JP2016198830A - Dry polishing device - Google Patents

Dry polishing device Download PDF

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JP2016198830A
JP2016198830A JP2015078838A JP2015078838A JP2016198830A JP 2016198830 A JP2016198830 A JP 2016198830A JP 2015078838 A JP2015078838 A JP 2015078838A JP 2015078838 A JP2015078838 A JP 2015078838A JP 2016198830 A JP2016198830 A JP 2016198830A
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polishing
wafer
hole
closed space
air
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JP6486752B2 (en
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晃一 大日野
Koichi Ohino
晃一 大日野
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Disco Corp
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Disco Abrasive Systems Ltd
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Priority to JP2015078838A priority Critical patent/JP6486752B2/en
Priority to TW105105706A priority patent/TWI681844B/en
Priority to KR1020160034618A priority patent/KR102315293B1/en
Priority to CN201610196336.9A priority patent/CN106041716B/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)

Abstract

PROBLEM TO BE SOLVED: To prevent adhesion of a foreign matter such as swarf, powder or the like to a measuring instrument for measuring a state of a wafer.SOLUTION: A dry polishing device (1) comprises: a holding table (21) for holding a wafer (W); polishing means (41) having a spindle unit (43) for mounting an abrasive pad (46) for polishing the wafer and a rotary shaft (40) in such a manner that a center of the abrasive pad and a center of the rotary shaft are made coincident with each other; and polishing feeding means which performs polishing feeding of the polishing means and the holding table in a direction such that the polishing means and the holding table relatively approach and are separated. An through-hole (48) is communicated with a hole (47) formed at the center of the abrasive pad, a closed space (63) communicated with the open hole is formed by a cover member (62) which closes a top end of the open hole, and a state of the wafer (W) is measured through the through-hole by measuring instruments (60, 61) provided in the closed space (63).SELECTED DRAWING: Figure 3

Description

本発明は、ドライ環境の加工室でウエーハを研磨する乾式研磨装置に関する。   The present invention relates to a dry polishing apparatus for polishing a wafer in a processing chamber in a dry environment.

研磨加工では、研削後のウエーハの被研削面に残存した研削歪を研磨することで抗折強度を向上させている。従来、研磨装置として研磨液を用いないでウエーハを研磨する乾式研磨装置が知られている（例えば、特許文献１参照）。特許文献１に記載の乾式研磨装置では、研磨加工で発生する研磨屑や研磨パッドの磨耗による粉等の微細な異物を、排気（吸気）にて加工室から排出し、加工室から排気した異物を湿らせて廃液として処理している。加工室をドライ環境にしたままで、異物を廃液にしているため、加工室内で異物が飛散することがなく、研磨装置が設置されているクリーンルームが汚染されることがない。   In the polishing process, the bending strength is improved by polishing the grinding distortion remaining on the ground surface of the wafer after grinding. Conventionally, a dry polishing apparatus that polishes a wafer without using a polishing liquid is known as a polishing apparatus (see, for example, Patent Document 1). In the dry polishing apparatus described in Patent Document 1, fine foreign matters such as polishing dust generated by polishing and powder due to abrasion of the polishing pad are exhausted from the processing chamber by exhaust (intake air), and the foreign matter exhausted from the processing chamber. Is treated as waste liquid. Since the foreign matter is made into the waste liquid while the processing chamber is kept in a dry environment, the foreign matter is not scattered in the processing chamber, and the clean room in which the polishing apparatus is installed is not contaminated.

また、乾式研磨装置としては、ウエーハの外径よりも大きな径の研磨パッドを用いてウエーハを研磨するものも知られている（例えば、特許文献２参照）。特許文献２に記載の乾式研磨装置は、研磨パッドの中心とウエーハの中心をずらした状態で研磨パッドをウエーハに接触させることで、より効率的に研磨パッドによってウエーハを研磨することが可能になっている。これら特許文献１、２に記載の乾式研磨装置においては、ウエーハ研磨時の摩擦熱による面焼け防止のために研磨中のウエーハの表面温度の測定や、より高精度な研磨加工のために研磨中のウエーハの厚み測定が必要とされる。   In addition, as a dry polishing apparatus, there is also known one that polishes a wafer using a polishing pad having a diameter larger than the outer diameter of the wafer (see, for example, Patent Document 2). In the dry polishing apparatus described in Patent Document 2, the wafer can be more efficiently polished by the polishing pad by bringing the polishing pad into contact with the wafer in a state where the center of the polishing pad is shifted from the center of the wafer. ing. In the dry polishing apparatuses described in Patent Documents 1 and 2, the surface temperature of the wafer during polishing is measured to prevent surface burning due to frictional heat during wafer polishing, and polishing is performed for more accurate polishing. Wafer thickness measurement is required.

特許第４４６４１１３号公報Japanese Patent No. 4464113 特許第４７５４８７０号公報Japanese Patent No. 4754870

ところで、特許文献２の乾式研磨装置では、半導体ウエーハの全面が研磨パッドに覆われているため、上記のようなウエーハの温度測定用の測定器やウエーハ厚み測定用の測定器を配設する場所が無い。この場合、研磨パッドの中心に空孔を形成し、この空孔に連なる貫通孔をスピンドルユニットに形成して、スピンドルユニットの上方から貫通孔を通じてウエーハの状態を測定する構成が考えられる。しかしながら、研磨パッドの空孔に微細な異物が入り込むと、スピンドルユニットの貫通孔を通って異物が測定器に付着して、測定器を汚染させてしまうという問題があった。   By the way, in the dry polishing apparatus of Patent Document 2, since the entire surface of the semiconductor wafer is covered with the polishing pad, a place for measuring a wafer temperature measuring instrument and a wafer thickness measuring instrument as described above is provided. There is no. In this case, a configuration is conceivable in which a hole is formed in the center of the polishing pad, a through hole connected to the hole is formed in the spindle unit, and the state of the wafer is measured from above the spindle unit through the through hole. However, when a fine foreign substance enters the hole of the polishing pad, there is a problem that the foreign substance adheres to the measuring instrument through the through hole of the spindle unit and contaminates the measuring instrument.

本発明はかかる点に鑑みてなされたものであり、ウエーハの状態を測定する測定器に、研磨屑や粉等の異物が付着することを防止できる乾式研磨装置を提供することを目的とする。   This invention is made | formed in view of this point, and it aims at providing the dry-type grinding | polishing apparatus which can prevent that foreign materials, such as grinding | polishing waste and a powder, adhere to the measuring device which measures the state of a wafer.

本発明の乾式研磨装置は、ウエーハを保持する保持テーブルと、該保持テーブルに保持されるウエーハを研磨する研磨パッドの中心と回転軸の中心とを一致させて装着するスピンドルユニットを有する研磨手段と、該研磨手段と該保持テーブルとを相対的に接近および離間させる方向に研磨送りする研磨加工送り手段と、を備える乾式研磨装置であって、該研磨手段は、該研磨パッドの中心を中心とした円柱状の空孔と、該スピンドルユニットの該回転軸の中を延在方向に貫通させ一方の端を該空孔と連通させる貫通孔と、該貫通孔の他方の端と連通する閉塞空間を形成するカバー部材と、を備え、該閉塞空間内に研磨中のウエーハの状態を測定する測定器を配設する。   A dry polishing apparatus according to the present invention includes a holding table for holding a wafer, and a polishing unit having a spindle unit for mounting the polishing pad for polishing the wafer held on the holding table so that the center of the polishing pad coincides with the center of the rotary shaft. A polishing process feeding means for polishing and feeding the polishing means and the holding table in a direction in which the polishing table and the holding table are relatively approached and separated from each other, wherein the polishing means is centered on the center of the polishing pad. A cylindrical hole, a through-hole that extends through the rotation shaft of the spindle unit in the extending direction and communicates one end with the hole, and a closed space that communicates with the other end of the through-hole. And a measuring device for measuring the state of the wafer being polished is disposed in the closed space.

この構成によれば、研磨手段の貫通孔の他方の端がカバー部材の閉塞空間によって塞がれるため、空孔及び貫通孔に対するエアの出入りが抑えられている。このため、貫通孔におけるエアの流れが無くなるため、研磨パッドやウエーハに付着している研磨屑や粉等の微細な異物が巻き上げられても、空孔及び貫通孔内に微細な異物が入り込み難くなっている。貫通孔の他方の端に連なる閉塞空間に微細な異物が入り込み難いため、閉塞空間に配設された測定器に異物が付着することを防止できる。よって、乾式研磨装置でウエーハの状態を良好に測定しながら研磨することができる。   According to this configuration, the other end of the through hole of the polishing means is closed by the closed space of the cover member, so that air can be prevented from entering and leaving the hole and the through hole. For this reason, since the air flow in the through hole is eliminated, even if a fine foreign matter such as polishing dust or powder adhering to the polishing pad or wafer is wound up, it is difficult for the fine foreign matter to enter the hole and the through hole. It has become. Since it is difficult for fine foreign matter to enter the closed space connected to the other end of the through hole, it is possible to prevent foreign matter from adhering to the measuring instrument disposed in the closed space. Therefore, it can grind | polish, measuring a wafer state favorably with a dry-type grinding | polishing apparatus.

また、上記乾式研磨装置において、該閉塞空間とエアを供給するエア供給源とを連通するエア供給手段を備え、少なくとも該研磨パッドの研磨面をウエーハの上面に接近させる研磨送り動作時に該エア供給手段によってエアを供給して該閉塞空間を陽圧にする。   The dry polishing apparatus further includes an air supply means that communicates the closed space with an air supply source that supplies air, and the air supply is performed during a polishing feed operation in which at least the polishing surface of the polishing pad approaches the upper surface of the wafer. Air is supplied by means to make the enclosed space positive.

本発明によれば、研磨手段の貫通孔の他方の端がカバー部材の閉塞空間で塞がれて、空孔及び貫通孔に対するエアの出入りが抑えられるため、ウエーハの状態を測定する測定器に微細な異物が付着することを防止できる。   According to the present invention, since the other end of the through hole of the polishing means is blocked by the closed space of the cover member, air can be prevented from entering and exiting the hole and the through hole. It is possible to prevent fine foreign matter from adhering.

第１の実施の形態に係る乾式研磨装置の斜視図である。1 is a perspective view of a dry polishing apparatus according to a first embodiment. 異物によって測定器が汚染される様子を示す説明図である。It is explanatory drawing which shows a mode that a measuring device is contaminated with a foreign material. 第１の実施の形態に係る研磨手段の研磨動作の一例を示す図である。It is a figure which shows an example of grinding | polishing operation | movement of the grinding | polishing means which concerns on 1st Embodiment. 第２の実施の形態に係る研磨手段の研磨動作の一例を示す図である。It is a figure which shows an example of grinding | polishing operation | movement of the grinding | polishing means which concerns on 2nd Embodiment.

添付図面を参照して、本実施の形態に係る乾式研磨装置について説明する。図１は、第１の実施の形態に係る乾式研磨装置の斜視図である。図２は、異物によって測定器が汚染される様子を示す説明図である。なお、本実施の形態に係る乾式研磨装置は、図１に示すような研磨専用の装置に限定されず、例えば、研削、研磨、洗浄等の一連の加工が全自動で実施されるフルオートタイプの加工装置に組み込まれてもよい。   A dry polishing apparatus according to the present embodiment will be described with reference to the accompanying drawings. FIG. 1 is a perspective view of a dry polishing apparatus according to the first embodiment. FIG. 2 is an explanatory view showing a state in which the measuring instrument is contaminated by foreign matter. Note that the dry polishing apparatus according to the present embodiment is not limited to a polishing-dedicated apparatus as shown in FIG. 1, and is, for example, a fully automatic type in which a series of processes such as grinding, polishing, and cleaning are performed automatically. It may be incorporated in the processing apparatus.

図１に示すように、乾式研磨装置１は、研磨手段４１を用いて研削後のウエーハＷを研磨することで、ウエーハＷの被研削面（上面８１）に残存した研削歪を除去するように構成されている。乾式研磨装置１は、ドライ環境の加工室（不図示）で研磨液を用いずにウエーハＷを研磨するものであり、研磨屑や研磨パッドの磨耗による粉等の微細な異物を加工室から吸引排気している。なお、ウエーハＷは、シリコン、ガリウム砒素等の半導体基板でもよいし、サファイア、炭化ケイ素等の硬質な無機材料基板でもよい。また、ウエーハＷは、デバイス形成後の半導体基板や無機材料基板でもよい。   As shown in FIG. 1, the dry polishing apparatus 1 uses a polishing means 41 to polish a ground wafer W so as to remove the grinding distortion remaining on the surface to be ground (upper surface 81) of the wafer W. It is configured. The dry polishing apparatus 1 is for polishing a wafer W without using a polishing liquid in a dry processing chamber (not shown), and sucks fine foreign matters such as polishing dust and powder due to abrasion of the polishing pad from the processing chamber. Exhaust. The wafer W may be a semiconductor substrate such as silicon or gallium arsenide, or may be a hard inorganic material substrate such as sapphire or silicon carbide. The wafer W may be a semiconductor substrate or an inorganic material substrate after device formation.

乾式研磨装置１の基台１１の上面には、Ｘ軸方向に延在する矩形状の開口が形成され、この開口は保持テーブル２１と共に移動可能なテーブルカバー１２及び蛇腹状の防塵カバー１３に覆われている。防塵カバー１３の下方には、保持テーブル２１をＸ軸方向に移動させる移動手段２４と、保持テーブル２１を連続回転させる回転手段２２とが設けられている。保持テーブル２１の表面には、多孔質のポーラス材によってウエーハＷを吸着する保持面２３が形成されている。保持面２３は、保持テーブル２１内の流路を通じて吸引源（不図示）に接続されており、保持面２３に生じる負圧によってウエーハＷが吸引保持される。   A rectangular opening extending in the X-axis direction is formed on the upper surface of the base 11 of the dry polishing apparatus 1, and this opening is covered with a table cover 12 that can move together with the holding table 21 and a bellows-shaped dust-proof cover 13. It has been broken. Below the dust cover 13, a moving unit 24 that moves the holding table 21 in the X-axis direction and a rotating unit 22 that continuously rotates the holding table 21 are provided. On the surface of the holding table 21, a holding surface 23 for adsorbing the wafer W by a porous porous material is formed. The holding surface 23 is connected to a suction source (not shown) through a flow path in the holding table 21, and the wafer W is sucked and held by the negative pressure generated on the holding surface 23.

移動手段２４は、基台１１上に配置されたＸ軸方向に平行な一対のガイドレール５１と、一対のガイドレール５１にスライド可能に設置されたモータ駆動のＸ軸テーブル５２とを有している。Ｘ軸テーブル５２の背面側には、ナット部（不図示）が形成され、このナット部にボールネジ５３が螺合されている。そして、ボールネジ５３の一端部に連結された駆動モータ５４が回転駆動されることで、保持テーブル２１が一対のガイドレール５１に沿ってＸ軸方向に動かされる。回転手段２２は、Ｘ軸テーブル５２上に設けられており、保持テーブル２１をＺ軸回りに回転可能に支持している。   The moving means 24 has a pair of guide rails 51 arranged on the base 11 and parallel to the X-axis direction, and a motor-driven X-axis table 52 slidably installed on the pair of guide rails 51. Yes. A nut portion (not shown) is formed on the back side of the X-axis table 52, and a ball screw 53 is screwed to the nut portion. Then, when the drive motor 54 connected to one end of the ball screw 53 is rotationally driven, the holding table 21 is moved along the pair of guide rails 51 in the X-axis direction. The rotating means 22 is provided on the X-axis table 52, and supports the holding table 21 so as to be rotatable around the Z-axis.

基台１１上のコラム１４には、研磨手段４１と保持テーブル２１とを相対的に接近および離間させるＺ軸方向に研磨送りする研磨加工送り手段３１が設けられている。研磨加工送り手段３１は、コラム１４に配置されたＺ軸方向に平行な一対のガイドレール３２と、一対のガイドレール３２にスライド可能に設置されたモータ駆動のＺ軸テーブル３３とを有している。Ｚ軸テーブル３３の背面側にはナット部（不図示）が形成され、このナット部にボールネジ３４が螺合されている。ボールネジ３４の一端部に連結された駆動モータ３５によりボールネジ３４が回転駆動されることで、研磨手段４１がガイドレール３２に沿って研磨送りされる。   The column 14 on the base 11 is provided with a polishing process feeding means 31 that feeds the polishing means 41 and the holding table 21 in the Z-axis direction to relatively approach and separate them. The polishing process feeding means 31 has a pair of guide rails 32 arranged in the column 14 and parallel to the Z-axis direction, and a motor-driven Z-axis table 33 slidably installed on the pair of guide rails 32. Yes. A nut portion (not shown) is formed on the back side of the Z-axis table 33, and a ball screw 34 is screwed to the nut portion. The ball screw 34 is rotationally driven by a drive motor 35 connected to one end of the ball screw 34, whereby the polishing means 41 is polished and fed along the guide rail 32.

研磨手段４１は、ハウジング４２を介してＺ軸テーブル３３の前面に取り付けられており、スピンドルユニット４３の下部に研磨パッド４６を設けて構成されている。スピンドルユニット４３にはフランジ４５が設けられ、フランジ４５を介してハウジング４２に研磨手段４１が支持される。スピンドルユニット４３の下部はマウント４４になっており、マウント４４の下面には保持テーブル２１に保持されるウエーハＷを研磨する研磨パッド４６が装着されている。研磨パッド４６は、発泡材や繊維質等で形成されており、研磨パッド４６の中心と回転軸の中心とを一致させるように、研磨手段４１のスピンドルユニット４３に装着されている。   The polishing means 41 is attached to the front surface of the Z-axis table 33 via the housing 42, and is configured by providing a polishing pad 46 below the spindle unit 43. The spindle unit 43 is provided with a flange 45, and the polishing means 41 is supported on the housing 42 via the flange 45. A lower part of the spindle unit 43 is a mount 44, and a polishing pad 46 for polishing the wafer W held on the holding table 21 is attached to the lower surface of the mount 44. The polishing pad 46 is formed of a foam material, a fiber, or the like, and is attached to the spindle unit 43 of the polishing means 41 so that the center of the polishing pad 46 and the center of the rotation shaft coincide with each other.

乾式研磨装置１には、装置各部を統括制御する制御部（不図示）が設けられている。制御部は、各種処理を実行するプロセッサやメモリ等により構成される。メモリは、用途に応じてＲＯＭ（Read Only Memory）、ＲＡＭ（Random Access Memory）等の一つ又は複数の記憶媒体で構成される。このように構成された乾式研磨装置１では、スピンドルユニット４３によって研磨パッド４６がＺ軸回りに回転されながら保持テーブル２１に接近される。そして、研磨パッド４６がウエーハＷに回転接触することで、ウエーハＷの被研削面が研磨される。   The dry polishing apparatus 1 is provided with a control unit (not shown) that controls each part of the apparatus. The control unit is configured by a processor, a memory, and the like that execute various processes. The memory is composed of one or a plurality of storage media such as a ROM (Read Only Memory) and a RAM (Random Access Memory) depending on the application. In the dry polishing apparatus 1 configured as described above, the polishing pad 46 is rotated toward the holding table 21 while being rotated about the Z axis by the spindle unit 43. Then, when the polishing pad 46 is in rotational contact with the wafer W, the surface to be ground of the wafer W is polished.

また、乾式研磨装置１の研磨中には、摩擦熱による面焼け防止のために温度測定や高精度な研磨加工のためにウエーハＷの厚み測定が実施される。しかしながら、本実施の形態の乾式研磨装置１のように、ウエーハＷの外径よりも大径の研磨パッド４６を用いてウエーハＷが研磨パッド４６に覆われている状態では、温度測定や厚み測定に用いる測定器の設置スペースがない。このため、図２Ａの比較例に示すように、研磨パッド４６の中心に空孔４７を形成し、この空孔４７に連なる貫通孔４８をスピンドルユニット４３に形成して、スピンドルユニット４３の上方から貫通孔４８を通じて測定可能なように測定器６０、６１を設置する構成が考えられる。   Further, during the polishing of the dry polishing apparatus 1, the thickness of the wafer W is measured for temperature measurement and high-precision polishing for preventing surface burn due to frictional heat. However, in the state where the wafer W is covered with the polishing pad 46 using the polishing pad 46 having a diameter larger than the outer diameter of the wafer W as in the dry polishing apparatus 1 of the present embodiment, temperature measurement or thickness measurement is performed. There is no installation space for the measuring instrument used for For this reason, as shown in the comparative example of FIG. 2A, a hole 47 is formed in the center of the polishing pad 46, and a through hole 48 connected to the hole 47 is formed in the spindle unit 43. A configuration in which the measuring devices 60 and 61 are installed so that measurement can be performed through the through hole 48 is conceivable.

しかしながら、図２Ｂに示すように、スピンドルユニット４３の貫通孔４８の真上に測定器６０、６１が存在するため、研磨加工で発生する研磨屑や研磨パッド４６の磨耗による粉等の微細な異物７０が測定器６０、６１に付着して、測定精度を劣化させるという問題が生じていた。ここで、本件発明者が、測定器６０、６１が異物７０によって汚染される様子を詳細に観察したところ、ウエーハＷの研磨中よりも研磨動作の開始時に研磨手段４１がウエーハＷに近づけられたときの勢いで、異物７０が巻き上げられて貫通孔４８を通じて測定器６０、６１に付着することが確認された。   However, as shown in FIG. 2B, since the measuring devices 60 and 61 exist directly above the through hole 48 of the spindle unit 43, fine foreign matters such as polishing dust generated by polishing and powder due to wear of the polishing pad 46 are present. 70 has adhered to the measuring instruments 60 and 61, and the problem of deteriorating measurement accuracy has arisen. Here, when the present inventors observed in detail how the measuring instruments 60 and 61 are contaminated by the foreign matter 70, the polishing means 41 was brought closer to the wafer W at the start of the polishing operation than during the polishing of the wafer W. At that moment, it was confirmed that the foreign material 70 was wound up and adhered to the measuring devices 60 and 61 through the through hole 48.

これは、研磨パッド４６がウエーハＷに近づけられた時に、研磨パッド４６の研磨面４９とウエーハＷの上面８１との隙間のエアが圧縮されて空孔４７を介して貫通孔４８に入り込み、貫通孔４８の上端（他方の端）から噴き出るエアの流れが出来るからだと思われる。そこで、本実施の形態では、このエアの流れを遮断するように貫通孔４８の上端をカバー部材６２（図３参照）で塞ぐようにしている。そして、カバー部材６２に貫通孔４８の上端に連なる閉塞空間６３を設け、この閉塞空間６３内に測定器６０、６１を配設することで、貫通孔４８におけるエアの流れを無くして測定器６０、６１に対する異物７０の付着を抑えている。   This is because when the polishing pad 46 is brought close to the wafer W, the air in the gap between the polishing surface 49 of the polishing pad 46 and the upper surface 81 of the wafer W is compressed and enters the through hole 48 through the hole 47, This is considered to be due to the flow of air ejected from the upper end (the other end) of the hole 48. Therefore, in the present embodiment, the upper end of the through hole 48 is closed with the cover member 62 (see FIG. 3) so as to block the air flow. The cover member 62 is provided with a closed space 63 connected to the upper end of the through hole 48, and the measuring devices 60 and 61 are disposed in the closed space 63, thereby eliminating the air flow in the through hole 48 and measuring device 60. , 61 is prevented from adhering to the foreign material 70.

以下、図３を参照して、研磨手段の構成及び研磨動作について詳細に説明する。図３は、第１の実施の形態に係る研磨手段の研磨動作の一例を示す図である。なお、以下の説明では、説明の便宜上、スピンドルユニットのスピンドルケースを省略して、回転軸が露出された状態を例示して説明する。   Hereinafter, the configuration of the polishing means and the polishing operation will be described in detail with reference to FIG. FIG. 3 is a diagram illustrating an example of the polishing operation of the polishing unit according to the first embodiment. In the following description, for convenience of explanation, the spindle case of the spindle unit is omitted, and an example in which the rotating shaft is exposed will be described.

図３Ａに示すように、スピンドルユニット４３内の回転軸４０の下部にはマウント４４が設けられており、マウント４４には保持テーブル２１上のウエーハＷの外径よりも大径の研磨パッド４６が装着されている。研磨パッド４６の中心には空孔４７が開口しており、スピンドルユニット４３の回転軸４０の中心には貫通孔４８が延在方向（上下方向）に貫通している。貫通孔４８の一方の端（下端）は研磨パッド４６の空孔４７に連通している。すなわち、研磨手段４１は、研磨パッド４６の中心を中心とした円柱状の空孔４７と、回転軸４０の中を延在方向に貫通する貫通孔４８とを備えている。   As shown in FIG. 3A, a mount 44 is provided below the rotary shaft 40 in the spindle unit 43, and a polishing pad 46 having a diameter larger than the outer diameter of the wafer W on the holding table 21 is provided on the mount 44. It is installed. A hole 47 is opened at the center of the polishing pad 46, and a through hole 48 passes through the center of the rotating shaft 40 of the spindle unit 43 in the extending direction (vertical direction). One end (lower end) of the through hole 48 communicates with the hole 47 of the polishing pad 46. That is, the polishing means 41 includes a cylindrical hole 47 centered on the center of the polishing pad 46 and a through hole 48 penetrating through the rotating shaft 40 in the extending direction.

また、研磨手段４１は、貫通孔４８の他方の端（上端）を塞いで、貫通孔４８内のエアの流れを抑えるカバー部材６２を備えている。カバー部材６２には、貫通孔４８の他方の端に連通する閉塞空間６３が形成されており、閉塞空間６３内に研磨中のウエーハＷの状態を測定する測定器６０、６１が配設されている。測定器６０、６１は、貫通孔４８の真上に配設されており、貫通孔４８及び空孔４７を介して真上からウエーハＷの状態を測定する。このとき、貫通孔４８の他方の端がカバー部材６２で塞がれるため、貫通孔４８を通じて閉塞空間６３内の測定器６０、６１に向かうエアの流れが抑えられている。   Further, the polishing means 41 includes a cover member 62 that blocks the other end (upper end) of the through hole 48 and suppresses the air flow in the through hole 48. The cover member 62 is formed with a closed space 63 communicating with the other end of the through hole 48, and measuring devices 60 and 61 for measuring the state of the wafer W being polished are disposed in the closed space 63. Yes. The measuring devices 60 and 61 are disposed directly above the through hole 48 and measure the state of the wafer W from directly above via the through hole 48 and the hole 47. At this time, since the other end of the through hole 48 is closed by the cover member 62, the air flow toward the measuring devices 60 and 61 in the closed space 63 through the through hole 48 is suppressed.

ここで、研磨中のウエーハＷの状態としては、上記したように、ウエーハＷの表面温度、ウエーハＷの厚み等を挙げることができる。測定器６０は、いわゆる放射温度計であり、非接触でウエーハＷの表面温度を測定する。測定器６１は、干渉分光器等の光センサであり、非接触でウエーハＷの厚みを測定する。測定器６０、６１の測定結果から研磨中のウエーハＷの表面温度や研磨量が測定され、摩擦熱による面焼けを防止すると共にウエーハＷを高精度に研磨することができる。これら測定器６０、６１の測定結果は研磨中に制御部（不図示）に出力されて、制御部によって測定結果に基づいて研磨手段４１の動作が制御される。   Here, examples of the state of the wafer W during polishing include the surface temperature of the wafer W, the thickness of the wafer W, and the like. The measuring device 60 is a so-called radiation thermometer, and measures the surface temperature of the wafer W in a non-contact manner. The measuring device 61 is an optical sensor such as an interference spectrometer, and measures the thickness of the wafer W in a non-contact manner. From the measurement results of the measuring devices 60 and 61, the surface temperature and the polishing amount of the wafer W being polished can be measured, and surface burning due to frictional heat can be prevented and the wafer W can be polished with high accuracy. The measurement results of these measuring devices 60 and 61 are output to a control unit (not shown) during polishing, and the control unit controls the operation of the polishing means 41 based on the measurement results.

この研磨手段４１では、保持テーブル２１上にウエーハＷが載置されると、保持テーブル２１の保持面２３にウエーハＷが保持される。保持テーブル２１が研磨手段４１の下方に移動されて、研磨パッド４６の真下にウエーハＷが位置付けられる。このとき、ウエーハＷから研磨パッド４６が十分に離間した待機位置に研磨手段４１が停止されているため、ウエーハＷの上面８１と研磨パッド４６の研磨面４９の間や貫通孔４８内にエアの流れが生じていない。そして、研磨手段４１が研磨パッド４６を回転させながら、待機位置からウエーハＷの上面８１に向かって移動される。   In the polishing means 41, when the wafer W is placed on the holding table 21, the wafer W is held on the holding surface 23 of the holding table 21. The holding table 21 is moved below the polishing means 41, and the wafer W is positioned directly below the polishing pad 46. At this time, since the polishing means 41 is stopped at a standby position where the polishing pad 46 is sufficiently separated from the wafer W, air is introduced between the upper surface 81 of the wafer W and the polishing surface 49 of the polishing pad 46 or in the through hole 48. There is no flow. Then, the polishing means 41 is moved from the standby position toward the upper surface 81 of the wafer W while rotating the polishing pad 46.

図３Ｂに示すように、研磨パッド４６の研磨面４９がウエーハＷの上面８１に近づけられると、研磨パッド４６の研磨面４９とウエーハＷの上面８１との隙間のエアが圧縮される。隙間内のエアがウエーハＷの上面８１に沿って逃げようとするが、貫通孔４８の他方の端、すなわち上端がカバー部材６２に塞がれているため、ウエーハＷの径方向内側にはエアの逃げ道が無くなっている。このため、隙間内のエアはウエーハＷの径方向外側に向かって流れ、空孔４７及び貫通孔４８内にエアが流れることが防止される。貫通孔４８を上方に抜けるエアの逃げ道がカバー部材６２に遮断されることでエアの流れがコントロールされている。   As shown in FIG. 3B, when the polishing surface 49 of the polishing pad 46 is brought close to the upper surface 81 of the wafer W, the air in the gap between the polishing surface 49 of the polishing pad 46 and the upper surface 81 of the wafer W is compressed. The air in the gap tends to escape along the upper surface 81 of the wafer W, but the other end, that is, the upper end of the through hole 48 is blocked by the cover member 62, so that the air is radially inward of the wafer W. There is no way to escape. For this reason, the air in the gap flows toward the outside in the radial direction of the wafer W, and the air is prevented from flowing into the air holes 47 and the through holes 48. The flow of air is controlled by the cover member 62 blocking the air escape path that passes through the through hole 48 upward.

このとき、ウエーハＷの径方向外側に向かってエアが流れるため、研磨パッド４６やウエーハＷに付着している微細な異物７０の巻き上げが防止される。仮に巻き上げられた場合であっても、貫通孔４８内にエアの流れが無いため貫通孔４８内に異物７０が入り込み難くなっている。よって、貫通孔４８を通じて閉塞空間６３に異物７０が入り込み難くなっており、閉塞空間６３に配設された測定器６０、６１に対する異物７０の付着が防止される。このように、カバー部材６２によってエアの流れをウエーハＷの径方向外側に誘導することで、簡易な構成で測定器６０、６１に対する異物７０の付着を防止している。   At this time, since air flows toward the outer side in the radial direction of the wafer W, the fine foreign matter 70 adhering to the polishing pad 46 and the wafer W is prevented from being rolled up. Even if it is wound up, the foreign matter 70 is difficult to enter the through hole 48 because there is no air flow in the through hole 48. Therefore, it is difficult for the foreign material 70 to enter the closed space 63 through the through hole 48, and the foreign material 70 is prevented from adhering to the measuring devices 60 and 61 disposed in the closed space 63. As described above, the air flow is guided to the outside in the radial direction of the wafer W by the cover member 62, thereby preventing the foreign matter 70 from adhering to the measuring devices 60 and 61 with a simple configuration.

図３Ｃに示すように、研磨パッド４６の研磨面４９がウエーハＷの上面８１に接触されると、ウエーハＷの上面８１が研磨パッド４６によって研磨される。このとき、閉塞空間６３内の測定器６０、６１によってウエーハＷの表面温度や厚みがリアルタイムに測定され、測定器６０、６１の測定結果に基づいて研磨手段４１が制御される。測定器６０によって測定された温度が、面焼けが生じる温度を下回っている間はウエーハＷの研磨が続けられ、面焼けが生じる温度になるとウエーハＷの研磨が中止される。そして、測定器６１に測定されたウエーハＷの厚みが、研削歪が除去される目標の厚みになるまで研磨手段４１が研磨送りされる。   As shown in FIG. 3C, when the polishing surface 49 of the polishing pad 46 comes into contact with the upper surface 81 of the wafer W, the upper surface 81 of the wafer W is polished by the polishing pad 46. At this time, the surface temperature and thickness of the wafer W are measured in real time by the measuring devices 60 and 61 in the closed space 63, and the polishing means 41 is controlled based on the measurement results of the measuring devices 60 and 61. The polishing of the wafer W is continued while the temperature measured by the measuring device 60 is lower than the temperature at which surface burning occurs, and the polishing of the wafer W is stopped when the temperature at which surface burning occurs. Then, the polishing means 41 is polished and fed until the thickness of the wafer W measured by the measuring instrument 61 reaches a target thickness from which grinding distortion is removed.

以上、第１の実施の形態に係る乾式研磨装置１においては、研磨手段４１の貫通孔４８の上端がカバー部材６２の閉塞空間６３によって塞がれるため、空孔４７及び貫通孔４８に対するエアの出入りが抑えられている。このため、貫通孔４８におけるエアの流れが無くなるため、研磨パッド４６やウエーハＷに付着している研磨屑や粉等の微細な異物７０が巻き上げられても、空孔４７及び貫通孔４８内に微細な異物７０が入り込み難くなっている。貫通孔４８の上端に連なる閉塞空間６３に微細な異物７０が入り込み難いため、閉塞空間６３に配設された測定器６０、６１に異物７０が付着することを防止できる。よって、乾式研磨装置１でウエーハＷの状態を良好に測定しながら研磨することができる。   As described above, in the dry polishing apparatus 1 according to the first embodiment, since the upper end of the through hole 48 of the polishing means 41 is closed by the closed space 63 of the cover member 62, the air to the air holes 47 and the through holes 48 is blocked. Going in and out is suppressed. For this reason, since the flow of air in the through hole 48 is eliminated, even if a fine foreign matter 70 such as polishing debris or powder adhering to the polishing pad 46 or the wafer W is wound up, the air hole 47 and the through hole 48 are filled. Fine foreign matter 70 is difficult to enter. Since it is difficult for the fine foreign matter 70 to enter the closed space 63 connected to the upper end of the through hole 48, it is possible to prevent the foreign matter 70 from adhering to the measuring devices 60 and 61 disposed in the closed space 63. Therefore, the dry polishing apparatus 1 can polish the wafer W while measuring the state of the wafer W well.

次に、図４を参照して、第２の実施の形態に係る乾式研磨装置における研磨手段について説明する。図４は、第２の実施の形態に係る研磨手段の研磨動作の一例を示す図である。なお、第２の実施の形態では、貫通孔内を陽圧にしながら研磨パッドをウエーハに接近させる点で第１の実施の形態と相違している。したがって、主に相違点について詳細に説明する。また、以下の説明では、説明の便宜上、スピンドルユニットのスピンドルケースを省略して、回転軸が露出された状態を例示して説明する。   Next, with reference to FIG. 4, the polishing means in the dry polishing apparatus according to the second embodiment will be described. FIG. 4 is a diagram illustrating an example of the polishing operation of the polishing unit according to the second embodiment. The second embodiment is different from the first embodiment in that the polishing pad is brought close to the wafer while the inside of the through hole is set to a positive pressure. Therefore, the differences will be mainly described in detail. Further, in the following description, for convenience of explanation, the spindle case of the spindle unit is omitted, and an example in which the rotating shaft is exposed will be described.

図４Ａに示すように、第２の実施の形態に係る研磨手段４１は、閉塞空間６３とエアを供給するエア供給源６５とを連通するエア供給手段６４が設けられていること以外は、第１の実施の形態に係る研磨手段４１と同一の構成である。エア供給手段６４は、少なくとも研磨パッド４６の研磨面４９がウエーハＷの上面８１に接近させる研磨送り動作時に、閉塞空間６３にエアを供給して閉塞空間６３を陽圧にするように構成されている。なお、エア供給源６５は、エア供給手段６４を介して閉塞空間６３にエアを供給可能な構成であればよく、例えば、乾式研磨装置１が設置される工場内に設けられていてもよいし、装置自体に設けられていてもよい。   As shown in FIG. 4A, the polishing means 41 according to the second embodiment is the same as that shown in FIG. 4 except that an air supply means 64 that connects the closed space 63 and an air supply source 65 that supplies air is provided. The configuration is the same as that of the polishing means 41 according to the first embodiment. The air supply means 64 is configured to supply air to the closed space 63 to make the closed space 63 positive pressure during a polishing feed operation in which at least the polishing surface 49 of the polishing pad 46 approaches the upper surface 81 of the wafer W. Yes. The air supply source 65 only needs to be configured to be able to supply air to the closed space 63 via the air supply means 64. For example, the air supply source 65 may be provided in a factory where the dry polishing apparatus 1 is installed. The device itself may be provided.

この研磨手段４１では、保持テーブル２１上にウエーハＷが載置されると、保持テーブル２１の保持面２３にウエーハＷが保持される。保持テーブル２１が研磨手段４１の下方に移動されて、研磨パッド４６の真下にウエーハＷが位置付けられる。このとき、ウエーハＷから研磨パッド４６が十分に離間した待機位置に研磨手段４１が停止されているため、ウエーハＷの上面８１と研磨パッド４６の研磨面４９の間や貫通孔４８内にエアの流れが生じていない。そして、研磨手段４１が研磨パッド４６を回転させながら、待機位置からウエーハＷの上面８１に向かって移動される。   In the polishing means 41, when the wafer W is placed on the holding table 21, the wafer W is held on the holding surface 23 of the holding table 21. The holding table 21 is moved below the polishing means 41, and the wafer W is positioned directly below the polishing pad 46. At this time, since the polishing means 41 is stopped at a standby position where the polishing pad 46 is sufficiently separated from the wafer W, air is introduced between the upper surface 81 of the wafer W and the polishing surface 49 of the polishing pad 46 or in the through hole 48. There is no flow. Then, the polishing means 41 is moved from the standby position toward the upper surface 81 of the wafer W while rotating the polishing pad 46.

図４Ｂに示すように、研磨パッド４６が待機位置からウエーハＷに向けて下降されると、エア供給手段６４によってエア供給源６５から閉塞空間６３にエアが供給される。この場合、エア供給手段６４の管路に設けた開閉バルブ（不図示）によって閉塞空間６３へのエアの供給が制御されている。閉塞空間６３にエアが供給されると、閉塞空間６３が陽圧になって閉塞空間６３に連通する貫通孔４８及び空孔４７も陽圧になる。よって、研磨パッド４６の研磨面４９とウエーハＷの上面８１との隙間のエアが圧縮されても、隙間内のエアはウエーハＷの径方向外側に向かって流れる。   As shown in FIG. 4B, when the polishing pad 46 is lowered from the standby position toward the wafer W, air is supplied from the air supply source 65 to the closed space 63 by the air supply unit 64. In this case, the supply of air to the closed space 63 is controlled by an open / close valve (not shown) provided in the pipeline of the air supply means 64. When air is supplied to the closed space 63, the closed space 63 becomes positive pressure, and the through holes 48 and the air holes 47 communicating with the closed space 63 also become positive pressure. Therefore, even if the air in the gap between the polishing surface 49 of the polishing pad 46 and the upper surface 81 of the wafer W is compressed, the air in the gap flows toward the outside in the radial direction of the wafer W.

このとき、ウエーハＷの径方向外側に向かってエアが流れるため、研磨パッド４６やウエーハＷに付着している微細な異物７０の巻き上げが防止される。仮に巻き上げられた場合であっても、貫通孔４８内にエアの流れが無いため貫通孔４８内に異物７０が入り込み難くなっている。よって、貫通孔４８を通じて閉塞空間６３に異物７０が入り込むことがなく、閉塞空間６３に配設された測定器６０、６１に異物７０が付着することがない。このように、エア供給手段６４によってウエーハＷの径方向外側に向かうエアの流れを作り出すことで、測定器６０、６１に対する異物７０の付着を確実に防止している。   At this time, since air flows toward the outer side in the radial direction of the wafer W, the fine foreign matter 70 adhering to the polishing pad 46 and the wafer W is prevented from being rolled up. Even if it is wound up, the foreign matter 70 is difficult to enter the through hole 48 because there is no air flow in the through hole 48. Therefore, the foreign material 70 does not enter the closed space 63 through the through hole 48, and the foreign material 70 does not adhere to the measuring devices 60 and 61 disposed in the closed space 63. In this way, the air supply means 64 creates an air flow toward the outside in the radial direction of the wafer W, thereby reliably preventing the foreign matter 70 from adhering to the measuring devices 60 and 61.

図４Ｃに示すように、研磨パッド４６の研磨面４９がウエーハＷの上面８１に接触されると、エア供給源６５からのエアの供給が停止され、ウエーハＷの上面８１が研磨パッド４６によって研磨される。このとき、閉塞空間６３内の測定器６０、６１によってウエーハＷの表面温度や厚みがリアルタイムに測定され、測定器６０、６１の測定結果に基づいて研磨手段４１が制御される。測定器６０によって測定された温度が、面焼けが生じる温度を下回っている間はウエーハＷの研磨が続けられ、面焼けが生じる温度になるとウエーハＷの研磨が中止される。そして、測定器６１に測定されたウエーハＷの厚みが目標の厚みになるまで研磨手段４１が研磨送りされる。   As shown in FIG. 4C, when the polishing surface 49 of the polishing pad 46 comes into contact with the upper surface 81 of the wafer W, the supply of air from the air supply source 65 is stopped, and the upper surface 81 of the wafer W is polished by the polishing pad 46. Is done. At this time, the surface temperature and thickness of the wafer W are measured in real time by the measuring devices 60 and 61 in the closed space 63, and the polishing means 41 is controlled based on the measurement results of the measuring devices 60 and 61. The polishing of the wafer W is continued while the temperature measured by the measuring device 60 is lower than the temperature at which surface burning occurs, and the polishing of the wafer W is stopped when the temperature at which surface burning occurs. Then, the polishing means 41 is polished and fed until the thickness of the wafer W measured by the measuring device 61 reaches a target thickness.

以上、第２の実施の形態に係る乾式研磨装置１においては、測定器６０、６１が配設された閉塞空間６３を陽圧にすることで、貫通孔４８を通じて空孔４７からウエーハＷに向かってエアが噴き出される。よって、研磨手段４１の研磨送り動作時に、空孔４７及び貫通孔４８に空気が入り込むことがなく、閉塞空間６３に配設された測定器６０、６１に異物７０が付着することがない。よって、乾式研磨装置１でウエーハＷの状態を良好に測定しながら研磨することができる。   As described above, in the dry polishing apparatus 1 according to the second embodiment, the closed space 63 in which the measuring devices 60 and 61 are disposed is set to a positive pressure so that the hole 47 is directed to the wafer W through the through hole 48. Air is blown out. Therefore, during the polishing feed operation of the polishing means 41, air does not enter the holes 47 and the through holes 48, and the foreign matter 70 does not adhere to the measuring devices 60 and 61 disposed in the closed space 63. Therefore, the dry polishing apparatus 1 can polish the wafer W while measuring the state of the wafer W well.

なお、本発明は上記実施の形態に限定されず、種々変更して実施することが可能である。上記実施の形態において、添付図面に図示されている大きさや形状などについては、これに限定されず、本発明の効果を発揮する範囲内で適宜変更することが可能である。その他、本発明の目的の範囲を逸脱しない限りにおいて適宜変更して実施することが可能である。   In addition, this invention is not limited to the said embodiment, It can change and implement variously. In the above-described embodiment, the size, shape, and the like illustrated in the accompanying drawings are not limited to this, and can be appropriately changed within a range in which the effect of the present invention is exhibited. In addition, various modifications can be made without departing from the scope of the object of the present invention.

例えば、第１、第２の実施の形態では、研磨パッド４６がウエーハＷの全面を覆うことができる大きさを有する構成にしたが、この構成に限定されない。研磨パッド４６は、ウエーハＷよりも小さく形成されていてもよい。   For example, in the first and second embodiments, the polishing pad 46 has a size that can cover the entire surface of the wafer W. However, the present invention is not limited to this configuration. The polishing pad 46 may be formed smaller than the wafer W.

また、第１、第２の実施の形態では、研磨加工送り手段３１によって保持テーブル２１に対して研磨パッド４６を研磨送りする構成にしたが、この構成に限定されない。研磨加工送り手段３１は、研磨手段４１と保持テーブル２１とを相対的に接近及び離間させる方向に研磨送りする構成であればよく、研磨パッド４６に対して保持テーブル２１を研磨送りする構成にしてもよい。   In the first and second embodiments, the polishing pad 46 is polished and fed to the holding table 21 by the polishing process feeding means 31, but the present invention is not limited to this configuration. The polishing processing feed means 31 may be configured to polish and feed the polishing table 41 and the holding table 21 in a direction in which the polishing table 41 and the holding table 21 are relatively approached and separated from each other. Also good.

また、第１、第２の実施の形態では、研磨パッド４６に円柱状の空孔４７が形成されたが、この構成に限定されない。研磨パッド４６の空孔４７の形は特に限定されず、測定器６０、６１の測定を阻害しないように形成されていればよい。   In the first and second embodiments, the cylindrical holes 47 are formed in the polishing pad 46. However, the present invention is not limited to this configuration. The shape of the hole 47 of the polishing pad 46 is not particularly limited as long as it is formed so as not to disturb the measurement of the measuring devices 60 and 61.

また、第１、第２の実施の形態では、カバー部材６２が貫通孔４８の上端を塞ぐように設けられる構成について説明したが、この構成に限定されない。カバー部材６２は、貫通孔４８の上端を完全に塞ぐ構成に限定されず、閉塞空間６３まで異物７０が進入しない程度にエアの逃げ道が形成されていてもよい。すなわち、閉塞空間６３は完全にエアの逃げ道が無い状態に限定されない。   In the first and second embodiments, the configuration in which the cover member 62 is provided so as to close the upper end of the through hole 48 has been described. However, the present invention is not limited to this configuration. The cover member 62 is not limited to a configuration in which the upper end of the through hole 48 is completely blocked, and an air escape path may be formed so that the foreign matter 70 does not enter the closed space 63. That is, the closed space 63 is not limited to a state where there is no complete air escape path.

また、第１、第２の実施の形態では、乾式研磨装置１が測定器６０、６１によってウエーハＷの表面温度と厚みを同時に測定する構成について説明したが、この構成に限定されない。乾式研磨装置１は、測定器６０又は測定器６１によって、ウエーハＷの表面温度と厚みのいずれかを測定してもよい。また、乾式研磨装置１は、ウエーハＷの表面温度及び厚み以外の研磨中のウエーハＷの状態を測定する測定器を備えていてもよい。   In the first and second embodiments, the configuration in which the dry polishing apparatus 1 simultaneously measures the surface temperature and thickness of the wafer W using the measuring devices 60 and 61 has been described. However, the present invention is not limited to this configuration. The dry polishing apparatus 1 may measure either the surface temperature or the thickness of the wafer W using the measuring device 60 or the measuring device 61. Further, the dry polishing apparatus 1 may include a measuring instrument that measures the state of the wafer W during polishing other than the surface temperature and thickness of the wafer W.

また、第２の実施の形態では、研磨パッド４６の研磨面４９がウエーハＷの上面８１に接触するまで、エア供給手段６４によって閉塞空間６３にエアが供給される構成にしたが、この構成に限定されない。エア供給手段６４は、少なくとも研磨パッド４６の研磨面４９をウエーハＷの上面８１に接近させる研磨送り動作時に閉塞空間６３にエアを供給する構成であればよい。例えば、エア供給手段６４は、研磨中に常に閉塞空間６３にエアを供給し続けてもよいし、研磨パッド４６の研磨面４９とウエーハＷの上面８１の接触直前の一瞬だけ閉塞空間６３にエアを供給してもよい。   In the second embodiment, the air supply unit 64 supplies air to the closed space 63 until the polishing surface 49 of the polishing pad 46 contacts the upper surface 81 of the wafer W. It is not limited. The air supply means 64 may be configured to supply air to the closed space 63 during a polishing feed operation in which at least the polishing surface 49 of the polishing pad 46 is brought close to the upper surface 81 of the wafer W. For example, the air supply means 64 may continue to supply air to the closed space 63 during polishing, or air is supplied to the closed space 63 for a moment immediately before the contact between the polishing surface 49 of the polishing pad 46 and the upper surface 81 of the wafer W. May be supplied.

以上説明したように、本発明は、ウエーハの状態を測定する測定器に対する研磨屑や粉等の異物の付着を防止することができるという効果を有し、特に、ドライ環境の加工室でウエーハを研磨する乾式研磨装置に有用である。   As described above, the present invention has an effect that it is possible to prevent adhesion of foreign matters such as polishing dust and powder to a measuring instrument that measures the state of a wafer, and in particular, a wafer is processed in a processing chamber in a dry environment. This is useful for a dry polishing apparatus for polishing.

１ 乾式研磨装置
２１ 保持テーブル
３１ 研磨加工送り手段
４０ 回転軸
４１ 研磨手段
４３ スピンドルユニット
４６ 研磨パッド
４７ 空孔
４８ 貫通孔
６０、６１ 測定器
６２ カバー部材
６３ 閉塞空間
６４ エア供給手段
６５ エア供給源
Ｗ ウエーハ DESCRIPTION OF SYMBOLS 1 Dry polisher 21 Holding table 31 Polishing process feed means 40 Rotating shaft 41 Polishing means 43 Spindle unit 46 Polishing pad 47 Hole 48 Through hole 60, 61 Measuring device 62 Cover member 63 Closed space 64 Air supply means 65 Air supply source W Wafer

Claims (2)

ウエーハを保持する保持テーブルと、該保持テーブルに保持されるウエーハを研磨する研磨パッドの中心と回転軸の中心とを一致させて装着するスピンドルユニットを有する研磨手段と、該研磨手段と該保持テーブルとを相対的に接近および離間させる方向に研磨送りする研磨加工送り手段と、を備える乾式研磨装置であって、
該研磨手段は、該研磨パッドの中心を中心とした円柱状の空孔と、該スピンドルユニットの該回転軸の中を延在方向に貫通させ一方の端を該空孔と連通させる貫通孔と、該貫通孔の他方の端と連通する閉塞空間を形成するカバー部材と、を備え、該閉塞空間内に研磨中のウエーハの状態を測定する測定器を配設する乾式研磨装置。 A polishing table having a holding table for holding a wafer, a spindle unit for mounting the polishing pad for polishing the wafer held on the holding table so that the center of the polishing pad is aligned with the center of the rotating shaft, the polishing unit and the holding table A polishing process feeding means for polishing and feeding in a direction for relatively approaching and separating, and a dry polishing apparatus comprising:
The polishing means includes a cylindrical hole centered on the center of the polishing pad, a through hole that penetrates the rotating shaft of the spindle unit in the extending direction and communicates one end with the hole. And a cover member that forms a closed space that communicates with the other end of the through hole, and a measuring apparatus that measures the state of the wafer being polished is disposed in the closed space. 該閉塞空間とエアを供給するエア供給源とを連通するエア供給手段を備え、少なくとも該研磨パッドの研磨面をウエーハの上面に接近させる研磨送り動作時に該エア供給手段によってエアを供給して該閉塞空間を陽圧にする請求項１記載の乾式研磨装置。   An air supply means for communicating the closed space and an air supply source for supplying air, and supplying air by the air supply means during at least a polishing feed operation for bringing the polishing surface of the polishing pad closer to the upper surface of the wafer; The dry polishing apparatus according to claim 1, wherein the closed space is set to a positive pressure.
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JP2014103213A (en) * 2012-11-19 2014-06-05 Tokyo Seimitsu Co Ltd Method for measuring semiconductor wafer thickness and semiconductor wafer processing device

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