EP2803077A4 - Circuits with linear finfet structures - Google Patents
Circuits with linear finfet structuresInfo
- Publication number
- EP2803077A4 EP2803077A4 EP13735704.2A EP13735704A EP2803077A4 EP 2803077 A4 EP2803077 A4 EP 2803077A4 EP 13735704 A EP13735704 A EP 13735704A EP 2803077 A4 EP2803077 A4 EP 2803077A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- circuits
- finfet structures
- linear
- linear finfet
- structures
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28123—Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823821—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0924—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/118—Masterslice integrated circuits
- H01L27/11803—Masterslice integrated circuits using field effect technology
- H01L27/11807—CMOS gate arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/6681—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET using dummy structures having essentially the same shape as the semiconductor body, e.g. to provide stability
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7809—Vertical DMOS transistors, i.e. VDMOS transistors having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261586387P | 2012-01-13 | 2012-01-13 | |
US201261589224P | 2012-01-20 | 2012-01-20 | |
PCT/US2013/021345 WO2013106799A1 (en) | 2012-01-13 | 2013-01-13 | Circuits with linear finfet structures |
Publications (2)
Publication Number | Publication Date |
---|---|
EP2803077A1 EP2803077A1 (en) | 2014-11-19 |
EP2803077A4 true EP2803077A4 (en) | 2015-11-04 |
Family
ID=48781972
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP13735704.2A Withdrawn EP2803077A4 (en) | 2012-01-13 | 2013-01-13 | Circuits with linear finfet structures |
Country Status (8)
Country | Link |
---|---|
EP (1) | EP2803077A4 (en) |
JP (3) | JP2015506589A (en) |
KR (1) | KR101913457B1 (en) |
CN (2) | CN104303263B (en) |
AU (4) | AU2013207719B2 (en) |
SG (2) | SG10201605564WA (en) |
TW (4) | TWI552307B (en) |
WO (1) | WO2013106799A1 (en) |
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WO2015025441A1 (en) | 2013-08-23 | 2015-02-26 | パナソニック株式会社 | Semiconductor integrated circuit device |
CN108922887B (en) * | 2013-09-04 | 2022-12-09 | 株式会社索思未来 | Semiconductor device with a plurality of semiconductor chips |
JP6640965B2 (en) * | 2014-08-18 | 2020-02-05 | ルネサスエレクトロニクス株式会社 | Semiconductor device |
JP6449082B2 (en) | 2014-08-18 | 2019-01-09 | ルネサスエレクトロニクス株式会社 | Semiconductor device |
US9478541B2 (en) * | 2014-09-08 | 2016-10-25 | Qualcomm Incorporated | Half node scaling for vertical structures |
US9607988B2 (en) | 2015-01-30 | 2017-03-28 | Qualcomm Incorporated | Off-center gate cut |
US9640480B2 (en) * | 2015-05-27 | 2017-05-02 | Qualcomm Incorporated | Cross-couple in multi-height sequential cells for uni-directional M1 |
US10177127B2 (en) * | 2015-09-04 | 2019-01-08 | Hong Kong Beida Jade Bird Display Limited | Semiconductor apparatus and method of manufacturing the same |
US10541243B2 (en) | 2015-11-19 | 2020-01-21 | Samsung Electronics Co., Ltd. | Semiconductor device including a gate electrode and a conductive structure |
US9748389B1 (en) | 2016-03-25 | 2017-08-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for semiconductor device fabrication with improved source drain epitaxy |
US10262981B2 (en) * | 2016-04-29 | 2019-04-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit, system for and method of forming an integrated circuit |
US10366196B2 (en) * | 2016-06-22 | 2019-07-30 | Qualcomm Incorporated | Standard cell architecture for diffusion based on fin count |
US9972571B1 (en) * | 2016-12-15 | 2018-05-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Logic cell structure and method |
US10186510B2 (en) * | 2017-05-01 | 2019-01-22 | Advanced Micro Devices, Inc. | Vertical gate all around library architecture |
KR102336784B1 (en) | 2017-06-09 | 2021-12-07 | 삼성전자주식회사 | Semiconductor device |
WO2019003840A1 (en) * | 2017-06-27 | 2019-01-03 | 株式会社ソシオネクスト | Semiconductor integrated circuit device |
US10503863B2 (en) | 2017-08-30 | 2019-12-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit and method of manufacturing same |
WO2019059907A1 (en) * | 2017-09-20 | 2019-03-28 | Intel Corporation | Multi version library cell handling and integrated circuit structures fabricated therefrom |
US10468428B1 (en) * | 2018-04-19 | 2019-11-05 | Silicon Storage Technology, Inc. | Split gate non-volatile memory cells and logic devices with FinFET structure, and method of making same |
US10818762B2 (en) * | 2018-05-25 | 2020-10-27 | Advanced Micro Devices, Inc. | Gate contact over active region in cell |
US10878165B2 (en) * | 2018-07-16 | 2020-12-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for generating layout diagram including protruding pin cell regions and semiconductor device based on same |
US11017146B2 (en) * | 2018-07-16 | 2021-05-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit and method of forming the same |
US11093684B2 (en) * | 2018-10-31 | 2021-08-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Power rail with non-linear edge |
US11030372B2 (en) | 2018-10-31 | 2021-06-08 | Taiwan Semiconductor Manufacturing Company Ltd. | Method for generating layout diagram including cell having pin patterns and semiconductor device based on same |
US10796061B1 (en) * | 2019-08-29 | 2020-10-06 | Advanced Micro Devices, Inc. | Standard cell and power grid architectures with EUV lithography |
US11862620B2 (en) * | 2020-09-15 | 2024-01-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Power gating cell structure |
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US20080001176A1 (en) * | 2006-06-29 | 2008-01-03 | Kailash Gopalakrishnan | Multi-bit high-density memory device and architecture and method of fabricating multi-bit high-density memory devices |
US20080308880A1 (en) * | 2007-06-15 | 2008-12-18 | Kabushiki Kaisha Toshiba | Semiconductor device |
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US20100301482A1 (en) * | 2009-06-01 | 2010-12-02 | Globalfoundries Inc. | Sram bit cell with self-aligned bidirectional local interconnects |
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-
2013
- 2013-01-13 WO PCT/US2013/021345 patent/WO2013106799A1/en active Application Filing
- 2013-01-13 SG SG10201605564WA patent/SG10201605564WA/en unknown
- 2013-01-13 EP EP13735704.2A patent/EP2803077A4/en not_active Withdrawn
- 2013-01-13 JP JP2014552360A patent/JP2015506589A/en active Pending
- 2013-01-13 KR KR1020147022592A patent/KR101913457B1/en active IP Right Grant
- 2013-01-13 SG SG11201404024YA patent/SG11201404024YA/en unknown
- 2013-01-13 CN CN201380013824.6A patent/CN104303263B/en not_active Expired - Fee Related
- 2013-01-13 CN CN201611023356.2A patent/CN107424999A/en active Pending
- 2013-01-13 AU AU2013207719A patent/AU2013207719B2/en not_active Ceased
- 2013-01-14 TW TW102101384A patent/TWI552307B/en not_active IP Right Cessation
- 2013-01-14 TW TW106104453A patent/TWI608593B/en not_active IP Right Cessation
- 2013-01-14 TW TW106134477A patent/TW201803084A/en unknown
- 2013-01-14 TW TW105125226A patent/TWI581403B/en not_active IP Right Cessation
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2016
- 2016-04-11 AU AU2016202229A patent/AU2016202229B2/en not_active Ceased
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2017
- 2017-09-13 JP JP2017176032A patent/JP6467476B2/en not_active Expired - Fee Related
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2018
- 2018-01-23 AU AU2018200549A patent/AU2018200549B2/en not_active Ceased
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2019
- 2019-01-11 JP JP2019003098A patent/JP2019054297A/en active Pending
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2020
- 2020-03-02 AU AU2020201521A patent/AU2020201521A1/en not_active Abandoned
Patent Citations (6)
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Publication number | Publication date |
---|---|
SG10201605564WA (en) | 2016-09-29 |
CN104303263B (en) | 2016-12-14 |
JP2015506589A (en) | 2015-03-02 |
AU2016202229B2 (en) | 2018-02-15 |
CN107424999A (en) | 2017-12-01 |
CN104303263A (en) | 2015-01-21 |
JP2017224858A (en) | 2017-12-21 |
JP2019054297A (en) | 2019-04-04 |
TW201717355A (en) | 2017-05-16 |
WO2013106799A1 (en) | 2013-07-18 |
TWI608593B (en) | 2017-12-11 |
SG11201404024YA (en) | 2014-08-28 |
TW201349451A (en) | 2013-12-01 |
KR20140114424A (en) | 2014-09-26 |
TW201642440A (en) | 2016-12-01 |
AU2020201521A1 (en) | 2020-03-19 |
TW201803084A (en) | 2018-01-16 |
AU2016202229A1 (en) | 2016-05-05 |
EP2803077A1 (en) | 2014-11-19 |
TWI552307B (en) | 2016-10-01 |
AU2013207719B2 (en) | 2016-02-25 |
KR101913457B1 (en) | 2018-10-30 |
AU2018200549B2 (en) | 2019-12-05 |
AU2013207719A1 (en) | 2014-07-31 |
AU2018200549A1 (en) | 2018-02-15 |
JP6467476B2 (en) | 2019-02-13 |
TWI581403B (en) | 2017-05-01 |
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