JP2015034977A - 半導体装置、駆動回路及び表示装置 - Google Patents
半導体装置、駆動回路及び表示装置 Download PDFInfo
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- JP2015034977A JP2015034977A JP2014137671A JP2014137671A JP2015034977A JP 2015034977 A JP2015034977 A JP 2015034977A JP 2014137671 A JP2014137671 A JP 2014137671A JP 2014137671 A JP2014137671 A JP 2014137671A JP 2015034977 A JP2015034977 A JP 2015034977A
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Abstract
【解決手段】表示装置のゲートドライバにおいて、シフトレジスタユニットと、デマルチプレクサ回路と、n本の信号線と、を有する。シフトレジスタユニット1段につき、n本のクロック信号を伝達する信号線を接続することで(n−3)つの出力信号を出力することができ、nが大きくなるほど出力に寄与しないクロック信号を伝達する信号線の割合が小さくなるため、シフトレジスタユニット1段につき、1つの出力信号を出力する従来の構成に比べ、シフトレジスタユニット部分の占有面積は小さくなり、ゲートドライバ回路の狭額縁化を達成することが可能となる。
【選択図】図9
Description
本実施の形態では、本発明の一態様である半導体装置の構成及びその作製方法について図面を参照して説明する。
実施の形態1においてゲート電極の変形例について、図5を用いて説明する。
本実施の形態では、上記の実施の形態と異なる半導体装置の構成について図面を参照して説明する。
本実施の形態では、上記実施の形態に示す表示装置の駆動回路部について説明する。
本発明の一態様である半導体装置は、被検知体の近接または接触を検知可能なセンサ(たとえば、静電容量方式、抵抗膜方式、表面弾性方式、赤外線方式、光学方式などのタッチセンサ)や医療用の放射線画像を取得することが可能な放射線画像検出装置に適用することができる。また、本発明の一態様である半導体装置はさまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラ、デジタルビデオカメラ、デジタルフォトフレーム、携帯電話機、携帯型ゲーム機、携帯情報端末、音響再生装置、遊技機(パチンコ機、スロットマシン等)、ゲーム筐体が挙げられる。これらの電子機器の一例を図7に示す。
104 ゲートドライバ
106 ソースドライバ
107 走査線
109 信号線
115 容量線
131 トランジスタ
132 液晶素子
133 容量素子
200 基板
201 絶縁膜
202 絶縁膜
206 導電層
207 液晶層
208 導電層
209 液晶素子
211 トランジスタ
212 半導体層
215 不純物領域
216 不純物領域
217 不純物領域
218 導電層
220 画素部
221 トランジスタ
222 半導体層
225 不純物領域
226 不純物領域
227 不純物領域
228 導電層
230 駆動回路部
231 絶縁膜
232a 導電層
232b 導電層
233a 導電層
233b 導電層
234 レジストマスク
235 レジストマスク
236 絶縁膜
238 絶縁膜
242 基板
244 遮光膜
246 有色膜
248 絶縁膜
251 配向膜
252 配向膜
261 導電層
266 不純物領域
267 不純物領域
272 導電層
273 導電層
276 不純物領域
277 不純物領域
292 導電膜
293 導電膜
301 画素
600 ゲートドライバ回路
601 シフトレジスタユニット
601a シフトレジスタユニット
602 シフトレジスタユニット
602a シフトレジスタユニット
603 デマルチプレクサ回路
604 デマルチプレクサ回路
605 バッファ
605a バッファ
611 トランジスタ
612 トランジスタ
613 トランジスタ
614 トランジスタ
615 トランジスタ
616 トランジスタ
617 トランジスタ
618 トランジスタ
619 容量素子
621 トランジスタ
622 トランジスタ
623 トランジスタ
624 容量素子
625 トランジスタ
800 基板
806 導電層
807 液晶層
808 導電層
811 トランジスタ
812 半導体層
816 チャネル領域
817 不純物領域
818 導電層
821 トランジスタ
822 半導体層
826 チャネル領域
827 不純物領域
828 導電層
831 絶縁膜
832 導電層
837 絶縁膜
838 絶縁膜
842 基板
844 遮光膜
846 有色膜
848 絶縁膜
851 配向膜
852 配向膜
9000 テーブル
9001 筐体
9002 脚部
9003 表示部
9004 表示ボタン
9005 電源コード
9033 具
9034 スイッチ
9035 電源スイッチ
9036 スイッチ
9038 操作スイッチ
9100 テレビジョン装置
9101 筐体
9103 表示部
9105 スタンド
9107 表示部
9109 操作キー
9110 リモコン操作機
9200 コンピュータ
9201 本体
9202 筐体
9203 表示部
9204 キーボード
9205 外部接続ポート
9206 ポインティングデバイス
9630 筐体
9631 表示部
9631a 表示部
9631b 表示部
9632a 領域
9632b 領域
9633 太陽電池
9634 充放電制御回路
9635 バッテリー
9636 DCDCコンバータ
9637 コンバータ
9638 操作キー
9639 ボタン
Claims (5)
- シフトレジスタユニットと、
前記シフトレジスタユニットと電気的に接続するデマルチプレクサ回路と、
n本(nは4以上の自然数)の信号線と、を有し、
前記シフトレジスタユニットと、前記デマルチプレクサ回路とは、シリコンを用いた半導体素子を有し、
前記シフトレジスタユニットは、前記n本の信号線のうち1本以上n本以下と電気的に接続され、
前記デマルチプレクサ回路は、前記n本の信号線のうち1本以上(n−3)本以下と電気的に接続されることを特徴とする駆動回路。 - m個(mは、3以上の自然数)のシフトレジスタユニットと、
前記m個のシフトレジスタユニットのそれぞれと電気的に接続するm個のデマルチプレクサ回路と、
n本(nは4以上の自然数)の信号線と、を有し、
前記m個のシフトレジスタユニットと前記m個のデマルチプレクサ回路のいずれかはシリコンを用いた半導体素子を有し、
前記m個のシフトレジスタユニットのそれぞれは、前記n本の信号線のうち1本以上と電気的に接続され、
前記m個のデマルチプレクサ回路のそれぞれは、前記n本の信号線のうち1本以上(n−3)本以下と電気的に接続され、
k段目{kは2以上、(m−1)以下の自然数}のシフトレジスタユニットは、(k−1)段目のデマルチプレクサ回路の出力のいずれか一が入力され、
前記k段目のシフトレジスタユニットは、(k+1)段目のデマルチプレクサ回路の出力のいずれか一が入力されることを特徴とする駆動回路。 - 請求項1又は請求項2において、前記シリコンは結晶性シリコンであることを特徴とする駆動回路。
- シフトレジスタユニットと、
デマルチプレクサ回路と、
n本(nは4以上の自然数)の信号線と、を有し、
前記シフトレジスタユニットは、
セット信号線と、第1のトランジスタ乃至第6のトランジスタと、を有し、
前記第1のトランジスタは、ソース及びドレインの一方が高電源電位線と電気的に接続され、ソース及びドレインの他方が、前記第2のトランジスタのソース及びドレインの一方及び前記デマルチプレクサ回路と電気的に接続され、ゲートが前記セット信号線と電気的に接続され、
前記第2のトランジスタは、ソース及びドレインの他方が低電源電位線と電気的に接続され、ゲートが前記デマルチプレクサ回路、前記第4のトランジスタのソース及びドレインの一方、前記第5のトランジスタのソース及びドレインの一方及び前記第6のトランジスタのソース及びドレインの一方と電気的に接続され、
前記第3のトランジスタは、ソース及びドレインの一方が高電源電位線と電気的に接続され、ソース及びドレインの他方が第4のトランジスタのソース及びドレインの他方と電気的に接続され、ゲートが前記n本の信号線の一と電気的に接続され、
前記第4のトランジスタは、ゲートが前記n本の信号線の他の一と電気的に接続され、
前記第5のトランジスタは、ソース及びドレインの他方が低電源電位線と電気的に接続され、ゲートが前記セット信号線と電気的に接続され、
前記第6のトランジスタは、ソース及びドレインの他方が高電源電位線に電気的に接続され、ゲートがリセット信号線と電気的に接続され、
前記第1乃至第6のトランジスタのいずれかは、チャネル形成領域にシリコンを有し、
前記デマルチプレクサ回路は、a個(aは1以上(n−3)以下の自然数)のバッファを有し、
前記a個のバッファのそれぞれは、前記第1のトランジスタソース及びドレインの他方及び前記第2のトランジスタのゲートと電気的に接続され、
前記a個のバッファのそれぞれは、それぞれ異なる前記n本の信号線の一と電気的に接続され、
前記a個のバッファのそれぞれは、出力端子を有することを特徴とする駆動回路。 - 請求項4において、前記第1乃至第6のトランジスタのいずれかは、チャネル形成領域に結晶性シリコンを有することを特徴とする駆動回路。
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US10629149B2 (en) | 2020-04-21 |
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CN104282687A (zh) | 2015-01-14 |
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KR20150007217A (ko) | 2015-01-20 |
US11869453B2 (en) | 2024-01-09 |
CN104282687B (zh) | 2019-03-08 |
TWI666623B (zh) | 2019-07-21 |
JP2020129135A (ja) | 2020-08-27 |
US20200312261A1 (en) | 2020-10-01 |
JP6586215B2 (ja) | 2019-10-02 |
KR20230050287A (ko) | 2023-04-14 |
JP2019070805A (ja) | 2019-05-09 |
JP2021185423A (ja) | 2021-12-09 |
US20220215810A1 (en) | 2022-07-07 |
TW201506879A (zh) | 2015-02-16 |
US20150015474A1 (en) | 2015-01-15 |
US20170148402A1 (en) | 2017-05-25 |
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