JP2016527719A - 金属酸化物半導体層の電気伝導性を改善する方法 - Google Patents
金属酸化物半導体層の電気伝導性を改善する方法 Download PDFInfo
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- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 136
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 136
- 239000004065 semiconductor Substances 0.000 title claims abstract description 96
- 238000000034 method Methods 0.000 title claims abstract description 82
- 239000010409 thin film Substances 0.000 claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 claims abstract description 17
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 230000001965 increasing effect Effects 0.000 claims abstract description 13
- 238000000151 deposition Methods 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 14
- 238000006722 reduction reaction Methods 0.000 claims description 13
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 11
- 238000006243 chemical reaction Methods 0.000 claims description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 6
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 claims description 6
- 239000004417 polycarbonate Substances 0.000 claims description 6
- 239000011112 polyethylene naphthalate Substances 0.000 claims description 6
- -1 polyethylene terephthalate Polymers 0.000 claims description 6
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 6
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 6
- 230000009467 reduction Effects 0.000 claims description 6
- 239000011787 zinc oxide Substances 0.000 claims description 5
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052783 alkali metal Inorganic materials 0.000 claims description 3
- 150000001340 alkali metals Chemical class 0.000 claims description 3
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 3
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 3
- 239000006227 byproduct Substances 0.000 claims description 3
- 239000003638 chemical reducing agent Substances 0.000 claims description 3
- 230000001939 inductive effect Effects 0.000 claims description 3
- 239000012212 insulator Substances 0.000 claims description 3
- 229920000515 polycarbonate Polymers 0.000 claims description 3
- 238000011049 filling Methods 0.000 claims description 2
- 239000003153 chemical reaction reagent Substances 0.000 claims 1
- 229960001296 zinc oxide Drugs 0.000 claims 1
- 239000002243 precursor Substances 0.000 description 15
- 230000008901 benefit Effects 0.000 description 14
- 239000008186 active pharmaceutical agent Substances 0.000 description 12
- 239000010408 film Substances 0.000 description 7
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- 238000000137 annealing Methods 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 238000009832 plasma treatment Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229920001621 AMOLED Polymers 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- 239000004695 Polyether sulfone Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910007717 ZnSnO Inorganic materials 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 2
- 229910052792 caesium Inorganic materials 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 235000006408 oxalic acid Nutrition 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229920006393 polyether sulfone Polymers 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 229910052701 rubidium Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 2
- MCULRUJILOGHCJ-UHFFFAOYSA-N triisobutylaluminium Chemical compound CC(C)C[Al](CC(C)C)CC(C)C MCULRUJILOGHCJ-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000005300 metallic glass Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- RSCASNFKRQQQDK-UHFFFAOYSA-N tritert-butylgallane Chemical compound CC(C)(C)[Ga](C(C)(C)C)C(C)(C)C RSCASNFKRQQQDK-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
Abstract
Description
本開示はさらに、薄膜トランジスタ系の金属酸化物半導体を製造するための方法に関する。
Claims (12)
- 予め定めた場所において金属酸化物半導体層の電気伝導性を改善するための方法であって、
基板(10)上に金属酸化物半導体層(12)を設けることと、
原子層堆積法を用いて、金属酸化物半導体層の上に金属酸化物層(15)を設けることとを含み、
金属酸化物層は、予め定めた場所において金属酸化物半導体層と物理的接触している、方法。 - 金属酸化物層(15)は、10nm〜100nmの範囲の厚さを有する請求項1記載の方法。
- 金属酸化物層(15)を設けること、150℃〜200℃の範囲の温度で行われる請求項1または2記載の方法。
- 金属酸化物半導体層(12)は、ガリウム−インジウム−亜鉛−酸化物層である請求項1〜3のいずれかに記載の方法。
- 金属酸化物層(15)は、Al2O3層である請求項1〜4のいずれかに記載の方法。
- Al2O3層は、試薬としてトリメチルアルミニウムおよび水(H2O)から堆積される請求項5記載の方法。
- 金属酸化物層を金属酸化物半導体層の上に設ける前に、
アルカリ金属またはアルカリ土類金属を含む還元層を、予め定めた場所において金属酸化物半導体層と物理的接触して設けることと、
還元層と金属酸化物半導体層との間の化学還元反応を誘導することと、
還元反応から還元層および反応副産物を除去することとをさらに含む請求項1〜6のいずれかに記載の方法。 - 請求項1〜7のいずれかに記載の方法を利用して、自己整合上部ゲート金属酸化物半導体薄膜トランジスタを製造するための方法であって、
金属酸化物半導体層(12)を基板(10)上に設けることと、
ゲート誘電体層(13)を金属酸化物半導体層(12)の上に堆積することと、
ゲート電極層(14)をゲート誘電体層(13)の上に堆積することと、
ゲート電極層(14)およびゲート絶縁層(13)をパターン化して、ゲート電極(141)およびゲート絶縁体(131)を形成することと、
金属酸化物半導体層(12)をパターン化し、これにより薄膜トランジスタのソース領域(111)、チャネル領域(110)およびドレイン領域(112)を規定することと、
原子層堆積法を用いて、金属酸化物層(15)を堆積することとを含み、これにより、金属酸化物層が金属酸化物半導体層と直接に物理的接触しているソース領域(111)およびドレイン領域(112)において、金属酸化物半導体層の電気伝導性を増加させる。 - 誘電体層(16)を金属酸化物層の上に設けることと、
誘電体層(16)および金属酸化物層(15)を通過するビアを形成することと、
ビアを金属で充填し、ソース電極(21)およびドレイン電極(22)を形成することとをさらに含む請求項8記載の方法。 - 方法は、200℃より低い温度で実施される請求項8または9記載の方法。
- 基板は、低コストの可撓性基板である請求項8〜10いずれかに記載の方法。
- 基板は、PET(ポリエチレンテレフタレート)、PEN(ポリエチレンナフタレート)、またはPC(ポリカーボネート)を含む請求項8〜11のいずれかに記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP13177735.1 | 2013-07-24 | ||
EP13177735 | 2013-07-24 | ||
PCT/EP2014/062120 WO2015010825A1 (en) | 2013-07-24 | 2014-06-11 | Method for improving the electrical conductivity of metal oxide semiconductor layers |
Publications (3)
Publication Number | Publication Date |
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JP2016527719A true JP2016527719A (ja) | 2016-09-08 |
JP2016527719A5 JP2016527719A5 (ja) | 2017-04-20 |
JP6426177B2 JP6426177B2 (ja) | 2018-11-21 |
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JP2016528381A Expired - Fee Related JP6426177B2 (ja) | 2013-07-24 | 2014-06-11 | 金属酸化物半導体薄膜トランジスタの製造方法 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP6426177B2 (ja) |
KR (1) | KR20160034262A (ja) |
CN (1) | CN105409003B (ja) |
TW (1) | TWI660432B (ja) |
WO (1) | WO2015010825A1 (ja) |
Cited By (1)
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WO2021161635A1 (ja) * | 2020-02-12 | 2021-08-19 | 株式会社ジャパンディスプレイ | 半導体装置及びその製造方法 |
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TWI613706B (zh) * | 2015-07-03 | 2018-02-01 | 友達光電股份有限公司 | 氧化物半導體薄膜電晶體及其製作方法 |
EP3136446A1 (en) | 2015-08-28 | 2017-03-01 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO | Tft device and manufacturing method |
US20200035717A1 (en) * | 2018-07-26 | 2020-01-30 | Sharp Kabushiki Kaisha | Thin film transistor substrate and method of producing thin film transistor substrate |
KR20230061713A (ko) | 2021-10-29 | 2023-05-09 | (주) 예스티 | 금속 산화물을 위한 고압 열처리 방법 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080277658A1 (en) * | 2007-05-11 | 2008-11-13 | Hun-Jung Lee | Thin film transistor, method of manufacturing the same, organic light emitting display apparatus comprising the thin film transistor, and method of manufacturing the same |
US20090230389A1 (en) * | 2008-03-17 | 2009-09-17 | Zhizhang Chen | Atomic Layer Deposition of Gate Dielectric Layer with High Dielectric Constant for Thin Film Transisitor |
JP2010016163A (ja) * | 2008-07-03 | 2010-01-21 | Sony Corp | 薄膜トランジスタおよび表示装置 |
JP2011216603A (ja) * | 2010-03-31 | 2011-10-27 | Toppan Printing Co Ltd | 薄膜トランジスタ及びその製造方法 |
JP2011228622A (ja) * | 2010-03-30 | 2011-11-10 | Sony Corp | 薄膜トランジスタおよびその製造方法、並びに表示装置 |
JP2013048217A (ja) * | 2011-07-22 | 2013-03-07 | Semiconductor Energy Lab Co Ltd | 酸化物半導体膜の処理方法および半導体装置の作製方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012015436A (ja) * | 2010-07-05 | 2012-01-19 | Sony Corp | 薄膜トランジスタおよび表示装置 |
CN103299430A (zh) * | 2010-12-30 | 2013-09-11 | 周星工程股份有限公司 | 薄膜晶体管及其制造方法 |
CN102969362B (zh) * | 2011-09-01 | 2016-03-30 | 中国科学院微电子研究所 | 高稳定性非晶态金属氧化物tft器件 |
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2014
- 2014-06-11 KR KR1020157037203A patent/KR20160034262A/ko active IP Right Grant
- 2014-06-11 WO PCT/EP2014/062120 patent/WO2015010825A1/en active Application Filing
- 2014-06-11 JP JP2016528381A patent/JP6426177B2/ja not_active Expired - Fee Related
- 2014-06-11 CN CN201480041709.4A patent/CN105409003B/zh not_active Expired - Fee Related
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080277658A1 (en) * | 2007-05-11 | 2008-11-13 | Hun-Jung Lee | Thin film transistor, method of manufacturing the same, organic light emitting display apparatus comprising the thin film transistor, and method of manufacturing the same |
US20090230389A1 (en) * | 2008-03-17 | 2009-09-17 | Zhizhang Chen | Atomic Layer Deposition of Gate Dielectric Layer with High Dielectric Constant for Thin Film Transisitor |
JP2010016163A (ja) * | 2008-07-03 | 2010-01-21 | Sony Corp | 薄膜トランジスタおよび表示装置 |
JP2011228622A (ja) * | 2010-03-30 | 2011-11-10 | Sony Corp | 薄膜トランジスタおよびその製造方法、並びに表示装置 |
JP2011216603A (ja) * | 2010-03-31 | 2011-10-27 | Toppan Printing Co Ltd | 薄膜トランジスタ及びその製造方法 |
JP2013048217A (ja) * | 2011-07-22 | 2013-03-07 | Semiconductor Energy Lab Co Ltd | 酸化物半導体膜の処理方法および半導体装置の作製方法 |
Cited By (2)
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JP2021128978A (ja) * | 2020-02-12 | 2021-09-02 | 株式会社ジャパンディスプレイ | 半導体装置及びその製造方法 |
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JP6426177B2 (ja) | 2018-11-21 |
CN105409003A (zh) | 2016-03-16 |
KR20160034262A (ko) | 2016-03-29 |
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TW201508841A (zh) | 2015-03-01 |
WO2015010825A1 (en) | 2015-01-29 |
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