JP2016032862A - ウエハー研磨装置 - Google Patents
ウエハー研磨装置 Download PDFInfo
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- JP2016032862A JP2016032862A JP2015121739A JP2015121739A JP2016032862A JP 2016032862 A JP2016032862 A JP 2016032862A JP 2015121739 A JP2015121739 A JP 2015121739A JP 2015121739 A JP2015121739 A JP 2015121739A JP 2016032862 A JP2016032862 A JP 2016032862A
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- 238000005498 polishing Methods 0.000 title claims abstract description 46
- 230000002093 peripheral effect Effects 0.000 claims description 53
- 238000003780 insertion Methods 0.000 claims description 30
- 230000037431 insertion Effects 0.000 claims description 30
- 235000012431 wafers Nutrition 0.000 description 33
- 230000008859 change Effects 0.000 description 14
- 238000000926 separation method Methods 0.000 description 9
- 239000000969 carrier Substances 0.000 description 5
- 230000003028 elevating effect Effects 0.000 description 5
- 239000002002 slurry Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000000994 depressogenic effect Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000010687 lubricating oil Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
【解決手段】ベース;前記ベースの上部面上に配置される下定盤;前記下定盤上に配置される上定盤;及び前記上定盤の下部面が第1の方向に窪んだ形状、平らな形状、及び膨らんだ形状のうちいずれか一つになるように前記上定盤の下部面の形状を変形させる第1の形状調節部;を含み、前記第1の方向は、前記下定盤から前記上定盤に向かう方向であるウエハー研磨装置を構成する。
【選択図】図1
Description
120 ベース
130 ベース支持部
140 上定盤
150 上定盤回転部
160 太陽歯車
170 内歯車
180―1、180―2 キャリア
190 制御部
210 第1の形状調節部
220 第2の形状調節部
Claims (15)
- ベース;
前記ベースの上部面上に配置される下定盤;
前記下定盤上に配置される上定盤;及び
前記上定盤の下部面が第1の方向に窪んだ形状、平らな形状、及び膨らんだ形状のうちいずれか一つになるように前記上定盤の下部面の形状を変形させる第1の形状調節部;を含み、前記第1の方向は、前記下定盤から前記上定盤に向かう方向であるウエハー研磨装置。 - 前記第1の形状調節部は、
前記上定盤の上部面を支持し、前記第1の方向に進行するほど幅が広くなる第1の溝を有する上定盤支持部;及び
前記第1の溝内に嵌められる第1の楔部;を含み、
前記第1の楔部の挿入深さによって前記上定盤の下部面の形状が変形し、
前記第1の楔部の挿入深さは、前記第1の溝内に挿入された前記第1の楔部の下端と前記第1の溝の底との間の距離である、請求項1に記載のウエハー研磨装置。 - 前記第1の形状調節部は、
前記上定盤の上部面を支持するプレート;
一端が前記プレートと連結され、前記第1の方向に進行するほど幅が広くなる第1の溝を有する支持部;
前記第1の溝内に嵌められる第1の楔部;及び
前記第1の楔部を前記第1の溝内で前記第1の方向または前記第1の方向と反対方向に移動させる第1の移動部;を含む、請求項1に記載のウエハー研磨装置。 - 前記第1の溝は、
第1の側面、第2の側面、及び前記第1の側面と前記第2の側面との間に位置する底を含み、
前記第2の側面は、前記第1の側面より前記上定盤の外周面にさらに近い、請求項3に記載のウエハー研磨装置。 - 前記第1の側面と第1の基準面とがなす角度は、前記第2の側面と前記第1の基準面とがなす角度と異なり、前記第1の基準面は、前記上定盤の下部面と垂直な面である、請求項4に記載のウエハー研磨装置。
- 前記第1の楔部は円筒状であり、前記第1の溝は、前記第1の楔部と一致する円筒状である、請求項3に記載のウエハー研磨装置。
- 前記第1の溝の個数は複数で、複数の第1の溝は互いに離隔し、
前記第1の楔部は、
前記第1の移動部と連結されるリング状の連結部;及び
前記連結部と連結される複数の脚;を含み、
前記複数の脚のそれぞれは、楔形状であり、前記複数の第1の溝のうち対応するいずれか一つに嵌められる、請求項3に記載のウエハー研磨装置。 - 前記第1の楔部が前記第1の溝に挿入される前の前記上定盤の下部面は、中央部分が第1の方向に窪んだ形状であるか、中央部分が第1の方向に膨らんだ形状である、請求項1から7のいずれか1項に記載のウエハー研磨装置。
- 前記ベースと前記下定盤との間に配置され、前記下定盤の上部面が第1の方向に窪んだ形状、平らな形状、及び膨らんだ形状のうちいずれか一つになるように前記下定盤の上部面の形状を変形させる第2の形状調節部をさらに含む、請求項1から8のいずれか1項に記載のウエハー研磨装置。
- 前記第2の形状調節部は、
前記ベースの上部面と前記下定盤との間に配置される少なくとも一つの第2の楔部;及び
前記第2の楔部を第2の方向または第2の方向と反対方向に移動させる第2の移動部;をさらに含み、
前記第2の楔部が移動した位置に応じて前記下定盤の上部面の形状が変形し、前記第2の方向は、前記下定盤の中心から前記下定盤の外周面に向かう方向である、請求項9に記載のウエハー研磨装置。 - 前記少なくとも一つの第2の楔部は、前記ベースの内周面より前記ベースの外周面に隣接して配置される、請求項10に記載のウエハー研磨装置。
- 前記ベースの上部面には、前記少なくとも一つの第2の楔部が嵌められる第2の溝が設けられる、請求項10に記載のウエハー研磨装置。
- 前記第2の溝と前記第2の楔部との間に配置されるベアリングをさらに含む、請求項12に記載のウエハー研磨装置。
- 前記ベースの上部面は、第2の方向に行くほど下降する傾斜面であり、
前記第2の形状調節部は、
前記下定盤の上部面の一端、及び前記下定盤の上部面の他端の高さを変更する、請求項10に記載のウエハー研磨装置。 - 前記第2の形状調節部は、
前記下定盤の下部面の第1の領域を支持する支持部;及び
前記支持部を上昇または下降させる昇降部;を含み、
前記下定盤の下部面の第1の領域は、前記下定盤の内周面より前記下定盤の外周面にさらに隣接する、請求項14に記載のウエハー研磨装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020140097189A KR101597209B1 (ko) | 2014-07-30 | 2014-07-30 | 웨이퍼 연마 장치 |
KR10-2014-0097189 | 2014-07-30 |
Publications (2)
Publication Number | Publication Date |
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JP2016032862A true JP2016032862A (ja) | 2016-03-10 |
JP6510334B2 JP6510334B2 (ja) | 2019-05-08 |
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JP2015121739A Active JP6510334B2 (ja) | 2014-07-30 | 2015-06-17 | ウエハー研磨装置 |
Country Status (5)
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---|---|
US (1) | US9724800B2 (ja) |
JP (1) | JP6510334B2 (ja) |
KR (1) | KR101597209B1 (ja) |
CN (1) | CN105415164B (ja) |
DE (1) | DE102015214355B4 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI801142B (zh) * | 2021-02-22 | 2023-05-01 | 日商Sumco股份有限公司 | 加工條件設定裝置、加工條件設定方法及晶圓製造系統 |
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DE102016102223A1 (de) * | 2016-02-09 | 2017-08-10 | Lapmaster Wolters Gmbh | Doppel- oder Einseiten-Bearbeitungsmaschine und Verfahren zum Betreiben einer Doppel- oder Einseiten-Bearbeitungsmaschine |
CN109273393A (zh) * | 2018-09-19 | 2019-01-25 | 常山千帆工业设计有限公司 | 一种硅片自动化加工用下料装置 |
Citations (4)
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JPS56126571A (en) * | 1980-03-11 | 1981-10-03 | Nippon Telegr & Teleph Corp <Ntt> | Immersed abrasive device |
JPH06155259A (ja) * | 1992-06-15 | 1994-06-03 | Philips Electronics Nv | 平坦な主面を持つ板の製造方法、平行な二つの主面を持つ板の製造方法および、それらの方法の実施に適した装置 |
JP2004314192A (ja) * | 2003-04-11 | 2004-11-11 | Speedfam Co Ltd | ワークの研磨装置及び研磨方法 |
JP2008229828A (ja) * | 2007-03-23 | 2008-10-02 | Hamai Co Ltd | 定盤形状制御装置および平面加工装置 |
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DE102007049810B4 (de) * | 2007-10-17 | 2012-03-22 | Siltronic Ag | Simultanes Doppelseitenschleifen von Halbleiterscheiben |
KR20100069788A (ko) | 2008-12-17 | 2010-06-25 | 엘지이노텍 주식회사 | 기판 평탄도 보정용 압력조절장치 |
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-
2014
- 2014-07-30 KR KR1020140097189A patent/KR101597209B1/ko active IP Right Grant
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2015
- 2015-06-17 JP JP2015121739A patent/JP6510334B2/ja active Active
- 2015-06-29 US US14/753,367 patent/US9724800B2/en active Active
- 2015-07-29 DE DE102015214355.4A patent/DE102015214355B4/de active Active
- 2015-07-29 CN CN201510455939.1A patent/CN105415164B/zh active Active
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JPS56126571A (en) * | 1980-03-11 | 1981-10-03 | Nippon Telegr & Teleph Corp <Ntt> | Immersed abrasive device |
JPH06155259A (ja) * | 1992-06-15 | 1994-06-03 | Philips Electronics Nv | 平坦な主面を持つ板の製造方法、平行な二つの主面を持つ板の製造方法および、それらの方法の実施に適した装置 |
JP2004314192A (ja) * | 2003-04-11 | 2004-11-11 | Speedfam Co Ltd | ワークの研磨装置及び研磨方法 |
JP2008229828A (ja) * | 2007-03-23 | 2008-10-02 | Hamai Co Ltd | 定盤形状制御装置および平面加工装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI801142B (zh) * | 2021-02-22 | 2023-05-01 | 日商Sumco股份有限公司 | 加工條件設定裝置、加工條件設定方法及晶圓製造系統 |
Also Published As
Publication number | Publication date |
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JP6510334B2 (ja) | 2019-05-08 |
CN105415164A (zh) | 2016-03-23 |
DE102015214355A1 (de) | 2016-02-04 |
US20160031062A1 (en) | 2016-02-04 |
DE102015214355B4 (de) | 2022-08-25 |
KR101597209B1 (ko) | 2016-02-24 |
US9724800B2 (en) | 2017-08-08 |
CN105415164B (zh) | 2018-02-06 |
KR20160014957A (ko) | 2016-02-12 |
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