JP2015506589A - リニアＦｉｎＦＥＴ構造をもつ回路 - Google Patents

リニアＦｉｎＦＥＴ構造をもつ回路 Download PDF

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Publication number: JP2015506589A
Authority: JP; Japan
Prior art keywords: diffusion; diffusion fin; pitch; fin; semiconductor device
Prior art date: 2012-01-13
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP2014552360A

Other languages

English (en)

Japanese (ja)

Inventor

スコットティーベッカー

マイケルシースメイリング

ドルミルガンディ

ジムマリ

キャロルランバート

ジョナサンアールクヴァント

ダリルフォックス

Original Assignee

テライノヴェイションズインコーポレイテッド

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2012-01-13

Filing date

2013-01-13

Publication date

2015-03-02

2013-01-13 Application filed by テライノヴェイションズインコーポレイテッド, テライノヴェイションズインコーポレイテッド filed Critical テライノヴェイションズインコーポレイテッド

2015-03-02 Publication of JP2015506589A publication Critical patent/JP2015506589A/ja

Status Pending legal-status Critical Current

Links

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239000011295 pitch Substances 0.000 claims description 309
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238000000034 method Methods 0.000 claims description 16
238000013500 data storage Methods 0.000 claims description 10
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238000010586 diagram Methods 0.000 description 39
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XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
239000003989 dielectric material Substances 0.000 description 3
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VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
229910000577 Silicon-germanium Inorganic materials 0.000 description 2
NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
238000007792 addition Methods 0.000 description 2
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238000006467 substitution reaction Methods 0.000 description 2
MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
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Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823821—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0924—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/118—Masterslice integrated circuits
- H01L27/11803—Masterslice integrated circuits using field effect technology
- H01L27/11807—CMOS gate arrays
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/6681—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET using dummy structures having essentially the same shape as the semiconductor body, e.g. to provide stability
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7809—Vertical DMOS transistors, i.e. VDMOS transistors having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors

Landscapes

Engineering & Computer Science (AREA)
Power Engineering (AREA)
Microelectronics & Electronic Packaging (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Manufacturing & Machinery (AREA)
Ceramic Engineering (AREA)
General Engineering & Computer Science (AREA)
Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Insulated Gate Type Field-Effect Transistor (AREA)
Design And Manufacture Of Integrated Circuits (AREA)
Thin Film Transistor (AREA)
Semiconductor Integrated Circuits (AREA)
Electrodes Of Semiconductors (AREA)

JP2014552360A 2012-01-13 2013-01-13 リニアＦｉｎＦＥＴ構造をもつ回路 Pending JP2015506589A (ja)

Applications Claiming Priority (5)

Application Number	Priority Date	Filing Date	Title
US201261586387P	2012-01-13	2012-01-13
US61/586,387		2012-01-13
US201261589224P	2012-01-20	2012-01-20
US61/589,224		2012-01-20
PCT/US2013/021345 WO2013106799A1 (en)	2012-01-13	2013-01-13	Circuits with linear finfet structures

Related Child Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2017176032A Division JP6467476B2 (ja)	2012-01-13	2017-09-13	リニアＦｉｎＦＥＴ構造をもつ回路

Publications (1)

Publication Number	Publication Date
JP2015506589A true JP2015506589A (ja)	2015-03-02

Family

ID=48781972

Family Applications (3)

Application Number	Title	Priority Date	Filing Date
JP2014552360A Pending JP2015506589A (ja)	2012-01-13	2013-01-13	リニアＦｉｎＦＥＴ構造をもつ回路
JP2017176032A Expired - Fee Related JP6467476B2 (ja)	2012-01-13	2017-09-13	リニアＦｉｎＦＥＴ構造をもつ回路
JP2019003098A Pending JP2019054297A (ja)	2012-01-13	2019-01-11	リニアＦｉｎＦＥＴ構造をもつ回路

Family Applications After (2)

Application Number	Title	Priority Date	Filing Date
JP2017176032A Expired - Fee Related JP6467476B2 (ja)	2012-01-13	2017-09-13	リニアＦｉｎＦＥＴ構造をもつ回路
JP2019003098A Pending JP2019054297A (ja)	2012-01-13	2019-01-11	リニアＦｉｎＦＥＴ構造をもつ回路

Country Status (8)

Country	Link
EP (1)	EP2803077A4 (zh)
JP (3)	JP2015506589A (zh)
KR (1)	KR101913457B1 (zh)
CN (2)	CN104303263B (zh)
AU (4)	AU2013207719B2 (zh)
SG (2)	SG11201404024YA (zh)
TW (4)	TWI581403B (zh)
WO (1)	WO2013106799A1 (zh)

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JP2019519110A (ja) *	2016-06-22	2019-07-04	クアルコム，インコーポレイテッド	フィンカウントに基づく拡散のための標準セルアーキテクチャ
JPWO2019003840A1 (ja) *	2017-06-27	2020-04-23	株式会社ソシオネクスト	半導体集積回路装置
JP2020519019A (ja) *	2017-05-01	2020-06-25	アドバンスト・マイクロ・ディバイシズ・インコーポレイテッドＡｄｖａｎｃｅｄＭｉｃｒｏＤｅｖｉｃｅｓＩｎｃｏｒｐｏｒａｔｅｄ	垂直ゲートオールアラウンドライブラリアーキテクチャ
KR20200118478A (ko) *	2018-04-19	2020-10-15	실리콘 스토리지 테크놀로지 인크	Finfet 구조를 갖는 스플릿 게이트 비휘발성 메모리 셀 및 로직 디바이스, 및 이를 제조하는 방법
JP7532551B2 (ja)	2020-05-12	2024-08-13	マイクロンテクノロジー，インク．	隣接機構間に導電性パイプを形成する方法及び隣接機構間に導電性パイプを有する集積アセンブリ

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JP6281570B2 (ja)	2013-08-23	2018-02-21	株式会社ソシオネクスト	半導体集積回路装置
JP6281572B2 (ja)	2013-09-04	2018-02-21	株式会社ソシオネクスト	半導体装置
JP6640965B2 (ja) *	2014-08-18	2020-02-05	ルネサスエレクトロニクス株式会社	半導体装置
JP6449082B2 (ja)	2014-08-18	2019-01-09	ルネサスエレクトロニクス株式会社	半導体装置
US9478541B2 (en) *	2014-09-08	2016-10-25	Qualcomm Incorporated	Half node scaling for vertical structures
US9607988B2 (en) *	2015-01-30	2017-03-28	Qualcomm Incorporated	Off-center gate cut
US9640480B2 (en) *	2015-05-27	2017-05-02	Qualcomm Incorporated	Cross-couple in multi-height sequential cells for uni-directional M1
US10177127B2 (en) *	2015-09-04	2019-01-08	Hong Kong Beida Jade Bird Display Limited	Semiconductor apparatus and method of manufacturing the same
US10541243B2 (en)	2015-11-19	2020-01-21	Samsung Electronics Co., Ltd.	Semiconductor device including a gate electrode and a conductive structure
US9748389B1 (en)	2016-03-25	2017-08-29	Taiwan Semiconductor Manufacturing Co., Ltd.	Method for semiconductor device fabrication with improved source drain epitaxy
US10262981B2 (en) *	2016-04-29	2019-04-16	Taiwan Semiconductor Manufacturing Company, Ltd.	Integrated circuit, system for and method of forming an integrated circuit
US9972571B1 (en) *	2016-12-15	2018-05-15	Taiwan Semiconductor Manufacturing Co., Ltd.	Logic cell structure and method
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US10503863B2 (en)	2017-08-30	2019-12-10	Taiwan Semiconductor Manufacturing Company, Ltd.	Integrated circuit and method of manufacturing same
WO2019059907A1 (en) *	2017-09-20	2019-03-28	Intel Corporation	HANDLING OF MULTIVERSION LIBRARY CELLS FROM WHICH INTEGRATED CIRCUIT STRUCTURES ARE MANUFACTURED
US10818762B2 (en) *	2018-05-25	2020-10-27	Advanced Micro Devices, Inc.	Gate contact over active region in cell
US11017146B2 (en) *	2018-07-16	2021-05-25	Taiwan Semiconductor Manufacturing Company, Ltd.	Integrated circuit and method of forming the same
US10878165B2 (en) *	2018-07-16	2020-12-29	Taiwan Semiconductor Manufacturing Company, Ltd.	Method for generating layout diagram including protruding pin cell regions and semiconductor device based on same
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AU2013207719B2 (en)	2016-02-25
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