JP2015012201A - Vacuum suction device and manufacturing method therefor - Google Patents
Vacuum suction device and manufacturing method therefor Download PDFInfo
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Abstract
Description
本発明は、真空吸着装置およびその製造方法に関する。 The present invention relates to a vacuum suction device and a manufacturing method thereof.
半導体ウエハ等の被吸着物の吸着性能の向上を図りうる真空吸着装置が提案されている（特許文献１参照）。この真空吸着装置は、多孔質の中央載置部と、その外側を囲うように配置されている多孔質の環状載置部と、当該載置部の間に配置されている環状隔壁部と、載置部の気孔に連通する吸引孔を有する緻密質の支持部とが、実質的に隙間なく接合されることにより構成されている。 There has been proposed a vacuum suction apparatus capable of improving the adsorption performance of an object to be adsorbed such as a semiconductor wafer (see Patent Document 1). The vacuum suction device includes a porous central mounting portion, a porous annular mounting portion disposed so as to surround the outer periphery, an annular partition portion disposed between the mounting portions, A dense support portion having suction holes communicating with the pores of the placement portion is joined substantially without a gap.
しかし、隔壁部を構成するセラミックス溶射膜は、多孔質の載置部に対する密着性が高い一方、緻密質の支持部に対する密着性が低い。このため、支持部の吸引孔を通じた載置部の気孔が真空吸引される際、隔壁部と支持部との接合箇所においてリークが生じ、吸着性能の低下を招来する可能性があった。 However, the ceramic sprayed film constituting the partition wall has high adhesion to the porous mounting portion, but has low adhesion to the dense support portion. For this reason, when the pores of the mounting part through the suction holes of the support part are vacuum-sucked, there is a possibility that leakage occurs at the joint portion between the partition wall part and the support part, leading to a reduction in adsorption performance.
そこで、本発明は、物体吸着性能のさらなる向上を図りうる真空吸着装置およびその製造方法を提供することを目的とする。 Then, an object of this invention is to provide the vacuum suction apparatus which can aim at the further improvement of object suction performance, and its manufacturing method.
本発明は、中央載置部およびこれを一重または多重に環状に囲うように配置されている一または複数の環状載置部を含む、セラミックス／ガラス複合多孔質体からなる複数の載置部と、前記複数の載置部の間に配置されているセラミックス溶射膜により形成されている一または複数の環状の隔壁部と、被吸着物が載置される載置面を構成する上端面を露出させた状態の前記複数の載置部および前記一または複数の隔壁部のそれぞれを支持するように構成され、前記載置部の気孔に連通する吸引孔を有するセラミックス緻密質体からなる支持部と、を備え、前記セラミックス緻密質体、前記セラミックス／ガラス複合多孔質体および前記セラミックス溶射膜が相互に直接的に接合されることにより構成されている真空吸着装置に関する。 The present invention includes a plurality of mounting portions made of a ceramic / glass composite porous body, including a central mounting portion and one or a plurality of annular mounting portions disposed so as to surround the central mounting portion in a single or multiple manner. And exposing one or a plurality of annular partition walls formed by a ceramic sprayed film disposed between the plurality of placement portions and an upper end surface constituting a placement surface on which the object to be adsorbed is placed. A support portion made of a ceramic dense body configured to support each of the plurality of placement portions and the one or more partition walls in a state of being made, and having suction holes communicating with the pores of the placement portion; The ceramic dense body, the ceramic / glass composite porous body, and the ceramic sprayed film are directly bonded to each other.
本発明の真空吸着装置は、前記セラミックス／ガラス複合多孔質体と前記セラミックス溶射膜との接合界面である第２接合界面のうち少なくとも下端部が、前記セラミックス緻密質体と前記セラミックス溶射膜との接合界面である第１接合界面に対して鋭角をなして上方に連続する上り斜面により構成されていることを特徴とする。前記第２接合界面のうち少なくとも下端部が、前記第１接合界面との連続箇所から傾斜度が徐々に高くなるような上り斜面により構成されていることが好ましい。 In the vacuum suction device of the present invention, at least the lower end portion of the second bonding interface, which is a bonding interface between the ceramic / glass composite porous body and the ceramic sprayed film, is formed between the ceramic dense body and the ceramic sprayed film. It is characterized by comprising an ascending slope that forms an acute angle with respect to the first bonding interface, which is the bonding interface, and continues upward. It is preferable that at least a lower end portion of the second bonding interface is configured by an ascending slope whose slope gradually increases from a continuous portion with the first bonding interface.
本発明は、前記支持部を構成する、凹部および前記凹部に連通する前記吸引孔を有するセラミックス緻密質体を作製する工程と、セラミックス粉末と第１のガラスの粉末とを含む第１のスラリーを調製する工程と、前記第１のスラリーを前記セラミックス緻密質体の前記凹部に充填したうえで、前記第１のガラスの軟化点以上の温度で焼成してセラミックス／ガラス複合多孔質体を形成する工程と、前記セラミックス／ガラス複合多孔質体、または前記セラミックス／ガラス複合多孔質体および前記セラミックス緻密質体に加工を施すことにより、前記複数の載置部のうち内側から奇数番目または偶数番目の載置部に相当する領域を除いて、前記セラミックス緻密質体が露出している底面と、前記セラミックス／ガラス複合多孔質体が露出している環状の側面とを有する溝または穴を形成する工程と、前記溝または穴の前記側面にセラミックスを溶射することにより前記隔壁部を構成するセラミックス溶射膜を形成する工程と、セラミックス粉末と第２のガラスの粉末とを含む第２のスラリーを調製する工程と、前記第２のスラリーを前記側面に前記セラミックス溶射膜が形成されている前記溝または穴に充填し、前記第２のガラスの軟化点以上の温度で焼成して、セラミックス／ガラス複合多孔質体からなる、前記複数の載置部のうち内側から偶数番目または奇数番目の載置部を形成する工程と、を含む、前記真空吸着装置を製造する方法に関する。 The present invention includes a step of producing a ceramic dense body having a recess and a suction hole communicating with the recess, the first slurry including the ceramic powder and the first glass powder. And preparing the ceramic / glass composite porous body by filling the concave portion of the ceramic dense body with the first slurry and firing at a temperature equal to or higher than the softening point of the first glass. And processing the ceramic / glass composite porous body, or the ceramic / glass composite porous body and the ceramic dense body, so that the odd-numbered or even-numbered ones from the inside of the plurality of placement portions Except for the area corresponding to the mounting portion, the bottom surface where the ceramic dense body is exposed, and the ceramic / glass composite porous body is exposed. A step of forming a groove or a hole having an annular side surface, a step of spraying ceramics on the side surface of the groove or hole to form a ceramic sprayed film constituting the partition wall, a ceramic powder and a second And preparing a second slurry containing glass powder, filling the groove or hole in which the ceramic sprayed film is formed on the side surface with the second slurry, and softening the second glass Firing at a temperature equal to or higher than a point, and forming an even-numbered or odd-numbered mounting portion from the inside of the plurality of mounting portions made of a ceramic / glass composite porous body. The invention relates to a method of manufacturing a device.
本発明の方法は、前記底面が平面により構成され、かつ、前記側面のうち少なくとも下端部が当該平面に対して鋭角をなして上方に連続する面により構成されるように、前記溝または穴を形成することを特徴とする。前記底面から傾斜度が徐々に高くなるような上り斜面により前記側面のうち少なくとも下端部が構成されるように、前記溝または穴を形成することが好ましい。前記環状の溝または穴の前記底面を、その表面粗さＲａが３．０〜５．０［μｍ］の範囲に収まるように加工することが好ましい。 According to the method of the present invention, the groove or the hole is formed so that the bottom surface is constituted by a plane, and at least the lower end portion of the side surface is constituted by a surface continuous upward at an acute angle with respect to the plane. It is characterized by forming. It is preferable that the groove or the hole is formed so that at least a lower end portion of the side surface is constituted by an ascending slope whose slope gradually increases from the bottom surface. It is preferable to process the bottom surface of the annular groove or hole so that the surface roughness Ra is within a range of 3.0 to 5.0 [μm].
発明者は、前記のようなリークが生じる原因が、第１接合界面を構成する緻密質体の端面と第２接合界面を構成する多孔質体の端面とが垂直に連続していることに起因していることを知見した。セラミックス溶射膜の多孔質体（第１スラリー由来）および緻密質体のそれぞれに対する密着力が相違するため、多孔質体（第２スラリー由来）の形成のための熱処理に際して、セラミックス溶射膜が収縮して当該垂直な角部において多孔質体および緻密質体から局所的に浮き上がりやすい。 The inventor found that the cause of the leak as described above is that the end face of the dense body constituting the first joint interface and the end face of the porous body constituting the second joint interface are vertically continuous. I found out that Since the adhesion of the ceramic sprayed film to the porous body (derived from the first slurry) and the dense body are different, the ceramic sprayed film shrinks during the heat treatment for forming the porous body (derived from the second slurry). Therefore, it tends to float locally from the porous body and the dense body at the vertical corners.
当該知見に基づいてなされた本発明の真空吸着装置によれば、第２接合界面のうち少なくとも一部（下端部）が第１接合界面に対して鋭角をなして上方に連続している面により構成されている。これにより、第１接合界面と第２接合界面との連続箇所においてセラミックス溶射膜が多孔質体および緻密質体から局所的に浮き上がる事態が抑制されうる。よって、当該浮き上がりが抑制される分だけ、真空吸着装置の物体吸着性能の向上が図られる。 According to the vacuum suction device of the present invention made on the basis of the knowledge, at least a part (lower end portion) of the second bonding interface forms an acute angle with respect to the first bonding interface and continues upward. It is configured. Thereby, the situation where the ceramic sprayed film floats locally from the porous body and the dense body at the continuous portion between the first bonding interface and the second bonding interface can be suppressed. Therefore, the object suction performance of the vacuum suction device is improved by the amount that the lifting is suppressed.
（真空吸着装置の構成）
図１〜図４に示されている本発明の一実施形態としての真空吸着装置は、半導体ウエハ等の被吸着物を吸着保持するように構成されている。
(Configuration of vacuum suction device)
The vacuum suction apparatus as one embodiment of the present invention shown in FIGS. 1 to 4 is configured to suck and hold an object to be adsorbed such as a semiconductor wafer.
真空吸着装置は、略円盤状の中央載置部２１と、これを内側から順に三重に囲うように配置されている円環状の環状載置部２２〜２４と、載置部２１〜２４の間に配置されている円環状の隔壁部３１〜３３と、載置部２１〜２４および隔壁部３１〜３３を支持するように構成されている凹部を有する略有底円筒状の支持部１０と、を備えている（図１参照）。支持部１０は、載置部２１〜２４のそれぞれの開気孔に対して、吸引溝１１を介して別個独立に連通する吸引孔１２を有する（図３参照）。 The vacuum suction device includes a substantially disk-shaped central mounting portion 21, and annular annular mounting portions 22 to 24 arranged so as to surround the triple in order from the inside, and between the mounting portions 21 to 24. A ring-shaped partition wall portion 31 to 33 disposed on the bottom, and a substantially bottomed cylindrical support portion 10 having a recess configured to support the mounting portions 21 to 24 and the partition wall portions 31 to 33; (Refer to FIG. 1). The support part 10 has the suction hole 12 which communicates independently through the suction groove 11 with respect to each open hole of the mounting parts 21 to 24 (see FIG. 3).
被吸着物が載置される載置面１００において、略円形状の中央載置部２１、中央載置部２１に隣接する円環状の隔壁部３１、隔壁部３１の外側に隣接する環状載置部２２、環状載置部２２に隣接する円環状の隔壁部３２、隔壁部３２の外側に隣接する環状載置部２３、環状載置部２３に隣接する円環状の隔壁部３３、隔壁部３３の外側に隣接する環状載置部２４、環状載置部２４に隣接する円環状の支持部１０の上端面が、真空吸着装置の径方向に同心円状に連接されている（図２参照）。 On the mounting surface 100 on which the object to be adsorbed is mounted, a substantially circular central mounting portion 21, an annular partition wall 31 adjacent to the central mounting portion 21, and an annular mounting adjacent to the outside of the partition wall 31. Part 22, annular partition part 32 adjacent to annular mounting part 22, annular mounting part 23 adjacent to outside of partition part 32, annular partition part 33 adjacent to annular mounting part 23, partition part 33 An annular mounting portion 24 adjacent to the outer side of the annular mounting portion 24 and an upper end surface of the annular support portion 10 adjacent to the annular mounting portion 24 are concentrically connected in the radial direction of the vacuum suction device (see FIG. 2).
載置部２１〜２４の個数が４であるため、サイズが相違する４種類の被吸着物の吸着保持のために使用される。たとえば、サイズが異なる（φ４インチ、φ５インチ、φ６インチおよびφ８インチ）４種類の半導体ウエハの吸着保持に真空吸着装置が適用されうるように、隔壁部３１、３２および３３ならびに支持部１０の上面の内側縁部のそれぞれの真空吸着装置の中心からの距離が設定されている。 Since the number of the mounting parts 21 to 24 is 4, it is used for adsorbing and holding four types of objects to be adsorbed having different sizes. For example, the upper surfaces of the partition walls 31, 32, and 33 and the support 10 so that the vacuum chucking device can be applied to sucking and holding four types of semiconductor wafers of different sizes (φ4 inch, φ5 inch, φ6 inch, and φ8 inch). The distance from the center of each vacuum suction device of the inner edge of each is set.
被吸着物の外側縁部が隔壁部３１〜３３のうち当該被吸着物の径に対応する一の隔壁部の上端面またはそれよりも若干外側に位置するように当該一の隔壁部の径が決定される。これにより、被吸着物の外側縁部と隔壁部上端面の内側縁部との間隙に由来するリークが防止され、吸着力の低下防止が図られている。被吸着物の径が隔壁部上端面の径よりも大きい場合、両者の差が１［ｍｍ］以下に設計されることが好ましい。これにより、被吸着部の径の過大のため、その外側縁部に吸着力が作用せずに反り上がるような変形が防止されうる。 The diameter of the one partition wall portion is such that the outer edge portion of the object to be adsorbed is positioned on the upper end surface of the one partition wall portion corresponding to the diameter of the object to be adsorbed among the partition wall portions 31 to 33 or slightly outside thereof. It is determined. Thereby, the leak derived from the gap | interval of the outer edge part of a to-be-adsorbed object and the inner edge part of a partition part upper end surface is prevented, and the fall of adsorption power is aimed at. When the diameter of the object to be adsorbed is larger than the diameter of the upper end face of the partition wall, the difference between the two is preferably designed to be 1 [mm] or less. Thereby, since the diameter of the attracted portion is excessive, it is possible to prevent the warping of the outer edge portion without causing the attracting force to act.
支持部１０は、たとえばアルミナ、窒化珪素、炭化珪素およびジルコニアの中から選ばれたセラミックスの緻密質体から構成されている。当該セラミックスは、載置部２１〜２４を構成するセラミックスと同じものであることが好ましい。支持部１０は緻密質であるため、真空吸着装置の使用環境に必要な機械的強度が確保されている。 Support 10 is made of a dense ceramic body selected from, for example, alumina, silicon nitride, silicon carbide, and zirconia. The ceramic is preferably the same as the ceramic constituting the placement portions 21 to 24. Since the support portion 10 is dense, the mechanical strength necessary for the usage environment of the vacuum suction device is ensured.
載置部２１〜２４は、セラミックス／ガラス複合多孔質体からなる。載置部２１〜２４の開気孔率が２０〜５０％の範囲に収まっている。これにより、載置部２１〜２４における過度の圧力損失および吸着力の低下、機械的強度の低下、ならびに、載置面１００の平坦性の低下が回避されうる。載置部２１〜２４の平均気孔径が１０〜１５０［μｍ］の範囲に収まっている。これにより、平均気孔径の過小に由来する圧力損失の過大および吸着力の低下、平均気孔径の過大に由来する凹凸構造による界面精度の低下が回避されうる。 The mounting parts 21 to 24 are made of a ceramic / glass composite porous body. The open porosity of the mounting portions 21 to 24 is in the range of 20 to 50%. Thereby, the excessive pressure loss in the mounting parts 21-24 and the fall of adsorption | suction power, the fall of mechanical strength, and the fall of the flatness of the mounting surface 100 can be avoided. The average pore diameter of the mounting portions 21 to 24 is in the range of 10 to 150 [μm]. Thereby, it is possible to avoid an excessive pressure loss and a decrease in adsorption force due to an excessive average pore diameter and a decrease in interface accuracy due to an uneven structure resulting from an excessive average pore diameter.
載置部２１〜２４のそれぞれの開気孔率および平均気孔径は同等に設計されている。これにより、載置部２１〜２４の間での段差の発生および吸着力のばらつきの発生が回避されうる。 The open porosity and the average pore diameter of the mounting portions 21 to 24 are designed to be equal. Thereby, generation | occurrence | production of the level | step difference between the mounting parts 21-24 and the generation | occurrence | production of the dispersion | variation in adsorption | suction force can be avoided.
具体的には、載置部２１〜２４の開気孔率の最大値と最小値との差が５％以下に構成されている。たとえば、当該最大値が４０％であり、当該最小値が３５％である。載置部２１〜２４の平均気孔径の最大値と最小値との差が、平均気孔径の最大値の２０％以下に構成されている。たとえば、平均気孔径が最大値を示す載置部の平均気孔径が５０［μｍ］である場合、載置部の平均気孔径の最小値は４０［μｍ］以上である。 Specifically, the difference between the maximum value and the minimum value of the open porosity of the placement portions 21 to 24 is configured to be 5% or less. For example, the maximum value is 40% and the minimum value is 35%. The difference between the maximum value and the minimum value of the average pore diameter of the mounting portions 21 to 24 is configured to be 20% or less of the maximum value of the average pore diameter. For example, when the average pore diameter of the mounting portion having the maximum average pore diameter is 50 [μm], the minimum value of the average pore diameter of the mounting portion is 40 [μm] or more.
隔壁部３１〜３３は、セラミックス溶射膜により形成されている。隔壁部３１〜３３を構成するセラミックスとしては、アルミナ、チタニアが添加されたアルミナ等が用いられる。 The partition walls 31 to 33 are formed of a ceramic sprayed film. As the ceramic constituting the partition walls 31 to 33, alumina, alumina to which titania is added, or the like is used.
載置部２１〜２４、隔壁部３１〜３３および支持部１０は、接着剤または接合材を介することなく相互に直接的に接合されている。具体的には、２つの部材のうち一方の部材の表層を構成する材料の一部が、他方の部材の表層に存在する開気孔または凹凸等の微細構造に入り込んで密着することによって、当該微細構造に由来するリークを招来するような隙間が実質的に存在しないように当該２つの部材が接合されている。 The placement units 21 to 24, the partition units 31 to 33, and the support unit 10 are directly bonded to each other without using an adhesive or a bonding material. Specifically, a part of the material constituting the surface layer of one of the two members enters the fine structure such as open pores or irregularities existing on the surface layer of the other member, thereby closely The two members are joined so that there is substantially no gap that causes leakage due to the structure.
たとえば、多孔質体を構成するガラスの一部がセラミックス緻密質体の表面凹凸の凹部に入り込んで密着することにより、載置部２１〜２４と支持部１０とが直接的に接合されている。セラミックス溶射膜の一部がセラミックス緻密質体の表面凹凸の凹部に入り込んで密着することにより、隔壁部３１〜３３と支持部１０とが直接的に接合されている。多孔質体を構成するガラスの一部がセラミックス溶射膜の気孔に入り込んで密着し、かつ、セラミックス溶射膜の一部が多孔質体の気孔に入り込んで密着することにより、載置部２１および２２と隔壁部３１とが直接的に接合されている。 For example, the mounting parts 21 to 24 and the support part 10 are directly joined by part of the glass constituting the porous body entering and closely contacting the concave portions of the surface irregularities of the ceramic dense body. A part of the ceramic sprayed film enters and adheres to the concave portion of the surface unevenness of the ceramic dense body, so that the partition walls 31 to 33 and the support portion 10 are directly joined. Part of the glass constituting the porous body enters and adheres to the pores of the ceramic sprayed film, and part of the ceramic sprayed film enters and adheres to the pores of the porous body. And the partition wall 31 are directly joined.
載置部２１〜２４、隔壁部３１〜３３および支持部１０が実質的に隙間なく直接的に接合されているので、載置面１００が研削または研磨処理により平坦化される際、各接合界面近傍で段差が生じることが抑制される。これにより、載置面１００と半導体ウエハ等の被吸着物との間に隙間発生、吸着性能低下および非吸着物の平坦度低下が防止される。 Since the mounting parts 21 to 24, the partition walls 31 to 33, and the support part 10 are directly joined substantially without a gap, when the mounting surface 100 is flattened by grinding or polishing treatment, each joint interface The occurrence of a step in the vicinity is suppressed. As a result, the generation of a gap between the mounting surface 100 and the object to be adsorbed such as a semiconductor wafer, a decrease in adsorption performance, and a decrease in flatness of the non-adsorbed object are prevented.
図４（ａ）（ｂ）において、支持部１０（またはこれを構成するセラミックス緻密質体）と隔壁部３１〜３３（またはこれを構成するセラミックス／ガラス複合多孔質体）との接合界面である第１接合界面Ｐ１が一点鎖線で表わされ、載置部２１〜２４（またはこれを構成するセラミックス多孔質体）と隔壁部３１〜３３（またはこれを構成するセラミックス溶射膜）との接合界面である第２接合界面Ｐ２が二点鎖線で表わされている。 4 (a) and 4 (b), it is a joint interface between the support portion 10 (or a ceramic dense body constituting the support portion) and the partition portions 31 to 33 (or the ceramic / glass composite porous body constituting the portion). 1st joining interface P1 is represented by a dashed-dotted line, and the joining interface of mounting part 21-24 (or ceramic porous body which comprises this) and partition part 31-33 (or ceramic sprayed film which comprises this) The second bonding interface P2 is represented by a two-dot chain line.
第２接合界面Ｐ２の少なくとも下端部が、第１接合界面Ｐ１に対して鋭角をなして上方に連続する面により構成されている。第２接合界面Ｐ２の少なくとも下端部が、第１接合界面Ｐ１から徐々に高くなるような上り斜面により構成されている。当該上り斜面が一定の曲率半径を有していてもよい。 At least the lower end portion of the second bonding interface P2 is formed by a surface that forms an acute angle with respect to the first bonding interface P1 and continues upward. At least the lower end portion of the second bonding interface P2 is configured by an ascending slope that gradually increases from the first bonding interface P1. The ascending slope may have a certain radius of curvature.
第２接合界面Ｐ２の全部が第１接合界面Ｐ１に対して傾斜している必要はなく、少なくとも下端部（たとえば第１接合界面Ｐ１を基準とする第２接合界面Ｐ２の高さのうち５〜２０％程度）のみが第１接合界面Ｐ１に対して傾斜し、少なくとも上端部は第１接合界面Ｐ１に対して垂直であってもよい。 It is not necessary for the entire second bonding interface P2 to be inclined with respect to the first bonding interface P1, and at least the lower end (for example, 5 to 5 of the height of the second bonding interface P2 with reference to the first bonding interface P1). Only about 20%) may be inclined with respect to the first bonding interface P1, and at least the upper end portion may be perpendicular to the first bonding interface P1.
後述する複数の載置部２１〜２４の作製手順の相違に応じて、第１接合界面Ｐ１に対する第２接合界面Ｐ２の傾斜態様が異なる。すなわち、内側から奇数番目の載置部２１および２３が第１のスラリー由来の多孔質体であり、内側から偶数番目の載置部２２および２４が第２のスラリー由来の多孔質体である場合、図４（ａ）に示されているように、奇数番目の載置部２１（２３）の下端部が張り出すように形成されるような形態で、第１接合界面Ｐ１に対して第２接合界面Ｐ２が傾斜して連続する。一方、内側から奇数番目の載置部２１および２３が第２のスラリー由来の多孔質体であり、内側から偶数番目の載置部２２および２４が第１のスラリー由来の多孔質体である場合、図４（ｂ）に示されているように、偶数番目の載置部２２（２４）の下端部が張り出すように形成されるような形態で、第１接合界面Ｐ１に対して第２接合界面Ｐ２が傾斜して連続する。 The inclination aspect of the second bonding interface P2 with respect to the first bonding interface P1 differs depending on the difference in the manufacturing procedure of the plurality of mounting portions 21 to 24 described later. That is, when the odd-numbered placement parts 21 and 23 from the inside are the porous bodies derived from the first slurry, and the even-numbered placement parts 22 and 24 from the inside are the porous bodies derived from the second slurry. As shown in FIG. 4 (a), the second end portion of the odd-numbered mounting portion 21 (23) is formed so as to protrude so as to be second with respect to the first bonding interface P1. The joining interface P2 is inclined and continuous. On the other hand, the odd-numbered placement parts 21 and 23 from the inside are the porous bodies derived from the second slurry, and the even-numbered placement parts 22 and 24 from the inside are the porous bodies derived from the first slurry. As shown in FIG. 4B, the second mounting portion 22 (24) is formed so that the lower end portion of the even-numbered mounting portion 22 (24) protrudes to the second bonding interface P1. The joining interface P2 is inclined and continuous.
「面」は、ここでは数学的な意味での面ではなく、各部材の表面構造に由来する多少の凹凸の存在が許容されているような面を意味する。 “Surface” here is not a face in a mathematical sense, but means a face where the presence of some unevenness derived from the surface structure of each member is allowed.
隔壁部３１、３２および３３の上端面ならびに支持部１０上端面の内側縁部の形状、ひいてはこれらにより画定される載置部２１〜２４のそれぞれの外側縁部の形状は円形状に限定されず、吸着保持対象となる被吸着物の形状に応じて略矩形状等、さまざまに変更されてもよい。環状載置部の個数が３とは異なるように変更され、これに応じて環状の隔壁部の個数も変更されてもよい。 The shapes of the upper end surfaces of the partition walls 31, 32, and 33 and the inner edge of the upper end surface of the support 10, and thus the shapes of the outer edges of the mounting portions 21 to 24 defined by these, are not limited to a circular shape. Depending on the shape of the object to be adsorbed and held, the shape may be variously changed such as a substantially rectangular shape. The number of annular mounting portions may be changed to be different from 3, and the number of annular partition walls may be changed accordingly.
（真空吸着装置の機能）
隔壁部３１〜３３のうちいずれか１つの上端面または支持部１０の環状の上端面に被吸着物の外側縁部が全周にわたり位置するように、当該被吸着物が載置面１００に載置される。支持部１の吸引孔１２に接続されている真空ポンプ等の真空吸引装置（図示略）を動作させることにより、各載置部２１〜２４のそれぞれの開気孔を通じて被吸着物に対して吸引力が作用する。これにより、被吸着物が真空吸着装置により吸着保持される。
(Function of vacuum suction device)
The object to be adsorbed is placed on the placement surface 100 such that the outer edge of the object to be adsorbed is located on the upper end surface of any one of the partition walls 31 to 33 or the annular upper end surface of the support part 10. Placed. By operating a vacuum suction device (not shown) such as a vacuum pump connected to the suction hole 12 of the support portion 1, a suction force is exerted on the object to be adsorbed through each open hole of each mounting portion 21 to 24. Act. As a result, the object to be adsorbed is adsorbed and held by the vacuum adsorption device.
（真空吸着装置の製造方法）
前記構成の真空吸着装置の製造に際して、まず、支持部１０を構成する略有底円筒状のセラミックス緻密質体が作製される。具体的には、所定量のバインダが添加されたアルミナ等のセラミックス粉末が造粒処理され、該造粒粉末が一軸プレス成形された上でさらにＣＩＰ成形されることにより略円盤状または円柱状のセラミックス成形体が作製される。
(Manufacturing method of vacuum suction device)
When manufacturing the vacuum suction apparatus having the above-described configuration, first, a substantially bottomed cylindrical ceramic dense body constituting the support portion 10 is manufactured. Specifically, a ceramic powder such as alumina to which a predetermined amount of binder is added is granulated, and the granulated powder is uniaxially press-molded and then further CIP-molded to form a substantially disk-like or columnar shape. A ceramic compact is produced.
このセラミックス成形体が加工されることにより、上方に開口した略円柱状の凹部が形成され、吸引溝１１となる所定形状の溝が当該凹部の底部に形成され、かつ、吸引孔１２となる貫通孔が溝の所定箇所に形成される。当該加工が施されたセラミックス成形体が、必要に応じて脱脂処理された後、適当な雰囲気および温度の時間変化態様により定義される焼成条件下で焼成され、適宜加工されることにより支持部１０を構成する略有底円筒状のセラミックス緻密質体が作製される（図５（ａ）参照）。 By processing this ceramic molded body, a substantially cylindrical recess opening upward is formed, a groove having a predetermined shape to be the suction groove 11 is formed at the bottom of the recess, and the through hole to be the suction hole 12 is formed. A hole is formed at a predetermined location of the groove. The ceramic molded body subjected to the processing is subjected to a degreasing treatment as necessary, and then fired under firing conditions defined by an appropriate atmosphere and temperature variation mode, and appropriately processed, thereby supporting part 10. Is formed into a substantially bottomed cylindrical ceramic dense body (see FIG. 5A).
支持部１０の吸引溝１１および吸引孔１２に樹脂等の焼失材料が充填される。また、アルミナ粉末または炭化珪素粉末等のセラミックス粉末および第１のガラスの粉末に水またはアルコール等の溶剤が添加された上で、ボールミルまたはミキサー等の公知の方法により当該粉末が混合されることにより第１のスラリーが調製される。 The suction groove 11 and the suction hole 12 of the support portion 10 are filled with a burned-out material such as resin. In addition, by adding a solvent such as water or alcohol to ceramic powder such as alumina powder or silicon carbide powder and first glass powder, the powder is mixed by a known method such as a ball mill or a mixer. A first slurry is prepared.
第１のスラリーの流動性が適当に確保されるように、セラミックス粉末の粒度および第１のガラスの粉末の添加量などが勘案された上で、水またはアルコール等の添加量が調節される。 The addition amount of water, alcohol, or the like is adjusted in consideration of the particle size of the ceramic powder and the addition amount of the first glass powder so that the fluidity of the first slurry is appropriately secured.
セラミックス粉末の粒径（粒度分布）および焼成温度におけるガラスの粘性等が勘案されて、セラミックス粉末に対する第１のガラスの粉末の添加量が定められる。第１のガラスの粉末の添加量の過多である場合、セラミックス成形体の充填率の低下を招来しひいては焼成収縮が生じる。これとは逆に第１のガラスの粉末が過少である場合、セラミックス成形体におけるセラミックス粉末の結合強度が低下し、脱粒または欠け等が生ずる。このため、ガラス粉末の量は、セラミックス成形体におけるセラミックス粉末同士の所望の結合強度および平均気孔径が確保されることを条件としてできるだけ少ないことが好ましい。たとえば、セラミックス粉末１００質量部に対して第１のガラスの粉末５〜３０質量部が添加されることが好ましい。 The amount of the first glass powder added to the ceramic powder is determined in consideration of the particle size (particle size distribution) of the ceramic powder and the viscosity of the glass at the firing temperature. If the amount of the first glass powder added is excessive, the filling rate of the ceramic molded body is lowered, and firing shrinkage occurs. On the other hand, when the first glass powder is too small, the bonding strength of the ceramic powder in the ceramic molded body is reduced, and degranulation or chipping occurs. For this reason, it is preferable that the quantity of glass powder is as small as possible on condition that the desired bond strength and average pore diameter of ceramic powder in a ceramic molded body are ensured. For example, 5 to 30 parts by mass of the first glass powder is preferably added to 100 parts by mass of the ceramic powder.
第１のスラリーが支持部１０の凹部に充填され、必要に応じて、第１のスラリー中の残留気泡を除去するための真空脱泡処理または振動処理が施される。第１のスラリーが十分に乾燥された後、当該乾燥体が第１のガラスの軟化点以上の温度で焼成されることにより、セラミックス／ガラス複合多孔質体２０が形成される（図５（ａ）参照）。この段階では、支持部１０および多孔質体２０はともに加工代または削り代の確保の観点から、最終的な厚みよりも厚くなるように設計されることが好ましい。 The first slurry is filled in the concave portion of the support portion 10 and, if necessary, vacuum defoaming treatment or vibration treatment for removing residual bubbles in the first slurry is performed. After the first slurry is sufficiently dried, the dried body is fired at a temperature equal to or higher than the softening point of the first glass, whereby the ceramic / glass composite porous body 20 is formed (FIG. 5A). )reference). At this stage, it is preferable that both the support portion 10 and the porous body 20 are designed to be thicker than the final thickness from the viewpoint of securing a machining allowance or a machining allowance.
この際の焼成温度が第１のガラスの軟化点より低いと、ガラスが支持部１０に融着しないため支持部１０と多孔質体２０とを密着させることができない。この焼成温度が高過ぎても第１のスラリー乾燥物の変形または収縮が生じるために、支持部１０と多孔質体２０とを密着させることができない。したがって、第１のスラリー乾燥物の焼成温度は、第１のガラスの軟化点以上のできるだけ低い温度に調節されることが望ましい。 If the firing temperature at this time is lower than the softening point of the first glass, the glass is not fused to the support portion 10 and the support portion 10 and the porous body 20 cannot be brought into close contact with each other. Even if this firing temperature is too high, deformation or shrinkage of the first slurry dried product occurs, so that the support 10 and the porous body 20 cannot be brought into close contact with each other. Therefore, it is desirable to adjust the firing temperature of the first dried slurry to a temperature as low as possible above the softening point of the first glass.
多孔質体２０（およびこれに由来する載置部）の開気孔率および平均気孔径は、基本的に、原料粉末であるセラミックス粉末の粒度分布の調整により調節される。セラミックス粉末および第１のガラスの粉末の配合比率、第１のスラリーの粘度、第１のスラリーの支持部１０への充填率、粒子状樹脂、繊維状樹脂およびカーボン粉末等の焼失材の添加態様の調節等によっても多孔質体２０の開気孔率および平均気孔径が調節されうる。 The open porosity and average pore diameter of the porous body 20 (and the mounting portion derived therefrom) are basically adjusted by adjusting the particle size distribution of the ceramic powder as the raw material powder. Mixing ratio of ceramic powder and first glass powder, viscosity of first slurry, filling rate of first slurry to support 10, addition mode of burnout material such as particulate resin, fibrous resin and carbon powder The open porosity and average pore diameter of the porous body 20 can also be adjusted by adjusting the above.
多孔質体２０の開気孔率を２０〜５０％の範囲に制御し、かつ、その平均気孔径を１０〜１５０［μｍ］の範囲に制御するためには、平均粒径２０〜５００［μｍ］であるセラミックス粉末が用いられ、セラミックス粉末と比較して平均粒径が小さい第１のガラスの粉末が用いられる。第１のガラスの粉末の平均粒径は、セラミックス粉末の平均粒径の１／３以下であることが好ましく、１／５以下であることがより好ましい。これは、第１のガラスの粉末の平均粒径がセラミックス粉末よりも大きいと、セラミックス粉末の充填が阻害されて第１のスラリー乾燥物がその焼成時に焼成収縮を起こし、多孔質体２０にクラックが発生し、あるいは、支持部１０と多孔質体２０との密着性が低下する可能性がある。 In order to control the open porosity of the porous body 20 in the range of 20 to 50% and to control the average pore diameter in the range of 10 to 150 [μm], the average particle diameter of 20 to 500 [μm]. A ceramic powder is used, and a first glass powder having an average particle size smaller than that of the ceramic powder is used. The average particle size of the first glass powder is preferably 1/3 or less, more preferably 1/5 or less, of the average particle size of the ceramic powder. This is because if the average particle size of the first glass powder is larger than that of the ceramic powder, the filling of the ceramic powder is hindered, and the first slurry dried product undergoes firing shrinkage during firing, and the porous body 20 is cracked. May occur, or the adhesion between the support 10 and the porous body 20 may be reduced.
多孔質体２０の構成材料であるセラミックスと比較して熱膨張係数の値が小さいガラスが第１のガラスとして採用されることが好ましい。これにより、第１のスラリー乾燥物の焼成に際して、支持部１０の凹部底面および側面に対して実質的に隙間なく直接的に接合される多孔質体２０が作製されうる。多孔質体２０において結合材としての役割を果たすガラスに圧縮応力が加わった状態が実現される。ガラスは一般的に引張強度に弱いため、当該状態の実現により、多孔質体２０ひいてはこれに由来する載置部の強度が高められ、研削加工時の脱粒または欠け等の発生が抑制される。 It is preferable that a glass having a smaller coefficient of thermal expansion than that of the ceramic material that is a constituent material of the porous body 20 is adopted as the first glass. Thereby, the porous body 20 that is directly bonded to the bottom surface and the side surface of the concave portion of the support portion 10 can be produced at the time of firing the first dried slurry. A state in which compressive stress is applied to the glass serving as a binder in the porous body 20 is realized. Since glass is generally weak in tensile strength, the realization of this state increases the strength of the porous body 20 and thus the placement portion derived therefrom, and suppresses the occurrence of grain loss or chipping during grinding.
続いて、多孔質体２０（または多孔質体２０および支持部１０）が加工処理されることにより、複数の載置部２１〜２４のうち内側から奇数番目の載置部２１および２３に相当する領域を除いて、内側から偶数番目の載置部２２および２４のそれぞれが形成される円環状の溝２０２および２０４が形成される（図５（ｂ）参照）。各溝２０２、２０４の幅は、被溶射面に対して、アルミナ等のセラミックス溶射材を到達させるための空間が確保される程度の幅に設定されている。 Subsequently, the porous body 20 (or the porous body 20 and the support portion 10) is processed to correspond to the odd-numbered placement portions 21 and 23 from the inside among the plurality of placement portions 21 to 24. Except for the region, annular grooves 202 and 204 in which the even-numbered mounting portions 22 and 24 are formed from the inside are formed (see FIG. 5B). The widths of the grooves 202 and 204 are set to such a width that a space for allowing a ceramic sprayed material such as alumina to reach the sprayed surface is secured.
溝２０２は、支持部１０を構成するセラミックス緻密質体が露出している底面と、載置部２１および２３のそれぞれを構成するセラミックス／ガラス複合多孔質体が露出している環状の両側面とを有する。溝２０４は、支持部１０を構成するセラミックス緻密質体が露出している底面および環状の外側面と、載置部２３を構成するセラミックス／ガラス複合多孔質体が露出している環状の内側面とを有する。各溝２０２、２０４の底面が水平面（第１接合界面Ｐ１を構成する）により構成され、かつ、多孔質体が露出している側面の少なくとも下端部が当該平面に対して鋭角をなして連続する上り斜面（第２接合界面Ｐ２を構成する。）により構成されている。各溝２０２、２０４の多孔質体が露出している側面は、下端部が上端部よりも外側に張り出しているような勾配を有している（図４（ａ）参照）。 The groove 202 includes a bottom surface where the ceramic dense body constituting the support portion 10 is exposed, and both annular side surfaces where the ceramic / glass composite porous body constituting each of the placement portions 21 and 23 is exposed. Have The groove 204 includes a bottom surface and an annular outer surface where the ceramic dense body constituting the support portion 10 is exposed, and an annular inner surface where the ceramic / glass composite porous body constituting the mounting portion 23 is exposed. And have. The bottom surfaces of the grooves 202 and 204 are each constituted by a horizontal plane (which constitutes the first bonding interface P1), and at least the lower end portion of the side surface from which the porous body is exposed continues at an acute angle with respect to the plane. It is comprised by the upslope (it comprises 2nd junction interface P2). The side surface where the porous body of each groove 202, 204 is exposed has a gradient such that the lower end portion projects outward from the upper end portion (see FIG. 4A).
各溝２０２、２０４の底面は水平面に限られず、多孔質体が露出している側面が当該底面に対して鋭角をなして上方に連続するという条件が満たされる範囲で、少なくとも当該連続箇所において局所的にまたは全体的に斜面または勾配曲面により構成されていてもよい。 The bottom surface of each groove 202, 204 is not limited to a horizontal plane, and is locally at least at the continuous location as long as the condition that the side surface where the porous body is exposed forms an acute angle with respect to the bottom surface and continues upward is satisfied. Alternatively, it may be constituted by a slope or a curved slope.
次に、溝２０２および２０４のそれぞれの多孔質体の露出箇所およびこれに連続する緻密質体の露出箇所にプラズマ溶射またはローカイド溶射により、環状の隔壁部３１〜３３のそれぞれを構成するセラミックス溶射膜３０１〜３０３が形成される（図５（ｃ）参照）。これにより、セラミックス溶射膜３０１〜３０３は、溝２０２および２０４の側面を構成する多孔質体全体と、溝２０２および２０４の底面において少なくとも側面（多孔質体の露出箇所）に対する連続箇所で緻密質体にも密着するように形成される（図４（ａ）（ｂ）参照）。この際、被溶射面を構成する多孔質体の露出箇所にはサンドブラスト等により粗面化する必要はない。一方、各溝２０２、２０４の形成時または当該形成後に、被溶射面を構成する緻密質体の露出箇所の表面粗さＲａが３．０〜５．０［μｍ］の範囲に収まるように加工（粗面化処理）されていることが好ましい。 Next, a ceramic sprayed coating that constitutes each of the annular partition walls 31 to 33 by plasma spraying or locus spraying at the exposed portions of the porous bodies of the grooves 202 and 204 and the exposed portions of the dense body continuous therewith. 301 to 303 are formed (see FIG. 5C). As a result, the ceramic sprayed films 301 to 303 are dense in the whole porous body constituting the side surfaces of the grooves 202 and 204 and at a continuous portion at least on the side surfaces (exposed portions of the porous body) on the bottom surfaces of the grooves 202 and 204. (See FIGS. 4A and 4B). At this time, it is not necessary to roughen the exposed portion of the porous body constituting the sprayed surface by sandblasting or the like. On the other hand, when the grooves 202 and 204 are formed or after the formation, the surface roughness Ra of the exposed portion of the dense body constituting the sprayed surface is processed within the range of 3.0 to 5.0 [μm]. (Roughening treatment) is preferable.
セラミックス溶射膜３０１〜３０３、ひいては隔壁部３１〜３３の厚みは、一般に溶射によって実現可能な膜厚であって気密性が確保されれば特に限定されず、たとえば０．１〜３［ｍｍ］の範囲に収まるように調節される。セラミックス溶射膜３０１〜３０３の厚さは、溶射ガンの変位速度または溶射回数の調節により制御される。必要に応じてセラミックス溶射膜３０１〜３０３の表面が研削されてもよく、溶射膜が不要な箇所にあらかじめマスキングが施されていてもよい。プラズマ溶射に用いられる原料粉末の粒径は被溶射面である側面において露出している多孔質体の気孔率および平均気孔径に応じて調整されるが、たとえば密着性および気密性の観点から１０〜５０［μｍ］の範囲に収まるように調整される。 The thicknesses of the ceramic sprayed films 301 to 303 and the partition walls 31 to 33 are not particularly limited as long as they are generally film thicknesses that can be realized by thermal spraying and ensure airtightness. For example, the thickness is 0.1 to 3 [mm]. Adjusted to fit within range. The thickness of the ceramic sprayed films 301 to 303 is controlled by adjusting the displacement speed of the spray gun or the number of sprays. If necessary, the surfaces of the ceramic sprayed films 301 to 303 may be ground, or masking may be performed in advance on portions where the sprayed film is unnecessary. The particle size of the raw material powder used for plasma spraying is adjusted according to the porosity and the average pore diameter of the porous body exposed on the side surface that is the sprayed surface. For example, from the viewpoint of adhesion and airtightness, 10 It is adjusted so as to be within a range of ˜50 [μm].
セラミックス溶射膜３０１〜３０３は、被溶射面である各溝２０２、２０４の側面が多孔質体であるので、被溶射面が緻密質体である場合よりも緻密化し難い。しかるに、セラミックス溶射膜３０１〜３０３に適度な気孔をもたせることで、載置部２１〜２４と隔壁部３１〜３３との支持剛性の偏差が低減されるので、被吸着物に対する隔壁部３１〜３３の転写が防止される。 The ceramic sprayed films 301 to 303 are more difficult to be densified than the case where the sprayed surfaces are dense bodies because the side surfaces of the grooves 202 and 204 that are the sprayed surfaces are porous bodies. However, by providing appropriate pores in the ceramic sprayed films 301 to 303, the deviation of the support rigidity between the mounting parts 21 to 24 and the partition parts 31 to 33 is reduced, so that the partition parts 31 to 33 with respect to the object to be adsorbed. Is prevented from being transferred.
セラミックス溶射膜３０１〜３０３に含まれる気孔が後工程で第２のスラリーに含まれるガラスにより封止される。すなわち、隔壁部３１〜３３はセラミックス溶射膜３０１〜３０３とその気孔に入り込んで融着したガラスとから構成されている。これにより、隔壁部３１〜３３の気密性が高められる。さらに隔壁部３１〜３３の強度が載置部２１〜２４の多孔質体に近づくために転写の問題が解消される。 The pores included in the ceramic sprayed films 301 to 303 are sealed with glass included in the second slurry in a later step. That is, the partition walls 31 to 33 are composed of the ceramic sprayed films 301 to 303 and the glass that has entered and fused into the pores. Thereby, the airtightness of the partition parts 31-33 is improved. Furthermore, since the strength of the partition walls 31 to 33 approaches the porous body of the mounting parts 21 to 24, the transfer problem is solved.
セラミックス溶射膜３０１〜３０３に形成される気孔の気孔径は、原料であるセラミックス溶射材の粒径の調整により調整され、たとえば被溶射面である多孔質体の気孔径に合わせて調整されることが望ましい。隔壁部３１〜３３は、載置部２１、２３と実質的に隙間なく接合されているが、支持部１０の凹部底面とも同様に実質的に隙間なく接合されている。 The pore diameter of the pores formed in the ceramic sprayed films 301 to 303 is adjusted by adjusting the particle diameter of the ceramic sprayed material as a raw material, for example, adjusted to the pore diameter of the porous body that is the sprayed surface. Is desirable. The partition walls 31 to 33 are joined to the placement parts 21 and 23 with substantially no gap, but are joined to the bottom surface of the concave portion of the support part 10 with substantially no gap as well.
隔壁部３１〜３３の気孔率は、その気密性および強度を確保する観点から１０％以下に制御されている。溶射ガンの先端から被溶射面である溝２０２、２０４における多孔質体が露出している側面までの距離（溶射距離）の調節により隔壁部３１〜３３の気孔率が調節される。例えば溶射距離は１００〜２００［ｍｍ］の範囲で調節されうる。隔壁部３１〜３３の気孔率の下限値は、載置部２１〜２４との支持剛性の偏差が勘案され、好ましくは３％、より好ましくは５％である。 The porosity of the partition walls 31 to 33 is controlled to 10% or less from the viewpoint of ensuring the airtightness and strength. The porosity of the partition walls 31 to 33 is adjusted by adjusting the distance (spraying distance) from the tip of the spray gun to the side surface where the porous body is exposed in the grooves 202 and 204 that are the sprayed surfaces. For example, the spraying distance can be adjusted in the range of 100 to 200 [mm]. The lower limit value of the porosity of the partition walls 31 to 33 is preferably 3%, more preferably 5%, taking into account the deviation of the support rigidity from the mounting parts 21 to 24.
隔壁部３１〜３３の気孔率は、セラミックス溶射膜３０１〜３０３に含まれる気孔が第２のスラリーに含まれるガラスの融着により封止された結果としての値であり、セラミックス溶射膜３０１〜３０３それ自体の気孔率については特に限定されない。 The porosity of the partition walls 31 to 33 is a value as a result of sealing the pores included in the ceramic sprayed films 301 to 303 by fusing the glass included in the second slurry, and the ceramic sprayed films 301 to 303. The porosity of itself is not particularly limited.
次に、溝２０２、２０４に連通する吸引溝１１および吸引孔１２に樹脂等の焼失材料が充填される。また、アルミナ粉末または炭化珪素粉末等のセラミックス粉末および第２のガラスの粉末を含む第２のスラリーが第１のスラリーと同様の方法で調製される。 Next, the suction grooves 11 and the suction holes 12 communicating with the grooves 202 and 204 are filled with a burned-out material such as resin. Also, a second slurry containing ceramic powder such as alumina powder or silicon carbide powder and second glass powder is prepared in the same manner as the first slurry.
第１のガラスおよび第２のガラスは同一であっても異なっていてもよい。第１のガラスおよび第２のガラスが同一である場合、比較的軟化点が低いガラスが採用されることが好ましい。第１のガラスおよび第２のガラスが異なる場合、少なくとも第２のガラスとして比較的軟化点が低いガラスが採用されることが好ましい。 The first glass and the second glass may be the same or different. When the first glass and the second glass are the same, it is preferable to employ a glass having a relatively low softening point. When the first glass and the second glass are different, it is preferable to employ a glass having a relatively low softening point as at least the second glass.
溝２０２および２０２に第２のスラリーが充填されたうえで十分に乾燥され、当該乾燥物が第２のガラスの軟化点以上（第１のガラスの軟化点未満）の温度で焼成される。これにより、第２のスラリー由来の載置部２２および２４が形成される（図５（ｄ）参照）。この際、第１のスラリー由来の載置部２１および２３の一部またはセラミックス溶射膜３０１〜３０３が溶融または軟化して収縮または隙間が生じる事態が回避される必要がある。このため、焼成収縮を起こしやすいセラミックス溶射膜３０１〜３０３が加熱される第２のスラリー乾燥物の焼成は、できるだけ低温で実施されることが望ましい。 The grooves 202 and 202 are filled with the second slurry and sufficiently dried, and the dried product is fired at a temperature equal to or higher than the softening point of the second glass (less than the softening point of the first glass). Thereby, the mounting parts 22 and 24 derived from the second slurry are formed (see FIG. 5D). At this time, it is necessary to avoid a situation in which a part of the placement parts 21 and 23 derived from the first slurry or the ceramic sprayed films 301 to 303 are melted or softened to cause shrinkage or gaps. For this reason, it is desirable that the firing of the second slurry dried product in which the ceramic sprayed films 301 to 303 that are likely to undergo firing shrinkage are heated be performed at as low a temperature as possible.
たとえば、第１のガラスおよび第２のガラスが同一である場合、当該ガラスとして軟化点が９００［℃］以下のホウ珪酸系ガラスが採用される。第１のガラスおよび第２のガラスが異なる場合、第１のガラスとして軟化点が１０００［℃］近傍のアルミノ珪酸塩系ガラスが採用され、第２のガラスとして軟化点が９００［℃］以下のホウ珪酸系ガラスが採用される。 For example, when the first glass and the second glass are the same, a borosilicate glass having a softening point of 900 [° C.] or less is employed as the glass. When the first glass and the second glass are different, an aluminosilicate glass having a softening point near 1000 [° C.] is adopted as the first glass, and a softening point is 900 [° C.] or less as the second glass. Borosilicate glass is used.
そして、支持部１０、載置部２１〜２４および隔壁部３１〜３３のそれぞれの上端面が研削または研磨処理されることにより、平坦度が０．８［μｍ］以下である載置面１００が形成される。この際、載置部２１〜２４および隔壁部３１〜３３は支持部１０よりも研削・研磨抵抗が小さいために削られやすいが、前記のように多孔質体により構成される載置部２１〜２４およびセラミックス溶射膜により構成される隔壁部３１〜３３の開気孔率または平均気孔径の調整により、各部間の段差発生が防止され、載置面１００の平坦度の向上が図られる。支持部１０、載置部２１〜２４および隔壁部３１〜３３が相互に直接的に接合されているので、当該研磨加工が容易となる。これにより、真空吸着装置により吸着保持された際の被吸着物の平坦度の向上が図られる。 And the mounting surface 100 whose flatness is 0.8 [micrometers] or less is obtained by grinding or polishing each upper end surface of the support unit 10, the mounting units 21 to 24, and the partition walls 31 to 33. It is formed. At this time, the mounting parts 21 to 24 and the partition walls 31 to 33 are easy to be scraped because the grinding / polishing resistance is smaller than that of the support part 10, but the mounting parts 21 to 21 configured by the porous body as described above. By adjusting the open porosity or the average pore diameter of the partition walls 31 to 33 constituted by 24 and the ceramic sprayed film, generation of a step between the respective parts is prevented, and the flatness of the mounting surface 100 is improved. Since the support part 10, the mounting parts 21-24, and the partition parts 31-33 are directly joined mutually, the said grinding | polishing process becomes easy. Thereby, the flatness of the object to be adsorbed when adsorbed and held by the vacuum adsorption device is improved.
本実施形態では、内側から奇数番目の載置部２１および２３が第１のスラリー由来の多孔質体であり、内側から偶数番目の載置部２２および２４が第２のスラリー由来の多孔質体であるが、他の実施形態としてこれが逆であってもよい。すなわち、多孔質体２０（または多孔質体２０および支持部１０）が加工処理されることにより、内側から偶数番目の載置部２２および２４に相当する領域を除いて、内側から奇数番目の載置部２１および２３のそれぞれが形成される円形状の穴および円環状の溝が形成されてもよい。 In the present embodiment, odd-numbered placement parts 21 and 23 from the inside are porous bodies derived from the first slurry, and even-numbered placement parts 22 and 24 from the inside are porous bodies derived from the second slurry. However, this may be reversed in other embodiments. That is, by processing the porous body 20 (or the porous body 20 and the support portion 10), except for the regions corresponding to the even-numbered placement portions 22 and 24 from the inside, the odd-numbered placement from the inside. Circular holes and annular grooves in which the placement portions 21 and 23 are formed may be formed.
この場合も、穴および溝の緻密質体が露出している底面が水平面（第１接合界面Ｐ１を構成する）により構成され、かつ、多孔質体が露出している側面の少なくとも一部が当該水平面に対して鋭角をなして上方に連続する面（第２接合界面Ｐ２を構成する。）により構成されている（図４（ｂ）参照）。そして、当該穴および溝のそれぞれの被溶射面にセラミックス溶射膜３０１〜３０３が形成された後、第２のスラリーが当該穴および溝のそれぞれに充填された上で乾燥され、当該乾燥物が焼成されることによって載置部２１および２３が作製される。 Also in this case, the bottom surface where the dense body of the hole and the groove is exposed is constituted by a horizontal surface (which constitutes the first bonding interface P1), and at least a part of the side surface where the porous body is exposed is It is comprised by the surface (the 2nd junction interface P2 is comprised) which makes an acute angle with respect to a horizontal surface, and continues upwards (refer FIG.4 (b)). Then, after the ceramic sprayed films 301 to 303 are formed on the surfaces to be sprayed of the holes and grooves, the second slurry is filled in the holes and grooves and dried, and the dried product is fired. As a result, the placement portions 21 and 23 are produced.
支持部１０の凹部において第２のスラリー由来の載置部に相当する部分に樹脂が配置され、その後で第１のスラリーが当該凹部の残りの部分に充填され、第１のスラリー乾燥物の焼成に際して当該樹脂を焼失させることにより溝２０２および２０４が形成されてもよい。樹脂にセラミックス粉末等のフィラーを混ぜ、溝２０２および２０４の成形性を高めることも可能である。 Resin is arrange | positioned in the part corresponded to the mounting part derived from a 2nd slurry in the recessed part of the support part 10, and after that, the 1st slurry is filled into the remaining part of the said recessed part, and baking of a 1st slurry dried material is carried out. In this case, the grooves 202 and 204 may be formed by burning out the resin. It is also possible to improve the moldability of the grooves 202 and 204 by mixing a filler such as ceramic powder into the resin.
（実施例）
（実施例１）
支持部１０として、径（内径）φ２００［ｍｍ］、高さ（深さ）３５［ｍｍ］の凹部を有し、径（外径）φ２５０［ｍｍ］、高さ（厚さ）５０［ｍｍ］の略有底円筒状のアルミナ緻密質焼結体（熱膨張係数：８．０×１０-6［Ｋ-1］）が作製された。
(Example)
Example 1
The support portion 10 has a recess having a diameter (inner diameter) of φ200 [mm] and a height (depth) of 35 [mm], a diameter (outer diameter) of φ250 [mm], and a height (thickness) of 50 [mm]. The substantially dense bottomed cylindrical alumina dense sintered body (thermal expansion coefficient: 8.0 × 10 −6 [K −1 ]) was produced.
第１のスラリーが、アルミナ粉末（平均粒径１２５［μｍ］）、ほう珪酸ガラス粉末（平均粒径２０［μｍ］、熱膨張係数４０×１０-7［Ｋ-1］、軟化点７５０［℃］）および蒸留水が１００：２０：２０の質量比で混合された上でミキサーを用いて混錬されることにより調整された。第１のスラリーが支持部１０の凹部に注入され、真空脱泡後、振動により沈降充填された上で、１００［℃］で乾燥され、当該乾燥物が１０００［℃］で焼成されることにより多孔質体が形成された（図５（ａ）参照）。 The first slurry is alumina powder (average particle size 125 [μm]), borosilicate glass powder (average particle size 20 [μm], thermal expansion coefficient 40 × 10 −7 [K −1 ], softening point 750 [° C.] ] And distilled water were mixed at a mass ratio of 100: 20: 20 and then kneaded using a mixer. The first slurry is injected into the concave portion of the support portion 10, vacuum degassed, filled by sedimentation by vibration, dried at 100 [° C.], and the dried product is baked at 1000 [° C.]. A porous body was formed (see FIG. 5A).
当該多孔質体の表面がダイヤモンド砥石により研削され、径φ９９［ｍｍ］の中央載置部２１と、内径φ１２５［ｍｍ］および外径φ１４９［ｍｍ］の環状載置部２３を残すように、溝２０２および２０４が形成された（図５（ｂ）参照）。この際、側面（第２接合界面Ｐ２を構成する。）の少なくとも底面（第１接合界面Ｐ１を構成する。）に対する連続箇所または下端部における曲率半径が６．０［ｍｍ］になるように、溝２０２および２０４のそれぞれの形状が調整された（図４（ａ）（ｂ）参照）。底面から徐々に高くなるような上り斜面（上り勾配曲面）により側面が構成されている。 The surface of the porous body is ground with a diamond grindstone to leave a central mounting portion 21 having a diameter φ99 [mm] and an annular mounting portion 23 having an inner diameter φ125 [mm] and an outer diameter φ149 [mm]. 202 and 204 were formed (see FIG. 5B). At this time, the curvature radius at the continuous portion or the lower end of at least the bottom surface (which constitutes the first bonding interface P1) of the side surface (which constitutes the second joining interface P2) is 6.0 [mm]. The shape of each of the grooves 202 and 204 was adjusted (see FIGS. 4A and 4B). The side surface is constituted by an upward slope (upward slope curved surface) that gradually increases from the bottom surface.
曲率半径ｒを有する側面の傾斜角度θ（図４（ａ）（ｂ）参照）は、側面および底面の連続点と、側面の曲率中心から底面に下ろした垂線の足との径方向間隔ｄ（＜ｒ）に基づき、ａｒｃｓｉｎ（ｄ／ｒ）にしたがって定義される。たとえばｒ＝６．０［ｍｍ］、ｄ＝３．０［ｍｍ］である場合はθ＝３０°であり、ｒ＝６．０［ｍｍ］、ｄ＝２．０［ｍｍ］である場合はθ＝１９．３°である。 The inclination angle θ of the side surface having the radius of curvature r (see FIGS. 4A and 4B) is the radial distance d between the continuity point of the side surface and the bottom surface and the leg of the perpendicular extending from the center of curvature of the side surface to the bottom surface. Based on <r), defined according to arcsin (d / r). For example, when r = 6.0 [mm] and d = 3.0 [mm], θ = 30 °, and when r = 6.0 [mm] and d = 2.0 [mm] θ = 19.3 °.
側面が全体的に同一の曲率半径ｒを有するように形成されている場合、側面の上端における底面に対する傾斜角度φは、当該側面の高さ、すなわち、載置部２１〜２３の高さｈ（＜ｒ）に基づき、ａｒｃｃｏｓ（１−（ｈ／ｒ））にしたがって定義される。たとえばｒ＝６．０［ｍｍ］、ｈ＝３．０［ｍｍ］である場合はθ＝６０°であり、ｒ＝６．０［ｍｍ］、ｈ＝５．０［ｍｍ］である場合はθ＝７１．７°である。 When the side surfaces are formed so as to have the same radius of curvature r as a whole, the inclination angle φ with respect to the bottom surface at the upper end of the side surface is the height of the side surface, that is, the height h of the mounting portions 21 to 23 ( Based on <r), it is defined according to arccos (1- (h / r)). For example, when r = 6.0 [mm] and h = 3.0 [mm], θ = 60 °, and when r = 6.0 [mm] and h = 5.0 [mm] θ = 71.7 °.
溝２０２および２０４の底面のうち少なくとも第１接合界面Ｐ１を構成する緻密質体の表面粗さＲａが３．２［μｍ］に調整された。 Of the bottom surfaces of the grooves 202 and 204, the surface roughness Ra of the dense body constituting at least the first bonding interface P1 was adjusted to 3.2 [μm].
溝２０２および２０４において被溶射面である側面および当該側面に対する底面の連続箇所に向かって、アルミナ粉末（純度９９．９％、平均粒径３０［μｍ］）がプラズマ溶射されることにより厚さ０．５［ｍｍ］のセラミックス溶射膜３０１〜３０３が形成された（図５（ｃ）参照）。溶射出力は５０［ｋＷ］に制御され、溶射雰囲気はアルゴンおよび水素の混合雰囲気に制御され、ガン変位速度は３００［ｍｍ／ｓ］に制御された。 Alumina powder (purity 99.9%, average particle size 30 [μm]) is plasma sprayed toward the side surface which is the sprayed surface in the grooves 202 and 204 and the continuous portion of the bottom surface with respect to the side surface, thereby reducing the thickness to 0 5 [mm] ceramic sprayed films 301 to 303 were formed (see FIG. 5C). The spraying output was controlled to 50 [kW], the spraying atmosphere was controlled to a mixed atmosphere of argon and hydrogen, and the gun displacement rate was controlled to 300 [mm / s].
次に第１のスラリーと同一配合の第２のスラリーが溝に注入され、１００［℃］で乾燥された上で、当該乾燥物が１０００［℃］で焼成されることにより載置部２２および２４に相当する多孔質体が形成された（図５（ｄ）参照）。そして、載置面１００の平坦度が１．０［μｍ］未満となるように研削加工が施され、最終的に厚さ３０［ｍｍ］の実施例１の真空吸着装置が作製された。 Next, a second slurry having the same composition as the first slurry is poured into the groove and dried at 100 [° C.], and then the dried product is baked at 1000 [° C.], whereby the mounting portion 22 and A porous body corresponding to 24 was formed (see FIG. 5D). Then, grinding was performed so that the flatness of the mounting surface 100 was less than 1.0 [μm], and finally the vacuum suction device of Example 1 having a thickness of 30 [mm] was manufactured.
（実施例２）
第１接合界面Ｐ１に対する連続箇所における第２接合界面Ｐ２の曲率半径が５．０［ｍｍ］になるように溝２０２，２０４が形成され、溝２０２および２０４の底面のうち少なくとも第１接合界面Ｐ１を構成する部分の表面粗さＲａが３．１［μｍ］に調節されたほかは、実施例１と同様の条件下で実施例２の真空吸着装置が作製された。
(Example 2)
Grooves 202 and 204 are formed so that the radius of curvature of the second bonding interface P2 at the continuous portion with respect to the first bonding interface P1 is 5.0 [mm], and at least the first bonding interface P1 of the bottom surfaces of the grooves 202 and 204 is formed. The vacuum suction device of Example 2 was manufactured under the same conditions as in Example 1 except that the surface roughness Ra of the part constituting the substrate was adjusted to 3.1 [μm].
（実施例３）
第１接合界面Ｐ１に対する連続箇所における第２接合界面Ｐ２の曲率半径が４．０［ｍｍ］になるように溝２０２，２０４が形成されたほかは、実施例１と同様の条件下で実施例３の真空吸着装置が作製された。
Example 3
The embodiment was performed under the same conditions as in Example 1 except that the grooves 202 and 204 were formed so that the radius of curvature of the second bonding interface P2 at the continuous portion with respect to the first bonding interface P1 was 4.0 [mm]. 3 vacuum suction devices were produced.
（実施例４）
第１接合界面Ｐ１に対する連続箇所における第２接合界面Ｐ２の曲率半径が３．０［ｍｍ］になるように溝２０２，２０４が形成され、溝２０２および２０４の底面のうち少なくとも第１接合界面Ｐ１を構成する部分の表面粗さＲａが３．０［μｍ］に調節されたほかは、実施例１と同様の条件下で実施例４の真空吸着装置が作製された。
Example 4
Grooves 202 and 204 are formed so that the radius of curvature of the second joint interface P2 at the continuous portion with respect to the first joint interface P1 is 3.0 [mm], and at least the first joint interface P1 is the bottom of the grooves 202 and 204. The vacuum suction device of Example 4 was fabricated under the same conditions as in Example 1 except that the surface roughness Ra of the part constituting the substrate was adjusted to 3.0 [μm].
（実施例５）
第１接合界面Ｐ１に対する連続箇所における第２接合界面Ｐ２の曲率半径が２．０［ｍｍ］になるように溝２０２，２０４が形成され、溝２０２および２０４の底面のうち少なくとも第１接合界面Ｐ１を構成する部分の表面粗さＲａが３．５［μｍ］に調節されたほかは、実施例１と同様の条件下で実施例５の真空吸着装置が作製された。
(Example 5)
Grooves 202 and 204 are formed so that the radius of curvature of the second joint interface P2 at the continuous portion with respect to the first joint interface P1 is 2.0 [mm], and at least the first joint interface P1 of the bottom surfaces of the grooves 202 and 204 is formed. The vacuum suction device of Example 5 was manufactured under the same conditions as in Example 1 except that the surface roughness Ra of the portion constituting the film was adjusted to 3.5 [μm].
（実施例６）
第１接合界面Ｐ１に対する連続箇所における第２接合界面Ｐ２の曲率半径が１．０［ｍｍ］になるように溝２０２，２０４が形成され、溝２０２および２０４の底面のうち少なくとも第１接合界面Ｐ１を構成する部分の表面粗さＲａが３．４［μｍ］に調節されたほかは、実施例１と同様の条件下で実施例６の真空吸着装置が作製された。
(Example 6)
Grooves 202 and 204 are formed so that the radius of curvature of the second joint interface P2 at the continuous portion with respect to the first joint interface P1 is 1.0 [mm], and at least the first joint interface P1 is the bottom of the grooves 202 and 204. The vacuum suction device of Example 6 was fabricated under the same conditions as in Example 1 except that the surface roughness Ra of the portion constituting the film was adjusted to 3.4 [μm].
（実施例７）
溝２０２および２０４の底面のうち少なくとも第１接合界面Ｐ１を構成する部分の表面粗さＲａが４．９［μｍ］に調節されたほかは、実施例1と同様の条件下で実施例７の真空吸着装置が作製された。
(Example 7)
Except that the surface roughness Ra of the bottom surface of the grooves 202 and 204 constituting at least the first bonding interface P1 is adjusted to 4.9 [μm], the conditions of the seventh embodiment are the same as in the first embodiment. A vacuum suction device was produced.
（実施例８）
溝２０２および２０４の底面のうち少なくとも第１接合界面Ｐ１を構成する部分の表面粗さが４．８［μｍ］に調節されたほかは、実施例２と同様の条件下で実施例８の真空吸着装置が作製された。
(Example 8)
The vacuum of Example 8 was used under the same conditions as in Example 2 except that the surface roughness of at least the portion constituting the first bonding interface P1 of the bottom surfaces of the grooves 202 and 204 was adjusted to 4.8 [μm]. An adsorption device was fabricated.
（実施例９）
溝２０２および２０４の底面のうち少なくとも第１接合界面Ｐ１を構成する部分の表面粗さが４．８［μｍ］に調節されたほかは、実施例３と同様の条件下で実施例９の真空吸着装置が作製された。
Example 9
The vacuum of Example 9 was used under the same conditions as in Example 3 except that the surface roughness of at least the portion constituting the first bonding interface P1 of the bottom surfaces of the grooves 202 and 204 was adjusted to 4.8 [μm]. An adsorption device was fabricated.
（実施例１０）
溝２０２および２０４の底面のうち少なくとも第１接合界面Ｐ１を構成する部分の表面粗さが４．８［μｍ］に調節されたほかは、実施例４と同様の条件下で実施例１０の真空吸着装置が作製された。
(Example 10)
The vacuum of Example 10 was used under the same conditions as in Example 4 except that the surface roughness of at least the portion constituting the first bonding interface P1 of the bottom surfaces of the grooves 202 and 204 was adjusted to 4.8 [μm]. An adsorption device was fabricated.
（実施例１１）
溝２０２および２０４の底面のうち少なくとも第１接合界面Ｐ１を構成する部分の表面粗さが５．０［μｍ］に調節されたほかは、実施例５と同様の条件下で実施例１１の真空吸着装置が作製された。
(Example 11)
The vacuum of Example 11 is used under the same conditions as in Example 5 except that the surface roughness of at least the portion constituting the first bonding interface P1 of the bottom surfaces of the grooves 202 and 204 is adjusted to 5.0 [μm]. An adsorption device was fabricated.
（実施例１２）
溝２０２および２０４の底面のうち少なくとも第１接合界面Ｐ１を構成する部分の表面粗さが５．０［μｍ］に調節されたほかは、実施例６と同様の条件下で実施例１２の真空吸着装置が作製された。
(Example 12)
The vacuum of Example 12 under the same conditions as in Example 6 except that the surface roughness of at least the portion constituting the first bonding interface P1 in the bottom surfaces of the grooves 202 and 204 was adjusted to 5.0 [μm]. An adsorption device was fabricated.
（実施例１３）
第１接合界面Ｐ１に対する連続箇所における第２接合界面Ｐ２の曲率半径が５．５［ｍｍ］になるように溝２０２，２０４が形成され、溝２０２および２０４の底面のうち少なくとも第１接合界面Ｐ１を構成する部分の表面粗さＲａが３．８［μｍ］に調節されたほかは、実施例１と同様の条件下で実施例１３の真空吸着装置が作製された。
(Example 13)
Grooves 202 and 204 are formed so that the radius of curvature of the second bonding interface P2 at the continuous portion with respect to the first bonding interface P1 is 5.5 [mm], and at least the first bonding interface P1 among the bottom surfaces of the grooves 202 and 204 is formed. A vacuum suction device of Example 13 was fabricated under the same conditions as in Example 1 except that the surface roughness Ra of the portion constituting the film was adjusted to 3.8 [μm].
（実施例１４）
第１接合界面Ｐ１に対する連続箇所における第２接合界面Ｐ２の曲率半径が２．５［ｍｍ］になるように溝２０２，２０４が形成され、溝２０２および２０４の底面のうち少なくとも第１接合界面Ｐ１を構成する部分の表面粗さＲａが３．２［μｍ］に調節されたほかは、実施例１と同様の条件下で実施例１４の真空吸着装置が作製された。
(Example 14)
Grooves 202 and 204 are formed so that the radius of curvature of the second bonding interface P2 at the continuous portion with respect to the first bonding interface P1 is 2.5 [mm], and at least the first bonding interface P1 is the bottom of the grooves 202 and 204. The vacuum suction device of Example 14 was manufactured under the same conditions as in Example 1 except that the surface roughness Ra of the portion constituting the film was adjusted to 3.2 [μm].
（実施例１５）
第１接合界面Ｐ１に対する連続箇所における第２接合界面Ｐ２の曲率半径が３．５［ｍｍ］になるように溝２０２，２０４が形成され、溝２０２および２０４の底面のうち少なくとも第１接合界面Ｐ１を構成する部分の表面粗さＲａが４．０［μｍ］に調節されたほかは、実施例１と同様の条件下で実施例１５の真空吸着装置が作製された。
(Example 15)
Grooves 202 and 204 are formed so that the radius of curvature of the second joint interface P2 at the continuous portion with respect to the first joint interface P1 is 3.5 [mm], and at least the first joint interface P1 of the bottom surfaces of the grooves 202 and 204 is formed. The vacuum suction device of Example 15 was manufactured under the same conditions as in Example 1 except that the surface roughness Ra of the portion constituting the film was adjusted to 4.0 [μm].
（実施例１６）
第１接合界面Ｐ１に対する連続箇所における第２接合界面Ｐ２の曲率半径が１．５［ｍｍ］になるように溝２０２，２０４が形成され、溝２０２および２０４の底面のうち少なくとも第１接合界面Ｐ１を構成する部分の表面粗さＲａが４．６［μｍ］に調節されたほかは、実施例１と同様の条件下で実施例１６の真空吸着装置が作製された。
(Example 16)
Grooves 202 and 204 are formed so that the radius of curvature of the second bonding interface P2 at the continuous portion with respect to the first bonding interface P1 is 1.5 [mm], and at least the first bonding interface P1 is the bottom of the grooves 202 and 204. The vacuum suction device of Example 16 was fabricated under the same conditions as in Example 1 except that the surface roughness Ra of the portion constituting the film was adjusted to 4.6 [μm].
（実施例１７）
第１接合界面Ｐ１に対する連続箇所における第２接合界面Ｐ２の曲率半径が４．５［ｍｍ］になるように溝２０２，２０４が形成され、溝２０２および２０４の底面のうち少なくとも第１接合界面Ｐ１を構成する部分の表面粗さＲａが３．８［μｍ］に調節されたほかは、実施例１と同様の条件下で実施例１７の真空吸着装置が作製された。
(Example 17)
Grooves 202 and 204 are formed such that the radius of curvature of the second bonding interface P2 at the continuous portion with respect to the first bonding interface P1 is 4.5 [mm], and at least the first bonding interface P1 of the bottom surfaces of the grooves 202 and 204 is formed. The vacuum suction device of Example 17 was manufactured under the same conditions as in Example 1 except that the surface roughness Ra of the portion constituting the film was adjusted to 3.8 [μm].
（実施例１８）
第１接合界面Ｐ１に対する連続箇所における第２接合界面Ｐ２の曲率半径が２．５［ｍｍ］になるように溝２０２，２０４が形成され、溝２０２および２０４の底面のうち少なくとも第１接合界面Ｐ１を構成する部分の表面粗さＲａが４．６［μｍ］に調節されたほかは、実施例１と同様の条件下で実施例１８の真空吸着装置が作製された。
(Example 18)
Grooves 202 and 204 are formed so that the radius of curvature of the second bonding interface P2 at the continuous portion with respect to the first bonding interface P1 is 2.5 [mm], and at least the first bonding interface P1 is the bottom of the grooves 202 and 204. The vacuum suction device of Example 18 was fabricated under the same conditions as in Example 1 except that the surface roughness Ra of the portion constituting was adjusted to 4.6 [μm].
（比較例１）
第２接合界面Ｐ２が、第１接合界面Ｐ１（水平面）に対して垂直に連続する円環状（上面視）の鉛直面（曲率半径が０）になるように形成され、第１接合界面Ｐ１の表面粗さＲａが５．０［μｍ］になるように調節されたほかは、実施例１と同様の条件下で比較例１の真空吸着装置が作製された（図６参照）。
(Comparative Example 1)
The second bonding interface P2 is formed to be an annular (top view) vertical surface (with a radius of curvature of 0) continuous perpendicular to the first bonding interface P1 (horizontal plane). A vacuum suction device of Comparative Example 1 was fabricated under the same conditions as in Example 1 except that the surface roughness Ra was adjusted to 5.0 [μm] (see FIG. 6).
（比較例２）
第２接合界面Ｐ２が、第１接合界面Ｐ１（水平面）に対して垂直に連続する円環状（上面視）の鉛直面（曲率半径が０）になるように形成されたほかは、実施例１と同様の条件下で比較例２の真空吸着装置が作製された。
(Comparative Example 2)
Example 1 except that the second bonding interface P2 is formed to be an annular (viewed from above) vertical surface (with a radius of curvature of 0) that is perpendicular to the first bonding interface P1 (horizontal plane). A vacuum suction device of Comparative Example 2 was produced under the same conditions as those described above.
（評価方法）
実施例および比較例の真空吸着装置のそれぞれについて、φ５インチのシリコンウエハを吸着させたときの真空度（ゲージ圧）が測定されることにより真空吸着性能が評価された。当該評価結果が各真空吸着装置の特徴量とともに表１に示されている。
(Evaluation method)
About each of the vacuum suction apparatus of an Example and a comparative example, vacuum suction performance was evaluated by measuring the degree of vacuum (gauge pressure) when a 5 inch silicon wafer was sucked. The evaluation results are shown in Table 1 together with the feature amounts of the respective vacuum suction devices.
表１から次のことがわかる。 Table 1 shows the following.
第１接合界面Ｐ１に対する連続箇所における第２接合界面Ｐ２の曲率半径が１．０〜６．０［ｍｍ］の範囲に含まれる実施例１〜１８の真空吸着装置は、当該曲率半径が当該範囲から外れている比較例１〜２の真空吸着装置よりも吸着性能が高い。観察の結果、比較例１〜２の真空吸着装置において、図６に示されているように、隔壁部３１（３２，３３）が、緻密質体１０の端面（横破線参照）および多孔質体２１（２３）の端面（縦破線）の垂直な連続箇所（角部）において局所的に両端面から浮き上がっていることが確認された。これは、前記のように、多孔質体（第１スラリー由来）２１（２３）および緻密質体１０のそれぞれに対するセラミックス溶射膜３０１（３０２、３０３）の密着力が相違することに起因していると考えられる。 In the vacuum suction devices of Examples 1 to 18 in which the radius of curvature of the second bonding interface P2 at the continuous portion with respect to the first bonding interface P1 is included in the range of 1.0 to 6.0 [mm], the curvature radius is within the range. The adsorption performance is higher than the vacuum adsorption devices of Comparative Examples 1 and 2 that are not included. As a result of the observation, in the vacuum suction devices of Comparative Examples 1 and 2, as shown in FIG. 6, the partition walls 31 (32, 33) are the end surface of the dense body 10 (see the horizontal broken line) and the porous body. It was confirmed that 21 (23) was lifted locally from both end faces at a vertical continuous portion (corner portion) of the end face (vertical broken line). As described above, this is because the adhesion of the ceramic sprayed films 301 (302, 303) to the porous body (derived from the first slurry) 21 (23) and the dense body 10 is different. it is conceivable that.
第２接合界面Ｐ２に対する連続箇所における第１接合界面Ｐ１の表面粗さＲａが３．８〜５．０［μｍ］の範囲に含まれる実施例７〜１３，１５〜１８の真空吸着装置は、実施例１〜６の真空吸着装置よりも吸着性能が高い。 The vacuum suction devices of Examples 7 to 13 and 15 to 18 in which the surface roughness Ra of the first bonding interface P1 at the continuous portion with respect to the second bonding interface P2 is included in the range of 3.8 to 5.0 [μm]. Adsorption performance is higher than the vacuum adsorption apparatus of Examples 1-6.
１０‥支持部、１１‥吸引溝、１２‥吸引孔、２１‥中央載置部、２２〜２４‥環状載置部、３１〜３３‥隔壁部、２０２、２０４‥環状溝、３０１〜３０３‥セラミックス溶射膜、Ｐ１‥第１接合界面、Ｐ２‥第２接合界面。 DESCRIPTION OF SYMBOLS 10 ... Support part, 11 ... Suction groove, 12 ... Suction hole, 21 ... Center mounting part, 22-24 ... Annular mounting part, 31-33 ... Partition part, 202, 204 ... Annular groove, 301-303 Ceramics Thermal sprayed film, P1... First bonding interface, P2.
Claims (5)
前記複数の載置部の間に配置されているセラミックス溶射膜により形成されている一または複数の環状の隔壁部と、
被吸着物が載置される載置面を構成する上端面を露出させた状態の前記複数の載置部および前記一または複数の隔壁部のそれぞれを支持するように構成され、前記載置部の気孔に連通する吸引孔を有するセラミックス緻密質体からなる支持部と、を備え、
前記セラミックス緻密質体、前記セラミックス／ガラス複合多孔質体および前記セラミックス溶射膜が相互に直接的に接合されることにより構成されている真空吸着装置であって、
前記セラミックス／ガラス複合多孔質体と前記セラミックス溶射膜との接合界面である第２接合界面のうち少なくとも下端部が、前記セラミックス緻密質体と前記セラミックス溶射膜との接合界面である第１接合界面に対して鋭角をなして上方に連続する上り斜面により構成されていることを特徴とする真空吸着装置。 A plurality of mounting portions made of a ceramic / glass composite porous body, including a central mounting portion and one or a plurality of annular mounting portions arranged so as to surround the single or multiple annularly;
One or a plurality of annular partition walls formed by a ceramic sprayed film disposed between the plurality of mounting portions;
The mounting unit is configured to support each of the plurality of mounting units and the one or the plurality of partition walls in a state in which an upper end surface constituting a mounting surface on which an object to be adsorbed is mounted is exposed. Comprising a ceramic dense body having a suction hole communicating with the pores of
A vacuum suction apparatus configured by directly bonding the ceramic dense body, the ceramic / glass composite porous body, and the ceramic sprayed film to each other;
A first bonding interface in which at least a lower end portion of the second bonding interface that is a bonding interface between the ceramic / glass composite porous body and the ceramic sprayed film is a bonding interface between the ceramic dense body and the ceramic sprayed film. A vacuum suction device characterized in that the vacuum suction device is formed by an upward slope that forms an acute angle with respect to the upper surface.
前記第２接合界面のうち少なくとも下端部が、前記第１接合界面との連続箇所から傾斜度が徐々に高くなるような上り斜面により構成されていることを特徴とする真空吸着装置。 The vacuum suction apparatus according to claim 1,
The vacuum suction device, wherein at least a lower end portion of the second bonding interface is configured by an ascending slope whose slope gradually increases from a continuous portion with the first bonding interface.
前記支持部を構成する、凹部および前記凹部に連通する前記吸引孔を有するセラミックス緻密質体を作製する工程と、
セラミックス粉末と第１のガラスの粉末とを含む第１のスラリーを調製する工程と、
前記第１のスラリーを前記セラミックス緻密質体の前記凹部に充填したうえで、前記第１のガラスの軟化点以上の温度で焼成してセラミックス／ガラス複合多孔質体を形成する工程と、
前記セラミックス／ガラス複合多孔質体、または前記セラミックス／ガラス複合多孔質体および前記セラミックス緻密質体に加工を施すことにより、前記複数の載置部のうち内側から奇数番目または偶数番目の載置部に相当する領域を除いて、前記セラミックス緻密質体が露出している底面と、前記セラミックス／ガラス複合多孔質体が露出している環状の側面とを有する溝または穴を形成する工程と、
前記溝または穴の前記側面にセラミックスを溶射することにより前記隔壁部を構成するセラミックス溶射膜を形成する工程と、
セラミックス粉末と第２のガラスの粉末とを含む第２のスラリーを調製する工程と、
前記第２のスラリーを前記側面に前記セラミックス溶射膜が形成されている前記溝または穴に充填し、前記第２のガラスの軟化点以上の温度で焼成して、セラミックス／ガラス複合多孔質体からなる、前記複数の載置部のうち内側から偶数番目または奇数番目の載置部を形成する工程と、を含み、
前記底面が平面により構成され、かつ、前記側面のうち少なくとも下端部が当該平面に対して鋭角をなして上方に連続する面により構成されるように、前記溝または穴を形成することを特徴とする方法。 It is a manufacturing method of the vacuum suction device according to claim 1,
Forming the ceramic dense body having the concave portion and the suction hole communicating with the concave portion, constituting the support portion;
Preparing a first slurry containing ceramic powder and first glass powder;
Filling the concave portion of the ceramic dense body with the first slurry and then firing at a temperature equal to or higher than the softening point of the first glass to form a ceramic / glass composite porous body;
The ceramic / glass composite porous body, or the ceramic / glass composite porous body and the ceramic dense body are processed to form odd-numbered or even-numbered mounting portions from the inside of the plurality of mounting portions. Forming a groove or a hole having a bottom surface where the ceramic dense body is exposed and an annular side surface where the ceramic / glass composite porous body is exposed, except for a region corresponding to
Forming a ceramic sprayed coating constituting the partition wall by spraying ceramic on the side surface of the groove or hole; and
Preparing a second slurry comprising ceramic powder and second glass powder;
From the ceramic / glass composite porous body, the second slurry is filled in the groove or hole in which the ceramic sprayed film is formed on the side surface and fired at a temperature equal to or higher than the softening point of the second glass. The step of forming an even-numbered or odd-numbered mounting portion from the inside of the plurality of mounting portions,
The groove or the hole is formed so that the bottom surface is constituted by a flat surface, and at least the lower end portion of the side surface is constituted by a surface that forms an acute angle with respect to the flat surface and continues upward. how to.
前記底面から傾斜度が徐々に高くなるような上り斜面により前記側面のうち少なくとも下端部が構成されるように、前記溝または穴を形成することを特徴とする方法。 The method of claim 3, wherein
The method is characterized in that the groove or the hole is formed so that at least a lower end portion of the side surface is constituted by an ascending slope whose slope gradually increases from the bottom surface.
前記環状の溝または穴の前記底面を、その表面粗さＲａが３．０〜５．０［μｍ］の範囲に収まるように加工することを特徴とする方法。 The method according to claim 3 or 4, wherein
A method of processing the bottom surface of the annular groove or hole so that the surface roughness Ra falls within a range of 3.0 to 5.0 [μm].
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