JP2014078575A - 半導体発光装置 - Google Patents
半導体発光装置 Download PDFInfo
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- 229910052710 silicon Inorganic materials 0.000 description 10
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 4
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- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
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- 230000003213 activating effect Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
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- 238000002513 implantation Methods 0.000 description 1
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- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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Abstract
【解決手段】主面上に発光領域と駆動装置領域が定義された半導体基板と、半導体基板の主面上に発光領域から駆動装置領域に渡って連続的に配置された、エピタキシャル成長された窒化物半導体からなるn型半導体層、活性層及びp型半導体層がこの順で積層された構造を有する積層体と、積層体上に配置された層間絶縁膜と、積層体の少なくとも一部及び層間絶縁膜を介して駆動装置領域の上方に配置され、積層体での発光を制御する制御トランジスタと、層間絶縁膜内で制御トランジスタと積層体との間に配置された遮光膜とを備える。
【選択図】図1
Description
図1では、積層体20の発光領域101上における膜厚が、駆動装置領域102上における膜厚よりも厚い例を示した。図1に示した構造によれば、発光領域101と駆動装置領域102における半導体発光装置1の高さを同等にすることができる。
10…半導体基板
11…シリコン基板
12…バッファ層
20…積層体
21…n型半導体層
22…活性層
23…p型半導体層
30…透明電極
40…層間絶縁膜
50…遮光膜
60…制御トランジスタ
61…npn構造
62…ゲート絶縁膜
63…ゲート領域
71…配線層
100…半導体発光素子
101…発光領域
102…駆動装置領域
111…アノード電極
112…カソード電極
601…ドレイン電極
602…ソース電極
603…ゲート電極
Claims (8)
- 主面上に発光領域と駆動装置領域が定義された半導体基板と、
前記半導体基板の前記主面上に前記発光領域から前記駆動装置領域に渡って連続的に配置された、エピタキシャル成長された窒化物半導体からなるn型半導体層、活性層及びp型半導体層がこの順で積層された構造を有する積層体と、
前記積層体上に配置された層間絶縁膜と、
前記積層体の少なくとも一部及び前記層間絶縁膜を介して前記駆動装置領域の上方に配置され、前記積層体での発光を制御する制御トランジスタと、
前記層間絶縁膜内で前記制御トランジスタと前記積層体との間に配置された遮光膜と
を備えることを特徴とする半導体発光装置。 - 前記制御トランジスタの前記積層体と対向する側面及び底面に前記遮光膜が配置されていることを特徴とする請求項1に記載の半導体発光装置。
- 前記積層体の前記発光領域上における膜厚が、前記駆動装置領域上における膜厚よりも厚いことを特徴とする請求項1又は2に記載の半導体発光装置。
- 前記駆動装置領域から前記発光領域に向かって前記積層体の膜厚が徐々に厚くなっていることを特徴とする請求項3に記載の半導体発光装置。
- 前記制御トランジスタが、前記主面と平行な方向にp型領域とn型領域が隣接する構造を有することを特徴とする請求項1乃至4のいずれか1項に記載の半導体発光装置。
- 前記制御トランジスタが接合型電界効果トランジスタであることを特徴とする請求項5に記載の半導体発光装置。
- 前記層間絶縁膜上に配置され、前記層間絶縁膜に設けられた開口部で前記制御トランジスタのソース電極と前記p型半導体層とに接続する配線層を更に備えることを特徴とする請求項6に記載の半導体発光装置。
- 前記発光領域上方で前記積層体と前記層間絶縁膜間に配置され、前記p型半導体層と接する透明電極を更に備えることを特徴とする請求項1乃至7のいずれか1項に記載の半導体発光装置。
Priority Applications (4)
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JP2012224681A JP5935643B2 (ja) | 2012-10-10 | 2012-10-10 | 半導体発光装置 |
KR20130114286A KR101493377B1 (ko) | 2012-10-10 | 2013-09-26 | 반도체 발광장치 |
CN201310464248.9A CN103730478B (zh) | 2012-10-10 | 2013-10-08 | 半导体发光装置 |
TW102136497A TWI542043B (zh) | 2012-10-10 | 2013-10-09 | Semiconductor light emitting device |
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JP2012224681A JP5935643B2 (ja) | 2012-10-10 | 2012-10-10 | 半導体発光装置 |
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JP2014078575A true JP2014078575A (ja) | 2014-05-01 |
JP5935643B2 JP5935643B2 (ja) | 2016-06-15 |
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JP (1) | JP5935643B2 (ja) |
KR (1) | KR101493377B1 (ja) |
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TW (1) | TWI542043B (ja) |
Cited By (11)
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JP2016154213A (ja) * | 2015-02-16 | 2016-08-25 | 株式会社東芝 | 半導体発光装置 |
WO2017171337A1 (ko) * | 2016-03-30 | 2017-10-05 | 엘지이노텍 주식회사 | 반도체 소자 |
KR20170111930A (ko) * | 2016-03-30 | 2017-10-12 | 엘지이노텍 주식회사 | 반도체 소자, 이를 포함하는 표시패널, 표시장치, 통신장치 |
US10711958B2 (en) | 2018-05-09 | 2020-07-14 | Samsung Electronics Co., Ltd. | LED device and LED lamp using the same |
WO2022059527A1 (ja) * | 2020-09-17 | 2022-03-24 | 日亜化学工業株式会社 | 画像表示装置の製造方法および画像表示装置 |
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WO2022113950A1 (ja) * | 2020-11-25 | 2022-06-02 | 日亜化学工業株式会社 | 画像表示装置の製造方法および画像表示装置 |
WO2022210402A1 (ja) * | 2021-03-31 | 2022-10-06 | 株式会社ジャパンディスプレイ | 表示装置 |
WO2022209748A1 (ja) * | 2021-03-29 | 2022-10-06 | 日亜化学工業株式会社 | 画像表示装置の製造方法および画像表示装置 |
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2012
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- 2013-09-26 KR KR20130114286A patent/KR101493377B1/ko not_active IP Right Cessation
- 2013-10-08 CN CN201310464248.9A patent/CN103730478B/zh active Active
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Cited By (16)
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JP2016154213A (ja) * | 2015-02-16 | 2016-08-25 | 株式会社東芝 | 半導体発光装置 |
KR102520536B1 (ko) | 2016-03-30 | 2023-04-12 | 엘지이노텍 주식회사 | 반도체 소자, 이를 포함하는 표시패널, 표시장치, 통신장치 |
KR20230050306A (ko) * | 2016-03-30 | 2023-04-14 | 엘지이노텍 주식회사 | 반도체 소자, 이를 포함하는 표시패널, 표시장치, 통신장치 |
CN109314155A (zh) * | 2016-03-30 | 2019-02-05 | Lg伊诺特有限公司 | 半导体器件 |
US10600936B2 (en) | 2016-03-30 | 2020-03-24 | Lg Innotek Co., Ltd. | Semiconductor device |
KR20170111930A (ko) * | 2016-03-30 | 2017-10-12 | 엘지이노텍 주식회사 | 반도체 소자, 이를 포함하는 표시패널, 표시장치, 통신장치 |
KR102665368B1 (ko) | 2016-03-30 | 2024-05-13 | 엘지이노텍 주식회사 | 반도체 소자, 이를 포함하는 표시패널, 표시장치, 통신장치 |
WO2017171337A1 (ko) * | 2016-03-30 | 2017-10-05 | 엘지이노텍 주식회사 | 반도체 소자 |
US10711958B2 (en) | 2018-05-09 | 2020-07-14 | Samsung Electronics Co., Ltd. | LED device and LED lamp using the same |
WO2022059527A1 (ja) * | 2020-09-17 | 2022-03-24 | 日亜化学工業株式会社 | 画像表示装置の製造方法および画像表示装置 |
WO2022113949A1 (ja) * | 2020-11-25 | 2022-06-02 | 日亜化学工業株式会社 | 画像表示装置の製造方法および画像表示装置 |
WO2022113950A1 (ja) * | 2020-11-25 | 2022-06-02 | 日亜化学工業株式会社 | 画像表示装置の製造方法および画像表示装置 |
WO2022209748A1 (ja) * | 2021-03-29 | 2022-10-06 | 日亜化学工業株式会社 | 画像表示装置の製造方法および画像表示装置 |
WO2022209823A1 (ja) * | 2021-03-30 | 2022-10-06 | 日亜化学工業株式会社 | 画像表示装置の製造方法および画像表示装置 |
WO2022210402A1 (ja) * | 2021-03-31 | 2022-10-06 | 株式会社ジャパンディスプレイ | 表示装置 |
JP7508697B2 (ja) | 2021-03-31 | 2024-07-01 | 株式会社ジャパンディスプレイ | 表示装置 |
Also Published As
Publication number | Publication date |
---|---|
CN103730478B (zh) | 2016-05-04 |
KR101493377B1 (ko) | 2015-02-13 |
TW201429004A (zh) | 2014-07-16 |
CN103730478A (zh) | 2014-04-16 |
KR20140046372A (ko) | 2014-04-18 |
JP5935643B2 (ja) | 2016-06-15 |
TWI542043B (zh) | 2016-07-11 |
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