JP2015153811A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- JP2015153811A JP2015153811A JP2014024242A JP2014024242A JP2015153811A JP 2015153811 A JP2015153811 A JP 2015153811A JP 2014024242 A JP2014024242 A JP 2014024242A JP 2014024242 A JP2014024242 A JP 2014024242A JP 2015153811 A JP2015153811 A JP 2015153811A
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Abstract
Description
図6〜図18は実施形態の半導体装置の製造方法を示す図、図19及び図20は実施形態の半導体装置を示す図である。以下、半導体装置の製造方法を説明しながら、半導体装置の構造について説明する。
前述した実施形態では、配線基板5の上に第1半導体チップ6及び第2半導体チップ7を順にフリップチップ接続して積層している。この形態の他に、配線基板5の代わりに、半導体チップを採用し、3つの半導体チップを積層して同様な構成としてもよい。
Claims (8)
- 配線基板と、
前記配線基板の上にフリップチップ接続された第1半導体チップと、
前記配線基板と前記第1半導体チップの間に充填され、かつ前記第1半導体チップの周囲に配置された台座部を備えた第1アンダーフィル樹脂と、
前記第1半導体チップの上にフリップチップ接続され、前記第1半導体チップより面積が大きな第2半導体チップと、
前記第1半導体チップと前記第2半導体チップの間に充填され、かつ前記第1アンダーフィル樹脂の台座部の上面及び前記第2半導体チップの側面を被覆する第2アンダーフィル樹脂と
を有することを特徴とする半導体装置。 - 前記第2半導体チップの側面は、前記第1半導体チップの側面と前記第1アンダーフィル樹脂の台座部の側面との間の領域に配置されていることを特徴とする請求項1に記載の半導体装置。
- 前記第1半導体チップの上面と前記1のアンダーフィル樹脂の台座部の上面とは、同一面となっていることを特徴とする請求項1又は2に記載の半導体装置。
- 配線基板の上に第1封止樹脂材を形成する工程と、
前記第1封止樹脂材に第1半導体チップの電極を押し込んで前記配線基板にフリップチップ接続し、前記配線基板と前記第1半導体チップとの間に第1アンダーフィル樹脂を充填すると共に、前記第1半導体チップの周囲に前記第1アンダーフィル樹脂により台座部を形成する工程と、
前記第1半導体チップの上に第2封止樹脂材を形成する工程と、
前記第2封止樹脂材に第2半導体チップの電極を押し込んで前記第1半導体チップにフリップチップ接続し、前記第1半導体チップと前記第2半導体チップとの間に第2アンダーフィル樹脂を充填すると共に、前記第1アンダーフィル樹脂の台座部の上面及び第2半導体チップの側面を前記第2アンダーフィル樹脂で被覆する工程と
有することを特徴とする半導体装置の製造方法。 - 配線基板の上に封止樹脂材を形成する工程と、
前記封止樹脂材に第1半導体チップの電極を押し込んで前記配線基板にフリップチップ接続し、前記配線基板と前記第1半導体チップとの間に第1アンダーフィル樹脂を充填すると共に、前記第1半導体チップの周囲に前記第1アンダーフィル樹脂により台座部を形成する工程と、
前記第1半導体チップの上に第2半導体チップをフリップチップ接続する工程と、
前記第1半導体チップと前記第2半導体チップとの間に第2アンダーフィル樹脂を充填すると共に、前記第1アンダーフィル樹脂の台座部の上面及び第2半導体チップの側面を前記第2アンダーフィル樹脂で被覆する工程と
有することを特徴とする半導体装置の製造方法。 - 前記第1アンダーフィル樹脂を充填する工程において、
前記第1半導体チップは、前記第1半導体チップよりも面積が大きなボンディングツールに固定された状態で前記第1封止樹脂材に押し込まれ、
前記ボンディングツールの周縁部の下面で前記第1封止樹脂材の周縁部が押圧されて前記台座部が形成され、前記台座部の上面と前記第1半導体チップの上面とが同一面となることを特徴とする請求項4又は5に記載の半導体装置の製造方法。 - 前記第2アンダーフィル樹脂は、前記第1アンダーフィル樹脂よりも溶融粘度が低い樹脂材から形成されることを特徴とする請求項4に記載の半導体装置の製造方法。
- 前記第1半導体チップの上に前記第2半導体チップをフリップチップ接続する工程において、前記第2半導体チップの側面は、前記第1半導体チップの側面と前記第1アンダーフィル樹脂の台座部の側面との間の領域に配置されることを特徴とする請求項4乃至7のいずれか一項に記載の半導体装置の製造方法。
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