JP2016157943A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2016157943A JP2016157943A JP2016031585A JP2016031585A JP2016157943A JP 2016157943 A JP2016157943 A JP 2016157943A JP 2016031585 A JP2016031585 A JP 2016031585A JP 2016031585 A JP2016031585 A JP 2016031585A JP 2016157943 A JP2016157943 A JP 2016157943A
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- Prior art keywords
- conductor
- metal oxide
- transistor
- insulator
- oxide
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 232
- 239000004020 conductor Substances 0.000 claims abstract description 436
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 331
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 331
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- 239000011701 zinc Substances 0.000 claims description 21
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- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical group [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 15
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Classifications
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/66818—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET the channel being thinned after patterning, e.g. sacrificial oxidation on fin
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- H—ELECTRICITY
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
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- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
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Abstract
【解決手段】基板上の第1の絶縁体と、第1の絶縁体上の第1の金属酸化物と、第1の金属酸化物上の第2の金属酸化物と、第2の金属酸化物上の第1の導電体および第2の導電体と、第2の金属酸化物、第1の導電体および第2の導電体上の第3の金属酸化物と、第3の金属酸化物上の第2の絶縁体と、第2の絶縁体上の第3の導電体と、を有し、第2の金属酸化物は、第1の金属酸化物の上面および側面と接する領域を有し、第2の金属酸化物は、チャネル形成領域を有する半導体装置である。
【選択図】図1
Description
本実施の形態では、本発明の一態様に係る半導体装置である、トランジスタおよびその作製方法の一例について説明する。
本実施の形態では、実施の形態1で示したトランジスタとは一部異なるトランジスタおよびその作製方法について説明する。本実施の形態におけるトランジスタは、ソース電極およびドレイン電極として機能する導電体の形成方法が、実施の形態1におけるトランジスタとは異なる。
本実施の形態では、実施の形態1および実施の形態2で示したトランジスタとは一部異なるトランジスタおよびその作製方法について説明する。本実施の形態におけるトランジスタは、ゲート電極として機能する導電体の形成方法が、実施の形態1におけるトランジスタとは異なる。
本実施の形態では、実施の形態1乃至実施の形態3で示したトランジスタとは一部異なるトランジスタについて説明する。本実施の形態におけるトランジスタは、チャネル形成領域を有する金属酸化物の形成方法が、実施の形態1におけるトランジスタとは異なる。
<記憶装置1>本発明の一態様に係るトランジスタを用いた、電力が供給されない状況でも記憶内容の保持が可能で、かつ、書き込み回数にも制限が無い半導体装置(記憶装置)の一例を図24に示す。
102 トランジスタ
103 トランジスタ
104 トランジスタ
200 撮像装置
201 基板
202 導電体
203 スイッチ
205 絶縁体
206 スイッチ
207 スイッチ
208 画素回路
209 配線
210 画素部
211 画素
212 副画素
212B 副画素
212G 副画素
212R 副画素
213a 金属酸化物
213b 金属酸化物
213c 金属酸化物
213d 金属酸化物
213e 金属酸化物
213f 金属酸化物
213g 金属酸化物
213h 金属酸化物
213i 金属酸化物
214 金属酸化物
215a 導電体
215b 導電体
216a 導電体
216b 導電体
216c 導電体
217a 導電体
217b 導電体
217c 導電体
220 光電変換素子
222 絶縁体
223 絶縁体
224 導電体
225 導電体
230 絶縁体
231 導電体
232 金属酸化物
233 絶縁体
234 導電体
236 絶縁体
237 絶縁体
238 絶縁体
239 絶縁体
240 導電体
241 絶縁体
244 導電体
247 配線
248 配線
249 配線
250 配線
253 配線
254 フィルタ
254B フィルタ
254G フィルタ
254R フィルタ
255 レンズ
256 光
257 配線
260 周辺回路
270 周辺回路
280 周辺回路
290 周辺回路
291 光源
401 絶縁体
402 絶縁体
406a 金属酸化物
406b 金属酸化物
406c 金属酸化物
410 絶縁体
428 絶縁体
450 半導体基板
454 導電体
460 領域
462 絶縁体
464 絶縁体
465 絶縁体
466 絶縁体
467 絶縁体
468 絶縁体
469 絶縁体
470 絶縁体
472 絶縁体
474a 領域
474b 領域
475 絶縁体
476a 導電体
476b 導電体
476c 導電体
477a 導電体
477b 導電体
477c 導電体
478a 導電体
478b 導電体
478c 導電体
479a 導電体
479b 導電体
479c 導電体
480a 導電体
480b 導電体
480c 導電体
483a 導電体
483b 導電体
483c 導電体
483d 導電体
484a 導電体
484b 導電体
484c 導電体
484d 導電体
485a 導電体
485b 導電体
485c 導電体
485d 導電体
487a 導電体
487b 導電体
487c 導電体
488a 導電体
488b 導電体
488c 導電体
489a 導電体
489b 導電体
490a 導電体
490b 導電体
491a 導電体
491b 導電体
491c 導電体
492a 導電体
492b 導電体
492c 導電体
494 導電体
496 導電体
498 絶縁体
901 筐体
902 筐体
903 表示部
904 表示部
905 マイクロフォン
906 スピーカー
907 操作キー
908 スタイラス
911 筐体
912 筐体
913 表示部
914 表示部
915 接続部
916 操作キー
921 筐体
922 表示部
923 キーボード
924 ポインティングデバイス
931 筐体
932 冷蔵室用扉
933 冷凍室用扉
941 筐体
942 筐体
943 表示部
944 操作キー
945 レンズ
946 接続部
951 車体
952 車輪
953 ダッシュボード
954 ライト
1189 ROMインターフェース
1190 基板
1191 ALU
1192 ALUコントローラ
1193 インストラクションデコーダ
1194 インタラプトコントローラ
1195 タイミングコントローラ
1196 レジスタ
1197 レジスタコントローラ
1198 バスインターフェース
1199 ROM
1200 記憶素子
1201 回路
1202 回路
1203 スイッチ
1204 スイッチ
1206 論理素子
1207 容量素子
1208 容量素子
1209 トランジスタ
1210 トランジスタ
1213 トランジスタ
1214 トランジスタ
1220 回路
2100 トランジスタ
2200 トランジスタ
3001 配線
3002 配線
3003 配線
3004 配線
3005 配線
3200 トランジスタ
3300 トランジスタ
3400 容量素子
5000 基板
5001 画素部
5002 走査線駆動回路
5003 走査線駆動回路
5004 信号線駆動回路
5010 容量配線
5012 ゲート配線
5013 ゲート配線
5014 ドレイン電極
5016 トランジスタ
5017 トランジスタ
5018 液晶素子
5019 液晶素子
5020 画素
5021 スイッチング用トランジスタ
5022 駆動用トランジスタ
5023 容量素子
5024 発光素子
5025 信号線
5026 走査線
5027 電源線
5028 共通電極
5100 ペレット
5120 基板
5161 領域
Claims (7)
- 基板上の第1の絶縁体と、
前記第1の絶縁体上の第1の金属酸化物と、
前記第1の金属酸化物上の第2の金属酸化物と、
前記第2の金属酸化物上の第1の導電体および第2の導電体と、
前記第2の金属酸化物、前記第1の導電体および前記第2の導電体上の第3の金属酸化物と、
前記第3の金属酸化物上の第2の絶縁体と、
前記第2の絶縁体上の第3の導電体と、を有し、
前記第2の金属酸化物は、前記第1の金属酸化物の上面および側面と接する領域を有し、
前記第2の金属酸化物は、チャネル形成領域を有することを特徴とする半導体装置。 - 請求項1において、
前記第1乃至第3の金属酸化物は、インジウム、亜鉛および元素M(元素Mはアルミニウム、ガリウム、イットリウムまたはスズ)から選ばれた一種以上を有することを特徴とする半導体装置。 - 請求項1または請求項2において、
前記第1の導電体または前記第2の導電体は、チャネル幅方向の断面形状において、前記第2の金属酸化物の上面および側面と接する領域を有することを特徴とする半導体装置。 - 基板上の第1の絶縁体と、
前記第1の絶縁体上の第1の金属酸化物と、
前記第1の金属酸化物上の第2の金属酸化物と、
前記第2の金属酸化物上の第3の金属酸化物と、
前記第3の金属酸化物上の第4の金属酸化物と、
前記第4の金属酸化物上の第1の導電体および第2の導電体と、
前記第4の金属酸化物、前記第1の導電体および前記第2の導電体上の第5の金属酸化物と、
前記第5の金属酸化物上の第2の絶縁体と、
前記第2の絶縁体上の第3の導電体と、を有し、
前記第4の金属酸化物は、前記第3の金属酸化物の上面および側面と接する領域を有し、
前記第2の金属酸化物および前記第4の金属酸化物は、チャネル形成領域を有することを特徴とする半導体装置。 - 請求項4において、
前記第1乃至第5の金属酸化物は、インジウム、亜鉛および元素M(元素Mはアルミニウム、ガリウム、イットリウムまたはスズ)から選ばれた一種以上を有することを特徴とする半導体装置。 - 請求項4または請求項5において、
前記第1の導電体または前記第2の導電体は、チャネル幅方向の断面形状において、前記第4の金属酸化物の上面および側面と接する領域を有することを特徴とする半導体装置。 - 請求項1乃至請求項6のいずれか一項において、
前記第1の絶縁体の下に、さらに第4の導電体を有することを特徴とする半導体装置。
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WO2024079586A1 (ja) * | 2022-10-14 | 2024-04-18 | 株式会社半導体エネルギー研究所 | 半導体装置、及び記憶装置 |
WO2024095108A1 (ja) * | 2022-11-03 | 2024-05-10 | 株式会社半導体エネルギー研究所 | 半導体装置、及び記憶装置 |
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WO2020115595A1 (ja) * | 2018-12-07 | 2020-06-11 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
JPWO2020115595A1 (ja) * | 2018-12-07 | 2021-12-23 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
JP7391875B2 (ja) | 2018-12-07 | 2023-12-05 | 株式会社半導体エネルギー研究所 | 半導体装置 |
WO2024079586A1 (ja) * | 2022-10-14 | 2024-04-18 | 株式会社半導体エネルギー研究所 | 半導体装置、及び記憶装置 |
WO2024095108A1 (ja) * | 2022-11-03 | 2024-05-10 | 株式会社半導体エネルギー研究所 | 半導体装置、及び記憶装置 |
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JP2020145473A (ja) | 2020-09-10 |
JP6711642B2 (ja) | 2020-06-17 |
US20160247929A1 (en) | 2016-08-25 |
US9722092B2 (en) | 2017-08-01 |
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