8)を配置可能である物体視野(12)を照明光(3)で照明するためのEUV投影リソグラフィのための照明光学ユニット(11)であって、
第1のファセットミラー(6)を含み、
典型的寸法Gを有する前記第1のファセットミラー(6)の部分を前記物体視野(12)の領域内のファセット像(23a)内に結像するための複数の第2のファセット(26)を含む第2のファセットミラー(7)を含み、
前記2つのファセットミラー(6,7)は、互いからの距離|g|を有し、
前記第2のファセットミラーは、前記物体視野(12)からの距離b’を有し、
前記第2のファセットミラー(7)の前記ファセット(26)は、該第2のファセットミラー(7)の該個々のミラー(26)上への前記照明光(3)の入射平面(yz)に焦点距離fを有し、該焦点距離に対して以下:
[0.1b’g/(g−b’)]<f<[10b’g/(g−b’)]
が適用される、
ことを特徴とする照明光学ユニット(11)。 - 請求項1から請求項8のいずれか1項に主張する照明光学ユニット(11)を含み、
物体視野(12)を像視野(17)内に結像するための投影光学ユニット(10)を含む、
ことを特徴とする光学系。 - 請求項1から請求項8のいずれか1項に主張する照明光学ユニット(11)を含み、
EUV光源(2)を含む、
ことを特徴とする照明系。 - 請求項9に主張する光学系を含み、
EUV光源(2)を含む、
ことを特徴とする投影露光装置。 - 構造化構成要素を生成する方法であって、
レチクル(8)を与える段階と、
照明光(3)に対して感受性であるコーティングを有するウェーハ(19)を与える段階と、
請求項11に主張する投影露光装置(1)を用いて前記レチクル(8)の少なくとも一部分を前記ウェーハ(19)の上に投影する段階と、
前記照明光(3)によって露光された前記ウェーハ(19)上の前記感光層を現像する段階と、
を含むことを特徴とする方法。 - 請求項12に主張する方法に従って生成された構成要素。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102014216802.3 | 2014-08-25 | ||
DE102014216802.3A DE102014216802A1 (de) | 2014-08-25 | 2014-08-25 | Beleuchtungsoptik für die EUV-Projektions-Lithographie |
PCT/EP2015/069038 WO2016030248A1 (de) | 2014-08-25 | 2015-08-19 | Beleuchtungsoptik für die euv-projektions-lithografie |
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JP2017526969A true JP2017526969A (ja) | 2017-09-14 |
JP2017526969A5 JP2017526969A5 (ja) | 2018-09-27 |
JP6691105B2 JP6691105B2 (ja) | 2020-04-28 |
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Country Status (4)
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US (1) | US10018917B2 (ja) |
JP (1) | JP6691105B2 (ja) |
DE (1) | DE102014216802A1 (ja) |
WO (1) | WO2016030248A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2021503623A (ja) * | 2017-11-17 | 2021-02-12 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 投影リソグラフィシステム用の瞳ファセットミラー、光学システム、および照明光学系 |
Families Citing this family (1)
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DE102020210829A1 (de) | 2020-08-27 | 2022-03-03 | Carl Zeiss Smt Gmbh | Pupillenfacettenspiegel für eine Beleuchtungsoptik einer Projektionsbelichtungsanlage |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002319536A (ja) * | 2001-01-08 | 2002-10-31 | Carl Zeiss Semiconductor Manufacturing Technologies Ag | 大きさの異なる格子素子を有する照明光学系 |
JP2011512659A (ja) * | 2008-02-15 | 2011-04-21 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィのための投影露光装置に使用するファセットミラー |
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DE19903807A1 (de) * | 1998-05-05 | 1999-11-11 | Zeiss Carl Fa | Beleuchtungssystem insbesondere für die EUV-Lithographie |
DE102008009600A1 (de) * | 2008-02-15 | 2009-08-20 | Carl Zeiss Smt Ag | Facettenspiegel zum Einsatz in einer Projektionsbelichtungsanlage für die Mikro-Lithographie |
KR101478400B1 (ko) | 2009-03-06 | 2015-01-06 | 칼 짜이스 에스엠티 게엠베하 | 조명 광학 시스템 및 마이크로리소그래피용 광학 시스템 |
US9372413B2 (en) * | 2011-04-15 | 2016-06-21 | Asml Netherlands B.V. | Optical apparatus for conditioning a radiation beam for use by an object, lithography apparatus and method of manufacturing devices |
DE102012206612A1 (de) | 2012-04-23 | 2013-10-24 | Carl Zeiss Smt Gmbh | Optisches Bauelement zur Führung eines Strahlungsbündels |
DE102012212453A1 (de) | 2012-07-17 | 2014-01-23 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik |
-
2014
- 2014-08-25 DE DE102014216802.3A patent/DE102014216802A1/de not_active Ceased
-
2015
- 2015-08-19 JP JP2017511203A patent/JP6691105B2/ja active Active
- 2015-08-19 WO PCT/EP2015/069038 patent/WO2016030248A1/de active Application Filing
-
2017
- 2017-02-17 US US15/435,851 patent/US10018917B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002319536A (ja) * | 2001-01-08 | 2002-10-31 | Carl Zeiss Semiconductor Manufacturing Technologies Ag | 大きさの異なる格子素子を有する照明光学系 |
JP2011512659A (ja) * | 2008-02-15 | 2011-04-21 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィのための投影露光装置に使用するファセットミラー |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021503623A (ja) * | 2017-11-17 | 2021-02-12 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 投影リソグラフィシステム用の瞳ファセットミラー、光学システム、および照明光学系 |
JP7340520B2 (ja) | 2017-11-17 | 2023-09-07 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 投影リソグラフィシステム用の瞳ファセットミラー、光学システム、および照明光学系 |
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JP6691105B2 (ja) | 2020-04-28 |
US20170160642A1 (en) | 2017-06-08 |
US10018917B2 (en) | 2018-07-10 |
DE102014216802A1 (de) | 2016-02-25 |
WO2016030248A1 (de) | 2016-03-03 |
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