JP6136732B2 - 炭化珪素半導体基板およびその製造方法、ならびに炭化珪素半導体装置の製造方法 - Google Patents
炭化珪素半導体基板およびその製造方法、ならびに炭化珪素半導体装置の製造方法 Download PDFInfo
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 253
- 239000000758 substrate Substances 0.000 title claims description 245
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 228
- 239000004065 semiconductor Substances 0.000 title claims description 219
- 238000004519 manufacturing process Methods 0.000 title claims description 63
- 238000000034 method Methods 0.000 claims description 51
- 239000012535 impurity Substances 0.000 claims description 45
- 230000001629 suppression Effects 0.000 claims description 40
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 22
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 19
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 16
- 239000010936 titanium Substances 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052799 carbon Inorganic materials 0.000 claims description 9
- 239000010931 gold Substances 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 claims description 7
- 229910052697 platinum Inorganic materials 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 89
- 210000000746 body region Anatomy 0.000 description 17
- 238000002513 implantation Methods 0.000 description 15
- 238000005468 ion implantation Methods 0.000 description 15
- 230000005856 abnormality Effects 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 238000001179 sorption measurement Methods 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 238000005336 cracking Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Description
はじめに、本発明の実施の形態の概要を列挙する。
次に、本発明の実施の形態の詳細について説明する。
図1を参照して、実施の形態1に係る炭化珪素半導体基板10について説明する。本実施の形態に係る炭化珪素半導体基板10は、ベース基板1と、ベース基板1の主面1A上に形成されたエピタキシャル層2と、ベース基板1の裏面1B上に形成された変形抑制層8とを備える。
Claims (9)
- 外径が100mm以上である主面を有し、単結晶炭化珪素からなるベース基板と、
前記主面上に形成されたエピタキシャル層と、
前記ベース基板において前記主面の反対側に位置する裏面上に形成された変形抑制層とを備え、
基板温度が室温であるときの反り量は−100μm以上100μm以下であり、基板温度が400℃であるときの反り量は−1.5mm以上1.5mm以下である、炭化珪素半導体基板。 - 前記変形抑制層の熱膨張係数は、単結晶炭化珪素の熱膨張係数の90%以下または110%以上である、請求項1に記載の炭化珪素半導体基板。
- 前記変形抑制層の厚さは5μm以下である、請求項1又は請求項2に記載の炭化珪素半導体基板。
- 前記変形抑制層を構成する材料は、酸化珪素、炭素、アルミニウム、チタン、ニッケル、白金、および金からなる群から選択される少なくとも1つである、請求項1〜請求項3のいずれか1項に記載の炭化珪素半導体基板。
- 外径が100mm以上である主面を有し、単結晶炭化珪素からなるベース基板を準備する工程と、
前記主面上にエピタキシャル層を形成する工程と、
前記ベース基板において前記主面の反対側に位置する裏面上に変形抑制層を形成する工程とを備え、
前記変形抑制層を形成する工程は、前記エピタキシャル層に不純物イオンが注入される前に行われる、炭化珪素半導体基板の製造方法。 - 前記変形抑制層を形成する工程において、前記エピタキシャル層を形成する工程後に前記ベース基板の前記主面が凹状に反るときには、単結晶炭化珪素の熱膨張係数と比べて小さい熱膨張係数を有する前記変形抑制層を形成し、前記エピタキシャル層を形成する工程後に前記ベース基板の前記主面が凸状に反るときには、単結晶炭化珪素の熱膨張係数と比べて大きい熱膨張係数を有する前記変形抑制層を形成する、請求項5に記載の炭化珪素半導体基板の製造方法。
- 前記変形抑制層を形成する工程において、単結晶炭化珪素の熱膨張係数と比べて小さい熱膨張係数を有する前記変形抑制層は酸化珪素および炭素の少なくともいずれか1つにより構成されており、単結晶炭化珪素の熱膨張係数と比べて大きい熱膨張係数を有する前記変形抑制層はアルミニウム、チタン、ニッケル、白金、および金からなる群から選択される少なくとも1つにより構成されている、請求項6に記載の炭化珪素半導体基板の製造方法。
- 前記変形抑制層を形成する工程は、熱膨張係数が単結晶炭化珪素の熱膨張係数の90%以下または110%以上である前記変形抑制層を形成する、請求項5〜請求項7のいずれか1項に記載の炭化珪素半導体基板の製造方法。
- 外径が100mm以上である主面を有し、単結晶炭化珪素からなるベース基板を準備する工程と、
前記主面上にエピタキシャル層を形成する工程と、
前記ベース基板において前記主面の反対側に位置する裏面上に変形抑制層を形成して、炭化珪素半導体基板を準備する工程と、
前記炭化珪素半導体基板に不純物イオンを注入する工程とを備え、
前記不純物イオンは、前記変形抑制層を形成した後に注入される、炭化珪素半導体装置の製造方法。
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JP2013163407A JP6136732B2 (ja) | 2013-08-06 | 2013-08-06 | 炭化珪素半導体基板およびその製造方法、ならびに炭化珪素半導体装置の製造方法 |
CN201480043414.0A CN105453219B (zh) | 2013-08-06 | 2014-06-25 | 碳化硅半导体衬底、制造碳化硅半导体衬底的方法、以及制造碳化硅半导体器件的方法 |
PCT/JP2014/066821 WO2015019733A1 (ja) | 2013-08-06 | 2014-06-25 | 炭化珪素半導体基板およびその製造方法、ならびに炭化珪素半導体装置の製造方法 |
US14/910,169 US9818608B2 (en) | 2013-08-06 | 2014-06-25 | Silicon carbide semiconductor substrate, method for manufacturing silicon carbide semiconductor substrate, and method for manufacturing silicon carbide semiconductor device where depression supression layer is formed on backside surface of base substrate opposite to main surface on which epitaxial layer is formed |
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