JP2016006882A - レーザエネルギによって半導体材料表面を照射する方法および装置 - Google Patents
レーザエネルギによって半導体材料表面を照射する方法および装置 Download PDFInfo
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Abstract
Description
− 半導体材料層表面の領域を選択するステップであって、当該領域が領域サイズを有するステップと、
− ビームスポットサイズを有するエキシマレーザで半導体材料層表面の領域を照射するステップと、−ビームスポットサイズを調整するステップとを含み、
ビームスポットサイズを調整するステップがビームスポットサイズを選択領域サイズに可変的に一致させるステップを含む。
− 半導体層表面の選択領域を照射するエキシマレーザであって、選択領域が有する領域サイズに一致させるレーザビームスポットサイズを有するエキシマレーザと、
− レーザビームスポットサイズを調整する手段とを具え、
レーザビームスポットサイズを調整する手段がレーザビームスポットサイズを選択領域サイズに可変的に一致させるよう適合されている。
− 半導体材料層表面の領域を選択するステップであって、当該領域が領域サイズを有するステップと、
− ビームスポットサイズを有するエキシマレーザで半導体材料層表面の領域を照射するステップと、
− ビームスポットサイズを調整するステップとを含み、
ビームスポットサイズを調整するステップがビームスポットサイズを選択領域サイズに可変的に一致させるステップを含む。
半導体層表面の選択領域を照射するエキシマレーザであって、選択領域が有する領域サイズに一致させるレーザビームスポットサイズを有するエキシマレーザと、
レーザビームスポットサイズを調整する手段とを具え、
レーザビームスポットサイズを調整する手段がレーザビームスポットサイズを選択領域サイズに可変的に一致させるよう適合されている。
ステップ0:ビームスポットに対してウェハを装填し、概略的にウェハを配置する。
照射パラメータは、
− 特定のウェハ基板(例えば2J/cm2)に必要なエネルギー密度と、
− ウェハ(例えば18×12mm)の処理領域の寸法(XW×YW)と、
− 基準位置に対するウェハの照射すべきダイの座標((Xi,Yi)i=1〜N、Nは照射するダイの数)とに基づいて選択される。
− 光学系の倍率(G)を演算し、ウェハの所望の寸法(XW×YW)に最も近いウェハスポットサイズを生成する一方で、絞りのブレードを全開放位置(X開口=96mm,Y開口=76mm)にする。この実施例では、G=X開口/XW=96/18=5,33である。
− 遅延線の位置は(前の較正によって測定した)プリセット位置に調整され、所望の倍率に対応し、96/5.33×72/5.33=18×13.5mmのウェハスポットサイズをもたらす。対物レンズ群の焦点の微調整も必要である。
− 絞りブレードの位置を調整して必要なビームサイズを得る。この実施例では、2つの垂直ブレード(Xの調整)が開放位置に残り、2つの水平ブレードはY=12mmに到達するように調整され、名目上18×12mmのウェハスポットサイズをもたらす。
− 絞りブレードの位置を微調整する。
− パターン認識ステップは、ウェハステージ座標系に対するウェハの3つの位置合わせマークの正確な位置を検出する。
− ウェハステージはレーザスポットの位置を当該処理すべき第1のダイの位置に重ねるよう移動する。
− 必要なエネルギ密度で第1のダイをレーザ照射する。レーザ充電電圧を調節し、ビーム経路の可変減衰器を用いることによって照射エネルギが制御される。
− ウェハステージが次のダイの位置(Xi,Yi)に移動する。
− 照射とウェハステージの移動は、当該処理すべき全てのダイが照射されるまで繰り返される。
Claims (12)
- 半導体材料を照射する方法において、
半導体材料層表面の領域を選択するステップであって、前記領域が領域サイズを有するステップと、
ビームスポットサイズを有するエキシマレーザで前記半導体材料層表面の領域を照射するステップと、
前記ビームスポットサイズを前記選択領域サイズに可変的に一致させることによって、前記ビームスポットサイズを調整するステップとを含み、
前記ビームスポットサイズを一致させることが、可変絞りのサイズと形状を変更することによって行われ、その画像が前記材料層表面に形成されることを特徴とする方法。 - 請求項1に記載の方法において、前記ビームスポットサイズを一致させるステップが、可変画像倍率を有する光学系の倍率を変更することによって行われることを特徴とする方法。
- 請求項1に記載の方法がさらに、前記ビームスポットをXYZ方向で前記選択領域に位置合わせするステップを含むことを特徴とする方法。
- 請求項1に記載の方法において、前記選択領域が少なくとも1つのダイ全体であることを特徴とする方法。
- 請求項1に記載の方法がさらに、前記ビームスポットサイズを前記選択領域サイズに一致させる前に前記レーザビームを均質化するステップを含むことを特徴とする方法。
- 半導体材料を照射する装置において、
半導体材料層表面の選択領域を照射するエキシマレーザであって、前記選択領域が有する領域サイズに一致させるレーザビームスポットサイズを有するエキシマレーザと、
前記レーザビームスポットサイズを前記選択領域サイズに可変的に一致させるための手段を有する前記レーザビームスポットサイズを調整する手段とを具え、
前記レーザビームスポットサイズを可変的に一致させるための手段が、可変絞り及び前記半導体材料層表面に前記可変絞りの画像を形成するための高解像度画像システムを具えることを特徴とする装置。 - 請求項6に記載の装置において、前記エキシマレーザが1〜10J/cm2のエネルギ密度でレーザビームを生成するよう適合されていることを特徴とする装置。
- 請求項7に記載の装置において、前記レーザビームスポットサイズを一致させる手段が可変画像倍率を有する光学系を具えることを特徴とする装置。
- 請求項7に記載の装置がさらに、前記ビームスポットをXYZ方向で前記選択領域に位置合わせする手段を具えることを特徴とする装置。
- 請求項7に記載の装置において、前記ビームスポットサイズが少なくとも1つのダイ全体に一致することを特徴とする装置。
- 請求項7に記載の装置がさらに、ビームホモジナイザを具え、前記レーザビームスポットサイズを調整する手段の前に配置されていることを特徴とする装置。
- 半導体材料を作製するための請求項7に記載の装置の使用。
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EP09305290A EP2239084A1 (en) | 2009-04-07 | 2009-04-07 | Method of and apparatus for irradiating a semiconductor material surface by laser energy |
EP09305290.0 | 2009-04-07 |
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JP2012503965A Division JP2012522646A (ja) | 2009-04-07 | 2010-03-29 | レーザエネルギによって半導体材料表面を照射する方法および装置 |
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US20120171876A1 (en) | 2012-07-05 |
TW201042710A (en) | 2010-12-01 |
EP2416920A1 (en) | 2012-02-15 |
CN102413986A (zh) | 2012-04-11 |
SG10201401316UA (en) | 2014-07-30 |
EP2416920B1 (en) | 2023-11-15 |
SG175029A1 (en) | 2011-11-28 |
US9700959B2 (en) | 2017-07-11 |
KR20120004514A (ko) | 2012-01-12 |
JP6312636B2 (ja) | 2018-04-18 |
TWI512794B (zh) | 2015-12-11 |
EP2239084A1 (en) | 2010-10-13 |
WO2010115763A1 (en) | 2010-10-14 |
JP2012522646A (ja) | 2012-09-27 |
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