JP2017152606A - Heat radiation substrate, semiconductor package using the same, and semiconductor module - Google Patents

Heat radiation substrate, semiconductor package using the same, and semiconductor module Download PDF

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JP2017152606A
JP2017152606A JP2016035422A JP2016035422A JP2017152606A JP 2017152606 A JP2017152606 A JP 2017152606A JP 2016035422 A JP2016035422 A JP 2016035422A JP 2016035422 A JP2016035422 A JP 2016035422A JP 2017152606 A JP2017152606 A JP 2017152606A
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metal layer
holes
heat dissipation
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plan
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JP6549502B2 (en
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剛生 内田
Takeo Uchida
剛生 内田
木津　正二郎
Shojiro Kizu
正二郎 木津
慎也 冨田
Shinya Tomita
慎也 冨田
憲正 上田
Norimasa Ueda
憲正 上田
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Kyocera Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor package which enables reduction of warpage of a heat radiation substrate and achieves excellent heat radiation performance, and to provide a semiconductor device.SOLUTION: A heat radiation substrate 100 includes: a first metal layer 1; a second metal layer 2 and a third metal layer 3 joined to the first metal layer 1; a fourth metal layer 4 joined to the second metal layer 2; and a fifth metal layer 5 joined to the third metal layer 3. First through holes 2a are provided at the second metal layer 2. Second through holes 3a are provided at the third metal layer 3. In a plan view, a centroid of each of the multiple first through holes 2a is offset from a centroid of each of the second through holes 3a.SELECTED DRAWING: Figure 2

Description

本発明は、電力用半導体素子などの半導体素子から発生した熱を放熱するための放熱基板、および該放熱基板を用いた半導体パッケージならびに半導体モジュールに関する。   The present invention relates to a heat dissipation substrate for dissipating heat generated from a semiconductor element such as a power semiconductor element, a semiconductor package using the heat dissipation substrate, and a semiconductor module.

特許文献１に記載されるように、電力供給用半導体チップから発生した熱を放熱するための放熱基板は、銅または銅合金の高熱伝導層と、Ｆｅ−Ｎｉ系合金の低熱膨張層とを交互に複数積層してなり、低熱膨張層を挟持する高熱伝導層が、低熱膨張層に形成された複数の貫通孔を介して連続する構成を有する。   As described in Patent Document 1, a heat dissipation board for dissipating heat generated from a semiconductor chip for power supply includes a high thermal conductive layer of copper or a copper alloy and a low thermal expansion layer of an Fe-Ni alloy alternately. A plurality of high thermal conductive layers that are laminated to each other and sandwich the low thermal expansion layer are continuous through a plurality of through holes formed in the low thermal expansion layer.

特開平１０−１７３１０９号公報JP-A-10-173109

従来の放熱基板は、銅または銅合金とＦｅ−Ｎｉ系合金との熱膨張係数の違いにより、放熱基板に反りが発生する場合があり、外部への放熱性が低下し易いという問題があった。   The conventional heat dissipation board has a problem that the heat dissipation board may be warped due to a difference in thermal expansion coefficient between copper or a copper alloy and an Fe—Ni alloy, and the heat dissipation performance to the outside tends to decrease. .

本発明の実施形態の放熱基板は、
第１金属層と、
前記第１金属層の第１面に接合された第２金属層であって、厚み方向に貫通する複数の第１貫通孔が設けられた第２金属層と、
前記第１金属層の、前記第１面の反対側の第２面に接合された第３金属層であって、厚み方向に貫通する複数の第２貫通孔が設けられた第３金属層と、
前記第２金属層の、前記第１金属層の前記第１面に接合された面の反対側の面に接合された第４金属層と、
前記第３金属層の、前記第１金属層の前記第２面に接合された面の反対側の面に接合された第５金属層と、
前記複数の第１貫通孔、および前記複数の第２貫通孔に充填された金属部材と、を含み、
前記第１金属層、前記第４金属層、および前記第５金属層は、前記第２金属層、および前記第３金属層のヤング率よりも小さいヤング率を有し、
平面視で、前記複数の第１貫通孔の各々の図心と、前記複数の第２貫通孔の各々の図心とがずれていることを特徴とする。 The heat dissipation board of the embodiment of the present invention is
A first metal layer;
A second metal layer bonded to the first surface of the first metal layer, the second metal layer provided with a plurality of first through holes penetrating in the thickness direction;
A third metal layer bonded to a second surface of the first metal layer opposite to the first surface, the third metal layer having a plurality of second through holes penetrating in the thickness direction; ,
A fourth metal layer bonded to a surface of the second metal layer opposite to a surface bonded to the first surface of the first metal layer;
A fifth metal layer bonded to a surface of the third metal layer opposite to a surface bonded to the second surface of the first metal layer;
A metal member filled in the plurality of first through holes and the plurality of second through holes,
The first metal layer, the fourth metal layer, and the fifth metal layer have Young's moduli smaller than Young's moduli of the second metal layer and the third metal layer,
The centroids of the plurality of first through holes and the centroids of the plurality of second through holes are shifted in plan view.

また、本発明の実施形態の半導体パッケージは、上記の放熱基板と、
前記放熱基板の前記第４金属層に固定された、絶縁体からなる枠体と、
該枠体に取り付けられた電力供給用端子と、を含むことを特徴とする。 Moreover, the semiconductor package of the embodiment of the present invention includes the above heat dissipation substrate,
A frame made of an insulator fixed to the fourth metal layer of the heat dissipation substrate;
And a power supply terminal attached to the frame.

また、本発明の実施形態の半導体装置は、上記の半導体パッケージと、
該半導体パッケージに搭載された半導体素子と、を含むことを特徴とする。 A semiconductor device according to an embodiment of the present invention includes the semiconductor package described above.
And a semiconductor element mounted on the semiconductor package.

本発明の実施形態の放熱基板によれば、半導体素子から発生した熱により放熱基板が加
熱されたときに、放熱基板の反りを抑制することができる。 According to the heat dissipation substrate of the embodiment of the present invention, when the heat dissipation substrate is heated by the heat generated from the semiconductor element, the warpage of the heat dissipation substrate can be suppressed.

また、本発明の実施形態の半導体パッケージによれば、上記の放熱基板を備えることにより、放熱基板の反りに起因する放熱性の低下を抑制することができる。   In addition, according to the semiconductor package of the embodiment of the present invention, by providing the heat dissipation substrate, it is possible to suppress a decrease in heat dissipation due to warpage of the heat dissipation substrate.

また、本発明の実施形態の半導体装置によれば、上記の半導体パッケージを備えることにより、半導体素子から発生した熱を良好に放散させることができ、高い信頼性を実現できる   Further, according to the semiconductor device of the embodiment of the present invention, by providing the above-described semiconductor package, heat generated from the semiconductor element can be dissipated well, and high reliability can be realized.

本発明の実施形態に係る放熱基板の斜視図である。It is a perspective view of the thermal radiation board concerning the embodiment of the present invention. （ａ）は図１のＡ−Ａ線における放熱基板の断面図であり、（ｂ）は（ａ）の部分拡大断面斜視図である。(A) is sectional drawing of the thermal radiation board | substrate in the AA line of FIG. 1, (b) is the partial expanded sectional perspective view of (a). 本発明の実施形態に係る放熱基板の分解斜視図である。It is a disassembled perspective view of the thermal radiation board which concerns on embodiment of this invention. 放熱基板を構成する各金属層の一つの態様を示す平面図である。It is a top view which shows one aspect | mode of each metal layer which comprises a heat sink. 放熱基板を構成する各金属層の他の態様を示す平面図である。It is a top view which shows the other aspect of each metal layer which comprises a heat sink. 本発明の実施形態に係る半導体パッケージを示す斜視図である。1 is a perspective view showing a semiconductor package according to an embodiment of the present invention. 本発明の実施形態に係る半導体装置を示す斜視図である。1 is a perspective view showing a semiconductor device according to an embodiment of the present invention.

本発明の実施形態に係る放熱基板、半導体パッケージ、および半導体装置について以下に詳細に説明する。   A heat dissipation board, a semiconductor package, and a semiconductor device according to embodiments of the present invention will be described in detail below.

図１は、本発明の実施形態に係る放熱基板の斜視図である。図２（ａ）は、図１のＡ−Ａ線における放熱基板の断面図であり、図２（ｂ）は、図２（ａ）の部分拡大断面斜視図である。図３は、本発明の実施形態に係る放熱基板の分解斜視図である。図４は、本発明の実施形態に係る放熱基板を構成する各金属層の平面図である。図５は、本発明の他の実施形態に係る放熱基板を構成する各金属層の平面図である。図６は、本発明の実施形態に係る半導体パッケージを示す斜視図である。図７は、本発明の実施形態に係る半導体装置を示す斜視図である。   FIG. 1 is a perspective view of a heat dissipation board according to an embodiment of the present invention. 2A is a cross-sectional view of the heat dissipation board taken along line AA in FIG. 1, and FIG. 2B is a partially enlarged cross-sectional perspective view of FIG. FIG. 3 is an exploded perspective view of the heat dissipation board according to the embodiment of the present invention. FIG. 4 is a plan view of each metal layer constituting the heat dissipation substrate according to the embodiment of the present invention. FIG. 5 is a plan view of each metal layer constituting a heat dissipation board according to another embodiment of the present invention. FIG. 6 is a perspective view showing a semiconductor package according to the embodiment of the present invention. FIG. 7 is a perspective view showing a semiconductor device according to the embodiment of the present invention.

放熱基板１００は、第１金属層１、第２金属層２、第３金属層３、第４金属層４、および第５金属層５、および金属部材６を含む。   The heat dissipation substrate 100 includes a first metal layer 1, a second metal layer 2, a third metal layer 3, a fourth metal layer 4, a fifth metal layer 5, and a metal member 6.

第１金属層１は、第１面１ａと、第１面の反対側の第２面１ｂとを有する。第１面１ａには第２金属層２が接合され、第２面１ｂには、第３金属層３が接合される。さらに、第４金属層４が、第２金属層２の、第１金属層１の第１面１ａに接合された面の反対側の面に接合される。また、第５金属層５が、第３金属層３の、第１金属層１の第２面１ｂに接合された面の反対側の面に接合される。すなわち、本発明の実施形態の放熱基板１００は、図３に示すように、第５金属層５、第３金属層３、第１金属層１、第２金属層２、および第４金属層４が、順次積層された構成を有する。   The first metal layer 1 has a first surface 1a and a second surface 1b opposite to the first surface. The second metal layer 2 is bonded to the first surface 1a, and the third metal layer 3 is bonded to the second surface 1b. Further, the fourth metal layer 4 is bonded to the surface of the second metal layer 2 opposite to the surface bonded to the first surface 1 a of the first metal layer 1. The fifth metal layer 5 is bonded to the surface of the third metal layer 3 opposite to the surface bonded to the second surface 1 b of the first metal layer 1. That is, as shown in FIG. 3, the heat dissipation substrate 100 according to the embodiment of the present invention includes a fifth metal layer 5, a third metal layer 3, a first metal layer 1, a second metal layer 2, and a fourth metal layer 4. However, it has the structure laminated | stacked one by one.

また、第１金属層１、第４金属層４、および第５金属層５のヤング率は、第２金属層２、および第３金属層３のヤング率よりも小さくなっている。第１金属層１、第４金属層４、第５金属層５は、第２金属層２、および第３金属層３のヤング率よりも小さいヤング率を有していればよく、第１金属層１と、第４金属層４と、第５金属層５とは、同一のヤング率を有してもよく、異なるヤング率を有してもよい。また、第２金属層２、および第３金属層３は、第１金属層１、第４金属層４、および第５金属層５よりも大きいヤング率を有していればよく、第２金属層２と、第３金属層３とは、同一のヤング率を有してもよく、異なるヤング率を有してもよい。   The Young's modulus of the first metal layer 1, the fourth metal layer 4, and the fifth metal layer 5 is smaller than the Young's modulus of the second metal layer 2 and the third metal layer 3. The first metal layer 1, the fourth metal layer 4, and the fifth metal layer 5 only have to have a Young's modulus smaller than that of the second metal layer 2 and the third metal layer 3. The layer 1, the fourth metal layer 4, and the fifth metal layer 5 may have the same Young's modulus or different Young's moduli. The second metal layer 2 and the third metal layer 3 only have to have a larger Young's modulus than the first metal layer 1, the fourth metal layer 4, and the fifth metal layer 5. The layer 2 and the third metal layer 3 may have the same Young's modulus or different Young's moduli.

さらに、第１金属層１、第４金属層４、第５金属層５、および金属部材６には、熱伝導率が、第２金属層２および第３金属層３の熱伝導率よりも大きいものが用いられる。また、第１金属層１、第４金属層４、第５金属層５、および金属部材６の熱膨張係数は、第２金属層２および第３金属層３の熱膨張係数よりも大きい。   Further, the first metal layer 1, the fourth metal layer 4, the fifth metal layer 5, and the metal member 6 have a thermal conductivity larger than that of the second metal layer 2 and the third metal layer 3. Things are used. Further, the thermal expansion coefficients of the first metal layer 1, the fourth metal layer 4, the fifth metal layer 5, and the metal member 6 are larger than the thermal expansion coefficients of the second metal layer 2 and the third metal layer 3.

第１金属層１、第４金属層４、第５金属層５、および金属部材６の例としては、例えば、銅、銀、アルミニウム（Ａｌ）、金（Ａｕ）等の金属材料、またはこれらの合金から形成したものが挙げられる。本実施形態では、第１金属層１、第４金属層４、および第５金属層５は、銅または銅を含む合金から成る。   Examples of the first metal layer 1, the fourth metal layer 4, the fifth metal layer 5, and the metal member 6 include, for example, metal materials such as copper, silver, aluminum (Al), gold (Au), or the like. The thing formed from the alloy is mentioned. In the present embodiment, the first metal layer 1, the fourth metal layer 4, and the fifth metal layer 5 are made of copper or an alloy containing copper.

第２金属層２、および第３金属層３は、モリブデン（Ｍｏ），タングステン（Ｗ）等の金属材料、またはこれらの合金（銅−モリブデン焼結体、銅−タングステン焼結体等）から形成されてもよい。本実施形態では、第２金属層２、および第３金属層３は、モリブデンまたはモリブデンを含む合金から成る。   The second metal layer 2 and the third metal layer 3 are formed of a metal material such as molybdenum (Mo) or tungsten (W), or an alloy thereof (copper-molybdenum sintered body, copper-tungsten sintered body, etc.). May be. In the present embodiment, the second metal layer 2 and the third metal layer 3 are made of molybdenum or an alloy containing molybdenum.

第１金属層１と、第４金属層４と、第５金属層５とは、同じ厚みを有してもよく、異なる厚みを有してもよい。また、第２金属層２と、第３金属層３とは、同じ厚みを有してもよく、異なる厚みを有してもよい。なお、第１金属層１と、第４金属層４と、第５金属層５とが同じ材料の同じ厚みとし、第２金属層２と、第３金属層３とが同じ材料の同じ厚みとすることがより好ましい。これにより、放熱基板１００に熱が加えられた際に生じる放熱基板１００の反りや変形が抑制される。   The first metal layer 1, the fourth metal layer 4, and the fifth metal layer 5 may have the same thickness or different thicknesses. Further, the second metal layer 2 and the third metal layer 3 may have the same thickness or different thicknesses. The first metal layer 1, the fourth metal layer 4, and the fifth metal layer 5 are made of the same material and have the same thickness, and the second metal layer 2 and the third metal layer 3 are made of the same material and have the same thickness. More preferably. Thereby, the curvature and deformation | transformation of the thermal radiation board | substrate 100 which arise when heat is applied to the thermal radiation board | substrate 100 are suppressed.

本発明の実施形態に係る放熱基板１００では、第１金属層１、第４金属層４、および第５金属層５が、第２金属層２、および第３金属層３の厚みよりも大きい厚みを有しており、平面視にて同じ外形を有している。例えば平面視において、第１金属層１、第４金属層４、および第５金属層５は、長辺が５ｍｍ〜３０ｍｍ、短辺が４ｍｍ〜２８ｍｍである。また、厚みは０．２ｍｍ〜２ｍｍである。第２金属層２および第３金属層３は、平面視において、長辺が５ｍｍ〜３０ｍｍ、短辺が４ｍｍ〜２８ｍｍである。また、厚みは０．１ｍｍ〜１ｍｍである。より具体的には例えば、第１金属層１の厚みは０．２ｍｍ、第４金属層４および第５金属層５の厚みは０．３ｍｍ、第２金属層２および第３金属層３の厚みは０．１ｍｍとすればよい。   In the heat dissipation substrate 100 according to the embodiment of the present invention, the first metal layer 1, the fourth metal layer 4, and the fifth metal layer 5 are thicker than the thicknesses of the second metal layer 2 and the third metal layer 3. And have the same outer shape in plan view. For example, in plan view, the first metal layer 1, the fourth metal layer 4, and the fifth metal layer 5 have a long side of 5 mm to 30 mm and a short side of 4 mm to 28 mm. The thickness is 0.2 mm to 2 mm. The second metal layer 2 and the third metal layer 3 have a long side of 5 mm to 30 mm and a short side of 4 mm to 28 mm in plan view. The thickness is 0.1 mm to 1 mm. More specifically, for example, the thickness of the first metal layer 1 is 0.2 mm, the thickness of the fourth metal layer 4 and the fifth metal layer 5 is 0.3 mm, and the thickness of the second metal layer 2 and the third metal layer 3. May be 0.1 mm.

図２（ｂ），図３に示すように、第２金属層２には、第２金属層２を厚み方向に貫通する複数の第１貫通孔２ａが設けられ、第３金属層３には、第３金属層３を厚み方向に貫通する複数の第２貫通孔３ａが設けられる。   As shown in FIGS. 2B and 3, the second metal layer 2 is provided with a plurality of first through holes 2 a penetrating the second metal layer 2 in the thickness direction. A plurality of second through holes 3a penetrating the third metal layer 3 in the thickness direction are provided.

第１貫通孔２ａおよび第２貫通孔３ａは、開口形状が、例えば、円形状、楕円形状、長円形状、正方形状、矩形形状であってもよく、その他の形状であってもよい。本発明の実施形態の放熱基板１００では、第１貫通孔２ａおよび第２貫通孔３ａの開口形状は、円形状、楕円形状、または長円形状とされている。第１貫通孔２ａおよび第２貫通孔３ａを円形状とすることにより、放熱基板１００に加えられる熱によって、第１貫通孔２ａおよび第２貫通孔３ａに生じる応力が中心軸に関して対称になり、一部に偏りにくいものとなる。   The opening shape of the first through hole 2a and the second through hole 3a may be, for example, a circular shape, an oval shape, an oval shape, a square shape, a rectangular shape, or other shapes. In the heat dissipation substrate 100 of the embodiment of the present invention, the opening shape of the first through hole 2a and the second through hole 3a is a circular shape, an elliptical shape, or an oval shape. By making the first through hole 2a and the second through hole 3a circular, the stress generated in the first through hole 2a and the second through hole 3a by the heat applied to the heat dissipation substrate 100 becomes symmetric with respect to the central axis, It becomes difficult to be partially biased.

複数の第１貫通孔２ａは、平面視で、互いに等しい面積を有してもよく、互いに異なる面積を有してもよい。複数の第２貫通孔３ａも、平面視で、互いに等しい面積を有してもよく、互いに異なる面積を有してもよい。複数の第１貫通孔２ａおよび複数の第２貫通孔３ａの面積を平面視にて互いに等しい面積とすれば、放熱基板１００に加えられる熱によって第１貫通孔２ａおよび第２貫通孔３ａの各々に生じる応力が均等になりやすい。   The plurality of first through holes 2a may have the same area as each other in a plan view or may have different areas. The plurality of second through holes 3a may also have the same area or different areas in plan view. If the areas of the plurality of first through holes 2a and the plurality of second through holes 3a are equal to each other in plan view, each of the first through holes 2a and the second through holes 3a is caused by heat applied to the heat dissipation substrate 100. The stress generated in the film tends to be uniform.

なお、第１貫通孔２ａは、例えば平面視において、直径が０．５ｍｍ〜２ｍｍの円形状、または、長径が０．５ｍｍ〜２ｍｍ、短径が０．４ｍｍ〜１．８ｍｍの楕円形状、長径方向の長さが０．５ｍｍ〜２ｍｍ、短径方向の長さが０．４ｍｍ〜１．８ｍｍの長円形状である。   The first through hole 2a has a circular shape with a diameter of 0.5 mm to 2 mm, or an elliptical shape with a major axis of 0.5 mm to 2 mm and a minor axis of 0.4 mm to 1.8 mm, and a major axis in plan view, for example. It has an oval shape with a length in the direction of 0.5 mm to 2 mm and a length in the minor axis direction of 0.4 mm to 1.8 mm.

第１貫通孔２ａまたは第２貫通孔３ａの開口形状が、楕円形状または長円形状である場合には、放熱基板１００の長辺方向と第１貫通孔２ａまたは第２貫通孔３ａの長径方向とが平行になるように配置することが好ましい。長辺方向では、第１貫通孔２ａまたは第２貫通孔３ａと、それに隣接する第１貫通孔２ａまたは第２貫通孔３ａとの間の第２金属層２や第３金属層３が連続して配置される。すなわち、長辺方向では第１貫通孔２ａまたは第２貫通孔３ａを横切らずに一辺から他辺まで連続しているのに対し、短辺方向では第１貫通孔２ａまたは第２貫通孔３ａを横切ってしまう場合が多くなる。このため、長辺方向の曲げ応力が強くなり、長辺方向の反りや変形が抑制される。   When the opening shape of the 1st through-hole 2a or the 2nd through-hole 3a is an ellipse shape or an ellipse shape, the long-side direction of the thermal radiation board | substrate 100 and the major axis direction of the 1st through-hole 2a or the 2nd through-hole 3a It is preferable to arrange them in parallel. In the long side direction, the second metal layer 2 or the third metal layer 3 between the first through hole 2a or the second through hole 3a and the first through hole 2a or the second through hole 3a adjacent thereto is continuous. Arranged. That is, the first through hole 2a or the second through hole 3a is continuous from one side to the other side without traversing the first through hole 2a or the second through hole 3a in the long side direction, whereas the first through hole 2a or the second through hole 3a is formed in the short side direction. There are many cases of crossing. For this reason, bending stress in the long side direction becomes strong, and warping and deformation in the long side direction are suppressed.

また、図２（ｂ），図３に示すように、第１貫通孔２ａおよび第２貫通孔３ａには、金属部材６が充填される。金属部材６は、例えば、銅、銀、アルミニウム（Ａｌ）、金（Ａｕ）等の熱伝導性に優れた金属、またはこれらの合金から成ることが好ましい。   As shown in FIGS. 2B and 3, the first through hole 2 a and the second through hole 3 a are filled with a metal member 6. The metal member 6 is preferably made of a metal having excellent thermal conductivity such as copper, silver, aluminum (Al), gold (Au), or an alloy thereof.

金属部材６は、第１金属層１、第４金属層４、および第５金属層５のいずれかと同じ材料から形成されてもよく、第１金属層１、第４金属層４、および第５金属層５とは異なる材料から形成されてもよい。また、第１貫通孔２ａに充填される金属部材と、第２貫通孔３ａに充填される金属部材とは、同じ材料から形成されてもよく、異なる材料から形成されてもよい。本実施形態では、第１貫通孔２ａに充填される金属部材と、第２貫通孔３ａに充填される金属部材とは、第１金属層１、第４金属層４、および第５金属層５と同一の、銅または銅を含む合金から成る。   The metal member 6 may be formed of the same material as any of the first metal layer 1, the fourth metal layer 4, and the fifth metal layer 5, and the first metal layer 1, the fourth metal layer 4, and the fifth metal layer 6 may be formed. The metal layer 5 may be made of a different material. Moreover, the metal member with which the 1st through-hole 2a is filled and the metal member with which the 2nd through-hole 3a is filled may be formed from the same material, and may be formed from a different material. In the present embodiment, the metal member filled in the first through hole 2a and the metal member filled in the second through hole 3a are the first metal layer 1, the fourth metal layer 4, and the fifth metal layer 5. Made of copper or an alloy containing copper.

また、本実施形態の放熱基板１００では、図４，図５に示すように、複数の第１貫通孔２ａおよび複数の第２貫通孔３ａは、平面視で、複数の第１貫通孔２ａの各々の図心と、複数の第２貫通孔３ａの各々の図心とがずれるように配設される。図心とは、第１貫通孔２ａおよび第２貫通孔３ａの内側平面の重心位置を意味する。以下、特に断らない限り、第１貫通孔２ａおよび第２貫通孔３ａの位置についての記載は、図心に基づくものである。   Further, in the heat dissipation substrate 100 of the present embodiment, as shown in FIGS. 4 and 5, the plurality of first through holes 2 a and the plurality of second through holes 3 a are formed of the plurality of first through holes 2 a in a plan view. Each centroid and each centroid of the plurality of second through holes 3a are arranged so as to be shifted from each other. The centroid means the position of the center of gravity of the inner plane of the first through hole 2a and the second through hole 3a. Hereinafter, unless otherwise specified, the description of the positions of the first through hole 2a and the second through hole 3a is based on the centroid.

第１貫通孔２ａおよび第２貫通孔３ａの図心が一致するように配置されているとすると、第１貫通孔２ａおよび第２貫通孔３ａの存在する放熱基板１００の一方面から他方面に至る断面に於いて、第２金属層２または第３金属層３が存在しない部分が生じる。本発明の実施形態に係る放熱基板１００によれば、放熱基板１００の一方面から他方面に至る断面内に於いて、少なくとも第２金属層２または第３金属層３が配置される構造とすることができる。それによって、放熱基板１００の反りや変形を小さくすることができる。   If the first through hole 2a and the second through hole 3a are arranged so that the centroids coincide with each other, the heat dissipation substrate 100 where the first through hole 2a and the second through hole 3a exist is changed from one surface to the other surface. A portion where the second metal layer 2 or the third metal layer 3 does not exist is formed in the cross section. The heat dissipation substrate 100 according to the embodiment of the present invention has a structure in which at least the second metal layer 2 or the third metal layer 3 is disposed in a cross section from one surface of the heat dissipation substrate 100 to the other surface. be able to. As a result, warpage and deformation of the heat dissipation substrate 100 can be reduced.

放熱基板１００は、第５金属層５の、第３金属層３に接合された面と反対側の面を、外部基板（図示せず）等の外部放熱体に接触させた状態で使用されるので、放熱基板１００に反りが発生すると、放熱基板１００と外部基板との接触面積が減少し、放熱性が低下する。本発明の実施形態に係る放熱基板１００によれば、放熱基板１００の反りを低減し、放熱性の低下を抑制することができる。なお、隣接する第１貫通孔２ａ同士の間隔と、隣接する第２貫通孔３ａ同士の間隔を同じにすることが好ましい。また、平面視にて隣接する第１貫通孔２ａの中央に第２貫通孔３ａを配置するようにすることが好ましい。放熱基板１００に加えられる熱によって、第１貫通孔２ａおよび第２貫通孔３ａの周辺に生じる応力による変形が局所的に大きくならないようにすることができる。   The heat dissipation substrate 100 is used in a state where the surface of the fifth metal layer 5 opposite to the surface bonded to the third metal layer 3 is in contact with an external heat dissipation body such as an external substrate (not shown). Therefore, when the heat dissipation substrate 100 is warped, the contact area between the heat dissipation substrate 100 and the external substrate is reduced, and the heat dissipation performance is deteriorated. According to the heat dissipation substrate 100 according to the embodiment of the present invention, it is possible to reduce the warpage of the heat dissipation substrate 100 and to suppress a decrease in heat dissipation. In addition, it is preferable to make the space | interval of adjacent 1st through-hole 2a and the space | interval of adjacent 2nd through-hole 3a the same. Moreover, it is preferable to arrange | position the 2nd through-hole 3a in the center of the 1st through-hole 2a adjacent in planar view. Due to the heat applied to the heat dissipation substrate 100, deformation due to stress generated around the first through hole 2a and the second through hole 3a can be prevented from locally increasing.

放熱基板１００は、例えば半導体パッケージ２００として、第５金属層５の、第３金属層３に接合された面と反対側の面を、外部基板（図示せず）に接触させた状態で使用されるので、放熱基板１００に反りや変形が発生すると、放熱基板１００と外部基板との接触面積が減少し、放熱基板１００を介した半導体パッケージ２００の放熱性が低下する。本発明の実施形態に係る放熱基板１００によれば、放熱基板１００の反りや変形を低減し、放熱性の低下を抑制することができる。   The heat dissipation substrate 100 is used, for example, as the semiconductor package 200 in a state where the surface of the fifth metal layer 5 opposite to the surface bonded to the third metal layer 3 is in contact with an external substrate (not shown). Therefore, when the heat dissipation substrate 100 is warped or deformed, the contact area between the heat dissipation substrate 100 and the external substrate is reduced, and the heat dissipation performance of the semiconductor package 200 via the heat dissipation substrate 100 is reduced. According to the heat dissipation substrate 100 according to the embodiment of the present invention, it is possible to reduce warping and deformation of the heat dissipation substrate 100 and to suppress a decrease in heat dissipation.

また、放熱基板１００において、第２金属層２、および第３金属層３は、第１金属層１、第４金属層４、および第５金属層５のヤング率よりも大きなヤング率を有し、第２金属層２は、第１金属層１と第４金属層４との間に挟持され、第３金属層３は、第１金属層１と第５金属層５との間に挟持された構成を有する。このような構成によれば、放熱基板１００の剛性の低下を効果的に抑制するとともに、放熱基板１００の表面の平坦度を向上させることができる。   In the heat dissipation substrate 100, the second metal layer 2 and the third metal layer 3 have Young's moduli larger than the Young's moduli of the first metal layer 1, the fourth metal layer 4, and the fifth metal layer 5. The second metal layer 2 is sandwiched between the first metal layer 1 and the fourth metal layer 4, and the third metal layer 3 is sandwiched between the first metal layer 1 and the fifth metal layer 5. Have a configuration. According to such a configuration, it is possible to effectively suppress a reduction in rigidity of the heat dissipation board 100 and improve the flatness of the surface of the heat dissipation board 100.

また、第１金属層１と第４金属層４の間、および第１金属層１と第５金属層５との間にそれぞれ熱膨張係数の小さな第２金属層２および第３金属層３が挟持されているので、第１金属層１、第４金属層４および第５金属層５は第２金属層２および第３金属層３に拘束されて熱膨張が抑制される。これによって、熱膨張係数の小さい半導体素子９の搭載が容易になる。   Further, the second metal layer 2 and the third metal layer 3 having a small coefficient of thermal expansion are provided between the first metal layer 1 and the fourth metal layer 4 and between the first metal layer 1 and the fifth metal layer 5, respectively. Since the first metal layer 1, the fourth metal layer 4, and the fifth metal layer 5 are held by the second metal layer 2 and the third metal layer 3, thermal expansion is suppressed. This facilitates mounting of the semiconductor element 9 having a small thermal expansion coefficient.

また、複数の第１貫通孔２ａ、および複数の第２貫通孔３ａは、平面視で、矩形格子状または斜方格子状に配設されていることが好ましい。第１貫通孔２ａおよび第２貫通孔３ａが斜方格子状に配置された例を図４および図５に示す。このような構成によれば、第２金属層２を介する放熱経路が第２金属層２に分散して設けられ、第３金属層３を介する放熱経路が第３金属層３に分散して設けられるので、放熱基板１００における熱分布の偏りを低減することができ、それによって、放熱基板１００の反りを効果的に抑制することができる。   The plurality of first through holes 2a and the plurality of second through holes 3a are preferably arranged in a rectangular lattice shape or an oblique lattice shape in plan view. An example in which the first through-holes 2a and the second through-holes 3a are arranged in an oblique lattice is shown in FIGS. According to such a configuration, the heat dissipation path via the second metal layer 2 is provided dispersed in the second metal layer 2, and the heat dissipation path via the third metal layer 3 is provided dispersedly in the third metal layer 3. Therefore, the deviation of the heat distribution in the heat dissipation substrate 100 can be reduced, and thereby the warpage of the heat dissipation substrate 100 can be effectively suppressed.

第１貫通孔２ａおよび第２貫通孔３ａを斜方格子状に配置すると、放熱基板１００の長辺方向または短辺方向の反りや曲がりを生じ難くできる。   When the first through-holes 2a and the second through-holes 3a are arranged in an orthorhombic lattice shape, it is possible to prevent warping or bending of the heat dissipation substrate 100 in the long side direction or the short side direction.

平面視で、複数の第１貫通孔２ａと、複数の第２貫通孔３ａとは、重ならないように配設されてもよい。すなわち、複数の第１貫通孔２ａと、複数の第２貫通孔３ａとは、平面視で、重複する部分がないように配設されてもよい。このような構成によれば、放熱基板１００の反りを一層効果的に低減することができる。   The plurality of first through holes 2a and the plurality of second through holes 3a may be disposed so as not to overlap each other in plan view. That is, the plurality of first through holes 2a and the plurality of second through holes 3a may be disposed so as not to overlap with each other in plan view. According to such a configuration, warpage of the heat dissipation substrate 100 can be further effectively reduced.

複数の第１貫通孔２ａの各々は、平面視したときに、複数の第２貫通孔３ａのうちの少なくともいずれか１つに重なるように配設されてもよい。すなわち、複数の第１貫通孔２ａの各々は、複数の第２貫通孔３ａのうちの少なくともいずれか１つに一部分が重複するように配設されてもよい。このような構成によれば、放熱基板１００における熱分布の偏りを低減することが可能になるとともに金属部材６を介した、放熱基板１００の厚み方向における効率的な熱伝導が可能になる。   Each of the plurality of first through holes 2a may be disposed so as to overlap at least one of the plurality of second through holes 3a when viewed in plan. That is, each of the plurality of first through holes 2a may be disposed so that a part thereof overlaps at least one of the plurality of second through holes 3a. According to such a configuration, it is possible to reduce the uneven distribution of heat in the heat dissipation substrate 100 and to efficiently conduct heat in the thickness direction of the heat dissipation substrate 100 via the metal member 6.

また、平面視で、複数の第１貫通孔２ａの面積が互いに等しく、複数の第２貫通孔３ａの面積が互いに等しく、さらに第２貫通孔３ａの面積が、第１貫通孔２ａの面積よりも大きいようにしてもよい。これによって、放熱基板１００の第４金属層４から第５金属層５の方向への熱伝導性をよくすることができる。   In plan view, the areas of the plurality of first through holes 2a are equal to each other, the areas of the plurality of second through holes 3a are equal to each other, and the area of the second through holes 3a is larger than the area of the first through holes 2a. May be large. Thereby, the thermal conductivity from the fourth metal layer 4 to the fifth metal layer 5 of the heat dissipation substrate 100 can be improved.

本発明の実施形態に係る放熱基板１００は、以下のようにして作製される。   The heat dissipation substrate 100 according to the embodiment of the present invention is manufactured as follows.

先ず、金型を用いた打ち抜き加工や切削加工を施すことによって、銅または銅を含む合金から成る第１金属層１、第４金属層４、および第５金属層５を準備し、金型を用いた打ち抜き加工や切削加工を施すことによって、モリブデンまたはモリブデンを含む合金から成る複数の第１貫通孔２ａが形成された第２金属層２、および複数の第２貫通孔３ａが形成された第３金属層３を準備する。   First, the first metal layer 1, the fourth metal layer 4, and the fifth metal layer 5 made of copper or an alloy containing copper are prepared by punching or cutting using a mold, and the mold is formed. By performing the punching process or the cutting process used, the second metal layer 2 in which a plurality of first through holes 2a made of molybdenum or an alloy containing molybdenum are formed, and the second metal layer 2 in which a plurality of second through holes 3a are formed. Three metal layers 3 are prepared.

次いで、第１金属層１、第２金属層２、第３金属層３、第４金属層４、および第５金属層５を、所定の順序で積層した後、圧延圧着処理を施すことによって、第１金属層１、第４金属層４、および第５金属層５を構成する金属部材６が、第１貫通孔２ａおよび第２貫通孔３ａに充填された放熱基板１００が得られる。   Then, after laminating the first metal layer 1, the second metal layer 2, the third metal layer 3, the fourth metal layer 4, and the fifth metal layer 5 in a predetermined order, by performing a rolling pressure bonding treatment, The heat dissipation substrate 100 in which the metal members 6 constituting the first metal layer 1, the fourth metal layer 4, and the fifth metal layer 5 are filled in the first through hole 2a and the second through hole 3a is obtained.

本発明の実施形態に係る放熱基板１００は、次のように作製されてもよい。先ず、上記のように、第１金属層１、第４金属層４、および第５金属層５を準備する。さらに、第１貫通孔２ａに金属部材６が予め充填された第２金属層２、および第２貫通孔３ａに金属部材６が予め充填された第３金属層３を準備する。次いで、第１金属層１と第２金属層２との間、第１金属層１と第３金属層３との間、第２金属層２と第４金属層４との間、および第３金属層３と第５金属層５との間に銀−銅ロウ等のロウ材のプリフォームを挟み込む。この状態で高温炉（例えば、銀−銅ロウを用いる場合は約８００℃）内に投入し、ロウ材のプリフォームを溶融させた後、高温炉から取り出して冷却することによって、放熱基板１００が得られる。   The heat dissipation substrate 100 according to the embodiment of the present invention may be manufactured as follows. First, as described above, the first metal layer 1, the fourth metal layer 4, and the fifth metal layer 5 are prepared. Furthermore, the second metal layer 2 in which the first through hole 2a is pre-filled with the metal member 6 and the third metal layer 3 in which the second through hole 3a is pre-filled with the metal member 6 are prepared. Next, between the first metal layer 1 and the second metal layer 2, between the first metal layer 1 and the third metal layer 3, between the second metal layer 2 and the fourth metal layer 4, and third A preform made of a brazing material such as silver-copper brazing is sandwiched between the metal layer 3 and the fifth metal layer 5. In this state, the heat dissipation substrate 100 is put into a high-temperature furnace (for example, about 800 ° C. when silver-copper brazing is used), the preform of the brazing material is melted, and then taken out from the high-temperature furnace and cooled. can get.

本発明の実施形態に係る半導体パッケージ２００は、上記構成の放熱基板１００と、絶縁体からなる枠体７と、電力供給用端子８とを含んで構成され、放熱基板１００の第４金属層４に、絶縁体からなる枠体７を取り付け、枠体７に電力供給用端子８を取り付けることにより作製される。   The semiconductor package 200 according to the embodiment of the present invention includes the heat dissipation substrate 100 having the above-described configuration, a frame 7 made of an insulator, and a power supply terminal 8, and the fourth metal layer 4 of the heat dissipation substrate 100. Further, the frame body 7 made of an insulator is attached, and the power supply terminal 8 is attached to the frame body 7.

枠体７は、絶縁性を有するものであればよく、例えば、樹脂から成ってもよく、セラミックスから成ってもよい。本発明の実施形態に係る半導体パッケージ２００では、枠体７は、例えば、Ａｌ２Ｏ３質セラミックス、ＡｌＮ質セラミックス、３Ａｌ２Ｏ３・２ＳｉＯ２質セラミックス等の絶縁体から成る。 The frame body 7 only needs to have insulating properties. For example, the frame body 7 may be made of resin or ceramics. In the semiconductor package 200 according to an embodiment of the present invention, the frame body 7, for example, made of Al 2 O 3 quality ceramic, AlN ceramics, 3Al 2 O 3 · 2SiO insulator such 2 quality ceramics.

半導体パッケージ２００によれば、放熱基板１００を含むことにより、放熱基板１００の反りや変形に起因する外部放熱体への放熱性の低下を抑制することができる。また、放熱基板１００の反りが少ないので、放熱基板１００に取り付けた枠体７が剥離したり、曲げ応力によって亀裂を生じたりする可能性を低減できる。半導体パッケージ２００は、特に大電力用途の半導体素子９、その他高発熱性の電子部品等を搭載する用途に好適である。   According to the semiconductor package 200, by including the heat dissipation substrate 100, it is possible to suppress a decrease in heat dissipation to the external heat dissipation body due to warpage or deformation of the heat dissipation substrate 100. Moreover, since there is little curvature of the thermal radiation board | substrate 100, possibility that the frame 7 attached to the thermal radiation board | substrate 100 will peel or a crack will arise by bending stress can be reduced. The semiconductor package 200 is particularly suitable for use in mounting a semiconductor element 9 for high power use and other highly heat-generating electronic components.

本発明の実施形態に係る半導体装置３００は、上記構成の半導体パッケージ２００と、半導体素子９とを含んで構成され、半導体パッケージ２００に半導体素子９を搭載し、電力供給用端子８と半導体素子９とをボンディングワイヤ１０で電気的に接続することにより作製される。半導体素子９は、第４金属層４の、枠体７の内側の領域に搭載される。
その後、半導体素子９をポッティング樹脂で封止したり、枠体７の上面に蓋体を取り付けて半導体素子９を封止したりして保護し、半導体装置３００が完成する。 The semiconductor device 300 according to the embodiment of the present invention includes the semiconductor package 200 having the above configuration and the semiconductor element 9. The semiconductor element 9 is mounted on the semiconductor package 200, and the power supply terminal 8 and the semiconductor element 9 are mounted. Are electrically connected by a bonding wire 10. The semiconductor element 9 is mounted on a region inside the frame body 7 of the fourth metal layer 4.
Thereafter, the semiconductor element 9 is sealed with potting resin, or a lid is attached to the upper surface of the frame body 7 to seal the semiconductor element 9, thereby protecting the semiconductor device 300.

半導体装置３００によれば、半導体パッケージ２００を含むことにより、放熱基板１００の反りや変形を抑制できるとともに、半導体素子９から発生した熱を良好に放散させることができ、封止性能にも優れるので、信頼性が向上された半導体装置を提供することができる。   According to the semiconductor device 300, by including the semiconductor package 200, it is possible to suppress warping and deformation of the heat dissipation substrate 100, to dissipate heat generated from the semiconductor element 9 well, and to have excellent sealing performance. A semiconductor device with improved reliability can be provided.

１ 第１金属層
１ａ 第１面
１ｂ 第２面
２ 第２金属層
２ａ 第１貫通孔
３ 第３金属層
３ａ 第２貫通孔
４ 第４金属層
５ 第５金属層
６ 金属部材
７ 枠体
８ 電力供給用端子
９ 半導体素子
１０ ボンディングワイヤ
１００ 放熱基板
２００ 半導体パッケージ
３００ 半導体装置 DESCRIPTION OF SYMBOLS 1 1st metal layer 1a 1st surface 1b 2nd surface 2 2nd metal layer 2a 1st through-hole 3 3rd metal layer 3a 2nd through-hole 4 4th metal layer 5 5th metal layer 6 Metal member 7 Frame 8 Terminal for power supply 9 Semiconductor element 10 Bonding wire 100 Heat dissipation substrate 200 Semiconductor package 300 Semiconductor device

Claims (10)

第１金属層と、
前記第１金属層の第１面に接合された第２金属層であって、厚み方向に貫通する複数の第１貫通孔が設けられた第２金属層と、
前記第１金属層の、前記第１面の反対側の第２面に接合された第３金属層であって、厚み方向に貫通する複数の第２貫通孔が設けられた第３金属層と、
前記第２金属層の、前記第１金属層の前記第１面に接合された面の反対側の面に接合された第４金属層と、
前記第３金属層の、前記第１金属層の前記第２面に接合された面の反対側の面に接合された第５金属層と、
前記複数の第１貫通孔、および前記複数の第２貫通孔に充填された金属部材と、を含み、
前記第１金属層、前記第４金属層、および前記第５金属層は、前記第２金属層、および前記第３金属層のヤング率よりも小さいヤング率を有し、
平面視で、前記複数の第１貫通孔の各々の図心と、前記複数の第２貫通孔の各々の図心とがずれていることを特徴とする放熱基板。 A first metal layer;
A second metal layer bonded to the first surface of the first metal layer, the second metal layer provided with a plurality of first through holes penetrating in the thickness direction;
A third metal layer bonded to a second surface of the first metal layer opposite to the first surface, the third metal layer having a plurality of second through holes penetrating in the thickness direction; ,
A fourth metal layer bonded to a surface of the second metal layer opposite to a surface bonded to the first surface of the first metal layer;
A fifth metal layer bonded to a surface of the third metal layer opposite to a surface bonded to the second surface of the first metal layer;
A metal member filled in the plurality of first through holes and the plurality of second through holes,
The first metal layer, the fourth metal layer, and the fifth metal layer have Young's moduli smaller than Young's moduli of the second metal layer and the third metal layer,
A radiating board, wherein a centroid of each of the plurality of first through holes and a centroid of each of the plurality of second through holes are misaligned in plan view. 前記第１金属層、前記第４金属層、前記第５金属層、および前記金属部材は、銅または銅を含む合金からなり、前記第２金属層、および前記第３金属層は、モリブデンまたはモリブデンを含む合金からなることを特徴とする請求項１に記載の放熱基板。   The first metal layer, the fourth metal layer, the fifth metal layer, and the metal member are made of copper or an alloy containing copper, and the second metal layer and the third metal layer are molybdenum or molybdenum. The heat-radiating substrate according to claim 1, comprising an alloy containing 前記第１金属層、前記第４金属層、および前記第５金属層は、前記第２金属層、および前記第３金属層の厚みよりも大きい厚みを有することを特徴とする請求項１または２に記載の放熱基板。   The said 1st metal layer, the said 4th metal layer, and the said 5th metal layer have thickness larger than the thickness of the said 2nd metal layer and the said 3rd metal layer, The said 1 or 2 characterized by the above-mentioned. The heat dissipation board of description. 平面視で、前記複数の第１貫通孔、および前記複数の第２貫通孔は、矩形格子状または斜方格子状に配設されていることを特徴とする請求項１〜３のいずれか１項に記載の放熱基板。   4. The structure according to claim 1, wherein the plurality of first through holes and the plurality of second through holes are arranged in a rectangular lattice shape or an oblique lattice shape in a plan view. The heat dissipation board as described in the item. 平面視で、前記複数の第１貫通孔と、前記複数の第２貫通孔とが重ならないことを特徴とする請求項１〜４のいずれか１項に記載の放熱基板。   5. The heat dissipation substrate according to claim 1, wherein the plurality of first through holes and the plurality of second through holes do not overlap in a plan view. 平面視で、前記複数の第１貫通孔の各々は、前記複数の第２貫通孔のうちの少なくともいずれか１つに重なっていることを特徴とする請求項１〜４のいずれか１項に記載の放熱基板。   5. The device according to claim 1, wherein each of the plurality of first through holes overlaps with at least one of the plurality of second through holes in a plan view. The heat dissipation board described. 平面視で、前記複数の第１貫通孔の面積が互いに等しいとともに、前記複数の第２貫通孔の面積が互いに等しく、前記複数の第２貫通孔の面積は、前記複数の第１貫通孔の面積よりも大きいことを特徴とする請求項１〜６のいずれか１項に記載の放熱基板。   In plan view, the areas of the plurality of first through holes are equal to each other, the areas of the plurality of second through holes are equal to each other, and the areas of the plurality of second through holes are equal to those of the plurality of first through holes. It is larger than an area, The heat dissipation board | substrate of any one of Claims 1-6 characterized by the above-mentioned. 平面視で、前記複数の第１貫通孔、および前記複数の第２貫通孔は、各々、楕円形状または長円形状を有していることを特徴とする請求項１〜７のいずれか１項に記載の放熱基板。   8. The planar view, wherein each of the plurality of first through holes and the plurality of second through holes has an elliptical shape or an oval shape. The heat dissipation board of description. 請求項１〜８のいずれか１項に記載の放熱基板と、
前記放熱基板の前記第４金属層に固定された、絶縁体からなる枠体と、
該枠体に取り付けられた電力供給用端子と、
を含む半導体パッケージ。 The heat dissipation board according to any one of claims 1 to 8,
A frame made of an insulator fixed to the fourth metal layer of the heat dissipation substrate;
A power supply terminal attached to the frame;
Including semiconductor package. 請求項９記載の半導体パッケージと、
該半導体パッケージに搭載された半導体素子と、
を含む半導体装置。 A semiconductor package according to claim 9;
A semiconductor element mounted on the semiconductor package;
A semiconductor device including:
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