JP2016111063A - 変色層として金属酸化物微粒子を使用したプラズマ処理検知インジケータ - Google Patents
変色層として金属酸化物微粒子を使用したプラズマ処理検知インジケータ Download PDFInfo
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- 239000010453 quartz Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 150000004685 tetrahydrates Chemical class 0.000 description 1
- 235000010215 titanium dioxide Nutrition 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- CMPGARWFYBADJI-UHFFFAOYSA-L tungstic acid Chemical compound O[W](O)(=O)=O CMPGARWFYBADJI-UHFFFAOYSA-L 0.000 description 1
- 239000002759 woven fabric Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H—ELECTRICITY
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C14/52—Means for observation of the coating process
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- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G29/00—Compounds of bismuth
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- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G31/00—Compounds of vanadium
- C01G31/02—Oxides
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- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
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- C—CHEMISTRY; METALLURGY
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- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G41/00—Compounds of tungsten
- C01G41/02—Oxides; Hydroxides
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/50—Sympathetic, colour changing or similar inks
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K9/00—Tenebrescent materials, i.e. materials for which the range of wavelengths for energy absorption is changed as a result of excitation by some form of energy
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- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C16/52—Controlling or regulating the coating process
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- C23C24/085—Coating with metallic material, i.e. metals or metal alloys, optionally comprising hard particles, e.g. oxides, carbides or nitrides
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- C—CHEMISTRY; METALLURGY
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- C—CHEMISTRY; METALLURGY
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Abstract
Description
1. プラズマ処理により変色する変色層を有するプラズマ処理検知インジケータであって、
前記変色層は、Mo、W、Sn、V、Ce、Te及びBiからなる群から選択される少なくとも一種の元素を含む平均粒子径が50μm以下の金属酸化物微粒子を含有するプラズマ処理検知インジケータ。
2. 前記金属酸化物微粒子は、酸化モリブデン微粒子(IV)、酸化モリブデン微粒子(VI)、酸化タングステン微粒子(VI)、酸化スズ微粒子(IV)、酸化バナジウム微粒子(II)、酸化バナジウム微粒子(III)、酸化バナジウム微粒子(IV)、酸化バナジウム微粒子(V)、酸化セリウム微粒子(IV)、酸化テルル微粒子(IV)、酸化ビスマス微粒子(III)、炭酸酸化ビスマス微粒子(III)及び酸化硫酸バナジウム微粒子(IV)からなる群から選択される少なくとも一種である、上記項1に記載のプラズマ処理検知インジケータ。
3. 前記金属酸化物微粒子は、酸化モリブデン微粒子(VI)、酸化タングステン微粒子(VI)、酸化バナジウム微粒子(III)、酸化バナジウム微粒子(V)及び酸化ビスマス微粒子(III)からなる群から選択される少なくとも一種である、上記項1又は2に記載のプラズマ処理検知インジケータ。
4. 前記変色層を支持する基材を有する、上記項1〜3のいずれかに記載のプラズマ処理検知インジケータ。
5. 電子デバイス製造装置で使用するインジケータである、上記項1〜4のいずれかに記載のプラズマ処理検知インジケータ。
6. 前記インジケータの形状が、前記電子デバイス製造装置で使用される電子デバイス基板の形状と同一である、上記項5に記載のプラズマ処理検知インジケータ。
7. 前記電子デバイス製造装置は、成膜工程、エッチング工程、アッシング工程、不純物添加工程及び洗浄工程からなる群から選択される少なくとも一種のプラズマ処理を行う、上記項5又は6のいずれかに記載のプラズマ処理検知インジケータ。
8. プラズマ処理により変色しない非変色層を有する、上記項1〜7のいずれかに記載のプラズマ処理検知インジケータ。
9. 前記非変色層は、酸化チタン(IV)、酸化ジルコニウム(IV)、酸化イットリウム(III)、硫酸バリウム、酸化マグネシウム、二酸化ケイ素、アルミナ、アルミニウム、銀、イットリウム、ジルコニウム、チタン、白金からなる群から選択される少なくとも一種を含有する、上記項8に記載のプラズマ処理検知インジケータ。
10. 前記基材上に、前記非変色層及び前記変色層が順に形成されており、前記非変色層が、前記基材の主面上に隣接して形成されており、前記変色層が、前記非変色層の主面上に隣接して形成されている、上記項8又は9に記載のプラズマ処理検知インジケータ。
本発明のインジケータは、プラズマ処理により変色する変色層を有し、前記変色層は、Mo、W、Sn、V、Ce、Te及びBiからなる群から選択される少なくとも一種の元素を含む平均粒子径が50μm以下の金属酸化物微粒子を含有する。特に本発明では、プラズマ処理により金属酸化物微粒子の価数が変化することで化学的に変色が生じる。かかる金属酸化物微粒子は、有機成分とは異なり、プラズマ処理によりガス化したり微細な屑となって飛散したりすることが、電子デバイス特性に影響を及ぼさない程度に抑制されている上、電子デバイス製造時のプロセス温度に耐え得る耐熱性を有する。
本発明のインジケータは、上記変色層を支持する基材を有していてもよい。
本発明のインジケータは、変色層の視認性を高めるために下地層としてプラズマ処理により変色しない非変色層を設けてもよい。非変色層としては、耐熱性があり、且つガス化しないことも求められる。かかる非変色層としては、白色層、メタル層等が好ましい。
本発明のインジケータは、必要に応じて、裏面(インジケータをプラズマ処理装置内の底面に配置した際に当該底面と接触する面)に粘着層を有していてもよい。インジケータの裏面に粘着層を有することにより、本発明のインジケータをプラズマ処理装置内の所望部位(例えばプラズマ処理に供する対象物、装置底面等)に確実に固定することができるため好ましい。
本発明のインジケータの形状は特に限定されず、公知のプラズマ処理検知インジケータに採用されている形状を幅広く用いることができる。この中でも本発明のインジケータの形状を電子デバイス製造装置で使用される電子デバイス基板の形状と同一とする場合には、いわゆるダミー基板として、簡便にプラズマ処理が電子デバイス基板全体に対して均一に行われているかどうかを検知することが可能となる。
プラズマとしては、特に限定されず、プラズマ発生用ガスによって発生するプラズマを使用することができる。プラズマの中でも、酸素、窒素、水素、塩素、アルゴン、シラン、アンモニア、臭化硫黄、三塩化ホウ素、臭化水素、水蒸気、亜酸化窒素、テトラエトキシシラン、三フッ化窒素、四フッ化炭素、パーフルオロシクロブタン、ジフルオロメタン、トリフルオロメタン、四塩化炭素、四塩化ケイ素、六フッ化硫黄、六フッ化エタン、四塩化チタン、ジクロロシラン、トリメチルガリウム、トリメチルインジウム、及びトリメチルアルミニウムからなる群から選ばれた少なくとも一種のプラズマ発生用ガスによって発生するプラズマが好ましい。これらのプラズマ発生用ガスの中でも、特に四フッ化炭素;パーフルオロシクロブタン;トリフルオロメタン;六フッ化硫黄;アルゴンと酸素との混合ガス;からなる群から選択される少なくとも一種が好ましい。
・試料1:Bi2O3微粒子(平均粒子径0.05μm)
・試料2:Bi2O3微粒子(平均粒子径0.20μm)
・試料3:Bi2O3微粒子(平均粒子径3.20μm)
・試料4:Bi2O3微粒子(平均粒子径7.80μm)
・試料5:Bi2O3微粒子(平均粒子径12.7μm)
・試料6:Bi2O3微粒子(平均粒子径21.2μm)
・試料7:Bi2O3微粒子(平均粒子径51.8μm;比較例)
下記表1に示す組成のスラリーを用意し、それをポリイミドフィルム上に塗布することによりポリイミドフィルムに厚さ20μmのBi2O3微粒子の塗膜を印刷した。これにより、ポリイミドフィルム上に薄膜の変色層を積層したインジケータを作製した。
図1は、誘導結合プラズマ(ICP;Inductively Coupled Plasma)型のプラズマエッチング装置の概略断面図である。
図3は、容量結合プラズマ(平行平板型;Capacitively Coupled Plasma)型のプラズマエッチング装置の概略断面図である。
Claims (10)
- プラズマ処理により変色する変色層を有するプラズマ処理検知インジケータであって、
前記変色層は、Mo、W、Sn、V、Ce、Te及びBiからなる群から選択される少なくとも一種の元素を含む平均粒子径が50μm以下の金属酸化物微粒子を含有するプラズマ処理検知インジケータ。 - 前記金属酸化物微粒子は、酸化モリブデン微粒子(IV)、酸化モリブデン微粒子(VI)、酸化タングステン微粒子(VI)、酸化スズ微粒子(IV)、酸化バナジウム微粒子(II)、酸化バナジウム微粒子(III)、酸化バナジウム微粒子(IV)、酸化バナジウム微粒子(V)、酸化セリウム微粒子(IV)、酸化テルル微粒子(IV)、酸化ビスマス微粒子(III)、炭酸酸化ビスマス微粒子(III)及び酸化硫酸バナジウム微粒子(IV)からなる群から選択される少なくとも一種である、請求項1に記載のプラズマ処理検知インジケータ。
- 前記金属酸化物微粒子は、酸化モリブデン微粒子(VI)、酸化タングステン微粒子(VI)、酸化バナジウム微粒子(III)、酸化バナジウム微粒子(V)及び酸化ビスマス微粒子(III)からなる群から選択される少なくとも一種である、請求項1又は2に記載のプラズマ処理検知インジケータ。
- 前記変色層を支持する基材を有する、請求項1〜3のいずれかに記載のプラズマ処理検知インジケータ。
- 電子デバイス製造装置で使用するインジケータである、請求項1〜4のいずれかに記載のプラズマ処理検知インジケータ。
- 前記インジケータの形状が、前記電子デバイス製造装置で使用される電子デバイス基板の形状と同一である、請求項5に記載のプラズマ処理検知インジケータ。
- 前記電子デバイス製造装置は、成膜工程、エッチング工程、アッシング工程、不純物添加工程及び洗浄工程からなる群から選択される少なくとも一種のプラズマ処理を行う、請求項5又は6のいずれかに記載のプラズマ処理検知インジケータ。
- プラズマ処理により変色しない非変色層を有する、請求項1〜7のいずれかに記載のプラズマ処理検知インジケータ。
- 前記非変色層は、酸化チタン(IV)、酸化ジルコニウム(IV)、酸化イットリウム(III)、硫酸バリウム、酸化マグネシウム、二酸化ケイ素、アルミナ、アルミニウム、銀、イットリウム、ジルコニウム、チタン、白金からなる群から選択される少なくとも一種を含有する、請求項8に記載のプラズマ処理検知インジケータ。
- 前記基材上に、前記非変色層及び前記変色層が順に形成されており、前記非変色層が、前記基材の主面上に隣接して形成されており、前記変色層が、前記非変色層の主面上に隣接して形成されている、請求項8又は9に記載のプラズマ処理検知インジケータ。
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20160141192A1 (en) | 2013-08-22 | 2016-05-19 | Sakura Color Products Corporation | Indicator used in electronic device manufacturing apparatus and method for designing and/or managing the apparatus |
JP2016108371A (ja) * | 2014-12-02 | 2016-06-20 | 株式会社サクラクレパス | プラズマ処理検知インキ組成物及びそれを用いたプラズマ処理検知インジケータ |
JP2018184310A (ja) * | 2017-04-24 | 2018-11-22 | 株式会社サクラクレパス | プラズマインジケータ |
JP2018193514A (ja) * | 2017-05-22 | 2018-12-06 | 株式会社サクラクレパス | プラズマ処理検知用組成物及びそれを用いたプラズマ処理検知インジケータ |
US10180392B2 (en) | 2014-05-09 | 2019-01-15 | Sakura Color Products Corporation | Plasma processing detection indicator using inorganic substance as a color-change layer |
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JP2019200891A (ja) * | 2018-05-15 | 2019-11-21 | 株式会社サクラクレパス | プラズマインジケータ |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6548042B2 (ja) * | 2016-12-15 | 2019-07-24 | 三菱重工機械システム株式会社 | 成膜判定装置、成膜判定方法、および成膜判定システム |
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WO2020027345A1 (ja) * | 2019-08-29 | 2020-02-06 | 株式会社 イアス | 金属微粒子の分析方法および誘導結合プラズマ質量分析方法 |
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002323451A (ja) * | 2001-04-26 | 2002-11-08 | Osao Kobayashi | 滅菌インジケータ組成物 |
JP2005142287A (ja) * | 2003-11-05 | 2005-06-02 | Sakura Color Prod Corp | 通電変色性電気回路板 |
JP2012078202A (ja) * | 2010-10-01 | 2012-04-19 | Sakura Color Products Corp | 過酸化水素滅菌又は過酸化水素プラズマ滅菌検知インジケーター |
JP2013098196A (ja) * | 2011-10-28 | 2013-05-20 | Sakura Color Products Corp | プラズマ処理検知用インキ組成物及びプラズマ処理検知インジケーター |
WO2013129473A1 (ja) * | 2012-02-29 | 2013-09-06 | 日油技研工業株式会社 | 過酸化物検知インジケータ |
JP2013177550A (ja) * | 2012-02-06 | 2013-09-09 | Seiko Epson Corp | インク組成物、インクセット、記録装置、及び記録物 |
JP2014109523A (ja) * | 2012-12-03 | 2014-06-12 | Sakura Color Products Corp | 過酸化水素ガス検知用インキ組成物及び過酸化水素ガス検知インジケーター |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU2003221061A1 (en) * | 2003-03-31 | 2004-10-25 | Fujimori Kogyo Co., Ltd. | Indicator for plasma sterilization and packaging material for sterilization |
KR101655144B1 (ko) * | 2008-06-04 | 2016-09-07 | 지 파텔 | 금속의 에칭에 기초한 모니터링 시스템 |
CN101856504B (zh) * | 2010-07-06 | 2013-06-19 | 成都老肯科技股份有限公司 | 一种用于过氧化氢等离子体灭菌器的灭菌效果检测装置 |
-
2014
- 2014-12-02 JP JP2014244416A patent/JP2016111063A/ja active Pending
-
2015
- 2015-11-24 US US15/529,404 patent/US20170330777A1/en not_active Abandoned
- 2015-11-24 KR KR1020177013404A patent/KR20170091092A/ko not_active Application Discontinuation
- 2015-11-24 WO PCT/JP2015/082818 patent/WO2016088590A1/ja active Application Filing
- 2015-11-24 CN CN201580063223.5A patent/CN107078053B/zh not_active Expired - Fee Related
- 2015-11-27 TW TW104139747A patent/TW201633401A/zh unknown
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002323451A (ja) * | 2001-04-26 | 2002-11-08 | Osao Kobayashi | 滅菌インジケータ組成物 |
JP2005142287A (ja) * | 2003-11-05 | 2005-06-02 | Sakura Color Prod Corp | 通電変色性電気回路板 |
JP2012078202A (ja) * | 2010-10-01 | 2012-04-19 | Sakura Color Products Corp | 過酸化水素滅菌又は過酸化水素プラズマ滅菌検知インジケーター |
JP2013098196A (ja) * | 2011-10-28 | 2013-05-20 | Sakura Color Products Corp | プラズマ処理検知用インキ組成物及びプラズマ処理検知インジケーター |
JP2013177550A (ja) * | 2012-02-06 | 2013-09-09 | Seiko Epson Corp | インク組成物、インクセット、記録装置、及び記録物 |
WO2013129473A1 (ja) * | 2012-02-29 | 2013-09-06 | 日油技研工業株式会社 | 過酸化物検知インジケータ |
JP2014109523A (ja) * | 2012-12-03 | 2014-06-12 | Sakura Color Products Corp | 過酸化水素ガス検知用インキ組成物及び過酸化水素ガス検知インジケーター |
Cited By (12)
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US20160141192A1 (en) | 2013-08-22 | 2016-05-19 | Sakura Color Products Corporation | Indicator used in electronic device manufacturing apparatus and method for designing and/or managing the apparatus |
US10181414B2 (en) | 2013-08-22 | 2019-01-15 | Sakura Color Products Corporation | Indicator used in electronic device manufacturing apparatus and method for designing and/or managing the apparatus |
US10401338B2 (en) | 2014-02-14 | 2019-09-03 | Sakura Color Products Corporation | Plasma processing detection indicator |
US10184058B2 (en) | 2014-04-21 | 2019-01-22 | Sakura Color Products Corporation | Ink composition for detecting plasma treatment and indicator for detecting plasma treatment |
US10180392B2 (en) | 2014-05-09 | 2019-01-15 | Sakura Color Products Corporation | Plasma processing detection indicator using inorganic substance as a color-change layer |
US10400125B2 (en) | 2014-09-16 | 2019-09-03 | Sakura Color Products Corporation | Ink composition for plasma treatment detection, and plasma treatment detection indicator |
JP2016108371A (ja) * | 2014-12-02 | 2016-06-20 | 株式会社サクラクレパス | プラズマ処理検知インキ組成物及びそれを用いたプラズマ処理検知インジケータ |
US10180413B2 (en) | 2014-12-02 | 2019-01-15 | Sakura Color Products Corporation | Ink composition for plasma processing detection, and indicator for plasma processing detection using said ink composition |
JP2018184310A (ja) * | 2017-04-24 | 2018-11-22 | 株式会社サクラクレパス | プラズマインジケータ |
JP2018193514A (ja) * | 2017-05-22 | 2018-12-06 | 株式会社サクラクレパス | プラズマ処理検知用組成物及びそれを用いたプラズマ処理検知インジケータ |
JP2019200891A (ja) * | 2018-05-15 | 2019-11-21 | 株式会社サクラクレパス | プラズマインジケータ |
JP7043066B2 (ja) | 2018-05-15 | 2022-03-29 | 株式会社サクラクレパス | プラズマインジケータ |
Also Published As
Publication number | Publication date |
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US20170330777A1 (en) | 2017-11-16 |
CN107078053A (zh) | 2017-08-18 |
KR20170091092A (ko) | 2017-08-08 |
TW201633401A (zh) | 2016-09-16 |
CN107078053B (zh) | 2021-02-26 |
WO2016088590A1 (ja) | 2016-06-09 |
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