JP2014521527A - Memsキャビティ底からのシリコン残留物の消去 - Google Patents
Memsキャビティ底からのシリコン残留物の消去 Download PDFInfo
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- JP2014521527A JP2014521527A JP2014524104A JP2014524104A JP2014521527A JP 2014521527 A JP2014521527 A JP 2014521527A JP 2014524104 A JP2014524104 A JP 2014524104A JP 2014524104 A JP2014524104 A JP 2014524104A JP 2014521527 A JP2014521527 A JP 2014521527A
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- adhesion promoter
- switching element
- Prior art date
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 230000008030 elimination Effects 0.000 title 1
- 238000003379 elimination reaction Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 23
- 239000010703 silicon Substances 0.000 claims abstract description 23
- 238000000151 deposition Methods 0.000 claims abstract description 19
- 239000010410 layer Substances 0.000 claims description 129
- 238000000034 method Methods 0.000 claims description 35
- 238000004519 manufacturing process Methods 0.000 claims description 20
- 239000012790 adhesive layer Substances 0.000 claims description 19
- 238000005530 etching Methods 0.000 claims description 9
- 239000003989 dielectric material Substances 0.000 claims description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 5
- 239000011368 organic material Substances 0.000 claims 4
- 238000010292 electrical insulation Methods 0.000 claims 2
- 239000002318 adhesion promoter Substances 0.000 abstract description 72
- 239000000463 material Substances 0.000 abstract description 57
- 230000032798 delamination Effects 0.000 abstract description 2
- 239000004020 conductor Substances 0.000 description 13
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229920000265 Polyparaphenylene Polymers 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical class O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 150000001282 organosilanes Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000412 polyarylene Polymers 0.000 description 1
- -1 polyphenylene Polymers 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
- B81C1/00468—Releasing structures
- B81C1/00484—Processes for releasing structures not provided for in group B81C1/00476
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0002—Arrangements for avoiding sticking of the flexible or moving parts
- B81B3/0008—Structures for avoiding electrostatic attraction, e.g. avoiding charge accumulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/01—Switches
- B81B2201/012—Switches characterised by the shape
- B81B2201/014—Switches characterised by the shape having a cantilever fixed on one side connected to one or more dimples
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/01—Switches
- B81B2201/012—Switches characterised by the shape
- B81B2201/018—Switches not provided for in B81B2201/014 - B81B2201/016
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0118—Cantilevers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0102—Surface micromachining
- B81C2201/0105—Sacrificial layer
- B81C2201/0108—Sacrificial polymer, ashing of organics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
- H01H2001/0089—Providing protection of elements to be released by etching of sacrificial element; Avoiding stiction problems, e.g. of movable element to substrate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Micromachines (AREA)
Abstract
Description
Claims (21)
- MEMSデバイスを製造する方法であって、
キャビティ内に包囲される第1の部分及び上記キャビティ外に配置される第2の部分を有する基板上に、接着層を堆積することと、
上記第1の部分の上に配置された領域において上記接着層を除去することと、
上記接着層及び上記基板の第1の部分の上に犠牲層を堆積することと、
上記犠牲層の上にスイッチング素子を形成することと、
上記スイッチング素子を上記キャビティ内で包囲することと、
上記犠牲層を除去することとを含む方法。 - 上記接着層はケイ素を含む請求項1記載の方法。
- 上記犠牲層は誘電体材料を含む請求項2記載の方法。
- 上記誘電体材料は有機誘電体材料である請求項3記載の方法。
- 上記接着層を除去することは、
上記接着層の上にフォトレジスト層を堆積することと、
上記基板の第1の部分に対応する、上記フォトレジスト層の選択された領域を感光させることと、
上記フォトレジスト層を現像して、上記フォトレジスト層の選択された領域を除去し、これによりマスクを形成し、上記第1の部分の上に配置された領域における上記接着層を露出させることと、
上記露出した接着層をエッチングすることとを含む請求項1記載の方法。 - 上記接着層を堆積する前に、上記基板の上に電気絶縁層を堆積することをさらに含む請求項5記載の方法。
- 上記接着層は、有機材料に共有結合したケイ素を含む請求項1記載の方法。
- 第1の部分及び第2の部分を有する基板の上のMEMSデバイスを製造する方法であって、
上記基板の第1の部分の上に接着層を選択的に形成することと、
上記接着層及び上記基板の第2の部分の上に犠牲層を形成することと、
上記犠牲層及び上記基板の第2の部分の上にスイッチング素子を形成することと、
上記基板の第2の部分を少なくとも部分的に境界として有するキャビティによって上記スイッチング素子を包囲することと、
上記犠牲層を除去することとを含む方法。 - 上記接着層はケイ素を含む請求項8記載の方法。
- 上記犠牲層は誘電体材料を含む請求項9記載の方法。
- 上記誘電体材料は有機誘電体材料である請求項10記載の方法。
- 上記接着層を選択的に形成する前に、上記基板の上に電気絶縁層を堆積することをさらに含む請求項11記載の方法。
- 上記接着層を堆積する前に、上記基板の上に電気絶縁層を堆積することをさらに含む請求項8記載の方法。
- 上記接着層は、有機材料に共有結合したケイ素を含む請求項8記載の方法。
- キャビティを少なくとも部分的に境界として有する第1の部分及び上記キャビティ外に配置される第2の部分を有する基板と、
上記基板の第2の部分の上に配置され、上記第1の部分の上には配置されない接着層と、
上記キャビティ内に配置されたスイッチング素子とを備えるデバイス。 - 上記デバイスはMEMSデバイスである請求項15記載のデバイス。
- 上記接着層は、有機材料に共有結合したケイ素を含む請求項16記載のデバイス。
- 上記基板の上に配置された電気絶縁層をさらに備え、上記接着層は上記電気絶縁層の上に配置される請求項17記載のデバイス。
- 上記接着層は、有機材料に共有結合したケイ素を含む請求項15記載のデバイス。
- 上記基板の上に配置された誘電体層をさらに備え、上記接着層は誘電体層の上に配置される請求項15記載のデバイス。
- 上記スイッチング素子は、上記誘電体材料において少なくとも部分的にカプセル化される請求項15記載のデバイス。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161514823P | 2011-08-03 | 2011-08-03 | |
US61/514,823 | 2011-08-03 | ||
US13/565,693 | 2012-08-02 | ||
US13/565,693 US8921165B2 (en) | 2011-08-03 | 2012-08-02 | Elimination of silicon residues from MEMS cavity floor |
PCT/US2012/049497 WO2013020039A2 (en) | 2011-08-03 | 2012-08-03 | Elimination of silicon residues from mems cavity floor |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2014521527A true JP2014521527A (ja) | 2014-08-28 |
JP2014521527A5 JP2014521527A5 (ja) | 2015-07-30 |
JP6021914B2 JP6021914B2 (ja) | 2016-11-09 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2014524104A Active JP6021914B2 (ja) | 2011-08-03 | 2012-08-03 | Memsキャビティ底からのシリコン残留物の消去 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8921165B2 (ja) |
EP (1) | EP2739562B1 (ja) |
JP (1) | JP6021914B2 (ja) |
KR (1) | KR101937767B1 (ja) |
CN (1) | CN103732528B (ja) |
WO (1) | WO2013020039A2 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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EP3378086B1 (en) * | 2015-11-16 | 2021-07-21 | Cavendish Kinetics, Inc. | Current handling in legs and anchors of rf-switch |
GB2588926B (en) * | 2019-11-14 | 2022-01-26 | Memsstar Ltd | Method of manufacturing a microstructure |
EP3929540A1 (en) * | 2020-06-26 | 2021-12-29 | TE Connectivity Norge AS | Attachment system for attaching a sensor to a substrate, method of attaching a sensor to a substrate |
US11332364B1 (en) * | 2021-01-29 | 2022-05-17 | AAC Technologies Pte. Ltd. | Method for forming MEMS cavity structure |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US5652559A (en) * | 1993-12-20 | 1997-07-29 | General Electric Company | Method of micromachining electromagnetically actuated current switches with polyimide reinforcement seals, and switches produced thereby |
JP2005062815A (ja) * | 2003-08-18 | 2005-03-10 | Prime View Internatl Co Ltd | 光学干渉型ディスプレイパネルおよびその製造方法 |
JP2006231439A (ja) * | 2005-02-23 | 2006-09-07 | Sony Corp | 微小機械素子とその製造方法、半導体装置、ならびに通信装置 |
US7148436B1 (en) * | 2003-08-14 | 2006-12-12 | Sandia Corporation | Microelectromechanical acceleration-sensing apparatus |
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GB0011964D0 (en) * | 2000-05-18 | 2000-07-05 | Suyal N | Thick glass films with controlled refractive indices and their applications |
ATE360896T1 (de) * | 2001-04-19 | 2007-05-15 | Imec Inter Uni Micro Electr | Herstellung von integrierten abstimmbaren/umschaltbaren passiven mikro- und millimeterwellenmodulen |
US6798029B2 (en) * | 2003-05-09 | 2004-09-28 | International Business Machines Corporation | Method of fabricating micro-electromechanical switches on CMOS compatible substrates |
JP4807987B2 (ja) * | 2005-09-06 | 2011-11-02 | 日本電信電話株式会社 | 気密封止パッケージおよび光サブモジュール |
KR101424824B1 (ko) * | 2005-11-18 | 2014-08-01 | 레플리서러스 그룹 에스에이에스 | 다중 층 구조 형성 방법 |
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-
2012
- 2012-08-02 US US13/565,693 patent/US8921165B2/en active Active
- 2012-08-03 EP EP12746449.3A patent/EP2739562B1/en active Active
- 2012-08-03 JP JP2014524104A patent/JP6021914B2/ja active Active
- 2012-08-03 KR KR1020147005594A patent/KR101937767B1/ko active IP Right Grant
- 2012-08-03 CN CN201280038717.4A patent/CN103732528B/zh active Active
- 2012-08-03 WO PCT/US2012/049497 patent/WO2013020039A2/en active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US5652559A (en) * | 1993-12-20 | 1997-07-29 | General Electric Company | Method of micromachining electromagnetically actuated current switches with polyimide reinforcement seals, and switches produced thereby |
US7148436B1 (en) * | 2003-08-14 | 2006-12-12 | Sandia Corporation | Microelectromechanical acceleration-sensing apparatus |
JP2005062815A (ja) * | 2003-08-18 | 2005-03-10 | Prime View Internatl Co Ltd | 光学干渉型ディスプレイパネルおよびその製造方法 |
JP2006231439A (ja) * | 2005-02-23 | 2006-09-07 | Sony Corp | 微小機械素子とその製造方法、半導体装置、ならびに通信装置 |
Also Published As
Publication number | Publication date |
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KR20140053263A (ko) | 2014-05-07 |
EP2739562B1 (en) | 2017-12-20 |
WO2013020039A2 (en) | 2013-02-07 |
US20130032453A1 (en) | 2013-02-07 |
JP6021914B2 (ja) | 2016-11-09 |
CN103732528B (zh) | 2018-09-28 |
WO2013020039A3 (en) | 2013-03-21 |
KR101937767B1 (ko) | 2019-04-11 |
EP2739562A2 (en) | 2014-06-11 |
US8921165B2 (en) | 2014-12-30 |
CN103732528A (zh) | 2014-04-16 |
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