JP3352340B2
(ja)
|
1995-10-06 |
2002-12-03 |
キヤノン株式会社 |
半導体基体とその製造方法
|
JP3364081B2
(ja)
|
1995-02-16 |
2003-01-08 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
KR19990028523A
(ko)
|
1995-08-31 |
1999-04-15 |
야마모토 히데키 |
반도체웨이퍼의 보호점착테이프의 박리방법 및 그 장치
|
US6072239A
(en)
|
1995-11-08 |
2000-06-06 |
Fujitsu Limited |
Device having resin package with projections
|
JP4619462B2
(ja)
|
1996-08-27 |
2011-01-26 |
セイコーエプソン株式会社 |
薄膜素子の転写方法
|
CN1143394C
(zh)
|
1996-08-27 |
2004-03-24 |
精工爱普生株式会社 |
剥离方法、溥膜器件的转移方法和薄膜器件
|
US6127199A
(en)
|
1996-11-12 |
2000-10-03 |
Seiko Epson Corporation |
Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device
|
KR100304161B1
(ko)
|
1996-12-18 |
2001-11-30 |
미다라이 후지오 |
반도체부재의제조방법
|
TW437078B
(en)
|
1998-02-18 |
2001-05-28 |
Canon Kk |
Composite member, its separation method, and preparation method of semiconductor substrate by utilization thereof
|
US6326279B1
(en)
|
1999-03-26 |
2001-12-04 |
Canon Kabushiki Kaisha |
Process for producing semiconductor article
|
US6452091B1
(en)
|
1999-07-14 |
2002-09-17 |
Canon Kabushiki Kaisha |
Method of producing thin-film single-crystal device, solar cell module and method of producing the same
|
US6391220B1
(en)
|
1999-08-18 |
2002-05-21 |
Fujitsu Limited, Inc. |
Methods for fabricating flexible circuit structures
|
AU776667B2
(en)
|
1999-11-29 |
2004-09-16 |
Canon Kabushiki Kaisha |
Process and apparatus for forming zinc oxide film, and process and apparatus for producing photovoltaic device
|
TW465122B
(en)
*
|
1999-12-15 |
2001-11-21 |
Semiconductor Energy Lab |
Light-emitting device
|
US7060153B2
(en)
|
2000-01-17 |
2006-06-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Display device and method of manufacturing the same
|
US6879110B2
(en)
|
2000-07-27 |
2005-04-12 |
Semiconductor Energy Laboratory Co., Ltd. |
Method of driving display device
|
JP2002108285A
(ja)
|
2000-07-27 |
2002-04-10 |
Semiconductor Energy Lab Co Ltd |
表示装置の駆動方法
|
SG143972A1
(en)
|
2000-09-14 |
2008-07-29 |
Semiconductor Energy Lab |
Semiconductor device and manufacturing method thereof
|
JP4803884B2
(ja)
|
2001-01-31 |
2011-10-26 |
キヤノン株式会社 |
薄膜半導体装置の製造方法
|
JP4302335B2
(ja)
|
2001-05-22 |
2009-07-22 |
株式会社半導体エネルギー研究所 |
太陽電池の作製方法
|
TW548860B
(en)
|
2001-06-20 |
2003-08-21 |
Semiconductor Energy Lab |
Light emitting device and method of manufacturing the same
|
JP4027740B2
(ja)
|
2001-07-16 |
2007-12-26 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
TW564471B
(en)
*
|
2001-07-16 |
2003-12-01 |
Semiconductor Energy Lab |
Semiconductor device and peeling off method and method of manufacturing semiconductor device
|
JP4524561B2
(ja)
|
2001-07-24 |
2010-08-18 |
セイコーエプソン株式会社 |
転写方法
|
JP5057619B2
(ja)
|
2001-08-01 |
2012-10-24 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
TW554398B
(en)
|
2001-08-10 |
2003-09-21 |
Semiconductor Energy Lab |
Method of peeling off and method of manufacturing semiconductor device
|
TW558743B
(en)
|
2001-08-22 |
2003-10-21 |
Semiconductor Energy Lab |
Peeling method and method of manufacturing semiconductor device
|
KR100944886B1
(ko)
|
2001-10-30 |
2010-03-03 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
반도체 장치의 제조 방법
|
TWI264121B
(en)
|
2001-11-30 |
2006-10-11 |
Semiconductor Energy Lab |
A display device, a method of manufacturing a semiconductor device, and a method of manufacturing a display device
|
US6953735B2
(en)
|
2001-12-28 |
2005-10-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for fabricating a semiconductor device by transferring a layer to a support with curvature
|
EP1363319B1
(en)
|
2002-05-17 |
2009-01-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Method of transferring an object and method of manufacturing a semiconductor device
|
JP2004047823A
(ja)
|
2002-07-12 |
2004-02-12 |
Tokyo Seimitsu Co Ltd |
ダイシングテープ貼付装置およびバックグラインド・ダイシングテープ貼付システム
|
TWI272641B
(en)
|
2002-07-16 |
2007-02-01 |
Semiconductor Energy Lab |
Method of manufacturing a semiconductor device
|
JP2004140267A
(ja)
|
2002-10-18 |
2004-05-13 |
Semiconductor Energy Lab Co Ltd |
半導体装置およびその作製方法
|
JP4471563B2
(ja)
|
2002-10-25 |
2010-06-02 |
株式会社ルネサステクノロジ |
半導体装置の製造方法
|
CN100391004C
(zh)
|
2002-10-30 |
2008-05-28 |
株式会社半导体能源研究所 |
半导体装置以及半导体装置的制作方法
|
JP4712298B2
(ja)
*
|
2002-12-13 |
2011-06-29 |
株式会社半導体エネルギー研究所 |
発光装置の作製方法
|
US7056810B2
(en)
|
2002-12-18 |
2006-06-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor apparatus, and semiconductor apparatus and electric appliance
|
JP4429917B2
(ja)
|
2002-12-26 |
2010-03-10 |
株式会社半導体エネルギー研究所 |
発光装置、表示装置及び電子機器
|
JP4373085B2
(ja)
|
2002-12-27 |
2009-11-25 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法、剥離方法及び転写方法
|
KR101033797B1
(ko)
|
2003-01-15 |
2011-05-13 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
박리 방법 및 그 박리 방법을 사용한 표시 장치의 제작 방법
|
US7436050B2
(en)
|
2003-01-22 |
2008-10-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device having a flexible printed circuit
|
JP4151421B2
(ja)
|
2003-01-23 |
2008-09-17 |
セイコーエプソン株式会社 |
デバイスの製造方法
|
TWI356658B
(en)
|
2003-01-23 |
2012-01-11 |
Toray Industries |
Members for circuit board, method and device for m
|
JP2004311955A
(ja)
|
2003-03-25 |
2004-11-04 |
Sony Corp |
超薄型電気光学表示装置の製造方法
|
JP2005101125A
(ja)
*
|
2003-09-24 |
2005-04-14 |
Seiko Epson Corp |
半導体装置の製造方法及び半導体装置、回路基板並びに電子機器
|
EP2259300B1
(en)
|
2003-10-28 |
2020-04-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacture of semiconductor device
|
WO2005045908A1
(ja)
|
2003-11-06 |
2005-05-19 |
Matsushita Electric Industrial Co., Ltd. |
基板貼り合わせ方法、その貼り合わせ基板及び直接接合基板
|
KR101095293B1
(ko)
|
2003-11-28 |
2011-12-16 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치 제조 방법
|
US7566640B2
(en)
|
2003-12-15 |
2009-07-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing thin film integrated circuit device, noncontact thin film integrated circuit device and method for manufacturing the same, and idtag and coin including the noncontact thin film integrated circuit device
|
US7271076B2
(en)
|
2003-12-19 |
2007-09-18 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of thin film integrated circuit device and manufacturing method of non-contact type thin film integrated circuit device
|
US7015075B2
(en)
|
2004-02-09 |
2006-03-21 |
Freescale Semiconuctor, Inc. |
Die encapsulation using a porous carrier
|
US7732263B2
(en)
|
2004-02-25 |
2010-06-08 |
Semiconductor Energy Laboratory Co., Ltd |
Semiconductor device
|
JP2006049800A
(ja)
|
2004-03-10 |
2006-02-16 |
Seiko Epson Corp |
薄膜デバイスの供給体、薄膜デバイスの供給体の製造方法、転写方法、半導体装置の製造方法及び電子機器
|
US7282380B2
(en)
|
2004-03-25 |
2007-10-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
US8405193B2
(en)
|
2004-04-02 |
2013-03-26 |
General Electric Company |
Organic electronic packages having hermetically sealed edges and methods of manufacturing such packages
|
CN100369291C
(zh)
*
|
2004-05-09 |
2008-02-13 |
友达光电股份有限公司 |
有机发光显示器及其制造方法
|
US8123896B2
(en)
|
2004-06-02 |
2012-02-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Laminating system
|
CN100540431C
(zh)
|
2004-07-02 |
2009-09-16 |
夏普股份有限公司 |
膜剥离方法和装置
|
US7591863B2
(en)
|
2004-07-16 |
2009-09-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Laminating system, IC sheet, roll of IC sheet, and method for manufacturing IC chip
|
CN100530575C
(zh)
|
2004-07-30 |
2009-08-19 |
株式会社半导体能源研究所 |
层压***、ic薄片、ic薄片卷、以及ic芯片的制造方法
|
US7927971B2
(en)
|
2004-07-30 |
2011-04-19 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
WO2006033451A1
(en)
|
2004-09-24 |
2006-03-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
JPWO2006038496A1
(ja)
|
2004-10-01 |
2008-05-15 |
東レ株式会社 |
長尺フィルム回路基板、その製造方法およびその製造装置
|
US7482248B2
(en)
|
2004-12-03 |
2009-01-27 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of semiconductor device
|
JP4649198B2
(ja)
|
2004-12-20 |
2011-03-09 |
新光電気工業株式会社 |
配線基板の製造方法
|
KR20060031590A
(ko)
*
|
2005-01-04 |
2006-04-12 |
후지 덴키 홀딩스 가부시키가이샤 |
유기 el 디스플레이와 그 제조방법
|
CN101950748B
(zh)
|
2005-01-28 |
2013-06-12 |
株式会社半导体能源研究所 |
半导体器件和制造它的方法
|
US7566633B2
(en)
|
2005-02-25 |
2009-07-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
US9040420B2
(en)
|
2005-03-01 |
2015-05-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of semiconductor device including peeling layers from substrates by etching
|
JP4795743B2
(ja)
|
2005-05-19 |
2011-10-19 |
リンテック株式会社 |
貼付装置
|
US7820526B2
(en)
|
2005-05-20 |
2010-10-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of semiconductor device
|
US7465674B2
(en)
|
2005-05-31 |
2008-12-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of semiconductor device
|
US8030132B2
(en)
|
2005-05-31 |
2011-10-04 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method of semiconductor device including peeling step
|
JP4916680B2
(ja)
|
2005-06-30 |
2012-04-18 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法、剥離方法
|
EP1760776B1
(en)
|
2005-08-31 |
2019-12-25 |
Semiconductor Energy Laboratory Co., Ltd. |
Manufacturing method for semiconductor device with flexible substrate
|
US7767543B2
(en)
|
2005-09-06 |
2010-08-03 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing a micro-electro-mechanical device with a folded substrate
|
WO2007051860A1
(de)
*
|
2005-11-07 |
2007-05-10 |
Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. |
Lacke mit sauerstoff-scavenger und/oder sauerstoff-indikatorfunktion zum beschichten oder verkleben sowie damit hergestellte produkte
|
US20070172971A1
(en)
*
|
2006-01-20 |
2007-07-26 |
Eastman Kodak Company |
Desiccant sealing arrangement for OLED devices
|
US8222116B2
(en)
|
2006-03-03 |
2012-07-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
TWI424499B
(zh)
|
2006-06-30 |
2014-01-21 |
Semiconductor Energy Lab |
製造半導體裝置的方法
|
TWI611565B
(zh)
|
2006-09-29 |
2018-01-11 |
半導體能源研究所股份有限公司 |
半導體裝置的製造方法
|
US8137417B2
(en)
|
2006-09-29 |
2012-03-20 |
Semiconductor Energy Laboratory Co., Ltd. |
Peeling apparatus and manufacturing apparatus of semiconductor device
|
US7867907B2
(en)
|
2006-10-17 |
2011-01-11 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device
|
JP4380709B2
(ja)
|
2007-01-31 |
2009-12-09 |
セイコーエプソン株式会社 |
半導体装置の製造方法
|
US8033684B2
(en)
*
|
2007-08-31 |
2011-10-11 |
The Boeing Company |
Starry sky lighting panels
|
JP2010040408A
(ja)
*
|
2008-08-07 |
2010-02-18 |
Seiko Epson Corp |
有機el装置及び電子機器
|
JP2010121144A
(ja)
*
|
2008-11-17 |
2010-06-03 |
Seiko Epson Corp |
成膜装置
|
JP5586920B2
(ja)
|
2008-11-20 |
2014-09-10 |
株式会社半導体エネルギー研究所 |
フレキシブル半導体装置の作製方法
|
JP2010140786A
(ja)
*
|
2008-12-12 |
2010-06-24 |
Seiko Epson Corp |
有機el装置
|
JP5593630B2
(ja)
*
|
2009-04-01 |
2014-09-24 |
セイコーエプソン株式会社 |
有機el装置および電子機器
|
JP2011053582A
(ja)
|
2009-09-04 |
2011-03-17 |
Seiko Epson Corp |
表示パネルの製造方法
|
KR101275792B1
(ko)
|
2010-07-28 |
2013-06-18 |
삼성디스플레이 주식회사 |
표시 장치 및 유기 발광 표시 장치
|
KR101295532B1
(ko)
*
|
2010-11-11 |
2013-08-12 |
엘지디스플레이 주식회사 |
플렉시블 평판소자의 제조방법
|
KR101521114B1
(ko)
|
2010-12-03 |
2015-05-19 |
엘지디스플레이 주식회사 |
유기전계발광 표시장치 및 그 제조 방법
|
KR20120066352A
(ko)
|
2010-12-14 |
2012-06-22 |
삼성모바일디스플레이주식회사 |
유기 발광 표시 장치 및 이의 제조 방법
|
TWI591871B
(zh)
|
2010-12-16 |
2017-07-11 |
半導體能源研究所股份有限公司 |
發光裝置及照明裝置
|
KR101839954B1
(ko)
|
2010-12-17 |
2018-03-20 |
삼성디스플레이 주식회사 |
표시 장치 및 유기 발광 표시 장치
|
KR102040242B1
(ko)
|
2011-05-12 |
2019-11-05 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
발광 장치 및 발광 장치를 이용한 전자 기기
|
KR101953724B1
(ko)
*
|
2011-08-26 |
2019-03-04 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
발광 모듈, 발광 장치, 발광 모듈의 제작 방법, 발광 장치의 제작 방법
|
WO2013031509A1
(en)
|
2011-08-26 |
2013-03-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Light-emitting device, electronic device, lighting device, and method for manufacturing the light-emitting device
|
KR20140029202A
(ko)
|
2012-08-28 |
2014-03-10 |
가부시키가이샤 한도오따이 에네루기 켄큐쇼 |
표시 장치
|
TWI642094B
(zh)
|
2013-08-06 |
2018-11-21 |
半導體能源研究所股份有限公司 |
剝離方法
|
TWI663722B
(zh)
|
2013-09-06 |
2019-06-21 |
Semiconductor Energy Laboratory Co., Ltd. |
發光裝置以及發光裝置的製造方法
|