JP2015506589A - リニアFinFET構造をもつ回路 - Google Patents
リニアFinFET構造をもつ回路 Download PDFInfo
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- JP2015506589A JP2015506589A JP2014552360A JP2014552360A JP2015506589A JP 2015506589 A JP2015506589 A JP 2015506589A JP 2014552360 A JP2014552360 A JP 2014552360A JP 2014552360 A JP2014552360 A JP 2014552360A JP 2015506589 A JP2015506589 A JP 2015506589A
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- 238000009792 diffusion process Methods 0.000 claims abstract description 629
- 239000000758 substrate Substances 0.000 claims abstract description 70
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- 239000004065 semiconductor Substances 0.000 claims description 87
- 238000004519 manufacturing process Methods 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 16
- 238000013500 data storage Methods 0.000 claims description 10
- 238000004590 computer program Methods 0.000 claims description 6
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- 101000931108 Mus musculus DNA (cytosine-5)-methyltransferase 1 Proteins 0.000 description 85
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 238000007792 addition Methods 0.000 description 2
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- 238000006467 substitution reaction Methods 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
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- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
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- 238000003860 storage Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823821—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0924—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/118—Masterslice integrated circuits
- H01L27/11803—Masterslice integrated circuits using field effect technology
- H01L27/11807—CMOS gate arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/6681—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET using dummy structures having essentially the same shape as the semiconductor body, e.g. to provide stability
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7809—Vertical DMOS transistors, i.e. VDMOS transistors having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261586387P | 2012-01-13 | 2012-01-13 | |
US61/586,387 | 2012-01-13 | ||
US201261589224P | 2012-01-20 | 2012-01-20 | |
US61/589,224 | 2012-01-20 | ||
PCT/US2013/021345 WO2013106799A1 (en) | 2012-01-13 | 2013-01-13 | Circuits with linear finfet structures |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017176032A Division JP6467476B2 (ja) | 2012-01-13 | 2017-09-13 | リニアFinFET構造をもつ回路 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2015506589A true JP2015506589A (ja) | 2015-03-02 |
Family
ID=48781972
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014552360A Pending JP2015506589A (ja) | 2012-01-13 | 2013-01-13 | リニアFinFET構造をもつ回路 |
JP2017176032A Expired - Fee Related JP6467476B2 (ja) | 2012-01-13 | 2017-09-13 | リニアFinFET構造をもつ回路 |
JP2019003098A Pending JP2019054297A (ja) | 2012-01-13 | 2019-01-11 | リニアFinFET構造をもつ回路 |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017176032A Expired - Fee Related JP6467476B2 (ja) | 2012-01-13 | 2017-09-13 | リニアFinFET構造をもつ回路 |
JP2019003098A Pending JP2019054297A (ja) | 2012-01-13 | 2019-01-11 | リニアFinFET構造をもつ回路 |
Country Status (8)
Country | Link |
---|---|
EP (1) | EP2803077A4 (zh) |
JP (3) | JP2015506589A (zh) |
KR (1) | KR101913457B1 (zh) |
CN (2) | CN104303263B (zh) |
AU (4) | AU2013207719B2 (zh) |
SG (2) | SG11201404024YA (zh) |
TW (4) | TWI581403B (zh) |
WO (1) | WO2013106799A1 (zh) |
Cited By (5)
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JP2019519110A (ja) * | 2016-06-22 | 2019-07-04 | クアルコム,インコーポレイテッド | フィンカウントに基づく拡散のための標準セルアーキテクチャ |
JPWO2019003840A1 (ja) * | 2017-06-27 | 2020-04-23 | 株式会社ソシオネクスト | 半導体集積回路装置 |
JP2020519019A (ja) * | 2017-05-01 | 2020-06-25 | アドバンスト・マイクロ・ディバイシズ・インコーポレイテッドAdvanced Micro Devices Incorporated | 垂直ゲートオールアラウンドライブラリアーキテクチャ |
KR20200118478A (ko) * | 2018-04-19 | 2020-10-15 | 실리콘 스토리지 테크놀로지 인크 | Finfet 구조를 갖는 스플릿 게이트 비휘발성 메모리 셀 및 로직 디바이스, 및 이를 제조하는 방법 |
JP7532551B2 (ja) | 2020-05-12 | 2024-08-13 | マイクロン テクノロジー,インク. | 隣接機構間に導電性パイプを形成する方法及び隣接機構間に導電性パイプを有する集積アセンブリ |
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JP6281570B2 (ja) | 2013-08-23 | 2018-02-21 | 株式会社ソシオネクスト | 半導体集積回路装置 |
JP6281572B2 (ja) | 2013-09-04 | 2018-02-21 | 株式会社ソシオネクスト | 半導体装置 |
JP6640965B2 (ja) * | 2014-08-18 | 2020-02-05 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP6449082B2 (ja) | 2014-08-18 | 2019-01-09 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US9478541B2 (en) * | 2014-09-08 | 2016-10-25 | Qualcomm Incorporated | Half node scaling for vertical structures |
US9607988B2 (en) * | 2015-01-30 | 2017-03-28 | Qualcomm Incorporated | Off-center gate cut |
US9640480B2 (en) * | 2015-05-27 | 2017-05-02 | Qualcomm Incorporated | Cross-couple in multi-height sequential cells for uni-directional M1 |
US10177127B2 (en) * | 2015-09-04 | 2019-01-08 | Hong Kong Beida Jade Bird Display Limited | Semiconductor apparatus and method of manufacturing the same |
US10541243B2 (en) | 2015-11-19 | 2020-01-21 | Samsung Electronics Co., Ltd. | Semiconductor device including a gate electrode and a conductive structure |
US9748389B1 (en) | 2016-03-25 | 2017-08-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for semiconductor device fabrication with improved source drain epitaxy |
US10262981B2 (en) * | 2016-04-29 | 2019-04-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit, system for and method of forming an integrated circuit |
US9972571B1 (en) * | 2016-12-15 | 2018-05-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Logic cell structure and method |
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US10503863B2 (en) | 2017-08-30 | 2019-12-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit and method of manufacturing same |
WO2019059907A1 (en) * | 2017-09-20 | 2019-03-28 | Intel Corporation | HANDLING OF MULTIVERSION LIBRARY CELLS FROM WHICH INTEGRATED CIRCUIT STRUCTURES ARE MANUFACTURED |
US10818762B2 (en) * | 2018-05-25 | 2020-10-27 | Advanced Micro Devices, Inc. | Gate contact over active region in cell |
US11017146B2 (en) * | 2018-07-16 | 2021-05-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit and method of forming the same |
US10878165B2 (en) * | 2018-07-16 | 2020-12-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for generating layout diagram including protruding pin cell regions and semiconductor device based on same |
US11030372B2 (en) | 2018-10-31 | 2021-06-08 | Taiwan Semiconductor Manufacturing Company Ltd. | Method for generating layout diagram including cell having pin patterns and semiconductor device based on same |
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US11862620B2 (en) * | 2020-09-15 | 2024-01-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Power gating cell structure |
Citations (9)
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JP7343395B2 (ja) | 2017-05-01 | 2023-09-12 | アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド | 垂直ゲートオールアラウンドライブラリアーキテクチャ |
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JP7054013B2 (ja) | 2017-06-27 | 2022-04-13 | 株式会社ソシオネクスト | 半導体集積回路装置 |
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KR102444902B1 (ko) | 2018-04-19 | 2022-09-16 | 실리콘 스토리지 테크놀로지 인크 | Finfet 구조를 갖는 스플릿 게이트 비휘발성 메모리 셀 및 로직 디바이스, 및 이를 제조하는 방법 |
JP7532551B2 (ja) | 2020-05-12 | 2024-08-13 | マイクロン テクノロジー,インク. | 隣接機構間に導電性パイプを形成する方法及び隣接機構間に導電性パイプを有する集積アセンブリ |
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AU2020201521A1 (en) | 2020-03-19 |
TW201717355A (zh) | 2017-05-16 |
SG10201605564WA (en) | 2016-09-29 |
KR20140114424A (ko) | 2014-09-26 |
TW201803084A (zh) | 2018-01-16 |
JP2017224858A (ja) | 2017-12-21 |
CN107424999A (zh) | 2017-12-01 |
AU2016202229B2 (en) | 2018-02-15 |
AU2013207719A1 (en) | 2014-07-31 |
CN104303263A (zh) | 2015-01-21 |
EP2803077A1 (en) | 2014-11-19 |
TWI608593B (zh) | 2017-12-11 |
TW201642440A (zh) | 2016-12-01 |
JP6467476B2 (ja) | 2019-02-13 |
AU2018200549B2 (en) | 2019-12-05 |
KR101913457B1 (ko) | 2018-10-30 |
WO2013106799A1 (en) | 2013-07-18 |
EP2803077A4 (en) | 2015-11-04 |
TWI552307B (zh) | 2016-10-01 |
AU2016202229A1 (en) | 2016-05-05 |
AU2013207719B2 (en) | 2016-02-25 |
SG11201404024YA (en) | 2014-08-28 |
AU2018200549A1 (en) | 2018-02-15 |
CN104303263B (zh) | 2016-12-14 |
TWI581403B (zh) | 2017-05-01 |
TW201349451A (zh) | 2013-12-01 |
JP2019054297A (ja) | 2019-04-04 |
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