JP2015213152A - ポリマーマトリクスを有するインターポーザのフレーム及び作製方法 - Google Patents
ポリマーマトリクスを有するインターポーザのフレーム及び作製方法 Download PDFInfo
- Publication number
- JP2015213152A JP2015213152A JP2014250272A JP2014250272A JP2015213152A JP 2015213152 A JP2015213152 A JP 2015213152A JP 2014250272 A JP2014250272 A JP 2014250272A JP 2014250272 A JP2014250272 A JP 2014250272A JP 2015213152 A JP2015213152 A JP 2015213152A
- Authority
- JP
- Japan
- Prior art keywords
- chip
- array
- copper
- sockets
- socket
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920000642 polymer Polymers 0.000 title claims abstract description 56
- 239000011159 matrix material Substances 0.000 title claims abstract description 45
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 87
- 229910052802 copper Inorganic materials 0.000 claims abstract description 87
- 239000010949 copper Substances 0.000 claims abstract description 87
- 229910052751 metal Inorganic materials 0.000 claims abstract description 28
- 239000002184 metal Substances 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims description 61
- 229920002120 photoresistant polymer Polymers 0.000 claims description 26
- 238000007747 plating Methods 0.000 claims description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 11
- 239000003365 glass fiber Substances 0.000 claims description 10
- 230000004888 barrier function Effects 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 4
- 238000003754 machining Methods 0.000 claims description 3
- 230000002934 lysing effect Effects 0.000 claims description 2
- 238000004080 punching Methods 0.000 claims description 2
- 230000002829 reductive effect Effects 0.000 abstract description 5
- 238000004904 shortening Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 48
- 238000010586 diagram Methods 0.000 description 22
- 238000005516 engineering process Methods 0.000 description 22
- 235000012431 wafers Nutrition 0.000 description 13
- 239000002131 composite material Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 238000009713 electroplating Methods 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 239000000835 fiber Substances 0.000 description 5
- 229920002430 Fibre-reinforced plastic Polymers 0.000 description 4
- 238000003491 array Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000005553 drilling Methods 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011151 fibre-reinforced plastic Substances 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 239000011253 protective coating Substances 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
- 239000012783 reinforcing fiber Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 230000003090 exacerbative effect Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910001174 tin-lead alloy Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/19—Manufacturing methods of high density interconnect preforms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/224—Housing; Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
- H01L23/055—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads having a passage through the base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/568—Temporary substrate used as encapsulation process aid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/19—Manufacturing methods of high density interconnect preforms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/20—Structure, shape, material or disposition of high density interconnect preforms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3511—Warping
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
Abstract
Description
犠牲キャリアを入手し;
フォトレジストの層を敷設し、銅ビアのグリッドでパターニングし;
銅をグリッドにメッキし;
ポリマー誘電体で積層し;
銅ビアの端部を露出するために、薄く且つ平坦化し;
キャリアを除去し;及び
ポリマー誘電体内にチップソケットを機械加工すること、を含む。
犠牲キャリアを入手し;
フォトレジストの層を敷設し、銅ビアのグリッド及びチップソケットアレイでパターニングし;
銅をグリッド及びアレイにメッキし;
ポリマー誘電体で積層し;
銅ビアの端部及びアレイを露出するために、薄く且つ平坦化し;
銅ビアの端部を遮蔽し;
アレイを溶解し;
キャリアを除去すること、を含む。
12 チップソケット
14、210 ビア
16、18、38、202 フレーム
20 パネル
21、22、23、24 ブロック
25 水平方向バー
26 垂直方向バー
27 外部フレーム
28、29 チップソケット
35、55 チップ
36 ポリマー
40 フレームワーク
42、43 ルーティング層
45 ダイシングツール
48 ダイパッケージ
57 半田ボール
80 銅キャリア
82 シード層
84 耐エッチング層
86 更なる銅シード層
88 フォトレジスト層
90 銅ビア
92 ポリマー誘電体
94 エッチング防止剤層
100 銅クラッド積層体
102 孔
104 貫通孔
106、108 表面銅層
110 積層体
112、204 ソケット
200 コイル
206、207、208 ビアポスト
209、210 垂直要素
Claims (28)
- 有機マトリクスフレームワークを通るソケットを囲み、該有機マトリクスフレームワークを通る金属ビアのグリッドを更に含む該有機マトリクスフレームワークによって、画定されるチップソケットのアレイ。
- 各チップソケットは、前記フレームを通る銅ビアを含む有機マトリクスのフレームで囲まれる、請求項1に記載のチップソケットのアレイ。
- 前記有機マトリクスフレームワークは、ガラス繊維束を更に含む、請求項1に記載のチップソケットのアレイ。
- 前記銅ビアは、ビアポストである、請求項1に記載のチップソケットのアレイ。
- 各ビアは、幅の範囲が、25ミクロン〜500ミクロンである、請求項1に記載のチップソケットのアレイ。
- 各ビアは、円筒形であり、直径の範囲が、25ミクロン〜500ミクロンである、請求項1に記載のチップソケットのアレイ。
- 少なくとも1個のソケット周りのフレームは、交互のビアポストとフィーチャ層を含み、少なくとも1層のビアポスト層及び少なくとも1層のフィーチャ層を含む、請求項7に記載のチップソケットのアレイ。
- 前記有機マトリクスフレームワークを通る金属ビアのグリッドは、複数のビア層を含む、請求項1に記載のチップソケットのアレイ。
- 少なくとも1個のソケット周りのフレームは、少なくとも1層のビアポスト層と少なくとも1層のフィーチャ層に亘る交互のビアポストとフィーチャ層の連続コイルを含む、請求項7に記載のチップソケットのアレイ。
- 前記ビアポストは、細長ビアポストを含む、請求項7に記載のアレイ。
- 細長ビアポストの前記連続コイルは、複数のビアポスト層に亘る、請求項9に記載のチップソケットのアレイ。
- 異なる寸法の隣接チップソケットを含む、請求項1に記載のチップソケットのアレイ。
- 異なるサイズの隣接チップソケットを含む、請求項12に記載のチップソケットのアレイ。
- 異なる形の隣接チップソケットを含む、請求項12に記載のチップソケットのアレイ。
- チップソケットのアレイを含むパネルであり、該チップソケットは其々、有機マトリクスフレームワークを通る銅ビアのグリッドを含む前記有機マトリクスフレームワークによって囲まれ、画定されるパネルであって、前記パネルは、1種類のチップを受容するための第1寸法組を有するソケットを持つ少なくとも1つの領域、及び別の種類のチップを受容するための第2寸法組を有するソケットを持つ別の領域を含む、パネル。
- 有機マトリクスフレームワークによって囲まれるチップソケットのアレイを作製する方法であって、該方法は:
犠牲キャリアを入手し;
フォトレジストの層を敷設し、銅ビアポストのグリッドでパターニングし;
銅を前記グリッドにメッキし;
ポリマー誘電体で積層し;
銅ビアの端部を露出するために、薄く且つ平坦化し;
前記キャリアを除去し;
前記ポリマー誘電体内にチップソケットを機械加工すること、を含む方法。 - 前記キャリアは、前記銅を溶解することによって除去される銅キャリアである、請求項16に記載の方法。
- 前記銅ビアポストを堆積する前に、耐エッチング層を前記キャリア上に塗布することを更に含む、請求項16に記載の方法。
- 前記耐エッチング層は、ニッケルを含む、請求項16に記載の方法。
- 銅ビアポストの端部を露出した状態の、前記平坦化されたポリマー誘電体は、銅キャリアがエッチング除去される間、耐エッチング材で保護される、請求項16に記載の方法。
- 前記耐エッチング材は、フォトレジストである、請求項20に記載の方法。
- 銅シード層は、ニッケル上に電気メッキされる、請求項18に記載の方法。
- 銅シード層は、前記ニッケルバリア層を堆積する前に、電気メッキされる、請求項18に記載の方法。
- 前記グリッドは、フレームワークを残してソケットを打ち抜くこと、又はCNCのどちらかによって、機械加工される、請求項16に記載の方法。
- 有機マトリクスフレームワークによって囲まれるチップソケットのアレイを作製する方法であって、該方法は:
犠牲キャリアを入手し;
フォトレジストの層を敷設し、銅ビアポストのグリッド及びチップソケットアレイでパターニングし;
銅を前記グリッド及び前記アレイにメッキし;
ポリマー誘電体で積層し;
銅ビアの端部及び前記アレイを露出するために、薄く且つ平坦化し;
前記銅ビアポストの前記端部を遮蔽し;
前記アレイを溶解し;
前記キャリアを除去すること、を含む方法。 - 前記ビアポストは、細長ビアポストであり、埋め込まれた金属構造体を有する有機マトリクスフレームによって囲まれた少なくとも1個のチップソケットは、少なくとも1つの細長ビアポスト及び少なくとも1層のフィーチャ層を含む、請求項25に記載の方法。
- 前記細長ビアポスト及びフィーチャ層は、連続コイルを含む、請求項25に記載の方法。
- 少なくとも1個のソケットは、有機フレームによって、及び該有機フレーム内に埋め込まれ、複数の延伸するビアポスト層を含む多層金属構造体によって、隣接するビアポスト層の各対が、フィーチャ層によって分離され、前記多層金属構造体が連続コイルを含むように、囲まれる、請求項25に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/269,884 US20150296617A1 (en) | 2014-04-09 | 2014-05-05 | Interposer frame with polymer matrix and methods of fabrication |
US14/269,884 | 2014-05-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2015213152A true JP2015213152A (ja) | 2015-11-26 |
Family
ID=52162346
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014250272A Pending JP2015213152A (ja) | 2014-05-05 | 2014-12-10 | ポリマーマトリクスを有するインターポーザのフレーム及び作製方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2015213152A (ja) |
KR (2) | KR101670666B1 (ja) |
CN (1) | CN104270885A (ja) |
TW (1) | TWI652864B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020021666A1 (ja) | 2018-07-25 | 2020-01-30 | 株式会社Fuji | 決定装置及びこれを備えるチップ装着装置 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101951284B1 (ko) * | 2017-07-04 | 2019-02-22 | 주식회사 이노글로벌 | 초정밀 가공기술을 활용한 검사용 인터포저 지지 프레임의 제조방법 |
Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003229656A (ja) * | 2002-02-04 | 2003-08-15 | Nec Access Technica Ltd | はんだパターン形成方法及び多面取り回路基板 |
JP2007324565A (ja) * | 2006-06-01 | 2007-12-13 | Advanced Multilayer Interconnect Technologies Ltd | 高性能多層コアレス支持構造物とその加工 |
JP2009004584A (ja) * | 2007-06-22 | 2009-01-08 | Panasonic Corp | 部品内蔵モジュールおよびその製造方法 |
JP2009231752A (ja) * | 2008-03-25 | 2009-10-08 | Shinko Electric Ind Co Ltd | 配線基板の製造方法 |
JP2009295643A (ja) * | 2008-06-02 | 2009-12-17 | Toshiba Corp | 多層プリント配線基板 |
JP2012256675A (ja) * | 2011-06-08 | 2012-12-27 | Shinko Electric Ind Co Ltd | 配線基板、半導体装置及びその製造方法 |
JP2013055109A (ja) * | 2011-09-01 | 2013-03-21 | Fujikura Ltd | 部品内蔵基板およびその製造方法 |
JPWO2011058879A1 (ja) * | 2009-11-12 | 2013-03-28 | 日本電気株式会社 | 機能素子内蔵基板、機能素子内蔵基板の製造方法、及び、配線基板 |
JP5400235B1 (ja) * | 2012-11-09 | 2014-01-29 | 太陽誘電株式会社 | 電子部品内蔵基板 |
JP2014022716A (ja) * | 2012-07-23 | 2014-02-03 | Zhuhai Advanced Chip Carriers & Electronic Substrates Solutions Technologies Co Ltd | 一体的構成要素を備えた多層電子支持構造体 |
JP2014036188A (ja) * | 2012-08-10 | 2014-02-24 | Dainippon Printing Co Ltd | キャビティを有する多層配線基板及びその製造方法 |
JP2014056925A (ja) * | 2012-09-12 | 2014-03-27 | Shinko Electric Ind Co Ltd | 半導体パッケージ、半導体装置及び半導体パッケージの製造方法 |
JP2014072279A (ja) * | 2012-09-28 | 2014-04-21 | Dainippon Printing Co Ltd | 部品内蔵配線基板の製造方法 |
WO2014065035A1 (ja) * | 2012-10-22 | 2014-05-01 | 株式会社村田製作所 | 電子部品内蔵モジュール |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6849932B2 (en) * | 2002-09-03 | 2005-02-01 | Ultratera Corporation | Double-sided thermally enhanced IC chip package |
TWI573201B (zh) * | 2008-07-18 | 2017-03-01 | 聯測總部私人有限公司 | 封裝結構性元件 |
JP5652470B2 (ja) * | 2010-03-03 | 2015-01-14 | 株式会社村田製作所 | 無線通信モジュール及び無線通信デバイス |
JP4978709B2 (ja) * | 2010-03-12 | 2012-07-18 | 大日本印刷株式会社 | 電子部品内蔵配線基板 |
JP6051359B2 (ja) * | 2010-12-22 | 2016-12-27 | 俊 保坂 | コア付きインダクタ素子およびその製造方法 |
WO2012122388A2 (en) * | 2011-03-08 | 2012-09-13 | Georgia Tech Research Corporation | Chip-last embedded interconnect structures and methods of making the same |
US9137905B2 (en) * | 2012-06-25 | 2015-09-15 | Zhuhai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co. Ltd. | Alignment between layers of multilayer electronic support structures |
US9240392B2 (en) * | 2014-04-09 | 2016-01-19 | Zhuhai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co., Ltd. | Method for fabricating embedded chips |
-
2014
- 2014-09-25 CN CN201410498486.6A patent/CN104270885A/zh active Pending
- 2014-09-26 TW TW103133412A patent/TWI652864B/zh active
- 2014-09-29 KR KR1020140129904A patent/KR101670666B1/ko active IP Right Grant
- 2014-12-10 JP JP2014250272A patent/JP2015213152A/ja active Pending
-
2016
- 2016-09-21 KR KR1020160120381A patent/KR101770148B1/ko active IP Right Grant
Patent Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003229656A (ja) * | 2002-02-04 | 2003-08-15 | Nec Access Technica Ltd | はんだパターン形成方法及び多面取り回路基板 |
JP2007324565A (ja) * | 2006-06-01 | 2007-12-13 | Advanced Multilayer Interconnect Technologies Ltd | 高性能多層コアレス支持構造物とその加工 |
JP2009004584A (ja) * | 2007-06-22 | 2009-01-08 | Panasonic Corp | 部品内蔵モジュールおよびその製造方法 |
JP2009231752A (ja) * | 2008-03-25 | 2009-10-08 | Shinko Electric Ind Co Ltd | 配線基板の製造方法 |
JP2009295643A (ja) * | 2008-06-02 | 2009-12-17 | Toshiba Corp | 多層プリント配線基板 |
JPWO2011058879A1 (ja) * | 2009-11-12 | 2013-03-28 | 日本電気株式会社 | 機能素子内蔵基板、機能素子内蔵基板の製造方法、及び、配線基板 |
JP2012256675A (ja) * | 2011-06-08 | 2012-12-27 | Shinko Electric Ind Co Ltd | 配線基板、半導体装置及びその製造方法 |
JP2013055109A (ja) * | 2011-09-01 | 2013-03-21 | Fujikura Ltd | 部品内蔵基板およびその製造方法 |
JP2014022716A (ja) * | 2012-07-23 | 2014-02-03 | Zhuhai Advanced Chip Carriers & Electronic Substrates Solutions Technologies Co Ltd | 一体的構成要素を備えた多層電子支持構造体 |
JP2014036188A (ja) * | 2012-08-10 | 2014-02-24 | Dainippon Printing Co Ltd | キャビティを有する多層配線基板及びその製造方法 |
JP2014056925A (ja) * | 2012-09-12 | 2014-03-27 | Shinko Electric Ind Co Ltd | 半導体パッケージ、半導体装置及び半導体パッケージの製造方法 |
JP2014072279A (ja) * | 2012-09-28 | 2014-04-21 | Dainippon Printing Co Ltd | 部品内蔵配線基板の製造方法 |
WO2014065035A1 (ja) * | 2012-10-22 | 2014-05-01 | 株式会社村田製作所 | 電子部品内蔵モジュール |
JP5400235B1 (ja) * | 2012-11-09 | 2014-01-29 | 太陽誘電株式会社 | 電子部品内蔵基板 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020021666A1 (ja) | 2018-07-25 | 2020-01-30 | 株式会社Fuji | 決定装置及びこれを備えるチップ装着装置 |
EP3828917A4 (en) * | 2018-07-25 | 2021-08-04 | Fuji Corporation | DETERMINATION DEVICE AND CHIP INSTALLATION DEVICE EQUIPPED WITH IT |
Also Published As
Publication number | Publication date |
---|---|
KR101670666B1 (ko) | 2016-10-31 |
TWI652864B (zh) | 2019-03-01 |
CN104270885A (zh) | 2015-01-07 |
KR20150126764A (ko) | 2015-11-13 |
TW201543776A (zh) | 2015-11-16 |
KR20160114016A (ko) | 2016-10-04 |
KR101770148B1 (ko) | 2017-08-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6090295B2 (ja) | 埋め込みチップを作製する方法 | |
TWI658542B (zh) | 具有矩形空腔陣列的聚合物框架的製造方法 | |
US9949373B2 (en) | Interposer frame with polymer matrix and methods of fabrication | |
JP2015198246A (ja) | 埋め込みチップ | |
US10446335B2 (en) | Polymer frame for a chip, such that the frame comprises at least one via in series with a capacitor | |
JP6695066B2 (ja) | フレームがコンデンサと直列に少なくとも1個のビアを備えるようなチップ用のポリマーフレーム | |
JP2013251520A (ja) | 一体的ファラデーシールドを備えた多層電子構造体 | |
JP6590179B2 (ja) | 多層複合電子構造体の側面を終端する方法 | |
KR20170004917A (ko) | 칩 패키지 | |
JP6459107B2 (ja) | 多層電子支持構造体の製作方法 | |
KR101770148B1 (ko) | 폴리머 매트릭스를 가진 인터포저 프레임 | |
KR20150126767A (ko) | 폴리머 프레임이 커패시터와 직렬인 적어도 하나의 비아를 구비하도록 하는, 칩용 폴리머 프레임 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150129 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20171208 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180413 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180816 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180828 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181128 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181219 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190319 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20190618 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20190819 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190904 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20191106 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200122 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20200331 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200729 |
|
C60 | Trial request (containing other claim documents, opposition documents) |
Free format text: JAPANESE INTERMEDIATE CODE: C60 Effective date: 20200729 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20200805 |
|
C21 | Notice of transfer of a case for reconsideration by examiners before appeal proceedings |
Free format text: JAPANESE INTERMEDIATE CODE: C21 Effective date: 20200811 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20200828 |
|
C211 | Notice of termination of reconsideration by examiners before appeal proceedings |
Free format text: JAPANESE INTERMEDIATE CODE: C211 Effective date: 20200903 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20201015 |
|
C22 | Notice of designation (change) of administrative judge |
Free format text: JAPANESE INTERMEDIATE CODE: C22 Effective date: 20210104 |
|
C13 | Notice of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: C13 Effective date: 20210309 |
|
C23 | Notice of termination of proceedings |
Free format text: JAPANESE INTERMEDIATE CODE: C23 Effective date: 20210713 |
|
C03 | Trial/appeal decision taken |
Free format text: JAPANESE INTERMEDIATE CODE: C03 Effective date: 20210831 |
|
C30A | Notification sent |
Free format text: JAPANESE INTERMEDIATE CODE: C3012 Effective date: 20210907 |