JP2017073562A - 半導体デバイスを支持基板に接合する方法 - Google Patents
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Abstract
Description
[(CTEgrowth−CTEstresscomp)(Tbond1−Troom )(Estresscomp)]/[(1−νstresscomp)(tstresscomp)]=[(CTEgrowth−CTEsupport)(Tbond2−Troom )(Esupport)]/[(1−νsupport)(tsupport)]であり、式中、CTEgrowthは、成長基板のCTE(サファイアでは約5.8ppm/℃)であり、CTEstresscompは、ストレス補償ウエハのCTE(Siでは約2.6ppm/℃)であり、CTEsupportは、支持基板ウエハのCTEであり、Troomは、室温、しばしば25℃であり、Tbond1は、デバイスウエハとストレス補償ウエハとの間のボンドの温度であり、Tbond2は、デバイスウエハと支持基板ウエハとの間のボンドの温度であり、Estresscompは、ストレス補償ウエハのヤング率であり、Esupportは、支持基板ウエハのヤング率であり、νstresscompは、ストレス補償ウエハのポアソン比であり、νsupportは、支持基板ウエハのポアソン比であり、tstresscompは、ストレス補償ウエハの厚さであり、tsupportは、支持基板ウエハの厚さである。スタックが、冷却中に平坦なままであるように、デバイスウエハ、支持基板ウエハ、及びストレス補償ウエハを含む接合されたスタックが、平衡を保たれたストレスを有するために、式(1)の両辺は、等しくなければならない。幾つかの実施形態において、小量のストレスが、接合されたスタックにおいて許容され得る。例えば、式1の両辺は、幾つかの実施形態において10%以下、幾つかの実施形態において5%以下、また幾つかの実施形態において1%以下異なっても良い。
Claims (18)
- 成長基板と、
前記成長基板上に成長された半導体構造であり、n型領域とp型領域との間に配置された発光層を有する半導体構造と、
前記n型領域と直接接触したnコンタクト、及び前記p型領域と直接接触したpコンタクトと
を有し、
前記nコンタクトは、前記n型領域のエッジを越えて延在して前記成長基板と直接接触している、
デバイス。 - 当該デバイスは更に、当該デバイスのエッジに配置されたポリマー層を有し、前記ポリマー層は、前記nコンタクト及び前記成長基板と直接接触している、請求項1に記載のデバイス。
- 前記nコンタクトは前記pコンタクトを囲んでいる、請求項1に記載のデバイス。
- ボンディング層を介して前記nコンタクト及び前記pコンタクトに接合されたボディと、
前記ボディ及び前記ボンディング層を貫いて形成された少なくとも1つのスルーホールであり、金属で充填されたスルーホールと、
を更に有する請求項1に記載のデバイス。 - 成長基板と、
前記成長基板上に成長された半導体構造であり、n型領域とp型領域との間に配置された発光層を有する半導体構造と、
前記n型領域と直接接触したnコンタクト、及び前記p型領域と直接接触したpコンタクトであり、当該nコンタクトが、前記n型領域のエッジから後退されている、nコンタクト及びpコンタクトと、
前記成長基板及び前記nコンタクトと直接接触して前記n型領域のエッジに配置された反射誘電体材料と、
を有するデバイス。 - 当該デバイスは更に、当該デバイスのエッジに配置されたポリマー層を有し、前記ポリマー層は、前記nコンタクト、前記反射誘電体材料及び前記成長基板と直接接触している、請求項5に記載のデバイス。
- 前記nコンタクトは前記pコンタクトを囲んでいる、請求項5に記載のデバイス。
- ボンディング層を介して前記nコンタクト及び前記pコンタクトに接合されたボディと、
前記ボディ及び前記ボンディング層を貫いて形成された少なくとも1つのスルーホールであり、金属で充填されたスルーホールと、
を更に有する請求項5に記載のデバイス。 - 成長基板上に成長された半導体デバイスのウエハを提供することであって、各半導体デバイスが、n型領域と、p型領域と、前記n型領域と直接接触したnコンタクトと、前記p型領域と直接接触したpコンタクトとを有し、前記半導体デバイスのウエハが、前記nコンタクト及び前記pコンタクトの表面である第1の表面、及び前記第1の表面と反対側の第2の表面を有し、前記第2の表面が、前記成長基板の表面であることと、
前記第1の表面を第1のウエハに接合することであって、前記第1のウエハが本体を含むことと、
前記第2の表面を第2のウエハに接合することであって、前記第1及び第2のウエハが、それぞれ、前記成長基板と異なる熱膨張係数を有することと、
前記第1の表面を前記第1のウエハに接合した後で、各半導体デバイスについて、前記nコンタクトを露出させるように、前記本体の全厚さを通して第1のビアをエッチングし、且つ前記pコンタクトを露出させるように、前記本体の全厚さを通して第2のビアをエッチングすることと、
前記第1及び第2のビアをエッチングした後で、前記第2のウエハを除去することと、
を含む方法。 - 前記nコンタクトが、前記n型領域のエッジを越えて延在して前記成長基板と直接接触する、請求項9に記載の方法。
- 前記nコンタクトが、前記n型領域のエッジから後退され、各半導体デバイスが更に、前記成長基板及び前記nコンタクトと直接接触して前記n型領域のエッジに配置された反射誘電体材料を有する、請求項9に記載の方法。
- 前記成長基板が、サファイアであり、前記第1及び第2のウエハが、シリコンである、請求項9に記載の方法。
- 前記第1の表面を第1のウエハに接合すること及び前記第2の表面を第2のウエハに接合することが、単一のボンディングステップで行われる、請求項9に記載の方法。
- 前記第1の表面を第1のウエハに接合することが、前記第2の表面を第2のウエハに接合することの前に行われる、請求項9に記載の方法。
- 前記第1の表面を第1のウエハに接合することが、前記第2の表面を第2のウエハに接合することの後に行われる、請求項9に記載の方法。
- 第1のボンディング層が、前記第1の表面と前記第1のウエハとの間に配置され、第2のボンディング層が、前記第2の表面と前記第2のウエハとの間に配置される、請求項9に記載の方法。
- 前記第1のボンディング層が、前記第2のボンディング層より高い温度で接合される、請求項16に記載の方法。
- 前記第1のウエハが、シリコンであり、第1のボンディング材料によって前記第1の表面に接合され、
前記第2のウエハが、シリコンであり、第2のボンディング材料によって前記第2の表面に接合され、
前記第2のウエハが、前記第1のウエハより厚い、請求項9に記載の方法。
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