JP2018085372A - 載置台及びプラズマ処理装置 - Google Patents
載置台及びプラズマ処理装置 Download PDFInfo
- Publication number
- JP2018085372A JP2018085372A JP2016226024A JP2016226024A JP2018085372A JP 2018085372 A JP2018085372 A JP 2018085372A JP 2016226024 A JP2016226024 A JP 2016226024A JP 2016226024 A JP2016226024 A JP 2016226024A JP 2018085372 A JP2018085372 A JP 2018085372A
- Authority
- JP
- Japan
- Prior art keywords
- outer peripheral
- peripheral region
- power supply
- conductive layer
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000002093 peripheral effect Effects 0.000 claims abstract description 89
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 230000005684 electric field Effects 0.000 abstract description 29
- 239000007789 gas Substances 0.000 description 34
- 238000010586 diagram Methods 0.000 description 17
- 238000005530 etching Methods 0.000 description 16
- 239000004020 conductor Substances 0.000 description 7
- 238000009434 installation Methods 0.000 description 7
- 238000005259 measurement Methods 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 239000003507 refrigerant Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000002238 attenuated effect Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32422—Arrangement for selecting ions or species in the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32678—Electron cyclotron resonance
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
12 処理容器
12a 接地導体
12e 排気口
12g 搬入出口
14 支持部
15 支持台
16 載置台
18 静電チャック
18a 載置領域
18b 外周領域
18b−1 貫通孔
20 基台
21 締結部材
22 直流電源
24 冷媒流路
26a 配管
26b 配管
30 上部電極
32 絶縁性遮蔽部材
34 電極板
34a ガス吐出孔
36 電極支持体
36a ガス拡散室
36b ガス通流孔
36c ガス導入口
38 ガス供給管
40 ガスソース群
42 バルブ群
44 流量制御器群
46 デポシールド
48 排気プレート
50 排気装置
52 排気管
54 ゲートバルブ
60 フィルタ
62 導電層
CT 接点部
Cnt 制御部
E1 電極
EL 給電線
ET 給電端子
EW 配線層
FR フォーカスリング
HFS 第1の高周波電源
HP ヒータ電源
HT ヒータ
LFS 第2の高周波電源
MU1、MU2 整合器
S 処理空間
SW1 スイッチ
W ウエハ
Claims (11)
- 高周波電力が印加される基台と、
前記基台上に設けられ、被処理体を載置するための載置領域と、前記載置領域を囲む外周領域とを有する静電チャックと、
前記載置領域の内部に設けられたヒータと、
前記ヒータに接続され、前記外周領域の内部まで延伸する配線層と、
前記外周領域において前記配線層の接点部に接続される給電端子と、
前記外周領域の内部に、又は、前記外周領域の厚み方向に沿って他の領域に設けられて、前記外周領域の厚み方向から見た場合に前記給電端子に重なる導電層と
を有することを特徴とする載置台。 - 前記外周領域上に設けられたフォーカスリングをさらに有し、
前記導電層は、前記外周領域の厚み方向に沿って前記フォーカスリングの内部に、又は、前記フォーカスリングと前記外周領域との間に設けられて、前記外周領域の厚み方向から見た場合に前記給電端子に重なることを特徴とする請求項1に記載の載置台。 - 前記導電層は、前記フォーカスリングの前記外周領域と対向する面を覆う導電膜であることを特徴とする請求項2に記載の載置台。
- 前記導電層は、前記外周領域の厚み方向から見た場合に前記給電端子に重なる部分と前記給電端子に重ならない部分とを含むリング状に形成されることを特徴とする請求項1〜3のいずれか一つに記載の載置台。
- 前記導電層は、他の部位と電気的に絶縁されることを特徴とする請求項1〜4のいずれか一つに記載の載置台。
- 前記導電層は、W、Ti、Al、Si、Ni、C及びCuのうち少なくともいずれか一つを含むことを特徴とする請求項1〜5のいずれか一つに記載の載置台。
- 複数の前記ヒータが、前記載置領域の内部に設けられ、
複数の前記配線層が、複数の前記ヒータにそれぞれ接続され、前記外周領域の内部まで延伸し、
前記給電端子は、前記配線層毎に設けられ、前記外周領域において対応する前記配線層の接点部に接続され、
前記導電層は、前記外周領域の厚み方向から見た場合に複数の前記給電端子に重なることを特徴とする請求項1〜6のいずれか一つに記載の載置台。 - 前記給電端子と外部の電源とを接続する給電線と、
前記給電線に設けられ、前記基台に印加されて前記給電端子から前記給電線に漏洩する高周波電力を減衰させるフィルタと
をさらに有することを特徴とする請求項1〜7のいずれか一つに記載の載置台。 - 前記外周領域には、前記基台の固定用の部材が挿通される貫通孔が形成され、
前記導電層は、前記外周領域の厚み方向に沿って他の領域に設けられて、前記外周領域の厚み方向から見た場合に前記給電端子に加えて前記貫通孔に重なることを特徴とする請求項1〜8のいずれか一つに記載の載置台。 - 高周波電力が印加される基台と、
前記基台上に設けられて、被処理体を載置するための載置領域と、前記載置領域を囲む外周領域と、前記外周領域を貫通する貫通孔とを有する静電チャックと、
前記外周領域の厚み方向に沿って他の領域に設けられて、前記外周領域の厚み方向から見た場合に前記貫通孔に重なる導電層と
を有することを特徴とする載置台。 - 請求項1〜10のいずれか一つに記載の載置台を有するプラズマ処理装置。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016226024A JP6698502B2 (ja) | 2016-11-21 | 2016-11-21 | 載置台及びプラズマ処理装置 |
KR1020170149429A KR102411913B1 (ko) | 2016-11-21 | 2017-11-10 | 배치대 및 플라즈마 처리 장치 |
US15/813,796 US20180144945A1 (en) | 2016-11-21 | 2017-11-15 | Placing unit and plasma processing apparatus |
TW106139591A TWI753970B (zh) | 2016-11-21 | 2017-11-16 | 載置台及電漿處理裝置 |
SG10201709531YA SG10201709531YA (en) | 2016-11-21 | 2017-11-17 | Placing Unit And Plasma Processing Apparatus |
CN201711165278.4A CN108091535B (zh) | 2016-11-21 | 2017-11-21 | 载置台和等离子体处理装置 |
CN202010396274.2A CN111584339B (zh) | 2016-11-21 | 2017-11-21 | 载置台和等离子体处理装置 |
KR1020220073981A KR102618925B1 (ko) | 2016-11-21 | 2022-06-17 | 배치대 및 플라즈마 처리 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016226024A JP6698502B2 (ja) | 2016-11-21 | 2016-11-21 | 載置台及びプラズマ処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018085372A true JP2018085372A (ja) | 2018-05-31 |
JP6698502B2 JP6698502B2 (ja) | 2020-05-27 |
Family
ID=62147190
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016226024A Active JP6698502B2 (ja) | 2016-11-21 | 2016-11-21 | 載置台及びプラズマ処理装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20180144945A1 (ja) |
JP (1) | JP6698502B2 (ja) |
KR (2) | KR102411913B1 (ja) |
CN (2) | CN111584339B (ja) |
SG (1) | SG10201709531YA (ja) |
TW (1) | TWI753970B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020116251A1 (ja) * | 2018-12-06 | 2020-06-11 | 東京エレクトロン株式会社 | プラズマ処理装置、及び、プラズマ処理方法 |
US11823872B2 (en) | 2020-10-05 | 2023-11-21 | Kioxia Corporation | Electrostatic chuck apparatus and semiconductor manufacturing apparatus |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6378942B2 (ja) | 2014-06-12 | 2018-08-22 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
JP7101055B2 (ja) * | 2018-06-12 | 2022-07-14 | 東京エレクトロン株式会社 | 静電チャック、フォーカスリング、支持台、プラズマ処理装置、及びプラズマ処理方法 |
US11037765B2 (en) * | 2018-07-03 | 2021-06-15 | Tokyo Electron Limited | Resonant structure for electron cyclotron resonant (ECR) plasma ionization |
JP7398935B2 (ja) * | 2019-11-25 | 2023-12-15 | 東京エレクトロン株式会社 | 載置台、及び、検査装置 |
JP7442365B2 (ja) * | 2020-03-27 | 2024-03-04 | 東京エレクトロン株式会社 | 基板処理装置、基板処理システム、基板処理装置の制御方法および基板処理システムの制御方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10204645A (ja) * | 1997-01-17 | 1998-08-04 | Hitachi Electron Eng Co Ltd | 下部電極 |
JP2005064460A (ja) * | 2003-04-24 | 2005-03-10 | Tokyo Electron Ltd | プラズマ処理装置、フォーカスリング及び被処理体の載置装置 |
JP2013187477A (ja) * | 2012-03-09 | 2013-09-19 | Sumitomo Osaka Cement Co Ltd | 静電チャック装置 |
JP2014099585A (ja) * | 2012-10-19 | 2014-05-29 | Tokyo Electron Ltd | プラズマ処理装置 |
JP2016001688A (ja) * | 2014-06-12 | 2016-01-07 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
WO2016080502A1 (ja) * | 2014-11-20 | 2016-05-26 | 住友大阪セメント株式会社 | 静電チャック装置 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040261946A1 (en) * | 2003-04-24 | 2004-12-30 | Tokyo Electron Limited | Plasma processing apparatus, focus ring, and susceptor |
JP2007250967A (ja) * | 2006-03-17 | 2007-09-27 | Tokyo Electron Ltd | プラズマ処理装置および方法とフォーカスリング |
JP2009054871A (ja) * | 2007-08-28 | 2009-03-12 | Tokyo Electron Ltd | 載置台構造及び処理装置 |
JP4450106B1 (ja) * | 2008-03-11 | 2010-04-14 | 東京エレクトロン株式会社 | 載置台構造及び処理装置 |
US20100018648A1 (en) * | 2008-07-23 | 2010-01-28 | Applied Marterials, Inc. | Workpiece support for a plasma reactor with controlled apportionment of rf power to a process kit ring |
JP2010232476A (ja) * | 2009-03-27 | 2010-10-14 | Tokyo Electron Ltd | プラズマ処理装置 |
JP5917946B2 (ja) | 2012-02-24 | 2016-05-18 | 東京エレクトロン株式会社 | 基板載置台及びプラズマエッチング装置 |
US9412579B2 (en) * | 2012-04-26 | 2016-08-09 | Applied Materials, Inc. | Methods and apparatus for controlling substrate uniformity |
JP6001932B2 (ja) | 2012-06-19 | 2016-10-05 | 東京エレクトロン株式会社 | プラズマ処理装置及びフィルタユニット |
JP5996340B2 (ja) * | 2012-09-07 | 2016-09-21 | 東京エレクトロン株式会社 | プラズマエッチング装置 |
KR102137617B1 (ko) * | 2012-10-19 | 2020-07-24 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 장치 |
JP2015176683A (ja) * | 2014-03-14 | 2015-10-05 | 株式会社日立ハイテクノロジーズ | 静電チャック機構、及び荷電粒子線装置 |
JP6219229B2 (ja) * | 2014-05-19 | 2017-10-25 | 東京エレクトロン株式会社 | ヒータ給電機構 |
KR20160015510A (ko) * | 2014-07-30 | 2016-02-15 | 삼성전자주식회사 | 정전척 어셈블리, 이를 구비하는 반도체 제조장치, 및 이를 이용한 플라즈마 처리방법 |
WO2017029876A1 (ja) * | 2015-08-20 | 2017-02-23 | 日本碍子株式会社 | 静電チャックヒータ |
JP6435247B2 (ja) * | 2015-09-03 | 2018-12-05 | 新光電気工業株式会社 | 静電チャック装置及び静電チャック装置の製造方法 |
-
2016
- 2016-11-21 JP JP2016226024A patent/JP6698502B2/ja active Active
-
2017
- 2017-11-10 KR KR1020170149429A patent/KR102411913B1/ko active IP Right Grant
- 2017-11-15 US US15/813,796 patent/US20180144945A1/en not_active Abandoned
- 2017-11-16 TW TW106139591A patent/TWI753970B/zh active
- 2017-11-17 SG SG10201709531YA patent/SG10201709531YA/en unknown
- 2017-11-21 CN CN202010396274.2A patent/CN111584339B/zh active Active
- 2017-11-21 CN CN201711165278.4A patent/CN108091535B/zh active Active
-
2022
- 2022-06-17 KR KR1020220073981A patent/KR102618925B1/ko active IP Right Grant
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10204645A (ja) * | 1997-01-17 | 1998-08-04 | Hitachi Electron Eng Co Ltd | 下部電極 |
JP2005064460A (ja) * | 2003-04-24 | 2005-03-10 | Tokyo Electron Ltd | プラズマ処理装置、フォーカスリング及び被処理体の載置装置 |
JP2013187477A (ja) * | 2012-03-09 | 2013-09-19 | Sumitomo Osaka Cement Co Ltd | 静電チャック装置 |
JP2014099585A (ja) * | 2012-10-19 | 2014-05-29 | Tokyo Electron Ltd | プラズマ処理装置 |
JP2016001688A (ja) * | 2014-06-12 | 2016-01-07 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
WO2016080502A1 (ja) * | 2014-11-20 | 2016-05-26 | 住友大阪セメント株式会社 | 静電チャック装置 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020116251A1 (ja) * | 2018-12-06 | 2020-06-11 | 東京エレクトロン株式会社 | プラズマ処理装置、及び、プラズマ処理方法 |
JP2020092026A (ja) * | 2018-12-06 | 2020-06-11 | 東京エレクトロン株式会社 | プラズマ処理装置、及び、プラズマ処理方法 |
KR20210097785A (ko) * | 2018-12-06 | 2021-08-09 | 도쿄엘렉트론가부시키가이샤 | 플라스마 처리 장치 및 플라스마 처리 방법 |
JP7162837B2 (ja) | 2018-12-06 | 2022-10-31 | 東京エレクトロン株式会社 | プラズマ処理装置、及び、プラズマ処理方法 |
KR102607755B1 (ko) * | 2018-12-06 | 2023-11-30 | 도쿄엘렉트론가부시키가이샤 | 플라스마 처리 장치 및 플라스마 처리 방법 |
US11923170B2 (en) | 2018-12-06 | 2024-03-05 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
US11823872B2 (en) | 2020-10-05 | 2023-11-21 | Kioxia Corporation | Electrostatic chuck apparatus and semiconductor manufacturing apparatus |
Also Published As
Publication number | Publication date |
---|---|
CN111584339A (zh) | 2020-08-25 |
KR20220091447A (ko) | 2022-06-30 |
TW201833977A (zh) | 2018-09-16 |
TWI753970B (zh) | 2022-02-01 |
KR102618925B1 (ko) | 2023-12-27 |
CN108091535A (zh) | 2018-05-29 |
KR20180057521A (ko) | 2018-05-30 |
CN108091535B (zh) | 2020-06-09 |
JP6698502B2 (ja) | 2020-05-27 |
US20180144945A1 (en) | 2018-05-24 |
SG10201709531YA (en) | 2018-06-28 |
KR102411913B1 (ko) | 2022-06-23 |
CN111584339B (zh) | 2023-07-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6698502B2 (ja) | 載置台及びプラズマ処理装置 | |
JP6423706B2 (ja) | プラズマ処理装置 | |
KR102374521B1 (ko) | 재치대 및 플라즈마 처리 장치 | |
JP2011035266A (ja) | プラズマ処理装置及びプラズマ処理方法 | |
JP2018110216A (ja) | プラズマ処理装置 | |
JP7140610B2 (ja) | プラズマ処理装置 | |
TW201833976A (zh) | 雙頻率表面波電漿源 | |
KR20190016912A (ko) | 플라즈마 처리 장치 | |
KR101754439B1 (ko) | 유도 결합 플라즈마 처리 방법 및 유도 결합 플라즈마 처리 장치 | |
KR102323580B1 (ko) | 플라즈마 발생 유닛 및 기판 처리 장치 | |
US20190237305A1 (en) | Method for applying dc voltage and plasma processing apparatus | |
JP2019176030A (ja) | プラズマ処理装置 | |
US20210183631A1 (en) | Plasma processing apparatus and plasma processing method | |
JP2019176032A (ja) | プラズマ処理装置 | |
KR20200140198A (ko) | 정전 척, 지지대 및 플라즈마 처리 장치 | |
JP2023053335A (ja) | 載置台及び基板処理装置 | |
US11742180B2 (en) | Plasma processing method and plasma processing apparatus | |
US11990316B2 (en) | Plasma processing apparatus and plasma processing method | |
JP6117763B2 (ja) | プラズマ処理装置 | |
TW202233023A (zh) | 電漿處理裝置與其製造方法及電漿處理方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190530 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200303 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20200228 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200324 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200407 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200428 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6698502 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |