JP2017041547A - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JP2017041547A JP2017041547A JP2015162718A JP2015162718A JP2017041547A JP 2017041547 A JP2017041547 A JP 2017041547A JP 2015162718 A JP2015162718 A JP 2015162718A JP 2015162718 A JP2015162718 A JP 2015162718A JP 2017041547 A JP2017041547 A JP 2017041547A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 184
- 238000004519 manufacturing process Methods 0.000 title claims description 48
- 239000000758 substrate Substances 0.000 claims abstract description 69
- 125000006850 spacer group Chemical group 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
- 230000000149 penetrating effect Effects 0.000 claims 4
- 239000011229 interlayer Substances 0.000 abstract description 31
- 238000009413 insulation Methods 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 48
- 210000004027 cell Anatomy 0.000 description 39
- 210000000746 body region Anatomy 0.000 description 32
- 238000005468 ion implantation Methods 0.000 description 30
- 239000012535 impurity Substances 0.000 description 28
- 230000004888 barrier function Effects 0.000 description 21
- 210000004754 hybrid cell Anatomy 0.000 description 21
- 239000007789 gas Substances 0.000 description 14
- 230000001681 protective effect Effects 0.000 description 14
- 238000004380 ashing Methods 0.000 description 11
- 238000001312 dry etching Methods 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 10
- 238000002513 implantation Methods 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 10
- 238000000206 photolithography Methods 0.000 description 10
- 230000001154 acute effect Effects 0.000 description 7
- 230000004048 modification Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- 230000002265 prevention Effects 0.000 description 7
- NGVDGCNFYWLIFO-UHFFFAOYSA-N pyridoxal 5'-phosphate Chemical compound CC1=NC=C(COP(O)(O)=O)C(C=O)=C1O NGVDGCNFYWLIFO-UHFFFAOYSA-N 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000013256 coordination polymer Substances 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000009751 slip forming Methods 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910015900 BF3 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/321—After treatment
- H01L21/3215—Doping the layers
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- H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
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- H01L29/42356—Disposition, e.g. buried gate electrode
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- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
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- H01L29/66333—Vertical insulated gate bipolar transistors
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
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Abstract
Description
以下、図面を参照しながら本実施の形態による半導体装置について詳細に説明する。本実施の形態による半導体装置は、IE型トレンチゲートIGBTである。IGBTがオン状態のときに、エミッタ電極側(表面側)へのホール(正孔)の排出が制限され、ドリフト領域に蓄積される電荷の濃度を高めることができるというIE効果を奏するため、IE型と呼ばれる。さらに、本実施の形態による半導体装置は、互いに間隔を空けて配列された3つのトレンチゲート電極のうち、中央に配置されたトレンチゲート電極(TG1)が、ゲート電極と電気的に接続され、両端に配置された2つのトレンチゲート電極(TG2、TG3)の各々が、エミッタ電極と電気的に接続されるため、EGE型(エミッタ−ゲート−エミッタ型)と呼ばれることもある。
図1は、本実施の形態による半導体装置の構成を示す断面図であり、図2および図3は、本実施の形態による半導体装置の構成を示す平面図である。図1は、例えば図3のA−A断面部に対応する。図3は、例えば図2のうち二点鎖線で囲まれた領域に対応する。図4は、本実施の形態による半導体装置(半導体チップ)の構成を示す平面図である。
本実施の形態によるIE型トレンチゲートIGBTおよび保護ダイオードの製造方法を図7〜図38を用いて説明する。図7〜図38は、本実施の形態によるIE型トレンチゲートIGBT(図3に示すA−A、B−B断面部)または保護ダイオードの製造工程を示す要部断面図である。
本実施の形態の変形例による半導体装置について図39および図40を用いて説明する。図39は、本実施の形態の変形例による半導体装置の構成を示す平面図である。図40は、本実施の形態による半導体装置の構成を示す断面図であり、例えば図39のC−C断面部に対応する。
AR2 ゲート配線引き出し領域
CE コレクタ電極
CF 導電性膜
CL p+型コレクタ領域
CP 接続電極
CT コンタクト溝
DIL ダイオード配線
EE エミッタ電極
EP エミッタパッド
FPF 絶縁膜
GE ゲート電極
GI ゲート絶縁膜
GL ゲート配線
GP ゲートパッド
HM ハードマスク膜
IF 絶縁膜
IL 層間絶縁膜
LC 単位セル領域
LCaa 幅
LCai 間隔
LCh ハイブリッドセル領域
LCh1、LCh2 ハイブリッドサブセル領域
LCi インアクティブセル領域
LCi1、LCi2 部分
ND n−型ドリフト領域
NE n+型エミッタ領域
NHB n型ホールバリア領域
NL n+型層
Ns n型フィールドストップ領域
OP1、OP2 開口部
PB p型ボディ領域
PBC、PBCp p+型ボディコンタクト領域
PD p型層
PF、PFp p型フローティング領域
PL p−型層
PLP p+型ラッチアップ防止領域
PS 真性半導体膜
PR p+型半導体領域
R1〜R3 レジスト膜
Sa 上面
Sb 下面
SLn、SLp 半導体層
SS 半導体基板
SW スペーサ
T1〜T3 トレンチ
TG1〜TG3 トレンチゲート電極
TGp 端部トレンチゲート電極
TGx エミッタ接続部
Wh、Wi 幅
Wh1、Wh2 幅(距離)
Claims (10)
- 第1主面および前記第1主面と反対側の第2主面を有する半導体基板と、
前記半導体基板の前記第2主面側に設けられた第1導電型の第1半導体領域と、
前記半導体基板の前記第1主面側に、前記第1半導体領域に接して設けられた前記第1導電型と異なる第2導電型の第2半導体領域と、
前記第2半導体領域を貫通して、前記第1半導体領域まで到達する第1溝と、
前記第2半導体領域を貫通して、前記第1半導体領域まで到達し、前記第1溝と離間して設けられた第2溝と、
前記第2半導体領域内に、前記第1溝の第1側面に接するように設けられた前記第1導電型の第3半導体領域と、
前記第1溝の内部に第1絶縁膜を介して設けられた第1トレンチゲート電極と、
前記第2溝の内部に第2絶縁膜を介して設けられた第2トレンチゲート電極と、
前記第1主面上に第3絶縁膜を介して設けられ、前記第2トレンチゲート電極と一体に形成された接続部と、
前記接続部の側壁に第4絶縁膜を介して設けられたスペーサと、
前記接続部および前記スペーサを覆うように、前記第1主面上に設けられた第5絶縁膜と、
前記第5絶縁膜を貫通し、前記第3半導体領域と接する第1開口部と、
前記第5絶縁膜を貫通し、前記接続部と接する第2開口部と、
前記第1開口部を介して前記第3半導体領域と電気的に接続し、前記第2開口部を介して前記接続部と電気的に接続する第1電極と、
を有する、半導体装置。 - 請求項1記載の半導体装置において、
前記接続部は、前記第2溝上に形成され、前記第1溝上には形成されない、半導体装置。 - 請求項1記載の半導体装置において、
前記接続部の厚さは、0.5μm〜1.5μmである、半導体装置。 - 請求項1記載の半導体装置において、
前記スペーサは、多結晶シリコンからなる、半導体装置。 - 請求項1記載の半導体装置において、
前記第1主面の上方に設けられ、前記第1トレンチゲート電極と電気的に接続する第2電極、
をさらに有する、半導体装置。 - (a)半導体基板の第1主面から第1深さを有する第1溝および第2溝を、互いに離間して形成する工程、
(b)前記第1溝および前記第2溝のそれぞれの内部を含む前記半導体基板の前記第1主面上に、第1絶縁膜を介して第1導電性膜を形成する工程、
(c)前記第1導電性膜を加工して、前記第1溝の内部に前記第1絶縁膜を介して第1トレンチゲート電極を形成し、前記第2溝の内部に前記第1絶縁膜を介して第2トレンチゲート電極を形成し、前記第1主面上に前記第1絶縁膜を介して前記第2トレンチゲート電極と一体に接続部を形成する工程、
(d)前記半導体基板の前記第1主面から前記第1深さよりも浅い第2深さを有する第1導電型の第1半導体領域を形成する工程、
(e)前記第1半導体領域内に、前記第1溝の第1側面に接する前記第1導電型と異なる第2導電型の第2半導体領域を形成する工程、
(f)前記第1主面上に、前記接続部を覆うように第2絶縁膜を介して第2導電性膜を形成する工程、
(g)前記第2導電性膜を加工して、前記接続部の側壁に前記第2絶縁膜を介してスペーサを形成する工程、
(h)前記第1主面上に、前記接続部および前記スペーサを覆うように第3絶縁膜を形成する工程、
(i)前記第3絶縁膜を貫通し、前記第2半導体領域と接する第1開口部および前記接続部と接する第2開口部を形成する工程、
(j)前記第1開口部および前記第2開口部のそれぞれの内部を含む前記第1主面上に、第3導電性膜を形成する工程、
(k)前記第3導電性膜を加工して、前記第1開口部を介して前記第2半導体領域と電気的に接続し、前記第2開口部を介して前記接続部と電気的に接続する第1電極を形成する工程、
を含む、半導体装置の製造方法。 - 請求項6記載の半導体装置の製造方法において、
前記接続部は、前記第2溝上に形成され、前記第1溝上には形成されない、半導体装置の製造方法。 - 請求項6記載の半導体装置の製造方法において、
前記接続部の厚さは、0.5μm〜1.5μmである、半導体装置の製造方法。 - 請求項6記載の半導体装置の製造方法において、
前記第2導電性膜は、多結晶シリコンからなる、半導体装置の製造方法。 - 請求項6記載の半導体装置の製造方法において、
前記(k)工程では、さらに、
前記第1トレンチゲート電極と電気的に接続する第2電極を形成する工程、
を含む、半導体装置の製造方法。
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