JP2005260060A - レジスト除去装置及びレジスト除去方法、並びにそれを用いて製造した半導体装置 - Google Patents
レジスト除去装置及びレジスト除去方法、並びにそれを用いて製造した半導体装置 Download PDFInfo
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910008284 Si—F Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3342—Resist stripping
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
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- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
【解決手段】 チャンバ21内の回転テーブル22上にウエハ31を載置し、ガス導入口32より水素混合ガスを放電管25に導入し、μ波27を導波管28を通して放電管25内に供給し上記混合ガスをプラズマ励起させ水素活性種を生成する。そして水素原子あるいは水素分子の中性ラジカル(水素ラジカル)をガス輸送管23からチャンバ21内に導入させウエハ31表面のレジストマスクを除去する。ここで、回転テーブル22を加熱し温度制御する基板加熱系34によりウエハ31の温度を200℃〜400℃の範囲に設定しておく。このレジスト除去後の処理ガスはガス排出口33から排気系30によりチャンバ21外に排出する。
【選択図】 図2
Description
(実施の形態1)
図1は、本発明の第1の実施の形態にかかるレジスト除去方法を適用した半導体装置の製造を示す工程別素子断面図である。図2は、上記レジスト除去において用いるレジスト除去装置の模式的な略断面図である。
図4,5は、本発明の第2の実施の形態にかかるレジスト除去方法を適用した半導体装置の製造を示す工程別素子断面図である。そして、図6は、上記レジスト除去において用いる別のレジスト除去装置の模式的な略断面図である。
2 拡散層
3 シリコン酸化膜
4 MSQ膜
5,50 レジストマスク
6,51 レジスト開口部
7,53 ヴィアホール
8,54 水素ラジカル
9 層間絶縁膜
10 ヴィアプラグ
11 配線
20,60 レジスト除去装置
21,61 チャンバ
22,62 回転テーブル
23 ガス輸送管
24,63 プラズマ発生部
25 放電管
26 耐プラズマ部材
27 μ波
28 導波管
29,65 ガス供給系
30,66 排気系
31,67 ウエハ
32,68 ガス導入口
33,69 ガス排出口
34,70 基板加熱系
41 下層絶縁膜
42 第1バリア層
43 下層配線
44 第2バリア層
45 第1MSQ膜
46 第1保護絶縁膜
47 開口部
48 第2MSQ膜
49 第2保護絶縁膜
52 配線溝
55 第3バリア層
56 Cu膜
57 デュアルダマシン配線
Claims (9)
- 水素ガスを含む原料ガスのプラズマ励起により生成する水素活性種を用い被処理基板上のレジスト膜をエッチング処理するレジスト除去装置において、
前記水素ガスのプラズマ発生部と、
前記プラズマ発生部で発生した水素プラズマが前記被処理基板を照射しないように引き離して設けた処理室と、
前記プラズマ発生部で生成した水素活性種を前記処理室に輸送する活性種輸送管と、
を備えたことを特徴とするレジスト除去装置。 - 水素ガスを含む原料ガスのプラズマ励起により生成する水素活性種を用い被処理基板上のレジスト膜をエッチング処理するレジスト除去装置において、
前記水素ガスのプラズマ発生部と、
前記プラズマ発生部と一体構造に設けた前記被処理基板を載置する処理室と、
前記プラズマ発生部と前記被処理基板との間に前記プラズマ発生部で発生した水素プラズマを遮蔽するように挿着した遮蔽板と、
を備えたことを特徴とするレジスト除去装置。 - 前記プラズマ発生部のプラズマ励起室の内壁にサファイアにより耐プラズマ部材が設けられていることを特徴とする請求項1または請求項2に記載のレジスト除去装置。
- 前記プラズマ励起は、マイクロ波、ヘリコン波あるいは高周波を用いて行うようになっていることを特徴とする請求項1、請求項2または請求項3に記載のレジスト除去装置。
- 請求項1乃至4のいずれか一項に記載のレジスト除去装置を用いたレジスト除去方法であって、前記原料ガスとして水素ガスと不活性ガスの混合ガスを用いて前記被処理基板上に形成したレジスト膜をエッチング除去することを特徴とするレジスト除去方法。
- 前記被処理基板の温度を200℃〜400℃の範囲に設定して前記被処理基板上に形成したレジスト膜をエッチング除去することを特徴とする請求項5に記載のレジスト除去方法。
- 前記レジスト膜は前記被処理基板上に形成した比誘電率が3以下の低誘電率の絶縁膜の加工に用いたレジストマスクであることを特徴とする請求項5または請求項6に記載のレジスト除去方法。
- 請求項7に記載のレジスト除去方法を用いて製造した半導体装置であって、前記低誘電率の絶縁膜が半導体素子間を接続する多層配線構造の層間絶縁膜となっていることを特徴とする半導体装置。
- 請求項7に記載のレジスト除去方法を用いて製造した半導体装置であって、前記低誘電率の絶縁膜が半導体素子間を接続するダマシン配線構造の層間絶縁膜となっていることを特徴とする半導体装置。
Priority Applications (3)
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JP2004070852A JP2005260060A (ja) | 2004-03-12 | 2004-03-12 | レジスト除去装置及びレジスト除去方法、並びにそれを用いて製造した半導体装置 |
TW093136963A TW200531168A (en) | 2004-03-12 | 2004-11-30 | Resist removal method and semiconductor device manufactured by using the same |
US11/052,911 US20050199586A1 (en) | 2004-03-12 | 2005-02-09 | Resist removal method and semiconductor device manufactured by using the same |
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JP2004070852A JP2005260060A (ja) | 2004-03-12 | 2004-03-12 | レジスト除去装置及びレジスト除去方法、並びにそれを用いて製造した半導体装置 |
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US (1) | US20050199586A1 (ja) |
JP (1) | JP2005260060A (ja) |
TW (1) | TW200531168A (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006270004A (ja) * | 2005-03-25 | 2006-10-05 | Osaka Univ | レジスト膜の除去方法および除去装置 |
KR100815939B1 (ko) | 2006-11-01 | 2008-03-21 | 동부일렉트로닉스 주식회사 | 포토레지스트 패턴에 대한 리워크 방법 |
JP2009526399A (ja) * | 2006-02-10 | 2009-07-16 | アプライド マテリアルズ インコーポレイテッド | プラズマに面する壁の水蒸気不動態化 |
JP2010505265A (ja) * | 2006-09-28 | 2010-02-18 | ラム リサーチ コーポレーション | フォトレジスト剥離および金属エッチング後パッシベーション用の高チャンバ温度プロセスおよびチャンバ設計 |
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US7704888B2 (en) * | 2007-01-23 | 2010-04-27 | Globalfoundries Inc. | Methods for removing photoresist from semiconductor structures having high-k dielectric material layers |
JP2009104916A (ja) * | 2007-10-24 | 2009-05-14 | Canon Inc | 電子放出素子、電子源、画像表示装置および電子放出素子の製造方法 |
US20090258487A1 (en) * | 2008-04-14 | 2009-10-15 | Keng-Chu Lin | Method for Improving the Reliability of Low-k Dielectric Materials |
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JP6008608B2 (ja) * | 2012-06-25 | 2016-10-19 | 東京エレクトロン株式会社 | レジストマスクの処理方法 |
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JP2003092287A (ja) * | 2001-09-19 | 2003-03-28 | Nec Corp | アッシング方法 |
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JP2005538566A (ja) * | 2002-09-10 | 2005-12-15 | アクセリス テクノロジーズ, インコーポレイテッド | 温度固定されたチャックを用いた温度可変プロセスにおける基板の加熱方法 |
US20040237997A1 (en) * | 2003-05-27 | 2004-12-02 | Applied Materials, Inc. ; | Method for removal of residue from a substrate |
US20050045206A1 (en) * | 2003-08-26 | 2005-03-03 | Smith Patricia Beauregard | Post-etch clean process for porous low dielectric constant materials |
JP2005268312A (ja) * | 2004-03-16 | 2005-09-29 | Semiconductor Leading Edge Technologies Inc | レジスト除去方法及びそれを用いて製造した半導体装置 |
US7029992B2 (en) * | 2004-08-17 | 2006-04-18 | Taiwan Semiconductor Manufacturing Company | Low oxygen content photoresist stripping process for low dielectric constant materials |
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2004
- 2004-03-12 JP JP2004070852A patent/JP2005260060A/ja active Pending
- 2004-11-30 TW TW093136963A patent/TW200531168A/zh unknown
-
2005
- 2005-02-09 US US11/052,911 patent/US20050199586A1/en not_active Abandoned
Cited By (5)
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JP2006270004A (ja) * | 2005-03-25 | 2006-10-05 | Osaka Univ | レジスト膜の除去方法および除去装置 |
JP2009526399A (ja) * | 2006-02-10 | 2009-07-16 | アプライド マテリアルズ インコーポレイテッド | プラズマに面する壁の水蒸気不動態化 |
KR101364440B1 (ko) * | 2006-02-10 | 2014-02-17 | 어플라이드 머티어리얼스, 인코포레이티드 | 플라즈마를 향한 벽의 수증기 패시베이션 |
JP2010505265A (ja) * | 2006-09-28 | 2010-02-18 | ラム リサーチ コーポレーション | フォトレジスト剥離および金属エッチング後パッシベーション用の高チャンバ温度プロセスおよびチャンバ設計 |
KR100815939B1 (ko) | 2006-11-01 | 2008-03-21 | 동부일렉트로닉스 주식회사 | 포토레지스트 패턴에 대한 리워크 방법 |
Also Published As
Publication number | Publication date |
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TW200531168A (en) | 2005-09-16 |
US20050199586A1 (en) | 2005-09-15 |
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