JP2016035983A - Support jig for semiconductor wafer and manufacturing method for the same - Google Patents

Support jig for semiconductor wafer and manufacturing method for the same Download PDF

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JP2016035983A
JP2016035983A JP2014158768A JP2014158768A JP2016035983A JP 2016035983 A JP2016035983 A JP 2016035983A JP 2014158768 A JP2014158768 A JP 2014158768A JP 2014158768 A JP2014158768 A JP 2014158768A JP 2016035983 A JP2016035983 A JP 2016035983A
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semiconductor wafer
adhesive
support substrate
support
jig
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小田嶋　智
Satoshi Odajima
智 小田嶋
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Shin Etsu Polymer Co Ltd
Shin Etsu Chemical Co Ltd
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Shin Etsu Chemical Co Ltd
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Abstract

PROBLEM TO BE SOLVED: To provide an inexpensive semiconductor wafer support jig that does not hinder a semiconductor wafer from being safely mounted and demounted and can exclude possibilities causing complication of the construction of the jig and complication of manufacturing.SOLUTION: A semiconductor wafer support jig has a support board 1 confronting a thin semiconductor wafer, and an adhesive layer 10 which freely detachably adheres to the semiconductor wafer. The support board 1 is formed in a flat-ring shape having substantially the same size as the semiconductor wafer. The surface of the support board 1 is provided with plural adhesive layers 10 which directly adhere to the confronting surface peripheral edge portion of the semiconductor wafer, and the plural adhesive layers 10 are arranged at predetermined intervals in the peripheral direction of the support board 1. Plural non-adhesive areas 13 which do not adhere to the surface peripheral edge portion of the semiconductor wafer are formed to be compartmented among the plural adhesive layers 10. Plural adhesive layers 10 are formed and arranged on a part of the surface of the support board 1 to suppress the adhesion range to a necessary and sufficient range, so that the thin fragile semiconductor wafer can be safely and easily exfoliated.SELECTED DRAWING: Figure 1

Description

本発明は、半導体デバイスの製造工程で薄く撓み易い半導体ウェーハを安全に取り扱うことのできる簡易な半導体ウェーハ用サポート治具及びその製造方法に関するものである。   The present invention relates to a simple semiconductor wafer support jig capable of safely handling a thin and easily bent semiconductor wafer in a semiconductor device manufacturing process, and a method for manufacturing the same.

半導体ウェーハは、製造工程の前工程が終了すると、薄い半導体パッケージに適合させる観点から、バックグラインド工程で１００μｍ以下の薄さに研削され、ダイシング工程等に供されるが、バックグラインドに伴い非常に薄く撓み易く、破損し易くなるので、そのままの状態では、後の作業に支障を来たすこととなる。そこで、バックグラインドされた薄い半導体ウェーハは、専用の治具に保持され、強度や剛性を確保した状態で取り扱われる。   When the pre-process of the manufacturing process is completed, the semiconductor wafer is ground to a thickness of 100 μm or less in the back grinding process from the viewpoint of adapting to a thin semiconductor package, and is subjected to a dicing process, etc. Since it is thin and easily bent and easily damaged, in the state as it is, it hinders subsequent operations. Therefore, the back-ground thin semiconductor wafer is held by a dedicated jig and handled in a state in which strength and rigidity are ensured.

この種の治具としては、図示しないが、例えば（１）剛性のリングに半導体ウェーハを仮接着剤やハンダを介して支持させ、リングと半導体ウェーハとを一体化して強度や剛性を増大させ、仮接着剤やハンダの融点以下で取り扱うタイプ、（２）サポート基板の表面と可撓性の粘着膜層の弱粘着面とを粘着し、粘着膜層の強粘着面と薄い半導体ウェーハとを着脱自在に粘着し、サポート基板と半導体ウェーハとを一体化して強度や剛性を増大させるタイプ、（３）耐熱板に粘着膜層を一体化してその粘着膜層の表面に薄い半導体ウェーハ用の複数の保持突起を立設し、この複数の保持突起の間に空気流通用の隙間を形成し、粘着膜層の表面周縁部に、半導体ウェーハの周縁部よりも外側に位置する周壁を周設するとともに、この周壁に、半導体ウェーハの周縁部を支持する複数の支持櫛歯を配列して隣接する支持櫛歯と支持櫛歯との間に空気流通空間を形成するタイプ等があげられる（特許文献１、２参照）。   As a jig of this type, although not shown, for example, (1) a semiconductor ring is supported on a rigid ring via a temporary adhesive or solder, and the ring and the semiconductor wafer are integrated to increase strength and rigidity. A type that is handled below the melting point of temporary adhesive or solder. (2) Adhesion between the surface of the support substrate and the weak adhesive surface of the flexible adhesive film layer, and attachment / detachment of the strong adhesive surface of the adhesive film layer and the thin semiconductor wafer. A type that adheres freely and integrates the support substrate and the semiconductor wafer to increase the strength and rigidity. (3) A plurality of thin film semiconductor wafers on the surface of the adhesive film layer by integrating the adhesive film layer on the heat-resistant plate. A holding protrusion is erected, a gap for air circulation is formed between the plurality of holding protrusions, and a peripheral wall located outside the peripheral edge of the semiconductor wafer is provided around the peripheral edge of the surface of the adhesive film layer. , Semi-conductor Type or the like to form an air flow space between the support comb adjacent by arranging a plurality of support comb which supports the peripheral portion of the wafer and the support comb the like (see Patent Documents 1 and 2).

特開２０１２−３３７３７号公報JP 2012-33737 A 特開２０１２−５９７４８号公報JP 2012-59748 A

しかしながら、（１）のタイプの場合には、最終的には仮接着剤やハンダを溶融させて半導体ウェーハをリングから取り外さなければならないので、手間がかかり、作業性が非常に悪いという問題がある。   However, in the case of the type (1), it is necessary to finally melt the temporary adhesive and solder and remove the semiconductor wafer from the ring, which is troublesome and the workability is very poor. .

また、（２）のタイプの場合には、半導体ウェーハの強度や剛性を増大させたり、半導体ウェーハを簡単に脱着できる等、優れた効果が期待できるものの、サポート基板の全表面を被覆するよう大きな粘着膜層を粘着し、この粘着膜層の強粘着面に半導体ウェーハの対向全面を隙間なく強く密着するので、粘着膜層から薄く脆い半導体ウェーハを安全、かつ容易に剥離できないことがある。このときには、半導体ウェーハの安全な着脱に支障を来し、半導体ウェーハが損傷する事態が考えられる。また、大きく広い粘着膜層を使用するので、半導体ウェーハの対向全面を有効に保護することができるものの、製造コストを削減できない事態が予想される。   In the case of the type (2), an excellent effect can be expected, such as increasing the strength and rigidity of the semiconductor wafer, and allowing the semiconductor wafer to be easily detached, but it is large enough to cover the entire surface of the support substrate. Since the adhesive film layer is adhered and the entire opposing surface of the semiconductor wafer is firmly adhered to the strongly adhesive surface of the adhesive film layer without any gap, a thin and brittle semiconductor wafer may not be safely and easily peeled off from the adhesive film layer. At this time, it is conceivable that the semiconductor wafer is damaged due to an obstacle to the safe mounting and dismounting of the semiconductor wafer. In addition, since a large and wide adhesive film layer is used, it is possible to effectively protect the entire opposing surface of the semiconductor wafer, but it is expected that the manufacturing cost cannot be reduced.

また、（３）のタイプの場合には、優れた効果が期待できるものの、粘着膜層の表面に複数の保持突起を立設したり、周壁に、半導体ウェーハの周縁部を支持する複数の支持櫛歯を配列して隣接する支持櫛歯間に空気流通空間を形成するので、治具の構成の複雑化や製造の煩雑化を招くおそれが考えられる。   In the case of the type (3), although excellent effects can be expected, a plurality of holding protrusions are provided on the surface of the adhesive film layer, or a plurality of supports for supporting the peripheral edge of the semiconductor wafer on the peripheral wall. Since the comb teeth are arranged and an air circulation space is formed between the adjacent support comb teeth, there is a possibility that the configuration of the jig is complicated and the manufacturing is complicated.

本発明は上記に鑑みなされたもので、半導体ウェーハの安全な着脱に支障を来すことが少なく、治具の構成の複雑化や製造の煩雑化を招くおそれを排除することのできる安価な半導体ウェーハ用サポート治具及びその製造方法を提供することを目的としている。   The present invention has been made in view of the above, and is an inexpensive semiconductor that is unlikely to cause troubles in the safe attachment and detachment of a semiconductor wafer, and can eliminate the risk of complicating the structure of a jig and complicating manufacturing. An object of the present invention is to provide a wafer support jig and a manufacturing method thereof.

本発明においては上記課題を解決するため、薄い半導体ウェーハに対向するサポート基板と、このサポート基板に設けられて半導体ウェーハに着脱自在に粘着する粘着層とを備えたものであって、
サポート基板を半導体ウェーハとおおよそ同じ大きさに形成し、サポート基板の両面のうち少なくとも片面に、半導体ウェーハの対向する対向面の周縁部付近に直接粘着する複数の粘着層を設け、この複数の粘着層をサポート基板の周方向に所定の間隔で配列するとともに、複数の粘着層の間に、半導体ウェーハの対向面周縁部付近に粘着しない複数の非粘着領域を形成したことを特徴としている。 In order to solve the above-mentioned problems in the present invention, a support substrate facing a thin semiconductor wafer, and an adhesive layer provided on the support substrate and detachably adhered to the semiconductor wafer,
The support substrate is formed to be approximately the same size as the semiconductor wafer, and a plurality of adhesive layers that directly adhere to the periphery of the opposing surface of the semiconductor wafer are provided on at least one side of the support substrate. The layers are arranged at predetermined intervals in the circumferential direction of the support substrate, and a plurality of non-adhesive regions that do not adhere to each other are formed between the plurality of adhesive layers in the vicinity of the periphery of the opposing surface of the semiconductor wafer.

なお、サポート基板を、平面リング形状あるいは半導体ウェーハと同形状に形成し、サポート基板の周縁部を半導体ウェーハの周縁部に揃えることができる。
また、サポート基板の周縁部に、半導体ウェーハ用の取り外し突起と情報把握切り欠きの少なくともいずれか一方を設けることができる。
また、サポート基板の周縁部周方向に、加工用の孔を所定の間隔で複数穿孔することもできる。 The support substrate can be formed in a planar ring shape or the same shape as the semiconductor wafer, and the peripheral portion of the support substrate can be aligned with the peripheral portion of the semiconductor wafer.
In addition, at least one of a removal projection for semiconductor wafer and an information grasping cutout can be provided on the peripheral edge of the support substrate.
In addition, a plurality of processing holes can be drilled at a predetermined interval in the circumferential direction of the periphery of the support substrate.

また、複数の非粘着領域のうち、二箇所の非粘着領域を、半導体ウェーハ用の剥離開始部と剥離終了部とし、これら剥離開始部と剥離終了部とを１８０°の間隔で対向させることが可能である。
また、粘着層を円弧形状の線条としてその端部付近にサポート基板の幅方向に広がる幅広部を拡大形成することが可能である。 In addition, two non-adhesive regions of the plurality of non-adhesive regions are defined as a separation start portion and a separation end portion for a semiconductor wafer, and the separation start portion and the separation end portion are opposed to each other at an interval of 180 °. Is possible.
Moreover, it is possible to enlarge and form the wide part which spreads in the width direction of a support substrate in the vicinity of the edge part by making the adhesion layer into an arc-shaped line.

また、本発明においては上記課題を解決するため、請求項１、２、又は３に記載した半導体ウェーハ用サポート治具を金型により製造する製造方法であって、
サポート基板を半導体ウェーハとおおよそ同じ大きさに形成し、サポート基板の両面のうち少なくとも片面に、熱硬化性の複数の粘着材料を塗布し、この複数の粘着材料をサポート基板の周方向に所定の間隔で非連続に配列するとともに、この複数の粘着材料の間に複数の隙間を形成し、複数の粘着材料が塗布されたサポート基板を金型にインサートして型締めした後、加熱することにより、複数の粘着材料を粘着層に形成し、複数の隙間を非粘着領域とすることを特徴としている。 Further, in the present invention, in order to solve the above-mentioned problem, a manufacturing method for manufacturing a semiconductor wafer support jig according to claim 1, 2, or 3 by a mold,
The support substrate is formed to be approximately the same size as the semiconductor wafer, and a plurality of thermosetting adhesive materials are applied to at least one of both surfaces of the support substrate, and the plurality of adhesive materials are applied in a predetermined direction in the circumferential direction of the support substrate. By discontinuously arranging at intervals, forming a plurality of gaps between the plurality of adhesive materials, inserting a support substrate coated with a plurality of adhesive materials into a mold, clamping, and then heating A plurality of adhesive materials are formed in the adhesive layer, and a plurality of gaps are defined as non-adhesive regions.

なお、サポート基板の少なくとも片面に、粘度が１０〜１００Ｐａ・ｓの粘着材料を塗布し、この粘着材料が金型のキャビティ内を満たさないよう押し広げて加熱することにより、粘着材料を粘着層に形成することができる。
また、複数の粘着材料を粘着層に形成した後、金型から取り外した半導体ウェーハ用サポート治具を真空のベーキングオーブンに投入し、空気を窒素ガスに置換して所定の条件下でベーキングすることができる。 An adhesive material having a viscosity of 10 to 100 Pa · s is applied to at least one surface of the support substrate, and the adhesive material is spread and heated so as not to fill the cavity of the mold. Can be formed.
Also, after forming multiple adhesive materials on the adhesive layer, the semiconductor wafer support jig removed from the mold is placed in a vacuum baking oven, and the air is replaced with nitrogen gas and baked under specified conditions. Can do.

ここで、特許請求の範囲における半導体ウェーハには、少なくともφ１００、１５０、２００、３００、４５０ｍｍタイプの各種半導体ウェーハ（シリコンウェーハや化合物半導体ウェーハ等）が含まれる。この半導体ウェーハは、複数の粘着層との間に空間を区画し、この区画する空間がサポート基板の外部と非粘着領域を介して連通することが好ましい。半導体ウェーハの周縁部には、位置や結晶方位を合わせるためのオリフラやノッチの切り欠きがあってもなくても良い。また、オリフラやノッチの代わりに、半導体ウェーハの厚さ方向の周縁部に、レーザマーキングで位置や結晶方位を合わせるためのマーキングが施されていても良い。   Here, the semiconductor wafers in the claims include at least various semiconductor wafers (such as silicon wafers and compound semiconductor wafers) of φ100, 150, 200, 300, and 450 mm types. In this semiconductor wafer, it is preferable that a space is defined between a plurality of adhesive layers, and the partitioned space communicates with the outside of the support substrate via a non-adhesive region. The peripheral edge of the semiconductor wafer may or may not have an orientation flat or notch notch for matching the position and crystal orientation. Further, instead of the orientation flat or the notch, a marking for aligning the position and crystal orientation by laser marking may be applied to the peripheral portion in the thickness direction of the semiconductor wafer.

サポート基板は、透明、不透明、半透明のいずれでも良く、半導体ウェーハと同形に形成したり、半導体ウェーハとおおよそ同形と認められる形状に形成したりすることができる。また、サポート基板の周縁部に半導体ウェーハ用の取り外し突起や情報把握切り欠きを設ける場合、これらを非粘着領域の剥離開始部と近接させることが可能である。また、複数の粘着層は、半導体ウェーハの表面に直接粘着しても良いし、裏面に直接粘着しても良い。各粘着層は、例えば半円弧状やＣ字形状等に配列することが可能である。また、複数の非粘着領域は、少なくとも２箇所あることが好ましく、２〜４箇所等に増減することができる。さらに、粘着層の幅広部は、たとえば平面半円形、半楕円形、矩形等に形成することができる。   The support substrate may be transparent, opaque, or translucent, and can be formed in the same shape as the semiconductor wafer or in a shape that is recognized as being approximately the same shape as the semiconductor wafer. Moreover, when providing the removal protrusion and information grasping notch for semiconductor wafers in the peripheral part of a support substrate, it is possible to make these adjoin to the peeling start part of a non-adhesion area | region. Further, the plurality of adhesive layers may be directly adhered to the front surface of the semiconductor wafer or directly adhered to the back surface. Each adhesive layer can be arranged in, for example, a semicircular arc shape or a C-shape. Moreover, it is preferable that there are at least two non-adhesive regions, and the number of non-adhesive regions can be increased or decreased to 2 to 4 or the like. Furthermore, the wide part of the adhesive layer can be formed in, for example, a planar semicircular shape, a semi-elliptical shape, a rectangular shape, or the like.

本発明によれば、サポート基板の片面の全面ではなく、少なくとも片面の一部に、半導体ウェーハの対向面周縁部付近に直接粘着する複数の粘着層を部分的に形成し、粘着範囲を縮小するので、粘着層から薄く脆い半導体ウェーハを安全、かつ容易に素早く剥離することができる。また、粘着層やその粘着材料が従来よりも狭く小さいので、製造コストの削減が期待できる。また、粘着層に複数の保持突起を立設したり、半導体ウェーハ支持用の複数の支持櫛歯を配列したりする必要もないので、サポート治具の構成や製造方法の簡素化を図ることができる。   According to the present invention, a plurality of adhesive layers that adhere directly to the vicinity of the periphery of the opposing surface of the semiconductor wafer are partially formed on at least a part of one surface of the support substrate, not on the entire surface of one surface, thereby reducing the adhesion range. Therefore, a thin and fragile semiconductor wafer can be safely and easily peeled off quickly from the adhesive layer. Moreover, since the pressure-sensitive adhesive layer and the pressure-sensitive adhesive material are narrower and smaller than conventional ones, a reduction in manufacturing cost can be expected. In addition, since it is not necessary to install a plurality of holding protrusions on the adhesive layer or to arrange a plurality of support combs for supporting a semiconductor wafer, it is possible to simplify the structure of the support jig and the manufacturing method. it can.

本発明によれば、半導体ウェーハの対向面周縁部付近に直接粘着する粘着層を用いるので、半導体ウェーハを安全に着脱することができるという効果がある。また、サポート治具の構成の複雑化や製造の煩雑化を招くおそれを有効に排除し、安価に提供することができるという効果がある。   According to the present invention, since the adhesive layer that adheres directly to the vicinity of the peripheral surface of the semiconductor wafer is used, there is an effect that the semiconductor wafer can be safely attached and detached. Moreover, there is an effect that it is possible to effectively eliminate the possibility of complicating the configuration of the support jig and complicating the manufacturing, and to provide the support jig at a low cost.

請求項２記載の発明によれば、半導体ウェーハ用の剥離開始部が粘着性を有しないので、この剥離開始部を契機に半導体ウェーハとサポート基板との剥離を開始すれば、半導体ウェーハとサポート基板との剥離を迅速、かつ容易に開始することができる。また、剥離開始部と１８０°の角度で対向する半導体ウェーハ用の剥離終了部にも粘着層が存在せず、粘着性を有しないので、この剥離終了部を活用すれば、半導体ウェーハを持ち上げて変形等させる必要がなく、この変形等に伴う半導体ウェーハの破損を防止することができる。   According to the second aspect of the present invention, since the peeling start portion for the semiconductor wafer does not have adhesiveness, if the peeling between the semiconductor wafer and the support substrate is started using this peeling start portion, the semiconductor wafer and the support substrate Can be started quickly and easily. In addition, since there is no adhesive layer at the peeling end portion for the semiconductor wafer facing the peeling start portion at an angle of 180 °, and there is no adhesiveness, if this peeling end portion is utilized, the semiconductor wafer is lifted There is no need to deform the semiconductor wafer, and damage to the semiconductor wafer due to the deformation can be prevented.

請求項３記載の発明によれば、幅広部が粘着層の粘着範囲を部分的に拡大して粘着強度の不足を補うので、粘着層からの半導体ウェーハの脱落を有効に防止することが可能になる。   According to the invention described in claim 3, since the wide part partially expands the adhesive range of the adhesive layer to compensate for the insufficient adhesive strength, it is possible to effectively prevent the semiconductor wafer from falling off the adhesive layer. Become.

請求項５記載の発明によれば、粘度が１０〜１００Ｐａ・ｓの粘着材料を塗布するので、サポート治具の製造時に金型のキャビティ幅方向に粘着材料を適切に流動させることが可能になる。また、金型の間隙に粘着材料が流れ出てバリの生じることが少ないので、バリとの接触に伴う半導体ウェーハの汚染を有効に防止することが可能になる。また、一種類の金型で様々な幅の粘着層に対応することができるので、粘着層の粘着力を容易に微調整することが可能になる。さらに、粘着層にサポート基板の幅方向に広がる幅広部を簡単に形成することができるので、必要に応じ、半導体ウェーハに対する粘着領域を拡大し、粘着性を向上させて半導体ウェーハの脱落を防ぐこともできる。   According to the invention described in claim 5, since the adhesive material having a viscosity of 10 to 100 Pa · s is applied, the adhesive material can be appropriately flowed in the cavity width direction of the mold when the support jig is manufactured. . In addition, since the adhesive material is less likely to flow out into the gaps between the molds and burr is generated, contamination of the semiconductor wafer due to contact with the burr can be effectively prevented. Further, since one type of mold can cope with adhesive layers having various widths, the adhesive force of the adhesive layer can be easily finely adjusted. In addition, a wide part that extends in the width direction of the support substrate can be easily formed in the adhesive layer, so that if necessary, the adhesive area for the semiconductor wafer can be expanded to improve adhesion and prevent the semiconductor wafer from falling off. You can also.

本発明に係る半導体ウェーハ用サポート治具の実施形態を模式的に示す平面説明図である。It is a plane explanatory view showing typically an embodiment of a semiconductor wafer support jig concerning the present invention. 本発明に係る半導体ウェーハ用サポート治具の実施形態を模式的に示す裏面説明図である。It is back surface explanatory drawing which shows typically embodiment of the support jig for semiconductor wafers which concerns on this invention. 図１のＩＩＩ部を示す要部拡大説明図である。It is a principal part enlarged explanatory view which shows the III section of FIG. 本発明に係る半導体ウェーハ用サポート治具の実施形態における半導体ウェーハと半導体ウェーハ用サポート治具とを模式的に示す説明図である。It is explanatory drawing which shows typically the semiconductor wafer in the embodiment of the support jig for semiconductor wafers concerning this invention, and the support jig for semiconductor wafers. 図４のＶ部を示す要部拡大説明図である。FIG. 5 is a main part enlarged explanatory view showing a V part of FIG. 4. 本発明に係る半導体ウェーハ用サポート治具及びその製造方法の実施形態における金型の離型処理プレートを模式的に示す平面説明図である。It is a plane explanatory view showing typically the mold release processing plate in the embodiment of the support jig for semiconductor wafer concerning the present invention, and its manufacturing method. 図６の断面説明図である。FIG. 7 is a cross-sectional explanatory view of FIG. 6. 本発明に係る半導体ウェーハ用サポート治具及びその製造方法の実施形態における金型の位置決めプレートを模式的に示す平面説明図である。It is a plane explanatory view showing typically a mold positioning plate in an embodiment of a semiconductor wafer support jig and its manufacturing method according to the present invention. 図８のＩＸ−ＩＸ線断面説明図である。It is IX-IX sectional view explanatory drawing of FIG. 本発明に係る半導体ウェーハ用サポート治具及びその製造方法の実施形態における粘着材料と金型のキャビティとの関係を模式的に示す断面説明図である。It is sectional explanatory drawing which shows typically the relationship between the adhesive material and cavity of a metal mold | die in embodiment of the support jig for semiconductor wafers which concerns on this invention, and its manufacturing method. 本発明に係る半導体ウェーハ用サポート治具の第２の実施形態を模式的に示す平面説明図である。It is plane explanatory drawing which shows typically 2nd Embodiment of the support jig for semiconductor wafers which concerns on this invention. 本発明に係る半導体ウェーハ用サポート治具の第３の実施形態を模式的に示す平面説明図である。It is a plane explanatory view showing a 3rd embodiment of a support jig for semiconductor wafers concerning the present invention typically. 本発明に係る半導体ウェーハ用サポート治具の第４の実施形態を模式的に示す平面説明図である。It is a plane explanatory view showing typically a 4th embodiment of a support jig for semiconductor wafers concerning the present invention.

以下、図面を参照して本発明の好ましい実施の形態を説明すると、本実施形態における半導体ウェーハ用サポート治具は、図１ないし図１０に示すように、薄い半導体ウェーハＷに対向するサポート基板１と、半導体ウェーハＷに着脱自在に粘着する複数の粘着層１０とを備え、サポート基板１の表面の一部に、半導体ウェーハＷの表面周縁部に粘着する複数の粘着層１０を設け、この複数の粘着層１０をサポート基板１の周方向に配列し、複数の粘着層１０の間に、半導体ウェーハＷに粘着しない複数の非粘着領域１３を形成するようにしている。   Hereinafter, a preferred embodiment of the present invention will be described with reference to the drawings. A support jig for a semiconductor wafer in this embodiment is a support substrate 1 facing a thin semiconductor wafer W as shown in FIGS. And a plurality of adhesive layers 10 that are detachably adhered to the semiconductor wafer W, and a plurality of adhesive layers 10 that adhere to the peripheral edge of the surface of the semiconductor wafer W are provided on a part of the surface of the support substrate 1. The adhesive layers 10 are arranged in the circumferential direction of the support substrate 1, and a plurality of non-adhesive regions 13 that do not adhere to the semiconductor wafer W are formed between the plurality of adhesive layers 10.

半導体ウェーハＷは、図４に示すように、例えばφ２００ｍｍのシリコンウェーハからなり、表面に回路パターンが形成され、裏面がバックグラインド工程でバックグラインドされることにより、７２５μｍの厚さから１００μｍ以下の薄さ、例えば７５〜８５μｍ、好ましくは８０μｍ程度の薄さに形成される。この半導体ウェーハＷのバックグラインドされた粗い裏面は、所定のエッチング処理により、平滑な面に処理され、その後、電極用の金属薄膜がスパッタリング等により成膜形成される。   As shown in FIG. 4, the semiconductor wafer W is made of, for example, a silicon wafer having a diameter of 200 mm, a circuit pattern is formed on the front surface, and the back surface is back-ground in the back-grinding process, thereby reducing the thickness from 725 μm to 100 μm or less. For example, it is formed in a thickness of about 75 to 85 μm, preferably about 80 μm. The back-ground rough back surface of the semiconductor wafer W is processed into a smooth surface by a predetermined etching process, and then a metal thin film for electrodes is formed by sputtering or the like.

半導体ウェーハＷの周縁部、具体的には半導体ウェーハＷの周縁から半径内方向に４ｍｍあるいは５ｍｍまでの部分は、半導体ウェーハＷに関連する情報がレーザ印字され、最終的には不要箇所として除去されることにより、半導体デバイスの製品化に支障を来さないようになっている。この半導体ウェーハＷの周縁部には、結晶方位の判別や位置合わせを容易にする直線的なオリフラが形成されたり、あるいは整列を容易にする略半円形のノッチが切り欠かれたりする。   Information related to the semiconductor wafer W is laser-printed at the peripheral edge of the semiconductor wafer W, specifically, the portion from the peripheral edge of the semiconductor wafer W to 4 mm or 5 mm radially inward, and finally removed as an unnecessary portion. As a result, it does not hinder the commercialization of semiconductor devices. At the peripheral edge of the semiconductor wafer W, a linear orientation flat that facilitates discrimination and alignment of crystal orientation is formed, or a substantially semicircular notch that facilitates alignment is cut out.

サポート基板１は、図１や図２に示すように、所定の材料により半導体ウェーハＷと略同じ大きさの平面リング形に形成され、内周縁の後方（図１の下方）と両側とがそれぞれ直線的に形成されており、表面が半導体ウェーハＷの表面周縁部に対向する。このサポート基板１の材料としては、特に限定されるものではないが、例えばガラス強化エポキシ樹脂、ポリエチレンテレフタレート、ポリカーボネート等の板があげられる。これらの中でも、半導体ウェーハ用サポート治具が加熱工程で使用される場合には、強度・熱伝導率、耐熱性、電気特性等に優れるガラス強化エポキシ樹脂製の板が好適に使用される。   As shown in FIG. 1 and FIG. 2, the support substrate 1 is formed into a planar ring shape having a size substantially the same as that of the semiconductor wafer W by using a predetermined material. It is formed in a straight line, and the surface faces the peripheral edge of the surface of the semiconductor wafer W. The material of the support substrate 1 is not particularly limited, and examples thereof include a glass reinforced epoxy resin, polyethylene terephthalate, and polycarbonate plate. Among these, when the semiconductor wafer support jig is used in the heating step, a plate made of glass-reinforced epoxy resin having excellent strength, thermal conductivity, heat resistance, electrical characteristics, and the like is preferably used.

サポート基板１は、必要な強度を確保しながら既存の半導体製造装置や治具に容易にセットすることができるよう、０．５５〜０．６５ｍｍ、好ましくは０．６０ｍｍ程度の薄さに形成される。また、視認性を向上させたい場合には有彩色に着色され、半導体ウェーハＷの状態を完全に把握したい場合には透明に形成される。   The support substrate 1 is formed to a thickness of 0.55 to 0.65 mm, preferably about 0.60 mm so that it can be easily set on an existing semiconductor manufacturing apparatus or jig while ensuring the necessary strength. The Further, when it is desired to improve the visibility, it is colored in a chromatic color, and when it is desired to completely grasp the state of the semiconductor wafer W, it is formed transparent.

サポート基板１の周縁部、例えば外周縁の前方（図１の上方）には同図や図２に示すように、非粘着領域１３に近接する平面矩形の取り外し突起２が半径外方向に向けて突出形成され、この取り外し突起２が半導体ウェーハＷとサポート基板１との剥離の際に手動操作される。また、サポート基板１の周縁部、例えば外周縁の後方（図１の下方）と両側とには、非粘着領域１３に近接する情報把握切り欠き３が９０°の間隔でそれぞれ周方向に切り欠かれ、これら複数の情報把握切り欠き３の少なくともいずれかが半導体ウェーハＷの周縁部の情報やノッチを露出させ、情報の読み取り等を可能にする。   As shown in FIG. 2 and FIG. 2, a planar rectangular removal protrusion 2 adjacent to the non-adhesive region 13 is directed radially outward at the peripheral edge of the support substrate 1, for example, in front of the outer peripheral edge (upward in FIG. 1). The protrusions 2 are formed so as to be manually operated when the semiconductor wafer W and the support substrate 1 are peeled off. In addition, information grasping cutouts 3 adjacent to the non-adhesive region 13 are cut in the circumferential direction at intervals of 90 ° at the peripheral edge of the support substrate 1, for example, at the rear (lower side in FIG. 1) and both sides of the outer peripheral edge. In addition, at least one of the plurality of information grasping cutouts 3 exposes information and notches on the peripheral edge of the semiconductor wafer W, thereby enabling reading of information and the like.

このようなサポート基板１は、半導体ウェーハＷの表面周縁部に対向し、外周縁が半導体ウェーハＷの周縁に揃えられると、中空から半導体ウェーハＷの表面周縁部以外の表面を視認可能に露出させ、この表面周縁部以外の表面に対する各種の処理や加工を可能にする。   Such a support substrate 1 faces the peripheral edge of the surface of the semiconductor wafer W, and when the outer peripheral edge is aligned with the peripheral edge of the semiconductor wafer W, the surface other than the peripheral edge of the semiconductor wafer W is exposed from the hollow so as to be visible. Various treatments and processing can be performed on the surface other than the peripheral portion of the surface.

複数の粘着層１０は、図１や図５に示すように、サポート基板１の表面に所定の間隔で積層して粘着され、半導体ウェーハＷの対向する表面周縁部に剥離可能に直接粘着することにより、半導体ウェーハＷの表面との間に狭く低い空間を区画する。この複数の粘着層１０は、取り外し突起２と複数の情報把握切り欠き３とを挟むようサポート基板１の周方向に略等間隔に配列され、隣接する粘着層１０と粘着層１０との間に、半導体ウェーハＷの表面周縁部に粘着しない複数（本実施形態では４箇所）の非粘着領域１３が区画形成される。   As shown in FIG. 1 and FIG. 5, the plurality of adhesive layers 10 are laminated and adhered to the surface of the support substrate 1 at a predetermined interval, and are directly adhered to the opposing surface peripheral portions of the semiconductor wafer W so as to be peelable. Thus, a narrow and low space is partitioned between the surface of the semiconductor wafer W. The plurality of adhesive layers 10 are arranged at substantially equal intervals in the circumferential direction of the support substrate 1 so as to sandwich the removal protrusion 2 and the plurality of information grasping notches 3, and between the adjacent adhesive layers 10 and 10. A plurality of (four in this embodiment) non-adhesive regions 13 that do not adhere to the peripheral edge of the surface of the semiconductor wafer W are defined.

各粘着層１０は、図１や図３等に示すように、円弧形に湾曲した細長い線条とされ、サポート基板１の表面外周縁寄りに位置し、半導体ウェーハＷの表面に粘着しても、回路パターンに汚染等の問題の生じない部分、具体的には半導体ウェーハＷの表面周縁から半径内方向に４ｍｍ又は５ｍｍまでの部分に直接粘着する。   As shown in FIG. 1 and FIG. 3, each adhesive layer 10 is formed as an elongated linear line curved in an arc shape, and is located near the outer peripheral edge of the support substrate 1 and adheres to the surface of the semiconductor wafer W. However, the circuit pattern directly adheres to a portion where no problem such as contamination occurs, specifically, a portion from the surface periphery of the semiconductor wafer W to 4 mm or 5 mm in the radial inward direction.

粘着層１０の材料としては、特に限定されるものではないが、例えばシリコーン系やフッ素系の粘着材料１１があげられる（図１０参照）。これらの粘着材料１１の中でも、半導体ウェーハ用サポート治具が加熱工程で使用される場合等を考慮し、耐熱性、難燃性、着脱性等に優れるシリコーン系で熱硬化性の粘着材料１１が好適に用いられる。   The material of the adhesive layer 10 is not particularly limited, and examples thereof include silicone-based and fluorine-based adhesive materials 11 (see FIG. 10). Among these adhesive materials 11, the silicone-based thermosetting adhesive material 11 is excellent in heat resistance, flame retardancy, detachability, etc., considering the case where a semiconductor wafer support jig is used in the heating process. Preferably used.

粘着層１０の厚さは、特に限定されるものではないが、薄過ぎる場合には、サポート基板１の厚さバラツキを十分に吸収することができず、逆に厚過ぎる場合には、熱硬化性の粘着材料１１のアウトガス発生に伴う弊害（例えば、変色等）を防ぐことができないので、０．１ｍｍ程度が好ましい。   The thickness of the adhesive layer 10 is not particularly limited. However, if the thickness is too thin, the thickness variation of the support substrate 1 cannot be sufficiently absorbed. Since the adverse effect (for example, discoloration etc.) accompanying outgas generation of the adhesive material 11 is not prevented, about 0.1 mm is preferable.

複数の粘着層１０のうち、少なくともサポート基板１の外周縁後方側に位置する一対の粘着層１０の末端部には図３に示すように、サポート基板１の幅方向内側に広がる幅広部１２が一体的に拡大形成される。この幅広部１２は、粘着層１０の粘着範囲を部分的に拡大し、粘着強度を向上させて半導体ウェーハＷの脱落を防止するよう機能する。   As shown in FIG. 3, a wide portion 12 that spreads inward in the width direction of the support substrate 1 is provided at the end portions of the pair of adhesive layers 10 located at least on the rear side of the outer peripheral edge of the support substrate 1 among the plurality of adhesive layers 10. It is enlarged and formed integrally. The wide portion 12 functions to partially expand the adhesive range of the adhesive layer 10 and improve the adhesive strength to prevent the semiconductor wafer W from falling off.

複数の非粘着領域１３は、図１に示すように、サポート基板１の外部と連通し、サポート基板１の外周縁の前後に位置する二箇所の非粘着領域１３が半導体ウェーハ用の剥離開始部１４と剥離終了部１５とされる。これら剥離開始部１４と剥離終了部１５とは、１８０°の間隔で相対向し、半導体ウェーハＷの剥離を容易にしたり、剥離時の半導体ウェーハＷの変形に伴う損傷を防止したりする。剥離開始部１４と剥離終了部１５とは、剥離開始部１４が取り外し突起２に近接し、剥離終了部１５の左右両側に粘着層１０の幅広部１２がそれぞれ位置する。   As shown in FIG. 1, the plurality of non-adhesive regions 13 communicate with the outside of the support substrate 1, and the two non-adhesive regions 13 positioned before and after the outer peripheral edge of the support substrate 1 are peeling start portions for a semiconductor wafer. 14 and the peeling end portion 15. The peeling start part 14 and the peeling end part 15 face each other at an interval of 180 ° to facilitate peeling of the semiconductor wafer W or prevent damage due to deformation of the semiconductor wafer W during peeling. As for the peeling start part 14 and the peeling end part 15, the peeling start part 14 comes close to the protrusion 2 and the wide parts 12 of the adhesive layer 10 are located on the left and right sides of the peeling end part 15, respectively.

上記構成において、半導体ウェーハ用サポート治具を図６ないし図９に示す金型２０により製造する場合には、先ず、ガラス強化エポキシ樹脂製の樹脂板を加工して半導体ウェーハＷと同じ大きさのサポート基板１を形成し、このサポート基板１の表面外周縁の周方向に、複数の粘着層１０を後に形成する熱硬化性でペースト状の粘着材料１１を所定の間隔で非連続に塗布するとともに、隣接する粘着材料１１と粘着材料１１との間に、非粘着領域１３用の隙間を複数形成し、各粘着材料１１を細長い線条に湾曲させながら塗布する。   In the above configuration, when the semiconductor wafer support jig is manufactured by the mold 20 shown in FIGS. 6 to 9, first, a resin plate made of glass-reinforced epoxy resin is processed to have the same size as the semiconductor wafer W. A support substrate 1 is formed, and in the circumferential direction of the outer peripheral edge of the support substrate 1, a thermosetting paste-like adhesive material 11 to be formed later is applied non-continuously at predetermined intervals. A plurality of gaps for the non-adhesive region 13 are formed between the adjacent adhesive material 11 and the adhesive material 11, and each adhesive material 11 is applied while being curved into an elongated line.

粘着材料１１を塗布する際には、正確な位置と量とを制御でき、生産性を向上させ得るディスペンサが好適に使用される。このディスペンサは、一定量の粘着材料１１を吐き出しながら高速でスライドするが、粘着層１０の端部に幅広部１２を拡大形成するときには、粘着材料１１の吐き出しの開始段階又は最終段階で遅く制御される。幅広部１２は、全ての粘着層１０の端部に拡大形成することもできるし、特に補強が必要な個所に選択的に拡大形成することも可能である。   When the adhesive material 11 is applied, a dispenser that can control the exact position and amount and can improve productivity is preferably used. The dispenser slides at a high speed while discharging a certain amount of the adhesive material 11, but when the wide portion 12 is enlarged at the end of the adhesive layer 10, the dispenser is controlled slowly at the start or final stage of discharging the adhesive material 11. The The wide portion 12 can be enlarged at the end of all the pressure-sensitive adhesive layers 10, or can be selectively enlarged at a portion requiring reinforcement.

粘着材料１１は、製造時のバリの発生を防止したり、様々な粘着層１０幅の仕様に対応したりすることができるよう、粘着層１０の厚さよりも高く、粘着層１０の幅よりも狭くなるよう塗布される。例えば、粘着層１０の厚さが０．１ｍｍ、粘着層１０の幅が１．５ｍｍの場合、粘着材料１１は、０．１ｍｍを越える高さに塗布され、幅が１．５ｍｍ未満となるよう調整される。また、粘着材料１１の常温常圧下の粘度は、粘着材料１１が金型２０のキャビティ２４の幅方向に適切に流動するよう、１０，０００〜１００，０００〔ｃｐｏｉｓｅ〕、ＳＩ単位系では１０〜１００〔Ｐａ・ｓ〕が好ましい。   The pressure-sensitive adhesive material 11 is higher than the thickness of the pressure-sensitive adhesive layer 10 and larger than the width of the pressure-sensitive adhesive layer 10 so as to prevent generation of burrs at the time of manufacture or to meet various specifications of the width of the pressure-sensitive adhesive layer 10. Applied to narrow. For example, when the thickness of the pressure-sensitive adhesive layer 10 is 0.1 mm and the width of the pressure-sensitive adhesive layer 10 is 1.5 mm, the pressure-sensitive adhesive material 11 is applied to a height exceeding 0.1 mm so that the width is less than 1.5 mm. Adjusted. Further, the viscosity of the adhesive material 11 under normal temperature and normal pressure is 10,000 to 100,000 [cpoise] so that the adhesive material 11 appropriately flows in the width direction of the cavity 24 of the mold 20, and 10 to 10 in the SI unit system. 100 [Pa · s] is preferable.

次いで、複数の粘着材料１１が塗布されたサポート基板１を金型２０の離型処理プレート２１と位置決めプレート２２とにインサートして型締めする。離型処理プレート２１と位置決めプレート２２とは、図６ないし図９に示すように、それぞれ平面多角形に形成され、中央部に、サポート基板１の中空と略同じ大きさの丸い露出口２３がそれぞれ穿孔される。   Next, the support substrate 1 coated with the plurality of adhesive materials 11 is inserted into the mold release processing plate 21 and the positioning plate 22 of the mold 20 and clamped. The release processing plate 21 and the positioning plate 22 are each formed in a planar polygon as shown in FIGS. 6 to 9, and a round exposure port 23 having the same size as the hollow of the support substrate 1 is formed in the center. Each is perforated.

離型処理プレート２１の露出口２３の周縁部付近には図６や図７に示すように、粘着層１０用のキャビティ２４が平面リング形に凹み形成される。このキャビティ２４は、製造時のバリの発生を防いだり、様々な仕様の粘着層１０幅に対応できるよう、想定される粘着層１０の幅よりも広く形成される。例えば、粘着層１０の厚さが０．１ｍｍ、粘着層１０の幅が１．５ｍｍの場合、キャビティ２４は、深さ０．１ｍｍ、幅５ｍｍに凹み形成される。   As shown in FIGS. 6 and 7, a cavity 24 for the adhesive layer 10 is formed in a concave shape in the form of a flat ring in the vicinity of the peripheral edge of the exposure port 23 of the release processing plate 21. The cavity 24 is formed wider than the assumed width of the pressure-sensitive adhesive layer 10 so as to prevent generation of burrs at the time of manufacture and to cope with the width of the pressure-sensitive adhesive layer 10 having various specifications. For example, when the thickness of the adhesive layer 10 is 0.1 mm and the width of the adhesive layer 10 is 1.5 mm, the cavity 24 is formed to have a depth of 0.1 mm and a width of 5 mm.

金型２０を型締めしたら、所定の時間金型２０を加熱する。この際、粘着材料１１は、離型処理プレート２１のキャビティ２４内を満たすことがないよう押し広げて加熱（図１０参照）され、この加熱により、複数の粘着層１０が形成される。また、この複数の粘着層１０の形成に伴い、複数の隙間が非粘着領域１３に区画形成される。複数の粘着層１０を形成したら、金型２０を冷却し、この金型２０を型開きしてサポート基板１を離型処理プレート２１から脱型すれば、半導体ウェーハ用サポート治具を製造することができる。   After the mold 20 is clamped, the mold 20 is heated for a predetermined time. At this time, the adhesive material 11 is spread and heated (see FIG. 10) so as not to fill the cavity 24 of the mold release processing plate 21, and a plurality of adhesive layers 10 are formed by this heating. In addition, with the formation of the plurality of adhesive layers 10, a plurality of gaps are partitioned and formed in the non-adhesive region 13. After forming the plurality of adhesive layers 10, the mold 20 is cooled, the mold 20 is opened, and the support substrate 1 is removed from the mold release processing plate 21, thereby producing a semiconductor wafer support jig. Can do.

なお、金型２０から半導体ウェーハ用サポート治具を脱型したら、この半導体ウェーハ用サポート治具を専用の治具にセットして真空のベーキングオーブンに投入し、空気を窒素ガスに置換した後、所定の条件（例えば、１６０℃、３時間の条件）でベーキングすることが好ましい。こうすれば、熱硬化性粘着材料１１のアウトガス発生に伴う諸問題を防ぐことができる。   After removing the semiconductor wafer support jig from the mold 20, the semiconductor wafer support jig was set in a dedicated jig and placed in a vacuum baking oven, and the air was replaced with nitrogen gas. Baking is preferably performed under predetermined conditions (for example, conditions of 160 ° C. and 3 hours). By doing so, it is possible to prevent various problems associated with outgassing of the thermosetting adhesive material 11.

製造された半導体ウェーハ用サポート治具は、所定の粘着テープに粘着した半導体ウェーハＷの露出した表面に直接粘着されることにより、薄く脆い半導体ウェーハＷと一体化し、強度や剛性を増大させた状態でスパッタリング工程やハンダリフロー工程等に供される。   The manufactured semiconductor wafer support jig is directly adhered to the exposed surface of the semiconductor wafer W adhered to a predetermined adhesive tape, thereby being integrated with the thin and fragile semiconductor wafer W to increase strength and rigidity. Then, it is used for a sputtering process, a solder reflow process, and the like.

これに対し、半導体ウェーハＷからサポート基板１を取り外す場合には、サポート基板１の取り外し突起２を摘まんで引き上げれば、半導体ウェーハＷからサポート基板１を取り外すことができる。この際、取り外し突起２の近傍に位置する剥離開始部１４が粘着性を有しないので、この剥離開始部１４を契機に半導体ウェーハＷとサポート基板１との剥離を迅速に開始することができる。また、剥離開始部１４の反対側に位置する剥離終了部１５も粘着性を有しないので、この剥離終了部１５を利用すれば、半導体ウェーハＷを持ち上げて変形させる必要がなく、この変形に伴う半導体ウェーハＷの破損を有効に防止することができる。   On the other hand, when removing the support substrate 1 from the semiconductor wafer W, the support substrate 1 can be removed from the semiconductor wafer W by grasping and pulling up the removal protrusion 2 of the support substrate 1. At this time, since the peeling start portion 14 located in the vicinity of the removal protrusion 2 does not have adhesiveness, the peeling between the semiconductor wafer W and the support substrate 1 can be quickly started by using the peeling start portion 14 as a trigger. In addition, since the peeling end portion 15 located on the opposite side of the peeling start portion 14 does not have adhesiveness, if this peeling end portion 15 is used, it is not necessary to lift and deform the semiconductor wafer W, and this deformation accompanies this deformation. Damage to the semiconductor wafer W can be effectively prevented.

上記構成によれば、半導体ウェーハＷの加工処理後、仮接着剤やハンダを溶融させて半導体ウェーハＷを取り外す必要が全くないので、半導体ウェーハＷを素早く脱着することができ、作業性を著しく向上させることができる。また、サポート基板１の全表面ではなく、表面の一部に複数の粘着層１０を配列形成して粘着範囲を必要十分な範囲に抑制するので、粘着層１０から薄く脆い半導体ウェーハＷを安全、かつ容易に剥離することができる。したがって、半導体ウェーハＷを安全に着脱することができ、半導体ウェーハＷが損傷する事態を未然に回避することができる。   According to the above configuration, there is no need to remove the semiconductor wafer W by melting the temporary adhesive or solder after the processing of the semiconductor wafer W, so that the semiconductor wafer W can be quickly detached and the workability is remarkably improved. Can be made. In addition, since a plurality of adhesive layers 10 are arranged on a part of the surface of the support substrate 1 instead of the entire surface to suppress the adhesion range to a necessary and sufficient range, the thin and fragile semiconductor wafer W can be safely removed from the adhesion layer 10. And it can peel easily. Therefore, the semiconductor wafer W can be safely attached and detached, and the situation where the semiconductor wafer W is damaged can be avoided in advance.

また、粘着層１０やその粘着材料１１の占有面積等が狭いので、製造コストを大幅に削減することができる。また、粘着層１０の表面に複数の保持突起を立設したり、半導体ウェーハＷ支持用の複数の支持櫛歯を配列したりする必要もないので、サポート治具の構成や製造方法の簡素化を図ることができる。   Further, since the area occupied by the adhesive layer 10 and the adhesive material 11 is small, the manufacturing cost can be greatly reduced. In addition, since it is not necessary to stand a plurality of holding projections on the surface of the adhesive layer 10 or to arrange a plurality of supporting comb teeth for supporting the semiconductor wafer W, the structure of the support jig and the manufacturing method can be simplified. Can be achieved.

また、複数の粘着層１０をサポート基板１の周方向に略等間隔に配列するので、半導体ウェーハＷを安定した姿勢で保持することが可能になる。また、半導体ウェーハＷに区画された空間から外部に空気を確実に排気することができ、空間に気泡を内包するおそれが実に少ないので、例え真空プロセス等の製造工程に半導体ウェーハ用サポート治具を投入しても、気泡が膨張して半導体ウェーハＷを損傷させるのを防ぐことが可能になる。   In addition, since the plurality of adhesive layers 10 are arranged at substantially equal intervals in the circumferential direction of the support substrate 1, the semiconductor wafer W can be held in a stable posture. Also, air can be reliably exhausted from the space partitioned by the semiconductor wafer W, and there is very little risk of enclosing air bubbles in the space. For example, a semiconductor wafer support jig is used in a manufacturing process such as a vacuum process. Even if it is inserted, it is possible to prevent the bubbles from expanding and damaging the semiconductor wafer W.

また、離型処理プレート２１のキャビティ２４内に粘着材料１１が隙間なく充填されることがないので、粘着層１０に厚さバラツキの生じることが少ない。また、金型２０の間隙から粘着材料１１が流出・固化し、粘着層１０にバリの生じることがないので、バリとの接触に伴う半導体ウェーハＷの汚染をきわめて有効に防止することができる。また、バリの除去作業が不要となるので、製造作業の著しい円滑化、迅速化、容易化が大いに期待できる。さらに、一種類の金型２０で様々な幅の粘着層１０に対応することができるので、粘着層１０の粘着力を容易に微調整することができる。   Further, since the adhesive material 11 is not filled in the cavity 24 of the mold release processing plate 21 without a gap, there is little occurrence of thickness variation in the adhesive layer 10. Further, since the adhesive material 11 flows out and solidifies from the gap of the mold 20 and no burrs are generated in the adhesive layer 10, contamination of the semiconductor wafer W due to contact with the burrs can be extremely effectively prevented. In addition, since the burr removal operation is unnecessary, significant smoothing, speeding up, and simplification of the manufacturing operation can be greatly expected. Furthermore, since one type of mold 20 can handle the adhesive layers 10 having various widths, the adhesive force of the adhesive layer 10 can be easily finely adjusted.

次に、図１１は本発明の第２の実施形態を示すもので、この場合には、サポート基板１の周方向に、加工用の複数の貫通孔１６を所定の間隔で穿孔し、この複数の貫通孔１６を、例えばサポート基板１の取り外し突起２の近傍、及びサポート基板１の後方と両側との間付近にそれぞれ配列するようにしている。
複数の貫通孔１６は、サポート基板１となる樹脂板の製造装置の仕様に応じて配列され、各貫通孔１６が平面円形に穿孔される。その他の部分については、上記実施形態と同様であるので説明を省略する。 Next, FIG. 11 shows a second embodiment of the present invention. In this case, a plurality of processing through holes 16 are drilled in the circumferential direction of the support substrate 1 at a predetermined interval. The through holes 16 are arranged, for example, in the vicinity of the removal protrusion 2 of the support substrate 1 and in the vicinity between the rear and both sides of the support substrate 1.
The plurality of through-holes 16 are arranged according to the specifications of the apparatus for manufacturing the resin plate used as the support substrate 1, and each through-hole 16 is drilled into a planar circle. The other parts are the same as those in the above embodiment, and the description thereof is omitted.

本実施形態においても上記実施形態と同様の作用効果が期待でき、しかも、複数の貫通孔１６を利用して樹脂板を高精度に位置決め固定し、樹脂板をサポート基板１に加工することができるので、製造作業の便宜を図ることができるのは明らかである。   Also in this embodiment, the same effect as the above embodiment can be expected, and the resin plate can be positioned and fixed with high accuracy by using the plurality of through holes 16 and the resin plate can be processed into the support substrate 1. Therefore, it is clear that the convenience of the manufacturing operation can be achieved.

次に、図１２は本発明の第３の実施形態を示すもので、この場合には、サポート基板１をオリフラ付きの半導体ウェーハＷと略同じ大きさ・形の板としてその周縁部後方を左右方向に直線的に形成し、このサポート基板１の表面周縁部付近に左右一対の粘着層１０を並べて粘着するとともに、この一対の粘着層１０の両端部間に、空気が流通可能な非粘着領域１３をそれぞれ区画形成し、各粘着層１０を平面略Ｃ字形に湾曲形成してそのサポート基板１の周縁部後方寄りの末端部、換言すれば、オリフラ寄りの末端部に、サポート基板１の内方向に広がる幅広部１２を拡大形成するようにしている。   Next, FIG. 12 shows a third embodiment of the present invention. In this case, the support substrate 1 is a plate having substantially the same size and shape as the semiconductor wafer W with the orientation flat, and the rear side of the peripheral portion is left and right. A non-adhesive region that is formed linearly in the direction and that adheres a pair of left and right adhesive layers 10 in the vicinity of the peripheral edge of the surface of the support substrate 1 and allows air to flow between both ends of the pair of adhesive layers 10. 13, each adhesive layer 10 is curved and formed in a substantially plane C shape, and the end of the support substrate 1 near the rear edge of the periphery, in other words, at the end near the orientation flat, The wide portion 12 extending in the direction is enlarged.

二箇所の非粘着領域１３は、１８０°の間隔で相対向し、半導体ウェーハ用の剥離開始部１４と剥離終了部１５として利用される。その他の部分については、上記実施形態と同様であるので説明を省略する。
本実施形態においても上記実施形態と同様の作用効果が期待でき、しかも、サポート基板１が中空ではなく、半導体ウェーハＷと同じ大きさ・形の板なので、半導体ウェーハＷの対向する表面をきわめて有効に保護することができ、半導体ウェーハＷの表面が周辺機器等に衝突して損傷するのを防止することが可能になる。 The two non-adhesive regions 13 are opposed to each other at an interval of 180 °, and are used as a peeling start portion 14 and a peeling end portion 15 for a semiconductor wafer. The other parts are the same as those in the above embodiment, and the description thereof is omitted.
In this embodiment, the same effect as that of the above embodiment can be expected, and the support substrate 1 is not hollow and has the same size and shape as the semiconductor wafer W. Therefore, the opposing surface of the semiconductor wafer W is extremely effective. Thus, it is possible to prevent the surface of the semiconductor wafer W from colliding with peripheral devices and being damaged.

次に、図１３は本発明の第４の実施形態を示すもので、この場合には、サポート基板１をオリフラ付きの半導体ウェーハＷと略同じ大きさ・形の板に形成し、このサポート基板１の表面周縁部付近に複数の粘着層１０を所定の間隔で並べて粘着するとともに、隣接する粘着層１０と粘着層１０との間に、空気が流通可能な非粘着領域１３をそれぞれ区画形成し、オリフラ寄りの一対の粘着層１０の末端部に、サポート基板１の内方向に広がる幅広部１２をそれぞれ拡大形成するようにしている。   Next, FIG. 13 shows a fourth embodiment of the present invention. In this case, the support substrate 1 is formed on a plate having substantially the same size and shape as the semiconductor wafer W with the orientation flat. A plurality of adhesive layers 10 are arranged and adhered at a predetermined interval in the vicinity of the peripheral edge of one surface, and a non-adhesive region 13 through which air can flow is defined between adjacent adhesive layers 10 and adhesive layers 10. The wide portions 12 extending inward of the support substrate 1 are respectively formed in an enlarged manner at the end portions of the pair of adhesive layers 10 near the orientation flat.

複数の粘着層１０は、サポート基板１の前方両側と後方両側とにそれぞれ配列され、各粘着層１０が円弧形に湾曲した細長い線条に形成される。また、複数の非粘着領域１３は、サポート基板周縁部の前方、後方、左右両側にそれぞれ位置し、前方と後方に位置する二箇所の非粘着領域１３が１８０°の間隔で相対向しており、これら二箇所の非粘着領域１３が半導体ウェーハ用の剥離開始部１４と剥離終了部１５として活用される。その他の部分については、上記実施形態と同様であるので説明を省略する。   The plurality of adhesive layers 10 are respectively arranged on both the front and rear sides of the support substrate 1, and each adhesive layer 10 is formed in an elongated linear shape curved in an arc shape. The plurality of non-adhesive regions 13 are located on the front, rear, and left and right sides of the peripheral edge of the support substrate, and the two non-adhesive regions 13 located on the front and rear sides are opposed to each other at an interval of 180 °. These two non-adhesive regions 13 are utilized as a peeling start portion 14 and a peeling end portion 15 for a semiconductor wafer. The other parts are the same as those in the above embodiment, and the description thereof is omitted.

本実施形態においても上記実施形態と同様の作用効果が期待でき、しかも、取り外し突起２や複数の情報把握切り欠き３を省略することができるので、サポート基板１の製造の簡素化が期待できるのは明白である。また、複数の粘着層１０の配列パターンの多様化も期待できる。   In the present embodiment, the same effect as that of the above embodiment can be expected, and the removal protrusion 2 and the plurality of information grasping cutouts 3 can be omitted, so that the manufacturing of the support substrate 1 can be simplified. Is obvious. In addition, diversification of the arrangement pattern of the plurality of adhesive layers 10 can be expected.

なお、上記実施形態ではオリフラやノッチが形成された半導体ウェーハＷと同じ形のサポート基板１を示したが、何らこれに限定されるものではない。例えば、オリフラやノッチが形成されていない円形の半導体ウェーハＷを保持するため、取り外し突起２のない円形のサポート基板１を用いても良い。また、上記実施形態のサポート基板１の周縁部には、平面半円形、リング形、Ｙ字形等の取り外し突起２を突出形成しても良い。   In the above embodiment, the support substrate 1 having the same shape as the semiconductor wafer W on which the orientation flat or the notch is formed is shown, but the present invention is not limited to this. For example, in order to hold a circular semiconductor wafer W on which no orientation flat or notch is formed, a circular support substrate 1 without a removal protrusion 2 may be used. Moreover, you may form the removal protrusion 2 of a planar semicircle, a ring shape, Y shape, etc. in the peripheral part of the support substrate 1 of the said embodiment protrudingly.

また、上記実施形態ではサポート基板１の表面の一部に複数の粘着層１０を設けたが、サポート基板１の裏面周縁部に複数の粘着層１０を部分的に設けても良いし、サポート基板１の表裏面の周縁部に複数の粘着層１０をそれぞれ部分的に設けても良い。また、サポート基板１が平面リング形の場合、サポート基板１の表面外周縁寄りに粘着層１０を粘着したが、半導体ウェーハＷに悪影響を与えないのであれば、サポート基板１の表面内周縁寄り、表面中央、全表面に粘着層１０を粘着することもできる。   Moreover, in the said embodiment, although the some adhesion layer 10 was provided in a part of surface of the support substrate 1, you may partially provide the some adhesion layer 10 in the back surface peripheral part of the support substrate 1, and a support substrate. A plurality of pressure-sensitive adhesive layers 10 may be partially provided on the peripheral portions of the front and back surfaces. Further, when the support substrate 1 is a flat ring shape, the adhesive layer 10 is adhered to the vicinity of the outer peripheral edge of the support substrate 1, but if it does not adversely affect the semiconductor wafer W, the inner peripheral surface of the support substrate 1 is The adhesive layer 10 can also be adhered to the center of the surface and the entire surface.

また、必要に応じ、サポート基板１の外周縁後方側に位置する一対の粘着層１０の両端部付近に幅広部１２をそれぞれ拡大形成しても良いし、各粘着層１０の端部付近に幅広部１２を拡大形成することもできる。さらに、粘着材料１１を塗布する場合には、ディスペンサにより塗布するのではなく、精密制御が期待できる安価なスクリーン印刷法等により塗布することもできる。この場合、粘着層１０の端部に幅広部１２を拡大形成するときには、粘着材料１１をスクリーン印刷する最終段階で粘着材料１１の供給量を増やせば良い。   Further, if necessary, the wide portions 12 may be enlarged in the vicinity of both end portions of the pair of adhesive layers 10 located on the rear side of the outer periphery of the support substrate 1, or the wide portions 12 may be formed in the vicinity of the end portions of the adhesive layers 10. The portion 12 can be enlarged. Furthermore, when the adhesive material 11 is applied, the adhesive material 11 can be applied by an inexpensive screen printing method or the like that can be expected to be precisely controlled, not by a dispenser. In this case, when the wide portion 12 is enlarged and formed at the end of the adhesive layer 10, the supply amount of the adhesive material 11 may be increased at the final stage of screen printing the adhesive material 11.

本発明に係る半導体ウェーハ用サポート治具及びその製造方法は、半導体デバイスの製造分野で使用される。   The semiconductor wafer support jig and the manufacturing method thereof according to the present invention are used in the field of manufacturing semiconductor devices.

１ サポート基板
２ 取り外し突起
３ 情報把握切り欠き
１０ 粘着層
１１ 粘着材料
１２ 幅広部
１３ 非粘着領域
１４ 剥離開始部
１５ 剥離終了部
１６ 貫通孔
２０ 金型
２１ 離型処理プレート
２２ 位置決めプレート
２４ キャビティ
Ｗ 半導体ウェーハ DESCRIPTION OF SYMBOLS 1 Support substrate 2 Detaching protrusion 3 Information grasping notch 10 Adhesive layer 11 Adhesive material 12 Wide part 13 Non-adhesive area 14 Peeling start part 15 Peeling end part 16 Through-hole 20 Mold 21 Release processing plate 22 Positioning plate 24 Cavity W Semiconductor Wafer

Claims (5)

薄い半導体ウェーハに対向するサポート基板と、このサポート基板に設けられて半導体ウェーハに着脱自在に粘着する粘着層とを備えた半導体ウェーハ用サポート治具であって、
サポート基板を半導体ウェーハとおおよそ同じ大きさに形成し、サポート基板の両面のうち少なくとも片面に、半導体ウェーハの対向する対向面の周縁部付近に直接粘着する複数の粘着層を設け、この複数の粘着層をサポート基板の周方向に所定の間隔で配列するとともに、複数の粘着層の間に、半導体ウェーハの対向面周縁部付近に粘着しない複数の非粘着領域を形成したことを特徴とする半導体ウェーハ用サポート治具。 A support jig for a semiconductor wafer comprising a support substrate facing a thin semiconductor wafer and an adhesive layer provided on the support substrate and detachably adhered to the semiconductor wafer,
The support substrate is formed to be approximately the same size as the semiconductor wafer, and a plurality of adhesive layers that directly adhere to the periphery of the opposing surface of the semiconductor wafer are provided on at least one side of the support substrate. A semiconductor wafer comprising a plurality of non-adhesive regions that are not adhered in the vicinity of the peripheral edge of the opposing surface of the semiconductor wafer, and the layers are arranged at predetermined intervals in the circumferential direction of the support substrate. Support jig. 複数の非粘着領域のうち、二箇所の非粘着領域を、半導体ウェーハ用の剥離開始部と剥離終了部とし、これら剥離開始部と剥離終了部とを１８０°の間隔で対向させた請求項１記載の半導体ウェーハ用サポート治具。   The two non-adhesive regions of the plurality of non-adhesive regions are defined as a semiconductor wafer peeling start portion and a peeling end portion, and the peeling start portion and the peeling end portion are opposed to each other at an interval of 180 °. The semiconductor wafer support jig described. 粘着層を円弧形状の線条としてその端部付近にサポート基板の幅方向に広がる幅広部を拡大形成した請求項１又は２記載の半導体ウェーハ用サポート治具。   3. The support jig for a semiconductor wafer according to claim 1, wherein the adhesive layer is formed in an arc-shaped line, and a wide portion extending in the width direction of the support substrate is enlarged in the vicinity of the end portion thereof. 請求項１、２、又は３に記載した半導体ウェーハ用サポート治具を金型により製造する製造方法であって、
サポート基板を半導体ウェーハとおおよそ同じ大きさに形成し、サポート基板の両面のうち少なくとも片面に、熱硬化性の複数の粘着材料を塗布し、この複数の粘着材料をサポート基板の周方向に所定の間隔で非連続に配列するとともに、この複数の粘着材料の間に複数の隙間を形成し、複数の粘着材料が塗布されたサポート基板を金型にインサートして型締めした後、加熱することにより、複数の粘着材料を粘着層に形成し、複数の隙間を非粘着領域とすることを特徴とする半導体ウェーハ用サポート治具の製造方法。 A manufacturing method for manufacturing a semiconductor wafer support jig according to claim 1, 2 or 3, using a mold,
The support substrate is formed to be approximately the same size as the semiconductor wafer, and a plurality of thermosetting adhesive materials are applied to at least one of both surfaces of the support substrate, and the plurality of adhesive materials are applied in a predetermined direction in the circumferential direction of the support substrate. By discontinuously arranging at intervals, forming a plurality of gaps between the plurality of adhesive materials, inserting a support substrate coated with a plurality of adhesive materials into a mold, clamping, and then heating A method for manufacturing a support jig for a semiconductor wafer, wherein a plurality of adhesive materials are formed in an adhesive layer, and a plurality of gaps are formed as non-adhesive regions. サポート基板の少なくとも片面に、粘度が１０〜１００Ｐａ・ｓの粘着材料を塗布し、この粘着材料が金型のキャビティ内を満たさないよう押し広げて加熱することにより、粘着材料を粘着層に形成する請求項４記載の半導体ウェーハ用サポート治具の製造方法。   An adhesive material having a viscosity of 10 to 100 Pa · s is applied to at least one side of the support substrate, and the adhesive material is spread and heated so as not to fill the cavity of the mold, thereby forming the adhesive material in the adhesive layer. The manufacturing method of the support jig for semiconductor wafers of Claim 4.
JP2014158768A 2014-08-04 2014-08-04 Support jig for semiconductor wafer and manufacturing method for the same Pending JP2016035983A (en)

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