JP2017501589A - 蛍光変換体を有する接着剤のない発光デバイス - Google Patents
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- 239000000758 substrate Substances 0.000 claims abstract description 88
- 238000006243 chemical reaction Methods 0.000 claims abstract description 49
- 239000000463 material Substances 0.000 claims abstract description 45
- 238000000034 method Methods 0.000 claims abstract description 22
- 239000000853 adhesive Substances 0.000 claims abstract description 14
- 230000001070 adhesive effect Effects 0.000 claims abstract description 14
- 238000003475 lamination Methods 0.000 claims abstract description 10
- 229920005573 silicon-containing polymer Polymers 0.000 claims abstract description 5
- 239000011521 glass Substances 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 238000010030 laminating Methods 0.000 claims description 10
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000012778 molding material Substances 0.000 claims 1
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- 230000003287 optical effect Effects 0.000 abstract description 14
- 229920000642 polymer Polymers 0.000 abstract description 10
- 238000010438 heat treatment Methods 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 9
- 239000002131 composite material Substances 0.000 description 6
- 238000000465 moulding Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000005340 laminated glass Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000011325 microbead Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- H—ELECTRICITY
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- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
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Abstract
Description
波長変換フィルム220は、波長変換特性を決定するために試験することができる。そのような実施形態では、米国特許第7,344,952号に開示されているように、異なる特定の波長の発光などの異なる光出力特性を有する発光素子が、それらの特性に基づいて種分け(binned)される。例えば、もし発光素子が、公称波長450nmの青色光を放出すると、その試験された発光素子は、4種のビン(bin)1〜ビン4のうちの1つに分類(グループ分け)できる。4種のビンは、1) 440-445nm; 2) 445-450nm; 3) 450-455nm; 及び 4) 455-460nmである。波長変換フィルムの試験した特性に基づいて、波長変換フィルムの整合のために適切なビンが認識され、所望の合成色出力をもたらす。所望の合成色出力は、例えば、所望の色温度にある白色光であってよい。発光構造体150の発光素子110はそれぞれ、特定の波長変換フィルム220と対をなすための認識されたビンから得られる。変形的には、異なる特性を有する多重波長変換フィルムが提供されうる。発光構造体150の特定の発光素子110の特性に対応するように、特定の波長変換フィルム220を選択して、所望の合成色出力をもたらすことができる。
本発明は、発光デバイスの分野に関し、特に、蛍光変換体を含み、素子を互いに固着するための接着剤を用いない発光デバイスに関する。
Claims (15)
- 発光デバイスであって、
発光素子と、
透明基板と、
波長変換フィルムと、
を有し、
前記波長変換フィルムが、他の接着剤なしに、前記透明基板及び前記発光素子に直接に積層されている、発光デバイス。 - 前記透明基板はガラス又はサファイアのうちの1つを有する、請求項1に記載の発光デバイス。
- 前記波長変換フィルムは1つ以上の蛍光体を含む、請求項1に記載の発光デバイス。
- 前記1つ以上の蛍光体がシリコーンポリマーに埋設されている、請求項3に記載の発光デバイス。
- 前記波長変換フィルムはシリコーンポリマーを含む、請求項1に記載の発光デバイス。
- 前記波長変換フィルムは、前記発光素子への積層の前に前記透明基板に積層されている、請求項1に記載の発光デバイス。
- 前記発光素子は、ある寸法を有する発光表面を含み、前記波長変換フィルムは、前記発光表面の前記寸法に実質的に等しい受光表面を含む、請求項1に記載の発光デバイス。
- 透明基板は、前記発光表面の前記寸法に実質的に等しい受光表面を含む、請求項7に記載の発光デバイス。
- 前記透明基板は、前記波長変換フィルムに積層された表面と反対側の非平坦表面を含む、請求項1に記載の発光デバイス。
- 前記発光素子及び前記波長変換フィルムを包囲する反射性材料を含む、請求項1に記載の発光デバイス。
- 前記反射性材料は前記透明基板も包囲する、請求項10に記載の発光デバイス。
- 発光デバイスの製造方法であって、
透明基板に積層された波長変換フィルムを有する小プレートを提供するステップと、
発光表面を含む発光素子を提供するステップと、
前記小プレートの前記波長変換フィルムを、他の接着剤なしに、前記発光表面に積層するステップと、
を有する製造方法。 - 前記の小プレートを提供するステップが、
一枚の波長変換材料を、他の接着剤なしに、かつ、前記波長変換材料を完全には硬化させずに、透明プレートに積層するステップと、
前記の積層された波長変換フィルムとともに前記透明プレートを、複数の小プレートへとスライシングするステップとを含む、
請求項12に記載の製造方法。 - 前記の発光素子を提供するステップが、基板上に複数の発光素子を提供するステップを含み、
前記小プレートの前記波長変換フィルムを積層するステップが、複数の小プレートを複数の発光素子に積層するステップを含む、
請求項12に記載の製造方法。 - モールド材料を適用して、前記基板上の前記複数の発光素子を包囲し、前記複数の小プレートの各々の少なくとも一部を包囲するステップを含む、請求項14に記載の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US201461924283P | 2014-01-07 | 2014-01-07 | |
US61/924,283 | 2014-01-07 | ||
PCT/IB2014/067412 WO2015104623A1 (en) | 2014-01-07 | 2014-12-30 | Glueless light emitting device with phosphor converter |
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JP2017501589A true JP2017501589A (ja) | 2017-01-12 |
JP2017501589A5 JP2017501589A5 (ja) | 2018-02-15 |
JP6709159B2 JP6709159B2 (ja) | 2020-06-10 |
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US (1) | US11024781B2 (ja) |
EP (1) | EP3092666B1 (ja) |
JP (1) | JP6709159B2 (ja) |
KR (1) | KR102323289B1 (ja) |
CN (2) | CN105874617A (ja) |
TW (1) | TWI724985B (ja) |
WO (1) | WO2015104623A1 (ja) |
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JP6709159B2 (ja) | 2020-06-10 |
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CN110010746A (zh) | 2019-07-12 |
KR20160106152A (ko) | 2016-09-09 |
WO2015104623A1 (en) | 2015-07-16 |
TWI724985B (zh) | 2021-04-21 |
US11024781B2 (en) | 2021-06-01 |
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