JP2016066819A - Ledディスプレイ及びその製造方法 - Google Patents
Ledディスプレイ及びその製造方法 Download PDFInfo
- Publication number
- JP2016066819A JP2016066819A JP2015255398A JP2015255398A JP2016066819A JP 2016066819 A JP2016066819 A JP 2016066819A JP 2015255398 A JP2015255398 A JP 2015255398A JP 2015255398 A JP2015255398 A JP 2015255398A JP 2016066819 A JP2016066819 A JP 2016066819A
- Authority
- JP
- Japan
- Prior art keywords
- led chip
- subpixel
- wavelength conversion
- conversion layer
- led
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 78
- 239000012790 adhesive layer Substances 0.000 claims abstract description 45
- 239000010410 layer Substances 0.000 claims description 70
- 238000006243 chemical reaction Methods 0.000 claims description 65
- 239000005022 packaging material Substances 0.000 claims description 14
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 229920002050 silicone resin Polymers 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 9
- 239000000463 material Substances 0.000 description 15
- 239000011521 glass Substances 0.000 description 5
- 239000004033 plastic Substances 0.000 description 5
- 239000002390 adhesive tape Substances 0.000 description 4
- 230000036632 reaction speed Effects 0.000 description 4
- 229920001187 thermosetting polymer Polymers 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000001723 curing Methods 0.000 description 2
- 238000000016 photochemical curing Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000004831 Hot glue Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012943 hotmelt Substances 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68354—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (4)
- 第1の透明基板と、
前記第1の透明基板の上に形成された複数のピクセルであって、該ピクセルの各々は、
遮光構造によってそれぞれ包囲されている第1のサブピクセル、第2のサブピクセル及び第3のサブピクセルと、
前記第1のサブピクセル内に形成された第1の波長変換層と、
前記第2のサブピクセル内に形成された第2の波長変換層と、
前記第3のサブピクセル内に形成された第3の波長変換層と、
前記第1の波長変換層、前記第2の波長変換層及び前記第3の波長変換層の上に配置された接着層と、
前記第1のサブピクセル、前記第2のサブピクセル及び前記第3のサブピクセルにおいてそれぞれ前記接着層の上に配置された第1のLEDチップ、第2のLEDチップ及び第3のLEDチップと、
を備える、複数のピクセルと、
前記ピクセルの各々の前記第1のサブピクセル、前記第2のサブピクセル及び前記第3のサブピクセル内に充填されたパッケージング材料であって、シリコーン又はエポキシ樹脂であるパッケージング材料と、
前記第1の透明基板に対向しかつ平行である第2の透明基板であって、前記パッケージング材料によって前記第1のLEDチップ、前記第2のLEDチップ及び前記第3のLEDチップに接合される、第2の透明基板と、
を備えるLEDディスプレイ。 - 前記ピクセルの各々の長さ及び幅は200μm以下である、請求項1に記載のLEDディスプレイ。
- 前記LEDチップの各々の長さ及び幅は60μm以下である、請求項1又は2に記載のLEDディスプレイ。
- 前記第1のLEDチップ、前記第2のLEDチップ及び前記第3のLEDチップはUV
LEDチップであり、前記第1の波長変換層、前記第2の波長変換層及び前記第3の波長変換層は、UV光によって励起され、赤色光、緑色光及び青色光をそれぞれ放出することができる蛍光層であるか、又は、前記複数の第1のLEDチップ、第2のLEDチップ及び第3のLEDチップは青色光LEDチップであり、前記第1の波長変換層、前記第2の波長変換層及び前記第3の波長変換層は、青色光によって励起され、赤色光、緑色光及び青色光をそれぞれ放出することができる蛍光層である、請求項1〜3のいずれか一項に記載のLEDディスプレイ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW102113992 | 2013-04-19 | ||
TW102113992A TWI594661B (zh) | 2013-04-19 | 2013-04-19 | 發光二極體顯示器及其製造方法 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014084950A Division JP5922698B2 (ja) | 2013-04-19 | 2014-04-16 | Ledディスプレイ及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016066819A true JP2016066819A (ja) | 2016-04-28 |
JP6069479B2 JP6069479B2 (ja) | 2017-02-01 |
Family
ID=51728356
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014084950A Active JP5922698B2 (ja) | 2013-04-19 | 2014-04-16 | Ledディスプレイ及びその製造方法 |
JP2015255398A Active JP6069479B2 (ja) | 2013-04-19 | 2015-12-25 | Ledディスプレイ及びその製造方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014084950A Active JP5922698B2 (ja) | 2013-04-19 | 2014-04-16 | Ledディスプレイ及びその製造方法 |
Country Status (3)
Country | Link |
---|---|
US (3) | US9472733B2 (ja) |
JP (2) | JP5922698B2 (ja) |
TW (1) | TWI594661B (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018003027A1 (ja) * | 2016-06-29 | 2018-01-04 | 三菱電機株式会社 | 表示装置および表示装置の製造方法 |
JP2019220502A (ja) * | 2018-06-15 | 2019-12-26 | 東芝ホクト電子株式会社 | 発光モジュールおよび発光モジュールの製造方法 |
KR20210011136A (ko) * | 2019-07-22 | 2021-02-01 | (주)라이타이저 | 디스플레이 장치의 제조 방법 및 디스플레이 장치 |
Families Citing this family (66)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI594661B (zh) * | 2013-04-19 | 2017-08-01 | 隆達電子股份有限公司 | 發光二極體顯示器及其製造方法 |
US9930750B2 (en) * | 2014-08-20 | 2018-03-27 | Lumens Co., Ltd. | Method for manufacturing light-emitting device packages, light-emitting device package strip, and light-emitting device package |
US10193012B2 (en) | 2015-05-21 | 2019-01-29 | Goertek, Inc. | Transferring method, manufacturing method, device and electronic apparatus of micro-LED |
US10319697B2 (en) | 2015-05-21 | 2019-06-11 | Goertek, Inc. | Transferring method, manufacturing method, device and electronic apparatus of micro-LED |
EP3218938B1 (en) * | 2015-08-18 | 2020-09-30 | Weifang Goertek Microelectronics Co., Ltd. | Repairing method and manufacturing method of micro-led |
US10170455B2 (en) * | 2015-09-04 | 2019-01-01 | PlayNitride Inc. | Light emitting device with buffer pads |
TWI581460B (zh) * | 2015-09-04 | 2017-05-01 | 錼創科技股份有限公司 | 發光元件及其製作方法 |
JP6612565B2 (ja) * | 2015-09-11 | 2019-11-27 | アルパッド株式会社 | ディスプレイパネル、表示装置およびディスプレイパネルの製造方法 |
KR102546307B1 (ko) | 2015-12-02 | 2023-06-21 | 삼성전자주식회사 | 발광 소자 및 이를 포함하는 표시 장치 |
WO2017127023A1 (en) | 2016-01-20 | 2017-07-27 | Heptagon Micro Optics Pte. Ltd. | Optoelectronic modules having fluid permeable channels and methods for manufacturing the same |
KR102407777B1 (ko) | 2016-02-04 | 2022-06-10 | 에피스타 코포레이션 | 발광소자 및 그의 제조방법 |
KR102471687B1 (ko) * | 2016-02-26 | 2022-11-28 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광모듈 및 표시장치 |
JP2017157724A (ja) * | 2016-03-02 | 2017-09-07 | デクセリアルズ株式会社 | 表示装置及びその製造方法、並びに発光装置及びその製造方法 |
KR20170102782A (ko) | 2016-03-02 | 2017-09-12 | 엘지이노텍 주식회사 | 발광 모듈 및 표시장치 |
KR102464931B1 (ko) * | 2016-03-28 | 2022-11-09 | 삼성전자주식회사 | Led 장치 및 그 제조 방법 |
US10211384B2 (en) | 2016-03-28 | 2019-02-19 | Samsung Electronics Co., Ltd. | Light emitting diode apparatus and manufacturing method thereof |
US10535572B2 (en) * | 2016-04-15 | 2020-01-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Device arrangement structure assembly and test method |
CN105895573B (zh) * | 2016-04-18 | 2018-09-04 | 京东方科技集团股份有限公司 | 柔性基板的剥离方法 |
CN107464859A (zh) * | 2016-06-03 | 2017-12-12 | 光宝光电(常州)有限公司 | 发光二极管结构、组件及其制造方法 |
KR102553630B1 (ko) | 2016-08-11 | 2023-07-10 | 삼성전자주식회사 | 발광소자 패키지 및 이를 이용한 디스플레이 장치 |
KR102019252B1 (ko) * | 2016-09-15 | 2019-11-14 | 일룩스 아이엔씨. | 광 관리 시스템을 구비하는 발광 디스플레이 |
WO2018070666A1 (ko) * | 2016-10-11 | 2018-04-19 | 주식회사 루멘스 | Led 디스플레이 모듈 및 그 제조방법 |
WO2018084446A1 (en) * | 2016-11-01 | 2018-05-11 | Lg Electronics Inc. | Transparent light-emitting diode film |
TWI609483B (zh) * | 2016-11-23 | 2017-12-21 | Wafer level microdisplay and active projector applying the wafer level microdisplay | |
US10978530B2 (en) * | 2016-11-25 | 2021-04-13 | Vuereal Inc. | Integration of microdevices into system substrate |
US10998352B2 (en) | 2016-11-25 | 2021-05-04 | Vuereal Inc. | Integration of microdevices into system substrate |
TWI619269B (zh) * | 2016-12-02 | 2018-03-21 | 王仁宏 | 發光二極體封裝結構 |
KR101947643B1 (ko) * | 2016-12-02 | 2019-02-13 | 엘지전자 주식회사 | 반도체 발광소자를 이용한 디스플레이 장치 |
CN106783648B (zh) * | 2016-12-28 | 2019-01-25 | 歌尔股份有限公司 | 一种led显示屏的制备方法 |
US10923635B2 (en) * | 2016-12-30 | 2021-02-16 | Lumileds Llc | Phosphor deposition system for LEDs |
TWI663724B (zh) * | 2017-01-26 | 2019-06-21 | 宏碁股份有限公司 | 發光二極體顯示器及其製造方法 |
TWI646651B (zh) | 2017-01-26 | 2019-01-01 | 宏碁股份有限公司 | 發光二極體顯示器及其製造方法 |
KR102399464B1 (ko) * | 2017-06-27 | 2022-05-19 | 주식회사 루멘스 | 엘이디 패널 |
US10353243B2 (en) * | 2017-08-01 | 2019-07-16 | Innolux Corporation | Display device |
CN109390437B (zh) * | 2017-08-08 | 2021-06-15 | 英属开曼群岛商錼创科技股份有限公司 | 微型发光二极管装置及其制作方法 |
CN109378365B (zh) * | 2017-08-08 | 2021-09-14 | 英属开曼群岛商錼创科技股份有限公司 | 微型发光二极管装置及其制作方法 |
US11302842B2 (en) | 2017-08-08 | 2022-04-12 | PlayNitride Inc. | Micro light emitting diode device and manufacturing method thereof |
US10186549B1 (en) * | 2017-09-20 | 2019-01-22 | Asm Technology Singapore Pte Ltd | Gang bonding process for assembling a matrix of light-emitting elements |
CN109728141B (zh) | 2017-10-27 | 2021-02-23 | 隆达电子股份有限公司 | 像素结构 |
DE102017129326B4 (de) * | 2017-12-08 | 2022-04-28 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung von Halbleiterlichtquellen |
KR101890582B1 (ko) * | 2017-12-14 | 2018-08-22 | 엘지디스플레이 주식회사 | 발광 다이오드 칩, 마이크로 디스플레이 장치 |
TWI642047B (zh) * | 2018-01-26 | 2018-11-21 | 鼎展電子股份有限公司 | 可撓性微發光二極體顯示模組 |
TWI645394B (zh) * | 2018-02-06 | 2018-12-21 | 友達光電股份有限公司 | 顯示裝置及其驅動方法 |
TWI665797B (zh) * | 2018-02-14 | 2019-07-11 | 同泰電子科技股份有限公司 | 微發光二極體模組及其製法 |
CN108987382A (zh) * | 2018-07-27 | 2018-12-11 | 京东方科技集团股份有限公司 | 一种电致发光器件及其制作方法 |
JP2020043140A (ja) * | 2018-09-06 | 2020-03-19 | 株式会社ブイ・テクノロジー | Led表示パネルの製造方法及びled表示パネル |
US11664363B2 (en) * | 2018-10-17 | 2023-05-30 | Seoul Viosys Co., Ltd. | Light emitting device and method of manufacturing the same |
US11145251B2 (en) * | 2018-10-23 | 2021-10-12 | Innolux Corporation | Display device |
US11688710B2 (en) * | 2019-03-25 | 2023-06-27 | Innolux Corporation | Electronic device |
US11355686B2 (en) * | 2019-03-29 | 2022-06-07 | Seoul Semiconductor Co., Ltd. | Unit pixel having light emitting device, pixel module and displaying apparatus |
TWI753288B (zh) * | 2019-08-23 | 2022-01-21 | 李家銘 | 具有遮光膜的rgb發光二極體模組 |
CN112447897A (zh) * | 2019-09-03 | 2021-03-05 | 李家铭 | 具有遮光膜的rgb发光二极管模块 |
TWI779242B (zh) | 2019-10-28 | 2022-10-01 | 錼創顯示科技股份有限公司 | 微型發光二極體裝置 |
US11489002B2 (en) * | 2019-10-29 | 2022-11-01 | Seoul Viosys Co., Ltd. | LED display apparatus |
CN110854057B (zh) * | 2019-11-14 | 2022-07-12 | 京东方科技集团股份有限公司 | 一种转移基板及其制作方法、转移方法 |
CN211555890U (zh) * | 2019-12-02 | 2020-09-22 | 深圳市绎立锐光科技开发有限公司 | Led显示装置 |
KR102465730B1 (ko) * | 2020-03-06 | 2022-11-14 | 웨이브로드 주식회사 | 반도체 발광소자 및 이를 제조하는 방법 |
CN113130348B (zh) * | 2019-12-31 | 2022-12-09 | Tcl科技集团股份有限公司 | Led芯片转移方法 |
TWI766234B (zh) * | 2020-02-10 | 2022-06-01 | 台灣愛司帝科技股份有限公司 | 發光二極體晶片封裝結構及其製作方法 |
US11810904B2 (en) * | 2020-02-24 | 2023-11-07 | PlayNitride Display Co., Ltd. | Micro light emitting diode structure and manufacturing method thereof and micro light emitting diode device |
CN113937122B (zh) * | 2020-07-14 | 2022-10-21 | 重庆康佳光电技术研究院有限公司 | Led显示面板及制备方法、电子设备 |
TWI779552B (zh) * | 2021-04-08 | 2022-10-01 | 友達光電股份有限公司 | 顯示裝置 |
FR3123499A1 (fr) * | 2021-05-31 | 2022-12-02 | Aledia | Procédé de fabrication d’un dispositif électronique comprenant une phase de liaison |
CN113611786B (zh) * | 2021-08-02 | 2022-09-27 | 东莞市中麒光电技术有限公司 | 剥离良率高且方便倒膜的led芯片巨量转移方法 |
CN114050170A (zh) * | 2021-08-19 | 2022-02-15 | 重庆康佳光电技术研究院有限公司 | 显示面板及其制造方法 |
TWI812015B (zh) * | 2022-02-16 | 2023-08-11 | 友達光電股份有限公司 | 發光二極體顯示裝置及其製造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008034487A (ja) * | 2006-07-26 | 2008-02-14 | Matsushita Electric Works Ltd | 発光装置 |
WO2009069671A1 (ja) * | 2007-11-29 | 2009-06-04 | Nichia Corporation | 発光装置及びその製造方法 |
WO2012136421A1 (de) * | 2011-04-07 | 2012-10-11 | Osram Opto Semiconductors Gmbh | Anzeigevorrichtung |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6212213B1 (en) * | 1999-01-29 | 2001-04-03 | Agilent Technologies, Inc. | Projector light source utilizing a solid state green light source |
US6696703B2 (en) * | 1999-09-27 | 2004-02-24 | Lumileds Lighting U.S., Llc | Thin film phosphor-converted light emitting diode device |
KR100764377B1 (ko) | 2006-04-17 | 2007-10-08 | 삼성전기주식회사 | 엣지형 백라이트 유닛 |
CN101599442A (zh) | 2008-06-04 | 2009-12-09 | 富准精密工业(深圳)有限公司 | 发光二极管的制造方法 |
US9293667B2 (en) * | 2010-08-19 | 2016-03-22 | Soraa, Inc. | System and method for selected pump LEDs with multiple phosphors |
US8642363B2 (en) * | 2009-12-09 | 2014-02-04 | Nano And Advanced Materials Institute Limited | Monolithic full-color LED micro-display on an active matrix panel manufactured using flip-chip technology |
KR20130066637A (ko) * | 2010-05-27 | 2013-06-20 | 오스람 실바니아 인코포레이티드 | 질화물 발광 다이오드들 전부를 포함하는 발광 다이오드 광원 |
JP2013037138A (ja) | 2011-08-05 | 2013-02-21 | Panasonic Corp | 自発光型表示装置 |
JP2014224836A (ja) * | 2011-09-16 | 2014-12-04 | シャープ株式会社 | 発光デバイス、表示装置、照明装置および発電装置 |
TWI594661B (zh) * | 2013-04-19 | 2017-08-01 | 隆達電子股份有限公司 | 發光二極體顯示器及其製造方法 |
-
2013
- 2013-04-19 TW TW102113992A patent/TWI594661B/zh active
-
2014
- 2014-03-19 US US14/219,035 patent/US9472733B2/en active Active
- 2014-04-16 JP JP2014084950A patent/JP5922698B2/ja active Active
-
2015
- 2015-12-04 US US14/959,026 patent/US9484506B2/en active Active
- 2015-12-25 JP JP2015255398A patent/JP6069479B2/ja active Active
-
2016
- 2016-09-30 US US15/281,229 patent/US9818915B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008034487A (ja) * | 2006-07-26 | 2008-02-14 | Matsushita Electric Works Ltd | 発光装置 |
WO2009069671A1 (ja) * | 2007-11-29 | 2009-06-04 | Nichia Corporation | 発光装置及びその製造方法 |
WO2012136421A1 (de) * | 2011-04-07 | 2012-10-11 | Osram Opto Semiconductors Gmbh | Anzeigevorrichtung |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018003027A1 (ja) * | 2016-06-29 | 2018-01-04 | 三菱電機株式会社 | 表示装置および表示装置の製造方法 |
JPWO2018003027A1 (ja) * | 2016-06-29 | 2018-10-18 | 三菱電機株式会社 | 表示装置および表示装置の製造方法 |
JP2019220502A (ja) * | 2018-06-15 | 2019-12-26 | 東芝ホクト電子株式会社 | 発光モジュールおよび発光モジュールの製造方法 |
JP7273280B2 (ja) | 2018-06-15 | 2023-05-15 | 日亜化学工業株式会社 | 発光モジュールおよび発光モジュールの製造方法 |
KR20210011136A (ko) * | 2019-07-22 | 2021-02-01 | (주)라이타이저 | 디스플레이 장치의 제조 방법 및 디스플레이 장치 |
KR102210152B1 (ko) | 2019-07-22 | 2021-02-02 | (주)라이타이저 | 디스플레이 장치의 제조 방법 및 디스플레이 장치 |
Also Published As
Publication number | Publication date |
---|---|
US20140312368A1 (en) | 2014-10-23 |
US9472733B2 (en) | 2016-10-18 |
JP2014212320A (ja) | 2014-11-13 |
JP6069479B2 (ja) | 2017-02-01 |
US9818915B2 (en) | 2017-11-14 |
TWI594661B (zh) | 2017-08-01 |
JP5922698B2 (ja) | 2016-05-24 |
TW201442559A (zh) | 2014-11-01 |
US20160087165A1 (en) | 2016-03-24 |
US9484506B2 (en) | 2016-11-01 |
US20170018691A1 (en) | 2017-01-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6069479B2 (ja) | Ledディスプレイ及びその製造方法 | |
KR102132220B1 (ko) | 양자점 광학 소자의 제조 방법 및 양자점 광학 소자를 포함한 백라이트 유닛 | |
US20160066463A1 (en) | Curved electronic device | |
US9076985B2 (en) | Display device and method for producing the same | |
WO2021007998A1 (zh) | 显示面板、显示模组及显示装置 | |
CN103794628A (zh) | 有机发光显示装置及其制造方法 | |
TW201310137A (zh) | 光學構件及具有其之顯示裝置 | |
EP3799139B1 (en) | Display device | |
KR20090015303A (ko) | 발광표시장치 및 그의 제조방법 | |
US20210327861A1 (en) | Light emitting diode package structure and manufacturing method thereof | |
KR20210006241A (ko) | 마이크로 led 그룹 기판 및 이의 제조 방법 및 마이크로 led 디스플레이 패널 및 이의 제조 방법 | |
KR101055037B1 (ko) | 라이트 유닛 및 이를 구비한 디스플레이 장치 | |
CN113764477A (zh) | 显示装置 | |
JP6462440B2 (ja) | 表示装置及び表示装置の製造方法 | |
CN1967899A (zh) | 有机电致发光显示元件及其制造方法 | |
JP2010107935A (ja) | 平板表示装置及びその製造方法 | |
KR20110022970A (ko) | 표시장치 | |
CN103943785A (zh) | 光学调节膜及其制造方法 | |
JP6348012B2 (ja) | 表示装置 | |
KR100979422B1 (ko) | 평판표시장치 및 그의 제조방법 | |
KR101498408B1 (ko) | 면상 발광체 | |
KR20150142603A (ko) | 표시 장치 | |
CN113168045B (zh) | 显示面板及其制备方法 | |
KR20080092719A (ko) | 발광소자와 그의 제조 방법 | |
KR20090087701A (ko) | 유기 발광 다이오드의 제조 방법 및 이를 이용한 유기 발광다이오드 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20161012 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20161129 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20161226 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6069479 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |