JP2017516306A - 持続的ボンディングのための方法及び装置 - Google Patents
持続的ボンディングのための方法及び装置 Download PDFInfo
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- H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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Abstract
Description
・金属、特にCu,Ag,Au,Al,Fe,Ni,Co,Pt,W,Cr,Pb,Ti,Te,Sn,Zn
・合金、
・(相応のドープ物質を含む)半導体、特に元素半導体、好ましくはSi,Ge,Se,Te,B,α‐Sn
・化合物半導体、好ましくはGaAs,GaN,InP,InxGa1−xN,InSb,InAs,GaSb,AlN,InN,GaP,BeTe,ZnO,CuInGaSe2,ZnS,ZnSe,ZnTe,CdS,CdSe,CdTe,Hg(1−x)Cd(x)Te,BeSe,HgS,AlxGa1−xAs,GaS,GaSe,GaTe,InS,InSe,InTe,CuInSe2,CuInS2,CuInGaS2,SiC,SiGe
に対して適用可能である。
Claims (8)
- 第1の基板(1)の第1の層(2)をボンディング界面(5)で第2の基板(1’)の第2の層(2’)に持続的にボンディングする方法において、
前記第1の層(2)及び/又は前記第2の層(2’)の転位(4)の転位密度を、少なくとも前記ボンディング界面(5)の領域において、ボンディング前及び/又はボンディング中に高める、
ことを特徴とする方法。 - 前記転位密度を、少なくとも1つの振動、好ましくは複数の振動によって高め、
前記少なくとも1つの振動を、好ましくは超音波領域で動作する振動装置(6,6’)によって、特には局所的に導入する、
請求項1に記載の方法。 - ボンディング時のボンディング温度を、最大300℃、特に最大200℃、好ましくは最大150℃、より好ましくは最大100℃、さらに好ましくは最大50℃とする、
請求項1又は2に記載の方法。 - 特に個別の、前記第1の層(2)、及び/又は、特に個別の、前記第2の層(2’)は、金属、特にCuであり、前記第1の基板(1)及び/又は前記第2の基板(1’)は、半導体である、
請求項1から3までのいずれか1項に記載の方法。 - 前記ボンディング界面(5)に対する横断方向で前記基板(1,1’)に作用する圧力fに、特に0より大きい最小合成力が生じるように、振動を重畳する、
請求項1から4までのいずれか1項に記載の方法。 - 第1の基板(1)の第1の層(2)をボンディング界面(5)で第2の基板(1’)の第2の層(2’)に持続的にボンディングする装置において、
前記第1の基板(1)を受容するサンプルホルダ(7,7’,7’’,7’’’,7’v)と、
前記第1の層(2)及び/又は前記第2の層(2’)の転位(4)の転位密度を少なくとも前記ボンディング界面(5)の領域において高めるのに適した、前記基板(1,1’)に圧力を印加する圧力プレート(10,10’)と、
を備える、
ことを特徴とする装置。 - 前記サンプルホルダ(7,7’,7’’,7’’’,7’v)及び/又は前記圧力プレート(10,10’)がそれぞれの下面(7r,10r)側で固定側支承部(12)によって支持されている、
請求項6に記載の装置。 - 少なくとも1つの振動、好ましくは複数の振動が印加される、
請求項6又は7に記載の装置。
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DE102014106231.0A DE102014106231A1 (de) | 2014-05-05 | 2014-05-05 | Verfahren und Vorrichtung zum permanenten Bonden |
PCT/EP2015/058739 WO2015169603A1 (de) | 2014-05-05 | 2015-04-22 | Verfahren und vorrichtung zum permanenten bonden |
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JP3867673B2 (ja) * | 2003-01-28 | 2007-01-10 | 松下電工株式会社 | 多層プリント配線板の製造方法 |
US20060003548A1 (en) * | 2004-06-30 | 2006-01-05 | Kobrinsky Mauro J | Highly compliant plate for wafer bonding |
KR20100043478A (ko) * | 2008-10-20 | 2010-04-29 | 삼성전기주식회사 | 정전 척 및 이를 구비한 기판 접합 장치 |
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AT511384B1 (de) | 2011-05-11 | 2019-10-15 | Thallner Erich | Verfahren und vorrichtung zum bonden zweier wafer |
DE102011080534A1 (de) * | 2011-08-05 | 2013-02-07 | Hesse & Knipps Gmbh | Verfahren zum Ultraschallbonden |
EP2729961A1 (de) * | 2011-08-30 | 2014-05-14 | Ev Group E. Thallner GmbH | Verfahren zum permanenten bonden von wafern durch eine verbindungsschicht mittels festkörperdiffusion oder phasenumwandlung |
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JPS6363584A (ja) * | 1986-09-02 | 1988-03-19 | Nippon Steel Corp | 金属の固相接合方法 |
JP2002103055A (ja) * | 2000-09-29 | 2002-04-09 | Japan Science & Technology Corp | 動的再結晶を利用した拡散接合法 |
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