JP2016219780A - マイクロ発光ダイオード - Google Patents
マイクロ発光ダイオード Download PDFInfo
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- JP2016219780A JP2016219780A JP2016053936A JP2016053936A JP2016219780A JP 2016219780 A JP2016219780 A JP 2016219780A JP 2016053936 A JP2016053936 A JP 2016053936A JP 2016053936 A JP2016053936 A JP 2016053936A JP 2016219780 A JP2016219780 A JP 2016219780A
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- type semiconductor
- semiconductor layer
- emitting diode
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- micro light
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- 239000004065 semiconductor Substances 0.000 claims abstract description 375
- 238000002955 isolation Methods 0.000 claims abstract description 251
- 239000000758 substrate Substances 0.000 claims description 122
- 230000004888 barrier function Effects 0.000 claims description 7
- 230000000903 blocking effect Effects 0.000 claims description 4
- 230000006798 recombination Effects 0.000 abstract description 16
- 238000005215 recombination Methods 0.000 abstract description 16
- 239000010410 layer Substances 0.000 description 552
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 30
- 229910002601 GaN Inorganic materials 0.000 description 27
- 238000000034 method Methods 0.000 description 20
- 239000012790 adhesive layer Substances 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 14
- 238000012546 transfer Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 9
- 239000002800 charge carrier Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 239000011777 magnesium Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 5
- 238000004146 energy storage Methods 0.000 description 5
- 229910052749 magnesium Inorganic materials 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910005540 GaP Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 230000007480 spreading Effects 0.000 description 3
- 238000003892 spreading Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- -1 argon ion Chemical class 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004770 highest occupied molecular orbital Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/731—Location prior to the connecting process
- H01L2224/73101—Location prior to the connecting process on the same surface
- H01L2224/73103—Bump and layer connectors
- H01L2224/73104—Bump and layer connectors the bump connector being embedded into the layer connector
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- H01L2224/8319—Arrangement of the layer connectors prior to mounting
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- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
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Abstract
Description
110 成長基材
120 PNダイオード層
120a マイクロPNダイオード
121 バッファブロック状窒化ガリウム層
122 第1型半導体層
123 主動層
124 第2型半導体層
122a、130、130a、160 縁部隔離構造
131、161 通路
140 第1の導電層
150 第2の導電層
200 キャリア基板
210 接着層
300 受信基板
301 基材
310 接合電極
320 バッファ層
325 半導体層
330 グリッド絶縁層
340a グリッド
340b ソース
340c ドレイン
350 層間絶縁層
360 パッシベーション層
365 平坦化層
375 画素定義層
400 移送ヘッド
Cs エネルギー蓄積コンデンサ
T1 スイッチングトランジスタ
T2 駆動トランジスタ
Vdata データ線
Vdd 電源
Vselect 走査線
Vss アース
Claims (29)
- 第1型半導体層と、
前記第1型半導体層に接続される第2型半導体層と、
前記第1型半導体層に接続される第1の縁部隔離構造と、
前記第1型半導体層に電気的に結合される第1の電極と、
前記第2型半導体層に電気的に結合される第2の電極と、
を含み、
前記第1型半導体層の一縁部の前記第1の電極での垂直投影の少なくとも一部は、前記第1の電極と重なり、且つ前記第1の縁部隔離構造は、前記第1型半導体層の前記少なくとも一部に位置し、前記第1の電極と前記第2の電極との少なくとも一方は、少なくとも一部が透明であるマイクロ発光ダイオード(micro−LED)。 - 前記第1型半導体層の前記縁部の前記第1の電極での前記垂直投影は、完全に前記第1の電極と重なり、且つ前記第1の縁部隔離構造の少なくとも一部は、前記第1型半導体層の前記垂直投影に位置する請求項1に記載のマイクロ発光ダイオード。
- 前記第1型半導体層の前記縁部の前記第1の電極での前記垂直投影は、完全に前記第1の電極と重なり、且つ前記第1の縁部隔離構造は、完全に前記第1型半導体層の前記垂直投影に位置する請求項1又は2に記載のマイクロ発光ダイオード。
- 前記第1の縁部隔離構造は、誘電体層である請求項1〜3の何れか1項に記載のマイクロ発光ダイオード。
- 前記第1型半導体層と前記第2型半導体層とは第1のPN接合(p−n junction)を形成し、前記第1の縁部隔離構造と前記第1型半導体層とは第2のPN接合を形成し、且つ前記第1の電極と前記第2の電極とは、前記第1のPN接合に対して順方向バイアスとなり、前記第2のPN接合に対して逆方向バイアスとなるように配置される請求項1〜3の何れか1項に記載のマイクロ発光ダイオード。
- 前記第1型半導体層はP型半導体層であり、前記第2型半導体層と前記第1の縁部隔離構造はN型半導体層である請求項1〜3、5の何れか1項に記載のマイクロ発光ダイオード。
- 前記第1型半導体層はN型半導体層であり、前記第2型半導体層と前記第1の縁部隔離構造はP型半導体層である請求項1〜3、5の何れか1項に記載のマイクロ発光ダイオード。
- 前記第1型半導体層と前記第2型半導体層とはPN接合を形成し、前記第1の縁部隔離構造と前記第1型半導体層とはショットキー障壁(Schottky barrier)を形成する請求項1〜3の何れか1項に記載のマイクロ発光ダイオード。
- 前記第1の縁部隔離構造は、前記第1型半導体層のプラズマ処理(plasma−treated)箇所である請求項8に記載のマイクロ発光ダイオード。
- 前記第1型半導体層の抵抗率はρ1であり、前記第1の縁部隔離構造は、抵抗率がρhである高抵抗率層であり、且つρh>ρ1である請求項1〜9の何れか1項に記載のマイクロ発光ダイオード。
- 前記第1の縁部隔離構造は、電子ブロック層であり、且つ前記第1型半導体層はN型半導体層である請求項1〜3の何れか1項に記載のマイクロ発光ダイオード。
- 前記第1の縁部隔離構造は正孔ブロック層であり、且つ前記第1型半導体層はP型半導体層である請求項1〜3の何れか1項に記載のマイクロ発光ダイオード。
- 前記第1の電極と前記第2の電極との少なくとも一方は、完全に透明である請求項1〜12の何れか1項に記載のマイクロ発光ダイオード。
- 前記第1の電極は、前記第1の縁部隔離構造の少なくとも1つの通路を介して前記第1型半導体層に電気的に結合され、前記第1の縁部隔離構造の前記少なくとも1つの通路は、前記第1型半導体層と前記第1の電極との間に形成される請求項1〜13の何れか1項に記載のマイクロ発光ダイオード。
- 前記第2型半導体層に接続される第2の縁部隔離構造を更に含み、前記第2の電極は、前記第2の縁部隔離構造の少なくとも1つの通路を貫通するように延伸して前記第2型半導体層に電気的に結合され、前記第2の縁部隔離構造の前記少なくとも1つの通路は、前記第2型半導体層と前記第2の電極との間に形成される請求項1〜15の何れか1項に記載のマイクロ発光ダイオード。
- 前記第1の電極は、前記第1の縁部隔離構造の前記少なくとも1つの通路を介して前記第1型半導体層の露出部分の少なくとも一部を覆う請求項1〜16の何れか1項に記載のマイクロ発光ダイオード。
- 前記第2の電極の少なくとも一部は、前記第2型半導体層に接触する請求項1〜17の何れか1項に記載のマイクロ発光ダイオード。
- 前記第1の電極の少なくとも一部は、前記第1型半導体層に接触する請求項1〜18の何れか1項に記載のマイクロ発光ダイオード。
- 前記第1型半導体層と前記第2型半導体層との間に設けられる主動層を更に含み、前記第1の縁部隔離構造は、前記第1型半導体層の少なくとも一部と前記主動層との間に設けられる請求項1〜15の何れか1項に記載のマイクロ発光ダイオード。
- 前記第1の縁部隔離構造は、前記主動層に接触する請求項20に記載のマイクロ発光ダイオード。
- 前記第1の縁部隔離構造は、前記主動層に接触しないように、前記第1型半導体層中に設けられる請求項20に記載のマイクロ発光ダイオード。
- 前記第2型半導体層の少なくとも一部と前記主動層との間に設けられる第2の縁部隔離構造を更に含む請求項20に記載のマイクロ発光ダイオード。
- 前記第2型半導体層に接続される第2の縁部隔離構造を更に含み、前記第2の電極は、前記第2の縁部隔離構造の少なくとも1つの通路を貫通するように延伸して前記第2型半導体層に電気的に結合され、前記第2の縁部隔離構造の前記少なくとも1つの通路は、前記第2型半導体層と前記第2の電極との間に形成される請求項20〜23の何れか1項に記載のマイクロ発光ダイオード。
- 前記第1の縁部隔離構造の前記少なくとも1つの通路は、開口の形を呈する請求項1〜24の何れか1項に記載のマイクロ発光ダイオード。
- 接合電極を有する基板と、
少なくとも1つの請求項1〜25の何れか1項に記載のマイクロ発光ダイオードと、を備え、
前記第1型半導体層、前記第2型半導体層、前記第1の縁部隔離構造、前記第1の電極、前記第2の電極からなる組み合わせは、前記接合電極に接続され、前記第1型半導体層は、前記基板に隣接し、且つ前記第2型半導体層は、前記基板から離れるマイクロ発光ダイオードディスプレイ。 - 基板と、
少なくとも1つの請求項1〜25の何れか1項に記載のマイクロ発光ダイオードと、を備え、
前記第1型半導体層、前記第2型半導体層、前記第1の縁部隔離構造、前記第1の電極、前記第2の電極からなる組み合わせは、前記基板に接続され、前記第1型半導体層は、前記基板に隣接し、前記第2型半導体層は、前記基板から離れ、且つ前記第1の電極は、前記基板の接合電極とされるマイクロ発光ダイオードディスプレイ。 - 接合電極を有する基板と、
少なくとも1つの請求項1〜25の何れか1項に記載のマイクロ発光ダイオードと、を備え、
前記第1型半導体層、前記第2型半導体層、前記第1の縁部隔離構造、前記第1の電極、前記第2の電極からなる組み合わせは、前記接合電極に接続され、前記第1型半導体層は、前記基板から離れ、且つ前記第2型半導体層は、前記基板に隣接するマイクロ発光ダイオードディスプレイ。 - 基板と、
少なくとも1つの請求項1〜25の何れか1項に記載のマイクロ発光ダイオードと、を備え、
前記第1型半導体層、前記第2型半導体層、前記第1の縁部隔離構造、前記第1の電極、前記第2の電極からなる組み合わせは、前記基板に接続され、前記第1型半導体層は、前記基板から離れ、前記第2型半導体層は、前記基板に隣接し、且つ前記第2の電極は、前記基板の接合電極とされるマイクロ発光ダイオードディスプレイ。
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