JP2014007281A - レジストマスクの処理方法 - Google Patents
レジストマスクの処理方法 Download PDFInfo
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- JP2014007281A JP2014007281A JP2012141961A JP2012141961A JP2014007281A JP 2014007281 A JP2014007281 A JP 2014007281A JP 2012141961 A JP2012141961 A JP 2012141961A JP 2012141961 A JP2012141961 A JP 2012141961A JP 2014007281 A JP2014007281 A JP 2014007281A
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- 238000012545 processing Methods 0.000 title claims abstract description 110
- 238000000034 method Methods 0.000 title claims abstract description 46
- 239000007789 gas Substances 0.000 claims abstract description 123
- 239000000758 substrate Substances 0.000 claims abstract description 28
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000001257 hydrogen Substances 0.000 claims abstract description 22
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 22
- 229910052731 fluorine Inorganic materials 0.000 claims description 19
- 239000011737 fluorine Substances 0.000 claims description 19
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 15
- 239000000470 constituent Substances 0.000 claims description 11
- 238000005530 etching Methods 0.000 abstract description 17
- 230000008569 process Effects 0.000 description 20
- 230000002093 peripheral effect Effects 0.000 description 13
- 239000004020 conductor Substances 0.000 description 9
- 238000003672 processing method Methods 0.000 description 9
- 238000009616 inductively coupled plasma Methods 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 239000003507 refrigerant Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- -1 fluorine ions Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
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- H01L21/02107—Forming insulating materials on a substrate
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- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
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- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
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- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
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Abstract
【解決手段】レジストマスクを処理する方法を提供する。この方法は、(a)処理容器内において、パターニングされたレジストマスクがその上に設けられた被処理基体を準備する工程S1と、(b)処理容器内に水素を含有するガスを供給し、当該処理容器内にマイクロ波を供給して、該水素を含有するガスのプラズマを生成する工程S3と、を含む。水素を含有するガスは、例えば、H2ガスであってもよい。
【選択図】図1
Description
式(1)において、μeffは有効質量、Coxはゲート容量、Wはチャネル幅、Lはチャネル長、Vgはゲート電圧、Vtはスレッショルド電圧、Vdtはソース−ドレイン間電圧である。
<被処理基体W>
・被エッチング層EL : 多結晶シリコン層(60nm厚)
・第1層ML1: SiO2層(8nm厚)、SiN層(40nm厚)、SiO2層(21nm厚)の3層構造
・第2層ML2: SOH層(120nm厚)
・第3層ML3: SiON層(23nm厚)
<工程S2の処理条件>
・処理ガス:CH3Fガス(流量58sccm)
・処理容器内圧力:50mT(6.6Pa)
・マイクロ波のパワー:2500W
・RFバイアス電力のパワー:300W
・RFバイアス電力の周波数:13.56MHz
・中央導入部流量:周辺導入部の流量=5:95
<工程S3の処理条件>
・処理ガス:Arガス(流量200sccm)、H2ガス(流量200sccm)
・処理容器内圧力:100mT(13.3Pa)
・マイクロ波のパワー:3000W
・RFバイアス電力のパワー:0W
・RFバイアス電力の周波数:13.56MHz
・中央導入部流量:周辺導入部の流量=5:95
<工程S4の処理条件>
(1)第3層ML3の処理条件
・処理ガス:CF4ガス(流量150sccm)、CH3Fガス(流量170sccm)
・処理容器内圧力:80mT(10.6Pa)
・マイクロ波のパワー:2000W
・RFバイアス電力のパワー:300W
・RFバイアス電力の周波数:13.56MHz
・中央導入部流量:周辺導入部の流量=5:95
(2)第2層ML2の処理条件
・処理ガス:Arガス(流量1000sccm)、HBrガス(流量450sccm)、O2ガス(流量60sccm)
・処理容器内圧力:100mT(13.3Pa)
・マイクロ波のパワー:2500W
・RFバイアス電力のパワー:150W
・RFバイアス電力の周波数:13.56MHz
・中央導入部流量:周辺導入部の流量=5:95
(3)第1層ML1の処理条件
・処理ガス:CF4ガス(流量190sccm)、CH3Fガス(流量170sccm)
・処理容器内圧力:80mT(10.6Pa)
・マイクロ波のパワー:2500W
・RFバイアス電力のパワー:300W
・RFバイアス電力の周波数:13.56MHz
・中央導入部流量:周辺導入部の流量=5:95
Claims (6)
- レジストマスクを処理する方法であって、
処理容器内において、パターニングされたレジストマスクがその上に設けられた被処理基体を準備する工程と、
前記処理容器内に水素を含有するガスを供給し、該処理容器内にマイクロ波を供給して、該水素を含有するガスのプラズマを生成する工程と、
を含む方法。 - 前記水素を含有するガスのプラズマを生成する前記工程の前に、前記被処理基体を収容した前記処理容器内にフッ素を含有するガスを供給し、該処理容器内にマイクロ波を供給して、フッ素を含有するガスのプラズマを生成する工程を更に含む、請求項1に記載の方法。
- 前記フッ素を含有するガスは、CH3Fガスである、請求項2に記載の方法。
- 前記フッ素を含有するガスのプラズマを生成する前記工程は、前記レジストマスクのラインの長手方向における縮みを抑制する、請求項2又は3に記載の方法。
- 前記水素を含有するガスは、H2ガスである、請求項1〜4の何れか一項に記載の方法。
- 前記マイクロ波によって励起される前記水素を含有するガスの前記プラズマは、前記レジストマスクの構成材料の主鎖におけるC−C結合の切断を抑制するよう、前記レジストマスクの構成材料の側鎖を切断する、請求項1〜5の何れか一項に記載の方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP2012141961A JP6008608B2 (ja) | 2012-06-25 | 2012-06-25 | レジストマスクの処理方法 |
PCT/JP2013/066561 WO2014002808A1 (ja) | 2012-06-25 | 2013-06-17 | レジストマスクの処理方法 |
KR1020147033022A KR101808380B1 (ko) | 2012-06-25 | 2013-06-17 | 레지스트 마스크의 처리 방법 및 반도체 디바이스의 제조 방법 |
US14/403,794 US9337020B2 (en) | 2012-06-25 | 2013-06-17 | Resist mask processing method using hydrogen containing plasma |
TW102121785A TWI594087B (zh) | 2012-06-25 | 2013-06-19 | 光阻遮罩之處理方法及半導體裝置製造方法 |
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JP2012141961A JP6008608B2 (ja) | 2012-06-25 | 2012-06-25 | レジストマスクの処理方法 |
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JP2014007281A true JP2014007281A (ja) | 2014-01-16 |
JP6008608B2 JP6008608B2 (ja) | 2016-10-19 |
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US (1) | US9337020B2 (ja) |
JP (1) | JP6008608B2 (ja) |
KR (1) | KR101808380B1 (ja) |
TW (1) | TWI594087B (ja) |
WO (1) | WO2014002808A1 (ja) |
Cited By (2)
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JP2018200931A (ja) * | 2017-05-26 | 2018-12-20 | 大日本印刷株式会社 | パターン形成方法、凹凸構造体の製造方法、レプリカモールドの製造方法、レジストパターン改質装置及びパターン形成システム |
KR20190024790A (ko) | 2017-08-30 | 2019-03-08 | 도쿄엘렉트론가부시키가이샤 | 에칭 방법 및 에칭 장치 |
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US9748110B2 (en) * | 2015-09-03 | 2017-08-29 | Tokyo Electron Limited | Method and system for selective spacer etch for multi-patterning schemes |
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KR102455267B1 (ko) | 2017-04-21 | 2022-10-17 | 후지필름 가부시키가이샤 | Euv광용 감광성 조성물, 패턴 형성 방법, 전자 디바이스의 제조 방법 |
FR3066498A1 (fr) * | 2017-05-22 | 2018-11-23 | Arkema France | Procede pour l'assemblage de copolymeres a blocs par controle de l'energie de surface d'un materiau par traitement reducteur plasma |
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EP3731016A4 (en) | 2017-12-22 | 2021-02-24 | FUJIFILM Corporation | COMPOSITION OF RESIN SENSITIVE TO ACTIVE LIGHT OR SENSITIVE TO RADIATION, RESERVE FILM, PATTERN FORMATION PROCESS, MASK FORMING INCLUDING RESERVE FILM, PHOTOMASK MANUFACTURING PROCESS AND ELECTRONIC DEVICE MANUFACTURING METHOD |
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US20240242970A1 (en) * | 2023-01-12 | 2024-07-18 | Applied Materials, Inc. | Photolithography enhancement techniques |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008198988A (ja) * | 2007-01-16 | 2008-08-28 | Hitachi High-Technologies Corp | プラズマ処理方法 |
JP2009164626A (ja) * | 2002-06-27 | 2009-07-23 | Tokyo Electron Ltd | プラズマ処理方法 |
JP2010041028A (ja) * | 2008-07-11 | 2010-02-18 | Tokyo Electron Ltd | 基板処理方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4654680A (en) * | 1980-09-24 | 1987-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Sidewall gate IGFET |
US5204210A (en) * | 1990-12-07 | 1993-04-20 | Xerox Corporation | Method for the direct patterning of diamond films |
US7473377B2 (en) * | 2002-06-27 | 2009-01-06 | Tokyo Electron Limited | Plasma processing method |
JP2005260060A (ja) * | 2004-03-12 | 2005-09-22 | Semiconductor Leading Edge Technologies Inc | レジスト除去装置及びレジスト除去方法、並びにそれを用いて製造した半導体装置 |
JP5362176B2 (ja) * | 2006-06-12 | 2013-12-11 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US20130267097A1 (en) * | 2012-04-05 | 2013-10-10 | Lam Research Corporation | Method and apparatus for forming features with plasma pre-etch treatment on photoresist |
-
2012
- 2012-06-25 JP JP2012141961A patent/JP6008608B2/ja not_active Expired - Fee Related
-
2013
- 2013-06-17 US US14/403,794 patent/US9337020B2/en active Active
- 2013-06-17 WO PCT/JP2013/066561 patent/WO2014002808A1/ja active Application Filing
- 2013-06-17 KR KR1020147033022A patent/KR101808380B1/ko active IP Right Grant
- 2013-06-19 TW TW102121785A patent/TWI594087B/zh not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009164626A (ja) * | 2002-06-27 | 2009-07-23 | Tokyo Electron Ltd | プラズマ処理方法 |
JP2008198988A (ja) * | 2007-01-16 | 2008-08-28 | Hitachi High-Technologies Corp | プラズマ処理方法 |
JP2010041028A (ja) * | 2008-07-11 | 2010-02-18 | Tokyo Electron Ltd | 基板処理方法 |
Non-Patent Citations (1)
Title |
---|
JPN7013003153; Myeong-Cheol Kim, 外5名: 'Effects of various plasma pretreatments on 193 nm photoresist and linewidth roughness after etching' Journal of Vacuum Science & Technology B Vol. 24, No. 6, 20061103, pp.2645-2652 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018200931A (ja) * | 2017-05-26 | 2018-12-20 | 大日本印刷株式会社 | パターン形成方法、凹凸構造体の製造方法、レプリカモールドの製造方法、レジストパターン改質装置及びパターン形成システム |
JP7039865B2 (ja) | 2017-05-26 | 2022-03-23 | 大日本印刷株式会社 | パターン形成方法、凹凸構造体の製造方法、レプリカモールドの製造方法、レジストパターン改質装置及びパターン形成システム |
KR20190024790A (ko) | 2017-08-30 | 2019-03-08 | 도쿄엘렉트론가부시키가이샤 | 에칭 방법 및 에칭 장치 |
US10672622B2 (en) | 2017-08-30 | 2020-06-02 | Tokyo Electron Limited | Etching method and etching apparatus |
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TWI594087B (zh) | 2017-08-01 |
US9337020B2 (en) | 2016-05-10 |
KR20150023288A (ko) | 2015-03-05 |
JP6008608B2 (ja) | 2016-10-19 |
WO2014002808A1 (ja) | 2014-01-03 |
US20150104957A1 (en) | 2015-04-16 |
TW201413401A (zh) | 2014-04-01 |
KR101808380B1 (ko) | 2017-12-12 |
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