JP2017103180A - Copper paste non-pressure conjugation, conjugation, and semiconductor device - Google Patents
Copper paste non-pressure conjugation, conjugation, and semiconductor device Download PDFInfo
- Publication number
- JP2017103180A JP2017103180A JP2015237740A JP2015237740A JP2017103180A JP 2017103180 A JP2017103180 A JP 2017103180A JP 2015237740 A JP2015237740 A JP 2015237740A JP 2015237740 A JP2015237740 A JP 2015237740A JP 2017103180 A JP2017103180 A JP 2017103180A
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- Prior art keywords
- copper paste
- bonding
- copper
- pressureless
- acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 229910052802 copper Inorganic materials 0.000 title claims abstract description 341
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- 239000004065 semiconductor Substances 0.000 title claims description 59
- 230000021615 conjugation Effects 0.000 title abstract 6
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- 238000009835 boiling Methods 0.000 claims abstract description 72
- 239000002904 solvent Substances 0.000 claims abstract description 66
- 239000002923 metal particle Substances 0.000 claims abstract description 36
- 239000002612 dispersion medium Substances 0.000 claims description 47
- 238000005304 joining Methods 0.000 claims description 46
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- 238000000034 method Methods 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 26
- 238000004519 manufacturing process Methods 0.000 claims description 14
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- 125000004185 ester group Chemical group 0.000 claims description 2
- 125000001033 ether group Chemical group 0.000 claims description 2
- 239000002270 dispersing agent Substances 0.000 abstract description 3
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Abstract
Description
本発明は、無加圧接合用銅ペースト、並びにそれを用いた接合体、及び半導体装置に関する。 The present invention relates to a copper paste for pressureless bonding, a bonded body using the same, and a semiconductor device.
半導体装置を製造する際、半導体素子とリードフレーム等（支持部材）とを接合させるため、さまざまな接合材が用いられている。半導体装置の中でも、１５０℃以上の高温で動作させるパワー半導体、ＬＳＩ等の接合には、接合材として高融点鉛はんだが用いられてきた。近年、半導体素子の高容量化及び省スペース化により動作温度が高融点鉛はんだの融点近くまで上昇しており、接続信頼性を確保することが難しくなってきている。一方で、ＲｏＨＳ規制強化に伴い、鉛を含有しない接合材が求められている。 When manufacturing a semiconductor device, various bonding materials are used for bonding a semiconductor element and a lead frame (support member). Among semiconductor devices, high melting point lead solder has been used as a bonding material for bonding power semiconductors, LSIs, and the like that are operated at a high temperature of 150 ° C. or higher. In recent years, due to the increase in capacity and space saving of semiconductor elements, the operating temperature has increased to near the melting point of high melting point lead solder, and it has become difficult to ensure connection reliability. On the other hand, with the strengthening of RoHS regulations, a bonding material not containing lead is required.
これまでにも、鉛はんだ以外の材料を用いた半導体素子の接合が検討されている。例えば、下記特許文献１には、銀ナノ粒子を焼結させ、焼結銀層を形成する技術が提案されている。このような焼結銀はパワーサイクルに対する接続信頼性が高いことが知られている（非特許文献１）。 So far, joining of semiconductor elements using materials other than lead solder has been studied. For example, Patent Document 1 below proposes a technique for sintering silver nanoparticles to form a sintered silver layer. It is known that such sintered silver has high connection reliability with respect to the power cycle (Non-Patent Document 1).
更に別の材料として、銅粒子を焼結させ、焼結銅層を形成する技術も提案されている。例えば、下記特許文献２には、銅ナノ粒子と、銅マイクロ粒子もしくは銅サブマイクロ粒子、あるいはそれら両方を含む接合材が開示されており、この接合材が無加圧で部材を接合できることも記載されている。 As another material, a technique for sintering a copper particle to form a sintered copper layer has also been proposed. For example, Patent Document 2 below discloses a bonding material containing copper nanoparticles and copper microparticles or copper submicroparticles, or both, and also describes that this bonding material can bond members without pressure. Has been.
上記特許文献１に記載の方法は、高い接続信頼性を得るには焼結銀層の緻密化が必須であるため、加圧を伴う熱圧着プロセスが必要となる。加圧を伴う熱圧着プロセスを行う場合、生産効率の低下、歩留まりの低下等の課題がある。更に、銀ナノ粒子を用いる場合、銀による材料コストの著しい増加等が問題となる。 Since the method described in Patent Document 1 requires densification of the sintered silver layer in order to obtain high connection reliability, a thermocompression process involving pressurization is required. When performing a thermocompression bonding process involving pressurization, there are problems such as a decrease in production efficiency and a decrease in yield. Furthermore, when silver nanoparticles are used, a significant increase in material cost due to silver becomes a problem.
上記特許文献２に記載の方法は、無加圧で焼結を行っているが、以下の点で実用に供するには未だ充分ではない。すなわち、銅ナノ粒子は酸化抑制及び分散性の向上のために保護剤で表面を修飾する必要があるが、銅ナノ粒子は比表面積が大きいため、銅ナノ粒子を主成分とする接合材においては表面保護剤の配合量が増える傾向にある。また、分散性を確保するために分散媒の配合量が増える傾向にある。そのため、上記特許文献２に記載の接合材は、保管又は塗工等の供給安定性のため、表面保護剤又は分散媒の割合を多くしており、焼結時の体積収縮が大きくなりやすく、また焼結後の緻密度が低下しやすい傾向にあり焼結体強度の確保が難しい。 Although the method described in Patent Document 2 performs sintering without applying pressure, it is still not sufficient for practical use in the following points. That is, the copper nanoparticles need to be modified with a protective agent to suppress oxidation and improve dispersibility. However, since copper nanoparticles have a large specific surface area, in a bonding material mainly composed of copper nanoparticles, The amount of the surface protective agent tends to increase. In addition, the amount of the dispersion medium tends to increase in order to ensure dispersibility. Therefore, the bonding material described in Patent Document 2 has a large proportion of the surface protective agent or the dispersion medium for supply stability such as storage or coating, and the volume shrinkage during sintering tends to be large. Moreover, the density after sintering tends to decrease, and it is difficult to ensure the strength of the sintered body.
また、接合材を用いた無加圧での接合は、接合される部材同士の材質が等しいか近い場合には良好に行われるが、接合される部材同士の材質が異なる場合には接合力が大きく低下しやすい。本発明者らの検討によると、例えば、被着面に銅を有する銅板と、被着面にニッケルを有する銅ブロックとを接合する場合と、被着面に銅を有する銅板と、被着面にニッケルを有するシリコンチップとを接合する場合とでは、無加圧の焼結条件において接合用銅ペーストの組成によっては後者の接合強度が大きく低下する場合のあることが判明した。すなわち、銅ブロックとシリコンチップのように、熱膨張率の異なる部材同士を無化圧で接合する場合において接合不良が生じることがある。 Further, the non-pressure joining using the joining material is performed well when the materials of the members to be joined are equal or close to each other, but the joining force is increased when the materials of the members to be joined are different. It is easy to drop greatly. According to the study by the present inventors, for example, when a copper plate having copper on the deposition surface and a copper block having nickel on the deposition surface are joined, a copper plate having copper on the deposition surface, and a deposition surface It was found that the bonding strength of the latter may be greatly reduced depending on the composition of the copper paste for bonding under pressureless sintering conditions. That is, when a member having a different coefficient of thermal expansion, such as a copper block and a silicon chip, is bonded with no pressure, bonding failure may occur.
本発明は、熱膨張率の異なる部材同士を無加圧で接合する場合であっても、充分な接合強度を得ることができる無加圧接合用銅ペーストを提供することを目的とする。本発明は更に、無加圧接合用銅ペーストを用いる接合体及び半導体装置、並びにこれらの製造方法を提供することも目的とする。 An object of the present invention is to provide a pressure-free bonding copper paste that can obtain sufficient bonding strength even when members having different thermal expansion coefficients are bonded without pressure. It is another object of the present invention to provide a joined body and a semiconductor device using a pressure-free joining copper paste, and a method for producing them.
上記課題を解決するために本発明者らは以下の検討を行った。まず、接合用銅ペーストによる接合では、接合時の乾燥工程、又は焼結工程における昇温時に、分散媒が揮発した後、乾燥した銅系粒子の堆積物が残されることになる。乾燥した銅系粒子の堆積物は、粒子間に分散媒の凝集力等の結合力が無く、非常に脆弱な状態にある。この際、接合される部材同士の材質が異なる場合には、室温と乾燥工程温度の温度差、又は室温と焼結工程温度の温度差により、接合される部材間に熱膨張率差による剪断力が働き、銅系粒子の堆積物層は剥離しやすくなることが考えられる。焼結工程において部材に積極的に加圧を行っていれば、剥離は潰されて銅系粒子の堆積物の焼結物と部材とが接合されることになるが、無加圧の場合には剥離したままとなる可能性がある。このような剥離を抑制する観点から、昇温時の堆積物の状態を制御する検討行った結果、分散媒として特定の溶媒を特定の割合で用いることにより、熱膨張率の異なる部材同士を無加圧で接合する場合であっても、充分な接合強度を得ることができることを見出し、本発明を完成するに至った。 In order to solve the above problems, the present inventors have conducted the following investigation. First, in the joining with the joining copper paste, after the dispersion medium is volatilized at the time of the drying process at the time of joining or the temperature rise in the sintering process, a deposit of dried copper-based particles is left. The dried copper-based particle deposits are in a very fragile state because there is no bonding force such as cohesive force of the dispersion medium between the particles. At this time, if the materials of the members to be joined are different, the shear force due to the difference in thermal expansion coefficient between the members to be joined due to the temperature difference between the room temperature and the drying process temperature, or the temperature difference between the room temperature and the sintering process temperature. It is considered that the deposit layer of the copper-based particles can be easily peeled off. If the member is positively pressurized in the sintering process, the delamination will be crushed and the sintered product of the copper-based particle deposit will be joined to the member. May remain detached. From the viewpoint of suppressing such separation, as a result of studies to control the state of deposits at the time of temperature rise, by using a specific solvent at a specific ratio as a dispersion medium, members having different thermal expansion coefficients can be used. It has been found that sufficient bonding strength can be obtained even when bonding is performed under pressure, and the present invention has been completed.
本発明は、金属粒子と、分散媒と、を含む無加圧接合用銅ペーストであって、金属粒子が、体積平均粒径が０．０１μｍ以上０．８μｍ以下のサブマイクロ銅粒子と、体積平均粒径が２．０μｍ以上５０μｍ以下のマイクロ銅粒子とを含み、分散媒が３００℃以上の沸点を有する溶媒を含み、３００℃以上の沸点を有する溶媒の含有量が、無加圧接合用銅ペーストの全質量を基準として、２質量％以上である、無加圧接合用銅ペーストを提供する。 The present invention is a non-pressure bonding copper paste containing metal particles and a dispersion medium, wherein the metal particles have a volume average particle diameter of 0.01 μm or more and 0.8 μm or less, and a volume average A copper paste for pressure-free joining, comprising a micro copper particle having a particle size of 2.0 μm or more and 50 μm or less, a dispersion medium containing a solvent having a boiling point of 300 ° C. or more, and a content of the solvent having a boiling point of 300 ° C. or more A copper paste for pressureless bonding, which is 2% by mass or more based on the total mass of
本明細書において、「無加圧」とは、接合する部材の自重、又はその自重に加え、０．０１ＭＰａ以下の圧力を受けている状態を意味する。 In this specification, “non-pressurized” means a state in which a pressure of 0.01 MPa or less is received in addition to the self-weight of the members to be joined or the self-weight.
本発明はまた、金属粒子と、分散媒と、を含む無加圧接合用銅ペーストであって、金属粒子が、体積平均粒径が０．０１μｍ以上０．８μｍ以下のサブマイクロ銅粒子と、体積平均粒径が２．０μｍ以上５０μｍ以下のマイクロ銅粒子とを含み、分散媒が３００℃以上の沸点を有する溶媒を含み、３００℃以上の沸点を有する溶媒の含有量が、無加圧接合用銅ペーストの全容量を基準として、８体積％以上である、無加圧接合用銅ペーストを提供する。 The present invention is also a non-pressure bonding copper paste containing metal particles and a dispersion medium, wherein the metal particles have a volume average particle diameter of 0.01 μm or more and 0.8 μm or less, and a volume of sub-micro copper particles. Non-pressure bonding copper containing a copper particle having a mean particle size of 2.0 μm or more and 50 μm or less, a dispersion medium containing a solvent having a boiling point of 300 ° C. or more, and a solvent having a boiling point of 300 ° C. or more. There is provided a copper paste for pressureless bonding that is 8% by volume or more based on the total capacity of the paste.
本発明の無加圧接合用銅ペーストによれば、熱膨張率が異なる部材同士を無化圧で接合する場合であっても、充分な接合強度を得ることができる。このような効果が得られる理由について本発明者らは以下のとおり推察する。すなわち、分散媒が３００℃以上の沸点を有する溶媒を特定量含むことで、接合時の昇温過程で所定量の３００℃以上の沸点を有する溶媒が部材間にある銅ペースト中に残ることができると考えられる。この残留溶媒が銅ペーストに可撓性及び付着姓を与えることにより、熱膨張率差による剪断力が働いた場合であっても部材間にある銅ペーストが変形・追随可能となり、それぞれの部材に剥離無く接合できたものと考えられる。 According to the copper paste for pressureless bonding of the present invention, sufficient bonding strength can be obtained even when members having different thermal expansion coefficients are bonded with no pressure. The present inventors infer the reason why such an effect is obtained as follows. That is, when the dispersion medium contains a specific amount of a solvent having a boiling point of 300 ° C. or higher, a predetermined amount of the solvent having a boiling point of 300 ° C. or higher may remain in the copper paste between the members in the temperature rising process during bonding. It is considered possible. This residual solvent gives the copper paste flexibility and adhesion, so that even when shearing force due to the difference in thermal expansion coefficient is applied, the copper paste between the members can be deformed and followed, It is thought that it was able to join without peeling.
本発明において、上記３００℃以上の沸点を有する溶媒が、ヒドロキシ基、エーテル基、及びエステル基からなる群から選択された少なくとも一種の基を有していてもよい。無加圧接合用銅ペーストがこのような溶媒を含む場合、有機酸、有機アミン、ヒドロキシル基含有ポリマー、ポリビニルピロリドン等といったハンセン溶解度パラメータが近い表面処理剤を用いることができる。 In the present invention, the solvent having a boiling point of 300 ° C. or higher may have at least one group selected from the group consisting of a hydroxy group, an ether group, and an ester group. When the pressure-free bonding copper paste includes such a solvent, a surface treatment agent having a Hansen solubility parameter such as an organic acid, an organic amine, a hydroxyl group-containing polymer, or polyvinylpyrrolidone can be used.
本発明の無加圧接合用銅ペーストは、２つの部材間に存在する無加圧接合用銅ペーストを２５０℃以上３５０℃未満の温度で加熱したときに、マイクロ銅粒子及びサブマイクロ銅粒子が焼結して金属結合を形成し、２つの部材間がダイシェア強度１０ＭＰａ以上、熱伝導率１００Ｗ／（ｍ・Ｋ）以上で接合されるものであってもよい。このような無加圧接合用銅ペーストであれば、熱膨張率が異なる部材同士の接合時に、充分な接合強度が得られやすい。 The copper paste for pressureless bonding of the present invention is sintered when the copper paste for pressureless bonding existing between two members is heated at a temperature of 250 ° C. or higher and lower than 350 ° C. Then, a metal bond may be formed, and the two members may be joined with a die shear strength of 10 MPa or more and a thermal conductivity of 100 W / (m · K) or more. With such a pressure-free bonding copper paste, sufficient bonding strength is easily obtained when members having different coefficients of thermal expansion are bonded.
本発明の無加圧接合用銅ペーストは、２５℃から３００℃まで昇温させたときに残存する３００℃以上の沸点を有する溶媒の含有量が、３００℃まで昇温させたときの無加圧接合用銅ペーストの質量を基準として、１質量％以上であってもよい。この場合、無加圧接合用銅ペースト組成物の可撓性を維持しやすく、熱膨張率の異なる部材同士を接合する場合に、無加圧接合用銅ペーストが部材に対して変形・追随しやすくなるため、接合強度を向上させることが容易となる傾向にある。 The copper paste for pressureless bonding of the present invention is a pressureless bonding when the content of the solvent having a boiling point of 300 ° C. or higher remaining when the temperature is raised from 25 ° C. to 300 ° C. is raised to 300 ° C. It may be 1% by mass or more based on the mass of the composite copper paste. In this case, it is easy to maintain the flexibility of the copper paste composition for pressureless bonding, and when bonding members having different coefficients of thermal expansion, the copper paste for pressureless bonding easily deforms and follows the member. Therefore, it tends to be easy to improve the bonding strength.
本発明はまた、第一の部材と、第一の部材とは異なる熱膨張率を有する第二の部材と、第一の部材と第二の部材とを接合する上記無加圧接合用銅ペーストの焼結体と、を備える、接合体を提供する。 The present invention also provides the first member, the second member having a coefficient of thermal expansion different from that of the first member, and the non-pressure bonding copper paste for joining the first member and the second member. And a sintered body.
本発明の接合体によれば、上記無加圧接合用銅ペーストの焼結体によって接合されていることにより、異なる熱膨張率を有する部材同士であっても、部材同士が充分な接合強度で接合された接合体となり得る。 According to the joined body of the present invention, even when the members having different coefficients of thermal expansion are joined together by the sintered body of the copper paste for pressureless joining, the members are joined with sufficient joining strength. It can become the joined body.
本発明はまた、第一の部材、該第一の部材の自重が働く方向側に、上記無加圧接合用銅ペースト、及び第一の部材とは異なる熱膨張率を有する第二の部材がこの順に積層されている積層体を用意し、無加圧接合用銅ペーストを、第一の部材の自重、又は前記第一の部材の自重及び０．０１ＭＰａ以下の圧力を受けた状態で焼結する工程を備える接合体の製造方法を提供する。 The present invention also includes a first member, a copper paste for pressureless bonding, and a second member having a thermal expansion coefficient different from that of the first member on the side in which the weight of the first member acts. A step of preparing a laminate that is sequentially laminated and sintering a copper paste for pressureless bonding in a state of receiving the weight of the first member or the weight of the first member and a pressure of 0.01 MPa or less. The manufacturing method of a joined body provided with this is provided.
本発明の接合体の製造方法によれば、上記本発明の無加圧接合用銅ペーストを用いることにより、異なる熱膨張率を有する部材同士であっても、部材同士が充分な接合力で接合され、接続信頼性に優れた接合体を製造することができる。 According to the method for manufacturing a joined body of the present invention, even when the members having different coefficients of thermal expansion are used, the members are joined with a sufficient joining force by using the copper paste for pressureless joining of the present invention. Thus, it is possible to manufacture a bonded body having excellent connection reliability.
本発明はまた、第一の部材と、第一の部材とは異なる熱膨張率を有する第二の部材と、第一の部材と第二の部材とを接合する上記無加圧接合用銅ペーストの焼結体と、を備え、第一の部材及び第二の部材の少なくとも一方が半導体素子である、半導体装置を提供する。 The present invention also provides the first member, the second member having a coefficient of thermal expansion different from that of the first member, and the non-pressure bonding copper paste for joining the first member and the second member. A semiconductor device, wherein at least one of the first member and the second member is a semiconductor element.
本発明の半導体装置の製造方法によれば、上記本発明の無加圧接合用銅ペーストを用いることにより、半導体装置を構成する部材が異なる熱膨張率を有する場合であっても、部材同士が充分な接合力で接合され、接続信頼性に優れた半導体装置を製造することができる。 According to the method for manufacturing a semiconductor device of the present invention, by using the copper paste for pressureless bonding of the present invention, the members are sufficient even if the members constituting the semiconductor device have different coefficients of thermal expansion. It is possible to manufacture a semiconductor device that is bonded with an appropriate bonding force and has excellent connection reliability.
本発明は、熱膨張率の異なる部材同士を無加圧で接合する場合であっても、充分な接合強度を得ることができる無加圧接合用銅ペーストを提供することができる。本発明は更に、無加圧接合用銅ペーストを用いる接合体及び半導体装置、並びにこれらの製造方法を提供することができる。 The present invention can provide a pressure-free bonding copper paste that can obtain sufficient bonding strength even when members having different thermal expansion coefficients are bonded without pressure. The present invention can further provide a bonded body and a semiconductor device using a copper paste for pressureless bonding, and a method for producing them.
以下、本発明を実施するための形態（以下、「本実施形態」という。）について詳細に説明する。本発明は、以下の実施形態に限定されるものではない。 Hereinafter, a mode for carrying out the present invention (hereinafter referred to as “the present embodiment”) will be described in detail. The present invention is not limited to the following embodiments.
＜無加圧接合用銅ペースト＞
本実施形態の無加圧接合用銅ペーストは、金属粒子と、分散媒と、を含む無加圧接合用銅ペーストであって、金属粒子がサブマイクロ銅粒子及びマイクロ銅粒子を含む。
<Copper paste for pressureless bonding>
The pressureless bonding copper paste of the present embodiment is a pressureless bonding copper paste including metal particles and a dispersion medium, and the metal particles include sub-micro copper particles and micro copper particles.
（金属粒子）
本実施形態に係る金属粒子としては、サブマイクロ銅粒子、マイクロ銅粒子、これらの銅粒子以外のその他の金属粒子等が挙げられる。
(Metal particles)
Examples of the metal particles according to the present embodiment include sub-micro copper particles, micro-copper particles, and other metal particles other than these copper particles.
（サブマイクロ銅粒子）
サブマイクロ銅粒子としては、２５０℃以上３５０℃以下の温度範囲で焼結性を有する銅粒子であればよい。サブマイクロ銅粒子としては、粒径が０．０１μｍ以上０．８μｍ以下の銅粒子を含むものが挙げられ、例えば、体積平均粒径が０．０１μｍ以上０．８μｍ以下の銅粒子の銅粒子を用いることができる。サブマイクロ銅粒子の体積平均粒径が０．０１μｍ以上であれば、サブマイクロ銅粒子の合成コストの抑制、良好な分散性、表面処理剤の使用量の抑制といった効果が得られやすくなる。サブマイクロ銅粒子の体積平均粒径が０．８μｍ以下であれば、サブマイクロ銅粒子の焼結性が優れるという効果が得られやすくなる。より一層上記効果を奏するという観点から、サブマイクロ銅粒子の体積平均粒径の上限は、０．６μｍ以下であってもよく、０．５μｍ以下であってもよく、０．４μｍ以下であってもよい。また、サブマイクロ銅粒子の体積平均粒径の下限は、０．０２μｍ以上であってもよく、０．０５μｍ以上であってもよく、０．１μｍ以上であってもよい。サブマイクロ銅粒子の体積平均粒径としては、例えば、０．０１μｍ以上０．５μｍ以下であってもよく、０．１２μｍ以上０．８μｍ以下であってもよく、０．１５μｍ以上０．８μｍ以下であってもよく、０．１５μｍ以上０．６μｍ以下であってもよく、０．２μｍ以上０．５μｍ以下であってもよく、０．３μｍ以上０．４５μｍ以下であってもよい。
(Sub-micro copper particles)
The sub-micro copper particles may be copper particles having sinterability in a temperature range of 250 ° C. or higher and 350 ° C. or lower. Examples of the sub-micro copper particles include those containing copper particles having a particle size of 0.01 μm or more and 0.8 μm or less. For example, copper particles of a copper particle having a volume average particle size of 0.01 μm or more and 0.8 μm or less Can be used. If the volume average particle diameter of the sub-micro copper particles is 0.01 μm or more, effects such as suppression of the synthesis cost of the sub-micro copper particles, good dispersibility, and suppression of the use amount of the surface treatment agent are easily obtained. If the volume average particle diameter of the sub-micro copper particles is 0.8 μm or less, an effect that the sinterability of the sub-micro copper particles is excellent is easily obtained. From the standpoint of further exerting the above effects, the upper limit of the volume average particle diameter of the sub-micro copper particles may be 0.6 μm or less, may be 0.5 μm or less, and may be 0.4 μm or less. Also good. In addition, the lower limit of the volume average particle size of the sub-micro copper particles may be 0.02 μm or more, 0.05 μm or more, or 0.1 μm or more. The volume average particle size of the sub-micro copper particles may be, for example, from 0.01 μm to 0.5 μm, from 0.12 μm to 0.8 μm, and from 0.15 μm to 0.8 μm. It may be 0.15 μm or more, 0.6 μm or less, 0.2 μm or more and 0.5 μm or less, or 0.3 μm or more and 0.45 μm or less.
なお、本願明細書において体積平均粒径とは、５０％体積平均粒径を意味する。銅粒子の体積平均粒径を求める場合、原料となる銅粒子、又は無加圧接合用銅ペーストから揮発成分を除去した乾燥銅粒子を、分散剤を用いて分散媒に分散させたものを光散乱法粒度分布測定装置（例えば、島津ナノ粒子径分布測定装置（ＳＡＬＤ−７５００ｎａｎｏ，株式会社島津製作所製））で測定する方法等により求めることができる。光散乱法粒度分布測定装置を用いる場合、分散媒としては、ヘキサン、トルエン、α−テルピネオール、４−メチル−１，３−ジオキソラン−２−オン等を用いることができる。 In the present specification, the volume average particle diameter means 50% volume average particle diameter. When determining the volume average particle size of copper particles, light scattering is performed by dispersing copper particles as raw materials or dry copper particles from which volatile components have been removed from pressure-free bonding copper paste in a dispersion medium using a dispersant. It can be determined by a method of measuring with a method particle size distribution measuring device (for example, a Shimadzu nano particle size distribution measuring device (SALD-7500 nano, manufactured by Shimadzu Corporation)). When using a light scattering particle size distribution analyzer, hexane, toluene, α-terpineol, 4-methyl-1,3-dioxolan-2-one, or the like can be used as a dispersion medium.
サブマイクロ銅粒子の含有量は、金属粒子の全質量を基準として、２０質量％以上９０質量％以下であってもよく、３０質量％以上９０質量％以下であってもよく、３５質量％以上８５質量％以下であってもよく、４０質量％以上８０質量％以下であってもよい。サブマイクロ銅粒子の含有量が上記範囲内であれば、無加圧接合用銅ペーストを焼結させて製造される接合体の接合強度を確保することが容易となり、無加圧接合用銅ペーストを半導体素子の接合に用いる場合は半導体装置が良好なダイシェア強度及び接続信頼性を示す傾向にある。 The content of the sub-micro copper particles may be 20% by mass or more and 90% by mass or less, 30% by mass or more and 90% by mass or less, or 35% by mass or more based on the total mass of the metal particles. 85 mass% or less may be sufficient, and 40 mass% or more and 80 mass% or less may be sufficient. If the content of the sub-micro copper particles is within the above range, it becomes easy to secure the bonding strength of the joined body produced by sintering the copper paste for pressureless bonding, and the copper paste for pressureless bonding is used as a semiconductor. When used for joining elements, semiconductor devices tend to exhibit good die shear strength and connection reliability.
サブマイクロ銅粒子の含有量は、サブマイクロ銅粒子の質量及びマイクロ銅粒子の質量の合計を基準として、２０質量％以上９０質量％以下であることが好ましい。サブマイクロ銅粒子の上記含有量が２０質量％以上であれば、マイクロ銅粒子の間を充分に充填することができ、無加圧接合用銅ペーストを焼結させて製造される接合体の接合強度を確保することが容易となり、無加圧接合用銅ペーストを半導体素子の接合に用いる場合は半導体装置が良好なダイシェア強度及び接続信頼性を示す傾向にある。サブマイクロ銅粒子の含有量が９０質量％以下であれば、無加圧接合用銅ペーストを焼結した時の体積収縮を充分に抑制できるため、無加圧接合用銅ペーストを焼結させて製造される接合体の接合強度を確保することが容易となり、無加圧接合用銅ペーストを半導体素子の接合に用いる場合は半導体装置が良好なダイシェア強度及び接続信頼性を示す傾向にある。より一層上記効果を奏するという観点から、サブマイクロ銅粒子の含有量は、サブマイクロ銅粒子の質量及びマイクロ銅粒子の質量の合計を基準として、３０質量％以上８５質量％以下であってもよく、３５質量％以上８５質量％以下であってもよく、４０質量％以上８０質量％以下であってもよい。 The content of the sub-micro copper particles is preferably 20% by mass or more and 90% by mass or less based on the total mass of the sub-micro copper particles and the mass of the micro-copper particles. If the content of the sub-micro copper particles is 20% by mass or more, the space between the micro-copper particles can be sufficiently filled, and the joining strength of the joined body produced by sintering the pressure-free joining copper paste. When the copper paste for pressureless bonding is used for bonding semiconductor elements, the semiconductor device tends to exhibit good die shear strength and connection reliability. If the content of the sub-micro copper particles is 90% by mass or less, volume shrinkage when sintering the copper paste for pressureless bonding can be sufficiently suppressed. Therefore, it is produced by sintering the copper paste for pressureless bonding. It is easy to ensure the bonding strength of the bonded body, and when the non-pressure bonding copper paste is used for bonding semiconductor elements, the semiconductor device tends to exhibit good die shear strength and connection reliability. From the viewpoint of further achieving the above effects, the content of the sub-micro copper particles may be 30% by mass or more and 85% by mass or less based on the total mass of the sub-micro copper particles and the mass of the micro-copper particles. 35 mass% or more and 85 mass% or less may be sufficient, and 40 mass% or more and 80 mass% or less may be sufficient.
サブマイクロ銅粒子の形状は、特に限定されるものではない。サブマイクロ銅粒子の形状としては、例えば、球状、塊状、針状、フレーク状、略球状及びこれらの凝集体が挙げられる。分散性及び充填性の観点から、サブマイクロ銅粒子の形状は、球状、略球状、フレーク状であってもよく、燃焼性、分散性、フレーク状マイクロ粒子との混合性等の観点から、球状又は略球状であってもよい。本明細書において、「フレーク状」とは、板状、鱗片状等の平板状の形状を包含する。 The shape of the sub-micro copper particles is not particularly limited. Examples of the shape of the sub-micro copper particles include a spherical shape, a lump shape, a needle shape, a flake shape, a substantially spherical shape, and an aggregate thereof. From the viewpoints of dispersibility and filling properties, the shape of the sub-micro copper particles may be spherical, substantially spherical, or flaky. From the viewpoint of combustibility, dispersibility, miscibility with flaky microparticles, etc., Alternatively, it may be approximately spherical. In the present specification, the “flakes” include flat shapes such as plates and scales.
サブマイクロ銅粒子は、分散性、充填性、及びフレーク状マイクロ粒子との混合性の観点から、アスペクト比が５以下であってもよく、３以下であってもよい。本明細書において、「アスペクト比」とは、粒子の長辺／厚みを示す。粒子の長辺及び厚みの測定は、例えば、粒子のＳＥＭ像から求めることができる。 The sub-micro copper particles may have an aspect ratio of 5 or less or 3 or less from the viewpoints of dispersibility, filling properties, and miscibility with the flaky micro particles. In this specification, “aspect ratio” indicates the long side / thickness of a particle. The measurement of the long side and thickness of the particle can be obtained, for example, from the SEM image of the particle.
サブマイクロ銅粒子は、特定の表面処理剤で処理されていてもよい。特定の表面処理剤としては、例えば、炭素数２〜１８の有機酸が挙げられる。炭素数２〜１８の有機酸としては、例えば、酢酸、プロパン酸、ブタン酸、ペンタン酸、ヘキサン酸、ヘプタン酸、カプリル酸、メチルヘプタン酸、エチルヘキサン酸、プロピルペンタン酸、ペラルゴン酸、メチルオクタン酸、エチルヘプタン酸、プロピルヘキサン酸、カプリン酸、メチルノナン酸、エチルオクタン酸、プロピルヘプタン酸、ブチルヘキサン酸、ウンデカン酸、メチルデカン酸、エチルノナン酸、プロピルオクタン酸、ブチルヘプタン酸、ラウリン酸、メチルウンデカン酸、エチルデカン酸、プロピルノナン酸、ブチルオクタン酸、ペンチルヘプタン酸、トリデカン酸、メチルドデカン酸、エチルウンデカン酸、プロピルデカン酸、ブチルノナン酸、ペンチルオクタン酸、ミリスチン酸、メチルトリデカン酸、エチルドデカン酸、プロピルウンデカン酸、ブチルデカン酸、ペンチルノナン酸、ヘキシルオクタン酸、ペンタデカン酸、メチルテトラデカン酸、エチルトリデカン酸、プロピルドデカン酸、ブチルウンデカン酸、ペンチルデカン酸、ヘキシルノナン酸、パルミチン酸、メチルペンタデカン酸、エチルテトラデカン酸、プロピルトリデカン酸、ブチルドデカン酸、ペンチルウンデカン酸、ヘキシルデカン酸、ヘプチルノナン酸、ヘプタデカン酸、オクタデカン酸、メチルシクロヘキサンカルボン酸、エチルシクロヘキサンカルボン酸、プロピルシクロヘキサンカルボン酸、ブチルシクロヘキサンカルボン酸、ペンチルシクロヘキサンカルボン酸、ヘキシルシクロヘキサンカルボン酸、ヘプチルシクロヘキサンカルボン酸、オクチルシクロヘキサンカルボン酸、ノニルシクロヘキサンカルボン酸等の飽和脂肪酸；オクテン酸、ノネン酸、メチルノネン酸、デセン酸、ウンデセン酸、ドデセン酸、トリデセン酸、テトラデセン酸、ミリストレイン酸、ペンタデセン酸、ヘキサデセン酸、パルミトレイン酸、サビエン酸、オレイン酸、バクセン酸、リノール酸、リノレイン酸、リノレン酸等の不飽和脂肪酸；テレフタル酸、ピロメリット酸、ｏ−フェノキシ安息香酸、メチル安息香酸、エチル安息香酸、プロピル安息香酸、ブチル安息香酸、ペンチル安息香酸、ヘキシル安息香酸、ヘプチル安息香酸、オクチル安息香酸、ノニル安息香酸等の芳香族カルボン酸が挙げられる。有機酸は、１種を単独で使用してもよく、２種以上を組み合わせて使用してもよい。このような有機酸と上記サブマイクロ銅粒子とを組み合わせることで、サブマイクロ銅粒子の分散性と焼結時における有機酸の脱離性を両立できる傾向にある。 The sub-micro copper particles may be treated with a specific surface treatment agent. Examples of the specific surface treatment agent include organic acids having 2 to 18 carbon atoms. Examples of the organic acid having 2 to 18 carbon atoms include acetic acid, propanoic acid, butanoic acid, pentanoic acid, hexanoic acid, heptanoic acid, caprylic acid, methylheptanoic acid, ethylhexanoic acid, propylpentanoic acid, pelargonic acid, and methyloctane. Acid, ethylheptanoic acid, propylhexanoic acid, capric acid, methylnonanoic acid, ethyloctanoic acid, propylheptanoic acid, butylhexanoic acid, undecanoic acid, methyldecanoic acid, ethylnonanoic acid, propyloctanoic acid, butylheptanoic acid, lauric acid, methylundecane Acid, ethyldecanoic acid, propylnonanoic acid, butyloctanoic acid, pentylheptanoic acid, tridecanoic acid, methyldodecanoic acid, ethylundecanoic acid, propyldecanoic acid, butylnonanoic acid, pentyloctanoic acid, myristic acid, methyltridecanoic acid, ethyldodecane Acid, propylundecanoic acid, butyldecanoic acid, pentylnonanoic acid, hexyloctanoic acid, pentadecanoic acid, methyltetradecanoic acid, ethyltridecanoic acid, propyldodecanoic acid, butylundecanoic acid, pentyldecanoic acid, hexylnonanoic acid, palmitic acid, methylpentadecanoic acid, Ethyltetradecanoic acid, propyltridecanoic acid, butyldodecanoic acid, pentylundecanoic acid, hexyldecanoic acid, heptylnonanoic acid, heptadecanoic acid, octadecanoic acid, methylcyclohexanecarboxylic acid, ethylcyclohexanecarboxylic acid, propylcyclohexanecarboxylic acid, butylcyclohexanecarboxylic acid, pentyl Cyclohexanecarboxylic acid, hexylcyclohexanecarboxylic acid, heptylcyclohexanecarboxylic acid, octylcyclohexanecarboxylic acid , Saturated fatty acids such as nonylcyclohexanecarboxylic acid; octenoic acid, nonenoic acid, methylnonenoic acid, decenoic acid, undecenoic acid, dodecenoic acid, tridecenoic acid, tetradecenoic acid, myristoleic acid, pentadecenoic acid, hexadecenoic acid, palmitoleic acid, sabienoic acid, Unsaturated fatty acids such as oleic acid, vaccenic acid, linoleic acid, linolenic acid, linolenic acid; terephthalic acid, pyromellitic acid, o-phenoxybenzoic acid, methylbenzoic acid, ethylbenzoic acid, propylbenzoic acid, butylbenzoic acid, pentyl Examples thereof include aromatic carboxylic acids such as benzoic acid, hexyl benzoic acid, heptyl benzoic acid, octyl benzoic acid, and nonyl benzoic acid. An organic acid may be used individually by 1 type, and may be used in combination of 2 or more type. By combining such an organic acid and the sub-micro copper particles, the dispersibility of the sub-micro copper particles and the detachability of the organic acid during sintering tend to be compatible.
表面処理剤の処理量は、サブマイクロ銅粒子の表面に一分子層〜三分子層付着する量であってもよい。この量は、サブマイクロ銅粒子の表面に付着した分子層数（ｎ）、サブマイクロ銅粒子の比表面積（Ａｐ）(単位ｍ2／ｇ)と、表面処理剤の分子量（Ｍｓ）（単位ｇ／ｍｏｌ）と、表面処理剤の最小被覆面積（ＳＳ）（単位ｍ２／個）と、アボガドロ数（ＮＡ）（６．０２×１０２３個)から算出できる。具体的には、表面処理剤の処理量は、表面処理剤の処理量（質量％）＝｛（ｎ・Ａｐ・Ｍｓ）／（ＳＳ・ＮＡ＋ｎ・Ａｐ・Ｍｓ）｝×１００％の式に従って算出される。 The treatment amount of the surface treatment agent may be an amount that adheres to a monomolecular layer to a trimolecular layer on the surface of the sub-micro copper particles. This amount depends on the number of molecular layers (n) attached to the surface of the sub-micro copper particles, the specific surface area (A p ) (unit m 2 / g) of the sub-micro copper particles, and the molecular weight (M s ) of the surface treatment agent ( (Unit g / mol), minimum covering area (S S ) (unit m 2 / piece) of surface treatment agent, and Avogadro's number (N A ) (6.02 × 10 23 pieces). Specifically, the treatment amount of the surface treatment agent is the treatment amount of the surface treatment agent (% by mass) = {(n · A p · M s ) / (S S · N A + n · A p · M s )} * Calculated according to the equation of 100%.
サブマイクロ銅粒子の比表面積は、乾燥させたサブマイクロ銅粒子をＢＥＴ比表面積測定法で測定することで算出できる。表面処理剤の最小被覆面積は、表面処理剤が直鎖飽和脂肪酸の場合、２．０５×１０−１９ｍ２／１分子である。それ以外の表面処理剤の場合には、例えば、分子モデルからの計算、又は「化学と教育」（上江田捷博、稲福純夫、森巌、４０（２），１９９２，ｐ１１４−１１７）に記載の方法で測定できる。表面処理剤の定量方法の一例を示す。表面処理剤は、無加圧接合用銅ペーストから分散媒を除去した乾燥粉の熱脱離ガス・ガスクロマトグラフ質量分析計により同定でき、これにより表面処理剤の炭素数及び分子量を決定できる。表面処理剤の炭素分割合は、炭素分分析により分析できる。炭素分分析法としては、例えば、高周波誘導加熱炉燃焼／赤外線吸収法が挙げられる。同定された表面処理剤の炭素数、分子量及び炭素分割合から上記式により表面処理剤量を算出できる。 The specific surface area of the sub-micro copper particles can be calculated by measuring the dried sub-micro copper particles by the BET specific surface area measurement method. Minimum coverage of the surface treatment agent, if the surface treatment agent is a straight-chain saturated fatty acids, is 2.05 × 10 -19 m 2/1 molecule. In the case of other surface treatment agents, for example, calculation from a molecular model, or “Chemistry and Education” (Akihiro Ueda, Juno Inafuku, Mori Kaoru, 40 (2), 1992, p114-117) It can be measured by the method described. An example of the method for quantifying the surface treatment agent is shown. The surface treatment agent can be identified by a thermal desorption gas / gas chromatograph mass spectrometer of a dry powder obtained by removing the dispersion medium from the non-pressure bonding copper paste, and thereby the carbon number and molecular weight of the surface treatment agent can be determined. The carbon content of the surface treatment agent can be analyzed by carbon content analysis. Examples of the carbon analysis method include a high frequency induction furnace combustion / infrared absorption method. The amount of the surface treatment agent can be calculated by the above formula from the carbon number, molecular weight, and carbon content ratio of the identified surface treatment agent.
表面処理剤の上記処理量は、０．０７質量％以上２．１質量％以下であってもよく、０．１０質量％以上１．６質量％以下であってもよく、０．２質量％以上１．１質量％以下であってもよい。 The treatment amount of the surface treatment agent may be 0.07% by mass or more and 2.1% by mass or less, may be 0.10% by mass or more and 1.6% by mass or less, and may be 0.2% by mass. It may be 1.1% by mass or less.
上記サブマイクロ銅粒子は良好な焼結性を有するため、銅ナノ粒子を主に用いた接合材にみられる高価な合成コスト、良好でない分散性、焼結後の体積収縮の低下等の課題を低減することができる。 Since the above-mentioned sub-micro copper particles have good sinterability, there are problems such as expensive synthesis cost, poor dispersibility, and decrease in volume shrinkage after sintering, which are mainly seen in bonding materials using copper nanoparticles. Can be reduced.
本実施形態に係るサブマイクロ銅粒子としては、市販されているものを用いることができる。市販されているサブマイクロ粒子としては、例えば、ＣＨ−０２００（三井金属鉱業株式会社製、体積平均粒径０．３６μｍ）、ＨＴ−１４（三井金属鉱業株式会社製、体積平均粒径０．４１μｍ）、ＣＴ−５００（三井金属鉱業株式会社製、体積平均粒径０．７２μｍ）、Ｔｎ−Ｃｕ１００（太陽日産社製、体積平均粒径０．１２μｍ）が挙げられる。 As the sub-micro copper particles according to the present embodiment, commercially available ones can be used. Examples of commercially available sub-microparticles include CH-0200 (Mitsui Metal Mining Co., Ltd., volume average particle size 0.36 μm), HT-14 (Mitsui Metal Mining Co., Ltd., volume average particle size 0.41 μm). ), CT-500 (manufactured by Mitsui Mining & Smelting Co., Ltd., volume average particle size 0.72 μm), Tn-Cu100 (manufactured by Taiyo Nissan Co., Ltd., volume average particle size 0.12 μm).
（マイクロ銅粒子）
マイクロ銅粒子としては、粒径が２．０μｍ以上５０μｍ以下の銅粒子を用いることができ、例えば、体積平均粒径が２．０μｍ以上５０μｍ以下の銅粒子を用いることができる。マイクロ銅粒子の体積平均粒径が上記範囲内であれば、無加圧接合用銅ペーストを焼結した際の体積収縮、ボイドの発生等を十分に低減でき、無加圧接合用銅ペーストを焼結させて製造される接合体の接合強度を確保することが容易となり、無加圧接合用銅ペーストを半導体素子の接合に用いる場合は半導体装置が良好なダイシェア強度及び接続信頼性を示す傾向にある。より一層上記効果を奏するという観点から、マイクロ銅粒子の体積平均粒径は、２μｍ以上２０μｍ以下であってもよく、２μｍ以上１０μｍ以下であってもよく、３μｍ以上２０μｍ以下であってもよく、３μｍ以上１０μｍ以下であってもよい。
(Micro copper particles)
As the micro copper particles, copper particles having a particle size of 2.0 μm or more and 50 μm or less can be used. For example, copper particles having a volume average particle size of 2.0 μm or more and 50 μm or less can be used. If the volume average particle size of the micro copper particles is within the above range, the volume shrinkage and void generation when the copper paste for pressureless bonding is sintered can be sufficiently reduced, and the copper paste for pressureless bonding is sintered. It becomes easy to ensure the bonding strength of the bonded body manufactured by the above-mentioned method, and when the pressure-free bonding copper paste is used for bonding semiconductor elements, the semiconductor device tends to exhibit good die shear strength and connection reliability. From the viewpoint of further exerting the above effects, the volume average particle diameter of the micro copper particles may be 2 μm or more and 20 μm or less, 2 μm or more and 10 μm or less, or 3 μm or more and 20 μm or less, It may be 3 μm or more and 10 μm or less.
マイクロ銅粒子の含有量は、金属粒子の全質量を基準として、１０質量％以上９０質量％以下であってもよく、１５質量％以上６５質量％以下であってもよく、２０質量％以上６０質量％以下であってもよい。マイクロ銅粒子の含有量が、上記範囲内であれば、無加圧接合用銅ペーストを焼結させて製造される接合体の接合強度を確保することが容易となり、無加圧接合用銅ペーストを半導体素子の接合に用いる場合は半導体装置が良好なダイシェア強度及び接続信頼性を示す傾向にある。 The content of the micro copper particles may be 10% by mass to 90% by mass, 15% by mass to 65% by mass, or 20% by mass to 60% by mass based on the total mass of the metal particles. The mass% or less may be sufficient. If the content of the micro copper particles is within the above range, it becomes easy to secure the bonding strength of the joined body produced by sintering the copper paste for pressureless bonding, and the copper paste for pressureless bonding is used as a semiconductor. When used for joining elements, semiconductor devices tend to exhibit good die shear strength and connection reliability.
サブマイクロ銅粒子の含有量及びマイクロ銅粒子の含有量の合計は、金属粒子の全質量を基準として、８０質量％以上とすることができる。サブマイクロ銅粒子の含有量及びマイクロ銅粒子の含有量の合計が上記範囲内であれば、無加圧接合用銅ペーストを焼結した際の体積収縮を十分に低減でき、無加圧接合用銅ペーストを焼結させて製造される接合体の接合強度を確保することが容易となる。無加圧接合用銅ペーストを半導体素子の接合に用いる場合は半導体装置が良好なダイシェア強度及び接続信頼性を示す傾向にある。より一層上記効果を奏するという観点から、サブマイクロ銅粒子の含有量及びマイクロ銅粒子の含有量の合計は、金属粒子の全質量を基準として、９０質量％以上であってもよく、９５質量％以上であってもよく、１００質量％であってもよい。 The total of the content of the sub-micro copper particles and the content of the micro-copper particles can be 80% by mass or more based on the total mass of the metal particles. If the sum of the content of the sub-micro copper particles and the content of the micro-copper particles is within the above range, the volume shrinkage when sintering the copper paste for pressureless bonding can be sufficiently reduced, and the copper paste for pressureless bonding It becomes easy to ensure the joining strength of the joined body manufactured by sintering the material. When the pressure-free bonding copper paste is used for bonding semiconductor elements, the semiconductor device tends to exhibit good die shear strength and connection reliability. From the standpoint of further exerting the above effects, the total content of the sub-micro copper particles and the content of the micro-copper particles may be 90% by mass or more based on the total mass of the metal particles, and 95% by mass. The above may be sufficient and 100 mass% may be sufficient.
マイクロ銅粒子の形状は、特に限定されるものではない。マイクロ銅粒子の形状としては、例えば、球状、塊状、針状、フレーク状、略球状、及びこれらの凝集体が挙げられる。マイクロ銅粒子の形状は、中でも、フレーク状が好ましい。フレーク状のマイクロ銅粒子を用いることで、無加圧接合用銅ペースト内のマイクロ銅粒子が、接合面に対して略平行に配向することにより、無加圧接合用銅ペーストを焼結させたときの体積収縮を抑制でき、無加圧接合用銅ペーストを焼結させて製造される接合体の接合強度を確保することが容易となる。無加圧接合用銅ペーストを半導体素子の接合に用いる場合は半導体装置が良好なダイシェア強度及び接続信頼性を示す傾向にある。より一層上記効果を奏するという観点から、フレーク状のマイクロ銅粒子としては、中でも、アスペクト比が４以上であってもよく、６以上であってもよい。 The shape of the micro copper particles is not particularly limited. Examples of the shape of the micro copper particles include a spherical shape, a lump shape, a needle shape, a flake shape, a substantially spherical shape, and an aggregate thereof. Among these, the shape of the micro copper particles is preferably a flake shape. By using the flake-shaped micro copper particles, the micro copper particles in the pressure-free bonding copper paste are oriented substantially parallel to the bonding surface, thereby sintering the pressure-free bonding copper paste. Volume shrinkage can be suppressed, and it becomes easy to ensure the bonding strength of the bonded body manufactured by sintering the pressure-free bonding copper paste. When the pressure-free bonding copper paste is used for bonding semiconductor elements, the semiconductor device tends to exhibit good die shear strength and connection reliability. From the standpoint of further achieving the above effects, the flaky micro copper particles may have an aspect ratio of 4 or more, or 6 or more.
マイクロ銅粒子において、表面処理剤の処理の有無は特に限定されるものではない。分散安定性及び耐酸化性の観点から、マイクロ銅粒子は表面処理剤で処理されていてもよい。表面処理剤は、接合時に除去されるものであってもよい。このような表面処理剤としては、例えば、ドデカン酸、パルミチン酸、ヘプタデカン酸、ステアリン酸、アラキジン酸、リノール酸、リノレイン酸、オレイン酸等の脂肪族カルボン酸；テレフタル酸、ピロメリット酸、ｏ−フェノキシ安息香酸等の芳香族カルボン酸；セチルアルコール、ステアリルアルコール、イソボルニルシクロヘキサノール、テトラエチレングリコール等の脂肪族アルコール；ｐ−フェニルフェノール等の芳香族アルコール；オクチルアミン、ドデシルアミン、ステアリルアミン等のアルキルアミン；ステアロニトリル、デカニトリル等の脂肪族ニトリル；アルキルアルコキシシラン等のシランカップリング剤；ポリエチレングリコール、ポリビニルアルコール、ポリビニルピロリドン、シリコーンオリゴマー等の高分子処理材等が挙げられる。表面処理剤は、１種を単独で使用してもよく、２種以上を組み合わせて使用してもよい。 In the micro copper particles, the presence or absence of the treatment with the surface treatment agent is not particularly limited. From the viewpoint of dispersion stability and oxidation resistance, the micro copper particles may be treated with a surface treatment agent. The surface treatment agent may be removed at the time of joining. Examples of such surface treatment agents include aliphatic carboxylic acids such as dodecanoic acid, palmitic acid, heptadecanoic acid, stearic acid, arachidic acid, linoleic acid, linolenic acid, oleic acid; terephthalic acid, pyromellitic acid, o- Aromatic carboxylic acids such as phenoxybenzoic acid; aliphatic alcohols such as cetyl alcohol, stearyl alcohol, isobornylcyclohexanol, tetraethylene glycol; aromatic alcohols such as p-phenylphenol; octylamine, dodecylamine, stearylamine, etc. Alkylamines; aliphatic nitriles such as stearonitrile and decanonitrile; silane coupling agents such as alkylalkoxysilanes; high content of polyethylene glycol, polyvinyl alcohol, polyvinylpyrrolidone, silicone oligomers, etc. Treating material and the like. A surface treating agent may be used individually by 1 type, and may be used in combination of 2 or more type.
表面処理剤の処理量は、粒子表面に一分子層以上の量であってもよい。このような表面処理剤の処理量は、マイクロ銅粒子の比表面積、表面処理剤の分子量、及び表面処理剤の最小被覆面積により変化する。表面処理剤の処理量は、通常０．００１質量％以上である。マイクロ銅粒子の比表面積、表面処理剤の分子量、及び表面処理剤の最小被覆面積については、上述した方法により算出することができる。 The treatment amount of the surface treatment agent may be a monomolecular layer or more on the particle surface. The treatment amount of such a surface treatment agent varies depending on the specific surface area of the micro copper particles, the molecular weight of the surface treatment agent, and the minimum coating area of the surface treatment agent. The treatment amount of the surface treatment agent is usually 0.001% by mass or more. The specific surface area of the micro copper particles, the molecular weight of the surface treatment agent, and the minimum coating area of the surface treatment agent can be calculated by the method described above.
上記サブマイクロ銅粒子のみから無加圧接合用銅ペーストを調製する場合、分散媒の乾燥に伴う体積収縮及び焼結収縮が大きいため、接合用銅ペーストの焼結時に被着面より剥離しやすくなり、半導体素子などの接合においては充分なダイシェア強度及び接続信頼性が得られにくい。上記マイクロ銅粒子のみから無加圧接合用銅ペーストを調製する場合、焼結温度が高温化し、４００℃以上の焼結工程を必要とする傾向にある。サブマイクロ銅粒子とマイクロ銅粒子とを併用することで、無加圧接合用銅ペーストを焼結させたときの体積収縮が抑制され、接合体は充分な接合強度を有することができる。無加圧接合用銅ペーストを半導体素子の接合に用いる場合は半導体装置が良好なダイシェア強度及び接続信頼性を示すという効果が得られる。 When preparing a copper paste for pressureless bonding only from the above-mentioned sub-micro copper particles, the volume shrinkage and sintering shrinkage that accompany the drying of the dispersion medium are large, and therefore, the copper paste for joining is easily peeled off from the adherend surface during sintering In addition, it is difficult to obtain sufficient die shear strength and connection reliability in the joining of semiconductor elements and the like. When preparing a copper paste for pressureless bonding only from the micro copper particles, the sintering temperature tends to increase and a sintering step of 400 ° C. or more tends to be required. By using the sub-micro copper particles and the micro-copper particles in combination, volume shrinkage when the pressure-free bonding copper paste is sintered is suppressed, and the bonded body can have sufficient bonding strength. When the pressure-free bonding copper paste is used for bonding of semiconductor elements, an effect that the semiconductor device exhibits good die shear strength and connection reliability can be obtained.
本実施形態に係るマイクロ銅粒子としては、市販されているものを用いることができる。市販されているマイクロ粒子としては、例えば、ＭＡ−Ｃ０２５ＫＦＤ（三井金属鉱業株式会社製、体積平均粒径７．５μｍ）、３Ｌ３（福田金属箔粉工業株式会社製、体積平均粒径８．０μｍ）、１１１０Ｆ（三井金属鉱業株式会社製、体積平均粒径３．８μｍ）、ＨＷＱ３．０μｍ（福田金属箔粉工業株式会社製、体積平均粒径３．０μｍ）が挙げられる。 What is marketed can be used as micro copper particles concerning this embodiment. Examples of commercially available microparticles include MA-C025KFD (Mitsui Metals Mining Co., Ltd., volume average particle size 7.5 μm), 3L3 (Fukuda Metal Foil Powder Co., Ltd., volume average particle size 8.0 μm). 1110F (Mitsui Metals Mining Co., Ltd., volume average particle size 3.8 μm), HWQ 3.0 μm (Fukuda Metal Foil Powder Co., Ltd., volume average particle size 3.0 μm).
（上記の銅粒子以外のその他の金属粒子）
金属粒子としては、サブマイクロ銅粒子及びマイクロ銅粒子以外のその他の金属粒子を含んでいてもよく、例えば、銅ナノ粒子、ニッケル、銀、金、パラジウム、白金等の粒子を含んでいてもよい。銅粒子以外のその他の金属粒子は、体積平均粒径が０．０１μｍ以上１０μｍ以下であってもよく、０．０１μｍ以上５μｍ以下であってもよく、０．０５μｍ以上３μｍ以下であってもよい。その他の金属粒子を含んでいる場合、その含有量は、充分な接合性を得るという観点から、金属粒子の全質量を基準として、２０質量％未満であってもよく、１０質量％以下であってもよい。その他の金属粒子は、含まれなくてもよい。その他の金属粒子の形状は、特に限定されるものではない。
(Other metal particles other than the above copper particles)
The metal particles may include other metal particles other than the sub-micro copper particles and the micro-copper particles, and may include, for example, particles of copper nanoparticles, nickel, silver, gold, palladium, platinum, and the like. . Other metal particles other than the copper particles may have a volume average particle size of 0.01 μm or more and 10 μm or less, 0.01 μm or more and 5 μm or less, or 0.05 μm or more and 3 μm or less. . When other metal particles are contained, the content thereof may be less than 20% by mass or less than 10% by mass based on the total mass of the metal particles from the viewpoint of obtaining sufficient bondability. May be. Other metal particles may not be included. The shape of other metal particles is not particularly limited.
銅粒子以外の金属粒子を含む場合、複数種の金属が固溶又は分散した焼結体を得ることができるため、焼結体の降伏応力、疲労強度等の機械的な特性が改善され、接続信頼性が向上しやすい。また、複数種の金属粒子を添加することで、無加圧接合用銅ペーストの焼結体は、特定の被着体に対して充分な接合強度を有することができる。無加圧接合用銅ペーストを半導体素子の接合に用いる場合は半導体装置のダイシェア強度及び接続信頼性が向上しやすい。 When metal particles other than copper particles are included, a sintered body in which multiple types of metals are dissolved or dispersed can be obtained, so that mechanical properties such as yield stress and fatigue strength of the sintered body are improved, and connection is achieved. Reliability is easy to improve. Moreover, the sintered compact of the copper paste for pressureless joining can have sufficient joining strength with respect to a specific adherend by adding a multiple types of metal particle. When the pressure-free bonding copper paste is used for bonding semiconductor elements, the die shear strength and connection reliability of the semiconductor device are likely to be improved.
（分散媒）
分散媒は、３００℃以上の沸点を有する溶媒を含む。無加圧接合用銅ペーストの焼結時において、焼結及び緻密化を妨げず、接合温度に達した際に速やかに蒸発・除去されるという観点から、３００℃以上の沸点を有する溶媒の沸点としては、３００℃以上４５０℃以下であってもよく、３０５℃以上４００℃以下であってもよく、３１０℃以上３８０℃以上であってもよい。
(Dispersion medium)
The dispersion medium includes a solvent having a boiling point of 300 ° C. or higher. As the boiling point of the solvent having a boiling point of 300 ° C. or higher, from the viewpoint that when pressing the copper paste for pressureless bonding, the sintering and densification are not hindered and the bonding temperature is quickly evaporated and removed. May be 300 ° C. or higher and 450 ° C. or lower, 305 ° C. or higher and 400 ° C. or lower, or 310 ° C. or higher and 380 ° C. or higher.
３００℃以上の沸点を有する溶媒は、含まれる金属粒子の分散性を向上させるため、金属粒子表面と親和性の高い構造を選ぶことが好ましい。金属粒子がアルキル基を含む表面処理剤で表面処理されている場合には、アルキル基を有する溶媒を選ぶことが好ましい。このような３００℃以上の沸点を有する溶媒としては、イソボルニルシクロヘキサノール（ＭＴＰＨ、日本テルペン社製)、ステアリン酸ブチル、エキセパールＢＳ（花王社製）、ステアリン酸ステアリル、エキセパールＳＳ（花王社製）、ステアリン酸２−エチルヘキシル、エキセパールＥＨ−Ｓ（花王社製）、ステアリン酸イソトリデシル、エキセパールＴＤ−Ｓ（花王社製）、イソオクタデカノール、ファインオキソコール１８０（日産化学社製）、ファインオキソコール１８０Ｔ（日産化学社製）、２−ヘキシルデカノール、ファインオキソコール１６００（日産化学社製）、トリブチリン、テトラエチレングリコール、ヘプタデカン、オクタデカン、ノナデカン、エイコサン、ヘネイコサン、ドコサン、メチルヘプタデカン、トリデシルシクロヘキサン、テトラデシルシクロヘキサン、ペンタデシルシクロヘキサン、ヘキサデシルシクロヘキサン、ウンデシルベンゼン、ドデシルベンゼン、テトラデシルベンゼン、トリデシルベンゼン、ペンタデシルベンゼン、ヘキサデシルベンゼン、ヘプタデシルベンゼン、ノニルナフタレン、ジフェニルプロパン、オクタン酸オクチル、ミリスチン酸メチル、ミリスチン酸エチル、リノール酸メチル、ステアリン酸メチル、トリエチレングリコールビス（２−エチルヘキサン酸）、クエン酸トリブチル、ペンチルフェノール、セバシン酸ジブチル、オレイルアルコール、セチルアルコール、メトキシフェネチルアルコール、ベンジルフェノール、ヘキサデカニトリル、ヘプタデカニトリル、安息香酸ベンジル、シンメチリン等が挙げられる。 For the solvent having a boiling point of 300 ° C. or higher, it is preferable to select a structure having a high affinity for the metal particle surface in order to improve the dispersibility of the contained metal particles. When the metal particles are surface-treated with a surface treatment agent containing an alkyl group, it is preferable to select a solvent having an alkyl group. Examples of the solvent having a boiling point of 300 ° C. or higher include isobornyl cyclohexanol (MTPH, manufactured by Nippon Terpene Co., Ltd.), butyl stearate, Exepal BS (manufactured by Kao Corporation), stearyl stearate, Exepal SS (manufactured by Kao Corporation). ), 2-ethylhexyl stearate, Exepal EH-S (manufactured by Kao), isotridecyl stearate, Exepal TD-S (manufactured by Kao), isooctadecanol, fine oxocol 180 (manufactured by Nissan Chemical Co., Ltd.), fine oxo Coal 180T (manufactured by Nissan Chemical Co., Ltd.), 2-hexyldecanol, fine oxocol 1600 (manufactured by Nissan Chemical Co., Ltd.), tributyrin, tetraethylene glycol, heptadecane, octadecane, nonadecane, eicosane, heneicosane, docosane, methylheptadecane, tride Silcyclohexane, tetradecylcyclohexane, pentadecylcyclohexane, hexadecylcyclohexane, undecylbenzene, dodecylbenzene, tetradecylbenzene, tridecylbenzene, pentadecylbenzene, hexadecylbenzene, heptadecylbenzene, nonylnaphthalene, diphenylpropane, octanoic acid Octyl, methyl myristate, ethyl myristate, methyl linoleate, methyl stearate, triethylene glycol bis (2-ethylhexanoic acid), tributyl citrate, pentylphenol, dibutyl sebacate, oleyl alcohol, cetyl alcohol, methoxyphenethyl alcohol Benzylphenol, hexadeconitrile, heptadeconitrile, benzyl benzoate, cinmethylin, etc. That.
３００℃以上の沸点を有する溶媒としては、分散性向上という観点から、表面処理剤とのハンセン溶解度パラメータが近いものを選ぶことが好ましい。表面処理剤として、有機酸、有機アミン、ヒドロキシル基含有ポリマー、ポリビニルピロリドン等が扱いやすいことから、３００℃以上の沸点を有する溶媒は、ヒドロキシ基、エーテル基、及びエステル基からなる群から少なくとも１種の基を有していることが好ましい。ハンセン溶解度パラメータは、例えば、下記公開文献の巻末データベースから検索する、又は、データベース及びシミュレーション統合ソフトウエアＨＳＰｉＰで検索／計算することができる。
公開文献:「ＨＡＮＳＥＮ ＳＯＬＵＢＩＬＩＴＹ ＰＡＲＡＭＥＴＥＲＳ：Ａ ＵＳＥＲ’Ｓ ＨＡＮＤＢＯＯＫ」（ＣＲＣ Ｐｒｅｓｓ，１９９９）
As the solvent having a boiling point of 300 ° C. or higher, a solvent having a Hansen solubility parameter close to that of the surface treatment agent is preferably selected from the viewpoint of improving dispersibility. As a surface treatment agent, an organic acid, an organic amine, a hydroxyl group-containing polymer, polyvinyl pyrrolidone and the like are easy to handle. It preferably has a seed group. The Hansen solubility parameter can be searched from, for example, the end document database of the following published document, or can be searched / calculated by the database and simulation integrated software HSPiP.
Published literature: “HANSEN SOLUBILITY PARAMETERS: A USER'S HANDBOOK” (CRC Press, 1999)
３００℃以上の沸点を有する溶媒の含有量は、無加圧接合用銅ペーストの全質量を基準として、２質量％以上とすることができる。３００℃以上の沸点を有する溶媒の含有量は、無加圧接合用銅ペーストの全質量を基準として、２．２質量％以上であってもよく、２．４質量％以上であってもよい。３００℃以上の沸点を有する溶媒の含有量が、上記範囲であれば、本実施形態の無加圧接合用銅ペーストを焼結する際に、一定量の溶媒が無加圧接合用銅ペースト中に残留することができ、部材間の銅ペーストの可撓性及び付着性が維持されやすく、接合に用いる部材同士が異なる熱膨張率を有している場合でも、剥離なく接合できる傾向にある。３００℃以上の沸点を有する溶媒の含有量の上限は、特に限定されるものではない。焼結温度で分散媒が除去されるまでの時間を抑え、焼結時間を短くすることができるという観点から、無加圧接合用銅ペーストの全質量を基準として、９質量％以下であってもよい。 Content of the solvent which has a boiling point of 300 degreeC or more can be 2 mass% or more on the basis of the total mass of the copper paste for pressureless joining. The content of the solvent having a boiling point of 300 ° C. or higher may be 2.2% by mass or more, or 2.4% by mass or more based on the total mass of the copper paste for pressureless bonding. When the content of the solvent having a boiling point of 300 ° C. or higher is within the above range, a certain amount of solvent remains in the pressure-free bonding copper paste when the pressure-free bonding copper paste of this embodiment is sintered. The flexibility and adhesion of the copper paste between the members can be easily maintained, and even when the members used for bonding have different coefficients of thermal expansion, they tend to be bonded without peeling. The upper limit of the content of the solvent having a boiling point of 300 ° C. or higher is not particularly limited. From the viewpoint that the time until the dispersion medium is removed at the sintering temperature can be suppressed and the sintering time can be shortened, even if it is 9% by mass or less based on the total mass of the copper paste for pressureless bonding Good.
また、本実施形態の無加圧接合用銅ペーストにおいて、３００℃以上の沸点を有する溶媒の含有量は、無加圧接合用銅ペーストの全容量を基準として、８体積％以上であってもよく、１７体積％以上であってもよく、２３体積％以上であってもよい。３００℃以上の沸点を有する溶媒の含有量が、上記範囲であれば、本実施形態の無加圧接合用銅ペーストを焼結する際に、一定量の溶媒が無加圧接合用銅ペースト中に残留することができ、部材間の銅ペーストの可撓性及び付着性が維持されやすく、接合に用いる部材同士が異なる熱膨張率を有している場合でも、剥離なく接合できる傾向にある。３００℃以上の沸点を有する溶媒の含有量の上限は、特に限定されるものではない。焼結温度で分散媒が除去されるまでの時間を抑え、焼結時間を短くすることができるという観点から、無加圧接合用銅ペーストの全容量を基準として、６０体積％以下であってもよい。 Moreover, in the copper paste for pressureless bonding of the present embodiment, the content of the solvent having a boiling point of 300 ° C. or more may be 8% by volume or more based on the total capacity of the copper paste for pressureless bonding, It may be 17% by volume or more, or 23% by volume or more. When the content of the solvent having a boiling point of 300 ° C. or higher is within the above range, a certain amount of solvent remains in the pressure-free bonding copper paste when the pressure-free bonding copper paste of this embodiment is sintered. The flexibility and adhesion of the copper paste between the members can be easily maintained, and even when the members used for bonding have different coefficients of thermal expansion, they tend to be bonded without peeling. The upper limit of the content of the solvent having a boiling point of 300 ° C. or higher is not particularly limited. From the viewpoint that the time until the dispersion medium is removed at the sintering temperature can be suppressed and the sintering time can be shortened, even if it is 60% by volume or less based on the total capacity of the copper paste for pressureless bonding Good.
分散媒は、３００℃未満の沸点を有する溶媒を含んでいてもよい。３００℃未満の沸点を有する溶媒としては、α−テルピネオール、ジエチレングリコールモノブチルエーテル、ジエチレングリコールモノブチルエーテルアセテート、４−メチル−１，３−ジオキソラン−２−オン、ジエチレングリコールモノブチルエーテル等が挙げられる。３００℃未満の沸点を有する溶媒は、焼結工程より前の乾燥工程又は昇温過程で容易に除去できる。分散媒は、３００℃以上の沸点を有する溶媒及び３００℃未満の沸点を有する溶媒から、１種を単独で使用してもよく、２種以上を組み合わせて使用してもよい。 The dispersion medium may contain a solvent having a boiling point of less than 300 ° C. Examples of the solvent having a boiling point of less than 300 ° C. include α-terpineol, diethylene glycol monobutyl ether, diethylene glycol monobutyl ether acetate, 4-methyl-1,3-dioxolan-2-one, diethylene glycol monobutyl ether and the like. A solvent having a boiling point of less than 300 ° C. can be easily removed in a drying step or a temperature rising step prior to the sintering step. A dispersion medium may be used individually by 1 type from the solvent which has a boiling point of 300 degreeC or more, and the solvent which has a boiling point of less than 300 degreeC, and may be used in combination of 2 or more type.
分散媒の含有量は、金属粒子の全質量を１００質量部として、５〜５０質量部であってもよい。分散媒の含有量が上記範囲内であれば、無加圧接合用銅ペーストをより適切な粘度に調整でき、また、銅粒子の焼結を阻害しにくい。 The content of the dispersion medium may be 5 to 50 parts by mass with 100 parts by mass of the total mass of the metal particles. If the content of the dispersion medium is within the above range, the pressure-free joining copper paste can be adjusted to a more appropriate viscosity, and it is difficult to inhibit sintering of the copper particles.
分散媒における３００℃以上の沸点を有する溶媒の含有量は、分散媒の全質量を基準として、２０質量％以上１００質量％以下であればよい。分散媒における３００℃以上の沸点を有する溶媒の含有量が上記範囲内であれば、無加圧接合用銅ペーストの全質量に対する３００℃以上の沸点を有する溶媒の含有量を確保しやすい。 The content of the solvent having a boiling point of 300 ° C. or higher in the dispersion medium may be 20% by mass or more and 100% by mass or less based on the total mass of the dispersion medium. If the content of the solvent having a boiling point of 300 ° C. or higher in the dispersion medium is within the above range, it is easy to ensure the content of the solvent having a boiling point of 300 ° C. or higher with respect to the total mass of the copper paste for pressureless bonding.
無加圧接合用銅ペースト組成物に含まれる分散媒の種類は、例えば、高温脱離ガスのガスクロマトグラフ−質量分析法、及びＴＯＦ−ＳＩＭＳで分析できる。その他の分析方法としては、遠心分離により粒子成分を分離して得られる上澄みを通常の有機分析、例えば、ＦＴ−ＩＲ、ＮＭＲ、液体クロマトグラフ及びこれらの組み合わせで同定しても良い。分散媒の種類の比率は、液体クロマトグラフ、ＮＭＲ等で定量できる。 The kind of the dispersion medium contained in the copper paste composition for pressureless bonding can be analyzed by, for example, high-temperature desorption gas gas chromatography-mass spectrometry and TOF-SIMS. As another analysis method, the supernatant obtained by separating the particle components by centrifugation may be identified by ordinary organic analysis, for example, FT-IR, NMR, liquid chromatograph, and combinations thereof. The ratio of the type of dispersion medium can be quantified by liquid chromatography, NMR, or the like.
（添加剤）
無加圧接合用銅ペーストには、必要に応じて、ノニオン系界面活性剤、フッ素系界面活性剤等の濡れ向上剤；シリコーン油等の消泡剤；無機イオン交換体等のイオントラップ剤等を適宜添加してもよい。
(Additive)
If necessary, the copper paste for pressureless bonding includes a nonionic surfactant, a wetting improver such as a fluorosurfactant; an antifoaming agent such as silicone oil; an ion trapping agent such as an inorganic ion exchanger, and the like. You may add suitably.
本実施形態の無加圧接合用銅ペーストは、ペーストを２５℃から３００℃まで昇温させたときに残存する３００℃以上の沸点を有する溶媒の含有量が、３００℃まで昇温させたときの無加圧接合用銅ペーストの質量を基準として、１質量％以上であることが好ましい。昇温速度は、９．２（℃／分）とすることができる。この場合、部材間の銅ペーストの可撓性を維持させることが容易となり、熱膨張率の異なる部材同士を接合するときに熱膨張率差による剪断力が働いた場合であっても、銅ペーストが部材に対して変形・追随できるため、強固に接合することができる傾向にある。ペーストを２５℃から３００℃まで昇温させたときに残存する３００℃以上の沸点を有する溶媒の含有量の上限は特に限定されるものではなく、焼結温度で分散媒が除去されるまでの時間を抑え、焼結時間を短くすることができるという観点から、９質量％以下であってもよい。 The pressure-free bonding copper paste of this embodiment is obtained when the content of the solvent having a boiling point of 300 ° C. or higher remaining when the paste is heated from 25 ° C. to 300 ° C. is heated to 300 ° C. It is preferably 1% by mass or more based on the mass of the copper paste for pressureless bonding. The heating rate can be 9.2 (° C./min). In this case, it becomes easy to maintain the flexibility of the copper paste between the members, and even when the shearing force due to the difference in the thermal expansion coefficient is applied when the members having different thermal expansion coefficients are joined together, the copper paste However, since it can be deformed / followed with respect to the member, it tends to be firmly joined. The upper limit of the content of the solvent having a boiling point of 300 ° C. or higher that remains when the paste is heated from 25 ° C. to 300 ° C. is not particularly limited until the dispersion medium is removed at the sintering temperature. 9 mass% or less may be sufficient from a viewpoint that time can be restrained and sintering time can be shortened.
本実施形態の無加圧接合用銅ペーストは、接合時に十分な可撓性を有することができるため、２つの部材間に存在する無加圧接合用銅ペーストを２５０℃以上３５０℃未満の温度で加熱したときに、マイクロ銅粒子及びサブマイクロ銅粒子が焼結して金属結合を形成し、２つの部材間をダイシェア強度１０ＭＰａ以上、熱伝導率１００Ｗ／（ｍ・Ｋ）以上で接合することができる。 The pressure-free bonding copper paste of this embodiment can have sufficient flexibility at the time of bonding, so the pressure-free bonding copper paste existing between two members is heated at a temperature of 250 ° C. or higher and lower than 350 ° C. Then, the micro copper particles and the sub-micro copper particles are sintered to form a metal bond, and the two members can be bonded with a die shear strength of 10 MPa or more and a thermal conductivity of 100 W / (m · K) or more. .
本実施形態の無加圧接合用銅ペーストの一態様としては、上記金属粒子が、体積平均粒径が０．０１μｍ以上０．８μｍ以下であるサブマイクロ銅粒子と、体積平均粒径が２．０μｍ以上５０μｍ以下であるマイクロ銅粒子を含み、分散媒が３００℃以上の沸点を有する溶媒を含み、３００℃以上の沸点を有する溶媒の含有量が、無加圧接合用銅ペーストの全質量を基準として、２質量％以上である、無加圧接合用銅ペーストが挙げられる。 As one aspect of the copper paste for pressureless bonding of the present embodiment, the metal particles are sub-micro copper particles having a volume average particle diameter of 0.01 μm or more and 0.8 μm or less, and a volume average particle diameter of 2.0 μm. The content of the solvent containing the micro copper particles having a boiling point of 300 ° C. or higher, including the micro copper particles of 50 μm or less, and having a boiling point of 300 ° C. or higher is based on the total mass of the copper paste for pressureless bonding An example of the copper paste for pressureless bonding is 2% by mass or more.
上記無加圧接合用銅ペーストとしては、体積平均粒径が０．０１μｍ以上０．８μｍ以下であるサブマイクロ銅粒子と、体積平均粒径が２．０μｍ以上５０μｍ以下であるマイクロ銅粒子と、３００℃以上の沸点を有する溶媒を含む分散媒と、必要に応じてその他の上記成分を配合してなり、３００℃以上の沸点を有する溶媒の配合量が、無加圧接合用銅ペーストの全質量を基準として、２質量％以上であるものが挙げられる。 Examples of the pressureless bonding copper paste include sub-micro copper particles having a volume average particle diameter of 0.01 μm to 0.8 μm, micro copper particles having a volume average particle diameter of 2.0 μm to 50 μm, and 300 A dispersion medium containing a solvent having a boiling point of not lower than ° C. and other components as necessary, and the amount of the solvent having a boiling point of not lower than 300 ° C. is the total mass of the copper paste for pressureless bonding. As a reference | standard, what is 2 mass% or more is mentioned.
焼結性を有するサブマイクロ銅粒子と補強効果を有するマイクロ銅粒子とを通常の沸点３００℃未満の分散媒と混合したペースト状組成物であっても、接合する部材同士に顕著な熱膨張率の差が無ければ、高強度に接合することができる（例えば、表１における比較例１のＮｉメッキＣｕ板に対するダイシェア強度を参照）。しかしながら、このようなペースト状組成物を熱膨張率の異なる部材同士の接合に用いた場合には、接合力が大きく低下しやすい（例えば、表１における比較例１のＮｉメッキＳｉチップに対するダイシェア強度を参照）。接合力の低下の要因としては、接合温度よりも分散媒の沸点が低いと昇温過程で分散媒が蒸発し、接合温度に達する前にペースト状組成物が乾固した脆い組成物になってしまうことが考えられる。この状態で熱膨張率の異なるそれぞれの部材に熱応力が働くと、乾固した脆い組成物は部材に追随できず剥離又は亀裂を生じるため、結果として接合力が低下すると考えられる。 Even in paste-like compositions in which sub-micro copper particles having sinterability and micro-copper particles having a reinforcing effect are mixed with a dispersion medium having a normal boiling point of less than 300 ° C., the coefficient of thermal expansion is remarkable between members to be joined. If there is no difference, it can be bonded with high strength (for example, see the die shear strength for the Ni-plated Cu plate of Comparative Example 1 in Table 1). However, when such a paste-like composition is used for joining members having different coefficients of thermal expansion, the joining force tends to be greatly reduced (for example, die shear strength with respect to the Ni-plated Si chip of Comparative Example 1 in Table 1). See). The cause of the decrease in the bonding force is that if the boiling point of the dispersion medium is lower than the bonding temperature, the dispersion medium evaporates during the heating process, and the paste-like composition becomes a brittle composition that dries before reaching the bonding temperature. It is possible to end up. In this state, when thermal stress acts on each member having a different coefficient of thermal expansion, the dried and brittle composition cannot follow the member and peels off or cracks, so that it is considered that the joining force decreases as a result.
接合温度において、分散媒が残留できる３００℃以上の沸点を有する溶媒を含むことで、昇温過程で好ましくは１質量％以上の３００℃以上の沸点を有する溶媒が無加圧接合用銅ペースト中に残留することができるため、無加圧接合用銅ペーストに可撓性及び付着姓を与えることができる。そのため、接合時に熱膨張率の異なるそれぞれの部材に熱応力が働いた場合であっても、無加圧接合用銅ペーストが変形・追随して、部材を剥離無く接合できる。 By including a solvent having a boiling point of 300 ° C. or higher at which the dispersion medium can remain at the bonding temperature, the solvent having a boiling point of 300 ° C. or higher, preferably 1% by mass or higher, is contained in the non-pressure bonding copper paste in the temperature rising process. Since it can remain, flexibility and adhesion can be given to the pressure-free bonding copper paste. Therefore, even when thermal stress is applied to each member having a different coefficient of thermal expansion at the time of joining, the copper paste for pressureless joining is deformed and followed, and the members can be joined without peeling.
（無加圧接合用銅ペーストの調製）
無加圧接合用銅ペーストは、上述のサブマイクロ銅粒子、マイクロ銅粒子、その他の金属粒子及び任意の添加剤を、分散媒である３００℃以上の沸点を有する溶媒に混合して調製することができる。各成分の混合後に、撹拌処理を行ってもよい。無加圧接合用銅ペーストは、分級操作により分散液の最大粒径を調整してもよい。このとき、分散液の最大粒径は２０μｍ以下とすることができ、１０μｍ以下とすることもできる。
(Preparation of pressureless copper paste)
The copper paste for pressureless bonding can be prepared by mixing the above-mentioned sub-micro copper particles, micro-copper particles, other metal particles, and any additive in a solvent having a boiling point of 300 ° C. or higher as a dispersion medium. it can. You may perform a stirring process after mixing of each component. The copper paste for pressureless bonding may adjust the maximum particle size of the dispersion by classification operation. At this time, the maximum particle size of the dispersion liquid can be 20 μm or less, and can also be 10 μm or less.
無加圧接合用銅ペーストは、サブマイクロ銅粒子、表面処理剤、分散媒である３００℃以上の沸点を有する溶媒をあらかじめ混合して、分散処理を行ってサブマイクロ銅粒子の分散液を調製し、更にマイクロ銅粒子、その他の金属粒子及び任意の添加剤を混合して調製してもよい。このような手順とすることで、サブマイクロ銅粒子の分散性が向上してマイクロ銅粒子との混合性が良くなり、無加圧接合用銅ペーストの性能をより向上させることができる。サブマイクロ銅粒子の分散液を分級操作によって凝集物を除去してもよい。 The copper paste for pressureless bonding is prepared by mixing sub-micro copper particles, a surface treatment agent, and a solvent having a boiling point of 300 ° C. or higher, which is a dispersion medium, and performing dispersion treatment to prepare a dispersion of sub-micro copper particles. Furthermore, micro copper particles, other metal particles, and optional additives may be mixed. By setting it as such a procedure, the dispersibility of a sub micro copper particle improves, a miscibility with a micro copper particle improves, and the performance of the copper paste for pressureless joining can be improved more. Aggregates may be removed from the sub-micro copper particle dispersion by classification.
撹拌処理は、撹拌機を用いて行うことができる。撹拌機としては、例えば、石川式攪拌機、シルバーソン攪拌機、キャビテーション攪拌機、自転公転型攪拌装置、超薄膜高速回転式分散機、超音波分散機、ライカイ機、二軸混練機、ビーズミル、ボールミル、三本ロールミル、ホモミキサー、プラネタリーミキサー、超高圧型分散機、薄層せん断分散機が挙げられる。 The stirring treatment can be performed using a stirrer. Examples of the stirrer include, for example, Ishikawa stirrer, Silverson stirrer, cavitation stirrer, rotation / revolution stirrer, ultra-thin high-speed rotary disperser, ultrasonic disperser, reika machine, twin-screw kneader, bead mill, ball mill, three Examples thereof include a roll mill, a homomixer, a planetary mixer, an ultra-high pressure type disperser, and a thin layer shear disperser.
分級操作は、例えば、ろ過、自然沈降、遠心分離を用いて行うことができる。ろ過用のフィルタとしては、例えば、水櫛、金属メッシュ、メタルフィルター、ナイロンメッシュが挙げられる。 Classification operation can be performed using filtration, natural sedimentation, and centrifugation, for example. Examples of the filter for filtration include a water comb, a metal mesh, a metal filter, and a nylon mesh.
分散処理としては、例えば、薄層せん断分散機、ビーズミル、超音波ホモジナイザー、ハイシアミキサー、狭ギャップ三本ロールミル、湿式超微粒化装置、超音速式ジェットミル、超高圧ホモジナイザーが挙げられる。 Examples of the dispersion treatment include a thin layer shear disperser, a bead mill, an ultrasonic homogenizer, a high shear mixer, a narrow gap three-roll mill, a wet super atomizer, a supersonic jet mill, and an ultra high pressure homogenizer.
無加圧接合用銅ペーストは、成型する場合には各々の印刷・塗布手法に適した粘度に調整してもよい。無加圧接合用銅ペーストの粘度としては、例えば、２５℃におけるＣａｓｓｏｎ粘度が０．０５Ｐａ・ｓ以上２．０Ｐａ・ｓ以下であってもよく、０．０６Ｐａ・ｓ以上１．０Ｐａ・ｓ以下であってもよい。 The copper paste for pressureless bonding may be adjusted to a viscosity suitable for each printing / coating method when molding. As the viscosity of the copper paste for pressureless bonding, for example, the Casson viscosity at 25 ° C. may be 0.05 Pa · s or more and 2.0 Pa · s or less, and 0.06 Pa · s or more and 1.0 Pa · s or less. There may be.
＜接合体及び半導体装置＞
以下、図面を参照しながら好適な実施形態について詳細に説明する。なお、図面中、同一又は相当部分には同一符号を付し、重複する説明は省略する。また、図面の寸法比率は、図示の比率に限られるものではない。
<Joint and semiconductor device>
Hereinafter, preferred embodiments will be described in detail with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference numerals, and redundant description is omitted. Further, the dimensional ratios in the drawings are not limited to the illustrated ratios.
図１は、本実施形態の無加圧接合用銅ペーストを用いて製造される接合体の一例を示す模式断面図である。本実施形態の接合体１００は、第一の部材２と、第一の部材とは異なる熱膨張率を有する第二の部材３と、第一の部材と第二の部材とを接合する上記無加圧接合用銅ペーストの焼結体１と、を備える。 FIG. 1 is a schematic cross-sectional view showing an example of a joined body manufactured using the pressure-free joining copper paste of the present embodiment. The joined body 100 of the present embodiment includes the first member 2, the second member 3 having a coefficient of thermal expansion different from that of the first member, and the first member and the second member. And a sintered body 1 of a copper paste for pressure bonding.
第一の部材２及び第二の部材３としては、例えば、ＩＧＢＴ、ダイオード、ショットキーバリヤダイオード、ＭＯＳ−ＦＥＴ、サイリスタ、ロジック、センサー、アナログ集積回路、ＬＥＤ、半導体レーザー、発信器等の半導体素子、リードフレーム、金属板貼付セラミックス基板（例えばＤＢＣ）、ＬＥＤパッケージ等の半導体素子搭載用基材、銅リボン、金属ブロック、端子等の給電用部材、放熱板、水冷板等が挙げられる。 As the first member 2 and the second member 3, for example, semiconductor elements such as IGBT, diode, Schottky barrier diode, MOS-FET, thyristor, logic, sensor, analog integrated circuit, LED, semiconductor laser, transmitter, etc. , A lead frame, a ceramic substrate with a metal plate (for example, DBC), a substrate for mounting a semiconductor element such as an LED package, a power supply member such as a copper ribbon, a metal block, and a terminal, a radiator plate, and a water-cooled plate.
第一の部材２及び第二の部材３は、無加圧接合用銅ペーストの焼結体と接する面４ａ及び４ｂに金属を含んでいてもよい。金属としては、例えば、銅、ニッケル、銀、金、パラジウム、白金、鉛、錫、コバルト等が挙げられる。金属は、１種を単独で使用してもよく、２種以上を組み合わせて使用してもよい。また、焼結体と接する面は、上記金属を含む合金であってもよい。合金に用いられる金属としては、上記金属の他に、亜鉛、マンガン、アルミニウム、ベリリウム、チタン、クロム、鉄、モリブデン等が挙げられる。焼結体と接する面に金属を含む部材としては、例えば、各種金属メッキを有する部材、ワイヤ、金属メッキを有するチップ、ヒートスプレッダ、金属板が貼り付けられたセラミックス基板、各種金属メッキを有するリードフレーム又は各種金属からなるリードフレーム、銅板、銅箔が挙げられる。 The 1st member 2 and the 2nd member 3 may contain the metal in the surfaces 4a and 4b which contact the sintered compact of the copper paste for pressureless joining. Examples of the metal include copper, nickel, silver, gold, palladium, platinum, lead, tin, and cobalt. A metal may be used individually by 1 type and may be used in combination of 2 or more type. Further, the surface in contact with the sintered body may be an alloy containing the above metal. Examples of the metal used for the alloy include zinc, manganese, aluminum, beryllium, titanium, chromium, iron, and molybdenum in addition to the above metals. Examples of the member containing metal on the surface in contact with the sintered body include, for example, a member having various metal plating, a wire, a chip having metal plating, a heat spreader, a ceramic substrate to which a metal plate is attached, and a lead frame having various metal plating. Or the lead frame which consists of various metals, a copper plate, and copper foil are mentioned.
接合体のダイシェア強度は、第一の部材及び第二の部材を十分に接合するという観点から、１０ＭＰａ以上であってもよく、１５ＭＰａ以上であってもよく、２０ＭＰａ以上であってもよく、３０ＭＰａ以上であってもよい。ダイシェア強度は、万能型ボンドテスタ（４０００シリーズ、ＤＡＧＥ社製）等を用いて測定することができる。 The die shear strength of the joined body may be 10 MPa or more, 15 MPa or more, 20 MPa or more, or 30 MPa from the viewpoint of sufficiently joining the first member and the second member. It may be the above. The die shear strength can be measured using a universal bond tester (4000 series, manufactured by DAGE) or the like.
無加圧接合用銅ペーストの焼結体の熱伝導率は、放熱性及び高温化での接続信頼性という観点から、１００Ｗ／（ｍ・Ｋ）以上であってもよく、１２０Ｗ／（ｍ・Ｋ）以上であってもよく、１５０Ｗ／（ｍ・Ｋ）以上であってもよい。熱伝導率は、無加圧接合用銅ペーストの焼結体の熱拡散率、比熱容量、及び密度から、算出することができる。 The thermal conductivity of the sintered body of the copper paste for pressureless bonding may be 100 W / (m · K) or more, and 120 W / (m · K) from the viewpoint of heat dissipation and connection reliability at high temperatures. ) Or higher, or 150 W / (m · K) or higher. The thermal conductivity can be calculated from the thermal diffusivity, specific heat capacity, and density of the sintered body of the copper paste for pressureless bonding.
第一の部材と第二の部材の熱膨張率の差は、２ｐｐｍ〜３０ｐｐｍであってもよく、３ｐｐｍ〜２３ｐｐｍであってもよく、５ｐｐｍ〜１５ｐｐｍであってもよい。 The difference in coefficient of thermal expansion between the first member and the second member may be 2 ppm to 30 ppm, 3 ppm to 23 ppm, or 5 ppm to 15 ppm.
次に、本実施形態の無加圧接合用銅ペーストを用いた接合体の製造方法について説明する。 Next, the manufacturing method of the joined body using the copper paste for pressureless joining of this embodiment is demonstrated.
本実施形態の無加圧接合用銅ペーストを用いた接合体の製造方法は、第一の部材、該第一の部材の自重が働く方向側に、上記無加圧接合用銅ペースト、及び第一の部材とは異なる熱膨張率を有する第二の部材がこの順に積層された積層体を用意し、無加圧接合用銅ペーストを、第一の部材の自重、又は第一の部材の自重及び０．０１ＭＰａ以下の圧力を受けた状態で焼結する工程を備える。第一の部材の自重が働く方向とは、重力が働く方向ということもできる。 The manufacturing method of the joined body using the non-pressure bonding copper paste of the present embodiment includes the first member, the non-pressure bonding copper paste, and the first member on the side in which the weight of the first member acts. A laminate in which a second member having a coefficient of thermal expansion different from that of the member is laminated in this order is prepared, and the non-pressure bonding copper paste is used for the weight of the first member or the weight of the first member and the weight of the first member. A step of sintering under a pressure of 01 MPa or less. The direction in which the weight of the first member works can also be said to be the direction in which gravity works.
上記積層体は、例えば、第二の部材の必要な部分に本実施形態の無加圧接合用銅ペーストを設け、次いで無加圧接合用銅ペースト上に第一の部材を配置することにより用意することができる。 The laminate is prepared by, for example, providing the pressure-free bonding copper paste of the present embodiment on a necessary portion of the second member and then placing the first member on the pressure-free bonding copper paste. Can do.
本実施形態の無加圧接合用銅ペーストを、第二の部材の必要な部分に設ける方法としては、無加圧接合用銅ペーストを堆積させられる方法であればよい。このような方法としては、例えば、スクリーン印刷、転写印刷、オフセット印刷、ジェットプリンティング法、ディスペンサー、ジェットディスペンサ、ニードルディスペンサ、カンマコータ、スリットコータ、ダイコータ、グラビアコータ、スリットコート、凸版印刷、凹版印刷、グラビア印刷、ステンシル印刷、ソフトリソグラフ、バーコート、アプリケータ、粒子堆積法、スプレーコータ、スピンコータ、ディップコータ、電着塗装等を用いることができる。無加圧接合用銅ペーストの厚みは、１μｍ以上１０００μｍ以下であってもよく、１０μｍ以上５００μｍ以下であってもよく、５０μｍ以上２００μｍ以下であってもよく、１０μｍ以上３０００μｍ以下であってもよく、１５μｍ以上５００μｍ以下であってもよく、２０μｍ以上３００μｍ以下であってもよく、５μｍ以上５００μｍ以下であってもよく、１０μｍ以上２５０μｍ以下であってもよく、１５μｍ以上１５０μｍ以下であってもよい。 As a method for providing the pressure-free bonding copper paste of the present embodiment on a necessary portion of the second member, any method may be used as long as the pressure-free bonding copper paste is deposited. Examples of such methods include screen printing, transfer printing, offset printing, jet printing, dispenser, jet dispenser, needle dispenser, comma coater, slit coater, die coater, gravure coater, slit coat, letterpress printing, intaglio printing, gravure printing. Printing, stencil printing, soft lithography, bar coating, applicator, particle deposition method, spray coater, spin coater, dip coater, electrodeposition coating, and the like can be used. The thickness of the copper paste for pressureless bonding may be 1 μm or more and 1000 μm or less, 10 μm or more and 500 μm or less, 50 μm or more and 200 μm or less, or 10 μm or more and 3000 μm or less, It may be 15 μm or more and 500 μm or less, 20 μm or more and 300 μm or less, 5 μm or more and 500 μm or less, 10 μm or more and 250 μm or less, or 15 μm or more and 150 μm or less.
第二の部材上に設けられた無加圧接合用銅ペーストは、焼結時の流動及びボイドの発生を抑制する観点から、適宜乾燥させてもよい。乾燥時のガス雰囲気は大気中であってもよく、窒素、希ガス等の無酸素雰囲気中であってもよく、水素、ギ酸等の還元雰囲気中であってもよい。乾燥方法は、常温放置による乾燥であってもよく、加熱乾燥であってもよく、減圧乾燥であってもよい。加熱乾燥又は減圧乾燥には、例えば、ホットプレート、温風乾燥機、温風加熱炉、窒素乾燥機、赤外線乾燥機、赤外線加熱炉、遠赤外線加熱炉、マイクロ波加熱装置、レーザー加熱装置、電磁加熱装置、ヒーター加熱装置、蒸気加熱炉、熱板プレス装置等を用いることができる。乾燥の温度及び時間は、使用した分散媒の種類及び量に合わせて適宜調整してもよい。乾燥の温度及び時間としては、例えば、５０℃以上１８０℃以下で１分以上１２０分間以下乾燥させてもよい。 The pressure-free bonding copper paste provided on the second member may be appropriately dried from the viewpoint of suppressing flow and void generation during sintering. The gas atmosphere at the time of drying may be air, an oxygen-free atmosphere such as nitrogen or a rare gas, or a reducing atmosphere such as hydrogen or formic acid. The drying method may be drying at room temperature, drying by heating, or drying under reduced pressure. For heat drying or reduced pressure drying, for example, hot plate, hot air dryer, hot air heating furnace, nitrogen dryer, infrared dryer, infrared heating furnace, far infrared heating furnace, microwave heating device, laser heating device, electromagnetic A heating device, a heater heating device, a steam heating furnace, a hot plate press device, or the like can be used. The drying temperature and time may be appropriately adjusted according to the type and amount of the dispersion medium used. As the drying temperature and time, for example, the drying may be performed at 50 ° C. or higher and 180 ° C. or lower for 1 minute or longer and 120 minutes or shorter.
無加圧接合用銅ペースト上に第一の部材を配置する方法としては、例えば、チップマウンター、フリップチップボンダー、カーボン製又はセラミックス製の位置決め冶具が挙げられる。 Examples of the method for arranging the first member on the non-pressure bonding copper paste include a chip mounter, a flip chip bonder, a carbon or ceramic positioning jig.
積層体を加熱処理することで、無加圧接合用銅ペーストの焼結を行う。加熱処理には、例えば、ホットプレート、温風乾燥機、温風加熱炉、窒素乾燥機、赤外線乾燥機、赤外線加熱炉、遠赤外線加熱炉、マイクロ波加熱装置、レーザー加熱装置、電磁加熱装置、ヒーター加熱装置、蒸気加熱炉等を用いることができる。 The laminated body is heat treated to sinter the copper paste for pressureless bonding. For the heat treatment, for example, hot plate, hot air dryer, hot air heating furnace, nitrogen dryer, infrared dryer, infrared heating furnace, far infrared heating furnace, microwave heating device, laser heating device, electromagnetic heating device, A heater heating device, a steam heating furnace, or the like can be used.
焼結時のガス雰囲気は、焼結体、第一の部材及び第二の部材の酸化抑制の観点から、無酸素雰囲気であってもよい。焼結時のガス雰囲気は、無加圧接合用銅ペーストの銅粒子の表面酸化物を除去するという観点から、還元雰囲気であってもよい。無酸素雰囲気としては、例えば、窒素、希ガス等の無酸素ガスの導入、又は真空下が挙げられる。還元雰囲気としては、例えば、純水素ガス中、フォーミングガスに代表される水素及び窒素の混合ガス中、ギ酸ガスを含む窒素中、水素及び希ガスの混合ガス中、ギ酸ガスを含む希ガス中等が挙げられる。 The gas atmosphere at the time of sintering may be an oxygen-free atmosphere from the viewpoint of suppressing oxidation of the sintered body, the first member, and the second member. The gas atmosphere at the time of sintering may be a reducing atmosphere from the viewpoint of removing the surface oxide of the copper particles of the copper paste for pressureless bonding. Examples of the oxygen-free atmosphere include introduction of oxygen-free gas such as nitrogen and rare gas, or under vacuum. Examples of the reducing atmosphere include pure hydrogen gas, hydrogen and nitrogen mixed gas typified by forming gas, nitrogen containing formic acid gas, hydrogen and rare gas mixed gas, and rare gas containing formic acid gas. Can be mentioned.
加熱処理時の到達最高温度は、第一の部材及び第二の部材への熱ダメージの低減及び歩留まりを向上させるという観点から、２５０℃以上４５０℃以下であってもよく、２５０℃以上４００℃以下であってもよく、２５０℃以上３５０℃以下であってもよい。到達最高温度が、２００℃以上であれば、到達最高温度保持時間が６０分以下において焼結が充分に進行する傾向にある。 The maximum temperature reached during the heat treatment may be 250 ° C. or higher and 450 ° C. or lower, from the viewpoint of reducing thermal damage to the first member and the second member and improving the yield, and may be 250 ° C. or higher and 400 ° C. or lower. Or 250 ° C. or more and 350 ° C. or less. If the ultimate temperature is 200 ° C. or higher, the sintering tends to proceed sufficiently when the ultimate temperature holding time is 60 minutes or less.
到達最高温度保持時間は、分散媒を充分に揮発させ、また、歩留まりを向上させるという観点から、１分以上６０分以下であってもよく、１分以上４０分未満であってもよく、１分以上３０分未満であってもよい。 The maximum temperature holding time may be 1 minute or more and 60 minutes or less, or 1 minute or more and less than 40 minutes from the viewpoint of sufficiently volatilizing the dispersion medium and improving the yield. More than 30 minutes may be sufficient.
本実施形態の無加圧接合用銅ペーストを用いることにより、積層体を焼結する際、無加圧での接合を行う場合であっても、接合体は充分な接合強度を有することができる。すなわち、無加圧接合用銅ペーストに積層した第一の部材による自重のみ、又は第一の部材の自重に加え、０．０１ＭＰａ以下、好ましくは０．００５ＭＰａ以下の圧力を受けた状態で、充分な接合強度を得ることができる。焼結時に受ける圧力が上記範囲内であれば、特別な加圧装置が不要なため歩留まりを損なうこと無く、ボイドの低減、ダイシェア強度及び接続信頼性をより一層向上させることができる。無加圧接合用銅ペーストが０．０１ＭＰａ以下の圧力を受ける方法としては、例えば、第一の部材上に重りを載せる方法等が挙げられる。 By using the copper paste for pressureless bonding of the present embodiment, the bonded body can have a sufficient bonding strength even when bonding without pressure is performed when the laminate is sintered. That is, only the weight of the first member laminated on the copper paste for pressureless bonding, or in addition to the weight of the first member, 0.01 MPa or less, preferably 0.005 MPa or less is sufficient. Bonding strength can be obtained. If the pressure applied during the sintering is within the above range, a special pressurizing device is not required, and the void reduction, die shear strength and connection reliability can be further improved without impairing the yield. Examples of the method in which the pressure-free bonding copper paste receives a pressure of 0.01 MPa or less include a method of placing a weight on the first member.
上記接合体において、第一の部材及び第二の部材の少なくとも一方は、半導体素子であってもよい。半導体素子としては、例えば、ダイオード、整流器、サイリスタ、ＭＯＳゲートドライバ、パワースイッチ、パワーＭＯＳＦＥＴ、ＩＧＢＴ、ショットキーダイオード、ファーストリカバリダイオード等からなるパワーモジュール、発信機、増幅器、ＬＥＤモジュール等が挙げられる。このような場合、上記接合体は半導体装置となる。得られる半導体装置は充分なダイシェア強度及び接続信頼性を有することができる。 In the joined body, at least one of the first member and the second member may be a semiconductor element. Examples of the semiconductor element include a power module including a diode, a rectifier, a thyristor, a MOS gate driver, a power switch, a power MOSFET, an IGBT, a Schottky diode, and a fast recovery diode, a transmitter, an amplifier, and an LED module. In such a case, the joined body is a semiconductor device. The obtained semiconductor device can have sufficient die shear strength and connection reliability.
半導体装置において、第一の部材と第二の部材の熱膨張率の差は、第一の部材と第二の部材の熱膨張率の差は、２ｐｐｍ〜３０ｐｐｍであってもよく、３ｐｐｍ〜２３ｐｐｍであってもよく、５ｐｐｍ〜１５ｐｐｍであってもよい。
In the semiconductor device, the difference in thermal expansion coefficient between the first member and the second member may be 2 ppm to 30 ppm, or 3 ppm to 23 ppm. It may be 5 ppm to 15 ppm.
図２は、本実施形態の無加圧接合用銅ペーストを用いて製造される半導体装置の一例を示す模式断面図である。図２に示す半導体装置１１０は、リードフレーム５ａ上に、本実施形態に係る無加圧接合用銅ペーストの焼結体１を介して接続された半導体素子８と、これらをモールドするモールドレジン７とからなる。半導体素子８は、ワイヤ６を介してリードフレーム５ｂに接続されている。 FIG. 2 is a schematic cross-sectional view showing an example of a semiconductor device manufactured using the pressure-free bonding copper paste of the present embodiment. A semiconductor device 110 shown in FIG. 2 includes a semiconductor element 8 connected on a lead frame 5a via a sintered body 1 of a copper paste for pressureless bonding according to the present embodiment, and a mold resin 7 for molding them. Consists of. The semiconductor element 8 is connected to the lead frame 5 b through the wire 6.
本実施形態の無加圧接合用銅ペーストを用いて製造される半導体装置としては、例えば、ダイオード、整流器、サイリスタ、ＭＯＳゲートドライバ、パワースイッチ、パワーＭＯＳＦＥＴ、ＩＧＢＴ、ショットキーダイオード、ファーストリカバリダイオード等からなるパワーモジュール、発信機、増幅器、高輝度ＬＥＤモジュール、半導体レーザーモジュール、ロジック、センサー等が挙げられる。 Examples of the semiconductor device manufactured using the pressure-free bonding copper paste of this embodiment include a diode, a rectifier, a thyristor, a MOS gate driver, a power switch, a power MOSFET, an IGBT, a Schottky diode, and a fast recovery diode. Power module, transmitter, amplifier, high-intensity LED module, semiconductor laser module, logic, sensor, and the like.
上記半導体装置は、上述した接合体の製造方法と同様にして製造することができる。すなわち、半導体装置の製造方法は、第一の部材及び第二の部材の少なくとも一方に半導体素子を用い、第一の部材、該第一の部材の自重が働く方向側に、上記無加圧接合用銅ペースト、及び第二の部材がこの順に積層された積層体を用意し、無加圧接合用銅ペーストを、第一の部材の自重、又は第一の部材の自重及び０．０１ＭＰａ以下の圧力を受けた状態で焼結する工程を備える。例えば、リードフレーム５ａ上に無加圧接合用銅ペーストを設け、半導体素子８を配置して加熱する工程が挙げられる。得られる半導体装置は、無加圧での接合を行った場合であっても、充分なダイシェア強度及び接続信頼性を有することができる。本実施形態の半導体装置は、充分な接合力を有し、熱伝導率及び融点が高い銅の焼結体を備えることにより、充分なダイシェア強度を有し、接続信頼性に優れるとともに、パワーサイクル耐性にも優れたものになり得る。 The semiconductor device can be manufactured in the same manner as the above-described manufacturing method of the joined body. That is, the method for manufacturing a semiconductor device uses a semiconductor element for at least one of the first member and the second member, and the first member and the non-pressure-bonding side in the direction in which the weight of the first member acts. Prepare a laminate in which the copper paste and the second member are laminated in this order, and apply the non-pressure bonding copper paste to the weight of the first member or the weight of the first member and the pressure of 0.01 MPa or less. A step of sintering in the received state. For example, a step of providing a pressure-free bonding copper paste on the lead frame 5a and placing and heating the semiconductor element 8 can be mentioned. The obtained semiconductor device can have sufficient die shear strength and connection reliability even when bonding is performed without applying pressure. The semiconductor device of the present embodiment has a sufficient bonding strength, and has a copper sintered body having a high thermal conductivity and a high melting point, thereby having a sufficient die shear strength, excellent connection reliability, and a power cycle. It can be excellent in tolerance.
［実施例１］
（無加圧接合用銅ペーストの調製）
サブマイクロ銅粒子としてＣＨ−０２００（５０％体積平均粒径 ０．３６μｍ、三井金属社製）を１５．８４ｇ（５２．８質量％）、３００℃以上の沸点を有する溶媒としてイソボルニルシクロヘキサノール（沸点３０８℃、以下、ＭＴＰＨと略す）を３．６ｇ（１２質量％）秤量し、自動乳鉢で５分間混合した。さらにこの混合物を、超音波ホモジナイザー（ＵＳ−６００、日本精機製社製）により１９．６ｋＨｚ、６００Ｗで１０分間分散処理を行った。
[Example 1]
(Preparation of pressureless copper paste)
15.84 g (52.8% by mass) of CH-0200 (50% volume average particle size 0.36 μm, manufactured by Mitsui Kinzoku Co., Ltd.) as sub-micro copper particles, isobornylcyclohexanol as a solvent having a boiling point of 300 ° C. or higher 3.6 g (12% by mass) of a boiling point of 308 ° C. (hereinafter abbreviated as MTPH) was weighed and mixed in an automatic mortar for 5 minutes. Furthermore, this mixture was subjected to a dispersion treatment at 19.6 kHz, 600 W for 10 minutes using an ultrasonic homogenizer (US-600, manufactured by Nippon Seiki Co., Ltd.).
分散処理した混合物をポリ瓶に移した後、マイクロ銅粒子としてＭＡ−Ｃ０２５ＫＦＤ（５０％体積平均粒径 ５μｍ、三井金属社製）を１０．５６ｇ（３５．２質量％）秤量して加え、２０００ｒｐｍ、２分間、減圧の条件でシンキー社製攪拌機（あわとり練太郎 ＡＲＥ−３１０）にかけて無加圧接合用銅ペーストを得た。 After the dispersion-treated mixture was transferred to a plastic bottle, MA-C025KFD (50% volume average particle size 5 μm, manufactured by Mitsui Kinzoku Co., Ltd.) was weighed and added as micro copper particles at 2000 rpm. A copper paste for non-pressure bonding was obtained by applying to a stirrer manufactured by Shinky Corporation (Awatori Netaro ARE-310) under reduced pressure for 2 minutes.
（固形分測定）
磁性るつぼに無加圧接合用銅ペーストを取り、磁性るつぼの風袋重量と無加圧接合用銅ペーストを入れた磁性るつぼの重量の差から、無加圧接合用銅ペーストの重量を得た。６００℃に加熱したマッフル炉に、無加圧接合用銅ペーストを入れた磁性るつぼを設置し、１時間処理した。処理後のるつぼ重量と磁性るつぼの風袋重量の差から、無加圧接合用銅ペーストの不揮発分の重量を得た。無加圧接合用銅ペーストの固形分（質量％）は以下の式から算出した。
無加圧接合用銅ペーストの固形分（質量％）＝｛（無加圧接合用銅ペーストの不揮発分の重量）／（加熱前の無加圧接合用銅ペーストの重量）｝×１００
(Solid content measurement)
The pressureless bonding copper paste was taken into the magnetic crucible, and the weight of the pressureless bonding copper paste was obtained from the difference between the weight of the magnetic crucible and the weight of the magnetic crucible containing the pressureless bonding copper paste. A magnetic crucible containing a copper paste for pressureless bonding was placed in a muffle furnace heated to 600 ° C. and treated for 1 hour. From the difference between the weight of the crucible after the treatment and the tare weight of the magnetic crucible, the weight of the nonvolatile content of the copper paste for pressureless bonding was obtained. The solid content (mass%) of the copper paste for pressureless bonding was calculated from the following equation.
Solid content (mass%) of copper paste for pressureless bonding = {(weight of non-volatile content of copper paste for pressureless bonding) / (weight of copper paste for pressureless bonding before heating)} × 100
（残溶媒割合の測定）
室温（２５℃）から３００℃まで昇温したときにおける、無加圧接合用銅ペースト中に残存する分散媒の割合（残溶媒割合）を計測した。銅板及びチップの質量を計測後、銅板上に無加圧接合用銅ペーストを印刷し、その上にチップを搭載し、積層体を得た。この段階で積層体の質量を計測した。積層体を窒素下のオーブンで２５℃から３００℃まで３０分で昇温した後、積層体を取り出し、真鍮ブロック上で急速冷却した。冷却後の積層体の質量を測定し、３００℃到達時の質量とした。３００℃到達時の残溶媒割合を以下の式から算出した。
When the temperature was raised from room temperature (25 ° C.) to 300 ° C., the ratio of the dispersion medium (residual solvent ratio) remaining in the pressure-free bonding copper paste was measured. After measuring the mass of the copper plate and the chip, a copper paste for pressureless bonding was printed on the copper plate, and the chip was mounted thereon to obtain a laminate. At this stage, the mass of the laminate was measured. The laminate was heated in an oven under nitrogen from 25 ° C. to 300 ° C. in 30 minutes, and then the laminate was taken out and rapidly cooled on a brass block. The mass of the laminated body after cooling was measured and taken as the mass when reaching 300 ° C. The residual solvent ratio when reaching 300 ° C. was calculated from the following formula.
（ダイシェア強度試験用接合サンプルの作製）
（Ｓｉチップを用いた接合サンプル）
３×３ｍｍ２の正方形の開口を有する厚さ７５μｍのステンレスマスクとスキージを用いて、無加圧接合用銅ペーストを、サイズ２５×２０×厚さ３ｍｍの銅板上にステンシル印刷した。無加圧接合用銅ペーストの印刷物上に、厚さ４００μｍ、サイズ３×３ｍｍの接合面全面にチタン／ニッケルがこの順でスパッタされたＳｉチップ（被着面ニッケル）をニッケル面が無加圧接合用銅ペースト組成物に接するように置き、チップをピンセットで軽く押さえてニッケル面と無加圧接合用銅ペーストを密着させた。これを管状炉に設置し、内部をアルゴンガス置換し、その後水素を導入して昇温３０分、３００℃、１０分の条件で焼結した。その後、水素を止め、アルゴン気流下で５０℃以下まで冷却し、空気中に接合サンプルを取り出した。
(Preparation of bonded sample for die shear strength test)
(Joint sample using Si chip)
Using a 75 μm thick stainless steel mask having a 3 × 3 mm 2 square opening and a squeegee, a pressure-free bonding copper paste was stencil-printed on a copper plate of size 25 × 20 × 3 mm thick. For non-pressure bonding of Si chip (coated surface nickel) with titanium / nickel sputtered in this order on the entire bonding surface of 400 μm thickness and size 3 × 3 mm on printed matter of copper paste for pressureless bonding The chip was placed in contact with the copper paste composition, and the chip was lightly pressed with tweezers to adhere the nickel surface and the copper paste for pressureless bonding. This was installed in a tubular furnace, the inside was replaced with argon gas, hydrogen was then introduced, and sintering was performed under conditions of a temperature increase of 30 minutes, 300 ° C., and 10 minutes. Then, hydrogen was stopped, it cooled to 50 degrees C or less under argon stream, and the joining sample was taken out in the air.
（Ｃｕ板を用いた接合サンプル）
厚さ２５０μｍ、サイズ２×２ｍｍの全面にニッケルがめっきされたＣｕ板（被着面ニッケル）を用いた以外は上記と同様にして接合サンプルを作製した。
(Joint sample using Cu plate)
A bonded sample was produced in the same manner as described above except that a Cu plate (nickel to be deposited) having a thickness of 250 μm and a size of 2 × 2 mm and plated with nickel was used.
（ダイシェア強度試験）
ダイシェア強度サンプルの接合強度は、ダイシェア強度により評価した。接合サンプルを、ＤＳ−１００ロードセルを装着した万能型ボンドテスタ（４０００シリーズ、デイジ・ジャパン株式会社製）を用い、測定スピード５ｍｍ／ｍｉｎ、測定高さ５０μｍでＳｉチップ、又はＣｕ板を水平方向に押し、ダイシェア強度を測定した。ダイシェア強度２０ＭＰａ以上を接合良好とした。
(Die shear strength test)
The joint strength of the die shear strength sample was evaluated by die shear strength. Using a universal bond tester (4000 series, manufactured by Daisy Japan Co., Ltd.) equipped with a DS-100 load cell, press the Si chip or Cu plate in the horizontal direction at a measurement speed of 5 mm / min and a measurement height of 50 μm. The die shear strength was measured. A die shear strength of 20 MPa or more was considered good bonding.
［比較例１］
イソボルニルシクロヘキサノールを用いず、α−テルピネオール（沸点２２０℃）を９．０質量部用いたこと以外は、実施例１と同様にして無加圧接合用銅ペーストを得た。この無加圧接合用銅ペーストを用いたこと以外は、実施例１と同様にしてダイシェア強度を測定した。結果を表１に示す。
[Comparative Example 1]
A copper paste for pressureless bonding was obtained in the same manner as in Example 1 except that 9.0 parts by mass of α-terpineol (boiling point 220 ° C.) was used without using isobornylcyclohexanol. The die shear strength was measured in the same manner as in Example 1 except that this pressureless bonding copper paste was used. The results are shown in Table 1.
分散媒の一部を沸点３０８℃のＭＴＰＨとした実施例１のサンプルでは、Ｓｉチップに対して３１ＭＰａの良好なダイシェア強度を示した。一方、３００℃以上の沸点を有する溶媒を含まない無加圧接合用銅ペーストを用いた比較例１のサンプルでは、Ｓｉチップに対するダイシェア強度は９ＭＰａであり、接合不良となった。 The sample of Example 1 in which part of the dispersion medium was MTPH having a boiling point of 308 ° C. showed a good die shear strength of 31 MPa with respect to the Si chip. On the other hand, in the sample of Comparative Example 1 using the non-pressure bonding copper paste containing no solvent having a boiling point of 300 ° C. or higher, the die shear strength with respect to the Si chip was 9 MPa, resulting in poor bonding.
残溶媒割合を測定すると、実施例１では３００℃到達時にも１．２質量％の溶剤が残存していた。これは体積では１０体積％になり、この残溶媒が、銅板とＳｉチップとの熱膨張率差により無加圧接合用銅ペーストにかかる変位を十分吸収できるだけの可撓性及び密着性を、無加圧接合用銅ペーストに与えたと考えられる。一方、比較例１では３００℃到達時における残存する溶媒は０．３質量％であり、また体積では３体積％だった。そのため、比較例１の無加圧接合用銅ペーストでは、粒子間に十分な溶剤が存在せず、熱膨張率差による変位で無加圧接合用銅ペーストがチップと剥離してダイシェア強度が低下したと考えられる。 When the residual solvent ratio was measured, in Example 1, 1.2% by mass of the solvent remained even when 300 ° C. was reached. This is 10% by volume in volume, and the residual solvent does not add flexibility and adhesion enough to absorb the displacement applied to the copper paste for pressureless bonding due to the difference in thermal expansion coefficient between the copper plate and the Si chip. It is thought that it was given to the copper paste for pressure bonding. On the other hand, in Comparative Example 1, the remaining solvent when reaching 300 ° C. was 0.3% by mass, and the volume was 3% by volume. Therefore, in the copper paste for pressureless bonding of Comparative Example 1, there is not enough solvent between the particles, and the copper paste for pressureless bonding peels off from the chip due to the displacement due to the difference in thermal expansion coefficient and the die shear strength decreases. Conceivable.
銅基板とＳｉチップとを接合したダイボンド部のＳｉチップ／ダイボンド層界面の断面ＳＥＭ像を観察した。ＳＥＭ像の観察に用いた試験サンプルは、（ダイシェア強度試験用接合サンプルの作製）で作製したものを用いた。実施例１の断面ＳＥＭ像を図３に示し、比較例１の断面ＳＥＭ像を図４に示す。実施例１のサンプルでは、Ｔｉ／Ｎｉメッキ層１０を有するシリコンチップ９と、無加圧接合用銅ペーストの焼結体１１とは良好に接合していた。一方、比較例１のサンプルでは、Ｔｉ／Ｎｉメッキ層１０を有するシリコンチップ９と、無加圧接合用銅ペーストの焼結体１１との間に剥離部（クラック）１２が生じたため、接合不良となっていた。これは、銅基板とＳｉチップの熱膨張率の差による変位で、接合前にＳｉチップ／ダイボンド層界面で剥離したものと考えられる。 A cross-sectional SEM image of the Si chip / die bond layer interface of the die bond portion where the copper substrate and the Si chip were joined was observed. The test sample used for the observation of the SEM image was the one prepared in (Preparation of a die shear strength test bonded sample). A cross-sectional SEM image of Example 1 is shown in FIG. 3, and a cross-sectional SEM image of Comparative Example 1 is shown in FIG. In the sample of Example 1, the silicon chip 9 having the Ti / Ni plating layer 10 and the sintered body 11 of the copper paste for pressureless bonding were bonded satisfactorily. On the other hand, in the sample of Comparative Example 1, since a peeled portion (crack) 12 was generated between the silicon chip 9 having the Ti / Ni plating layer 10 and the sintered body 11 of the copper paste for pressureless bonding, It was. This is a displacement due to the difference in coefficient of thermal expansion between the copper substrate and the Si chip, and is considered to have peeled off at the Si chip / die bond layer interface before bonding.
［実施例２〜５、比較例２］
（銅ペースト組成物の調製）
３００℃以上の沸点を有する溶媒としてイソボルニルシクロヘキサノール（沸点３０８℃、以下、ＭＴＰＨと略す）、その他の溶媒としてα−テルピネオール（沸点２２０℃）を表２の割合に従って混合した。そこに、マイクロ銅粒子としてＭＡ−Ｃ０２５ＫＦＤ（５０％体積平均粒径５μｍ、三井金属社製）を１０．５６ｇ（３５．２質量％）、サブマイクロ銅粒子としてＣＨ−０２００（５０％体積平均粒径０．３６μｍ、三井金属社製）を１５．８４ｇ（５２．８質量％）を秤量し、自動乳鉢で５分間混合した。混合物をポリ瓶に移した後、２０００ｒｐｍ、２分間、減圧の条件でシンキー社製攪拌機（あわとり練太郎 ＡＲＥ−３１０）にかけて無加圧接合用銅ペースト組成物を得た。
[Examples 2 to 5, Comparative Example 2]
(Preparation of copper paste composition)
As a solvent having a boiling point of 300 ° C. or higher, isobornylcyclohexanol (boiling point 308 ° C., hereinafter abbreviated as MTPH) and α-terpineol (boiling point 220 ° C.) as other solvents were mixed according to the ratio in Table 2. There, 10.56 g (35.2 mass%) of MA-C025KFD (50% volume average particle size 5 μm, manufactured by Mitsui Kinzoku Co., Ltd.) as micro copper particles, and CH-0200 (50% volume average particle) as sub-micro copper particles. 15.84 g (52.8% by mass) of 0.36 μm in diameter (manufactured by Mitsui Kinzoku Co., Ltd.) was weighed and mixed for 5 minutes in an automatic mortar. After the mixture was transferred to a plastic bottle, a copper paste composition for pressureless bonding was obtained by applying it to a stirrer manufactured by Shinky Corporation (Awatori Netaro ARE-310) under reduced pressure at 2000 rpm for 2 minutes.
（ダイシェア試験サンプル作製）
実施例１と同様にしてサイズ３×３ｍｍの接合面全面にチタン／ニッケルがこの順でスパッタされたＳｉチップを用いた接合サンプル（Ｓｉ）を作製した。さらにサイズ２×２ｍｍの全面にニッケルがめっきされた銅板を用いて，実施例１と同様にして接合した接合サンプル(銅板)を作製した。それぞれの接合サンプルに対し、ダイシェア強度を実施例１と同様にして測定した。表２及び図５に結果を示す。
(Die shear test sample preparation)
In the same manner as in Example 1, a joining sample (Si) using a Si chip in which titanium / nickel was sputtered in this order on the entire joining surface having a size of 3 × 3 mm was produced. Further, a joined sample (copper plate) joined in the same manner as in Example 1 was prepared using a copper plate having a size of 2 × 2 mm and plated with nickel. The die shear strength of each bonded sample was measured in the same manner as in Example 1. The results are shown in Table 2 and FIG.
［実施例６］
３００℃以上の沸点を有する溶媒としてトリブチリン（沸点３１０℃）を用いたこと以外は、実施例１と同様にして無加圧接合用銅ペーストを調製した。この無加圧接合用銅ペーストを用いたこと以外は、実施例１と同様にしてサイズ３×３ｍｍの接合面全面にチタン／ニッケルがこの順でスパッタされたＳｉチップを用いた接合サンプル（Ｓｉ）を作製し、ダイシェア強度を測定した。その結果、ダイシェア強度は２０ＭＰａと良好な値を示した。
[Example 6]
A copper paste for pressureless bonding was prepared in the same manner as in Example 1 except that tributyrin (boiling point 310 ° C.) was used as a solvent having a boiling point of 300 ° C. or higher. A bonding sample (Si) using a Si chip in which titanium / nickel was sputtered in this order over the entire bonding surface of size 3 × 3 mm in the same manner as in Example 1 except that this pressureless bonding copper paste was used. The die shear strength was measured. As a result, the die shear strength was as good as 20 MPa.
［実施例７］
３００℃以上の沸点を有する溶媒としてファインオキソコール１８０（イソオクタデカノール、沸点３０２℃、日産化学工業社製）を用いたこと以外は、実施例１と同様にして無加圧接合用銅ペーストを調製した。この無加圧接合用銅ペーストを用いたこと以外は、実施例１と同様にしてサイズ３×３ｍｍの接合面全面にチタン／ニッケルがこの順でスパッタされたＳｉチップを用いた接合サンプル（Ｓｉ）を作製し、ダイシェア強度を測定した。その結果、ダイシェア強度は２３ＭＰａと良好な値を示した。
[Example 7]
A copper paste for pressureless bonding was used in the same manner as in Example 1 except that fine oxocol 180 (isooctadecanol, boiling point 302 ° C., manufactured by Nissan Chemical Industries, Ltd.) was used as a solvent having a boiling point of 300 ° C. or higher. Prepared. A bonding sample (Si) using a Si chip in which titanium / nickel was sputtered in this order over the entire bonding surface of size 3 × 3 mm in the same manner as in Example 1 except that this pressureless bonding copper paste was used. The die shear strength was measured. As a result, the die shear strength was a good value of 23 MPa.
［実施例８］
３００℃以上の沸点を有する溶媒としてステアリン酸ブチル（沸点３４３℃）を用いたこと以外は、実施例１と同様にして無加圧接合用銅ペーストを調製した。この無加圧接合用銅ペーストを用いたこと以外は、実施例１と同様にしてサイズ３×３ｍｍの接合面全面にチタン／ニッケルがこの順でスパッタされたＳｉチップを用いた接合サンプル（Ｓｉ）を作製し、ダイシェア強度を測定した。その結果、ダイシェア強度は２５ＭＰａと良好な値を示した。
[Example 8]
A copper paste for pressureless bonding was prepared in the same manner as in Example 1 except that butyl stearate (boiling point 343 ° C.) was used as a solvent having a boiling point of 300 ° C. or higher. A bonding sample (Si) using a Si chip in which titanium / nickel was sputtered in this order over the entire bonding surface of size 3 × 3 mm in the same manner as in Example 1 except that this pressureless bonding copper paste was used. The die shear strength was measured. As a result, the die shear strength was a favorable value of 25 MPa.
［実施例９］
３００℃以上の沸点を有する溶剤組成物としてオクタン酸オクチル（沸点３１１℃）を用いたこと以外は、実施例１と同様にして無加圧接合用銅ペーストを調製した。この無加圧接合用銅ペーストを用いたこと以外は、実施例１と同様にしてサイズ３×３ｍｍの接合面全面にチタン／ニッケルがこの順でスパッタされたＳｉチップを用いた接合サンプル（Ｓｉ）を作製し、ダイシェア強度を測定した。その結果、ダイシェア強度は２６ＭＰａと良好な値を示した。
[Example 9]
A copper paste for pressureless bonding was prepared in the same manner as in Example 1 except that octyl octoate (boiling point 311 ° C.) was used as the solvent composition having a boiling point of 300 ° C. or higher. A bonding sample (Si) using a Si chip in which titanium / nickel was sputtered in this order over the entire bonding surface of size 3 × 3 mm in the same manner as in Example 1 except that this pressureless bonding copper paste was used. The die shear strength was measured. As a result, the die shear strength was a good value of 26 MPa.
［比較例３］
分散媒としてジエチレングリコールモノブチルエーテル（沸点２３０℃、以下ＤＥＧＢＥと略す）を用いたこと以外は、実施例１と同様にして無加圧接合用銅ペーストを調製した。この無加圧接合用銅ペーストを用いたこと以外は、実施例１と同様にしてサイズ３×３ｍｍの接合面全面にチタン／ニッケルがこの順でスパッタされたＳｉチップを用いた接合サンプル（Ｓｉ）を作製し、ダイシェア強度を測定した。その結果、ダイシェア強度は６ＭＰａであり、接続不良と判断した。
[Comparative Example 3]
A copper paste for pressureless bonding was prepared in the same manner as in Example 1 except that diethylene glycol monobutyl ether (boiling point: 230 ° C., hereinafter abbreviated as DEGBE) was used as the dispersion medium. A bonding sample (Si) using a Si chip in which titanium / nickel was sputtered in this order over the entire bonding surface of size 3 × 3 mm in the same manner as in Example 1 except that this pressureless bonding copper paste was used. The die shear strength was measured. As a result, the die shear strength was 6 MPa, and it was determined that the connection was poor.
［比較例４］
分散媒としてジエチレングリコールモノブチルエーテルアセテート（沸点２４７℃、以下ＢＤＧＡＣと略す）を用いたこと以外は、実施例１と同様にして無加圧接合用銅ペーストを調製した。この無加圧接合用銅ペーストを用いたこと以外は、実施例１と同様にしてサイズ３×３ｍｍの接合面全面にチタン／ニッケルがこの順でスパッタされたＳｉチップを用いた接合サンプル（Ｓｉ）を作製し、ダイシェア強度を測定した。その結果、ダイシェア強度は５ＭＰａであり、接続不良と判断した。
[Comparative Example 4]
A copper paste for pressureless bonding was prepared in the same manner as in Example 1 except that diethylene glycol monobutyl ether acetate (boiling point 247 ° C., hereinafter abbreviated as BDGAC) was used as the dispersion medium. A bonding sample (Si) using a Si chip in which titanium / nickel was sputtered in this order over the entire bonding surface of size 3 × 3 mm in the same manner as in Example 1 except that this pressureless bonding copper paste was used. The die shear strength was measured. As a result, the die shear strength was 5 MPa, and it was determined that the connection was poor.
表３に実施例６〜９及び比較例３、４の結果を示す。図６には、実施例１、６、７、８、９及び比較例１、３、４の無加圧接合用銅ペーストを用いた接合サンプル（Ｓｉ）のダイシェア強度を溶媒の沸点に対してプロットした。３００℃以上の沸点を有する溶媒を用いた実施例では、いずれも２０ＭＰａ以上の良好なダイシェア強度が得られた。一方、３００℃より低い沸点を有する溶媒を用いた比較例ではいずれも９ＭＰａ以下の低いダイシェア強度となり、接合不良だった。 Table 3 shows the results of Examples 6 to 9 and Comparative Examples 3 and 4. In FIG. 6, the die shear strength of the joining sample (Si) using the copper paste for pressureless joining in Examples 1, 6, 7, 8, and 9 and Comparative Examples 1, 3, and 4 is plotted against the boiling point of the solvent. did. In Examples using a solvent having a boiling point of 300 ° C. or higher, good die shear strength of 20 MPa or higher was obtained. On the other hand, in the comparative examples using a solvent having a boiling point lower than 300 ° C., all had low die shear strength of 9 MPa or less, resulting in poor bonding.
１…無加圧接合用銅ペーストの焼結体、２…第一の部材、３…第二の部材、５ａ、５ｂ…リードフレーム、６…ワイヤ、７…モールドレジン、８…半導体素子、９…シリコンチップ、１０…Ｔｉ／Ｎｉメッキ層、１１…無加圧接合用銅ペーストの焼結体、１２…剥離部。 DESCRIPTION OF SYMBOLS 1 ... Sintered body of copper paste for pressureless joining, 2 ... 1st member, 3 ... 2nd member, 5a, 5b ... Lead frame, 6 ... Wire, 7 ... Mold resin, 8 ... Semiconductor element, 9 ... Silicon chip, 10... Ti / Ni plating layer, 11... Sintered body of copper paste for pressureless bonding, 12.
Claims (8)
前記金属粒子が、体積平均粒径が０．０１μｍ以上０．８μｍ以下のサブマイクロ銅粒子と、体積平均粒径が２．０μｍ以上５０μｍ以下のマイクロ銅粒子とを含み、
前記分散媒が３００℃以上の沸点を有する溶媒を含み、前記３００℃以上の沸点を有する溶媒の含有量が、前記無加圧接合用銅ペーストの全質量を基準として、２質量％以上である、無加圧接合用銅ペースト。 A copper paste for pressureless bonding comprising metal particles and a dispersion medium,
The metal particles include sub-micro copper particles having a volume average particle size of 0.01 μm or more and 0.8 μm or less, and micro copper particles having a volume average particle size of 2.0 μm or more and 50 μm or less,
The dispersion medium contains a solvent having a boiling point of 300 ° C. or higher, and the content of the solvent having a boiling point of 300 ° C. or higher is 2% by mass or more based on the total mass of the pressure-free bonding copper paste. Copper paste for pressureless bonding.
前記金属粒子が、体積平均粒径が０．０１μｍ以上０．８μｍ以下のサブマイクロ銅粒子と、体積平均粒径が２．０μｍ以上５０μｍ以下のマイクロ銅粒子とを含み、
前記分散媒が３００℃以上の沸点を有する溶媒を含み、前記３００℃以上の沸点を有する溶媒の含有量が、前記無加圧接合用銅ペーストの全容量を基準として、８体積％以上である、無加圧接合用銅ペースト。 A copper paste for pressureless bonding comprising metal particles and a dispersion medium,
The metal particles include sub-micro copper particles having a volume average particle size of 0.01 μm or more and 0.8 μm or less, and micro copper particles having a volume average particle size of 2.0 μm or more and 50 μm or less,
The dispersion medium contains a solvent having a boiling point of 300 ° C. or higher, and the content of the solvent having a boiling point of 300 ° C. or higher is 8% by volume or more based on the total capacity of the copper paste for pressureless bonding. Copper paste for pressureless bonding.
前記第一の部材及び前記第二の部材の少なくとも一方が半導体素子である、半導体装置。 The first member, a second member having a coefficient of thermal expansion different from that of the first member, and the first member and the second member are joined together. And a sintered body of the copper paste for pressureless bonding described in
A semiconductor device, wherein at least one of the first member and the second member is a semiconductor element.
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