JP2016197626A - 圧電膜、およびその製造方法 - Google Patents
圧電膜、およびその製造方法 Download PDFInfo
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- JP2016197626A JP2016197626A JP2015075983A JP2015075983A JP2016197626A JP 2016197626 A JP2016197626 A JP 2016197626A JP 2015075983 A JP2015075983 A JP 2015075983A JP 2015075983 A JP2015075983 A JP 2015075983A JP 2016197626 A JP2016197626 A JP 2016197626A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical compound FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 claims abstract description 35
- MIZLGWKEZAPEFJ-UHFFFAOYSA-N 1,1,2-trifluoroethene Chemical group FC=C(F)F MIZLGWKEZAPEFJ-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229920001577 copolymer Polymers 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims description 14
- 238000001035 drying Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 7
- 239000002904 solvent Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 abstract description 8
- 238000002425 crystallisation Methods 0.000 abstract description 4
- 230000008025 crystallization Effects 0.000 abstract description 4
- 230000000052 comparative effect Effects 0.000 description 5
- 230000010287 polarization Effects 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000013329 compounding Methods 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- 229910003472 fullerene Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/857—Macromolecular compositions
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F14/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
- C08F14/18—Monomers containing fluorine
- C08F14/20—Vinyl fluoride
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F14/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
- C08F14/18—Monomers containing fluorine
- C08F14/22—Vinylidene fluoride
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F214/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
- C08F214/18—Monomers containing fluorine
- C08F214/22—Vinylidene fluoride
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D127/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Coating compositions based on derivatives of such polymers
- C09D127/02—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Coating compositions based on derivatives of such polymers not modified by chemical after-treatment
- C09D127/12—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Coating compositions based on derivatives of such polymers not modified by chemical after-treatment containing fluorine atoms
- C09D127/16—Homopolymers or copolymers of vinylidene fluoride
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/077—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition
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- H10N30/01—Manufacture or treatment
- H10N30/09—Forming piezoelectric or electrostrictive materials
- H10N30/098—Forming organic materials
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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Abstract
Description
また、分子量が60万/mol未満であると、圧電膜の耐変形性が低下する不具合が生ずる。
前記圧電膜は、基板に塗布して、乾燥し、前記乾燥して形成した共重合体の膜を140℃以上から150℃以下の温度範囲にて熱処理し、結晶化して、圧電特性を発生させている。
図1は、圧電膜の製造方法の工程フロー図である。圧電膜の製造工程は、調液工程→塗布工程→乾燥工程→熱処理、結晶化→電極形成→分極の順番にて実施され、P(VDF/TrFE)圧電膜が作製される。
調液工程
フッ化ビニリデン(VDF)と、トリフルオロエチレン(TrFE)との共重合体と、溶媒(DMF)との溶液を作製する。
塗布工程
基板となるPET基材を準備し、前記PET基材の上に、前記溶液を塗布する。常温での乾燥時の塗布膜の厚みは、50μmである。
乾燥工程
ホットプレートを使用し、80℃、1時間、ドラフト内で、大気下にて、塗布された膜を乾燥する。
熱処理、結晶化
オーブンにて、140℃以上から150℃以下の温度範囲にて膜を熱処理し、結晶化し、圧電特性を発生させる。
電極形成
抵抗加熱式の真空蒸着機を使用し、気圧1〜3×10-5Paの範囲にてアルミを加熱蒸発させ、膜の両面に電極被膜を形成する。
分極
分極処理は、膜をシリコンオイル中に配置し、膜両面の電極間に直接、振幅120MV/m、周波数50mHzの三角波を5周期以上印加し行う。
表1は、実施例(発明品1,2)の圧電膜の、引張り強さ、破断歪み、弾性率の数値と、比較例(1,2,3)の圧電膜の、引張り強さ、破断歪み、弾性率の数値との比較一覧表を示す。
図3は、圧電膜(P(VDF/TrFE)の各配合比の試料に関する、熱特性である。図3にて、圧電膜のVDF/TrFEの比率が、59/41,75/25,81/19の試料では、141℃以下にキュリー点に相当する吸熱ピークが存在している。
注) キュリー点
圧電性を示す強誘電相から、圧電性を示さない常誘電相への相転移温度一方、圧電膜のVDF/TrFEの比率が、85/15である2つの試料に関しては、融点である159℃までキュリー点に相当する吸熱ピークが無い。この結果より、圧電膜のVDF/TrFEの比率が85/15の試料は、高温耐熱性が優れていることが確認された。
Claims (5)
- フッ化ビニリデンとトリフルオロエチレンとの共重合体からなる圧電膜であって、
フッ化ビニリデンが、82モル%以上から86モル%以下の範囲であって、
分子量が60万/mol以上であることを特徴とする圧電膜。 - 前記圧電膜は、基板に塗布して、乾燥し、前記乾燥して形成した共重合体の膜を140℃以上から150℃以下の温度範囲にて、熱処理し、結晶化して、圧電特性を発生させたことを特徴とする請求項1記載の圧電膜。
- 前記圧電膜は、耐熱性が140℃以上であり、
破断歪みが、8%以上から55%以下の範囲にあって耐変形性に優れていることを特徴とする請求項1または2記載の圧電膜。 - フッ化ビニリデンが、82モル%以上から86モル%以下の範囲であって、分子量が60万/mol以上であるフッ化ビニリデンとトリフルオロエチレンとの共重合体と溶媒との溶液を、基板に塗布して、乾燥し、前記乾燥して形成した共重合体の膜を、140℃以上から150℃以下の温度範囲にて熱処理し、結晶化して、圧電特性を発生させたことを特徴とする圧電膜の製造方法。
- 前記圧電膜は、耐熱性が140℃以上であり、
破断歪みが、8%以上から55%以下の範囲にあることを特徴とする請求項4記載の圧電膜の製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015075983A JP6633834B2 (ja) | 2015-04-02 | 2015-04-02 | 圧電膜、およびその製造方法 |
EP16773234.6A EP3279954B1 (en) | 2015-04-02 | 2016-04-01 | Process for producing a piezoelectric film |
US15/563,739 US10535811B2 (en) | 2015-04-02 | 2016-04-01 | Piezoelectric film and process for producing same |
CN201680020672.6A CN107534080B (zh) | 2015-04-02 | 2016-04-01 | 压电膜及其制造方法 |
PCT/JP2016/060933 WO2016159354A1 (ja) | 2015-04-02 | 2016-04-01 | 圧電膜、およびその製造方法 |
KR1020177031434A KR102651023B1 (ko) | 2015-04-02 | 2016-04-01 | 압전막 및 이의 제조방법 |
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JP2015075983A JP6633834B2 (ja) | 2015-04-02 | 2015-04-02 | 圧電膜、およびその製造方法 |
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JP2016197626A true JP2016197626A (ja) | 2016-11-24 |
JP6633834B2 JP6633834B2 (ja) | 2020-01-22 |
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US (1) | US10535811B2 (ja) |
EP (1) | EP3279954B1 (ja) |
JP (1) | JP6633834B2 (ja) |
KR (1) | KR102651023B1 (ja) |
CN (1) | CN107534080B (ja) |
WO (1) | WO2016159354A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018139190A1 (ja) | 2017-01-26 | 2018-08-02 | 株式会社イデアルスター | 圧電膜、およびその製造方法 |
WO2020012660A1 (ja) * | 2018-07-13 | 2020-01-16 | 株式会社イデアルスター | 圧電材料および圧電材料用組成物 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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TW202037664A (zh) | 2018-11-28 | 2020-10-16 | 日商大阪有機化學工業股份有限公司 | 壓電材料及壓電材料用組成物 |
CN110752286B (zh) * | 2019-10-25 | 2023-04-07 | 业成科技(成都)有限公司 | 压电薄膜及其制备方法和压电薄膜传感器 |
CN114685916B (zh) * | 2020-12-31 | 2023-09-05 | 浙江蓝天环保高科技股份有限公司 | 一种聚合物压电材料及其制备方法 |
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WO2018139190A1 (ja) | 2017-01-26 | 2018-08-02 | 株式会社イデアルスター | 圧電膜、およびその製造方法 |
KR20190105100A (ko) | 2017-01-26 | 2019-09-11 | 가부시키가이샤 이디알 스타 | 압전막, 및 그 제조방법 |
EP3576171A4 (en) * | 2017-01-26 | 2020-12-30 | Ideal Star Inc. | PIEZOELECTRIC FILM AND ITS PRODUCTION PROCESS |
WO2020012660A1 (ja) * | 2018-07-13 | 2020-01-16 | 株式会社イデアルスター | 圧電材料および圧電材料用組成物 |
JPWO2020012660A1 (ja) * | 2018-07-13 | 2021-08-12 | 株式会社イデアルスター | 圧電材料および圧電材料用組成物 |
JP7240681B2 (ja) | 2018-07-13 | 2023-03-16 | 株式会社イデアルスター | 圧電材料および圧電材料用組成物 |
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CN107534080A (zh) | 2018-01-02 |
CN107534080B (zh) | 2020-08-28 |
KR20170134564A (ko) | 2017-12-06 |
JP6633834B2 (ja) | 2020-01-22 |
US10535811B2 (en) | 2020-01-14 |
US20180097171A1 (en) | 2018-04-05 |
EP3279954A1 (en) | 2018-02-07 |
EP3279954B1 (en) | 2022-12-07 |
EP3279954A4 (en) | 2018-10-31 |
WO2016159354A1 (ja) | 2016-10-06 |
KR102651023B1 (ko) | 2024-03-25 |
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