JP2017055037A - 半導体発光装置およびその製造方法 - Google Patents
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Abstract
【解決手段】実施形態によれば、半導体発光装置は、第1の半導体層と、第2の半導体層と、発光層と、第1面と、第2面と、を有する半導体層と、p側電極と、n側電極と、前記半導体層の側面の外側に設けられた第1絶縁層と、光学層と、前記第1絶縁層の側面の外側および前記光学層の側面の外側に設けられた第2絶縁層と、前記第2絶縁層上および前記光学層上に設けられ、前記光学層の上面、側面および角部と接し、光透過性を有する第1層と、p側ピラーと、n側ピラーと、p側配線と、n側配線と、を備える。前記第1層は、前記光学層の前記側面および前記第2絶縁層の上面と接する第1下端部と、前記第2絶縁層の前記上面と接し、前記光学層と離間し、前記光学層の前記角部の高さと、前記第1下端部の高さと、の間の高さに設けられた第2下端部と、を有する。
【選択図】図1
Description
図2(a)は、実施形態の半導体発光装置におけるp側電極16と、n側電極17との平面レイアウトの一例を示す模式平面図である。図1は、図2(a)におけるA−A’断面に対応する。図2(a)は、図1における各配線部41、43、樹脂層25、絶縁膜18、および反射膜51を取り除いて半導体層15の第2面15bから見た図に対応する。
図3(a)に示すように、例えば、MOCVD(metal organic chemical vapor deposition)法により、基板10の主面側に、第1の半導体層11、発光層13および第2の半導体層12が順にエピタキシャル成長される。
樹脂層25は、p側配線部41およびn側配線部43を覆う。また、樹脂層25は、反射膜51を覆う。
他の実施形態において、上述した実施形態との主な差異は、配線周辺の構成である。そのため、上述した実施形態と同様の部分に関しては、説明を一部省略する。
Claims (10)
- 第1の半導体層と、第2の半導体層と、前記第1の半導体層と前記第2の半導体層との間に設けられた発光層と、第1面と、前記第1面に対向する第2面と、を有する半導体層と、
前記第2の半導体層と接するp側電極と、
前記第1の半導体層と接するn側電極と、
前記第2面側に設けられ、前記p側電極と接するp側ピラーと、
前記第2面側に設けられ、前記n側電極と接するn側ピラーと、
前記半導体層の側面の外側に設けられた第1絶縁層と、
前記第1の半導体層の前記第1面上および前記第1絶縁層上に設けられた光学層と、
前記第1絶縁層の側面の外側および前記光学層の側面の外側に設けられた第2絶縁層と、
前記第2絶縁層上および前記光学層上に設けられ、前記光学層の上面、側面および角部と接し、光透過性を有する第1層であって、
前記光学層の前記側面および前記第2絶縁層の上面と接する第1下端部と、
前記第2絶縁層の前記上面と接し、前記光学層と離間し、前記光学層の前記角部の高さよりも低く、前記第1下端部の高さ以上の高さに設けられた第2下端部と、
を有する第1層と、
前記p側ピラーに接し、前記第1絶縁層および前記第2絶縁層と重なる領域に延びるp側配線と、
前記n側ピラーに接し、前記第1絶縁層および前記第2絶縁層と重なる領域に延び、前記p側配線と離間するn側配線と、
を備えた半導体発光装置。 - 前記第2下端部から前記第1層の上面までの間の距離は、前記光学層の前記上面から前記第1層の前記上面までの間の距離よりも大きい請求項1記載の半導体発光装置。
- 前記第1層は、前記光学層の前記側面に対して傾斜する傾斜部を有し、
前記傾斜部は、前記第1下端部から前記第2下端部まで連続して設けられた請求項1または2に記載の半導体発光装置。 - 前記第1層の前記傾斜部は、曲面を有する請求項3記載の半導体発光装置。
- 前記第1層上に設けられ、光透過性を有する第2層をさらに備えた請求項1〜4のいずれか1つに記載の半導体発光装置。
- 第1の半導体層と、第2の半導体層と、前記第1の半導体層と前記第2の半導体層との間に設けられた発光層と、第1面と、前記第1面に対向する第2面と、を有する半導体層と、
前記第2の半導体層と接するp側電極と、
前記第1の半導体層と接するn側電極と、
前記第2面側に設けられ、前記p側電極と接するp側ピラーと、
前記第2面側に設けられ、前記n側電極と接するn側ピラーと、
前記半導体層の側面の外側に設けられた第1絶縁層と、
前記半導体層の前記第1面上および前記第1絶縁層上に設けられた光学層と、
前記第1絶縁層の側面の外側および前記光学層の側面の外側に設けられた第2絶縁層であって、前記光学層の上面の高さよりも前記半導体層に近い高さに設けられ、一部が前記光学層の前記側面に対して傾斜し、前記光学層の前記側面から離れるにつれて前記光学層の上面の高さに近づく上面を有する第2絶縁層と、
前記p側ピラーに接し、前記第1絶縁層および前記第2絶縁層と重なる領域に延びるp側配線と、
前記n側ピラーに接し、前記第1絶縁層および前記第2絶縁層と重なる領域に延び、前記p側配線と離間するn側配線と、
を備えた半導体発光装置。 - 前記第2絶縁層の前記上面の傾斜は、曲面を有する請求項6記載の半導体発光装置。
- 前記第2絶縁層上および前記光学層上に設けられ、前記光学層の上面、側面および角部と接し、光透過性を有する第1層をさらに備えた請求項6または7に記載の半導体発光装置。
- 前記第1層上に設けられ、光透過性を有する第2層をさらに備えた請求項8記載の半導体発光装置。
- 第1の半導体層と、第2の半導体層と、前記第1の半導体層と前記第2の半導体層との間に設けられた発光層と、を有する半導体層を形成する工程と、
前記半導体層と接するp側電極およびn側電極を形成する工程と、
前記p側電極と電気的に接続するp側ピラーを形成する工程と、
前記n側電極と電気的に接続し、前記第1絶縁層を介して前記p側ピラーと離間するn側ピラーを形成する工程と、
前記p側電極の側面、前記n側電極の側面および前記半導体層の側面に第1絶縁層を形成する工程と、
前記半導体層上および前記第1絶縁層上に光学層を形成する工程と、
光透過性を有する第1層に前記光学層の表面を貼り合わせ、前記光学層の側面に対して傾斜し、前記光学層の側面に接する傾斜部を前記第1層の表面に形成する工程と、
前記第1絶縁層の側面、前記光学層の前記側面および前記傾斜部と接する第2絶縁層を形成する工程と、
前記p側ピラーと電気的に接続し、前記第1絶縁層、前記第2絶縁層および前記p側ピラーと重なるp側配線を一体に形成する工程と、
前記n側ピラーと電気的に接続し、前記第1絶縁層、前記第2絶縁層および前記n側ピラーと重なるn側配線を一体に形成する工程と、
を備えた半導体発光装置の製造方法。
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US11398592B2 (en) | 2019-09-25 | 2022-07-26 | Nichia Corporation | Method for manufacturing light emitting module and light emitting module |
US11749777B2 (en) | 2019-04-27 | 2023-09-05 | Nichia Corporation | Method for manufacturing light-emitting module |
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JP2013201273A (ja) * | 2012-03-23 | 2013-10-03 | Toshiba Corp | 半導体発光素子及びその製造方法 |
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Cited By (4)
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---|---|---|---|---|
US11749777B2 (en) | 2019-04-27 | 2023-09-05 | Nichia Corporation | Method for manufacturing light-emitting module |
US11398592B2 (en) | 2019-09-25 | 2022-07-26 | Nichia Corporation | Method for manufacturing light emitting module and light emitting module |
WO2021229063A1 (de) * | 2020-05-15 | 2021-11-18 | Osram Opto Semiconductors Gmbh | Bauelement und verfahren zur herstellung eines bauelements |
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