JP2017117846A - パワー半導体装置およびその製造方法 - Google Patents
パワー半導体装置およびその製造方法 Download PDFInfo
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- JP2017117846A JP2017117846A JP2015248917A JP2015248917A JP2017117846A JP 2017117846 A JP2017117846 A JP 2017117846A JP 2015248917 A JP2015248917 A JP 2015248917A JP 2015248917 A JP2015248917 A JP 2015248917A JP 2017117846 A JP2017117846 A JP 2017117846A
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- bonding material
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Abstract
Description
実施の形態1に係るパワー半導体装置について説明する。図1および図2に示すように、パワー半導体装置1では、半導体素子11が放熱板3に搭載されている。半導体素子11には、配線部材15aおよび配線部材15bが接続されている。半導体素子11、放熱板3および配線部材15a、15bは、モールド樹脂17によって封止されている。
実施の形態2に係るパワー半導体装置について説明する。図10および図11に示すように、パワー半導体装置1では、少なくとも2つの放熱板3a、3bが距離を隔てて配置されている。放熱板3aおよび放熱板3bのそれぞれは、金属板5a、絶縁基板19および金属板5bからなる。金属板5aと金属板5bとの間に絶縁基板19が介在する。
Claims (7)
- 対向する第1表面および第2表面を有する第1パワー素子を含む半導体素子と、
前記第1パワー素子の前記第1表面に接合された第1導体板を含む放熱板と、
前記第1パワー素子の前記第2表面に接合されて前記第1パワー素子に電気的に接続される第1配線部材を含む導体部と、
前記第1パワー素子の前記第1表面と前記第1導体板とを接合する第1接合材、および、前記第1パワー素子の前記第2表面と前記第1配線部材とを接合する第2接合材を含む接合材と、
前記半導体素子、前記導体部および前記放熱板を封止する封止材と
を有し、
前記接合材は、金属間化合物を含み、
前記第2接合材は、
前記第1パワー素子の前記第2表面と前記第1配線部材との間に介在する第1部と、
前記第1配線部材を貫通して前記第1部に繋がる第2部と
を備えた、パワー半導体装置。 - 前記導体部は第2配線部材を含み、
前記接合材は、前記第1導体板と前記第2配線部材とを接合する第3接合材を含み、
前記第3接合材は、
前記第1導体板と前記第2配線部材との間に介在する第3部と、
前記第2配線部材を貫通して前記第3部に繋がる第4部と
を含む、請求項1記載のパワー半導体装置。 - 前記半導体素子は、対向する第3表面および第4表面を有する第2パワー素子を含み、
前記放熱板は、前記第1導体板と距離を隔てられて、前記第2パワー素子の前記第4表面に接合された第2導体板を含み、
前記接合材は、
前記第2パワー素子の前記第3表面と前記第2導体板とを接合する第4接合材と、
前記第2パワー素子の前記第4表面と前記第2配線部材とを接合する第5接合材と
を含み、
前記第5接合材は、
前記第2パワー素子の前記第4表面と前記第2配線部材との間に介在する第5部と、
前記第2配線部材を貫通して前記第5部に繋がる第6部と
を含む、請求項2記載のパワー半導体装置。 - 前記接合材は、前記金属間化合物として、銅(Cu)、ニッケル(Ni)および銀(Ag)から選ばれる少なくともいずれかの金属と、スズ(Sn)との金属間化合物を含む、請求項1〜3のいずれか1項に記載のパワー半導体装置。
- 前記半導体素子は、絶縁ゲートバイポーラトランジスタ、ダイオードおよび電界効果トランジスタの少なくともいずれかを含む、請求項1〜4のいずれか1項に記載のパワー半導体装置。
- 前記放熱板は、絶縁金属層および絶縁基板のいずれかを含む、請求項1〜5のいずれか1項に記載のパワー半導体装置。
- 第1導体板を含む放熱板を用意する工程と、
前記第1導体板に第1接合材を塗布する工程と、
前記第1接合材の上に半導体素子を載置する工程と、
前記半導体素子に第2接合材第1部を塗布する工程と、
貫通孔が形成された第1配線部材を用意する工程と、
前記貫通孔に前記第2接合材第1部が露出する態様で、前記第1配線部材を前記第2接合材第1部の上に載置し、前記第1配線部材を保持する工程と、
前記第2接合材第1部に達する態様で、前記貫通孔に第2接合材第2部を充填塗布する工程と、
前記第1接合材、前記第2接合材第1部および前記第2接合材第2部に、熱処理を施す工程と、
前記半導体素子、前記放熱板および前記第1配線部材を金型に配置する工程と、
前記金型内に封止材を充填することによって、前記半導体素子、前記放熱板および前記第1配線部材を封止する工程と、
前記封止材によって封止された、前記半導体素子、前記放熱板および前記第1配線部材を、前記金型から取り出す工程と
を有し、
前記第1接合材、前記第2接合材第1部および前記第2接合材第2部のそれぞれを塗布する工程では、銅(Cu)、ニッケル(Ni)および銀(Ag)から選ばれる少なくともいずれかの金属の粒子と、スズ(Sn)の粒子とを含む材料が用いられ、
前記熱処理を施す工程では、前記いずれかの金属と前記スズ(Sn)との金属間化合物が形成される、パワー半導体装置の製造方法。
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JP2015095545A (ja) * | 2013-11-12 | 2015-05-18 | 三菱電機株式会社 | 半導体モジュールとその製造方法 |
JP2015167193A (ja) * | 2014-03-04 | 2015-09-24 | アルファーデザイン株式会社 | 金属微粉末ペーストを用いた接合方法 |
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DE102023118237A1 (de) | 2022-07-20 | 2024-01-25 | Mitsubishi Electric Corporation | Halbleitervorrichtung, Verfahren zum Herstellen einer Halbleitervorrichtung und Leistungsumwandlungsvorrichtung |
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DE102016224068A1 (de) | 2018-06-07 |
US10475721B2 (en) | 2019-11-12 |
US20190214326A1 (en) | 2019-07-11 |
JP6721329B2 (ja) | 2020-07-15 |
US10283430B2 (en) | 2019-05-07 |
DE102016224068B4 (de) | 2023-06-22 |
CN106898590A (zh) | 2017-06-27 |
US20170178995A1 (en) | 2017-06-22 |
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