JP2016040829A - 炭素含有酸化ケイ素膜、封止膜及びその用途 - Google Patents
炭素含有酸化ケイ素膜、封止膜及びその用途 Download PDFInfo
- Publication number
- JP2016040829A JP2016040829A JP2015175031A JP2015175031A JP2016040829A JP 2016040829 A JP2016040829 A JP 2016040829A JP 2015175031 A JP2015175031 A JP 2015175031A JP 2015175031 A JP2015175031 A JP 2015175031A JP 2016040829 A JP2016040829 A JP 2016040829A
- Authority
- JP
- Japan
- Prior art keywords
- methoxymethyl
- tris
- bis
- silane
- tetrakis
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 44
- 229910052799 carbon Inorganic materials 0.000 title claims abstract description 41
- 229910052814 silicon oxide Inorganic materials 0.000 title claims abstract description 35
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 34
- 238000007789 sealing Methods 0.000 title claims description 46
- 239000007789 gas Substances 0.000 claims abstract description 62
- 239000002994 raw material Substances 0.000 claims abstract description 40
- 238000000034 method Methods 0.000 claims abstract description 33
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 28
- 230000004888 barrier function Effects 0.000 claims abstract description 26
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 13
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims abstract description 11
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 8
- 150000003377 silicon compounds Chemical class 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims abstract description 6
- 239000007983 Tris buffer Substances 0.000 claims description 101
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 74
- 230000035699 permeability Effects 0.000 claims description 44
- 150000001875 compounds Chemical class 0.000 claims description 26
- 125000004184 methoxymethyl group Chemical group [H]C([H])([H])OC([H])([H])* 0.000 claims description 26
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 21
- 150000003961 organosilicon compounds Chemical class 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 11
- PMDLXRBKXIOCRW-UHFFFAOYSA-N COC[Si](C)(C)COC Chemical compound COC[Si](C)(C)COC PMDLXRBKXIOCRW-UHFFFAOYSA-N 0.000 claims description 9
- MNVQBCNWLWFTJD-UHFFFAOYSA-N COC[Si](C1CCCCC1)(COC)COC Chemical compound COC[Si](C1CCCCC1)(COC)COC MNVQBCNWLWFTJD-UHFFFAOYSA-N 0.000 claims description 7
- IAYBVZNTFZWEBX-UHFFFAOYSA-N COC[Si](CC)(COC)COC Chemical compound COC[Si](CC)(COC)COC IAYBVZNTFZWEBX-UHFFFAOYSA-N 0.000 claims description 7
- VVEPIWGLAPXYLJ-UHFFFAOYSA-N COC[Si](O[Si](O[Si](OC)(C)COC)(C)COC)(OC)C Chemical compound COC[Si](O[Si](O[Si](OC)(C)COC)(C)COC)(OC)C VVEPIWGLAPXYLJ-UHFFFAOYSA-N 0.000 claims description 7
- AIYCQADUUFIKHX-UHFFFAOYSA-N 2,4,6,8-tetrakis(2-methoxyethyl)-2,4,6,8-tetramethyl-1,3,5,7,2,4,6,8-tetraoxatetrasilocane Chemical compound COCC[Si]1(C)O[Si](C)(CCOC)O[Si](C)(CCOC)O[Si](C)(CCOC)O1 AIYCQADUUFIKHX-UHFFFAOYSA-N 0.000 claims description 5
- 125000005529 alkyleneoxy group Chemical group 0.000 claims description 5
- 238000010894 electron beam technology Methods 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000004050 hot filament vapor deposition Methods 0.000 claims description 5
- WQEWAQFTKKOSJK-UHFFFAOYSA-N methoxymethylsilane Chemical compound COC[SiH3] WQEWAQFTKKOSJK-UHFFFAOYSA-N 0.000 claims description 5
- QAVXGQSHJCUTDF-UHFFFAOYSA-N COC[Si](C(C)C)(COC)COC Chemical compound COC[Si](C(C)C)(COC)COC QAVXGQSHJCUTDF-UHFFFAOYSA-N 0.000 claims description 4
- HKCCUJAMQNBOFW-UHFFFAOYSA-N COC[Si](CC(C)C)(COC)COC Chemical compound COC[Si](CC(C)C)(COC)COC HKCCUJAMQNBOFW-UHFFFAOYSA-N 0.000 claims description 4
- CTKGMZFAZVHLNG-UHFFFAOYSA-N COC[Si](CC)(CC)COC Chemical compound COC[Si](CC)(CC)COC CTKGMZFAZVHLNG-UHFFFAOYSA-N 0.000 claims description 4
- PPNQXAYCPNTVHH-UHFFFAOYSA-N methoxymethyl(trimethyl)silane Chemical compound COC[Si](C)(C)C PPNQXAYCPNTVHH-UHFFFAOYSA-N 0.000 claims description 4
- DNAJDTIOMGISDS-UHFFFAOYSA-N prop-2-enylsilane Chemical compound [SiH3]CC=C DNAJDTIOMGISDS-UHFFFAOYSA-N 0.000 claims description 4
- LNKFUXBEUMITLF-UHFFFAOYSA-N triethyl(methoxymethyl)silane Chemical compound CC[Si](CC)(CC)COC LNKFUXBEUMITLF-UHFFFAOYSA-N 0.000 claims description 4
- ZVLQSHFEWVTADB-UHFFFAOYSA-N C(=C)[Si](COC)(C=C)C=C Chemical compound C(=C)[Si](COC)(C=C)C=C ZVLQSHFEWVTADB-UHFFFAOYSA-N 0.000 claims description 3
- QAXFASIVXPWZHF-UHFFFAOYSA-N C(C(C)C)[Si](COC)(CC(C)C)CC(C)C Chemical compound C(C(C)C)[Si](COC)(CC(C)C)CC(C)C QAXFASIVXPWZHF-UHFFFAOYSA-N 0.000 claims description 3
- SRWWFSFSZQUGRC-UHFFFAOYSA-N C(C)(C)C=C[SiH](COC)COC Chemical compound C(C)(C)C=C[SiH](COC)COC SRWWFSFSZQUGRC-UHFFFAOYSA-N 0.000 claims description 3
- KZWMAXHVYSAMRG-UHFFFAOYSA-N C(C)(C)[Si](COC)(COC)CC Chemical compound C(C)(C)[Si](COC)(COC)CC KZWMAXHVYSAMRG-UHFFFAOYSA-N 0.000 claims description 3
- FQPWGGXADVDCQW-UHFFFAOYSA-N C(C)(CCC)[Si](COC)(C(C)CCC)C(C)CCC Chemical compound C(C)(CCC)[Si](COC)(C(C)CCC)C(C)CCC FQPWGGXADVDCQW-UHFFFAOYSA-N 0.000 claims description 3
- PRVWAIFRCVHQAK-UHFFFAOYSA-N C(CCCC)[Si](COC)(CCCCC)CCCCC Chemical compound C(CCCC)[Si](COC)(CCCCC)CCCCC PRVWAIFRCVHQAK-UHFFFAOYSA-N 0.000 claims description 3
- FWJDLTQEPCODNK-UHFFFAOYSA-N C(CCCCC)[Si](COC)(CCCCCC)CCCCCC Chemical compound C(CCCCC)[Si](COC)(CCCCCC)CCCCCC FWJDLTQEPCODNK-UHFFFAOYSA-N 0.000 claims description 3
- RITYSHPBGZIFJB-UHFFFAOYSA-N C1(CCCC1)[Si](COC)(C1CCCC1)C1CCCC1 Chemical compound C1(CCCC1)[Si](COC)(C1CCCC1)C1CCCC1 RITYSHPBGZIFJB-UHFFFAOYSA-N 0.000 claims description 3
- XWPXDVSUARAAOP-UHFFFAOYSA-N C1(CCCCC1)[Si](COC)(C1CCCCC1)C1CCCCC1 Chemical compound C1(CCCCC1)[Si](COC)(C1CCCCC1)C1CCCCC1 XWPXDVSUARAAOP-UHFFFAOYSA-N 0.000 claims description 3
- IGWNEWPQFHXRHY-UHFFFAOYSA-N COCC[Si](O[Si](OC)(C)CCOC)(OC)C Chemical compound COCC[Si](O[Si](OC)(C)CCOC)(OC)C IGWNEWPQFHXRHY-UHFFFAOYSA-N 0.000 claims description 3
- BKGCJRHPBJOGTA-UHFFFAOYSA-N COCC[Si](O[Si](O[Si](OC)(C)CCOC)(C)CCOC)(OC)C Chemical compound COCC[Si](O[Si](O[Si](OC)(C)CCOC)(C)CCOC)(OC)C BKGCJRHPBJOGTA-UHFFFAOYSA-N 0.000 claims description 3
- FSABDMQELVMORJ-UHFFFAOYSA-N COC[Si](C(C)C)(C(C)C)COC Chemical compound COC[Si](C(C)C)(C(C)C)COC FSABDMQELVMORJ-UHFFFAOYSA-N 0.000 claims description 3
- VBJYOSDRAKGMAP-UHFFFAOYSA-N COC[Si](C(C)CC)(COC)COC Chemical compound COC[Si](C(C)CC)(COC)COC VBJYOSDRAKGMAP-UHFFFAOYSA-N 0.000 claims description 3
- PEBIYWISVFBSAD-UHFFFAOYSA-N COC[Si](C(C)CCC)(C(C)CCC)COC Chemical compound COC[Si](C(C)CCC)(C(C)CCC)COC PEBIYWISVFBSAD-UHFFFAOYSA-N 0.000 claims description 3
- MGWBCTNGQCZHGX-UHFFFAOYSA-N COC[Si](C(C)CCC)(COC)COC Chemical compound COC[Si](C(C)CCC)(COC)COC MGWBCTNGQCZHGX-UHFFFAOYSA-N 0.000 claims description 3
- GZDMINTWZIAGIN-UHFFFAOYSA-N COC[Si](C1=CC=CC=C1)(COC)COC Chemical compound COC[Si](C1=CC=CC=C1)(COC)COC GZDMINTWZIAGIN-UHFFFAOYSA-N 0.000 claims description 3
- UNXRYXOBAOWIJN-UHFFFAOYSA-N COC[Si](C1CCCC1)(C1CCCC1)COC Chemical compound COC[Si](C1CCCC1)(C1CCCC1)COC UNXRYXOBAOWIJN-UHFFFAOYSA-N 0.000 claims description 3
- VRODCRNXXOUBFM-UHFFFAOYSA-N COC[Si](C1CCCC1)(COC)COC Chemical compound COC[Si](C1CCCC1)(COC)COC VRODCRNXXOUBFM-UHFFFAOYSA-N 0.000 claims description 3
- VFSUDLCXAYDFHY-UHFFFAOYSA-N COC[Si](C1CCCCC1)(C1CCCCC1)COC Chemical compound COC[Si](C1CCCCC1)(C1CCCCC1)COC VFSUDLCXAYDFHY-UHFFFAOYSA-N 0.000 claims description 3
- QOQVQQQKNUSQJC-UHFFFAOYSA-N COC[Si](C=C)(C=C)COC Chemical compound COC[Si](C=C)(C=C)COC QOQVQQQKNUSQJC-UHFFFAOYSA-N 0.000 claims description 3
- VMBQCUTXDIPBJY-UHFFFAOYSA-N COC[Si](CCC)(CCC)COC Chemical compound COC[Si](CCC)(CCC)COC VMBQCUTXDIPBJY-UHFFFAOYSA-N 0.000 claims description 3
- IKWAOSNECYSJAQ-UHFFFAOYSA-N COC[Si](CCC)(COC)COC Chemical compound COC[Si](CCC)(COC)COC IKWAOSNECYSJAQ-UHFFFAOYSA-N 0.000 claims description 3
- MWKDBTGQWOQCQU-UHFFFAOYSA-N COC[Si](CCCC)(CCCC)COC Chemical compound COC[Si](CCCC)(CCCC)COC MWKDBTGQWOQCQU-UHFFFAOYSA-N 0.000 claims description 3
- IWAPXTBMICLWDV-UHFFFAOYSA-N COC[Si](CCCC)(COC)COC Chemical compound COC[Si](CCCC)(COC)COC IWAPXTBMICLWDV-UHFFFAOYSA-N 0.000 claims description 3
- SHUIOLIQCRMWLO-UHFFFAOYSA-N COC[Si](CCCCC)(CCCCC)COC Chemical compound COC[Si](CCCCC)(CCCCC)COC SHUIOLIQCRMWLO-UHFFFAOYSA-N 0.000 claims description 3
- GUOWEPAOWABTET-UHFFFAOYSA-N COC[Si](CCCCC)(COC)COC Chemical compound COC[Si](CCCCC)(COC)COC GUOWEPAOWABTET-UHFFFAOYSA-N 0.000 claims description 3
- AEUMPVPFYXIYGS-UHFFFAOYSA-N COC[Si](CCCCCC)(COC)COC Chemical compound COC[Si](CCCCCC)(COC)COC AEUMPVPFYXIYGS-UHFFFAOYSA-N 0.000 claims description 3
- CKJAQMFCFNMCAV-UHFFFAOYSA-N COC[Si](O[Si](OC)(C)COC)(OC)C Chemical compound COC[Si](O[Si](OC)(C)COC)(OC)C CKJAQMFCFNMCAV-UHFFFAOYSA-N 0.000 claims description 3
- AQQWEMCNOMORGH-UHFFFAOYSA-N COC[Si](O[Si](O[Si](O[Si](OC)(C)COC)(C)COC)(C)COC)(OC)C Chemical compound COC[Si](O[Si](O[Si](O[Si](OC)(C)COC)(C)COC)(C)COC)(OC)C AQQWEMCNOMORGH-UHFFFAOYSA-N 0.000 claims description 3
- VDTGHUDAQZQKLI-UHFFFAOYSA-N C[Si](COC)(COC)C(C)C Chemical compound C[Si](COC)(COC)C(C)C VDTGHUDAQZQKLI-UHFFFAOYSA-N 0.000 claims description 3
- XCEWRUGLRXHEPC-UHFFFAOYSA-N bis(methoxymethyl)-diphenylsilane Chemical compound C=1C=CC=CC=1[Si](COC)(COC)C1=CC=CC=C1 XCEWRUGLRXHEPC-UHFFFAOYSA-N 0.000 claims description 3
- GNGDZVBKNGHOFV-UHFFFAOYSA-N butyl(methoxymethyl)silane Chemical compound C(CCC)[SiH2]COC GNGDZVBKNGHOFV-UHFFFAOYSA-N 0.000 claims description 3
- HJTOHYRBSSKYLJ-UHFFFAOYSA-N methoxymethyl(triphenyl)silane Chemical compound C=1C=CC=CC=1[Si](C=1C=CC=CC=1)(COC)C1=CC=CC=C1 HJTOHYRBSSKYLJ-UHFFFAOYSA-N 0.000 claims description 3
- XLYKKDOEKUGOLO-UHFFFAOYSA-N methoxymethyl-tri(propan-2-yl)silane Chemical compound COC[Si](C(C)C)(C(C)C)C(C)C XLYKKDOEKUGOLO-UHFFFAOYSA-N 0.000 claims description 3
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 claims description 3
- ZDZDOFUEDVJSTG-UHFFFAOYSA-N C(C)(CC)[Si](COC)(C(C)CC)C(C)CC Chemical compound C(C)(CC)[Si](COC)(C(C)CC)C(C)CC ZDZDOFUEDVJSTG-UHFFFAOYSA-N 0.000 claims description 2
- ICLACWJTZPRBBA-UHFFFAOYSA-N COC[Si](C(C)CC)(C(C)CC)COC Chemical compound COC[Si](C(C)CC)(C(C)CC)COC ICLACWJTZPRBBA-UHFFFAOYSA-N 0.000 claims description 2
- WUVZZBUWKGVUSP-UHFFFAOYSA-N COC[Si](CC(C)C)(CC(C)C)COC Chemical compound COC[Si](CC(C)C)(CC(C)C)COC WUVZZBUWKGVUSP-UHFFFAOYSA-N 0.000 claims description 2
- CTQHEUAKQIWLQH-UHFFFAOYSA-N COC[Si](CCCCCC)(CCCCCC)COC Chemical compound COC[Si](CCCCCC)(CCCCCC)COC CTQHEUAKQIWLQH-UHFFFAOYSA-N 0.000 claims description 2
- ZIUFVWGEUCCCSW-UHFFFAOYSA-N methoxymethyl(propyl)silane Chemical compound C(CC)[SiH2]COC ZIUFVWGEUCCCSW-UHFFFAOYSA-N 0.000 claims description 2
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 7
- 239000012528 membrane Substances 0.000 claims 3
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical compound [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 claims 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical group C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 abstract 2
- 239000000565 sealant Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 125
- -1 siloxanes Chemical group 0.000 description 78
- 239000000758 substrate Substances 0.000 description 48
- 229910052760 oxygen Inorganic materials 0.000 description 30
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 23
- 239000001301 oxygen Substances 0.000 description 23
- 125000004429 atom Chemical group 0.000 description 21
- 239000011261 inert gas Substances 0.000 description 20
- 239000006200 vaporizer Substances 0.000 description 20
- 230000015572 biosynthetic process Effects 0.000 description 17
- 230000003746 surface roughness Effects 0.000 description 15
- 238000002834 transmittance Methods 0.000 description 15
- 238000000151 deposition Methods 0.000 description 14
- 230000008021 deposition Effects 0.000 description 14
- 239000001307 helium Substances 0.000 description 14
- 229910052734 helium Inorganic materials 0.000 description 14
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 14
- 239000000203 mixture Substances 0.000 description 13
- 229920006290 polyethylene naphthalate film Polymers 0.000 description 13
- 150000002430 hydrocarbons Chemical group 0.000 description 12
- 239000007788 liquid Substances 0.000 description 12
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 11
- 238000001644 13C nuclear magnetic resonance spectroscopy Methods 0.000 description 10
- 238000005160 1H NMR spectroscopy Methods 0.000 description 10
- 238000000921 elemental analysis Methods 0.000 description 10
- 125000005745 ethoxymethyl group Chemical group [H]C([H])([H])C([H])([H])OC([H])([H])* 0.000 description 10
- 238000002290 gas chromatography-mass spectrometry Methods 0.000 description 10
- 238000001514 detection method Methods 0.000 description 9
- 125000001181 organosilyl group Chemical group [SiH3]* 0.000 description 9
- 239000010453 quartz Substances 0.000 description 9
- 229920003023 plastic Polymers 0.000 description 8
- 238000003786 synthesis reaction Methods 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- CDIOPFIUDCSTHQ-UHFFFAOYSA-N dimethoxy-(methoxymethyl)-methylsilane Chemical compound COC[Si](C)(OC)OC CDIOPFIUDCSTHQ-UHFFFAOYSA-N 0.000 description 7
- KCWYOFZQRFCIIE-UHFFFAOYSA-N ethylsilane Chemical compound CC[SiH3] KCWYOFZQRFCIIE-UHFFFAOYSA-N 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 7
- 230000008016 vaporization Effects 0.000 description 7
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 125000004183 alkoxy alkyl group Chemical group 0.000 description 6
- 239000000047 product Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 125000003118 aryl group Chemical group 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- ZQTYRTSKQFQYPQ-UHFFFAOYSA-N trisiloxane Chemical compound [SiH3]O[SiH2]O[SiH3] ZQTYRTSKQFQYPQ-UHFFFAOYSA-N 0.000 description 5
- YJLIKUSWRSEPSM-WGQQHEPDSA-N (2r,3r,4s,5r)-2-[6-amino-8-[(4-phenylphenyl)methylamino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound C=1C=C(C=2C=CC=CC=2)C=CC=1CNC1=NC=2C(N)=NC=NC=2N1[C@@H]1O[C@H](CO)[C@@H](O)[C@H]1O YJLIKUSWRSEPSM-WGQQHEPDSA-N 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- OTSJJQFJULRIHP-UHFFFAOYSA-N COC[Si](COC)(COC)COC Chemical compound COC[Si](COC)(COC)COC OTSJJQFJULRIHP-UHFFFAOYSA-N 0.000 description 4
- 229940126639 Compound 33 Drugs 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- PNUZDKCDAWUEGK-CYZMBNFOSA-N Sitafloxacin Chemical compound C([C@H]1N)N(C=2C(=C3C(C(C(C(O)=O)=CN3[C@H]3[C@H](C3)F)=O)=CC=2F)Cl)CC11CC1 PNUZDKCDAWUEGK-CYZMBNFOSA-N 0.000 description 4
- 125000000217 alkyl group Chemical group 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 125000005448 ethoxyethyl group Chemical group [H]C([H])([H])C([H])([H])OC([H])([H])C([H])([H])* 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 125000006229 isopropoxyethyl group Chemical group [H]C([H])([H])C([H])(OC([H])([H])C([H])([H])*)C([H])([H])[H] 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- UNILWMWFPHPYOR-KXEYIPSPSA-M 1-[6-[2-[3-[3-[3-[2-[2-[3-[[2-[2-[[(2r)-1-[[2-[[(2r)-1-[3-[2-[2-[3-[[2-(2-amino-2-oxoethoxy)acetyl]amino]propoxy]ethoxy]ethoxy]propylamino]-3-hydroxy-1-oxopropan-2-yl]amino]-2-oxoethyl]amino]-3-[(2r)-2,3-di(hexadecanoyloxy)propyl]sulfanyl-1-oxopropan-2-yl Chemical compound O=C1C(SCCC(=O)NCCCOCCOCCOCCCNC(=O)COCC(=O)N[C@@H](CSC[C@@H](COC(=O)CCCCCCCCCCCCCCC)OC(=O)CCCCCCCCCCCCCCC)C(=O)NCC(=O)N[C@H](CO)C(=O)NCCCOCCOCCOCCCNC(=O)COCC(N)=O)CC(=O)N1CCNC(=O)CCCCCN\1C2=CC=C(S([O-])(=O)=O)C=C2CC/1=C/C=C/C=C/C1=[N+](CC)C2=CC=C(S([O-])(=O)=O)C=C2C1 UNILWMWFPHPYOR-KXEYIPSPSA-M 0.000 description 3
- PNFDNCYRHFBCHH-UHFFFAOYSA-N 2,4,6,8-tetrakis(methoxymethyl)-2,4,6,8-tetramethyl-1,3,5,7,2,4,6,8-tetraoxatetrasilocane Chemical compound COC[Si]1(C)O[Si](C)(COC)O[Si](C)(COC)O[Si](C)(COC)O1 PNFDNCYRHFBCHH-UHFFFAOYSA-N 0.000 description 3
- CKGRWHRPCHEYMP-UHFFFAOYSA-N C(C)OC[Si](CC)(COCC)COCC Chemical compound C(C)OC[Si](CC)(COCC)COCC CKGRWHRPCHEYMP-UHFFFAOYSA-N 0.000 description 3
- 125000005024 alkenyl aryl group Chemical group 0.000 description 3
- 125000003342 alkenyl group Chemical group 0.000 description 3
- 125000002877 alkyl aryl group Chemical group 0.000 description 3
- 125000005025 alkynylaryl group Chemical group 0.000 description 3
- 125000003710 aryl alkyl group Chemical group 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 3
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- 229930195734 saturated hydrocarbon Natural products 0.000 description 3
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- SBRXLTRZCJVAPH-UHFFFAOYSA-N ethyl(trimethoxy)silane Chemical compound CC[Si](OC)(OC)OC SBRXLTRZCJVAPH-UHFFFAOYSA-N 0.000 description 1
- UBYLFKFEUMKSTG-UHFFFAOYSA-N ethyl-methoxy-(2-methoxyethyl)silane Chemical compound COCC[SiH](OC)CC UBYLFKFEUMKSTG-UHFFFAOYSA-N 0.000 description 1
- ZLPDCXQJIXADSD-UHFFFAOYSA-N ethyl-methoxy-(methoxymethyl)silane Chemical compound COC[SiH](OC)CC ZLPDCXQJIXADSD-UHFFFAOYSA-N 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- QGGUMTNPIYCTSF-UHFFFAOYSA-N hexylsilane Chemical compound CCCCCC[SiH3] QGGUMTNPIYCTSF-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000005001 laminate film Substances 0.000 description 1
- 125000004401 m-toluyl group Chemical group [H]C1=C([H])C(=C([H])C(=C1[H])C([H])([H])[H])C(*)=O 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- NAGFEOSYJQSAEQ-UHFFFAOYSA-N methoxy-(2-methoxyethyl)-methylsilane Chemical compound COCC[SiH](OC)C NAGFEOSYJQSAEQ-UHFFFAOYSA-N 0.000 description 1
- NSVHLVHOECRTLP-UHFFFAOYSA-N methoxy-(methoxymethyl)-methylsilane Chemical compound COC[SiH](OC)C NSVHLVHOECRTLP-UHFFFAOYSA-N 0.000 description 1
- CRUHLYQEIGKKGN-UHFFFAOYSA-N methoxymethyl(2-methylpropyl)silane Chemical compound C(C(C)C)[SiH2]COC CRUHLYQEIGKKGN-UHFFFAOYSA-N 0.000 description 1
- SPZOWPINGVKVSY-UHFFFAOYSA-N methoxymethyl(dimethyl)silane Chemical compound COC[SiH](C)C SPZOWPINGVKVSY-UHFFFAOYSA-N 0.000 description 1
- HYRCKUAWXXGRAD-UHFFFAOYSA-N methoxymethyl(methyl)silane Chemical compound COC[SiH2]C HYRCKUAWXXGRAD-UHFFFAOYSA-N 0.000 description 1
- ARYZCSRUUPFYMY-UHFFFAOYSA-N methoxysilane Chemical compound CO[SiH3] ARYZCSRUUPFYMY-UHFFFAOYSA-N 0.000 description 1
- 125000006178 methyl benzyl group Chemical group 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 125000005441 o-toluyl group Chemical group [H]C1=C([H])C(C(*)=O)=C(C([H])=C1[H])C([H])([H])[H] 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- OZNBCZNYOIYUKG-UHFFFAOYSA-N pentan-2-ylsilane Chemical compound C(C)(CCC)[SiH3] OZNBCZNYOIYUKG-UHFFFAOYSA-N 0.000 description 1
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 150000004756 silanes Chemical group 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- LPRCTHBAFLFZNI-UHFFFAOYSA-N tetrakis(2-ethoxyethyl)silane Chemical compound CCOCC[Si](CCOCC)(CCOCC)CCOCC LPRCTHBAFLFZNI-UHFFFAOYSA-N 0.000 description 1
- XJQNSAIHDPWVTQ-UHFFFAOYSA-N tetrakis(2-methoxyethyl)silane Chemical compound COCC[Si](CCOC)(CCOC)CCOC XJQNSAIHDPWVTQ-UHFFFAOYSA-N 0.000 description 1
- WVEKDHFNOMWIPR-UHFFFAOYSA-N triethoxy(2-ethoxyethyl)silane Chemical compound CCOCC[Si](OCC)(OCC)OCC WVEKDHFNOMWIPR-UHFFFAOYSA-N 0.000 description 1
- JBXVKKWMCCFHMP-UHFFFAOYSA-N triethyl(2-methoxyethyl)silane Chemical compound CC[Si](CC)(CC)CCOC JBXVKKWMCCFHMP-UHFFFAOYSA-N 0.000 description 1
- JCGDCINCKDQXDX-UHFFFAOYSA-N trimethoxy(2-trimethoxysilylethyl)silane Chemical compound CO[Si](OC)(OC)CC[Si](OC)(OC)OC JCGDCINCKDQXDX-UHFFFAOYSA-N 0.000 description 1
- VYZNPJVETIDWBV-UHFFFAOYSA-N tris(2-methoxyethyl)silane Chemical compound COCC[SiH](CCOC)CCOC VYZNPJVETIDWBV-UHFFFAOYSA-N 0.000 description 1
- LTLYHJWRDIBNPW-UHFFFAOYSA-N tris(methoxymethyl)silane Chemical compound COC[SiH](COC)COC LTLYHJWRDIBNPW-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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- H01—ELECTRIC ELEMENTS
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- H01L21/02107—Forming insulating materials on a substrate
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- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
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Abstract
Description
(1)少なくとも一つのメトキシアルキルがケイ素原子に直結した構造を有する直鎖状有機ケイ素化合物を原料として用い、化学気相成長法により成膜して得られることを特徴とする、炭素含有酸化ケイ素膜。
(2)少なくとも一つのメトキシアルキルがケイ素原子に直結した構造を有する直鎖状有機ケイ素化合物が下記一般式(1)
である、(1)に記載の膜。
(3)少なくとも一つのメトキシアルキルがケイ素原子に直結した構造を有する直鎖状有機ケイ素化合物が下記一般式(2)
である、(1)に記載の膜。
(4)化学気相成長法が、プラズマ励起化学気相成長法である、(1)〜(3)いずれかに記載の膜。
(5)化学気相成長法が、触媒化学気相成長法である、(1)〜(3)いずれかに記載の膜。
(6)上述の(1)乃至(5)のいずれかに記載の膜を、さらに熱処理、紫外線照射処理または電子線処理して得られることを特徴とする膜。
(7)上述の(1)乃至(6)のいずれかに記載の膜からなる封止膜。
(8)上述の(7)に記載の封止膜をガスバリア層として用いることを特徴とするガスバリア部材。
(9)上述の(7)に記載の封止膜、または上述の(8)に記載のガスバリア部材を含んでなることを特徴とするフラットパネルディスプレイデバイス。
(10)上述の(7)に記載の封止膜を含んでなることを特徴とする半導体デバイス。
(11)トリス(メトキシメチル)エチルシラン、トリス(メトキシメチル)n−プロピルシラン、トリス(メトキシメチル)イソプロピルシラン、トリス(メトキシメチル)n−ブチルシラン、トリス(メトキシメチル)イソブチルシラン、トリス(メトキシメチル)sec−ブチルシラン、トリス(メトキシメチル)n−ペンチルシラン、トリス(メトキシメチル)sec−アミルシラン、トリス(メトキシメチル)シクロペンチルシラン、トリス(メトキシメチル)n−ヘキシルシラン、トリス(メトキシメチル)シクロヘキシルシラン、トリス(メトキシメチル)ビニルシラン、トリス(メトキシメチル)アリルシラン、トリス(メトキシメチル)フェニルシラン、
ビス(メトキシメチル)ジメチルシラン、ビス(メトキシメチル)ジエチルシラン、ビス(メトキシメチル)ジn−プロピルシラン、ビス(メトキシメチル)ジイソプロピルシラン、ビス(メトキシメチル)ジn−ブチルシラン、ビス(メトキシメチル)ジイソブチルシラン、ビス(メトキシメチル)ジsec−ブチルシラン、ビス(メトキシメチル)ジn−ペンチルシラン、ビス(メトキシメチル)ジsec−アミルシラン、ビス(メトキシメチル)ジシクロペンチルシラン、ビス(メトキシメチル)ジn−ヘキシルシラン、ビス(メトキシメチル)ジシクロヘキシルシラン、ビス(メトキシメチル)ジビニルシラン、ビス(メトキシメチル)ジアリルシラン、ビス(メトキシメチル)ジフェニルシラン、
トリメチル(メトキシメチルシラン)、トリエチル(メトキシメチル)シラン、トリn−プロピル(メトキシメチル)シラン、トリイソプロピル(メトキシメチル)シラン、トリn−ブチル(メトキシメチル)シラン、トリイソブチル(メトキシメチル)シラン、トリsec−ブチル(メトキシメチル)シラン、トリn−ペンチル(メトキシメチル)シラン、トリsec−アミル(メトキシメチル)シラン、トリシクロペンチル(メトキシメチル)シラン、トリn−ヘキシル(メトキシメチル)シラン、トリシクロヘキシル(メトキシメチル)シラン、トリビニル(メトキシメチル)シラン、トリアリル(メトキシメチル)シラン、トリフェニル(メトキシメチル)シラン、
イソプロピルメチルビス(メトキシメチル)シラン、イソプロピルエチルビス(メトキシメチル)シラン、イソプロピルビニルビス(メトキシメチル)シラン、
1,3−ビス(メトキシメチル)−1,3−ジメチル−1,3−ジメトキシジシロキサン、1,3−ビス(メトキシエチル)−1,3−ジメチル−1,3−ジメトキシジシロキサン、
1,3,5−トリス(メトキシメチル)−1,3,5−トリメチル−1,5−ジメトキシトリシロキサン、1,3,5−トリス(メトキシエチル)−1,3,5−トリメチル−1,5−ジメトキシトリシロキサン、
1,3,5,7−テトラキス(メトキシメチル)−1,3,5,7−テトラメチル−1,7−ジメトキシテトラシロキサン、2,4,6,8−テトラキス(メトキシエチル)−2,4,6,8−テトラメチルシクロテトラシロキサン
(12)一般式(1)で示される化合物を含有することを特徴とする化学気相成長法用の成膜材料。
(13)少なくとも一つのメトキシアルキルがケイ素原子に直結した構造を有する直鎖状有機ケイ素化合物が下記一般式(4)
である、(1)に記載の膜。
(14)化学気相成長法が、プラズマ励起化学気相成長法である、(13)に記載の膜。
(15)化学気相成長法が、触媒化学気相成長法である、(13)に記載の膜。
(16)上述の(13)乃至(15)のいずれかに記載の膜を、さらに熱処理、紫外線照射処理または電子線処理して得られることを特徴とする膜。
(17)上述の(13)乃至(16)のいずれかに記載の膜からなる封止膜。
(18)上述の(17)に記載の封止膜をガスバリア層として用いることを特徴とするガスバリア部材。
(19)上述の(17)に記載の封止膜、または上述の(18)に記載のガスバリア部材を含んでなることを特徴とするフラットパネルディスプレイデバイス。
(20)上述の(17)に記載の封止膜を含んでなることを特徴とする半導体デバイス。
(21)ケイ素原子間がアルキレンオキシ鎖で結合された構造を有する(1)、(2)、(3)、または(13)記載の炭素含有酸化ケイ素膜。
(22)ケイ素原子間がアルキレンオキシ鎖で結合された構造を有する(21)に記載の封止膜。
(23)水透過性が5×10−3g/m2・day以下であることを特徴とする(18)記載のガスバリア部材。
(1−メトキシメチル)シラン、ビス(1−メトキシメチル)シラン、トリス(1−メトキシメチル)シラン、テトラキス(1−メトキシメチル)シラン、
(1−エトキシメチル)シラン、ビス(1−エトキシメチル)シラン、トリス(1−エ
トキシメチル)シラン、テトラキス(1−エトキシメチル)シラン、(2−メトキシエ
チル)シラン、ビス(2−メトキシエチル)シラン、トリス(2−メトキシエチル)シラン、テトラキス(2−メトキシエチル)シラン、(2−エトキシエチル)シラン、ビス
(2−エトキシエチル)シラン、トリス(2−エトキシエチル)シラン、テトラキス(2−エトキシエチル)シラン、
(1−メトキシメチル)メチルシラン、ビス(1−メトキシメチル)メチルシラン、トリス(1−メトキシメチル)メチルシラン、ビス(メトキシメチル)ジメチルシラン、トリメチル(メトキシメチル)シラン、
(1−エトキシメチル)メチルシラン、ビス(1−エトキシメチル)メチルシラン、トリス(1−エトキシメチル)メチルシラン、(2−メトキシエチル)メチルシラン、ビス(2−メトキシエチル)メチルシラン、トリス(2−メトキシエチル)メチルシラン、(2−エトキシエチル)メチルシラン、ビス(2−エトキシエチル)メチルシラン、トリス(2−エトキシエチル)メチルシラン、(1−メトキシメチル)エチルシラン、ビス(1−メトキシメチル)エチルシラン、トリス(1−メトキシメチル)エチルシラン、
(1−エトキシメチル)エチルシラン、ビス(1−エトキシメチル)エチルシラン、トリス(1−エトキシメチル)エチルシラン、(2−メトキシエチル)エチルシラン、ビス(2−メトキシエチル)エチルシラン、トリス(2−メトキシエチル)エチルシラン、
(2−エトキシエチル)エチルシラン、ビス(2−エトキシエチル)エチルシラン、トリス(2−エトキシエチル)エチルシランなどが挙げられる。
(2−メトキシエチル)イソブチルシラン、ビス(2−メトキシエチル)イソブチルシラン、トリス(2−メトキシエチル)イソブチルシラン、 (2−エトキシエチル)イソブチルシラン、ビス(2−エトキシエチル)イソブチルシラン、トリス(2−エトキシエチル)イソブチルシラン等があげられる。
イソプロピルメチルビス(メトキシメチル)シラン、イソプロピルメチルビス(エトキシメチル)シラン、イソプロピルエチルビス(メトキシメチル)シラン、イソプロピルエチルビス(エトキシメチル)シラン、イソプロピルビニルビス(メトキシメチル)シラン、イソプロピルビニルビス(エトキシメチル)シラン等が例示できる。
1,3−ビス(メトキシメチル)−1,3−ジメチル−1,3−ジメトキシジシロキサン、1,3−ビス(エトキシメチル)−1,3−ジメチル−1,3−ジメトキシジシロキサン、1,3−ビス(メトキシメチル)−1,3−ジメチル−1,3−ジエトキシジシロキサン、1,3−ビス(エトキシメチル)−1,3−ジメチル−1,3−ジエトキシジシロキサン、
1,3−ビス(メトキシエチル)−1,3−ジメチル−1,3−ジメトキシジシロキサン、1,3−ビス(エトキシエチル)−1,3−ジメチル−1,3−ジメトキシジシロキサン、1,3−ビス(メトキシエチル)−1,3−ジメチル−1,3−ジエトキシジシロキサン、1,3−ビス(エトキシエチル)−1,3−ジメチル−1,3−ジエトキシジシロキサン、
1,3−ビス(メトキシメチル)−1,3−ジイソプロピル−1,3−ジメトキシジシロキサン、1,3−ビス(メトキシエチル)−1,3−ジイソプロピル−1,3−ジメトキシジシロキサン、1,3,5−トリス(メトキシメチル)−1,3,5−トリメチル−1,5−ジメトキシトリシロキサン、1,3,5−トリス(エトキシメチル)−1,3,5−トリメチル−1,5−ジメトキシトリシロキサン、1,3,5−トリス(n−プロポキシメチル)−1,3,5−トリメチル−1,5−ジメトキシトリシロキサン、1,3,5−トリス(イソプロポキシメチル)−1,3,5−トリメチル−1,5−ジメトキシトリシロキサン、1,3,5−トリス(n−ブトキシメチル)−1,3,5−トリメチル−1,5−ジメトキシトリシロキサン、1,3,5−トリス(iso.−ブトキシメチル)−1,3,5−トリメチル−1,5−ジメトキシトリシロキサン、1,3,5−トリス(tert.−ブトキシメチル)−1,3,5−トリメチル−1,5−ジメトキシトリシロキサン等が挙げられる。
2,4,6−トリス(2−メトキシエチル)−2,4,6−トリメチルシクロトリシロキサン、2,4,6−トリス(2−tert.−ブトキシエチル)−2,4,6−トリメチルシクロトリシロキサン、2,4,6,8−テトラキス(2−メトキシエチル)−2,4,6,8−テトラメチルシクロテトラシロキサン、2,4,6,8−テトラキス(2−tert.−ブトキシエチル)−2,4,6,8−テトラメチルシクロテトラシロキサン、2,4,6,8,10−ペンタキス(2−メトキシエチル)−2,4,6,8,10−ペンタメチルシクロペンタシロキサン、2,4,6,8,10−ペンタキス(2−tert.−ブトキシエチル)−2,4,6,8,10−ペンタメチルシクロテトラシロキサン
2,4,6−トリス(4−メトキシフェニル)−2,4,6−トリメチルシクロトリシロキサン、2,4,6−トリス(4−tert.−ブトキシフェニル)−2,4,6−トリメチルシクロトリシロキサン、2,4,6,8−テトラキス(4−メトキシフェニル)−2,4,6,8−テトラメチルシクロテトラシロキサン、2,4,6,8−テトラキス(4−tert.−ブトキシフェニル)−2,4,6,8−テトラメチルシクロテトラシロキサン、2,4,6,8,10−ペンタキス(4−メトキシフェニル)−2,4,6,8,10−ペンタメチルシクロペンタシロキサン、2,4,6,8,10−ペンタキス(4−tert.−ブトキシフェニル)−2,4,6,8,10−ペンタメチルシクロペンタシロキサン等が挙げられる。
2,4,6−トリス(メトキシメチル)−2,4,6−トリエチルシクロトリシロキサン、2,4,6−トリス(エトキシメチル)−2,4,6−トリエチルシクロトリシロキサン、2,4,6−トリス(n−プロポキシメチル)−2,4,6−トリエチルシクロトリシロキサン、2,4,6−トリス(イソプロポキシメチル)−2,4,6−トリエチルシクロトリシロキサン、2,4,6−トリス(n−ブトキシメチル)−2,4,6−トリエチルシクロトリシロキサン、2,4,6−トリス(iso.−ブトキシメチル)−2,4,6−トリエチルシクロトリシロキサン、2,4,6−トリス(tert.−ブトキシメチル)−2,4,6−トリエチルシクロトリシロキサン等が挙げられる。
2,4,6−トリス(メトキシメチル)−2,4,6−トリn−プロピルシクロトリシロキサン、2,4,6−トリス(エトキシメチル)−2,4,6−トリn−プロピルシクロトリシロキサン、2,4,6−トリス(n−プロポキシメチル)−2,4,6−トリn−プロピルシクロトリシロキサン、2,4,6−トリス(イソプロポキシメチル)−2,4,6−トリn−プロピルシクロトリシロキサン、2,4,6−トリス(n−ブトキシメチル)−2,4,6−トリn−プロピルシクロトリシロキサン、2,4,6−トリス(iso.−ブトキシメチル)−2,4,6−トリn−プロピルシクロトリシロキサン、2,4,6−トリス(tert.−ブトキシメチル)−2,4,6−トリn−プロピルシクロトリシロキサン等が挙げられる。
2,4,6−トリス(メトキシメチル)−2,4,6−トリシクロペンチルシクロトリシロキサン、2,4,6−トリス(エトキシメチル)−2,4,6−トリシクロペンチルシクロトリシロキサン、2,4,6−トリス(n−プロポキシメチル)−2,4,6−トリシクロペンチルシクロトリシロキサン、2,4,6−トリス(イソプロポキシメチル)−2,4,6−トリシクロペンチルシクロトリシロキサン、2,4,6−トリス(n−ブトキシメチル)−2,4,6−トリシクロペンチルシクロトリシロキサン、2,4,6−トリス(iso.−ブトキシメチル)−2,4,6−トリシクロペンチルシクロトリシロキサン、2,4,6−トリス(tert.−ブトキシメチル)−2,4,6−トリシクロペンチルシクロトリシロキサン等が挙げられる。
2,4,6−トリス(メトキシエチル)−2,4,6−トリメチルシクロトリシロキサン、2,4,6−トリス(エトキシエチル)−2,4,6−トリメチルシクロトリシロキサン、2,4,6−トリス(n−プロポキシエチル)−2,4,6−トリメチルシクロトリシロキサン、2,4,6−トリス(イソプロポキシエチル)−2,4,6−トリメチルシクロトリシロキサン、2,4,6−トリス(n−ブトキシエチル)−2,4,6−トリメチルシクロトリシロキサン、2,4,6−トリス(iso.−ブトキシエチル)−2,4,6−トリメチルシクロトリシロキサン、2,4,6−トリス(tert.−ブトキシエチル)−2,4,6−トリメチルシクロトリシロキサン等が挙げられる。
2,4,6−トリス(メトキシエチル)−2,4,6−トリイソプロピルシクロトリシロキサン、2,4,6−トリス(エトキシエチル)−2,4,6−トリイソプロピルシクロトリシロキサン、2,4,6−トリス(n−プロポキシエチル)−2,4,6−トリイソプロピルシクロトリシロキサン、2,4,6−トリス(イソプロポキシエチル)−2,4,6−トリイソプロピルシクロトリシロキサン、2,4,6−トリス(n−ブトキシエチル)−2,4,6−トリイソプロピルシクロトリシロキサン、2,4,6−トリス(iso.−ブトキシエチル)−2,4,6−トリイソプロピルシクロトリシロキサン、2,4,6−トリス(tert.−ブトキシエチル)−2,4,6−トリイソプロピルシクロトリシロキサン等が挙げられる。
2,4,6−トリス(メトキシエチル)−2,4,6−トリtert.−ブチルシクロトリシロキサン、2,4,6−トリス(エトキシエチル)−2,4,6−トリtert.−ブチルシクロトリシロキサン、2,4,6−トリス(n−プロポキシエチル)−2,4,6−トリtert.−ブチルシクロトリシロキサン、2,4,6−トリス(イソプロポキシエチル)−2,4,6−トリtert.−ブチルシクロトリシロキサン、2,4,6−トリス(n−ブトキシエチル)−2,4,6−トリtert.−ブチルシクロトリシロキサン、2,4,6−トリス(iso.−ブトキシエチル)−2,4,6−トリtert.−ブチルシクロトリシロキサン、2,4,6−トリス(tert.−ブトキシエチル)−2,4,6−トリtert.−ブチルシクロトリシロキサン等が挙げられる。
2,4,6−トリス(メトキシエチル)−2,4,6−トリシクロヘキシルシクロトリシロキサン、2,4,6−トリス(エトキシエチル)−2,4,6−トリシクロヘキシルシクロトリシロキサン、2,4,6−トリス(n−プロポキシエチル)−2,4,6−トリシクロヘキシルシクロトリシロキサン、2,4,6−トリス(イソプロポキシエチル)−2,4,6−トリシクロヘキシルシクロトリシロキサン、2,4,6−トリス(n−ブトキシエチル)−2,4,6−トリシクロヘキシルシクロトリシロキサン、2,4,6−トリス(iso.−ブトキシエチル)−2,4,6−トリシクロヘキシルシクロトリシロキサン、2,4,6−トリス(tert.−ブトキシエチル)−2,4,6−トリシクロヘキシルシクロトリシロキサン等が挙げられる。
2,4,6,8−テトラキス(メトキシメチル)−2,4,6,8−テトラメチルシクロテトラシロキサン、2,4,6,8−テトラキス(エトキシメチル)−2,4,6,8−テトラメチルシクロテトラシロキサン、2,4,6,8−テトラキス(n−プロポキシメチル)−2,4,6,8−テトラメチルシクロテトラシロキサン、2,4,6,8−テトラキス(イソプロポキシメチル)−2,4,6,8−テトラメチルシクロテトラシロキサン、2,4,6,8−テトラキス(n−ブトキシメチル)−2,4,6,8−テトラメチルシクロテトラシロキサン、2,4,6,8−テトラキス(イソブトキシメチル)−2,4,6,8−テトラメチルシクロテトラシロキサン、2,4,6,8−テトラキス(tert.−ブトキシメチル)−2,4,6,8−テトラメチルシクロテトラシロキサン等が挙げられる。
2,4,6,8−テトラキス(メトキシメチル)−2,4,6,8−テトラn−プロピルシクロテトラシロキサン、2,4,6,8−テトラキス(エトキシメチル)−2,4,6,8−テトラn−プロピルシクロテトラシロキサン、2,4,6,8−テトラキス(n−プロポキシメチル)−2,4,6,8−テトラn−プロピルシクロテトラシロキサン、2,4,6,8−テトラキス(イソプロポキシメチル)−2,4,6,8−テトラn−プロピルシクロテトラシロキサン、2,4,6,8−テトラキス(n−ブトキシメチル)−2,4,6,8−テトラn−プロピルシクロテトラシロキサン、2,4,6,8−テトラキス(イソブトキシメチル)−2,4,6,8−テトラn−プロピルシクロテトラシロキサン、2,4,6,8−テトラキス(tert.−ブトキシメチル)−2,4,6,8−テトラn−プロピルシクロテトラシロキサン等が挙げられる。
2,4,6,8−テトラキス(メトキシメチル)−2,4,6,8−テトラtert.−ブチルシクロテトラシロキサン、2,4,6,8−テトラキス(エトキシメチル)−2,4,6,8−テトラtert.−ブチルシクロテトラシロキサン、2,4,6,8−テトラキス(n−プロポキシメチル)−2,4,6,8−テトラtert.−ブチルシクロテトラシロキサン、2,4,6,8−テトラキス(イソプロポキシメチル)−2,4,6,8−テトラtert.−ブチルシクロテトラシロキサン、2,4,6,8−テトラキス(n−ブトキシメチル)−2,4,6,8−テトラtert.−ブチルシクロテトラシロキサン、2,4,6,8−テトラキス(イソブトキシメチル)−2,4,6,8−テトラtert.−ブチルシクロテトラシロキサン、2,4,6,8−テトラキス(tert.−ブトキシメチル)−2,4,6,8−テトラtert.−ブチルシクロテトラシロキサン等が挙げられる。
2,4,6,8−テトラキス(メトキシメチル)−2,4,6,8−テトラシクロヘキシルシクロテトラシロキサン、2,4,6,8−テトラキス(エトキシメチル)−2,4,6,8−テトラシクロヘキシルシクロテトラシロキサン、2,4,6,8−テトラキス(n−プロポキシメチル)−2,4,6,8−テトラシクロヘキシルシクロテトラシロキサン、2,4,6,8−テトラキス(イソプロポキシメチル)−2,4,6,8−テトラシクロヘキシルシクロテトラシロキサン、2,4,6,8−テトラキス(n−ブトキシメチル)−2,4,6,8−テトラシクロヘキシルシクロテトラシロキサン、2,4,6,8−テトラキス(イソブトキシメチル)−2,4,6,8−テトラシクロヘキシルシクロテトラシロキサン、2,4,6,8−テトラキス(tert.−ブトキシメチル)−2,4,6,8−テトラシクロヘキシルシクロテトラシロキサン等が挙げられる。
2,4,6,8−テトラキス(メトキシエチル)−2,4,6,8−テトラエチルシクロテトラシロキサン、2,4,6,8−テトラキス(エトキシエチル)−2,4,6,8−テトラエチルシクロテトラシロキサン、2,4,6,8−テトラキス(n−プロポキシエチル)−2,4,6,8−テトラエチルシクロテトラシロキサン、2,4,6,8−テトラキス(イソプロポキシエチル)−2,4,6,8−テトラエチルシクロテトラシロキサン、2,4,6,8−テトラキス(n−ブトキシエチル)−2,4,6,8−テトラエチルシクロテトラシロキサン、2,4,6,8−テトラキス(イソブトキシエチル)−2,4,6,8−テトラエチルシクロテトラシロキサン、2,4,6,8−テトラキス(tert.−ブトキシエチル)−2,4,6,8−テトラエチルシクロテトラシロキサン等が挙げられる。
2,4,6,8−テトラキス(メトキシエチル)−2,4,6,8−テトライソプロピルシクロテトラシロキサン、2,4,6,8−テトラキス(エトキシエチル)−2,4,6,8−テトライソプロピルシクロテトラシロキサン、2,4,6,8−テトラキス(n−プロポキシエチル)−2,4,6,8−テトライソプロピルシクロテトラシロキサン、2,4,6,8−テトラキス(イソプロポキシエチル)−2,4,6,8−テトライソプロピルシクロテトラシロキサン、2,4,6,8−テトラキス(n−ブトキシエチル)−2,4,6,8−テトライソプロピルシクロテトラシロキサン、2,4,6,8−テトラキス(イソブトキシエチル)−2,4,6,8−テトライソプロピルシクロテトラシロキサン、2,4,6,8−テトラキス(tert.−ブトキシエチル)−2,4,6,8−テトライソプロピルシクロテトラシロキサン等が挙げられる。
2,4,6,8−テトラキス(メトキシエチル)−2,4,6,8−テトラシクロペンチルシクロテトラシロキサン、2,4,6,8−テトラキス(エトキシエチル)−2,4,6,8−テトラシクロペンチルシクロテトラシロキサン、2,4,6,8−テトラキス(n−プロポキシエチル)−2,4,6,8−テトラシクロペンチルシクロテトラシロキサン、2,4,6,8−テトラキス(イソプロポキシエチル)−2,4,6,8−テトラシクロペンチルシクロテトラシロキサン、2,4,6,8−テトラキス(n−ブトキシエチル)−2,4,6,8−テトラシクロペンチルシクロテトラシロキサン、2,4,6,8−テトラキス(イソブトキシエチル)−2,4,6,8−テトラシクロペンチルシクロテトラシロキサン、2,4,6,8−テトラキス(tert.−ブトキシエチル)−2,4,6,8−テトラシクロペンチルシクロテトラシロキサン等が挙げられる。
2,4,6,8−テトラキス(メトキシプロピル)−2,4,6,8−テトラメチルシクロトリシロキサン、2,4,6,8−テトラキス(メトキシプロピル)−2,4,6,8−テトラエチルシクロトリシロキサン、2,4,6,8−テトラキス(メトキシプロピル)−2,4,6,8−テトライソプロピルシクロトリシロキサン、2,4,6,8−テトラキス(メトキシブチル)−2,4,6,8−テトラメチルシクロトリシロキサン、2,4,6,8−テトラキス(メトキシペンチル)−2,4,6,8−テトラメチルシクロトリシロキサン、2,4,6,8−テトラキスメトキシヘキシル)−2,4,6,8−テトラメチルシクロトリシロキサン等が挙げられる。
2,4,6,8,10−ペンタキス(メトキシエチル)−2,4,6,8,10−ペンタメチルシクロペンタシロキサン、2,4,6,8,10−ペンタキス(メトキシエチル)−2,4,6,8,10−ペンタエチルシクロペンタシロキサン、2,4,6,8,10−ペンタキス(メトキシエチル)−2,4,6,8,10−ペンタイソプロピルシクロペンタシロキサン等を挙げることができる。
1,2−ビス[トリス(メトキシメチル)シリル]エタン、ビス[トリス(エトキシメチル)シリル]エタン、1,2−ビス[ビス(メトキシメチル)メチルシリル]エタン、1,2−ビス[ビス(エトキシメチル)メチルシリル]エタン、1,2−ビス[ジメチル(メトキシメチル)シリル]エタン、1,2−ビス[ジメチル(エトキシメチル)シリル]エタン
1−トリメチルシリル−2−トリス(メトキシメチル)シリルエタン、1−トリメチルシリル−2−トリス(エトキシメチル)シリルエタン、1−(tert.−ブチルジメチルシリル)−2−トリス(メトキシメチル)シリルエタン、1−(tert.−ブチルジメチルシリル)−2−トリス(エトキシメチル)シリルエタン等を挙げることができる。
図1に示した平行平板容量結合型PECVD装置を用いてポリエチレンナフタレートフィルム基板上に成膜した。成膜条件は、気化させた(1−メトキシメチル)メチルジメトキシシランの流量50sccm、ヘリウムガスの流量50sccm、チャンバー内圧10Pa、基板温度室温、RF電源電力200W、RF電源周波数13.56MHzの条件で10分間成膜した。
図1に示した平行平板容量結合型PECVD装置を用いて、ポリエチレンナフタレートフィルム基板上に成膜した。成膜条件は、気化させた(1−メトキシメチル)メチルジメトキシシランの流量50sccm、ヘリウムガスの流量50sccm、酸素50sccm、チャンバー内圧10Pa、基板温度室温、RF電源電力200W、RF電源周波数13.56MHzの条件で10分間成膜した。
[1,3,5−トリス(メトキシメチル)−1,3,5−トリメチル−1,5−ジメトキシトリシロキサンの合成]
攪拌装置と滴下濾斗を備えた200mlのシュレンク管にトルエン20.0g(0.217mol)に0.01Nの硫酸水溶液2.4gを仕込み、氷浴で冷却しつつ攪拌した。滴下濾斗より、メチル(メトキシメチル)ジメトキシシラン20.0g(0.133mol)を0℃にて3分間で滴下した。滴下終了後、0℃で3時間攪拌した。反応終了後、トルエンを留去し、減圧蒸留により、目的物である1,3,5−トリス(メトキシメチル)−1,3,5−トリメチル−1,5−ジメトキシトリシロキサンを得た。
1H−NMR;δ0.17〜0.19ppm(m,9H,3CH 3 −Si)、
δ3.04〜3.07ppm(m,6H,3CH3−O−CH 2 Si)、
δ3.34〜3.36ppm(m,9H,3CH 3 −O−CH2Si)
δ3.54〜3.56ppm(m,6H,2CH 3 −O−Si)
13C−NMR;δ−2.2ppm(CH3−Si)、
δ50.8ppm(CH3−O−Si)
δ62.9ppm(CH3−O−CH2Si)、
δ65.8ppm(CH3−O−CH2Si)
GC−MS;Mw=358
元素分析;C11H30О7Si3
[容量結合型PECVD装置による1,3,5−トリス(メトキシメチル)−1,3,5−トリメチル−1,5−ジメトキシトリシロキサンを用いた炭素含有酸化ケイ素封止膜の成膜]
図1に示した平行平板容量結合型PECVD装置を用いて、ポリエチレンナフタレートフィルム基板上に成膜した。成膜条件は、気化させた1,3,5−トリス(メトキシメチル)−1,3,5−トリメチル−1,5−ジメトキシトリシロキサンの流量50sccm、ヘリウムガスの流量50sccm、チャンバー内圧10Pa、基板温度室温、RF電源電力200W、RF電源周波数13.56MHzの条件で10分間成膜した。
図1に示した平行平板容量結合型PECVD装置を用いて、ポリエチレンナフタレートフィルム基板上に成膜した。成膜条件は、気化させた2,4,6,8−テトラキス(メトキシメチル)−2,4,6,8−テトラメチルシクロテトラシロキサンの流量50sccm、ヘリウムガスの流量50sccm、チャンバー内圧10Pa、基板温度室温、RF電源電力200W、RF電源周波数13.56MHzの条件で10分間成膜した。
[テトラキス(メトキシメチル)シランの合成]
電磁式攪拌装置と滴下濾斗を備えた500mlの四ツ口フラスコにTHF305ml、平均粒径60μmのNaディスパージョン48.3g(2.10mol)、テトラメトキシシラン41.7g(0.27mol)を仕込み、室温にて攪拌した。
図1に示した平行平板容量結合型PECVD装置を用いて、ポリエチレンナフタレートフィルム基板上に成膜した。成膜条件は、気化させたテトラキス(メトキシメチル)シランの流量50sccm、ヘリウムガスの流量50sccm、チャンバー内圧10Pa、基板温度室温、RF電源電力200W、RF電源周波数13.56MHzの条件で10分間成膜した。
[トリス(メトキシメチル)エチルシランの合成]
実施例5においてテトラメトキシシランに代えて、エチルトリメトキシシラン40.6g(0.27mol)としたこと以外は、実施例5と同様にして合成し、目的物であるトリス(メトキシメチル)エチルシランを得た。単離収率は、77.4%であった。
1H−NMR;δ0.68ppm(q,2H,CH3−CH 2 −Si)、
δ0.97ppm(t,3H,CH 3 −CH2−Si)、
δ3.24ppm(s,6H,3CH3−O−CH 2 −Si)、
δ3.29ppm(s,9H,3CH 3 −O−CH2Si)
13C−NMR;δ0.83ppm(CH3 CH2−Si)、
δ7.16ppm(CH3CH2−Si)、
δ61.8ppm(CH3−OCH2−Si)、
δ63.4ppm(CH3O−OCH2−Si)
IR(cm−1);2974〜2808、1215、1178、1103、932〜797
GC−MS;Mw=192
元素分析;C8H20О3Si
[容量結合型PECVD装置によるトリス(メトキシメチル)エチルシランを用いた炭素含有酸化ケイ素封止膜の成膜]
図1に示した平行平板容量結合型PECVD装置を用いて、ポリエチレンナフタレートフィルム基板上に成膜した。成膜条件は、気化させたトリス(メトキシメチル)エチルシランの流量50sccm、ヘリウムガスの流量50sccm、チャンバー内圧10Pa、基板温度室温、RF電源電力200W、RF電源周波数13.56MHzの条件で10分間成膜した。
[トリス(メトキシメチル)シクロヘキシルシランの合成]
実施例5においてテトラメトキシシランに代えて、シクロヘキシルトリメトキシシラン55.1g(0.27mol)としたこと以外は、実施例5と同様にして合成し、目的物であるトリス(メトキシメチル)シクロヘキシルシランを得た。単離収率は、71.9%であった。
1H−NMR;
δ0.98ppm(m,1H,Cyclo−(CH2)3−(CH2)2−CH−Si)、
δ1.24ppm(m,4H,Cyclo−(CH2)3−(CH 2 ) 2 −CH−Si)、
δ1.71ppm(m,6H,Cyclo−(CH 2 ) 3 −(CH2)2−CH−Si)、
δ3.28ppm(s,6H,3CH3−O−CH 2 −Si)、
δ3.32ppm(s,9H,3CH 3 −O−CH2−Si)
13C−NMR;
δ21.6ppm(Cyclo−CH2−(CH2)2−(CH2)2−CH−Si)、
δ26.9ppm(Cyclo−CH2−(CH2)2−(CH2)2−CH−Si)、
δ27.6ppm(Cyclo−CH2−(CH2)2−(CH2)2−CH−Si)、
δ28.0ppm(Cyclo−CH2−(CH2)2−(CH2)2−CH−Si)、
δ61.4ppm(CH3−OCH2−Si)、
δ63.5ppm(CH3O−OCH2−Si)
IR(cm−1);2974〜2806、1447、1422、1218、1179、1104、934〜791
GC−MS;Mw=246
元素分析;C12H26О3Si
[容量結合型PECVD装置によるトリス(メトキシメチル)シクロヘキシルシランを用いた炭素含有酸化ケイ素封止膜の成膜]
図1に示した平行平板容量結合型PECVD装置を用いて、ポリエチレンナフタレートフィルム基板上に成膜した。成膜条件は、気化させたトリス(メトキシメチル)シクロヘキシルシランの流量50sccm、ヘリウムガスの流量50sccm、チャンバー内圧10Pa、基板温度室温、RF電源電力200W、RF電源周波数13.56MHzの条件
で10分間成膜した。
[ビス(メトキシメチル)ジメチルシランの合成]
実施例5においてテトラメトキシシランに代えて、ジメチルジメトキシシラン32.5g(0.27mol)としたこと以外は、実施例5と同様にして合成し、目的物であるビス(メトキシメチル)ジメチルシランを得た。単離収率は、52.6%であった。
1H−NMR;δ0.072ppm(s,6H,2CH 3 −Si)、
δ3.15ppm(s,4H,2CH3−O−CH 2 −Si)、
δ3.33ppm(s,6H,2CH 3 −O−CH2Si)
13C−NMR;δ−6.10ppm(CH3−Si)、
δ63.5ppm(CH3−OCH2−Si)、
δ65.2ppm(CH3O−OCH2−Si)
IR(cm−1);2974〜2808、1535、1423、1250、1178、1111、935〜708
GC−MS;Mw=148
元素分析;C6H16О2Si
[容量結合型PECVD装置によるビス(メトキシメチル)ジメチルシランを用いた炭素含有酸化ケイ素封止膜の成膜]
図1に示した平行平板容量結合型PECVD装置を用いて、ポリエチレンナフタレートフィルム基板上に成膜した。成膜条件は、気化させたビス(メトキシメチル)ジメチルシランの流量50sccm、ヘリウムガスの流量50sccm、チャンバー内圧10Pa、基板温度室温、RF電源電力200W、RF電源周波数13.56MHzの条件で10分間成膜した。
[1,2−ビス[トリス(メトキシメチル)シリル]エタンの合成]
実施例5においてテトラメトキシシランに代えて、1,2−ビス(トリメトキシシリル)エタン36.5g(0.135mol)としたこと以外は、実施例5と同様にして合成し、目的物である1,2−ビス[トリス(メトキシメチル)シリル]エタンを得た。単離収率は、14.9%であった。
1H−NMR;δ0.66ppm(m,4H,Si−CH 2 −CH 2 −Si)、
δ3.32ppm(s,12H,6CH3−O−CH 2 −Si)、
δ3.55ppm(s,18H,6CH 3 −O−CH2Si)
13C−NMR;δ0.40ppm(Si−CH2−CH2−Si)、
δ61.8ppm(CH3−OCH2−Si)、
δ63.6ppm(CH3O−OCH2−Si)
IR(cm−1);2973〜2809、1465、1422、1193、1101、934〜784
GC−MS;Mw=354
元素分析;C14H34О6Si2
[容量結合型PECVD装置による1,2−ビス[トリス(メトキシメチル)シリル]エタンを用いた炭素含有酸化ケイ素封止膜の成膜]
図1に示した平行平板容量結合型PECVD装置を用いて、ポリエチレンナフタレートフィルム基板上に成膜した。成膜条件は、気化させた1,2−ビス[トリス(メトキシメチル)シリル]エタンの流量50sccm、ヘリウムガスの流量50sccm、チャンバー内圧10Pa、基板温度室温、RF電源電力200W、RF電源周波数13.56MHzの条件で10分間成膜した。
図1に示した平行平板容量結合型PECVD装置を用いてポリエチレンナフタレートフィルム基板上に成膜した。成膜条件は、気化させたテトラメトキシシランの流量50sccm、ヘリウムガスの流量50sccm、チャンバー内圧133Pa、基板温度室温、RF電源電力200W、RF電源周波数13.56MHzの条件で10分間成膜した。
図1に示した平行平板容量結合型PECVD装置を用いてポリエチレンナフタレートフィルム基板上に成膜した。成膜条件は、気化させたテトラメチルシクロテトラシロキサンの流量50sccm、ヘリウムガスの流量50sccm、チャンバー内圧10Pa、基板温度室温、RF電源電力200W、RF電源周波数13.56MHzの条件で10分間成膜した。結果は、膜厚470nmであった。炭素含有酸化ケイ素封止膜の組成は、Si=31atom%、C=20atom%、O=49atom%であった。ガス透過性を測定したところ、酸素透過性0.53cc/m2・day、水透過性0.29g/m2・dayであった。また全光線透過率は88.5%、線膨張係数は20ppm/deg.、表面粗さは1.3nmであった。
図1に示した平行平板容量結合型PECVD装置を用いて、ポリエチレンナフタレートフィルム基板上に成膜した。成膜条件は、気化させたヘキサメチルジシロキサンの流量50sccm、ヘリウムガスの流量50sccm、チャンバー内圧10Pa、基板温度室温、RF電源電力200W、RF電源周波数13.56MHzの条件で10分間成膜した。結果は、膜厚493nmであった。炭素含有酸化ケイ素封止膜の組成は、Si=25atom%、C=41atom%、O=34atom%であった。ガス透過性を測定したところ、酸素透過性2.01cc/m2・day、水透過性0.70g/m2・dayであった。また全光線透過率は88.0%、線膨張係数は20ppm/deg.、表面粗さは1.5nmであった。
使用したポリエチレンナフタレートフィルム基板のガス透過性、全光線透過率、線膨張係数及び表面粗さを測定した。酸素透過性21.0cc/m2・day、水透過性6.70g/m2・dayであった。また全光線透過率は86.9%、線膨張係数は35ppm/deg.、表面粗さは1.4nmであった。
2 PECVDチャンバー
3 シャワーヘッドを有する上部電極
4 下部電極
5 薄膜形成用基板
6 マッチング回路
7 RF電源
8 温度制御装置
9 気化器
10 液体流量制御装置
11 気体流量制御装置
12 容器
13 原料化合物
14 不活性ガスを気化器経由でPECVD装置チャンバー内に供給する為の配管
15 不活性ガスにより加圧する配管
16 排気装置
17 アース
18 アース
19 誘導結合型リモートPECVD装置
20 PECVDチャンバー
21 コイル
22 石英管
23 ヒーター部
24 薄膜形成用基板
25 マッチング回路
26 RF電源
27 温度制御装置
28 気化器
29 液体流量制御装置
30 気体流量制御装置
31 シャワーヘッド
32 容器
33 原料化合物
34 不活性ガスを気化器経由でPECVD装置チャンバー内に供給する為の配管
35 不活性ガスにより加圧する配管
36 排気装置
37 アース
38 マイクロ波PECVD装置
39 石英製チャンバー
40 薄膜形成用基板
41 ヒーター部
42 温度制御装置
43 気化器
44 液体流量制御装置
45 気体流量制御装置
46 シャワーヘッド
47 容器
48 原料化合物
49 不活性ガスを気化器経由でPECVD装置チャンバー内に供給する為の配管
50 不活性ガスにより加圧する配管
51 マッチング回路
52 マイクロ波発信器
53 マイクロ波反射板
54 排気装置
Claims (23)
- 少なくとも一つのメトキシアルキルがケイ素原子に直結した構造を有する直鎖状有機ケイ素化合物を原料として用い、化学気相成長法により成膜して得られることを特徴とする、炭素含有酸化ケイ素膜。
- 化学気相成長法が、プラズマ励起化学気相成長法である、請求項1〜3いずれかに記載の膜。
- 化学気相成長法が、触媒化学気相成長法である、請求項1〜3いずれかに記載の膜。
- 請求項1乃至5のいずれかに記載の膜を、さらに熱処理、紫外線照射処理または電子線処理して得られることを特徴とする膜。
- 請求項1乃至請求項6のいずれかに記載の膜からなる封止膜。
- 請求項7に記載の封止膜をガスバリア層として用いることを特徴とするガスバリア部材。
- 請求項7に記載の封止膜、または請求項8に記載のガスバリア部材を含んでなることを特徴とするフラットパネルディスプレイデバイス。
- 請求項7に記載の封止膜を含んでなることを特徴とする半導体デバイス。
- トリス(メトキシメチル)エチルシラン、トリス(メトキシメチル)n−プロピルシラン、トリス(メトキシメチル)イソプロピルシラン、トリス(メトキシメチル)n−ブチルシラン、トリス(メトキシメチル)イソブチルシラン、トリス(メトキシメチル)sec−ブチルシラン、トリス(メトキシメチル)n−ペンチルシラン、トリス(メトキシメチル)sec−アミルシラン、トリス(メトキシメチル)シクロペンチルシラン、トリス(メトキシメチル)n−ヘキシルシラン、トリス(メトキシメチル)シクロヘキシルシラン、トリス(メトキシメチル)ビニルシラン、トリス(メトキシメチル)アリルシラン、トリス(メトキシメチル)フェニルシラン、
ビス(メトキシメチル)ジメチルシラン、ビス(メトキシメチル)ジエチルシラン、ビス(メトキシメチル)ジn−プロピルシラン、ビス(メトキシメチル)ジイソプロピルシラン、ビス(メトキシメチル)ジn−ブチルシラン、ビス(メトキシメチル)ジイソブチルシラン、ビス(メトキシメチル)ジsec−ブチルシラン、ビス(メトキシメチル)ジn−ペンチルシラン、ビス(メトキシメチル)ジsec−アミルシラン、ビス(メトキシメチル)ジシクロペンチルシラン、ビス(メトキシメチル)ジn−ヘキシルシラン、ビス(メトキシメチル)ジシクロヘキシルシラン、ビス(メトキシメチル)ジビニルシラン、ビス(メトキシメチル)ジアリルシラン、ビス(メトキシメチル)ジフェニルシラン、
トリメチル(メトキシメチルシラン)、トリエチル(メトキシメチル)シラン、トリn−プロピル(メトキシメチル)シラン、トリイソプロピル(メトキシメチル)シラン、トリn−ブチル(メトキシメチル)シラン、トリイソブチル(メトキシメチル)シラン、トリsec−ブチル(メトキシメチル)シラン、トリn−ペンチル(メトキシメチル)シラン、トリsec−アミル(メトキシメチル)シラン、トリシクロペンチル(メトキシメチル)シラン、トリn−ヘキシル(メトキシメチル)シラン、トリシクロヘキシル(メトキシメチル)シラン、トリビニル(メトキシメチル)シラン、トリアリル(メトキシメチル)シラン、トリフェニル(メトキシメチル)シラン、
イソプロピルメチルビス(メトキシメチル)シラン、イソプロピルエチルビス(メトキシメチル)シラン、イソプロピルビニルビス(メトキシメチル)シラン、
1,3−ビス(メトキシメチル)−1,3−ジメチル−1,3−ジメトキシジシロキサン、1,3−ビス(メトキシエチル)−1,3−ジメチル−1,3−ジメトキシジシロキサン、
1,3,5−トリス(メトキシメチル)−1,3,5−トリメチル−1,5−ジメトキシトリシロキサン、1,3,5−トリス(メトキシエチル)−1,3,5−トリメチル−1,5−ジメトキシトリシロキサン、
1,3,5,7−テトラキス(メトキシメチル)−1,3,5,7−テトラメチル−1,7−ジメトキシテトラシロキサン、2,4,6,8−テトラキス(メトキシエチル)−2,4,6,8−テトラメチルシクロテトラシロキサン - 化学気相成長法が、プラズマ励起化学気相成長法である、請求項13に記載の膜。
- 化学気相成長法が、触媒化学気相成長法である、請求項13に記載の膜。
- 請求項13乃至15のいずれかに記載の膜を、さらに熱処理、紫外線照射処理または電子線処理して得られることを特徴とする膜。
- 請求項13乃至16のいずれかに記載の膜からなる封止膜。
- 請求項17に記載の封止膜をガスバリア層として用いることを特徴とするガスバリア部材。
- 請求項17に記載の封止膜、または請求項18に記載のガスバリア部材を含んでなることを特徴とするフラットパネルディスプレイデバイス。
- 請求項17に記載の封止膜を含んでなることを特徴とする半導体デバイス。
- ケイ素原子間がアルキレンオキシ鎖で結合された構造を有する請求項1、2、3、または13記載の炭素含有酸化ケイ素膜。
- ケイ素原子間がアルキレンオキシ鎖で結合された構造を有する請求項21に記載の封止膜。
- 水透過性が5×10−3g/m2・day以下であることを特徴とする請求項18記載のガスバリア部材。
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