JP2015135908A - 半導体発光装置 - Google Patents
半導体発光装置 Download PDFInfo
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- JP2015135908A JP2015135908A JP2014007001A JP2014007001A JP2015135908A JP 2015135908 A JP2015135908 A JP 2015135908A JP 2014007001 A JP2014007001 A JP 2014007001A JP 2014007001 A JP2014007001 A JP 2014007001A JP 2015135908 A JP2015135908 A JP 2015135908A
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- H—ELECTRICITY
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- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
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- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/40—Details of LED load circuits
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
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Abstract
Description
11 搭載基板
12 光吸収体
13 n側パッド電極
14 p側パッド電極群
15 配線群
15A、15B、15C、15D、15E、15F 配線
20、20A、20B、20C、20D、20E、20F 半導体発光素子
21 半導体構造層
22 第1の半導体層
23 発光層
24 第2の半導体層
21S 側面
CP 凹部
Claims (5)
- 搭載基板と、
前記搭載基板上に並置され、その各々が第1の導電型を有する第1の半導体層、発光層及び第2の導電型を有する第2の半導体層が前記搭載基板上に順次積層された構造を有する半導体構造層と、前記第1の半導体層上に形成された第1の電極と、前記第1の半導体層上において前記第1の半導体層及び前記発光層を貫通して前記第2の半導体層に接続された第2の電極と、を有する複数の半導体発光素子と、
前記複数の半導体発光素子の隣接する前記半導体発光素子との間における前記搭載基板上の領域の全体を覆うように形成された光吸収体と、
前記搭載基板と前記半導体発光素子の各々との間において前記第1の電極の各々に配線された複数の配線からなる配線群と、を有し、
前記光吸収体は導電性を有し、前記搭載基板と前記半導体発光素子の各々との間において前記第2の電極の各々に電気的に接続されており、
前記光吸収体及び前記配線群は、前記搭載基板と前記半導体発光素子の各々との間において、絶縁層を介して立体的に重なるように形成されていることを特徴とする半導体発光装置。 - 前記光吸収体は、前記搭載基板と前記半導体発光素子との間において層状に設けられ、
前記複数の配線の各々は前記搭載基板と前記光吸収体との間に設けられ、前記複数の配線の各々は、前記光吸収体を貫通して前記第1の電極の各々に接続されていることを特徴とする請求項1に記載の半導体発光装置。 - 前記搭載基板上には前記半導体発光素子の各々への給電端子が設けられ、
前記光吸収体は、前記半導体発光素子と前記給電端子との間における前記搭載基板上の領域の全体を覆うように形成されていることを特徴とする請求項1又は2に記載の半導体発光装置。 - 前記半導体構造層は、その隣接する前記半導体発光素子に対向する側面が、前記第1の半導体層から前記第2の半導体層に達する凹部によって段差形状を有し、
前記凹部は、その全体が光学的に露出していることを特徴とする請求項1乃至3のいずれか1つに記載の半導体発光装置。 - 前記半導体構造層の前記側面は、隣接する前記半導体発光素子の前記半導体構造層間の間隔が前記搭載基板に向かって拡大するように傾斜していることを特徴とする請求項4に記載の半導体発光装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014007001A JP6219177B2 (ja) | 2014-01-17 | 2014-01-17 | 半導体発光装置 |
US14/594,807 US9209224B2 (en) | 2014-01-17 | 2015-01-12 | Semiconductor light-emitting device |
EP15151383.5A EP2897167B1 (en) | 2014-01-17 | 2015-01-16 | Semiconductor light-emitting device |
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JP2014007001A JP6219177B2 (ja) | 2014-01-17 | 2014-01-17 | 半導体発光装置 |
Publications (2)
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JP2015135908A true JP2015135908A (ja) | 2015-07-27 |
JP6219177B2 JP6219177B2 (ja) | 2017-10-25 |
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US (1) | US9209224B2 (ja) |
EP (1) | EP2897167B1 (ja) |
JP (1) | JP6219177B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20210336109A1 (en) * | 2020-04-28 | 2021-10-28 | Nichia Corporation | Light-emitting device |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2015079929A (ja) * | 2013-09-11 | 2015-04-23 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
TWI568026B (zh) * | 2014-11-04 | 2017-01-21 | 錼創科技股份有限公司 | 發光裝置 |
TWI552394B (zh) * | 2014-11-18 | 2016-10-01 | 隆達電子股份有限公司 | 發光二極體結構與發光二極體模組 |
KR102410788B1 (ko) * | 2015-06-30 | 2022-06-21 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광 소자 |
JP6822429B2 (ja) * | 2018-02-19 | 2021-01-27 | 日亜化学工業株式会社 | 発光素子 |
KR102572345B1 (ko) | 2018-11-15 | 2023-08-29 | 삼성디스플레이 주식회사 | 표시 장치 및 그 검사 방법 |
Citations (4)
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JP2013038212A (ja) * | 2011-08-08 | 2013-02-21 | Toshiba Corp | 半導体発光装置及び発光モジュール |
JP2013183219A (ja) * | 2012-02-29 | 2013-09-12 | Nikon Corp | カメラ |
WO2013154818A1 (en) * | 2012-04-09 | 2013-10-17 | Cree, Inc. | Wafer level packaging of multiple light emitting diodes (leds) on a single carrier die |
US20140014990A1 (en) * | 2012-07-12 | 2014-01-16 | Samsung Electronics Co., Ltd. | Light-emitting device packages and methods of manufacturing the same |
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JP2012114184A (ja) * | 2010-11-24 | 2012-06-14 | Hitachi Cable Ltd | 発光ダイオード |
JP2013065726A (ja) | 2011-09-16 | 2013-04-11 | Toshiba Corp | 半導体発光装置及びその製造方法 |
JP2014007001A (ja) | 2012-06-22 | 2014-01-16 | Panasonic Corp | 燃料電池システム |
JP6287317B2 (ja) * | 2013-02-28 | 2018-03-07 | 日亜化学工業株式会社 | 半導体発光素子 |
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- 2014-01-17 JP JP2014007001A patent/JP6219177B2/ja active Active
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- 2015-01-12 US US14/594,807 patent/US9209224B2/en active Active
- 2015-01-16 EP EP15151383.5A patent/EP2897167B1/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2013038212A (ja) * | 2011-08-08 | 2013-02-21 | Toshiba Corp | 半導体発光装置及び発光モジュール |
JP2013183219A (ja) * | 2012-02-29 | 2013-09-12 | Nikon Corp | カメラ |
WO2013154818A1 (en) * | 2012-04-09 | 2013-10-17 | Cree, Inc. | Wafer level packaging of multiple light emitting diodes (leds) on a single carrier die |
US20140014990A1 (en) * | 2012-07-12 | 2014-01-16 | Samsung Electronics Co., Ltd. | Light-emitting device packages and methods of manufacturing the same |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20210336109A1 (en) * | 2020-04-28 | 2021-10-28 | Nichia Corporation | Light-emitting device |
US11699779B2 (en) * | 2020-04-28 | 2023-07-11 | Nichia Corporation | Light-emitting device |
US12002917B2 (en) | 2020-04-28 | 2024-06-04 | Nichia Corporation | Light-emitting device |
Also Published As
Publication number | Publication date |
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JP6219177B2 (ja) | 2017-10-25 |
EP2897167B1 (en) | 2018-11-21 |
EP2897167A1 (en) | 2015-07-22 |
US9209224B2 (en) | 2015-12-08 |
US20150206922A1 (en) | 2015-07-23 |
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