JP2017160105A - Sn-Zn-O-BASED OXIDE SINTERED BODY AND METHOD FOR PRODUCING THE SAME - Google Patents

Sn-Zn-O-BASED OXIDE SINTERED BODY AND METHOD FOR PRODUCING THE SAME Download PDF

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JP2017160105A
JP2017160105A JP2016082691A JP2016082691A JP2017160105A JP 2017160105 A JP2017160105 A JP 2017160105A JP 2016082691 A JP2016082691 A JP 2016082691A JP 2016082691 A JP2016082691 A JP 2016082691A JP 2017160105 A JP2017160105 A JP 2017160105A
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sintered body
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powder
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勲雄 安東
Isao Ando
勲雄 安東
誠 小沢
Makoto Ozawa
誠 小沢
茂 五十嵐
Shigeru Igarashi
茂 五十嵐
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Sumitomo Metal Mining Co Ltd
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Priority to KR1020187024734A priority patent/KR20180116293A/en
Priority to TW105141143A priority patent/TWI748971B/en
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Abstract

PROBLEM TO BE SOLVED: To provide a Sn-Zn-O-based oxide sintered body which has mechanical strength and characteristics of a high density and a low resistance, is utilized as a sputtering target, and has a high Sn concentration; and to provide a method for producing such a Sn-Zn-O-based oxide sintered body.SOLUTION: The Sn-Zn-O-based oxide sintered body including Sn at an atomic number ratio Sn/(Zn+Sn) of 0.75 or more and 0.9 or less, including at least one addition element (X) selected from Nb, Ta, W, and Mo at an atomic number ratio X/(Sn+Zn+X) of 0.001 or more and 0.1 or less with respect to the total amount of Sn, Zn, and the addition element (X), having a relative density of 95% or more, having a specific resistance of 1 Ω cm or less, and having a high Sn concentration is produced by being burnt under conditions of a temperature-raising rate of 0.4°C/min or more and 0.8°C/min or less from 700°C to sintering temperature, a sintering temperature of 1300°C or more and 1460°C or less, and 10 hours or more and 30 hours or less in an atmosphere having an oxygen concentration of 70 vol.% or more in a burning furnace.SELECTED DRAWING: None

Description

本発明は、太陽電池、液晶表面素子、タッチパネル等に適用される透明導電膜を直流スパッタリング、高周波スパッタリングといったスパッタリング法で製造する際にスパッタリングターゲットとして使用されるＳｎ−Ｚｎ−Ｏ系酸化物焼結体に係り、特に、焼結体の加工中における破損、および、スパッタリング成膜中におけるスパッタリングターゲットの破損やクラックの発生等を抑制できるＳｎ−Ｚｎ−Ｏ系酸化物焼結体とその製造方法に関するものである。   The present invention is a Sn—Zn—O-based oxide sintered material used as a sputtering target when a transparent conductive film applied to a solar cell, a liquid crystal surface element, a touch panel or the like is manufactured by a sputtering method such as direct current sputtering or high frequency sputtering. In particular, the present invention relates to a Sn—Zn—O-based oxide sintered body that can suppress damage during processing of the sintered body, and damage to the sputtering target and generation of cracks during sputtering film formation, and a method for manufacturing the same. Is.

高い導電性と可視光領域での高い透過率とを有する透明導電膜は、太陽電池、液晶表示素子、有機エレクトロルミネッセンスおよび無機エレクトロルミネッセンス等の表面素子や、タッチパネル用電極等に利用される他、自動車窓や建築用の熱線反射膜、帯電防止膜、冷凍ショーケース等の各種の防曇用透明発熱体としても利用されている。   A transparent conductive film having high conductivity and high transmittance in the visible light region is used for surface elements such as solar cells, liquid crystal display elements, organic electroluminescence and inorganic electroluminescence, electrodes for touch panels, etc. It is also used as various antifogging transparent heating elements such as automobile windows, heat ray reflective films for buildings, antistatic films, and refrigerated showcases.

透明導電膜としては、アンチモンやフッ素をドーパントとして含む酸化錫（ＳｎＯ2）、アルミニウムやガリウムをドーパントとして含む酸化亜鉛（ＺｎＯ）、および、錫をドーパントとして含む酸化インジウム（Ｉｎ2Ｏ3）等が知られている。特に、錫をドーパントとして含む酸化インジウム（Ｉｎ2Ｏ3）膜、すなわち、Ｉｎ−Ｓｎ−Ｏ系の膜はＩＴＯ（Indium tin oxide）膜と称され、低抵抗の膜が容易に得られることから広く用いられている。 Examples of the transparent conductive film include tin oxide (SnO 2 ) containing antimony or fluorine as a dopant, zinc oxide (ZnO) containing aluminum or gallium as a dopant, and indium oxide (In 2 O 3 ) containing tin as a dopant. Are known. In particular, an indium oxide (In 2 O 3 ) film containing tin as a dopant, that is, an In—Sn—O-based film is called an ITO (Indium tin oxide) film, and a low resistance film can be easily obtained. Widely used.

上記透明導電膜の製造方法としては、直流スパッタリング、高周波スパッタリングといったスパッタリング法が良く用いられている。スパッタリング法は、蒸気圧の低い材料の成膜や精密な膜厚制御を必要とする際に有効な手法であり、操作が非常に簡便であるため、工業的に広範に利用されている。   As a method for producing the transparent conductive film, sputtering methods such as direct current sputtering and high frequency sputtering are often used. The sputtering method is an effective method when film formation of a material having a low vapor pressure or precise film thickness control is required, and since the operation is very simple, it is widely used industrially.

このスパッタリング法は、薄膜の原料としてスパッタリングターゲットを用いる。スパッタリングターゲットは、成膜したい薄膜を構成している金属元素を含む個体であり、金属、金属酸化物、金属窒化物、金属炭化物等の焼結体や、場合によっては単結晶が使用される。スパッタリング法では、一般にその内部に基板とスパッタリングターゲットを配置できるようになった真空チャンバーを有する装置を用い、基板とスパッタリングターゲットを配置した後、真空チャンバーを高真空にし、その後アルゴン等の希ガスを導入し、真空チャンバー内を約１０Ｐａ以下のガス圧とする。そして、基板を陽極とし、スパッタリングターゲットを陰極とし、両者の間にグロー放電を起こしてアルゴンプラズマを発生させ、プラズマ中のアルゴン陽イオンを陰極のスパッタリングターゲットに衝突させ、これによってはじきとばされるターゲットの成分粒子を基板上に堆積させて膜を形成するものである。   This sputtering method uses a sputtering target as a thin film material. The sputtering target is an individual containing a metal element constituting a thin film to be formed, and a sintered body such as a metal, a metal oxide, a metal nitride, and a metal carbide, or a single crystal depending on the case is used. In the sputtering method, generally, an apparatus having a vacuum chamber in which a substrate and a sputtering target can be arranged is used. After the substrate and the sputtering target are arranged, the vacuum chamber is set to a high vacuum, and then a rare gas such as argon is introduced. Then, the inside of the vacuum chamber is brought to a gas pressure of about 10 Pa or less. Then, the substrate is an anode, the sputtering target is a cathode, a glow discharge is generated between the two to generate argon plasma, and the argon cation in the plasma collides with the cathode sputtering target, thereby repelling the target. The component particles are deposited on the substrate to form a film.

そして、上記透明導電膜を製造するため、従来、ＩＴＯ等の酸化インジウム系の材料が広範囲に用いられている。しかし、インジウム金属は、地球上で希少金属であることと毒性を有しているため環境や人体に対し悪影響が懸念されており、非インジウム系の材料が求められている。   And in order to manufacture the said transparent conductive film, conventionally, indium oxide type materials, such as ITO, are used extensively. However, since indium metal is a rare metal on the earth and has toxicity, there are concerns about adverse effects on the environment and the human body, and non-indium materials are required.

上記非インジウム系の材料としては、上述したようにアルミニウムやガリウムをドーパントとして含む酸化亜鉛（ＺｎＯ）系材料、および、アンチモンやフッ素をドーパントとして含む酸化錫（ＳｎＯ2）系材料が知られている。そして、上記酸化亜鉛（ＺｎＯ）系材料の透明導電膜はスパッタリング法で工業的に製造されているが、耐薬品性（耐アルカリ性、耐酸性）に乏しい等の欠点を有する。他方、酸化錫（ＳｎＯ2）系材料の透明導電膜は耐薬品性に優れているものの、高密度で耐久性のある酸化錫系焼結体ターゲットを製造し難いため、上記透明導電膜をスパッタリング法で製造することに困難が伴う欠点を有していた。 As the non-indium material, as described above, a zinc oxide (ZnO) material containing aluminum or gallium as a dopant and a tin oxide (SnO 2 ) material containing antimony or fluorine as a dopant are known. . And although the transparent conductive film of the said zinc oxide (ZnO) type | system | group material is manufactured industrially by sputtering method, it has faults, such as being poor in chemical resistance (alkali resistance, acid resistance). On the other hand, although the transparent conductive film made of tin oxide (SnO 2 ) is excellent in chemical resistance, it is difficult to produce a high-density and durable tin oxide-based sintered target. It has the disadvantages that are difficult to manufacture by the process.

そこで、これ等の欠点を改善する材料として、酸化亜鉛と酸化錫を主成分とする焼結体が提案されている。例えば、特許文献１には、ＳｎＯ2相とＺｎ2ＳｎＯ4相とからなり、当該Ｚｎ2ＳｎＯ4相の平均結晶粒径が１〜１０μｍの範囲である焼結体が記載されている。 Therefore, as a material for improving these disadvantages, a sintered body mainly composed of zinc oxide and tin oxide has been proposed. For example, Patent Document 1 describes a sintered body composed of a SnO 2 phase and a Zn 2 SnO 4 phase, and the average crystal grain size of the Zn 2 SnO 4 phase is in the range of 1 to 10 μm.

また、特許文献２には、平均結晶粒径が４．５μｍ以下で、ＣｕＫα線を使用したＸ線回折によるＺｎ2ＳｎＯ4相における(２２２)面、(４００)面の積分強度をＩ(２２２)、Ｉ(４００)としたとき、Ｉ(２２２)/[Ｉ(２２２)+Ｉ(４００)]で表される配向度が標準（０．４４）よりも大きい０．５２以上とした焼結体が記載されている。更に、特許文献２には、上記特性を備えた焼結体を製造する方法として、当該焼結体製造工程を、焼成炉内に酸素を含む雰囲気中において８００℃〜１４００℃の条件で成形体を焼成する工程と、最高焼成温度での保持が終了してから焼成炉内をＡｒガス等の不活性雰囲気にして冷却する工程とで構成する方法も記載されている。 Patent Document 2 discloses that the integrated intensity of the (222) plane and the (400) plane in the Zn 2 SnO 4 phase by X-ray diffraction using CuKα rays with an average crystal grain size of 4.5 μm or less is I (222 ) And I (400) , the degree of orientation represented by I (222) / [I (222) + I (400) ] is set to 0.52 or more, which is larger than the standard (0.44). The body is listed. Furthermore, in Patent Document 2, as a method for producing a sintered body having the above characteristics, the sintered body production process is performed under the conditions of 800 ° C. to 1400 ° C. in an atmosphere containing oxygen in a firing furnace. And a method of cooling the inside of the firing furnace to an inert atmosphere such as Ar gas after holding at the maximum firing temperature is also described.

しかし、特許文献１〜２に記載の方法は、Ｚｎを主成分とするＺｎ−Ｓｎ−Ｏ系酸化物焼結体を製造する方法として有効ではあるが、耐薬品性の高さから要望の多いＳｎを主成分とするＳｎ−Ｚｎ−Ｏ系酸化物焼結体、特に原子数比Ｓｎ／（Ｚｎ＋Ｓｎ）が０．７５以上０．９以下である高Ｓｎ濃度のＳｎ−Ｚｎ−Ｏ系酸化物焼結体を製造する方法として有効とは言えなかった。確かに、特許文献１〜２の方法を採ることで機械的強度に耐える焼結体強度は得られるものの、十分な密度や導電性を得ることが難しく、量産現場でのスパッタリング成膜に必要とされる特性としては満足いくものではなかった。すなわち、常圧焼結法において、焼結体の高密度化や導電性という点に至っては課題が残っている。   However, although the methods described in Patent Documents 1 and 2 are effective as a method for producing a Zn—Sn—O-based oxide sintered body containing Zn as a main component, there are many requests due to high chemical resistance. Sn-Zn-O-based oxide sintered body containing Sn as a main component, particularly Sn-Zn-O-based oxide having a high Sn concentration with an atomic ratio Sn / (Zn + Sn) of 0.75 to 0.9 It was not effective as a method for producing a sintered body. Although the sintered body strength that can withstand the mechanical strength can be obtained by adopting the methods of Patent Documents 1 and 2, it is difficult to obtain sufficient density and conductivity, which is necessary for sputtering film formation at the mass production site. The properties that were achieved were not satisfactory. In other words, in the normal pressure sintering method, problems remain in terms of increasing the density and conductivity of the sintered body.

特開２０１０−０３７１６１号公報（請求項１、１３〜１４参照）JP 2010-037161 A (refer to claims 1 and 13 to 14) 特開２０１３−０３６０７３号公報（請求項１、３参照）JP 2013-036073 A (refer to claims 1 and 3)

本発明はこのような要請に着目してなされたもので、Ｓｎを主成分とし、機械的強度に加え、高密度で低抵抗のＳｎ−Ｚｎ−Ｏ系酸化物焼結体とその製造方法を提供することを課題とする。   The present invention has been made paying attention to such demands. A Sn—Zn—O-based oxide sintered body having a high density and low resistance in addition to mechanical strength, and a manufacturing method thereof, which is mainly composed of Sn. The issue is to provide.

上述したようにＳｎを主成分とするＳｎ−Ｚｎ−Ｏ系酸化物焼結体、特に原子数比Ｓｎ／（Ｚｎ＋Ｓｎ）が０．７５以上０．９以下である高Ｓｎ濃度のＳｎ−Ｚｎ−Ｏ系酸化物焼結体は、高密度かつ低抵抗といった両特性を備えることが困難な材料である。   As described above, a Sn—Zn—O-based oxide sintered body containing Sn as a main component, particularly Sn—Zn— having a high Sn concentration with an atomic ratio Sn / (Zn + Sn) of 0.75 to 0.9. The O-based oxide sintered body is a material that is difficult to have both characteristics such as high density and low resistance.

その要因として、Ｓｎ−Ｚｎ−Ｏ系酸化物焼結体の主成分であるＳｎの焼結性が悪い点が挙げられ、かつ、Ｓｎ−Ｚｎ−Ｏ系酸化物焼結体において１０００℃付近で生成されるＺｎ2ＳｎＯ4という化合物とＳｎが共に揮発し易い点が挙げられる。焼結材の高密度化には一般的に焼成温度を上げることが効果的であるが、Ｚｎ2ＳｎＯ4相とＳｎの揮発性により焼成温度を上げることができないからである。尚、特許文献１の方法では、９００℃〜１１００℃の温度で焼成して仮焼粉末を製造し、得られた仮焼粉末を用いて１３００℃〜１６００℃の温度で本焼成を行うことにより高密度のＳｎ−Ｚｎ−Ｏ系酸化物焼結体を製造している。 The reason is that the sinterability of Sn, which is the main component of the Sn—Zn—O-based oxide sintered body, is poor, and the Sn—Zn—O-based oxide sintered body is around 1000 ° C. It can be mentioned that both the compound Zn 2 SnO 4 and Sn that are generated easily volatilize. This is because increasing the firing temperature is generally effective for increasing the density of the sintered material, but the firing temperature cannot be increased due to the volatility of the Zn 2 SnO 4 phase and Sn. In the method of Patent Document 1, a calcined powder is produced by firing at a temperature of 900 ° C. to 1100 ° C., and the main calcining is performed at a temperature of 1300 ° C. to 1600 ° C. using the obtained calcined powder. A high-density Sn—Zn—O-based oxide sintered body is manufactured.

しかし、特許文献１の方法においてもＳｎおよびＺｎ等の揮発を完全に抑制することはできず、高い密度を得ることは困難となる。また、１５００℃を超える高温で焼成しているため粒は大きくなり、焼結体強度に不安が残る。更に、導電性についても１×１０6Ω・ｃｍ以上と高い比抵抗値を示し、導電性に乏しい。 However, even the method of Patent Document 1 cannot completely suppress volatilization of Sn, Zn and the like, and it is difficult to obtain a high density. Moreover, since it baked at the high temperature exceeding 1500 degreeC, a grain becomes large and anxiety remains in sintered compact strength. Further, the electrical conductivity is as high as 1 × 10 6 Ω · cm or more, and the electrical conductivity is poor.

そこで、本発明の課題とするところは、Ｓｎを主成分としたＳｎ−Ｚｎ−Ｏ系酸化物焼結体、特に、原子数比Ｓｎ／（Ｚｎ＋Ｓｎ）が０．７５以上０．９以下である高Ｓｎ濃度のＳｎ−Ｚｎ−Ｏ系酸化物焼結体を前提とし、該酸化物焼結体の製造時において適正な焼成プロセスを施し、かつ、有効な添加物を加えることにより、量産性に優れた高密度かつ低抵抗のＳｎ−Ｚｎ−Ｏ系酸化物焼結体を提供することにある。   Therefore, the subject of the present invention is an Sn—Zn—O-based oxide sintered body containing Sn as a main component, in particular, the atomic ratio Sn / (Zn + Sn) is 0.75 or more and 0.9 or less. On the premise of a Sn-Zn-O-based oxide sintered body having a high Sn concentration, an appropriate firing process is performed at the time of manufacturing the oxide sintered body, and an effective additive is added to achieve mass productivity. An object of the present invention is to provide an excellent high density and low resistance Sn—Zn—O-based oxide sintered body.

上記課題を解決するため、本発明者等は、原子数比Ｓｎ／（Ｚｎ＋Ｓｎ）が０．７５以上０．９以下である高Ｓｎ濃度のＳｎ−Ｚｎ−Ｏ系酸化物焼結体について、その密度（相対密度９５％以上）と導電性（比抵抗１Ω・ｃｍ以下）を両立する製造条件を探索すると共に、昇温プロセス（焼成プロセス）と添加物の検討を行った。   In order to solve the above-mentioned problems, the present inventors have described the Sn—Zn—O-based oxide sintered body having a high Sn concentration in which the atomic ratio Sn / (Zn + Sn) is 0.75 or more and 0.9 or less. In addition to searching for manufacturing conditions that achieve both density (relative density of 95% or more) and conductivity (specific resistance of 1 Ω · cm or less), a temperature rise process (firing process) and additives were studied.

その結果、原子数比Ｓｎ／（Ｓｎ＋Ｚｎ）が０．７５以上０．９以下の割合とした条件で製造された高Ｓｎ濃度のＳｎ−Ｚｎ−Ｏ系酸化物焼結体でも、昇温プロセス（焼成プロセス）を適正に設定することで酸化物焼結体の緻密化が図れることが分かった。具体的には、焼成炉内の酸素濃度が７０体積％以上の雰囲気において、脱バインダー以降の昇温プロセス、すなわち７００℃から焼結温度までの昇温速度を０．４℃／ｍｉｎ以上０．８℃／ｍｉｎ以下に設定し、かつ、焼結温度を１３００℃以上１４６０℃以下に設定すると共に、１０時間以上３０時間以内の条件で焼成することにより、緻密化されたＳｎ−Ｚｎ−Ｏ系酸化物焼結体を製造できることが確認された。   As a result, even in a high Sn concentration Sn—Zn—O-based oxide sintered body manufactured under the condition that the atomic ratio Sn / (Sn + Zn) is set to a ratio of 0.75 to 0.9, a temperature rising process ( It was found that the oxide sintered body can be densified by appropriately setting the firing process. Specifically, in an atmosphere in which the oxygen concentration in the firing furnace is 70% by volume or higher, the temperature rising process after debinding, that is, the temperature rising rate from 700 ° C. to the sintering temperature is 0.4 ° C./min or higher. Sn-Zn-O system densified by setting to 8 ° C./min or less and sintering temperature to 1300 ° C. or more and 1460 ° C. or less and firing under conditions of 10 hours to 30 hours It was confirmed that an oxide sintered body can be produced.

更に、上記製造条件の下、Ｎｂ、Ｔａ、Ｗ、Ｍｏから選ばれた少なくとも１種を添加元素（Ｘ）として加えることで、高密度を維持したまま導電性にも優れたＳｎ−Ｚｎ−Ｏ系酸化物焼結体を製造できることが確認された。   Furthermore, by adding at least one selected from Nb, Ta, W, and Mo as an additive element (X) under the above production conditions, Sn—Zn—O excellent in conductivity while maintaining high density. It was confirmed that a system oxide sintered body can be produced.

尚、添加元素（Ｘ）の増量に伴い酸化物焼結体の密度が低下する傾向がある場合、Ｓｉ、Ｇｅ、Ｃｅ、Ｉｎ、Ｂｉ、Ｇａから選ばれた少なくとも１種を添加元素（Ｍ）として追加することにより上記密度の低下傾向を抑制でき、かつ、添加元素（Ｍ）の添加により相対密度を更に高めることができることも確認された。   In addition, when there exists a tendency for the density of oxide sinter to fall with the increase in additional element (X), at least 1 sort (s) chosen from Si, Ge, Ce, In, Bi, Ga is added element (M) As a result, it was confirmed that the above-mentioned tendency of decreasing the density can be suppressed, and that the relative density can be further increased by adding the additive element (M).

本発明はこのような技術的分析と発見により完成されたものである。   The present invention has been completed by such technical analysis and discovery.

すなわち、本発明に係る第１の発明は、
Ｓｎを主成分とするＳｎ−Ｚｎ−Ｏ系酸化物焼結体において、
Ｓｎを、原子数比Ｓｎ／（Ｚｎ＋Ｓｎ）として０．７５以上０．９以下の割合で含有し、かつ、Ｎｂ、Ｔａ、Ｗ、Ｍｏから選ばれた少なくとも１種の添加元素（Ｘ）を、ＳｎとＺｎと添加元素（Ｘ）の総量に対する原子数比Ｘ／（Ｓｎ＋Ｚｎ＋Ｘ）として０．００１以上０．１以下の割合で含有すると共に、相対密度が９５％以上かつ比抵抗が１Ω・ｃｍ以下であることを特徴とし、
第２の発明は、
第１の発明に記載のＳｎ−Ｚｎ−Ｏ系酸化物焼結体において、
Ｓｉ、Ｇｅ、Ｃｅ、Ｉｎ、Ｂｉ、Ｇａから選ばれた少なくとも１種の添加元素（Ｍ）を、ＳｎとＺｎと添加元素（Ｍ）の総量に対する原子数比Ｍ／（Ｓｎ＋Ｚｎ＋Ｍ）として０．０００１以上０．０４以下の割合で含有し、酸化物焼結体の相対密度が９８％以上であることを特徴とするものである。 That is, the first invention according to the present invention is:
In the Sn—Zn—O-based oxide sintered body containing Sn as a main component,
Sn is contained at a ratio of 0.75 to 0.9 in terms of atomic ratio Sn / (Zn + Sn), and at least one additive element (X) selected from Nb, Ta, W, and Mo is added. The atomic ratio X / (Sn + Zn + X) with respect to the total amount of Sn, Zn and additive element (X) is contained in a ratio of 0.001 or more and 0.1 or less, and the relative density is 95% or more and the specific resistance is 1 Ω · cm or less. It is characterized by
The second invention is
In the Sn—Zn—O-based oxide sintered body according to the first invention,
At least one additive element (M) selected from Si, Ge, Ce, In, Bi, and Ga is used as an atomic ratio M / (Sn + Zn + M) with respect to the total amount of Sn, Zn, and additive element (M). It is contained in a ratio of 0.04 or less, and the relative density of the oxide sintered body is 98% or more.

次に、本発明に係る第３の発明は、
Ｓｎを主成分とするＳｎ−Ｚｎ−Ｏ系酸化物焼結体の製造方法において、
原子数比Ｓｎ／（Ｚｎ＋Ｓｎ）が０．７５以上０．９以下となるように配合された酸化錫（ＳｎＯ2）粉末と酸化亜鉛（ＺｎＯ）粉末、および、Ｎｂ、Ｔａ、Ｗ、Ｍｏから選ばれた少なくとも１種の元素（Ｘ）で構成されかつＳｎとＺｎと添加元素（Ｘ）の総量に対する原子数比Ｘ／（Ｓｎ＋Ｚｎ＋Ｘ）が０．００１以上０．１以下となるように配合された添加元素（Ｘ）の酸化物粉末を、純水、有機バインダー、分散剤と混合し、得られたスラリーを乾燥しかつ造粒して造粒粉末を製造する造粒粉末製造工程と、
上記造粒粉末を加圧成形して成形体を得る成形体製造工程と、
焼成炉内の酸素濃度が７０体積％以上の雰囲気において、７００℃から焼結温度までの昇温速度が０．４℃／ｍｉｎ以上０．８℃／ｍｉｎ以下で、かつ、焼結温度が１３００℃以上１４６０℃以下で、１０時間以上３０時間以内の条件で上記成形体を焼成して焼結体を製造する焼結体製造工程、
を具備することを特徴とし、
また、第４の発明は、
第３の発明に記載のＳｎ−Ｚｎ−Ｏ系酸化物焼結体の製造方法において、
原子数比Ｓｎ／（Ｚｎ＋Ｓｎ）が０．７５以上０．９以下となるように配合された酸化錫（ＳｎＯ2）粉末と酸化亜鉛（ＺｎＯ）粉末、および、Ｎｂ、Ｔａ、Ｗ、Ｍｏから選ばれた少なくとも１種の元素（Ｘ）で構成されかつＳｎとＺｎと添加元素（Ｘ）の総量に対する原子数比Ｘ／（Ｓｎ＋Ｚｎ＋Ｘ）が０．００１以上０．１以下となるように配合された添加元素（Ｘ）の酸化物粉末に加え、Ｓｉ、Ｇｅ、Ｃｅ、Ｉｎ、Ｂｉ、Ｇａから選ばれた少なくとも１種の添加元素（Ｍ）で構成されかつＳｎとＺｎと添加元素（Ｍ）の総量に対する原子数比Ｍ／（Ｓｎ＋Ｚｎ＋Ｍ）として０．０００１以上０．０４以下となるように配合された添加元素（Ｍ）の酸化物粉末を更に添加することを特徴とするものである。 Next, the third invention according to the present invention is:
In the method for producing a Sn—Zn—O-based oxide sintered body containing Sn as a main component,
Selected from tin oxide (SnO 2 ) powder and zinc oxide (ZnO) powder, and Nb, Ta, W, and Mo mixed so that the atomic ratio Sn / (Zn + Sn) is 0.75 or more and 0.9 or less. And an atomic ratio X / (Sn + Zn + X) with respect to the total amount of Sn, Zn and additive element (X) is 0.001 or more and 0.1 or less. A granulated powder production step of mixing the oxide powder of the additive element (X) with pure water, an organic binder, a dispersant, drying and granulating the resulting slurry to produce a granulated powder,
A molded body manufacturing process for obtaining a molded body by pressure molding the granulated powder; and
In an atmosphere where the oxygen concentration in the firing furnace is 70% by volume or more, the rate of temperature increase from 700 ° C. to the sintering temperature is 0.4 ° C./min to 0.8 ° C./min and the sintering temperature is 1300. A sintered body production process for producing a sintered body by firing the molded body under a condition of 10 ° C or more and 1460 ° C or less and 10 hours or more and 30 hours or less,
It is characterized by comprising,
In addition, the fourth invention is
In the method for producing a Sn—Zn—O-based oxide sintered body according to the third invention,
Selected from tin oxide (SnO 2 ) powder and zinc oxide (ZnO) powder, and Nb, Ta, W, and Mo mixed so that the atomic ratio Sn / (Zn + Sn) is 0.75 or more and 0.9 or less. And an atomic ratio X / (Sn + Zn + X) with respect to the total amount of Sn, Zn and additive element (X) is 0.001 or more and 0.1 or less. In addition to the oxide powder of the additive element (X), it is composed of at least one additive element (M) selected from Si, Ge, Ce, In, Bi, and Ga, and Sn, Zn, and the additive element (M). The oxide powder of the additive element (M) blended so that the atomic ratio M / (Sn + Zn + M) with respect to the total amount is 0.0001 or more and 0.04 or less is further added.

本発明においては、Ｓｎを、原子数比Ｓｎ／（Ｓｎ＋Ｚｎ）として０．７５以上０・９以下の割合で含有する条件と、Ｎｂ、Ｔａ、Ｗ、Ｍｏから選ばれた少なくとも１種を添加元素（Ｘ）として加える条件を具備させることで、常圧焼結法により量産性に優れた高密度かつ低抵抗のＳｎ−Ｚｎ−Ｏ系酸化物焼結体を得ることが可能となる。   In the present invention, the additive element contains at least one selected from Nb, Ta, W, and Mo under the condition that Sn is contained in the atomic ratio Sn / (Sn + Zn) in a ratio of 0.75 to 0.9. By providing the conditions added as (X), it is possible to obtain a high-density and low-resistance Sn—Zn—O-based oxide sintered body excellent in mass productivity by the atmospheric pressure sintering method.

以下、本発明の実施の形態について詳細に説明する。   Hereinafter, embodiments of the present invention will be described in detail.

まず、原子数比Ｓｎ／（Ｚｎ＋Ｓｎ）が０．７５以上０．９以下となるように配合された酸化錫（ＳｎＯ2）粉末と酸化亜鉛（ＺｎＯ）粉末、および、Ｎｂ、Ｔａ、Ｗ、Ｍｏから選ばれた少なくとも１種の元素（Ｘ）で構成され、ＳｎとＺｎと添加元素（Ｘ）の総量に対する原子数比Ｘ／（Ｓｎ＋Ｚｎ＋Ｘ）が０．００１以上０．１以下となるように配合された添加元素（Ｘ）の酸化物粉末から成る原料粉末を調製し、該原料粉末を造粒して製造された造粒粉末を成形して成形体を得ると共に、焼成炉内の酸素濃度が７０体積％以上の雰囲気において７００℃から焼結温度までの昇温速度が０．４℃／ｍｉｎ以上０．８℃／ｍｉｎ以下で、かつ、焼結温度が１３００℃以上１４６０℃以下で、１０時間以上３０時間以内の条件で上記成形体を焼成することにより、相対密度が９５％以上で比抵抗が１Ω・ｃｍ以下である高Ｓｎ濃度のＳｎ−Ｚｎ−Ｏ系酸化物焼結体を製造することが可能となる。 First, tin oxide (SnO 2 ) powder and zinc oxide (ZnO) powder blended so that the atomic ratio Sn / (Zn + Sn) is 0.75 or more and 0.9 or less, and Nb, Ta, W, Mo Composed of at least one element (X) selected from the group consisting of Sn, Zn and an additive element (X) with an atomic ratio X / (Sn + Zn + X) of 0.001 or more and 0.1 or less. The raw material powder comprising the oxide powder of the additive element (X) thus prepared is prepared, the granulated powder produced by granulating the raw material powder is molded to obtain a molded body, and the oxygen concentration in the firing furnace is In an atmosphere of 70% by volume or more, the rate of temperature increase from 700 ° C. to the sintering temperature is 0.4 ° C./min to 0.8 ° C./min and the sintering temperature is 1300 ° C. to 1460 ° C. The above molded body is subjected to the above conditions within 30 hours. By forming a relative density it is possible to manufacture a Sn-Zn-O type oxide-sintered body having a high Sn concentration resistivity at 95% or less 1 [Omega · cm.

また、高密度化の効果を維持しかつ上記効果を更に高めるため、添加元素（Ｘ）と共に添加元素（Ｍ）を加えてもよい。すなわち、原子数比Ｓｎ／（Ｚｎ＋Ｓｎ）が０．７５以上０．９以下となるように配合された酸化錫（ＳｎＯ2）粉末と酸化亜鉛（ＺｎＯ）粉末、および、Ｎｂ、Ｔａ、Ｗ、Ｍｏから選ばれた少なくとも１種の元素（Ｘ）で構成され、ＳｎとＺｎと添加元素（Ｘ）の総量に対する原子数比Ｘ／（Ｓｎ＋Ｚｎ＋Ｘ）が０．００１以上０．１以下となるように配合された添加元素（Ｘ）の酸化物粉末に加え、Ｓｉ、Ｇｅ、Ｃｅ、Ｉｎ、Ｂｉ、Ｇａから選ばれた少なくとも１種の添加元素（Ｍ）で構成され、ＳｎとＺｎと添加元素（Ｍ）の総量に対する原子数比Ｍ／（Ｓｎ＋Ｚｎ＋Ｍ）として０．０００１以上０．０４以下となるように配合された添加元素（Ｍ）の酸化物粉末から成る原料粉末を調製し、該原料粉末を造粒して製造された造粒粉末を成形して成形体を得ると共に、焼成炉内の酸素濃度が７０体積％以上の雰囲気において７００℃から焼結温度までの昇温速度が０．４℃／ｍｉｎ以上０．８℃／ｍｉｎ以下で、かつ、焼結温度が１３００℃以上１４６０℃以下で、１０時間以上３０時間以内の条件で上記成形体を焼成することにより、相対密度が９８％以上で比抵抗が１Ω・ｃｍ以下である高Ｓｎ濃度のＳｎ−Ｚｎ−Ｏ系酸化物焼結体を製造することが可能となる。 Further, in order to maintain the effect of increasing the density and further enhance the above effect, the additive element (M) may be added together with the additive element (X). That is, tin oxide (SnO 2 ) powder and zinc oxide (ZnO) powder blended so that the atomic ratio Sn / (Zn + Sn) is 0.75 or more and 0.9 or less, and Nb, Ta, W, Mo Composed of at least one element (X) selected from the group consisting of Sn, Zn and an additive element (X) with an atomic ratio X / (Sn + Zn + X) of 0.001 or more and 0.1 or less. In addition to the added oxide powder of the additive element (X), it is composed of at least one additive element (M) selected from Si, Ge, Ce, In, Bi, and Ga. Sn, Zn, and the additive element (M ) Of the additive element (M) blended so that the atomic ratio M / (Sn + Zn + M) is 0.0001 or more and 0.04 or less with respect to the total amount of Granulated powder produced by granulation A molded body is obtained by molding, and the rate of temperature increase from 700 ° C. to the sintering temperature is 0.4 ° C./min to 0.8 ° C./min in an atmosphere where the oxygen concentration in the firing furnace is 70% by volume or more. And by baking the said molded object on the conditions for sintering temperature 1300 degreeC or more and 1460 degrees C or less and 10 hours or more and 30 hours or less, a relative density is 98% or more, and a specific resistance is 1 ohm * cm or less. An Sn—Zn—O-based oxide sintered body with a Sn concentration can be manufactured.

以下、本発明に係るＳｎ−Ｚｎ−Ｏ系酸化物焼結体の製造方法について説明する。   Hereinafter, the manufacturing method of the Sn—Zn—O-based oxide sintered body according to the present invention will be described.

［配合比］
（１）ＺｎとＳｎ元素
原子比数Ｓｎ／（Ｚｎ＋Ｓｎ）が０．７５以上０．９以下である高Ｓｎ濃度のＳｎ−Ｚｎ−Ｏ系酸化物焼結体の製造において、高密度が得にくい要因は、ＳｎおよびＺｎが揮発し易い点と、焼成時に生成されるＺｎ2ＳｎＯ4相も揮発し易いためである。このため、焼成温度だけではなく、昇温速度や焼結時間（保持時間）が影響する。 [Combination ratio]
(1) Zn and Sn element In manufacturing a high Sn concentration Sn—Zn—O-based oxide sintered body having an atomic ratio Sn / (Zn + Sn) of 0.75 to 0.9, it is difficult to obtain a high density. This is because Sn and Zn easily volatilize and the Zn 2 SnO 4 phase generated during firing also volatilizes easily. For this reason, not only the firing temperature but also the heating rate and the sintering time (holding time) influence.

そこで、焼成炉内の酸素濃度が７０体積％以上の雰囲気において、脱バインダー以降の昇温プロセス、すなわち、７００℃から焼結温度までの昇温速度を０．４℃／ｍｉｎ以上０．８℃／ｍｉｎ以下に設定し、かつ、焼結温度を１３００℃以上１４６０℃以下に設定すると共に、１０時間以上３０時間以内の条件で焼成することにより、緻密化されたＳｎ−Ｚｎ−Ｏ系酸化物焼結体を得ることが可能となる。   Therefore, in an atmosphere where the oxygen concentration in the firing furnace is 70% by volume or higher, the temperature rising process after debinding, that is, the temperature rising rate from 700 ° C. to the sintering temperature is 0.4 ° C./min or higher and 0.8 ° C. / Min or less, the sintering temperature is set to 1300 ° C. or higher and 1460 ° C. or lower, and the Sn—Zn—O-based oxide is densified by firing under conditions of 10 hours or longer and 30 hours or shorter. A sintered body can be obtained.

（２）添加元素
（2-1）添加元素（Ｘ）
Ｓｎを、原子数比Ｓｎ／（Ｓｎ＋Ｚｎ）として０．７５以上０．９以下の割合で含有し、焼結炉内の酸素濃度が７０体積％以上の雰囲気において、７００℃から焼結温度までの昇温速度を０．４℃／ｍｉｎ以上０．８℃／ｍｉｎ以下に設定し、かつ、焼結温度を１３００℃以上１４６０℃以下に設定すると共に、１０時間以上３０時間以内の条件で製造されたＳｎ−Ｚｎ−Ｏ系酸化物焼結体は、上述したように密度は向上するものの導電性には課題が残る。そこで、Ｎｂ、Ｔａ、ＷおよびＭｏから選ばれた少なくとも１種の添加元素（Ｘ）を添加する。添加元素（Ｘ）の添加により酸化物焼結体の高密度を維持したまま、導電性が改善される。尚、添加元素（Ｘ）は、上述したＮｂ、Ｔａ、Ｗ、Ｍｏ等５価以上の元素である。 (2) Additive element (2-1) Additive element (X)
Sn is contained at a ratio of 0.75 or more and 0.9 or less as the atomic ratio Sn / (Sn + Zn), and in an atmosphere where the oxygen concentration in the sintering furnace is 70% by volume or more, from 700 ° C. to the sintering temperature. Manufactured under conditions of not less than 10 hours and not more than 30 hours while setting the heating rate to 0.4 ° C / min to 0.8 ° C / min and the sintering temperature to 1300 ° C to 1460 ° C. Although the Sn—Zn—O-based oxide sintered body has improved density as described above, there remains a problem in conductivity. Therefore, at least one additive element (X) selected from Nb, Ta, W and Mo is added. By adding the additive element (X), the conductivity is improved while maintaining the high density of the oxide sintered body. The additive element (X) is a pentavalent or higher element such as Nb, Ta, W, or Mo described above.

また、添加元素（Ｘ）の添加量は、ＳｎとＺｎと添加元素（Ｘ）の総量に対する原子数比Ｘ／（Ｓｎ＋Ｚｎ＋Ｘ）が０．００１以上０．１以下となるように設定することを要する。原子数比Ｘ／（Ｓｎ＋Ｚｎ＋Ｘ）が０．００１未満の場合、添加量が少ないため導電性は改善されない。一方、原子数比Ｘ／（Ｓｎ＋Ｚｎ＋Ｘ）が０．１を超えた場合、Ｚｎ2ＳｎＯ4相とは別の化合物相、例えば、Ｎｂ2Ｏ5、Ｔａ2Ｏ5、ＷＯ3、ＭｏＯ3、ＺｎＴａ2Ｏ6、ＺｎＷＯ4、ＺｎＭｏＯ4等の化合物相が生成されてしまうため導電性を悪化させ、更に、相対密度を低下させてしまう場合がある。 Further, the additive amount of the additive element (X) needs to be set so that the atomic ratio X / (Sn + Zn + X) with respect to the total amount of Sn, Zn, and additive element (X) is 0.001 or more and 0.1 or less. . When the atomic ratio X / (Sn + Zn + X) is less than 0.001, the conductivity is not improved because the addition amount is small. On the other hand, when the atomic ratio X / (Sn + Zn + X) exceeds 0.1, a compound phase different from the Zn 2 SnO 4 phase, for example, Nb 2 O 5 , Ta 2 O 5 , WO 3 , MoO 3 , ZnTa Since compound phases such as 2 O 6 , ZnWO 4 , and ZnMoO 4 are generated, the conductivity may be deteriorated and the relative density may be further reduced.

（2-2）添加元素（Ｍ）
高密度化の効果を維持しかつ上記効果を更に高めるため、添加元素（Ｘ）と共に添加元素（Ｍ）を加えてもよい。添加元素（Ｘ）の添加により酸化物焼結体の導電性は改善されるが、添加元素（Ｘ）の増量に伴い相対密度が低下する傾向がある。この密度の低下傾向を抑制するため、Ｓｉ、Ｇｅ、Ｃｅ、Ｉｎ、Ｂｉ、Ｇａから選ばれた少なくとも１種の添加元素（Ｍ）を添加するとよい。尚、添加元素（Ｍ）は酸化物の形態で添加し、添加する量は、ＳｎとＺｎと添加元素（Ｍ）の総量に対する原子数比Ｍ／（Ｓｎ＋Ｚｎ＋Ｍ）が０．０００１以上０．０４以下となるように設定する。原子数比Ｍ／（Ｓｎ＋Ｚｎ＋Ｍ）が０．０００１未満の場合、添加量が少ないため密度の低下傾向を抑制する効果が高まらない。一方、原子数比Ｍ／（Ｓｎ＋Ｚｎ＋Ｍ）が０．０４を超えた場合、別の化合物相、例えば、ＳｉＯ2、ＧｅＯ2、ＣｅＯ2、Ｉｎ2Ｏ3、Ｂｉ2Ｏ3、Ｇａ2Ｏ3、ＺｎＳｉＯ4等の化合物相を生成するため導電性を悪化させることになる。 (2-2) Additive element (M)
In order to maintain the effect of increasing the density and further enhance the above effect, the additive element (M) may be added together with the additive element (X). Although the conductivity of the oxide sintered body is improved by the addition of the additive element (X), the relative density tends to decrease with the increase of the additive element (X). In order to suppress this tendency to decrease the density, at least one additive element (M) selected from Si, Ge, Ce, In, Bi, and Ga is preferably added. The additive element (M) is added in the form of an oxide, and the amount of addition is such that the atomic ratio M / (Sn + Zn + M) with respect to the total amount of Sn, Zn and additive element (M) is 0.0001 or more and 0.04 or less. Set to be. When the atomic ratio M / (Sn + Zn + M) is less than 0.0001, the amount of addition is small, so the effect of suppressing the tendency to decrease the density does not increase. On the other hand, when the atomic ratio M / (Sn + Zn + M) exceeds 0.04, another compound phase such as SiO 2 , GeO 2 , CeO 2 , In 2 O 3 , Bi 2 O 3 , Ga 2 O 3 , Since a compound phase such as ZnSiO 4 is generated, conductivity is deteriorated.

［焼成条件］
（１）炉内雰囲気
焼結炉内の酸素濃度が７０体積％以上の雰囲気において、成形体を焼成することを要する。これは、ＺｎＯ、ＳｎＯ2やＺｎ2ＳｎＯ4化合物の拡散を促進させ、焼結性を向上させると共に導電性を向上させる効果があるためである。高温域ではＳｎおよびＺｎやＺｎ2ＳｎＯ4の揮発を抑制する効果もある。これ等の効果だけではなく、更に、Ｚｎ2ＳｎＯ4とＳｎＯ2の揮発を抑制する効果もある。 [Baking conditions]
(1) Furnace atmosphere It is necessary to fire the compact in an atmosphere where the oxygen concentration in the sintering furnace is 70% by volume or more. This is because the diffusion of ZnO, SnO 2 and Zn 2 SnO 4 compound is promoted to improve the sinterability and improve the conductivity. There is also an effect of suppressing volatilization of Sn, Zn, and Zn 2 SnO 4 in a high temperature range. In addition to these effects, there is also an effect of suppressing volatilization of Zn 2 SnO 4 and SnO 2 .

一方、焼結炉内の酸素濃度が７０体積％未満の場合、ＺｎＯ、ＳｎＯ2やＺｎ2ＳｎＯ4化合物の拡散が衰退し、更に、高温域では、ＳｎおよびＺｎ成分の揮発が促進され、緻密な焼結体を作製することが困難となる。 On the other hand, when the oxygen concentration in the sintering furnace is less than 70% by volume, the diffusion of ZnO, SnO 2 and Zn 2 SnO 4 compounds declines. It becomes difficult to produce a simple sintered body.

従って、炉内雰囲気は、酸素濃度が７０体積％以上であることを要する。   Therefore, the furnace atmosphere requires an oxygen concentration of 70% by volume or more.

（２）７００℃以降の昇温速度
Ｓｎを主成分とするＳｎ−Ｚｎ−Ｏ系酸化物焼結体の高密度化には、脱バインダーが終了する７００℃から焼結温度である１３００℃から１４６０℃までの昇温速度が重要となる。脱バインダー終了後から焼結温度までは化合物であるＺｎ2ＳｎＯ4の生成や粒界拡散が行われ、この温度域の焼成時間が焼結体の高密度化に影響してくる。この温度域では必要以上に焼成に時間をかけない方が良い。これは、化合物相であるＺｎ2ＳｎＯ4相の粒界拡散を一時的に遅らせ、過度の粒界拡散を抑制する必要があるためである。 (2) Temperature rising rate after 700 ° C. For densification of Sn—Zn—O-based oxide sintered body containing Sn as a main component, from 700 ° C. at which the binder removal is completed, from 1300 ° C. which is the sintering temperature. The temperature rising rate up to 1460 ° C. is important. From the end of debinding to the sintering temperature, generation of Zn 2 SnO 4 as a compound and grain boundary diffusion are performed, and the firing time in this temperature range affects the densification of the sintered body. In this temperature range, it is better not to spend more time than necessary. This is because it is necessary to temporarily delay the grain boundary diffusion of the Zn 2 SnO 4 phase, which is a compound phase, and to suppress excessive grain boundary diffusion.

粒界拡散には拡散を開始する「初期」と、固溶や拡散する「中期」、拡散が終了し粒成長へ移行する「後期」があり、通常であれば、固溶や拡散が行われる「中期」は、固溶や拡散を行うための十分な時間を与える必要があることから、保持時間を設ける等のプロセスを施すことが有効である。   Grain boundary diffusion has an "initial stage" at which diffusion starts, an "intermediate stage" during which solid solution and diffusion occur, and a "late stage" during which diffusion ends and transitions to grain growth. In the “mid-term”, it is necessary to give a sufficient time for solid solution and diffusion, and therefore it is effective to perform a process such as setting a holding time.

しかし、Ｓｎを主成分とするＳｎ−Ｚｎ−Ｏ系酸化物焼結体の場合、Ｚｎ2ＳｎＯ4相が生成されてから、粒界拡散、粒成長、揮発に至るまでの時間が短い。例えば、１１００℃において保持時間を設けると、粒界拡散や粒成長が必要以上に進むことから、時間をかけることはかえって低密度化につながるため、余計な熱に曝される時間を与えない方が好ましい。 However, in the case of the Sn—Zn—O-based oxide sintered body containing Sn as a main component, the time from the generation of the Zn 2 SnO 4 phase to the grain boundary diffusion, grain growth and volatilization is short. For example, if a holding time is provided at 1100 ° C., grain boundary diffusion and grain growth will proceed more than necessary, so spending more time will lead to lower density, so it will not give time to be exposed to extra heat Is preferred.

このため、化合物であるＺｎ2ＳｎＯ4が生成される１０００℃域よりも低い温度から昇温速度を速める必要があり、脱バインダー以降の昇温速度は０．４℃／ｍｉｎ〜０．８℃／ｍｉｎとすることが好ましく、更に好ましくは０．５℃／ｍｉｎ〜０．７℃／ｍｉｎとすることがよい。しかし、７００℃以降の昇温速度が０．４℃／ｍｉｎ未満の場合、昇温にかける時間が長くなる分、粒界拡散を行う十分な時間が得られるためＳｎの焼結は進む反面、Ｚｎ2ＳｎＯ4相の揮発が生ずる。一方、７００℃以降の昇温速度が０．８℃／ｍｉｎを超えた場合、昇温にかける時間が短くなる分、Ｚｎ2ＳｎＯ4とＳｎの揮発を抑制できるものの、Ｓｎの粒界拡散を行う時間が短くなり、例え、焼結温度域でじっくり焼結させても高密度は困難となる。 For this reason, it is necessary to increase the rate of temperature increase from a temperature lower than the 1000 ° C. range where the compound Zn 2 SnO 4 is produced, and the rate of temperature increase after debinding is 0.4 ° C./min to 0.8 ° C. / Min, more preferably 0.5 ° C./min to 0.7 ° C./min. However, when the temperature increase rate after 700 ° C. is less than 0.4 ° C./min, the time required for the temperature increase becomes longer, so that sufficient time for performing grain boundary diffusion is obtained, but Sn sintering proceeds, Volatilization of the Zn 2 SnO 4 phase occurs. On the other hand, when the rate of temperature increase after 700 ° C. exceeds 0.8 ° C./min, although the time required for temperature increase is shortened, volatilization of Zn 2 SnO 4 and Sn can be suppressed, but Sn grain boundary diffusion is reduced. For example, even if the sintering is performed in the sintering temperature range, high density becomes difficult.

従って、脱バインダーが終了する７００℃から焼結温度である１３００℃から１４６０℃までの昇温速度は０．４℃／ｍｉｎ以上０．８℃／ｍｉｎ以下に設定することを要する。   Therefore, it is necessary to set the rate of temperature increase from 700 ° C. at which debinding is completed to the sintering temperature from 1300 ° C. to 1460 ° C. to 0.4 ° C./min to 0.8 ° C./min.

（３）焼結温度
焼結温度は１３００℃以上１４６０℃以下に設定することを要する。焼結温度が１３００℃未満の場合、温度が低過ぎてＳｎＯ2、Ｚｎ2ＳｎＯ4化合物の粒成長を十分に行うことが困難となり低密度化につながる。一方、１４６０℃を超えた場合、粒成長は進むものの、例え、酸素濃度が７０体積％以上の炉内で焼成しても、Ｚｎ2ＳｎＯ4化合物やＳｎ成分の揮発を抑制することができず、焼結体内部に大きな空孔を残してしまうことになる。 (3) Sintering temperature Sintering temperature needs to set to 1300 degreeC or more and 1460 degrees C or less. When the sintering temperature is less than 1300 ° C., the temperature is too low, and it is difficult to sufficiently grow grains of SnO 2 and Zn 2 SnO 4 compounds, leading to a reduction in density. On the other hand, when the temperature exceeds 1460 ° C., the grain growth proceeds, but even if calcination is performed in a furnace having an oxygen concentration of 70% by volume or more, volatilization of the Zn 2 SnO 4 compound and Sn component cannot be suppressed. As a result, large pores are left inside the sintered body.

（４）保持時間
焼成時における保持時間は１０時間以上３０時間以内に設定することを要する。保持時間が１０時間未満の場合、焼結が不完全なため歪や反りの大きい焼結体になり、かつ、粒界拡散が進まず、焼結が進まない。この結果、緻密な焼結体を作製することができない。一方、３０時間を超える場合、特に保持時間の効果が得られないため作業効率の悪化やコスト高の結果を招く。 (4) Holding time The holding time at the time of baking needs to set within 10 hours or more and 30 hours or less. When the holding time is less than 10 hours, the sintering is incomplete, resulting in a sintered body having large distortion and warpage, and the grain boundary diffusion does not proceed and the sintering does not proceed. As a result, a dense sintered body cannot be produced. On the other hand, when the time exceeds 30 hours, the effect of the holding time cannot be obtained, resulting in deterioration of work efficiency and high cost.

このような条件で製造された高Ｓｎ濃度のＳｎ−Ｚｎ−Ｏ系酸化物焼結体は、高密度で導電性が改善されているため、ＤＣスパッタリングでの成膜が可能となる。また、特別な製造方法を用いていないため円筒形ターゲットへの応用も容易である。   Since the Sn—Zn—O-based oxide sintered body with high Sn concentration manufactured under such conditions has high density and improved conductivity, film formation by DC sputtering becomes possible. Moreover, since a special manufacturing method is not used, application to a cylindrical target is easy.

以下、本発明の実施例について比較例を挙げて具体的に説明するが、本発明に係る技術的範囲が下記実施例の記載内容に限定されることはなく、本発明に適合する範囲で変更を加えて実施することも当然のことながら可能である。   Hereinafter, examples of the present invention will be specifically described with reference to comparative examples. However, the technical scope according to the present invention is not limited to the description of the following examples, and changes are made within the scope suitable for the present invention. Of course, it is also possible to carry out by adding.

［実施例１］
平均粒径１０μｍ以下のＳｎＯ2粉と、平均粒径１０μｍ以下のＺｎＯ粉と、添加元素Ｘとして平均粒径２０μｍ以下のＴａ2Ｏ5粉を用意した。 [Example 1]
SnO 2 powder having an average particle diameter of 10 μm or less, ZnO powder having an average particle diameter of 10 μm or less, and Ta 2 O 5 powder having an average particle diameter of 20 μm or less were prepared as the additive element X.

そして、ＳｎとＺｎの原子数比Ｓｎ／（Ｓｎ＋Ｚｎ）が０．８となり、添加元素Ｘの原子数比Ｔａ／（Ｓｎ＋Ｚｎ＋Ｔａ）が０．０１となるようにＳｎＯ2粉、ＺｎＯ粉、および、Ｔａ2Ｏ5粉を調合し、得られた原料粉末と純水、有機バインダー、分散剤を原料粉末濃度が６０質量％となるように混合タンクにて混合した。 The SnO 2 powder, ZnO powder, and Ta so that the atomic ratio Sn / (Sn + Zn) of Sn and Zn is 0.8 and the atomic ratio Ta / (Sn + Zn + Ta) of the additive element X is 0.01. 2 O 5 powder was prepared, and the obtained raw material powder, pure water, an organic binder, and a dispersant were mixed in a mixing tank so that the raw material powder concentration was 60% by mass.

次に、硬質ＺｒＯ2ボールが投入されたビーズミル装置（アシザワ・ファインテック株式会社製、ＬＭＺ型）を用いて、原料粉末の平均粒径が１μｍ以下となるまで湿式粉砕を行った後、１０時間以上混合撹拌してスラリーを得た。尚、原料粉末の平均粒径の測定にはレーザー回折式粒度分布測定装置（島津制作所製、ＳＡＬＤ-２２００）を用いた。 Next, using a bead mill apparatus (manufactured by Ashizawa Finetech Co., Ltd., LMZ type) charged with hard ZrO 2 balls, wet grinding is performed until the average particle size of the raw material powder becomes 1 μm or less, and then 10 hours. The mixture was stirred as above to obtain a slurry. In addition, a laser diffraction particle size distribution measuring device (manufactured by Shimadzu Corporation, SALD-2200) was used to measure the average particle size of the raw material powder.

次に、得られたスラリーをスプレードライヤー装置（大川原化工機株式会社製、ＯＤＬ-２０型）にて噴霧および乾燥し造粒粉を得た。   Next, the obtained slurry was sprayed and dried with a spray dryer apparatus (Okawara Chemical Co., Ltd., ODL-20 type) to obtain granulated powder.

次に、得られた造粒粉末をゴム型へ充填し、冷間静水圧プレスで２９４ＭＰａ（３ｔｏｎ／ｃｍ2）の圧力をかけて成形し、得られた直径約２５０ｍｍの成形体を常圧焼成炉に投入し、７００℃まで焼結炉内に空気（酸素濃度２１体積％）を導入した。焼成炉内の温度が７００℃になったことを確認した後、酸素濃度が８０体積％となるように酸素を導入し、昇温速度０．５℃／ｍｉｎの条件で１４００℃まで昇温させ、かつ１４００℃で１５時間保持した。 Next, the obtained granulated powder is filled into a rubber mold and molded by applying a pressure of 294 MPa (3 ton / cm 2 ) with a cold isostatic press, and the molded product having a diameter of about 250 mm is fired at normal pressure. The furnace was charged and air (oxygen concentration 21 vol%) was introduced into the sintering furnace up to 700 ° C. After confirming that the temperature in the firing furnace reached 700 ° C., oxygen was introduced so that the oxygen concentration would be 80% by volume, and the temperature was raised to 1400 ° C. at a temperature increase rate of 0.5 ° C./min. And held at 1400 ° C. for 15 hours.

保持時間が終了した後は酸素導入を止め、冷却を行い、実施例１に係るＳｎ−Ｚｎ−Ｏ系酸化物焼結体を得た。   After the holding time was completed, the introduction of oxygen was stopped and cooling was performed to obtain a Sn—Zn—O-based oxide sintered body according to Example 1.

次に、実施例１に係るＳｎ−Ｚｎ−Ｏ系酸化物焼結体を平面研削盤とグライディングセンターを用いて、直径２００ｍｍ、厚み５ｍｍへ加工を施した。   Next, the Sn—Zn—O-based oxide sintered body according to Example 1 was processed to a diameter of 200 mm and a thickness of 5 mm using a surface grinding machine and a grinding center.

この加工体の密度をアルキメデス法で測定したところ、相対密度は９９．５％であった。また、酸化物焼結体の比抵抗値を４短針法で測定したところ、０．０３Ω・ｃｍであった。   When the density of this processed body was measured by the Archimedes method, the relative density was 99.5%. Moreover, it was 0.03 ohm * cm when the specific resistance value of the oxide sintered compact was measured by the 4-short needle method.

この結果を表１に示す。   The results are shown in Table 1.

［実施例２］
上記添加元素ＸとしてＮｂ2Ｏ5粉を用い、添加元素Ｘの原子数比Ｎｂ／（Ｓｎ＋Ｚｎ＋Ｎｂ）が０．０１となるようにＳｎＯ2粉、ＺｎＯ粉、および、Ｎｂ2Ｏ5粉を調合したこと以外は実施例１と同様にして、実施例２に係るＳｎ−Ｚｎ−Ｏ系酸化物焼結体を製造した。この加工体の相対密度と比抵抗値を実施例１と同様の方法で測定したところ、相対密度は９９．３％、比抵抗値は０．０９Ω・ｃｍであった。結果を表１に示す。 [Example 2]
Nb 2 O 5 powder was used as the additive element X, and SnO 2 powder, ZnO powder, and Nb 2 O 5 powder were prepared so that the atomic ratio Nb / (Sn + Zn + Nb) of the additive element X was 0.01. A Sn—Zn—O-based oxide sintered body according to Example 2 was manufactured in the same manner as Example 1 except that. When the relative density and specific resistance value of this processed body were measured in the same manner as in Example 1, the relative density was 99.3% and the specific resistance value was 0.09 Ω · cm. The results are shown in Table 1.

［実施例３］
上記添加元素ＸとしてＷＯ3粉を用い、添加元素Ｘの原子数比Ｗ／（Ｓｎ＋Ｚｎ＋Ｗ）が０．０１となるようにＳｎＯ2粉、ＺｎＯ粉、および、ＷＯ3粉を調合したこと以外は実施例１と同様にして、実施例３に係るＳｎ−Ｚｎ−Ｏ系酸化物焼結体を製造した。この加工体の相対密度と比抵抗値を実施例１と同様の方法で測定したところ、相対密度は９９．０％、比抵抗値は０．１１Ω・ｃｍであった。結果を表１に示す。 [Example 3]
Implemented except that WO 3 powder was used as the additive element X and SnO 2 powder, ZnO powder, and WO 3 powder were prepared so that the atomic ratio W / (Sn + Zn + W) of the additive element X was 0.01. In the same manner as in Example 1, a Sn—Zn—O-based oxide sintered body according to Example 3 was manufactured. When the relative density and specific resistance value of this processed body were measured in the same manner as in Example 1, the relative density was 99.0% and the specific resistance value was 0.11 Ω · cm. The results are shown in Table 1.

［実施例４]
上記添加元素ＸとしてＭｏＯ3粉を用い、添加元素Ｘの原子数比Ｍｏ／（Ｓｎ＋Ｚｎ＋Ｍｏ）が０．０１となるようにＳｎＯ2粉、ＺｎＯ粉、および、ＭｏＯ3粉を調合したこと以外は実施例１と同様にして、実施例４に係るＳｎ−Ｚｎ−Ｏ系酸化物焼結体を製造した。この加工体の相対密度と比抵抗値を実施例１と同様の方法で測定したところ、相対密度は９８．７％、比抵抗値は０．１６Ω・ｃｍであった。結果を表１に示す。 [Example 4]
Implemented except that MoO 3 powder was used as the additive element X and SnO 2 powder, ZnO powder, and MoO 3 powder were prepared so that the atomic ratio Mo / (Sn + Zn + Mo) of the additive element X was 0.01. In the same manner as Example 1, a Sn—Zn—O-based oxide sintered body according to Example 4 was produced. When the relative density and specific resistance value of this processed body were measured in the same manner as in Example 1, the relative density was 98.7% and the specific resistance value was 0.16 Ω · cm. The results are shown in Table 1.

［実施例５]
上記添加元素ＸとしてＴａ2Ｏ5粉を用い、添加元素Ｘの原子数比Ｔａ／（Ｓｎ＋Ｚｎ＋Ｔａ）が０．１となるようにＳｎＯ2粉、ＺｎＯ粉、および、Ｔａ2Ｏ5粉を調合したこと以外は実施例１と同様にして、実施例５に係るＳｎ−Ｚｎ−Ｏ系酸化物焼結体を製造した。この加工体の相対密度と比抵抗値を実施例１と同様の方法で測定したところ、相対密度は９８．５％、比抵抗値は０．１０Ω・ｃｍであった。結果を表１に示す。 [Example 5]
Using Ta 2 O 5 powder as the additive element X, SnO 2 powder, ZnO powder, and Ta 2 O 5 powder were prepared so that the atomic ratio Ta / (Sn + Zn + Ta) of the additive element X was 0.1. A Sn—Zn—O-based oxide sintered body according to Example 5 was manufactured in the same manner as Example 1 except that. When the relative density and specific resistance value of this processed body were measured in the same manner as in Example 1, the relative density was 98.5% and the specific resistance value was 0.10 Ω · cm. The results are shown in Table 1.

［実施例６]
上記添加元素ＸとしてＴａ2Ｏ5粉を用い、添加元素Ｘの原子数比Ｔａ／（Ｓｎ＋Ｚｎ＋Ｔａ）が０．００１となるようにＳｎＯ2粉、ＺｎＯ粉、および、Ｔａ2Ｏ5粉を調合したこと以外は実施例１と同様にして、実施例６に係るＳｎ−Ｚｎ−Ｏ系酸化物焼結体を製造した。この加工体の相対密度と比抵抗値を実施例１と同様の方法で測定したところ、相対密度は９９．３％、比抵抗値は０．００９Ω・ｃｍであった。結果を表１に示す。 [Example 6]
Using Ta 2 O 5 powder as the additive element X, SnO 2 powder, ZnO powder, and Ta 2 O 5 powder were prepared so that the atomic ratio Ta / (Sn + Zn + Ta) of the additive element X was 0.001. A Sn—Zn—O-based oxide sintered body according to Example 6 was manufactured in the same manner as Example 1 except that. When the relative density and specific resistance value of this processed body were measured in the same manner as in Example 1, the relative density was 99.3% and the specific resistance value was 0.009 Ω · cm. The results are shown in Table 1.

［実施例７］
ＳｎとＺｎの原子数比Ｓｎ／（Ｓｎ＋Ｚｎ）が０．９となり、添加元素Ｘの原子数比Ｔａ／（Ｓｎ＋Ｚｎ＋Ｔａ）が０．０５となるようにＳｎＯ2粉、ＺｎＯ粉、および、Ｔａ2Ｏ5粉を調合した以外は実施例１と同様にして、実施例７に係るＳｎ−Ｚｎ−Ｏ系酸化物焼結体を製造した。この加工体の相対密度と比抵抗値を実施例１と同様の方法で測定したところ、相対密度は９９．０％、比抵抗値は０．７Ω・ｃｍであった。結果を表１に示す。 [Example 7]
SnO 2 powder, ZnO powder, and Ta 2 O so that the atomic ratio Sn / (Sn + Zn) of Sn and Zn is 0.9 and the atomic ratio Ta / (Sn + Zn + Ta) of the additive element X is 0.05. A Sn—Zn—O-based oxide sintered body according to Example 7 was manufactured in the same manner as Example 1 except that 5 powders were prepared. When the relative density and specific resistance value of this processed body were measured in the same manner as in Example 1, the relative density was 99.0% and the specific resistance value was 0.7 Ω · cm. The results are shown in Table 1.

［実施例８］
ＳｎとＺｎの原子数比Ｓｎ／（Ｓｎ＋Ｚｎ）が０．７５となり、添加元素Ｘの原子数比Ｔａ／（Ｓｎ＋Ｚｎ＋Ｔａ）が０．０５となるようにＳｎＯ2粉、ＺｎＯ粉、および、Ｔａ2Ｏ5粉を調合した以外は実施例１と同様にして、実施例８に係るＳｎ−Ｚｎ−Ｏ系酸化物焼結体を製造した。この加工体の相対密度と比抵抗値を実施例１と同様の方法で測定したところ、相対密度は９８．５％、比抵抗値は０．０２Ω・ｃｍであった。結果を表１に示す。 [Example 8]
SnO 2 powder, ZnO powder, and Ta 2 O so that the atomic ratio Sn / (Sn + Zn) of Sn and Zn is 0.75 and the atomic ratio Ta / (Sn + Zn + Ta) of the additive element X is 0.05. A Sn—Zn—O-based oxide sintered body according to Example 8 was produced in the same manner as Example 1 except that 5 powders were prepared. When the relative density and specific resistance value of this processed body were measured in the same manner as in Example 1, the relative density was 98.5% and the specific resistance value was 0.02 Ω · cm. The results are shown in Table 1.

［実施例９］
７００℃から焼結温度までの昇温速度を０．４℃／ｍｉｎとした以外は実施例１と同様にして、実施例９に係るＳｎ−Ｚｎ−Ｏ系酸化物焼結体を製造した。この加工体の相対密度と比抵抗値を実施例１と同様の方法で測定したところ、相対密度は９７．０％、比抵抗値は０．３５Ω・ｃｍであった。結果を表１に示す。 [Example 9]
A Sn—Zn—O-based oxide sintered body according to Example 9 was manufactured in the same manner as in Example 1 except that the rate of temperature increase from 700 ° C. to the sintering temperature was 0.4 ° C./min. When the relative density and specific resistance value of this processed body were measured in the same manner as in Example 1, the relative density was 97.0% and the specific resistance value was 0.35 Ω · cm. The results are shown in Table 1.

［実施例１０］
７００℃から焼結温度までの昇温速度を０．８℃／ｍｉｎとした以外は実施例１と同様にして、実施例１０に係るＳｎ−Ｚｎ−Ｏ系酸化物焼結体を製造した。この加工体の相対密度と比抵抗値を実施例１と同様の方法で測定したところ、相対密度は９５．９％、比抵抗値は０．６２Ω・ｃｍであった。結果を表１に示す。 [Example 10]
A Sn—Zn—O-based oxide sintered body according to Example 10 was manufactured in the same manner as in Example 1 except that the rate of temperature increase from 700 ° C. to the sintering temperature was 0.8 ° C./min. When the relative density and specific resistance value of this processed body were measured in the same manner as in Example 1, the relative density was 95.9% and the specific resistance value was 0.62 Ω · cm. The results are shown in Table 1.

［実施例１１］
炉内の酸素濃度を７０体積％とした以外は実施例１と同様にして、実施例１１に係るＳｎ−Ｚｎ−Ｏ系酸化物焼結体を製造した。この加工体の相対密度と比抵抗値を実施例１と同様の方法で測定したところ、相対密度は９５．８％、比抵抗値は０．８３Ω・ｃｍであった。結果を表１に示す。 [Example 11]
A Sn—Zn—O-based oxide sintered body according to Example 11 was manufactured in the same manner as Example 1 except that the oxygen concentration in the furnace was set to 70% by volume. When the relative density and specific resistance value of this processed body were measured in the same manner as in Example 1, the relative density was 95.8% and the specific resistance value was 0.83 Ω · cm. The results are shown in Table 1.

［実施例１２］
炉内の酸素濃度を９９体積％とした以外は実施例１と同様にして、実施例１２に係るＳｎ−Ｚｎ−Ｏ系酸化物焼結体を製造した。この加工体の相対密度と比抵抗値を実施例１と同様の方法で測定したところ、相対密度は９９．５％、比抵抗値は０．０３Ω・ｃｍであった。結果を表１に示す。 [Example 12]
A Sn—Zn—O-based oxide sintered body according to Example 12 was manufactured in the same manner as in Example 1 except that the oxygen concentration in the furnace was 99% by volume. When the relative density and specific resistance value of this processed body were measured in the same manner as in Example 1, the relative density was 99.5% and the specific resistance value was 0.03 Ω · cm. The results are shown in Table 1.

［実施例１３］
焼結温度を１３００℃とした以外は実施例１と同様にして、実施例１３に係るＳｎ−Ｚｎ−Ｏ系酸化物焼結体を製造した。この加工体の相対密度と比抵抗値を実施例１と同様の方法で測定したところ、相対密度は９５．４％、比抵抗値は０．３４Ω・ｃｍであった。結果を表１に示す。 [Example 13]
A Sn—Zn—O-based oxide sintered body according to Example 13 was manufactured in the same manner as in Example 1 except that the sintering temperature was 1300 ° C. When the relative density and specific resistance value of this processed body were measured in the same manner as in Example 1, the relative density was 95.4% and the specific resistance value was 0.34 Ω · cm. The results are shown in Table 1.

［実施例１４］
焼結温度を１４６０℃とした以外は実施例１と同様にして、実施例１４に係るＳｎ−Ｚｎ−Ｏ系酸化物焼結体を製造した。この加工体の相対密度と比抵抗値を実施例１と同様の方法で測定したところ、相対密度は９７．２％、比抵抗値は０．２２Ω・ｃｍであった。結果を表１に示す。 [Example 14]
A Sn—Zn—O-based oxide sintered body according to Example 14 was manufactured in the same manner as in Example 1 except that the sintering temperature was 1460 ° C. When the relative density and specific resistance value of this processed body were measured in the same manner as in Example 1, the relative density was 97.2% and the specific resistance value was 0.22 Ω · cm. The results are shown in Table 1.

［実施例１５］
焼結温度での保持時間を１０時間とした以外は実施例１と同様にして、実施例１５に係るＳｎ−Ｚｎ−Ｏ系酸化物焼結体を製造した。この加工体の相対密度と比抵抗値を実施例１と同様の方法で測定したところ、相対密度は９６．０％、比抵抗値は０．１８Ω・ｃｍであった。結果を表１に示す。 [Example 15]
A Sn—Zn—O-based oxide sintered body according to Example 15 was manufactured in the same manner as Example 1 except that the holding time at the sintering temperature was 10 hours. When the relative density and specific resistance value of this processed body were measured in the same manner as in Example 1, the relative density was 96.0% and the specific resistance value was 0.18 Ω · cm. The results are shown in Table 1.

［実施例１６］
焼結温度での保持時間を３０時間とした以外は実施例１と同様にして、実施例１６に係るＳｎ−Ｚｎ−Ｏ系酸化物焼結体を製造した。この加工体の相対密度と比抵抗値を実施例１と同様の方法で測定したところ、相対密度は９９．５％、比抵抗値は０．０３Ω・ｃｍであった。結果を表１に示す。 [Example 16]
A Sn—Zn—O-based oxide sintered body according to Example 16 was manufactured in the same manner as in Example 1 except that the holding time at the sintering temperature was 30 hours. When the relative density and specific resistance value of this processed body were measured in the same manner as in Example 1, the relative density was 99.5% and the specific resistance value was 0.03 Ω · cm. The results are shown in Table 1.

［比較例１］
上記添加元素ＸとしてＴａ2Ｏ5粉を用い、添加元素Ｘの原子数比Ｔａ／（Ｓｎ＋Ｚｎ＋Ｔａ）が０．０００１となるようにＳｎＯ2粉、ＺｎＯ粉、および、Ｔａ2Ｏ5粉を調合したこと以外は実施例１と同様にして、比較例１に係るＳｎ−Ｚｎ−Ｏ系酸化物焼結体を製造した。この加工体の相対密度と比抵抗値を実施例１と同様の方法で測定したところ、相対密度は９９．４％、比抵抗値は１９０Ω・ｃｍであり、相対密度９５％以上の特性は達成できたが、比抵抗値１Ω・ｃｍ以下の特性は達成できないことが確認された。結果を表１に示す。 [Comparative Example 1]
Using Ta 2 O 5 powder as the additive element X, SnO 2 powder, ZnO powder, and Ta 2 O 5 powder were prepared so that the atomic ratio Ta / (Sn + Zn + Ta) of the additive element X was 0.0001. Except for this, a Sn—Zn—O-based oxide sintered body according to Comparative Example 1 was produced in the same manner as in Example 1. When the relative density and specific resistance value of this processed body were measured in the same manner as in Example 1, the relative density was 99.4%, the specific resistance value was 190 Ω · cm, and the characteristics with a relative density of 95% or more were achieved. Although it was possible, it was confirmed that characteristics with a specific resistance value of 1 Ω · cm or less could not be achieved. The results are shown in Table 1.

［比較例２］
上記添加元素ＸとしてＴａ2Ｏ5粉を用い、添加元素Ｘの原子数比Ｔａ／（Ｓｎ＋Ｚｎ＋Ｔａ）が０．００００９となるようにＳｎＯ2粉、ＺｎＯ粉、および、Ｔａ2Ｏ5粉を調合したこと以外は実施例１と同様にして、比較例２に係るＳｎ−Ｚｎ−Ｏ系酸化物焼結体を製造した。この加工体の相対密度と比抵抗値を実施例１と同様の方法で測定したところ、相対密度は９９．３％、比抵抗値は１６００Ω・ｃｍであり、相対密度９５％以上の特性は達成できたが、比抵抗値１Ω・ｃｍ以下の特性は達成できないことが確認された。結果を表１に示す。 [Comparative Example 2]
Using Ta 2 O 5 powder as the additive element X, SnO 2 powder, ZnO powder, and Ta 2 O 5 powder were prepared so that the atomic ratio Ta / (Sn + Zn + Ta) of the additive element X was 0.00009. Except for this, a Sn—Zn—O-based oxide sintered body according to Comparative Example 2 was produced in the same manner as in Example 1. When the relative density and specific resistance value of this processed body were measured in the same manner as in Example 1, the relative density was 99.3%, the specific resistance value was 1600 Ω · cm, and the characteristics with a relative density of 95% or more were achieved. Although it was possible, it was confirmed that characteristics with a specific resistance value of 1 Ω · cm or less could not be achieved. The results are shown in Table 1.

［比較例３］
上記添加元素Ｘを配合していない原料粉末が適用された以外は実施例１と同様にして、比較例３に係るＳｎ−Ｚｎ−Ｏ系酸化物焼結体を製造した。この加工体の相対密度と比抵抗値を実施例１と同様の方法で測定したところ、相対密度は９９．３％、比抵抗値は１０００Ω・ｃｍであり、相対密度９５％以上の特性は達成できたが、比抵抗値１Ω・ｃｍ以下の特性は達成できないことが確認された。結果を表１に示す。 [Comparative Example 3]
A Sn—Zn—O-based oxide sintered body according to Comparative Example 3 was produced in the same manner as in Example 1 except that the raw material powder not containing the additive element X was applied. When the relative density and specific resistance value of this processed body were measured in the same manner as in Example 1, the relative density was 99.3%, the specific resistance value was 1000 Ω · cm, and the characteristics with a relative density of 95% or more were achieved. Although it was possible, it was confirmed that characteristics with a specific resistance value of 1 Ω · cm or less could not be achieved. The results are shown in Table 1.

［比較例４］
上記添加元素Ｘを配合していない原料粉末が適用され、かつ、７００℃以降の昇温速度を０．４℃／ｍｉｎとしたこと以外は実施例１と同様にして、比較例４に係るＳｎ−Ｚｎ−Ｏ系酸化物焼結体を製造した。この加工体の相対密度と比抵抗値を実施例１と同様の方法で測定したところ、相対密度は９８．０％、比抵抗値は１１００Ω・ｃｍであり、相対密度９５％以上の特性は達成できたが、比抵抗値１Ω・ｃｍ以下の特性は達成できないことが確認された。結果を表１に示す。 [Comparative Example 4]
Sn according to Comparative Example 4 was applied in the same manner as in Example 1 except that the raw material powder not containing the additive element X was applied and the rate of temperature increase after 700 ° C. was 0.4 ° C./min. A —Zn—O-based oxide sintered body was produced. When the relative density and specific resistance value of this processed body were measured in the same manner as in Example 1, the relative density was 98.0%, the specific resistance value was 1100 Ω · cm, and the characteristics with a relative density of 95% or more were achieved. Although it was possible, it was confirmed that characteristics with a specific resistance value of 1 Ω · cm or less could not be achieved. The results are shown in Table 1.

［比較例５］
上記添加元素Ｘを配合していない原料粉末が適用され、かつ、７００℃以降の昇温速度を０．８℃／ｍｉｎとしたこと以外は実施例１と同様にして、比較例５に係るＳｎ−Ｚｎ−Ｏ系酸化物焼結体を製造した。この加工体の相対密度と比抵抗値を実施例１と同様の方法で測定したところ、相対密度は９８．９％、比抵抗値は１１６０Ω・ｃｍであり、相対密度９５％以上の特性は達成できたが、比抵抗値１Ω・ｃｍ以下の特性は達成できないことが確認された。結果を表１に示す。 [Comparative Example 5]
Sn according to Comparative Example 5 was applied in the same manner as in Example 1 except that the raw material powder not containing the additive element X was applied and the rate of temperature increase after 700 ° C. was 0.8 ° C./min. A —Zn—O-based oxide sintered body was produced. When the relative density and specific resistance value of this processed body were measured in the same manner as in Example 1, the relative density was 98.9%, the specific resistance value was 1160 Ω · cm, and the characteristics with a relative density of 95% or more were achieved. Although it was possible, it was confirmed that characteristics with a specific resistance value of 1 Ω · cm or less could not be achieved. The results are shown in Table 1.

［比較例６］
上記添加元素Ｘを配合していない原料粉末が適用され、かつ、酸素濃度を９９．０体積％としたこと以外は実施例１と同様にして、比較例６に係るＳｎ−Ｚｎ−Ｏ系酸化物焼結体を製造した。この加工体の相対密度と比抵抗値を実施例１と同様の方法で測定したところ、相対密度は９８．９％、比抵抗値は１１６０Ω・ｃｍであり、相対密度９５％以上の特性は達成できたが、比抵抗値１Ω・ｃｍ以下の特性は達成できないことが確認された。結果を表１に示す。 [Comparative Example 6]
The Sn—Zn—O-based oxidation according to Comparative Example 6 was performed in the same manner as in Example 1 except that the raw material powder not containing the additive element X was applied and the oxygen concentration was 99.0% by volume. A sintered product was produced. When the relative density and specific resistance value of this processed body were measured in the same manner as in Example 1, the relative density was 98.9%, the specific resistance value was 1160 Ω · cm, and the characteristics with a relative density of 95% or more were achieved. Although it was possible, it was confirmed that characteristics with a specific resistance value of 1 Ω · cm or less could not be achieved. The results are shown in Table 1.

［比較例７］
上記添加元素Ｘを配合していない原料粉末が適用され、かつ、焼結温度を１３００℃としたこと以外は実施例１と同様にして、比較例７に係るＳｎ−Ｚｎ−Ｏ系酸化物焼結体を製造した。この加工体の相対密度と比抵抗値を実施例１と同様の方法で測定したところ、相対密度は９８．１％、比抵抗値は１５００Ω・ｃｍであり、相対密度９５％以上の特性は達成できたが、比抵抗値１Ω・ｃｍ以下の特性は達成できないことが確認された。結果を表１に示す。 [Comparative Example 7]
The Sn—Zn—O-based oxide firing according to Comparative Example 7 was performed in the same manner as in Example 1 except that the raw material powder not containing the additive element X was applied and the sintering temperature was 1300 ° C. A ligation was produced. When the relative density and specific resistance value of this processed body were measured in the same manner as in Example 1, the relative density was 98.1%, the specific resistance value was 1500 Ω · cm, and the characteristics with a relative density of 95% or more were achieved. Although it was possible, it was confirmed that characteristics with a specific resistance value of 1 Ω · cm or less could not be achieved. The results are shown in Table 1.

［比較例８］
上記添加元素Ｘを配合していない原料粉末が適用され、かつ、焼結温度を１４６０℃としたこと以外は実施例１と同様にして、比較例８に係るＳｎ−Ｚｎ−Ｏ系酸化物焼結体を製造した。この加工体の相対密度と比抵抗値を実施例１と同様の方法で測定したところ、相対密度は９９．２％、比抵抗値は１２００Ω・ｃｍであり、相対密度９５％以上の特性は達成できたが、比抵抗値１Ω・ｃｍ以下の特性は達成できないことが確認された。結果を表１に示す。 [Comparative Example 8]
The Sn—Zn—O-based oxide firing according to Comparative Example 8 was performed in the same manner as in Example 1 except that the raw material powder not containing the additive element X was applied and the sintering temperature was 1460 ° C. A ligation was produced. When the relative density and specific resistance value of this processed body were measured in the same manner as in Example 1, the relative density was 99.2%, the specific resistance value was 1200 Ω · cm, and the characteristics with a relative density of 95% or more were achieved. Although it was possible, it was confirmed that characteristics with a specific resistance value of 1 Ω · cm or less could not be achieved. The results are shown in Table 1.

［比較例９］
ＳｎとＺｎの原子数比Ｓｎ／（Ｓｎ＋Ｚｎ）が０．７となる割合でＳｎＯ2粉とＺｎＯ粉を調合し、上記添加元素Ｘを配合していない原料粉末が適用された以外は実施例１と同様にして、比較例９に係るＳｎ−Ｚｎ−Ｏ系酸化物焼結体を製造した。この加工体の相対密度と比抵抗値を実施例１と同様の方法で測定したところ、相対密度は９４．５％、比抵抗値は１００００Ω・ｃｍであり、相対密度９５％以上かつ比抵抗値１Ω・ｃｍ以下の特性は達成できないことが確認された。結果を表１に示す。 [Comparative Example 9]
Example 1 except that SnO 2 powder and ZnO powder were prepared at a ratio of Sn / Zn atomic ratio Sn / (Sn + Zn) of 0.7, and the raw material powder not containing the additive element X was applied. In the same manner, a Sn—Zn—O-based oxide sintered body according to Comparative Example 9 was produced. When the relative density and specific resistance value of this processed body were measured by the same method as in Example 1, the relative density was 94.5%, the specific resistance value was 10,000 Ω · cm, the relative density was 95% or more, and the specific resistance value. It was confirmed that characteristics of 1 Ω · cm or less could not be achieved. The results are shown in Table 1.

［比較例１０］
ＳｎとＺｎの原子数比Ｓｎ／（Ｓｎ＋Ｚｎ）が０．９５となる割合でＳｎＯ2粉とＺｎＯ粉を調合し、上記添加元素Ｘを配合していない原料粉末が適用された以外は実施例１と同様にして、比較例１０に係るＳｎ−Ｚｎ−Ｏ系酸化物焼結体を製造した。この加工体の相対密度と比抵抗値を実施例１と同様の方法で測定したところ、相対密度は８８．３％、比抵抗値は１００００Ω・ｃｍであり、相対密度９５％以上かつ比抵抗値１Ω・ｃｍ以下の特性は達成できないことが確認された。結果を表１に示す。 [Comparative Example 10]
Example 1 except that SnO 2 powder and ZnO powder were prepared at a ratio where the atomic ratio Sn / (Sn + Zn) of Sn and Zn was 0.95, and the raw material powder not containing the additive element X was applied. In the same manner, a Sn—Zn—O-based oxide sintered body according to Comparative Example 10 was produced. When the relative density and specific resistance value of this processed body were measured in the same manner as in Example 1, the relative density was 88.3%, the specific resistance value was 10,000 Ω · cm, the relative density was 95% or more, and the specific resistance value. It was confirmed that characteristics of 1 Ω · cm or less could not be achieved. The results are shown in Table 1.

［比較例１１］
上記添加元素Ｘを配合していない原料粉末が適用され、かつ、７００℃以降の昇温速度を０．３８℃／ｍｉｎとしたこと以外は実施例１と同様にして、比較例１１に係るＳｎ−Ｚｎ−Ｏ系酸化物焼結体を製造した。この加工体の相対密度と比抵抗値を実施例１と同様の方法で測定したところ、相対密度は９３．０％、比抵抗値は１４００Ω・ｃｍであり、相対密度９５％以上かつ比抵抗値１Ω・ｃｍ以下の特性は達成できないことが確認された。結果を表１に示す。 [Comparative Example 11]
Sn according to Comparative Example 11 was applied in the same manner as in Example 1 except that the raw material powder not containing the additive element X was applied and the rate of temperature increase after 700 ° C. was 0.38 ° C./min. A —Zn—O-based oxide sintered body was produced. When the relative density and specific resistance value of this processed body were measured in the same manner as in Example 1, the relative density was 93.0%, the specific resistance value was 1400 Ω · cm, the relative density was 95% or more, and the specific resistance value. It was confirmed that characteristics of 1 Ω · cm or less could not be achieved. The results are shown in Table 1.

［比較例１２］
上記添加元素Ｘを配合していない原料粉末が適用され、かつ、７００℃以降の昇温速度を１．０℃／ｍｉｎとしたこと以外は実施例１と同様にして、比較例１２に係るＳｎ−Ｚｎ−Ｏ系酸化物焼結体を製造した。この加工体の相対密度と比抵抗値を実施例１と同様の方法で測定したところ、相対密度は９３．８％、比抵抗値は１５００Ω・ｃｍであり、相対密度９５％以上かつ比抵抗値１Ω・ｃｍ以下の特性は達成できないことが確認された。結果を表１に示す。 [Comparative Example 12]
Sn according to Comparative Example 12 was applied in the same manner as in Example 1 except that the raw material powder not containing the additive element X was applied and the rate of temperature increase after 700 ° C. was 1.0 ° C./min. A —Zn—O-based oxide sintered body was produced. When the relative density and specific resistance value of this processed body were measured in the same manner as in Example 1, the relative density was 93.8%, the specific resistance value was 1500 Ω · cm, the relative density was 95% or more, and the specific resistance value. It was confirmed that characteristics of 1 Ω · cm or less could not be achieved. The results are shown in Table 1.

［比較例１３］
上記添加元素Ｘを配合していない原料粉末が適用され、かつ、酸素濃度を６８体積％としたこと以外は実施例１と同様にして、比較例１３に係るＳｎ−Ｚｎ−Ｏ系酸化物焼結体を製造した。この加工体の相対密度と比抵抗値を実施例１と同様の方法で測定したところ、相対密度は９０．１％、比抵抗値は１００００Ω・ｃｍであり、相対密度９５％以上かつ比抵抗値１Ω・ｃｍ以下の特性は達成できないことが確認された。結果を表１に示す。 [Comparative Example 13]
The Sn—Zn—O-based oxide firing according to Comparative Example 13 was performed in the same manner as in Example 1 except that the raw material powder not containing the additive element X was applied and the oxygen concentration was 68% by volume. A ligation was produced. When the relative density and specific resistance value of this processed body were measured by the same method as in Example 1, the relative density was 90.1%, the specific resistance value was 10,000 Ω · cm, the relative density was 95% or more, and the specific resistance value. It was confirmed that characteristics of 1 Ω · cm or less could not be achieved. The results are shown in Table 1.

［比較例１４］
上記添加元素Ｘを配合していない原料粉末が適用され、かつ、焼結温度を１２５０℃としたこと以外は実施例１と同様にして、比較例１４に係るＳｎ−Ｚｎ−Ｏ系酸化物焼結体を製造した。この加工体の相対密度と比抵抗値を実施例１と同様の方法で測定したところ、相対密度は８５．０％、比抵抗値は１００００Ω・ｃｍであり、相対密度９５％以上かつ比抵抗値１Ω・ｃｍ以下の特性は達成できないことが確認された。結果を表１に示す。 [Comparative Example 14]
The Sn—Zn—O-based oxide firing according to Comparative Example 14 was performed in the same manner as in Example 1 except that the raw material powder not containing the additive element X was applied and the sintering temperature was 1250 ° C. A ligation was produced. When the relative density and specific resistance value of this processed body were measured in the same manner as in Example 1, the relative density was 85.0%, the specific resistance value was 10,000 Ω · cm, the relative density was 95% or more, and the specific resistance value. It was confirmed that characteristics of 1 Ω · cm or less could not be achieved. The results are shown in Table 1.

［比較例１５］
上記添加元素Ｘを配合していない原料粉末が適用され、かつ、焼結温度を１４９０℃としたこと以外は実施例１と同様にして、比較例１５に係るＳｎ−Ｚｎ−Ｏ系酸化物焼結体を製造した。この加工体の相対密度と比抵抗値を実施例１と同様の方法で測定したところ、相対密度は９４．１％、比抵抗値は１８００Ω・ｃｍであり、相対密度９５％以上かつ比抵抗値１Ω・ｃｍ以下の特性は達成できないことが確認された。結果を表１に示す。 [Comparative Example 15]
The Sn—Zn—O-based oxide firing according to Comparative Example 15 was performed in the same manner as in Example 1 except that the raw material powder not containing the additive element X was applied and the sintering temperature was 1490 ° C. A ligation was produced. When the relative density and specific resistance value of this processed body were measured in the same manner as in Example 1, the relative density was 94.1%, the specific resistance value was 1800 Ω · cm, the relative density was 95% or more, and the specific resistance value. It was confirmed that characteristics of 1 Ω · cm or less could not be achieved. The results are shown in Table 1.

Figure 2017160105
Figure 2017160105

［実施例１７］
添加元素Ｍとして、平均粒径が１μｍ以下のゲルマニウムの酸化物粉末を、添加元素Ｍの原子比Ｇｅ／（Ｓｎ＋Ｚｎ＋Ｇｅ）が０．０１となるようにした以外は、実施例５と同様にして、実施例１７に係るＳｎ−Ｚｎ−Ｏ系酸化物焼結体を製造した。 [Example 17]
As the additive element M, a germanium oxide powder having an average particle size of 1 μm or less was prepared in the same manner as in Example 5 except that the atomic ratio Ge / (Sn + Zn + Ge) of the additive element M was 0.01. A Sn—Zn—O-based oxide sintered body according to Example 17 was manufactured.

この加工体の密度をアルキメデスで測定したところ、相対密度は９９．３％（実施例５の相対密度は９８．５％）であり、酸化物焼結体の比抵抗は０．０７Ω・ｃｍ（実施例５の比抵抗は０．１Ω・ｃｍ）であり、実施例５に較べ相対密度と比抵抗がより改善されていることが確認された。   When the density of this processed body was measured with Archimedes, the relative density was 99.3% (the relative density of Example 5 was 98.5%), and the specific resistance of the oxide sintered body was 0.07 Ω · cm ( The specific resistance of Example 5 was 0.1 Ω · cm), and it was confirmed that the relative density and specific resistance were further improved as compared with Example 5.

［実施例１８〜２２］
添加元素Ｍをセリウム（実施例１８）、ケイ素（実施例１９）、ビスマス（実施例２０）、インジウム（実施例２１）、ガリウム（実施例２２）とした以外は、実施例１７と同様にして、実施例１８〜２２に係るＳｎ−Ｚｎ−Ｏ系酸化物焼結体を製造した。 [Examples 18 to 22]
Example 17 was repeated except that the additive element M was cerium (Example 18), silicon (Example 19), bismuth (Example 20), indium (Example 21), and gallium (Example 22). Sn-Zn-O-based oxide sintered bodies according to Examples 18 to 22 were manufactured.

これら加工体の密度をアルキメデスで測定した。   The density of these processed bodies was measured with Archimedes.

各相対密度と比抵抗は、それぞれ、９９，２％、０．０８Ω・ｃｍ（実施例１８）、９９．２％、０．２Ω・ｃｍ（実施例１９）、９９．４％、０．６Ω・ｃｍ（実施例２０）、９９．０％、０．３Ω・ｃｍ（実施例２１）、９９．１％、０．４Ω・ｃｍ（実施例２２）であり、実施例５（相対密度が９８．５％）に較べ相対密度がより改善されていることが確認された。   The relative densities and specific resistances are 99,2%, 0.08 Ω · cm (Example 18), 99.2%, 0.2 Ω · cm (Example 19), 99.4%, 0.6Ω, respectively. Cm (Example 20), 99.0%, 0.3 Ω · cm (Example 21), 99.1%, 0.4 Ω · cm (Example 22), and Example 5 (relative density 98 It was confirmed that the relative density was further improved compared to .5%).

［実施例２３］
添加元素Ｍの原子比Ｇｅ／（Ｓｎ＋Ｚｎ＋Ｇｅ）が０．０００１となるようにした以外は、実施例１７と同様にして、実施例２３に係るＳｎ−Ｚｎ−Ｏ系酸化物焼結体を製造した。 [Example 23]
A Sn—Zn—O-based oxide sintered body according to Example 23 was manufactured in the same manner as in Example 17, except that the atomic ratio Ge / (Sn + Zn + Ge) of the additive element M was 0.0001. .

この加工体の密度をアルキメデスで測定したところ、相対密度は９８．９％、酸化物焼結体の比抵抗は０．０９Ω・ｃｍであり、実施例５（相対密度が９８．５％、比抵抗が０．１Ω・ｃｍ）に較べ相対密度と比抵抗がより改善されていることが確認された。   When the density of this processed body was measured by Archimedes, the relative density was 98.9%, the specific resistance of the oxide sintered body was 0.09 Ω · cm, and Example 5 (relative density was 98.5%, specific ratio). It was confirmed that the relative density and the specific resistance were further improved compared to the resistance of 0.1 Ω · cm).

［実施例２４］
添加元素Ｍの原子比Ｇｅ／（Ｓｎ＋Ｚｎ＋Ｇｅ）が０．０４となるようにした以外は、実施例１７と同様にして、実施例２４に係るＳｎ−Ｚｎ−Ｏ系酸化物焼結体を製造した。 [Example 24]
A Sn—Zn—O-based oxide sintered body according to Example 24 was manufactured in the same manner as Example 17 except that the atomic ratio Ge / (Sn + Zn + Ge) of the additive element M was 0.04. .

この加工体の密度をアルキメデスで測定したところ、相対密度は９９．４％、酸化物焼結体の比抵抗は０．１４Ω・ｃｍであり、実施例５（相対密度が９８．５％）に較べ相対密度がより改善されていることが確認された。   When the density of this processed body was measured by Archimedes, the relative density was 99.4%, the specific resistance of the oxide sintered body was 0.14 Ω · cm, and Example 5 (relative density was 98.5%). It was confirmed that the relative density was further improved.

［実施例２５］
添加元素Ｍとして、平均粒径が１μｍ以下のゲルマニウムの酸化物粉末を、添加元素Ｍの原子比Ｇｅ／（Ｓｎ＋Ｚｎ＋Ｇｅ）が０．０１となるようにした以外は、実施例１と同様にして、実施例２５に係るＳｎ−Ｚｎ−Ｏ系酸化物焼結体を製造した。 [Example 25]
As the additive element M, germanium oxide powder having an average particle size of 1 μm or less was made the same as in Example 1 except that the atomic ratio Ge / (Sn + Zn + Ge) of the additive element M was 0.01. A Sn—Zn—O-based oxide sintered body according to Example 25 was manufactured.

この加工体の密度をアルキメデスで測定したところ、相対密度は９９．５％であり、酸化物焼結体の比抵抗は０．０６Ω・ｃｍであった。   When the density of this processed body was measured by Archimedes, the relative density was 99.5%, and the specific resistance of the oxide sintered body was 0.06 Ω · cm.

Figure 2017160105
Figure 2017160105

本発明に係るＳｎ−Ｚｎ−Ｏ系酸化物焼結体は、機械的強度に加えて高密度かつ低抵抗といった特性を備えているため、太陽電池やタッチパネル等の透明電極を形成するためのスパッタリングターゲットとして利用される産業上の利用可能性を有している。   Since the Sn—Zn—O-based oxide sintered body according to the present invention has characteristics such as high density and low resistance in addition to mechanical strength, sputtering for forming transparent electrodes such as solar cells and touch panels. It has industrial applicability used as a target.

Claims (4)

Ｓｎを主成分とするＳｎ−Ｚｎ−Ｏ系酸化物焼結体において、
Ｓｎを、原子数比Ｓｎ／（Ｚｎ＋Ｓｎ）として０．７５以上０．９以下の割合で含有し、かつ、Ｎｂ、Ｔａ、Ｗ、Ｍｏから選ばれた少なくとも１種の添加元素（Ｘ）を、ＳｎとＺｎと添加元素（Ｘ）の総量に対する原子数比Ｘ／（Ｓｎ＋Ｚｎ＋Ｘ）として０．００１以上０．１以下の割合で含有すると共に、相対密度が９５％以上かつ比抵抗が１Ω・ｃｍ以下であることを特徴とするＳｎ−Ｚｎ−Ｏ系酸化物焼結体。 In the Sn—Zn—O-based oxide sintered body containing Sn as a main component,
Sn is contained at a ratio of 0.75 to 0.9 in terms of atomic ratio Sn / (Zn + Sn), and at least one additive element (X) selected from Nb, Ta, W, and Mo is added. The atomic ratio X / (Sn + Zn + X) with respect to the total amount of Sn, Zn and additive element (X) is contained in a ratio of 0.001 or more and 0.1 or less, and the relative density is 95% or more and the specific resistance is 1 Ω · cm or less. A Sn—Zn—O-based oxide sintered body characterized by being: Ｓｉ、Ｇｅ、Ｃｅ、Ｉｎ、Ｂｉ、Ｇａから選ばれた少なくとも１種の添加元素（Ｍ）を、ＳｎとＺｎと添加元素（Ｍ）の総量に対する原子数比Ｍ／（Ｓｎ＋Ｚｎ＋Ｍ）として０．０００１以上０．０４以下の割合で含有し、酸化物焼結体の相対密度が９８％以上であることを特徴とする請求項１に記載のＳｎ−Ｚｎ−Ｏ系酸化物焼結体。   At least one additive element (M) selected from Si, Ge, Ce, In, Bi, and Ga is used as an atomic ratio M / (Sn + Zn + M) with respect to the total amount of Sn, Zn, and additive element (M). The Sn—Zn—O-based oxide sintered body according to claim 1, wherein the Sn—Zn—O-based oxide sintered body is contained at a ratio of 0.04 or less and the oxide sintered body has a relative density of 98% or more. 原子数比Ｓｎ／（Ｚｎ＋Ｓｎ）が０．７５以上０．９以下となるように配合された酸化錫（ＳｎＯ2）粉末と酸化亜鉛（ＺｎＯ）粉末、および、Ｎｂ、Ｔａ、Ｗ、Ｍｏから選ばれた少なくとも１種の元素（Ｘ）で構成されかつＳｎとＺｎと添加元素（Ｘ）の総量に対する原子数比Ｘ／（Ｓｎ＋Ｚｎ＋Ｘ）が０．００１以上０．１以下となるように配合された添加元素（Ｘ）の酸化物粉末を、純水、有機バインダー、分散剤と混合し、得られたスラリーを乾燥しかつ造粒して造粒粉末を製造する造粒粉末製造工程と、
上記造粒粉末を加圧成形して成形体を得る成形体製造工程と、
焼成炉内の酸素濃度が７０体積％以上の雰囲気において、７００℃から焼結温度までの昇温速度が０．４℃／ｍｉｎ以上０．８℃／ｍｉｎ以下で、かつ、焼結温度が１３００℃以上１４６０℃以下で、１０時間以上３０時間以内の条件で上記成形体を焼成して焼結体を製造する焼結体製造工程、
を具備することを特徴とするＳｎ−Ｚｎ−Ｏ系酸化物焼結体の製造方法。 Selected from tin oxide (SnO 2 ) powder and zinc oxide (ZnO) powder, and Nb, Ta, W, and Mo mixed so that the atomic ratio Sn / (Zn + Sn) is 0.75 or more and 0.9 or less. And an atomic ratio X / (Sn + Zn + X) with respect to the total amount of Sn, Zn and additive element (X) is 0.001 or more and 0.1 or less. A granulated powder production step of mixing the oxide powder of the additive element (X) with pure water, an organic binder, a dispersant, drying and granulating the resulting slurry to produce a granulated powder,
A molded body manufacturing process for obtaining a molded body by pressure molding the granulated powder; and
In an atmosphere where the oxygen concentration in the firing furnace is 70% by volume or more, the rate of temperature increase from 700 ° C. to the sintering temperature is 0.4 ° C./min to 0.8 ° C./min and the sintering temperature is 1300. A sintered body production process for producing a sintered body by firing the molded body under a condition of 10 ° C or more and 1460 ° C or less and 10 hours or more and 30 hours or less,
The manufacturing method of the Sn-Zn-O type oxide sintered compact characterized by comprising. 原子数比Ｓｎ／（Ｚｎ＋Ｓｎ）が０．７５以上０．９以下となるように配合された酸化錫（ＳｎＯ2）粉末と酸化亜鉛（ＺｎＯ）粉末、および、Ｎｂ、Ｔａ、Ｗ、Ｍｏから選ばれた少なくとも１種の元素（Ｘ）で構成されかつＳｎとＺｎと添加元素（Ｘ）の総量に対する原子数比Ｘ／（Ｓｎ＋Ｚｎ＋Ｘ）が０．００１以上０．１以下となるように配合された添加元素（Ｘ）の酸化物粉末に加え、Ｓｉ、Ｇｅ、Ｃｅ、Ｉｎ、Ｂｉ、Ｇａから選ばれた少なくとも１種の添加元素（Ｍ）で構成されかつＳｎとＺｎと添加元素（Ｍ）の総量に対する原子数比Ｍ／（Ｓｎ＋Ｚｎ＋Ｍ）として０．０００１以上０．０４以下となるように配合された添加元素（Ｍ）の酸化物粉末を更に添加することを特徴とする請求項３に記載のＳｎ−Ｚｎ−Ｏ系酸化物焼結体の製造方法。 Selected from tin oxide (SnO 2 ) powder and zinc oxide (ZnO) powder, and Nb, Ta, W, and Mo mixed so that the atomic ratio Sn / (Zn + Sn) is 0.75 or more and 0.9 or less. And an atomic ratio X / (Sn + Zn + X) with respect to the total amount of Sn, Zn and additive element (X) is 0.001 or more and 0.1 or less. In addition to the oxide powder of the additive element (X), it is composed of at least one additive element (M) selected from Si, Ge, Ce, In, Bi, and Ga, and Sn, Zn, and the additive element (M). The oxide powder of the additive element (M) blended so that the atomic ratio M / (Sn + Zn + M) with respect to the total amount is 0.0001 or more and 0.04 or less is further added. Sn-Zn-O-based oxide firing Method of manufacturing the body.
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