JP2015154001A - 半導体モジュール - Google Patents
半導体モジュール Download PDFInfo
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- JP2015154001A JP2015154001A JP2014028704A JP2014028704A JP2015154001A JP 2015154001 A JP2015154001 A JP 2015154001A JP 2014028704 A JP2014028704 A JP 2014028704A JP 2014028704 A JP2014028704 A JP 2014028704A JP 2015154001 A JP2015154001 A JP 2015154001A
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- upper arm
- switching element
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- 230000007547 defect Effects 0.000 claims description 24
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- 229920005989 resin Polymers 0.000 claims description 2
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- 238000010992 reflux Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 210000000746 body region Anatomy 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- -1 helium ions Chemical class 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
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Abstract
【解決手段】半導体モジュール2は、高電位配線300と、出力配線400と、低電位配線500と、上アームスイッチング素子110と、上アームダイオード120と、下アームスイッチング素子210と、下アームダイオード220とを備えている。上アームスイッチング素子110の定常損失/スイッチング損失比率が、下アームスイッチング素子210の定常損失/スイッチング損失比率よりも小さくなるように形成されている。さらに、上アームダイオード120の定常損失/スイッチング損失比率が、下アームダイオード220の定常損失/スイッチング損失比率よりも小さくなるように形成されている。
【選択図】図1
Description
図1に示すように、本実施例の半導体モジュール2は、高電位配線300と、出力配線400と、低電位配線500と、上アーム半導体装置100と、下アーム半導体装置200と、バッテリ600と、インバータ回路700を備えている。本実施例の半導体モジュール2は、ハイブリッド車や電気自動車に搭載されている。上アーム半導体装置100は、高電位配線300と出力配線400の間に接続されている。下アーム半導体装置200は、出力配線400と低電位配線500の間に接続されている。インバータ回路700は、自動車のモータを駆動するための回路である。半導体モジュール2は、バッテリ600の出力電圧を昇圧して、インバータ回路700に供給する。
実施例2では、上アームスイッチング素子110と下アームスイッチング素子210とで、コレクタ領域80のp型不純物濃度が略同一である。ただし、実施例2では、上アームダイオード120内の結晶欠陥領域44における結晶欠陥量が、下アームダイオード220内の結晶欠陥領域44における結晶欠陥量よりも少ない。例えば、上アームダイオード120内の結晶欠陥領域44が形成される際には、下アームダイオード220内の結晶欠陥領域44が形成される際よりも多くのヘリウムイオンが打ち込まれている。その他の構成は、実施例2は実施例1と等しい。
実施例3では、上アームスイッチング素子110のコレクタ領域80のp型不純物濃度が、下アームスイッチング素子210のコレクタ領域80のp型不純物濃度と略同一である。また、上アームダイオード120の結晶欠陥領域44における結晶欠陥量が、下アームダイオード220の結晶欠陥領域44における結晶欠陥量と略同一である。ただし、実施例3では、図5に示すように、上アームダイオード120の素子面積の上アームスイッチング素子110の素子面積に対する比率が、下アームダイオード220の素子面積の下アームスイッチング素子210の素子面積に対する比率よりも大きい。図5に示すように、上アーム半導体装置100では、上アームスイッチング素子110の周囲に上アームダイオード120が形成されている。下アーム半導体装置200では、下アームダイオード220の周囲に下アームスイッチング素子210が形成されている。その他の構成は、実施例3は実施例1と等しい。なお、実施例3でも、上アームスイッチング素子110と上アームダイオード120との合計素子面積は、下アームスイッチング素子210と下アームダイオード220との合計素子面積と等しい。
10:半導体基板
15:還流回路
16:電圧供給回路
17:還流回路
18:充電回路
20:エミッタ領域
30:ボディ領域
32:ゲートトレンチ
34:ゲート絶縁膜
36:トレンチゲート電極
38:絶縁層
40:ドリフト領域
44:結晶欠陥領域
50:アノード領域
60:表面電極
70:バッファ領域
80:コレクタ領域
85:カソード領域
90:裏面電極
100:上アーム半導体装置
110:上アームスイッチング素子
120:上アームダイオード
200:下アーム半導体装置
210:下アームスイッチング素子
220:下アームダイオード
300:高電位配線
400:出力配線
500:低電位配線
600:バッテリ
610:リアクタンス
620:フィルタコンデンサ
700:インバータ回路
710:メインコンデンサ
Claims (8)
- 第1の配線と、
第2の配線と、
第3の配線と、
前記第1の配線と前記第2の配線の間に接続されている上アームスイッチング素子と、
前記第2の配線と前記第3の配線の間に接続されている下アームスイッチング素子と、
前記第1の配線がカソード側に接続されるように、前記第1の配線と前記第2の配線の間に接続されている上アームダイオードと、
前記第2の配線がカソード側に接続されるように、前記第2の配線と前記第3の配線の間に接続されている下アームダイオードと、
を有しており、
(a)前記上アームダイオードの定常損失/スイッチング損失比率が、前記下アームダイオードの定常損失/スイッチング損失比率よりも小さいことと、
(b)前記上アームスイッチング素子の定常損失/スイッチング損失比率が、前記下アームスイッチング素子の定常損失/スイッチング損失比率よりも小さいこと、
のうちの少なくとも一方が満たされている、
半導体モジュール。 - 前記上アームダイオードの結晶欠陥が、前記下アームダイオードの結晶欠陥よりも少ない、
請求項1の半導体モジュール。 - 前記上アームスイッチング素子及び前記下アームスイッチング素子がIGBTであり、
前記上アームスイッチング素子のコレクタ領域のp型不純物濃度が、下アームスイッチング素子のコレクタ領域のp型不純物濃度よりも高い、
請求項1又は2の半導体モジュール。 - 第1の配線と、
第2の配線と、
第3の配線と、
前記第1の配線と前記第2の配線の間に接続されている上アームスイッチング素子と、
前記第2の配線と前記第3の配線の間に接続されている下アームスイッチング素子と、
前記第1の配線がカソード側に接続されるように、前記第1の配線と前記第2の配線の間に接続されている上アームダイオードと、
前記第2の配線がカソード側に接続されるように、前記第2の配線と前記第3の配線の間に接続されている下アームダイオードと、
を有しており、
前記上アームダイオードの素子面積の前記上アームスイッチング素子の素子面積に対する比率が、前記下アームダイオードの素子面積の前記下アームスイッチング素子の素子面積に対する比率よりも大きい、
半導体モジュール。 - 前記上アームスイッチング素子と前記上アームダイオードとの合計素子面積が、前記下アームスイッチング素子と前記下アームダイオードとの合計素子面積と等しい、
請求項1から4のいずれか一項の半導体モジュール。 - 前記上アームスイッチング素子と前記上アームダイオードとが第1の半導体基板内に形成されており、
前記下アームスイッチング素子と前記下アームダイオードとが第2の半導体基板内に形成されている、
請求項1から5のいずれか一項の半導体モジュール。 - 前記第1の半導体基板の基板面積が、前記第2の半導体基板の基板面積と等しい、
請求項6の半導体モジュール。 - 前記上アームスイッチング素子と、前記上アームダイオードと、前記下アームスイッチング素子と、前記下アームダイオードが、一体に樹脂モールドされている、
請求項1から7の半導体モジュール。
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