JP2015156522A - 蛍光体コートledのパッケージング方法と装置 - Google Patents
蛍光体コートledのパッケージング方法と装置 Download PDFInfo
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Abstract
Description
ある具体例において、方法は、さらに、蛍光体層をモールディングする工程を含み、蛍光体層は、個々のLED上に設置される複数の所定のセグメントを有する。ある具体例において、所定のセグメントは、それぞれ、凹V字型、凹U字型および凹W字型を有する。ある具体例において、所定のセグメントは、それぞれ、凸面ドーム状の形状を有する。
105 テープ
110 半導体フォトニックダイ
120A、120B 導電端子
60B 導電パッド
150 光変換材料
155 ダイシングプロセス
160 チップ
165 新しいテープ
170 モールディングステンシル
175B 上表面
175C 上表面
175D 上表面
178 反射層
185 PCB回路基板
186 ライトチューブ
187 ハウジング
188 ヒートシンク
190 LED照明モジュール
200 LED照明モジュール
240A マルチチップ照明ユニット
240B 単一チップ照明ユニット
250 サポート素子
260 拡散キャップ
270 光学ゲル
300 熱散逸構造
310 フィン
400 方法
500 照明装置
510 ベース
520 本体
530 照明アセンブリ
Claims (28)
- テープを複数のLEDに取り付け、前記テープを基板上に設ける工程と、
蛍光体薄膜を前記複数のLEDにコートする工程と、
前記蛍光体薄膜を硬化させる工程と、
前記硬化工程後、前記基板を除去する工程、および、
前記基板除去後、前記LEDを単一化する工程、
を含むことを特徴とする発光ダイオード(LED)のパッケージ方法。 - 前記基板の除去、前記基板がリサイクルされるように行うことを特徴とする請求項1に記載の方法。
- 前記基板除去前に、モールディングステンシルで、前記蛍光体薄膜の形状を決めるモールディング工程をさらに含むことを特徴とする請求項1に記載の方法。
- 前記モールディングが行われて、前記蛍光体薄膜が、それぞれ、凹V字型、凹W字型および凹U字型、複数のドーム型のどれかである複数の部分を形成し、前記蛍光体薄膜の各部分が、それぞれ、異なる前記LED上に設けられることを特徴とする請求項3に記載の方法。
- 前記蛍光体薄膜の硬化後、前記基板の除去前、前記蛍光体薄膜上に反射層を形成する工程をさらに含むことを特徴とする請求項4に記載の方法。
- 前記モールディングが行われて、前記蛍光体薄膜が、それぞれが凸面ドーム状形状を有する複数の部分を形成し、前記蛍光体薄膜の各部分が、それぞれ、異なる前記LEDに設けられることを特徴とする請求項3に記載の方法。
- 前記単一化工程は、さらに、LED間の領域を機械的に切断し、LEDを分離する工程を含むことを特徴とする請求項1に記載の方法。
- LEDの群を複数のビンにビニングする工程と、
前記複数のビンのサブセット中のLEDを、前記テープに取り付けられる前記複数のLEDとして選択する工程と、
をさらに含むことを特徴とする請求項1に記載の方法。 - 接着テープ上に複数のLEDを載置し、前記テープを基板上に載置する、前記基板は、ガラス基板、シリコン基板、セラミック基板および窒化ガリウム基板のどれかである工程と、
蛍光体層を前記複数のLEDにコートし、前記蛍光体層が複数のサブレイヤーを含む工程と、
前記蛍光体層を硬化させる工程と、
反射層を前記蛍光体層に形成する工程と、
前記反射層の形成後、前記テープを再固定する工程と、
前記反射層の形成後、前記基板を除去し、前記基板を除去し、前記基板を再利用可能にする工程と、
代替テープを前記複数のLEDに取り付ける工程、および、
前記基板除去後、ダイシングプロセスを前記複数のLEDに行う工程、
を含むことを特徴とする発光ダイオード(LED)の製造方法。 - 前記蛍光体層の前記サブレイヤーのひとつは、蛍光体粒子と混合されるゲルを含み、もうひとつの前記サブレイヤーは、拡散粒子と混合されるゲルを含むことを特徴とする請求項9に記載の方法。
- 前記蛍光体層の前記サブレイヤーのひとつは、ゲルと混合される黄色蛍光体粒子を含み、前記サブレイヤーのもうひとつは、ゲルと混合される赤色蛍光体粒子を含むことを特徴とする請求項9に記載の方法。
- 前記反射層が、銀またはアルミニウムを含むことを特徴とする請求項9に記載の方法。
- 前記蛍光体層をモールディングする工程をさらに含み、前記蛍光体層は、前記LEDのそれぞれの上に設けられる複数の所定のセグメントを有することを特徴とする請求項9に記載の方法。
- 前記所定のセグメントは、凹V字型、凹U字型および凹W字型のどれかであることを特徴とする請求項13に記載の方法。
- 前記所定のセグメントは、凸面ドーム状形状を有することを特徴とする請求項13に記載の方法。
- 前記準備工程は、複数のビンに関連するLEDの群から、複数のLEDを選択する工程を含み、選択された前記複数のLEDが、すべて、前記複数のビンのサブセットに属することを特徴とする請求項9に記載の方法。
- 照明装置であって、白色発光ダイを含み、
前記白色発光ダイは、
第一導電型半導体層と、
前記第一導電型半導体層上に設けられる発光層と、
前記発光層上に設けられる第二型半導体層と、
前記第一導電型半導体層から離れる前記第二導電型半導体層表面上の二個の導電端子、および、
前記第一導電型半導体層、前記発光層、前記第二導電型半導体層および前記二個の導電端子が被覆され、第一サブレイヤーおよび前記第一サブレイヤー上に設けられる第二サブレイヤーを含む蛍光体薄膜、
を含むことを特徴とする照明装置。 - 前記第一サブレイヤーは、蛍光体粒子と混合されるゲルを含み、前記第二サブレイヤーは、拡散粒子と混合されるゲルを含むことを特徴とする請求項17に記載の照明装置。
- 前記第一サブレイヤーは、ゲルと混合される黄色蛍光体粒子を含み、前記第二サブレイヤーは、ゲルと混合される赤色蛍光体粒子を含むことを特徴とする請求項17に記載の照明装置。
- 前記蛍光体薄膜は、凸面のドーム状の形状を有することを特徴とする請求項17に記載の照明装置。
- 前記蛍光体薄膜の形状は、凹V字型、凹U字型または凹W字型のどれかであることを特徴とする請求項17に記載の照明装置。
- さらに、前記蛍光体薄膜上に設けられる反射層を含むことを特徴とする請求項21に記載の照明装置。
- 前記蛍光体薄膜の屈折率は、1.4から2.0であることを特徴とする請求項17に記載の照明装置。
- さらに、前記複数の白色発光ダイが位置するサポート素子を含むことを特徴とする請求項17に記載の照明装置。
- さらに、サポート素子および前記複数の白色発光ダイが位置するハウジングを含むことを特徴とする請求項24に記載の照明装置。
- 前記ハウジングは、電球、ライトチューブ、パーライトおよびダウンライトのひとつに設けられることを特徴とする請求項25に記載の照明装置。
- 前記複数の白色発光ダイが行で配列されることを特徴とする請求項24に記載の照明装置。
- 前記複数の白色発光ダイはマトリクスで配列されることを特徴とする請求項24に記載の照明装置。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/594,219 | 2012-08-24 | ||
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US8889439B2 (en) | 2014-11-18 |
US20140054619A1 (en) | 2014-02-27 |
KR20140026276A (ko) | 2014-03-05 |
US9082942B2 (en) | 2015-07-14 |
JP2014045194A (ja) | 2014-03-13 |
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US20140103372A1 (en) | 2014-04-17 |
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