JP2017085145A - レーザ処理システム内の粒子制御 - Google Patents
レーザ処理システム内の粒子制御 Download PDFInfo
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- 239000000758 substrate Substances 0.000 claims abstract description 65
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- 239000011248 coating agent Substances 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 12
- 238000004891 communication Methods 0.000 claims description 9
- 239000012530 fluid Substances 0.000 claims description 9
- 230000005855 radiation Effects 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 238000011109 contamination Methods 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000005350 fused silica glass Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 238000004616 Pyrometry Methods 0.000 claims 1
- 238000000137 annealing Methods 0.000 abstract description 19
- 238000010926 purge Methods 0.000 abstract description 10
- 239000000203 mixture Substances 0.000 abstract description 3
- 239000006227 byproduct Substances 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 21
- 238000000034 method Methods 0.000 description 21
- 239000002019 doping agent Substances 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 11
- 238000009529 body temperature measurement Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000004320 controlled atmosphere Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 231100000701 toxic element Toxicity 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
- B23K26/127—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in an enclosure
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
- B23K26/142—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor for the removal of by-products
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
- B23K26/1462—Nozzles; Features related to nozzles
- B23K26/1464—Supply to, or discharge from, nozzles of media, e.g. gas, powder, wire
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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Abstract
【解決手段】レーザ処理システム100は、レーザ処理システムのエネルギー源と熱処理すべき基板との間に配置されたシールド106を含む。シールドは、シールド内の空洞に隣接して配置された光学的に透明な窓114を含む。光学的に透明な窓により、アニールエネルギーはこの窓を通過して、基板112に照射することが可能になる。シールドはまた、シールド内の空洞へのパージガスの導入及び空洞からのパージガスの除去のために、1つまたは複数のガス入口及び1つまたは複数のガス出口を含む。パージガスを利用して、熱処理中に揮発または溶発した成分を除去し、酸素を含まないガスなどの所定の組成のガスを熱処理された領域に提供する。
【選択図】図1
Description
Claims (15)
- レーザ処理システム内の汚染を低減させる装置であって、
空洞を画定する本体を備え、前記本体が、
第1の直径を有する第1の端部、および前記第1の直径より小さい第2の直径を有する第2の端部を有する円錐形部分と、
前記円錐形部分の前記第2の端部に接合された円筒形部分と、
前記円錐形部分の前記第1の端部の周りに円周方向に形成された第1のガス入口ポートと、
前記本体の前記円筒形部分の周りに円周方向に形成された第2のガス入口ポートと、
前記円錐形部分の前記第1の端部に配置された透明な窓とを有する、装置。 - 前記第1および第2のガス入口ポートが、前記空洞と流体的に連通している、請求項1に記載の装置。
- 前記第1のガス入口ポートと流体的に連通している第1のガスチャネルと、前記第2のガス入口ポートと流体的に連通している第2のガスチャネルとをさらに備える、請求項2に記載の装置。
- 前記空洞と流体的に連通しているガス出口ポートをさらに備える、請求項3に記載の装置。
- 前記ガスポートが、前記第1のガス入口ポートと前記第2のガス入口ポートとの間に位置決めされる、請求項4に記載の装置。
- 前記円筒形部分の外面上に配置されたフランジをさらに備える、請求項1に記載の装置。
- 前記フランジが、締め具を収容するように前記フランジを通って配置された開口を含む、請求項6に記載の装置。
- 前記窓が、石英、溶融石英、またはサファイアを含む、請求項1に記載の装置。
- 前記本体が、ステンレス鋼またはアルミニウムを含む、請求項1に記載の装置。
- 前記透明な窓がその上にコーティングを含み、前記コーティングが、第1の波長を有する放射の反射を防止し、第2の波長を有する放射を反射する、請求項1に記載の装置。
- 前記第1の波長が、約200ナノメートル〜約11ナノメートルの範囲内であり、前記第2の波長が、約800ナノメートル〜約2.2ミクロンの範囲内である、請求項10に記載の装置。
- 前記本体が、高温測定の視野を作るために、前記本体の壁を通る開口を含む、請求項11に記載の装置。
- 前記本体の内面がその上にコーティングを含み、前記コーティングが、金、銀、およびアルミニウムからなる群から選択され、
前記第2のガス入口ポートが、熱処理すべき基板の領域へ酸素を含まないガスを提供するように適合される、
請求項12に記載の装置。 - レーザ処理システム内の汚染を低減させる装置であって、
空洞を画定する本体を備え、前記本体が、
第1の直径を有する第1の端部、および前記第1の直径より小さい第2の直径を有する第2の端部を有する円錐形部分と、
前記円錐形部分の前記第2の端部に接合された円筒形部分と、
前記円錐形部分の前記第1の端部の周りに円周方向に形成され、前記空洞と流体的に連通している第1のガス入口ポートと、
前記本体の前記円筒形部分の周りに円周方向に形成され、前記空洞と流体的に連通している第2のガス入口ポートと、
前記円錐形部分の前記第1の端部に配置された透明な窓であって、前記透明な窓がその上にコーティングを有し、前記コーティングが、第1の波長を有する放射の反射を防止し、第2の波長を有する放射を反射する、透明な窓とを有する、装置。 - 前記第1の波長が、約200ナノメートル〜約11ナノメートルの範囲内であり、
前記第2の波長が、約800ナノメートル〜約2.2ミクロンの範囲内であり、
前記本体の内面が、金、銀、およびアルミニウムからなる群から選択されるコーティングを含み、
前記本体が、高温測定の視野を作るために、前記本体の壁を通る開口を含み、
前記本体が、ステンレス鋼またはアルミニウムを含み、
前記窓が、石英、溶融石英、またはサファイアを含む、
請求項14に記載の装置。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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US201161543763P | 2011-10-05 | 2011-10-05 | |
US61/543,763 | 2011-10-05 | ||
US201261599336P | 2012-02-15 | 2012-02-15 | |
US61/599,336 | 2012-02-15 |
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JP2014534584A Division JP6072046B2 (ja) | 2011-10-05 | 2012-09-14 | レーザ処理システム内の粒子制御 |
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JP2017085145A true JP2017085145A (ja) | 2017-05-18 |
JP6382290B2 JP6382290B2 (ja) | 2018-08-29 |
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JP2014534584A Expired - Fee Related JP6072046B2 (ja) | 2011-10-05 | 2012-09-14 | レーザ処理システム内の粒子制御 |
JP2016255927A Expired - Fee Related JP6382290B2 (ja) | 2011-10-05 | 2016-12-28 | レーザ処理システム内の粒子制御 |
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US (1) | US9579750B2 (ja) |
JP (2) | JP6072046B2 (ja) |
KR (2) | KR101813662B1 (ja) |
CN (1) | CN103797565B (ja) |
TW (1) | TWI584355B (ja) |
WO (1) | WO2013052262A1 (ja) |
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DE102013214925A1 (de) * | 2013-07-30 | 2015-02-05 | Bayerische Motoren Werke Aktiengesellschaft | Einhausung für einen Strahlengang, Bearbeitungskammer und Verfahren zur Laserbearbeitung |
CN103915318A (zh) * | 2014-03-17 | 2014-07-09 | 京东方科技集团股份有限公司 | 激光退火设备、多晶硅薄膜及其制作方法 |
CN203950784U (zh) * | 2014-05-29 | 2014-11-19 | 京东方科技集团股份有限公司 | 一种激光退火设备 |
JP6750258B2 (ja) * | 2015-03-18 | 2020-09-02 | 株式会社リコー | 保護囲い、レーザ照射システム |
KR102416569B1 (ko) | 2015-08-27 | 2022-07-04 | 삼성디스플레이 주식회사 | 레이저 결정화 장치 |
KR101856653B1 (ko) * | 2016-10-17 | 2018-06-20 | 주식회사 이오테크닉스 | 기압을 이용한 마스크 고정모듈 |
KR102176234B1 (ko) * | 2017-09-07 | 2020-11-09 | 주식회사 엘지화학 | 나노 입자 생산 반응기 |
KR101882232B1 (ko) * | 2017-12-06 | 2018-07-26 | 주식회사 제이스텍 | 레이져와 에어흡입공 겸용 레이져가공 스캐너 헤드 |
KR102376434B1 (ko) * | 2018-01-17 | 2022-03-22 | 삼성디스플레이 주식회사 | 레이저 장치 |
JP7177619B2 (ja) * | 2018-08-01 | 2022-11-24 | 株式会社Screenホールディングス | 熱処理装置 |
US11724336B2 (en) | 2019-02-06 | 2023-08-15 | Honeywell Federal Manufacturings Technologies, Llc | Apparatus for a laser welding system |
US11352698B2 (en) * | 2019-04-25 | 2022-06-07 | Samsung Electronics Co., Ltd. | Atomic layer deposition apparatus and methods of fabricating semiconductor devices using the same |
DE102019214742A1 (de) | 2019-09-26 | 2021-04-01 | Carl Zeiss Microscopy Gmbh | Baugruppe einer Laser-Ablationsvorrichtung sowie Laser-Ablationsvorrichtung einer derartigen Baugruppe |
WO2022168551A1 (ja) * | 2021-02-04 | 2022-08-11 | 住友重機械工業株式会社 | レーザ光導入装置 |
US20220305584A1 (en) * | 2021-03-24 | 2022-09-29 | Fei Company | In-situ laser redeposition reduction by a controlled gas flow and a system for reducing contamination |
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JP2014535164A (ja) | 2014-12-25 |
US20130087547A1 (en) | 2013-04-11 |
WO2013052262A1 (en) | 2013-04-11 |
KR101986277B1 (ko) | 2019-06-05 |
JP6072046B2 (ja) | 2017-02-01 |
JP6382290B2 (ja) | 2018-08-29 |
CN103797565B (zh) | 2017-05-17 |
CN103797565A (zh) | 2014-05-14 |
TWI584355B (zh) | 2017-05-21 |
KR20140072107A (ko) | 2014-06-12 |
KR20170070257A (ko) | 2017-06-21 |
KR101813662B1 (ko) | 2017-12-29 |
TW201320158A (zh) | 2013-05-16 |
US9579750B2 (en) | 2017-02-28 |
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