JP2016001638A - プラズマ処理装置、プラズマ処理装置の運用方法、及び給電装置 - Google Patents
プラズマ処理装置、プラズマ処理装置の運用方法、及び給電装置 Download PDFInfo
- Publication number
- JP2016001638A JP2016001638A JP2014120251A JP2014120251A JP2016001638A JP 2016001638 A JP2016001638 A JP 2016001638A JP 2014120251 A JP2014120251 A JP 2014120251A JP 2014120251 A JP2014120251 A JP 2014120251A JP 2016001638 A JP2016001638 A JP 2016001638A
- Authority
- JP
- Japan
- Prior art keywords
- heaters
- transformers
- plasma processing
- processing apparatus
- power supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 20
- 230000009466 transformation Effects 0.000 claims description 27
- 239000007787 solid Substances 0.000 claims description 18
- 230000008859 change Effects 0.000 claims description 4
- 238000009832 plasma treatment Methods 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 28
- 230000020169 heat generation Effects 0.000 description 11
- 230000008569 process Effects 0.000 description 8
- 230000018199 S phase Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000003507 refrigerant Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910001219 R-phase Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D11/00—Arrangement of elements for electric heating in or on furnaces
- F27D11/02—Ohmic resistance heating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32908—Utilities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
- H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
- H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/62—Heating elements specially adapted for furnaces
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2001—Maintaining constant desired temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H2242/00—Auxiliary systems
- H05H2242/20—Power circuits
- H05H2242/26—Matching networks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Control Of Resistance Heating (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
【解決手段】一意実施形態のプラズマ処理装置は、処理容器、載置台、複数のヒータ、及び、給電装置を備えている。載置台は、処理容器内に設けられている。複数のヒータは、載置台内に設けられている。給電装置は、複数のヒータに電力を供給する。給電装置は、複数の変圧器、及び、複数のゼロクロス制御型のソリッドステートリレー(SSR)を有している。複数の変圧器は、交流電源からの電圧を降圧するように構成されている。複数の変圧器の各々は、一次コイル及び二次コイルを有している。一次コイルは交流電源に接続されている。複数のSSRの各々は、複数のヒータのうち対応の一つのヒータと複数の変圧器のうち対応の一つの変圧器の二次コイルとの間に設けられている。
【選択図】図3
Description
Claims (8)
- 被処理体に対してプラズマ処理を行うためのプラズマ処理装置であって、
処理容器と、
前記処理容器内に設けられた載置台と、
前記載置台内に設けられた複数のヒータと、
前記複数のヒータに電力を供給する給電装置と、
を備え、
前記給電装置は、
交流電源からの電圧を降圧するように構成された複数の変圧器であり、各々が、該交流電源に接続された一次コイル、及び二次コイルを有する、該複数の変圧器と、
各々が、前記複数のヒータのうち対応の一つのヒータと前記複数の変圧器のうち対応の一つの変圧器の二次コイルとの間に設けられた複数のゼロクロス制御型のソリッドステートリレーと、
を有する、プラズマ処理装置。 - 前記複数のヒータの第1端子と前記複数のゼロクロス制御型のソリッドステートリレーとを個別に接続する複数の第1配線と、
各々が、前記複数のヒータのうち対応の二以上のヒータの第2端子と前記複数の変圧器のうち対応の一つの変圧器の二次コイルとを共通に接続する複数の第2配線と、
を更に備える、請求項1に記載のプラズマ処理装置。 - 前記複数の第2配線のうち共通の第2配線に接続された二以上のヒータは、同一の抵抗値を有する、請求項2に記載のプラズマ処理装置。
- 前記給電装置は、前記複数の変圧器の変圧比を変更する複数の切替器を更に有する、
請求項1〜3の何れか一項に記載のプラズマ処理装置。 - 前記複数の切替器を制御する制御部を更に備え、
前記制御部は、
前記複数の切替器を制御して、前記複数の変圧器の変圧比を設定する第1制御と、
前記複数の切替器を制御して、前記第1制御において設定された前記複数の変圧器の変圧比よりも高い変圧比に前記複数の変圧器の変圧比を設定する第2制御と、
を実行する、請求項4に記載のプラズマ処理装置。 - 請求項4に記載されたプラズマ処理装置の運用方法であって、
前記複数の切替器を制御して、前記複数の変圧器の変圧比を設定する第1工程と、
前記複数の切替器を制御して、前記第1工程において設定された前記複数の変圧器の変圧比よりも高い変圧比に前記複数の変圧器の変圧比を設定する第2工程と、
を含む運用方法。 - プラズマ処理装置の載置台内に設けられた複数のヒータに電力を供給するための給電装置であって、
交流電源からの電圧を降圧するように構成された複数の変圧器であり、各々が、該交流電源に接続された一次コイル、及び二次コイルを有する、該複数の変圧器と、
各々が、前記複数のヒータのうち対応の一つのヒータと前記複数の変圧器のうち対応の一つの変圧器の二次コイルとの間に設けられた複数のゼロクロス制御型のソリッドステートリレーと、
を備える給電装置。 - 前記複数の変圧器の変圧比を変更する複数の切替器を更に備える、請求項7に記載の給電装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014120251A JP6265841B2 (ja) | 2014-06-11 | 2014-06-11 | プラズマ処理装置及びプラズマ処理装置の運用方法 |
US15/309,399 US10699883B2 (en) | 2014-06-11 | 2015-06-01 | Plasma processing apparatus, method of operating plasma processing apparatus, and power supply device |
PCT/JP2015/065771 WO2015190336A1 (ja) | 2014-06-11 | 2015-06-01 | プラズマ処理装置、プラズマ処理装置の運用方法、及び給電装置 |
CN201580024624.XA CN106463390B (zh) | 2014-06-11 | 2015-06-01 | 等离子体处理装置及等离子体处理装置的运用方法 |
KR1020167031236A KR102363557B1 (ko) | 2014-06-11 | 2015-06-01 | 플라즈마 처리 장치, 플라즈마 처리 장치의 운용 방법 및 급전 장치 |
TW104118549A TWI672726B (zh) | 2014-06-11 | 2015-06-09 | 電漿處理裝置、電漿處理裝置之運用方法及供電裝置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014120251A JP6265841B2 (ja) | 2014-06-11 | 2014-06-11 | プラズマ処理装置及びプラズマ処理装置の運用方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016001638A true JP2016001638A (ja) | 2016-01-07 |
JP6265841B2 JP6265841B2 (ja) | 2018-01-24 |
Family
ID=54833434
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014120251A Active JP6265841B2 (ja) | 2014-06-11 | 2014-06-11 | プラズマ処理装置及びプラズマ処理装置の運用方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10699883B2 (ja) |
JP (1) | JP6265841B2 (ja) |
KR (1) | KR102363557B1 (ja) |
CN (1) | CN106463390B (ja) |
TW (1) | TWI672726B (ja) |
WO (1) | WO2015190336A1 (ja) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017188238A (ja) * | 2016-04-04 | 2017-10-12 | 住友電気工業株式会社 | マトリックスヒータ |
WO2019073941A1 (ja) * | 2017-10-10 | 2019-04-18 | 住友電気工業株式会社 | ウエハ加熱用ヒータユニット |
JP2019071349A (ja) * | 2017-10-10 | 2019-05-09 | 住友電気工業株式会社 | ウエハ加熱用ヒータユニット |
JP2019071351A (ja) * | 2017-10-10 | 2019-05-09 | 住友電気工業株式会社 | ウエハ加熱用ヒータユニット |
JP2019071350A (ja) * | 2017-10-10 | 2019-05-09 | 住友電気工業株式会社 | ウエハ加熱用ヒータユニット |
JP2020194800A (ja) * | 2019-05-24 | 2020-12-03 | 日本特殊陶業株式会社 | 保持装置 |
JP2021002576A (ja) * | 2019-06-21 | 2021-01-07 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
US11035049B2 (en) | 2017-09-28 | 2021-06-15 | Toyota Jidosha Kabushiki Kaisha | Film forming method for metal film and film forming apparatus for metal film |
JP2021153203A (ja) * | 2016-10-11 | 2021-09-30 | 東京エレクトロン株式会社 | 温度制御装置、温度制御方法、および載置台 |
WO2024150693A1 (ja) * | 2023-01-10 | 2024-07-18 | 東京エレクトロン株式会社 | 支持体、基板支持器及びプラズマ処理装置 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10720343B2 (en) * | 2016-05-31 | 2020-07-21 | Lam Research Ag | Method and apparatus for processing wafer-shaped articles |
CN110275556B (zh) * | 2018-03-14 | 2022-04-22 | 北京北方华创微电子装备有限公司 | 静电卡盘的温度控制方法、***及半导体处理设备 |
KR102161130B1 (ko) * | 2018-09-27 | 2020-10-05 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
JP7292115B2 (ja) * | 2019-06-07 | 2023-06-16 | 東京エレクトロン株式会社 | 温度調整装置及び温度制御方法。 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60246416A (ja) * | 1984-05-22 | 1985-12-06 | Mitsubishi Electric Corp | 加熱電源装置 |
JPH03165483A (ja) * | 1989-11-24 | 1991-07-17 | Tokyo Erekutoron Kyushu Kk | 加熱装置 |
JPH07183281A (ja) * | 1993-12-24 | 1995-07-21 | Tokyo Electron Ltd | 処理装置 |
JP2004241745A (ja) * | 2003-02-10 | 2004-08-26 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP2004533718A (ja) * | 2001-04-30 | 2004-11-04 | ラム リサーチ コーポレイション | ワーク支持体の表面を横切る空間温度分布を制御する方法および装置 |
JP2011187404A (ja) * | 2010-03-11 | 2011-09-22 | Omron Corp | 温度制御システム |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5222850B2 (ja) | 1975-02-15 | 1977-06-20 | ||
JPH06208315A (ja) * | 1993-01-08 | 1994-07-26 | Fuji Xerox Co Ltd | 画像形成装置の定着装置 |
US6847014B1 (en) * | 2001-04-30 | 2005-01-25 | Lam Research Corporation | Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support |
US7501605B2 (en) | 2006-08-29 | 2009-03-10 | Lam Research Corporation | Method of tuning thermal conductivity of electrostatic chuck support assembly |
JP2009231247A (ja) * | 2008-03-25 | 2009-10-08 | Tokyo Electron Ltd | プラズマ処理装置及び高周波電力の供給方法 |
CN102044327A (zh) * | 2009-10-19 | 2011-05-04 | 富士电子工业株式会社 | 高频感应加热用薄型变压器 |
JP5592098B2 (ja) * | 2009-10-27 | 2014-09-17 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP5643062B2 (ja) * | 2009-11-24 | 2014-12-17 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP2011187637A (ja) | 2010-03-08 | 2011-09-22 | Hitachi Kokusai Electric Inc | 半導体製造装置 |
JP2014082463A (ja) * | 2012-09-27 | 2014-05-08 | Hitachi Kokusai Electric Inc | 基板処理装置、蓋体及び半導体装置の製造方法 |
JP6332746B2 (ja) * | 2013-09-20 | 2018-05-30 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及びプログラム |
-
2014
- 2014-06-11 JP JP2014120251A patent/JP6265841B2/ja active Active
-
2015
- 2015-06-01 KR KR1020167031236A patent/KR102363557B1/ko active IP Right Grant
- 2015-06-01 CN CN201580024624.XA patent/CN106463390B/zh active Active
- 2015-06-01 WO PCT/JP2015/065771 patent/WO2015190336A1/ja active Application Filing
- 2015-06-01 US US15/309,399 patent/US10699883B2/en active Active
- 2015-06-09 TW TW104118549A patent/TWI672726B/zh active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60246416A (ja) * | 1984-05-22 | 1985-12-06 | Mitsubishi Electric Corp | 加熱電源装置 |
JPH03165483A (ja) * | 1989-11-24 | 1991-07-17 | Tokyo Erekutoron Kyushu Kk | 加熱装置 |
JPH07183281A (ja) * | 1993-12-24 | 1995-07-21 | Tokyo Electron Ltd | 処理装置 |
JP2004533718A (ja) * | 2001-04-30 | 2004-11-04 | ラム リサーチ コーポレイション | ワーク支持体の表面を横切る空間温度分布を制御する方法および装置 |
JP2004241745A (ja) * | 2003-02-10 | 2004-08-26 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP2011187404A (ja) * | 2010-03-11 | 2011-09-22 | Omron Corp | 温度制御システム |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017188238A (ja) * | 2016-04-04 | 2017-10-12 | 住友電気工業株式会社 | マトリックスヒータ |
JP7378442B2 (ja) | 2016-10-11 | 2023-11-13 | 東京エレクトロン株式会社 | 温度制御装置、温度制御方法、および載置台 |
JP2021153203A (ja) * | 2016-10-11 | 2021-09-30 | 東京エレクトロン株式会社 | 温度制御装置、温度制御方法、および載置台 |
KR102626163B1 (ko) * | 2016-10-11 | 2024-01-16 | 도쿄엘렉트론가부시키가이샤 | 온도 제어 장치, 온도 제어 방법 및 배치대 |
US11837480B2 (en) | 2016-10-11 | 2023-12-05 | Tokyo Electron Limited | Temperature controlling apparatus, temperature controlling method, and placing table |
KR20220120534A (ko) * | 2016-10-11 | 2022-08-30 | 도쿄엘렉트론가부시키가이샤 | 온도 제어 장치, 온도 제어 방법 및 배치대 |
US11035049B2 (en) | 2017-09-28 | 2021-06-15 | Toyota Jidosha Kabushiki Kaisha | Film forming method for metal film and film forming apparatus for metal film |
JP2019071351A (ja) * | 2017-10-10 | 2019-05-09 | 住友電気工業株式会社 | ウエハ加熱用ヒータユニット |
JP2019071350A (ja) * | 2017-10-10 | 2019-05-09 | 住友電気工業株式会社 | ウエハ加熱用ヒータユニット |
JP2019071349A (ja) * | 2017-10-10 | 2019-05-09 | 住友電気工業株式会社 | ウエハ加熱用ヒータユニット |
WO2019073941A1 (ja) * | 2017-10-10 | 2019-04-18 | 住友電気工業株式会社 | ウエハ加熱用ヒータユニット |
JP7299756B2 (ja) | 2019-05-24 | 2023-06-28 | 日本特殊陶業株式会社 | 保持装置 |
JP2020194800A (ja) * | 2019-05-24 | 2020-12-03 | 日本特殊陶業株式会社 | 保持装置 |
JP7071946B2 (ja) | 2019-06-21 | 2022-05-19 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP2021002576A (ja) * | 2019-06-21 | 2021-01-07 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
WO2024150693A1 (ja) * | 2023-01-10 | 2024-07-18 | 東京エレクトロン株式会社 | 支持体、基板支持器及びプラズマ処理装置 |
Also Published As
Publication number | Publication date |
---|---|
KR102363557B1 (ko) | 2022-02-17 |
US10699883B2 (en) | 2020-06-30 |
WO2015190336A1 (ja) | 2015-12-17 |
US20170110297A1 (en) | 2017-04-20 |
KR20170009852A (ko) | 2017-01-25 |
CN106463390B (zh) | 2019-08-06 |
JP6265841B2 (ja) | 2018-01-24 |
TW201611086A (zh) | 2016-03-16 |
TWI672726B (zh) | 2019-09-21 |
CN106463390A (zh) | 2017-02-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6265841B2 (ja) | プラズマ処理装置及びプラズマ処理装置の運用方法 | |
JP5657262B2 (ja) | プラズマ処理装置 | |
JP7158131B2 (ja) | ステージ及びプラズマ処理装置 | |
JP6442296B2 (ja) | 載置台及びプラズマ処理装置 | |
TWI651798B (zh) | 載置台及電漿處理裝置 | |
US20180190501A1 (en) | Plasma processing apparatus | |
US20200266081A1 (en) | Placing table and plasma treatment apparatus | |
JP6100672B2 (ja) | 温度制御機構、温度制御方法及び基板処理装置 | |
KR20100005683A (ko) | 플라즈마 처리 장치의 챔버내 부재의 온도 제어 방법, 챔버내 부재 및 기판 탑재대와 그것을 구비한 플라즈마 처리 장치 | |
JP2018110216A (ja) | プラズマ処理装置 | |
TW201340790A (zh) | 基板處理裝置 | |
JP2019176030A (ja) | プラズマ処理装置 | |
JP2018085372A (ja) | 載置台及びプラズマ処理装置 | |
CN112289670A (zh) | 温度调整装置 | |
JP2010045170A (ja) | 試料載置電極 | |
KR101754439B1 (ko) | 유도 결합 플라즈마 처리 방법 및 유도 결합 플라즈마 처리 장치 | |
JP7325294B2 (ja) | プラズマ処理装置及びプラズマ処理方法 | |
CN108987231A (zh) | 等离子体处理方法 | |
TW202117913A (zh) | 載置台及電漿處理裝置 | |
KR20200115228A (ko) | 플라즈마 처리 장치 | |
JP6308858B2 (ja) | 静電チャック、載置台、プラズマ処理装置 | |
JP2021052032A (ja) | 誘電体部品、構造体及び基板処理装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170306 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170523 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170606 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20171128 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6265841 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |