JP2015056509A - 半導体光共振器、半導体光素子及び光通信モジュール - Google Patents
半導体光共振器、半導体光素子及び光通信モジュール Download PDFInfo
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/34—Optical coupling means utilising prism or grating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0265—Intensity modulators
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
- H01S5/106—Comprising an active region having a varying composition or cross-section in a specific direction varying thickness along the optical axis
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/124—Geodesic lenses or integrated gratings
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- H01S2301/00—Functional characteristics
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
- H01S5/1212—Chirped grating
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- H—ELECTRICITY
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1231—Grating growth or overgrowth details
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
【解決手段】共振器部4は、光軸方向で実効屈折率が異なる2以上の領域を含む導波路と、導波路の光軸方向に沿って形成される回折格子5と、を有し、導波路の実効屈折率が大きい領域に対して形成される回折格子5のピッチを、導波路の実効屈折率が小さい領域に対して形成される回折格子5のピッチよりも小さくした。
【選択図】図2
Description
Claims (9)
- 光軸方向で実効屈折率が異なる2以上の領域を含む導波路と、
前記導波路の光軸方向に沿って形成される回折格子と、を有し、
前記導波路の実効屈折率が大きい領域に対して形成される回折格子のピッチを、前記導波路の実効屈折率が小さい領域に対して形成される回折格子のピッチよりも小さくした
ことを特徴とする半導体光共振器。 - 請求項1に記載の半導体光共振器であって、
前記導波路は、光軸方向で厚みが異なる2以上の領域を含み、
前記導波路の厚みが大きい領域に対して形成される回折格子のピッチを、前記導波路の厚みが小さい領域に対して形成される回折格子のピッチよりも小さくした
ことを特徴とする半導体光共振器。 - 請求項1に記載の半導体光共振器であって、
前記導波路は、光軸方向でフォトルミネッセンス波長が異なる2以上の領域を含み、
前記導波路のフォトルミネッセンス波長が大きい領域に対して形成される回折格子のピッチを、前記導波路のフォトルミネッセンス波長が小さい領域に対して形成される回折格子のピッチよりも小さくした
ことを特徴とする半導体光共振器。 - 請求項1乃至3のいずれかに記載の半導体光共振器であって、
前記導波路に沿ってメサストライプ構造を有する
ことを特徴とする半導体光共振器。 - 請求項1乃至4のいずれかに記載の半導体光共振器であって、
前記光導波路の前後方端間の発光波長の差が±2nm以内である
ことを特徴とする半導体光共振器。 - 請求項1乃至5のいずれかに記載の半導体光共振器と、
前記半導体光共振器とButt−Joint構造で接続された光変調器と、
を有することを特徴とする半導体光素子。 - 請求項6に記載の半導体光素子であって、
前記半導体光共振器は、
前記光変調器との接続部に近い領域に対して形成される回折格子のピッチを、前記接続部に対して遠い領域に対して形成される回折格子のピッチよりも小さくした
ことを特徴とする半導体光素子。 - 請求項6に記載の半導体光素子であって、
前記半導体光共振器は、
前記光変調器との接続部から所定の範囲内の領域に対して形成される回折格子に関し、前記導波路の実効屈折率が大きい領域に対して形成される回折格子のピッチを、前記導波路の実効屈折率が小さい領域に対して形成される回折格子のピッチよりも小さくし、
前記所定の範囲外の領域に対して形成される回折格子のピッチを均一とした
ことを特徴とする半導体光素子。 - 請求項1乃至5のいずれかに記載の半導体光共振器、又は請求項6乃至8のいずれかに記載の半導体光素子を備える光通信モジュール。
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JP2013188976A JP6270387B2 (ja) | 2013-09-12 | 2013-09-12 | 半導体光共振器、半導体光素子及び光通信モジュール |
US14/480,877 US9335483B2 (en) | 2013-09-12 | 2014-09-09 | Optical semiconductor resonator, optical semiconductor device, and optical module |
US15/147,119 US9791622B2 (en) | 2013-09-12 | 2016-05-05 | Optical semiconductor resonator, optical semiconductor device, and optical module |
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