JP2016131224A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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Abstract
Description
実施の形態1にかかる半導体装置の構造について説明する。図1は、実施の形態1にかかる半導体装置の要部の概略を示す説明図である。図1(a)にはトレンチ構造部(MOSゲート部)の平面構造を示し、図1(b)には図1(a)の切断線A−A’における断面構造を示す。図1(a)では、第1,2ゲート絶縁膜4,14、層間絶縁膜およびエミッタ電極8を図示省略する(図14においても同様)。図1に示すように、実施の形態1にかかる半導体装置は、トレンチゲート型のIGBTと、このIGBTに逆並列に接続したダイオードとを同一の半導体基板(半導体チップ)上に一体化したRC−IGBTである。具体的には、同一の半導体基板上に、IGBTの動作領域となるIGBT部(第1素子部)21と、ダイオードの動作領域となるダイオード部(第2素子部)22とが並列に設けられている。
次に、実施の形態2にかかる半導体装置の構造について説明する。図14は、実施の形態2にかかる半導体装置の要部の概略を示す説明図である。図14(a)にはトレンチ構造部の平面構造を示し、図14(b)には図14(a)の切断線B−B’における断面構造を示す。実施の形態2にかかる半導体装置が実施の形態1にかかる半導体装置と異なる点は、ダイオード部22の第2トレンチ23の深さをIGBT部21の第1トレンチ3の深さよりも浅くした点である。第2トレンチ23の底部は、例えば、p型ベース領域2とn-型ドリフト層1との境界よりもコレクタ側に位置する。第2トレンチ23の内部には、実施の形態1と同様に、第2トレンチ23の内壁に沿って第2ゲート絶縁膜14が設けられ、第2ゲート絶縁膜14の内側に第2ゲート電極15が設けられている。
次に、実施例にかかる半導体装置のダイオードの逆回復波形について説明する。図15は、実施例にかかる半導体装置の逆回復波形を示す特性図である。まず、上述した実施の形態1にかかる半導体装置の製造方法にしたがい、上述した諸条件で、トレンチゲート型のIGBTと、このIGBTに逆並列に接続したダイオードとを同一の半導体基板上に一体化したRC−IGBTを作製した(以下、実施例とする)。この実施例の逆回復波形(逆回復電圧Vr、逆回復電流Ir)を図15に示す。また、図15には、IGBT部121とダイオード部122とに同じ構成のトレンチ構造部を配置した従来のRC−IGBT(図19参照)の逆回復波形も示す。すなわち、従来例は、ダイオード部122のトレンチ構造部の構成が実施例と異なる。
2 p型ベース領域
3 第1トレンチ
3a 第1トレンチ上部
3b 第1トレンチ下部
4 第1ゲート絶縁膜
4a 第1ゲート絶縁膜上部
4b 第1ゲート絶縁膜下部
5 第1ゲート電極
6 n+型エミッタ領域
7 p+型コンタクト領域
8 エミッタ電極
9 n型FS層
10 コレクタ電極
11 p+型コレクタ領域
12 n+型カソード領域
13,23 第2トレンチ
14 第2ゲート絶縁膜
15 第2ゲート電極
21 IGBT部
22 ダイオード部
30 n型FZウエハ
31,36 酸化膜マスク
32 第1酸化膜
33 窒化膜
34 第2酸化膜
35,38 低抵抗ポリシリコン層
37 第3酸化膜
t1 第1ゲート絶縁膜上部の厚さ
t2 第1ゲート絶縁膜下部の厚さ
t3 第2ゲート絶縁膜の厚さ
w1 第1トレンチ上部の幅
w2 第1トレンチ下部の幅
w3,w4 第2トレンチの幅
w5 第1トレンチ下部の幅と第1ゲート絶縁膜下部の厚さとの総和
Claims (7)
- 同一の半導体基板上に、絶縁ゲート型バイポーラトランジスタの動作領域となる第1素子部と、ダイオードの動作領域となる第2素子部とが並列に配置された半導体装置であって、
前記第1素子部は、
第1導電型の前記半導体基板からなる第1導電型の半導体層と、
前記半導体層の一方の主面側に設けられた第2導電型の第1半導体領域と、
前記第1半導体領域の内部に選択的に設けられた第1導電型の第2半導体領域と、
前記第2半導体領域および前記第1半導体領域を貫通して前記半導体層に達する第1トレンチと、
前記第1トレンチの内部に第1ゲート絶縁膜を介して設けられた第1ゲート電極と、
前記半導体層の他方の主面側に設けられた第2導電型の第3半導体領域と、を有し、
前記第2素子部は、
前記第1半導体領域と、
前記第1半導体領域を貫通して前記半導体層に達する第2トレンチと、
前記第2トレンチの内部に第2ゲート絶縁膜を介して設けられた第2ゲート電極と、
前記半導体層の他方の主面側に設けられた第1導電型の第4半導体領域と、を有し、
前記第1半導体領域および前記第2半導体領域に接する第1電極と、
前記第3半導体領域および前記第4半導体領域に接する第2電極と、
を備え、
前記第2トレンチの幅は、深さ方向に一様、または、前記第1電極側から前記第2電極側に向うほど狭いことを特徴とする半導体装置。 - 前記第2トレンチの深さは、前記第1トレンチの深さよりも浅いことを特徴とする請求項1に記載の半導体装置。
- 隣り合う前記第1トレンチ間に挟まれた部分は、前記第1電極側の部分よりも前記第2電極側の部分が狭いことを特徴とする請求項1または2に記載の半導体装置。
- 前記第1ゲート絶縁膜の厚さが前記第1電極側の部分よりも前記第2電極側の部分で厚く形成され、隣り合う前記第1トレンチ間に挟まれた部分が前記第1電極側の部分よりも前記第2電極側の部分で狭く形成されていることを特徴とする請求項3に記載の半導体装置。
- 前記第1ゲート絶縁膜の前記第2電極側の部分と、前記第1ゲート電極との界面は、前記第1ゲート絶縁膜の前記第1電極側の部分と、前記第1ゲート電極との界面よりも前記第1トレンチの内部側に位置することを特徴とする請求項4に記載の半導体装置。
- 前記第1トレンチの幅は、前記第1電極側のトレンチ上部よりも前記第2電極側のトレンチ下部で狭くなっており、
前記トレンチ上部と前記トレンチ下部との境界は、前記第1半導体領域と前記半導体層との境界よりも前記第1電極側に位置することを特徴とする請求項1〜5のいずれか一つに記載の半導体装置。 - 前記トレンチ上部の幅は、前記トレンチ下部の幅と前記トレンチ下部の両側壁の前記第1ゲート絶縁膜の厚さとの総和よりも狭いことを特徴とする請求項6に記載の半導体装置。
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016139719A (ja) * | 2015-01-28 | 2016-08-04 | 株式会社東芝 | 半導体装置 |
US10847640B2 (en) | 2016-08-12 | 2020-11-24 | Fuji Electric Co., Ltd. | Semiconductor device and manufacturing method of semiconductor device |
US11195941B2 (en) | 2017-10-18 | 2021-12-07 | Fuji Electric Co., Ltd. | Semiconductor device |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017050331A (ja) * | 2015-08-31 | 2017-03-09 | 株式会社東芝 | 半導体装置および半導体装置の製造方法 |
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JP2018022776A (ja) * | 2016-08-03 | 2018-02-08 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
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Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005101514A (ja) * | 2003-08-27 | 2005-04-14 | Mitsubishi Electric Corp | 絶縁ゲート型トランジスタ及びインバータ回路 |
JP2010251608A (ja) * | 2009-04-17 | 2010-11-04 | Fuji Electric Systems Co Ltd | 半導体装置 |
JP2010263149A (ja) * | 2009-05-11 | 2010-11-18 | Toyota Motor Corp | 半導体装置 |
JP2012043890A (ja) * | 2010-08-17 | 2012-03-01 | Denso Corp | 半導体装置 |
JP2012064849A (ja) * | 2010-09-17 | 2012-03-29 | Toshiba Corp | 半導体装置 |
JP2012080074A (ja) * | 2010-09-08 | 2012-04-19 | Denso Corp | 半導体装置 |
JP2012204377A (ja) * | 2011-03-23 | 2012-10-22 | Toshiba Corp | 電力用半導体装置 |
JP2013084922A (ja) * | 2011-09-27 | 2013-05-09 | Denso Corp | 半導体装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008192737A (ja) | 2007-02-02 | 2008-08-21 | Denso Corp | 半導体装置 |
EP2003694B1 (en) * | 2007-06-14 | 2011-11-23 | Denso Corporation | Semiconductor device |
JP5811861B2 (ja) | 2012-01-23 | 2015-11-11 | 株式会社デンソー | 半導体装置の製造方法 |
-
2015
- 2015-01-15 JP JP2015005625A patent/JP6524666B2/ja active Active
- 2015-12-04 US US14/960,274 patent/US9614106B2/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005101514A (ja) * | 2003-08-27 | 2005-04-14 | Mitsubishi Electric Corp | 絶縁ゲート型トランジスタ及びインバータ回路 |
JP2010251608A (ja) * | 2009-04-17 | 2010-11-04 | Fuji Electric Systems Co Ltd | 半導体装置 |
JP2010263149A (ja) * | 2009-05-11 | 2010-11-18 | Toyota Motor Corp | 半導体装置 |
JP2012043890A (ja) * | 2010-08-17 | 2012-03-01 | Denso Corp | 半導体装置 |
JP2012080074A (ja) * | 2010-09-08 | 2012-04-19 | Denso Corp | 半導体装置 |
JP2012064849A (ja) * | 2010-09-17 | 2012-03-29 | Toshiba Corp | 半導体装置 |
JP2012204377A (ja) * | 2011-03-23 | 2012-10-22 | Toshiba Corp | 電力用半導体装置 |
JP2013084922A (ja) * | 2011-09-27 | 2013-05-09 | Denso Corp | 半導体装置 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016139719A (ja) * | 2015-01-28 | 2016-08-04 | 株式会社東芝 | 半導体装置 |
US10297593B2 (en) | 2015-01-28 | 2019-05-21 | Kabushiki Kaisha Toshiba | Semiconductor device |
US10847640B2 (en) | 2016-08-12 | 2020-11-24 | Fuji Electric Co., Ltd. | Semiconductor device and manufacturing method of semiconductor device |
US11552185B2 (en) | 2016-08-12 | 2023-01-10 | Fuji Electric Co., Ltd. | Semiconductor device and manufacturing method of semiconductor device |
US11923444B2 (en) | 2016-08-12 | 2024-03-05 | Fuji Electric Co., Ltd. | Semiconductor device and manufacturing method of semiconductor device |
US11195941B2 (en) | 2017-10-18 | 2021-12-07 | Fuji Electric Co., Ltd. | Semiconductor device |
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