JP2015032787A - 炭化珪素半導体基板およびその製造方法、ならびに炭化珪素半導体装置の製造方法 - Google Patents
炭化珪素半導体基板およびその製造方法、ならびに炭化珪素半導体装置の製造方法 Download PDFInfo
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- JP2015032787A JP2015032787A JP2013163406A JP2013163406A JP2015032787A JP 2015032787 A JP2015032787 A JP 2015032787A JP 2013163406 A JP2013163406 A JP 2013163406A JP 2013163406 A JP2013163406 A JP 2013163406A JP 2015032787 A JP2015032787 A JP 2015032787A
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- silicon carbide
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- 239000000758 substrate Substances 0.000 title claims abstract description 277
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 238
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 227
- 239000004065 semiconductor Substances 0.000 title claims abstract description 224
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 72
- 238000000034 method Methods 0.000 title claims abstract description 57
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 12
- 239000012535 impurity Substances 0.000 claims description 41
- 230000003746 surface roughness Effects 0.000 claims description 12
- 238000005498 polishing Methods 0.000 claims description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 7
- 238000001020 plasma etching Methods 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 claims description 5
- 229910052736 halogen Inorganic materials 0.000 claims description 4
- 150000002367 halogens Chemical class 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 2
- 210000000746 body region Anatomy 0.000 description 16
- 238000005468 ion implantation Methods 0.000 description 15
- 238000002513 implantation Methods 0.000 description 14
- 230000008569 process Effects 0.000 description 8
- 230000005856 abnormality Effects 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000001179 sorption measurement Methods 0.000 description 6
- 238000005336 cracking Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
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- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/02373—Group 14 semiconducting materials
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- H01L21/02612—Formation types
- H01L21/02617—Deposition types
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- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
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- H01L21/0475—Changing the shape of the semiconductor body, e.g. forming recesses
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- H01L21/26—Bombardment with radiation
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Abstract
Description
以下、図面を参照して、本発明の実施の形態について説明する。なお、以下の図面において、同一または相当する部分には同一の参照番号を付し、その説明は繰り返さない。また、本明細書中の結晶学的記載においては、個別方位を[]、集合方位を<>、個別面を()、集合面を{}でそれぞれ示している。また結晶学上の指数が負であることは、通常、”−”(バー)を数字の上に付すことによって表現されるが、本明細書中では数字の前に負の符号を付している。
(1)図1を参照して、本実施の形態に係る炭化珪素半導体基板10は、外径が100mm以上である主面2Aを有し、単結晶炭化珪素からなるベース基板1と、主面2A上に形成されたエピタキシャル層2とを備え、基板温度が室温であるときの反り量は−100μm以上100μm以下であり、基板温度が400℃であるときの反り量は−1.5mm以上1.5mm以下である。ここで、図2および図3を参照して、炭化珪素半導体基板10の「反り量」とは、炭化珪素半導体基板10を平面S1に載置したときの、炭化珪素半導体基板10の主面2Aにおいて平面S1に対して最も高い位置と最も低い位置との間の高さの差である。ここで、反り量の正負は、図2を参照して、炭化珪素半導体基板10の主面2Aが下に凸の場合(炭化珪素半導体基板10の中心位置が外周位置よりも平面S1に対して低く位置する場合)をマイナスとし、図3を参照して、上方に凸の場合(炭化珪素半導体基板10の中心位置が外周位置よりも平面S1に対して高く位置する場合)をプラスとする。また、「基板温度」とは、炭化珪素半導体基板10の主面2A側から放射温度計により測定される温度であり、たとえばイオン注入装置などの半導体製造装置において測定される。なお、本実施の形態に係る炭化珪素半導体基板10は、外径が100mm以上の大口径基板であって、好ましくは外径が125mm以上であり、より好ましくは外径が150mm以上である。
次に、本発明の実施の形態の詳細について説明する。
図1を参照して、実施の形態1に係る炭化珪素半導体基板10について説明する。本実施の形態に係る炭化珪素半導体基板10は、ベース基板1と、ベース基板1の主面1A上に形成されたエピタキシャル層2とを備える。
Claims (9)
- 外径が100mm以上である主面を有し、単結晶炭化珪素からなるベース基板と、
前記主面上に形成されたエピタキシャル層とを備え、
基板温度が室温であるときの反り量は−100μm以上100μm以下であり、基板温度が400℃であるときの反り量は−1.5mm以上1.5mm以下である、炭化珪素半導体基板。 - 前記主面に垂直な方向における前記ベース基板の厚みが、200μm以上700μm以下である、請求項1に記載の炭化珪素半導体基板。
- 前記ベース基板において、前記主面の反対側に位置する裏面の表面粗度は10nm以下である、請求項1または請求項2に記載の炭化珪素半導体基板。
- 外径が100mm以上である主面を有し、単結晶炭化珪素からなるベース基板を準備する工程と、
前記主面上にエピタキシャル層を形成する工程と、
前記ベース基板において前記主面の反対側に位置する裏面の少なくとも一部を除去する工程とを備える、炭化珪素半導体基板の製造方法。 - 前記除去する工程は、前記裏面を化学機械研磨することにより行う、請求項4に記載の炭化珪素半導体基板の製造方法。
- 前記除去する工程は、前記裏面を反応性イオンエッチングすることにより行う、請求項4に記載の炭化珪素半導体基板の製造方法。
- 前記除去する工程は、前記裏面をハロゲンガス雰囲気下において熱エッチングすることにより行う、請求項4に記載の炭化珪素半導体基板の製造方法。
- 前記除去する工程は、前記裏面に熱酸化膜を形成した後、前記熱酸化膜をフッ化水素酸を用いてエッチングすることにより行う、請求項4に記載の炭化珪素半導体基板の製造方法。
- 外径が100mm以上である主面を有し、単結晶炭化珪素からなるベース基板を準備する工程と、
前記主面上にエピタキシャル層を形成する工程と、
前記ベース基板において前記主面の反対側に位置する裏面の少なくとも一部を除去して、炭化珪素半導体基板を準備する工程と、
前記炭化珪素半導体基板に不純物イオンを注入する工程とを備える、炭化珪素半導体装置の製造方法。
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