JP2014060170A - 高効率有機発光素子およびその製造方法 - Google Patents
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
- H10K59/173—Passive-matrix OLED displays comprising banks or shadow masks
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
【解決手段】本発明は有機発光素子から発生した光を外部に最大限抽出することができる構造を有する有機発光素子に関し、より詳しくは、光再活用パターンを含む高屈折率層または電極を含むことを特徴とする。
【選択図】図3
Description
2 第1電極
3 有機物層
4 第2電極
5 高屈折率層
6,7 光再活用パターン
Claims (22)
- 基板;前記基板上に位置した第1電極;前記第1電極上に位置した発光層を含む1階以上の有機物層;および前記有機物層上に位置した第2電極を含む有機発光素子であって、前記第1電極の下部および前記第2電極の上部のうちの少なくとも一側に備えられた高屈折率層を含み、前記高屈折率層は光再活用パターンを含むことを特徴とする、有機発光素子。
- 前記基板および前記第1電極が光透過性を有し、前記基板と前記第1電極の間に高屈折率層が備えられ、前記高屈折率層は光再活用パターンを含む、請求項1に記載の有機発光素子。
- 前記第2電極が光透過性を有し、前記第2電極の有機物層方向と反対方向の面に高屈折率層が備えられ、前記高屈折率層は光再活用パターンを含む、請求項1に記載の有機発光素子。
- 前記光再活用パターンは散乱性パターンを含む、請求項1〜3のうちのいずれか一項に記載の有機発光素子。
- 前記光再活用パターンは光の吸収および再発光パターンを含む、請求項1〜3のうちのいずれか一項に記載の有機発光素子。
- 前記有機発光素子は散乱性パターンをさらに含む、請求項5に記載の有機発光素子。
- 前記光再活用パターンは低屈折率パターンを含む、請求項1〜3のうちのいずれか一項に記載の有機発光素子。
- 前記低屈折率パターンの屈折率は1.6以下である、請求項7に記載の有機発光素子。
- 前記光再活用パターンは反射性パターンを含む、請求項1〜3のうちのいずれか一項に記載の有機発光素子。
- 前記光再活用パターンは、前記高屈折率層と基板の界面から前記高屈折率層と第1電極の界面まで延長した構造;前記高屈折率層と基板の界面から前記高屈折率層の中間部まで延長した構造;前記高屈折率層と基板の界面から前記第1電極内部まで延長した構造;または前記高屈折率層と基板の界面から前記有機物層の内部まで延長した構造である、請求項2に記載の有機発光素子。
- 前記光再活用パターンと前記高屈折率層の界面は前記基板に対して垂直であるか傾斜角を有する、請求項1〜3のうちのいずれか一項に記載の有機発光素子。
- 前記光再活用パターンの厚さは前記高屈折率層の厚さの20%〜90%である、請求項1〜3のうちのいずれか一項に記載の有機発光素子。
- 前記光再活用パターンのパターン化された面積は全体面積の5%〜90%である、請求項1〜3のうちのいずれか一項に記載の有機発光素子。
- 前記高屈折率層の屈折率は1.6以上である、請求項1〜3のうちのいずれか一項に記載の有機発光素子。
- 前記高屈折率層の屈折率は1.65〜1.9である、請求項14に記載の有機発光素子。
- 前記高屈折率層の光透過率は80%以上である、請求項1〜3のうちのいずれか一項に記載の有機発光素子。
- 前記光再活用パターンを含む層の厚さaと前記光再活用パターンによって分割される高屈折率層の幅cの比であるa:cは0.01以上である、請求項1〜3のうちのいずれか一項に記載の有機発光素子。
- 前記光再活用パターンの幅bと前記光再活用パターンによって分割される高屈折率層の幅cの比であるb/cは2よりも小さい、請求項1〜3のうちのいずれか一項に記載の有機発光素子。
- 前記光再活用パターンと前記高屈折率層の界面に備えられた反射性物質を含む層を含む、請求項1〜3のうちのいずれか一項に記載の有機発光素子。
- 前記第1電極と有機物層の間または前記光再活用パターンと有機物層の間に位置すると同時に前記第1電極と接する伝導性層がさらに備えられる、請求項1〜3のうちのいずれか一項に記載の有機発光素子。
- 前記有機発光素子の第2電極の外側または基板の外側に蛍光性または燐光性物質を含む層をさらに含む、請求項1〜3のうちのいずれか一項に記載の有機発光素子。
- 基板;前記基板上に位置した第1電極;前記第1電極上に位置した発光層を含む1階以上の有機物層;および前記有機物層上に位置した第2電極を含む有機発光素子であって、前記第1電極および前記第2電極のうちの少なくとも1つは光再活用パターンを含み、前記光再活用パターンを含む電極は光透過性であることを特徴とする、有機発光素子。
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KR10-2008-0093993 | 2008-09-25 | ||
KR20080093993 | 2008-09-25 |
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Country | Link |
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US (1) | US9722209B2 (ja) |
EP (1) | EP2334149B1 (ja) |
JP (2) | JP5726739B2 (ja) |
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US20110180836A1 (en) | 2011-07-28 |
EP2334149B1 (en) | 2015-06-03 |
KR20120001712A (ko) | 2012-01-04 |
CN102165845A (zh) | 2011-08-24 |
EP2334149A4 (en) | 2012-07-11 |
WO2010036070A2 (ko) | 2010-04-01 |
KR20100035134A (ko) | 2010-04-02 |
US9722209B2 (en) | 2017-08-01 |
KR101530748B1 (ko) | 2015-06-24 |
KR20100035133A (ko) | 2010-04-02 |
JP2012503300A (ja) | 2012-02-02 |
WO2010036070A3 (ko) | 2010-07-08 |
JP5726739B2 (ja) | 2015-06-03 |
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