JP2016207771A - 被エッチング層をエッチングする方法 - Google Patents
被エッチング層をエッチングする方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 141
- 238000005530 etching Methods 0.000 title claims abstract description 76
- 150000002500 ions Chemical class 0.000 claims abstract description 34
- 238000012545 processing Methods 0.000 claims description 120
- 238000005040 ion trap Methods 0.000 claims description 24
- 238000001179 sorption measurement Methods 0.000 abstract description 13
- 239000007789 gas Substances 0.000 description 132
- 230000000052 comparative effect Effects 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 238000004088 simulation Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
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Abstract
Description
式(1)において、Sはラジカルの付着率、Yはイオンによるエッチングイールド、Γrはラジカルフラックス(cm−2s−1)、Γiはイオンフラックス(cm−2s−1)であり、これらのパラメータは、ラジカルの種別、イオンの種別、被エッチング層ELの材料によって定まるものである。このシミュレーションでは、被エッチング層ELとしてシリコン膜を、ラジカルとして塩素ラジカルを、イオンとしてArイオンを想定した。
<条件>
・処理ガス:150sccmのN2ガス、150sccmのH2ガス、及び1000sccmのArガス
・処理容器12の内部空間の圧力:50mTorr(6.666Pa)
・工程ST2の高周波HFのパワー:500W
・工程ST2の高周波バイアスLFのパワー:0W
・工程ST3の高周波HFのパワー:0W
<条件>
・処理容器12の内部空間の圧力:50mTorr(6.666Pa)
・第1工程の処理ガス:150sccmのN2ガス、150sccmのH2ガス、1000sccmのArガス
・第1工程の高周波HFのパワー:500W
・第1工程の高周波バイアスLFのパワー:0W
・第2工程の処理ガス:1000sccmのArガス
・第2工程の高周波HFのパワー:0W
・第2工程の高周波バイアスLFのパワー:0W
・第3工程の処理ガス:1000sccmのArガス
・第3工程の高周波HFのパワー:0W
・第4工程の処理ガス:150sccmのN2ガス、150sccmのH2ガス、1000sccmのArガス
・第4工程の高周波HFのパワー:0W
・第4工程の高周波バイアスLFのパワー:0W
<条件>
・処理ガス:150sccmのN2ガス、150sccmのH2ガス、及び1000sccmのArガス
・処理容器12の内部空間の圧力:50mTorr(6.666Pa)
・工程ST2の高周波HFのパワー:500W
・工程ST2の高周波バイアスLFのパワー:0W
・工程ST3の高周波HFのパワー:0W
・工程ST3の高周波バイアスLFのパワー:100W
Claims (5)
- 被処理体の被エッチング層をエッチングする方法であって、
プラズマ処理装置の処理容器内において下部電極を有する載置台上に前記被処理体を載置する工程と、
前記下部電極に高周波バイアスを与えずに、前記被エッチング層に、処理ガスから生成されるラジカルを吸着させる工程と、
前記下部電極に高周波バイアスを与えて、前記被エッチング層に、前記処理ガスから生成されるイオンを引き込む工程であり、ラジカルを吸着させる前記工程に連続して行われる該工程と、
を含み、
ラジカルを吸着させる前記工程とイオンを引き込む前記工程とが交互に繰り返され、
ラジカルを吸着させる前記工程では、前記被処理体が配置される前記処理容器内の空間におけるラジカルの密度が、該空間におけるイオンの密度の200倍以上の密度であり、
イオンを引き込む前記工程では、0.07W/cm2以下のパワー密度の前記高周波バイアスが下部電極に供給されるか、0.14W/cm2以下のパワー密度の前記高周波バイアスが0.5秒以下の期間、前記下部電極に供給される、
方法。 - イオンを引き込む前記工程では、0.07W/cm2以下のパワー密度の前記高周波バイアスが2秒以下の期間、前記下部電極に供給される、請求項1に記載の方法。
- イオンを引き込む前記工程の実行期間中において、前記高周波バイアスを発生する高周波電源と前記下部電極との間に設けられた整合器のインピーダンスが固定される、請求項1又は2に記載の方法。
- イオンを引き込む前記工程の実行期間中では、前記整合器の可変電気素子の可変パラメータが固定される、請求項3に記載の方法。
- 前記プラズマ処理装置は、前記載置台の上方にイオントラップを有しており、
前記処理ガスのプラズマが、前記イオントラップに対して前記載置台が配置されている側と反対の側で生成され、前記ラジカルは前記イオントラップを通過して前記被エッチング層に対して供給される、
請求項1〜4の何れか一項に記載の方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
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JP2015085884A JP6516542B2 (ja) | 2015-04-20 | 2015-04-20 | 被エッチング層をエッチングする方法 |
KR1020177029518A KR102363689B1 (ko) | 2015-04-20 | 2016-04-06 | 피에칭층을 에칭하는 방법 |
US15/567,037 US10347499B2 (en) | 2015-04-20 | 2016-04-06 | Method for etching layer to be etched |
PCT/JP2016/061283 WO2016170986A1 (ja) | 2015-04-20 | 2016-04-06 | 被エッチング層をエッチングする方法 |
CN201680021637.6A CN107431012B (zh) | 2015-04-20 | 2016-04-06 | 蚀刻被蚀刻层的方法 |
TW105111157A TWI738647B (zh) | 2015-04-20 | 2016-04-11 | 被蝕刻層之蝕刻方法 |
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JP2015085884A JP6516542B2 (ja) | 2015-04-20 | 2015-04-20 | 被エッチング層をエッチングする方法 |
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JP6516542B2 JP6516542B2 (ja) | 2019-05-22 |
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US (1) | US10347499B2 (ja) |
JP (1) | JP6516542B2 (ja) |
KR (1) | KR102363689B1 (ja) |
CN (1) | CN107431012B (ja) |
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WO (1) | WO2016170986A1 (ja) |
Cited By (2)
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KR20190024790A (ko) * | 2017-08-30 | 2019-03-08 | 도쿄엘렉트론가부시키가이샤 | 에칭 방법 및 에칭 장치 |
WO2020161879A1 (ja) * | 2019-02-08 | 2020-08-13 | 株式会社 日立ハイテクノロジーズ | ドライエッチング方法及びドライエッチング装置 |
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JP6886940B2 (ja) * | 2018-04-23 | 2021-06-16 | 東京エレクトロン株式会社 | プラズマ処理方法 |
JP7133975B2 (ja) * | 2018-05-11 | 2022-09-09 | 東京エレクトロン株式会社 | エッチング方法およびエッチング装置 |
JP7126381B2 (ja) * | 2018-05-21 | 2022-08-26 | 東京エレクトロン株式会社 | 成膜装置および成膜方法 |
US10629451B1 (en) * | 2019-02-01 | 2020-04-21 | American Air Liquide, Inc. | Method to improve profile control during selective etching of silicon nitride spacers |
JP7433095B2 (ja) * | 2020-03-18 | 2024-02-19 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
KR20230161474A (ko) * | 2021-03-30 | 2023-11-27 | 도쿄엘렉트론가부시키가이샤 | 에칭 방법 및 에칭 장치 |
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JP2012142495A (ja) * | 2011-01-05 | 2012-07-26 | Ulvac Japan Ltd | プラズマエッチング方法及びプラズマエッチング装置 |
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JPH03263827A (ja) | 1990-03-14 | 1991-11-25 | Yasuhiro Horiike | デジタルエツチング装置 |
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CN107431012B (zh) | 2020-12-08 |
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US10347499B2 (en) | 2019-07-09 |
TWI738647B (zh) | 2021-09-11 |
CN107431012A (zh) | 2017-12-01 |
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