JP2016047958A - 酸素ラジカル生成を促進するためのcf4を用いたラジカル強化原子層蒸着 - Google Patents
酸素ラジカル生成を促進するためのcf4を用いたラジカル強化原子層蒸着 Download PDFInfo
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Abstract
【解決手段】反応チャンバ20の内部に存在する基板142の表面においてラジカル強化原子層蒸着(RE−ALD)処理を実行する方法であって、CF4ガス及びO2ガスのガス混合物112を供給する工程と、ガス混合物からプラズマを形成し、ガス混合物中112にCF4ガスが存在しない場合よりも速い速度で酸素ラジカルを生成する工程と、反応チャンバ20の内部に酸素ラジカル及び前駆体ガス116を連続的に供給し、基板142の表面に金属有機前駆体よりなる金属酸化膜を形成する工程とを備え、CF4ガスは、0.1容量%から10容量%の範囲内の濃度で存在する方法。
【選択図】図1
Description
したがって、例えば、前駆体ガス52は以下のものを含む。
・Si−トリス(ジメチルアミノ)シラン
・Al−トリメチルアルミニウム
・Hf−テトラキス(ジメチルアミド)ハフニウム
・Ti−四塩化チタン
・Zr−テトラキス(ジメチルアミド)ジルコニウム
・Ta−ペンタキス(ジメチルアミド)タンタル
・Yt−トリス(2,2,6,6−テトラメチル−3,5−ヘプタンジオナト)イットリウム
・Mg−エチルシクロペンタジエニル(マグネシウム)
Claims (20)
- 反応チャンバの内部に存在する基板の表面においてラジカル強化原子層蒸着(RE−ALD)処理を実行する方法であって、
CF4ガス及びO2ガスのガス混合物を供給する工程と、
前記ガス混合物からプラズマを形成し、前記ガス混合物中にCF4ガスが存在しない場合よりも速い速度で酸素ラジカルを生成する工程と、
前記反応チャンバの内部に酸素ラジカル及び前駆体ガスを連続的に供給し、前記基板の表面に酸化膜を形成する工程と
を備え、
前記CF4ガスは、0.1容量%から10容量%の範囲内の濃度で存在する方法。 - 前記プラズマは、前記反応チャンバの内部に空気圧で接続されるプラズマチューブ内に形成される、請求項1に記載の方法。
- 前記前駆体ガスは、金属有機前駆体を含む、請求項1または2に記載の方法。
- 前記金属有機前駆体は、ケイ素、アルミニウム、ハフニウム、チタニウム、ジルコニウム、タンタル、イットリウム及びマグネシウムよりなる群から選択される、請求項3に記載の方法。
- 前記酸化膜は金属酸化物を含む、請求項1から4の何れか1項に記載の方法。
- 前記金属酸化物は、Al2O3、B2O3、CeO2、Co3O4、Cr2O3、CuOX、Er2O3、FeOX、Ga2O3、Gd2O3、HfO2、IrO2、La2O3、MgO、Nb2O5、NiOX、PtO2、RuO2、SiO2、SnO2、SrOX、Ta2O5、TiO2、Tm2O3、V2O5、Y2O3、ZnO、及びZrO2よりなる群から選択される、請求項5に記載の方法。
- 前記反応チャンバの内部にパージガスを導入して、前記酸素ラジカルまたは前記前駆体ガスの何れかを含む前記反応チャンバの内部を清浄化することを補助することをさらに備える、請求項1から6の何れか1項に記載の方法。
- 前記基板はシリコンウエハを含む、請求項1から7の何れか1項に記載の方法。
- 反応チャンバの内部に存在する基板の表面においてラジカル強化原子層蒸着(RE−ALD)処理を実行する方法であって、
プラズマチューブ内でガス混合物から酸素プラズマを形成することによって、酸素ラジカルO*を含む第1の前駆体ガスを供給する工程と、
前記反応チャンバの内部に空気圧で接続されたガス源から第2の前駆体ガスを供給する工程と、
前記反応チャンバの内部に前記第1の前駆体ガス及び前記第2の前駆体ガスを連続的に供給し、前記基板の表面に酸化膜を形成する工程と
を備え、
前記第1の前駆体ガスを供給する工程では、前記プラズマチューブは前記反応チャンバの内部に空気圧で接続され、かつ、前記ガス混合物は、CF4ガス及びO2ガスで構成され、前記CF4ガスは、0.1容量%から10容量%の濃度を有する、方法。 - 前記第1の前駆体ガス及び前記第2の前駆体ガスの一方は、ケイ素、アルミニウム、ハフニウム、チタニウム、ジルコニウム、タンタル、イットリウム及びマグネシウムの少なくとも一つを含む、請求項9に記載の方法。
- 前記酸化膜は、SiO2、Al2O3、HfO2、TiO2、ZrO2、Ta2O5、Y2O3及びMgOのうちの一つを含む、請求項9または10に記載の方法。
- 前記反応チャンバの内部にパージガスを導入して、前記第1の前駆体ガスまたは前記第2の前駆体ガスを含む前記反応チャンバの内部を清浄化することを補助する工程をさらに備える、請求項9から11の何れか1項に記載の方法。
- 前記基板はシリコンウエハを含む、請求項9から12の何れか1項に記載の方法。
- 前記プラズマチューブは石英で形成されている、請求項9から13の何れか1項に記載の方法。
- 前記酸素プラズマを形成することは、前記プラズマチューブ内の前記ガス混合物を誘導結合させることを含む、請求項9から14の何れか1項に記載の方法。
- 基板の表面においてラジカル強化原子層蒸着(RE−ALD)処理を実行するシステムであって、
反応チャンバと、ガス源と、プラズマシステムと、真空ポンプと、制御部とを備え、
前記反応チャンバは前記基板を支持するように構成された内部を有し、
前記ガス源は、前記反応チャンバの内部に空気圧で接続され、CF4及びO2で構成されるガス混合物を含み、前記CF4は、前記ガス混合物中で0.1容量%から10容量%の濃度を有し、
前記プラズマシステムは、前記反応チャンバの内部に空気圧で接続され、前記ガス混合物からプラズマを形成し、前記プラズマは、前記ガス混合物がCF4を含まない場合よりも速い速度で酸素ラジカルO*を生成するように構成され、
前記真空ポンプは、前記反応チャンバの内部に空気圧で接続され、
前記制御部は、前記プラズマシステム、前記真空ポンプ、及び前記ガス源に操作可能に接続され、前記制御部は、前記反応チャンバの内部に、前記酸素ラジカル及び前記前駆体ガスを連続的に導入して、前記基板の表面に酸化膜を形成するように構成される、システム。 - 前記前駆体ガスは、ケイ素、アルミニウム、ハフニウム、チタニウム、ジルコニウム、タンタル、イットリウム及びマグネシウムのうちの一つを含む、請求項16に記載のシステム。
- 前記プラズマシステムは、誘導的に接続されたプラズマ源を含む、請求項16または17に記載のシステム。
- 前記基板をさらに備え、前記基板はケイ素を含む、請求項16から18の何れか1項に記載のシステム。
- 前記ガス源は、操作可能に接続された第1のガス源及び第2のガス源を含み、
前記第1のガス源はO2ガスを含み、前記第2のガス源はCF4ガスを含む、
請求項16から19の何れか1項に記載のシステム。
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- 2015-06-23 JP JP2015125302A patent/JP6042493B2/ja not_active Expired - Fee Related
- 2015-07-10 KR KR1020150098661A patent/KR20160025444A/ko unknown
- 2015-08-27 CN CN201510534891.3A patent/CN105386010A/zh active Pending
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CN105386010A (zh) | 2016-03-09 |
US20160064208A1 (en) | 2016-03-03 |
KR20160025444A (ko) | 2016-03-08 |
US9318319B2 (en) | 2016-04-19 |
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