JP2015008183A - プラズマ処理方法および真空処理装置 - Google Patents
プラズマ処理方法および真空処理装置 Download PDFInfo
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- JP2015008183A JP2015008183A JP2013132210A JP2013132210A JP2015008183A JP 2015008183 A JP2015008183 A JP 2015008183A JP 2013132210 A JP2013132210 A JP 2013132210A JP 2013132210 A JP2013132210 A JP 2013132210A JP 2015008183 A JP2015008183 A JP 2015008183A
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- 238000012545 processing Methods 0.000 title claims abstract description 61
- 238000003672 processing method Methods 0.000 title claims abstract description 24
- 239000007789 gas Substances 0.000 claims abstract description 66
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 29
- 150000002367 halogens Chemical class 0.000 claims abstract description 29
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 27
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910001882 dioxygen Inorganic materials 0.000 claims abstract description 19
- 229910001873 dinitrogen Inorganic materials 0.000 claims abstract description 16
- 239000011261 inert gas Substances 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 11
- 230000003647 oxidation Effects 0.000 claims abstract description 10
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 10
- 238000012805 post-processing Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 10
- 238000009832 plasma treatment Methods 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000010453 quartz Substances 0.000 claims description 4
- 230000007704 transition Effects 0.000 claims description 3
- 239000007769 metal material Substances 0.000 abstract description 10
- 238000001020 plasma etching Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 17
- 238000012546 transfer Methods 0.000 description 15
- 239000000460 chlorine Substances 0.000 description 13
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 239000001301 oxygen Substances 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 6
- 229910052801 chlorine Inorganic materials 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 229910052794 bromium Inorganic materials 0.000 description 4
- 239000007795 chemical reaction product Substances 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 3
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 3
- 238000010790 dilution Methods 0.000 description 3
- 239000012895 dilution Substances 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000010301 surface-oxidation reaction Methods 0.000 description 3
- 238000004380 ashing Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000007865 diluting Methods 0.000 description 2
- 230000008034 disappearance Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QOHUADYMMOUSQA-UHFFFAOYSA-N [Br-].Br[NH+](Br)Br Chemical compound [Br-].Br[NH+](Br)Br QOHUADYMMOUSQA-UHFFFAOYSA-N 0.000 description 1
- -1 ammonium halide Chemical class 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 150000002829 nitrogen Chemical class 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
Abstract
【解決手段】本発明は、金属を含有する膜を有する試料をプラズマ処理するプラズマ処理方法において、ハロゲン含有ガスと窒素ガスとの混合ガスを用いて前記試料をプラズマ処理し、前記プラズマ処理された試料が後処理される後処理室と異なるプラズマ生成室にて酸素ガスと不活性ガスとの混合ガスによりプラズマを生成し、前記プラズマ生成室と前記後処理室の間に配置された輸送経路を介して前記生成されたプラズマを後処理室に輸送しながら前記試料を後処理することを特徴とする。
【選択図】図2
Description
101…真空側ブロック
102…大気側ブロック
103(a)、103(b)…真空処理室
104(a)、104(b)…プラズマ後処理室
105…ロードロック室
106…アンロードロック室
107…真空搬送ロボット
108…大気搬送容器
109…大気搬送ロボット
110(a)、110(b)、110(c)…ウェハカセット
111…アライメントユニット
112…真空搬送容器
113…リモートプラズマ装置
114…試料
201…真空容器
202…試料台
203…シャワープレート
204…排気装置
205…可動弁
206…ガスディフューザ
207…ベント用バルブ
208…レギュレータ
209…ベント用ガス
210…マスフローコントローラ
211…ガスバルブ
212…プロセスガス供給装置
220…大気側ゲートバルブ
221…真空側ゲートバルブ
Claims (8)
- 金属を含有する膜を有する試料をプラズマ処理するプラズマ処理方法において、
ハロゲン含有ガスと窒素ガスとの混合ガスを用いて前記試料をプラズマ処理し、
前記プラズマ処理された試料が後処理される後処理室と異なるプラズマ生成室にて酸素ガスと不活性ガスとの混合ガスによりプラズマを生成し、
前記プラズマ生成室と前記後処理室の間に配置された輸送経路を介して前記生成されたプラズマを後処理室に輸送しながら前記試料を後処理することを特徴とするプラズマ処理方法。 - 請求項1に記載のプラズマ処理方法において、
前記酸素ガスと不活性ガスとの混合ガスに対する前記酸素ガスの割合は、前記金属の酸化を抑制できる割合であることを特徴とするプラズマ処理方法。 - 請求項2に記載のプラズマ処理方法において、
前記酸素ガスと不活性ガスとの混合ガスに対する前記酸素ガスの割合は、1%から10%の範囲の割合であることを特徴とするプラズマ処理方法。 - 請求項1に記載のプラズマ処理方法において、
前記後処理をリモートプラズマ装置を用いて行うことを特徴とするプラズマ処理方法。 - 請求項1に記載のプラズマ処理方法において、
前記不活性ガスは窒素ガスであることを特徴とするプラズマ処理方法。 - 請求項1に記載のプラズマ処理方法において、
前記後処理する時の処理温度を20℃から前記試料の材質固有の転移温度までの範囲内の温度とすることを特徴とするプラズマ処理方法。 - 試料をプラズマ処理するプラズマ処理室と、前記プラズマ処理された試料を大気側に搬出するアンロードロック室と、前記プラズマ処理室と前記アンロードロック室と異なるプラズマ生成室にてプラズマを生成するリモートプラズマ装置とを備える真空処理装置において、
前記アンロードロック室は、前記リモートプラズマ装置を具備するとともに前記プラズマ処理された試料に後処理を行うことを特徴とする真空処理装置。 - 請求項7に記載のプラズマ真空装置において、
前記アンロードロック室は、前記プラズマ生成室にて生成されたプラズマを輸送する輸送経路を具備し、
前記輸送経路の材質は、石英または、表面を酸化処理されたアルミであることを特徴とする真空処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013132210A JP6165518B2 (ja) | 2013-06-25 | 2013-06-25 | プラズマ処理方法および真空処理装置 |
TW102148437A TWI532098B (zh) | 2013-06-25 | 2013-12-26 | A plasma processing method and a vacuum processing apparatus |
TW105103764A TWI612580B (zh) | 2013-06-25 | 2013-12-26 | 電漿處理方法 |
KR1020140013251A KR101572592B1 (ko) | 2013-06-25 | 2014-02-05 | 플라즈마 처리 방법 및 진공 처리 장치 |
US14/180,552 US20140377958A1 (en) | 2013-06-25 | 2014-02-14 | Plasma processing method and vacuum processing apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013132210A JP6165518B2 (ja) | 2013-06-25 | 2013-06-25 | プラズマ処理方法および真空処理装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2015008183A true JP2015008183A (ja) | 2015-01-15 |
JP2015008183A5 JP2015008183A5 (ja) | 2016-02-12 |
JP6165518B2 JP6165518B2 (ja) | 2017-07-19 |
Family
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Family Applications (1)
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JP2013132210A Active JP6165518B2 (ja) | 2013-06-25 | 2013-06-25 | プラズマ処理方法および真空処理装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20140377958A1 (ja) |
JP (1) | JP6165518B2 (ja) |
KR (1) | KR101572592B1 (ja) |
TW (2) | TWI532098B (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014133465A1 (en) * | 2013-02-28 | 2014-09-04 | Nanyang Technological University | A capacitively coupled electrodeless plasma apparatus and a method using capacitively coupled electrodeless plasma for processing a silicon substrate |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05129238A (ja) * | 1991-10-31 | 1993-05-25 | Fujitsu Ltd | 半導体製造装置 |
JPH09503103A (ja) * | 1994-02-03 | 1997-03-25 | アプライド マテリアルズ インコーポレイテッド | 半導体基板のストリッピング、パッシベーション及び腐食の抑制 |
JPH11330046A (ja) * | 1998-05-08 | 1999-11-30 | Mitsubishi Electric Corp | 半導体装置の製造方法及び半導体装置 |
JP2002222861A (ja) * | 2000-11-24 | 2002-08-09 | Samsung Electronics Co Ltd | プラズマ前処理モジュールを具備した装置における半導体素子の製造方法 |
JP2004514272A (ja) * | 2000-06-14 | 2004-05-13 | アプライド マテリアルズ インコーポレイテッド | 基板のクリーニング装置及び方法 |
JP2008235660A (ja) * | 2007-03-22 | 2008-10-02 | Tokyo Electron Ltd | アッシング方法及びその装置 |
JP2010056574A (ja) * | 2009-12-07 | 2010-03-11 | Nec Electronics Corp | 半導体装置の製造方法 |
JP2013526060A (ja) * | 2010-04-30 | 2013-06-20 | アプライド マテリアルズ インコーポレイテッド | チャンバにガスを放射状に分配するための装置及びその使用方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7374696B2 (en) * | 2003-02-14 | 2008-05-20 | Applied Materials, Inc. | Method and apparatus for removing a halogen-containing residue |
JP2006270030A (ja) | 2005-02-28 | 2006-10-05 | Tokyo Electron Ltd | プラズマ処理方法、および後処理方法 |
US20110304078A1 (en) * | 2010-06-14 | 2011-12-15 | Applied Materials, Inc. | Methods for removing byproducts from load lock chambers |
KR101895307B1 (ko) * | 2011-03-01 | 2018-10-04 | 어플라이드 머티어리얼스, 인코포레이티드 | 듀얼 로드락 구성의 저감 및 스트립 프로세스 챔버 |
CN105051861B (zh) * | 2013-03-15 | 2017-11-14 | 应用材料公司 | 适合于在电子器件制造中处理基板的处理***、设备及方法 |
US9355876B2 (en) * | 2013-03-15 | 2016-05-31 | Applied Materials, Inc. | Process load lock apparatus, lift assemblies, electronic device processing systems, and methods of processing substrates in load lock locations |
US20150064880A1 (en) * | 2013-08-30 | 2015-03-05 | Applied Materials, Inc. | Post etch treatment technology for enhancing plasma-etched silicon surface stability in ambient |
-
2013
- 2013-06-25 JP JP2013132210A patent/JP6165518B2/ja active Active
- 2013-12-26 TW TW102148437A patent/TWI532098B/zh active
- 2013-12-26 TW TW105103764A patent/TWI612580B/zh active
-
2014
- 2014-02-05 KR KR1020140013251A patent/KR101572592B1/ko active IP Right Grant
- 2014-02-14 US US14/180,552 patent/US20140377958A1/en not_active Abandoned
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05129238A (ja) * | 1991-10-31 | 1993-05-25 | Fujitsu Ltd | 半導体製造装置 |
JPH09503103A (ja) * | 1994-02-03 | 1997-03-25 | アプライド マテリアルズ インコーポレイテッド | 半導体基板のストリッピング、パッシベーション及び腐食の抑制 |
JPH11330046A (ja) * | 1998-05-08 | 1999-11-30 | Mitsubishi Electric Corp | 半導体装置の製造方法及び半導体装置 |
JP2004514272A (ja) * | 2000-06-14 | 2004-05-13 | アプライド マテリアルズ インコーポレイテッド | 基板のクリーニング装置及び方法 |
JP2002222861A (ja) * | 2000-11-24 | 2002-08-09 | Samsung Electronics Co Ltd | プラズマ前処理モジュールを具備した装置における半導体素子の製造方法 |
JP2008235660A (ja) * | 2007-03-22 | 2008-10-02 | Tokyo Electron Ltd | アッシング方法及びその装置 |
JP2010056574A (ja) * | 2009-12-07 | 2010-03-11 | Nec Electronics Corp | 半導体装置の製造方法 |
JP2013526060A (ja) * | 2010-04-30 | 2013-06-20 | アプライド マテリアルズ インコーポレイテッド | チャンバにガスを放射状に分配するための装置及びその使用方法 |
Also Published As
Publication number | Publication date |
---|---|
TW201501197A (zh) | 2015-01-01 |
TWI532098B (zh) | 2016-05-01 |
KR101572592B1 (ko) | 2015-11-27 |
KR20150000814A (ko) | 2015-01-05 |
US20140377958A1 (en) | 2014-12-25 |
TWI612580B (zh) | 2018-01-21 |
JP6165518B2 (ja) | 2017-07-19 |
TW201618183A (zh) | 2016-05-16 |
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